TWI633683B - Light-emitting element having a plurality of light-emitting structures - Google Patents

Abstract

a light emitting device comprising: a first semiconductor layer; a first light emitting structure, a second light emitting structure, and a third light emitting structure over the first semiconductor layer, wherein the first semiconductor layer is continuous; a trench between the first light emitting structure and the second light emitting structure, exposing an upper surface of the first semiconductor layer; a second trench between the second light emitting structure and the third light emitting structure, exposing the first semiconductor layer a third trench, in one of the light emitting structures, exposing the first semiconductor layer, wherein the third trench extends along a first extending direction, the first extending direction is parallel to the first semiconductor layer An insulating bridge portion is disposed in the first trench and the second trench to connect the light emitting structures; a first electrode is disposed in the third trench and electrically connected to the first semiconductor layer; and a second electrode is A second wire bonding portion is disposed on one of the light emitting structures, and a second extending portion extends from the second wire bonding portion; wherein the second extending portion is located on the insulating bridge portion and extends to the light emitting structures.

Description

Light-emitting element having a plurality of light-emitting structures

The present invention relates to a light-emitting element, and more particularly to a light-emitting element having a plurality of light-emitting structures.

As shown in FIG. 1A, a photovoltaic element, such as a light-emitting diode (LED), has been widely used in optical display devices, traffic signs, data storage devices, communication devices, lighting devices, and medical devices. On the equipment. Further, the LED 1 described above may be combined with other components to form a light-emitting device. FIG. 1B is a schematic view showing the structure of a conventional light-emitting device. As shown in FIG. 1B, a light-emitting device 10 includes a submount 12 having a circuit 120; a solder 14 is located on the sub-carrier 12, The solder 14 thus fixes the LED 1 to the sub-carrier 12 and electrically connects the LED 1 to the circuit 120 on the sub-carrier 12; and an electrical connection structure 16 for electrically connecting the electrode 11/13 of the LED 1 with the sub-carrier The circuit 120 of 12; wherein the secondary carrier 12 can be a lead frame or a large mounting substrate.

a light emitting device comprising: a first semiconductor layer; a first light emitting structure, a second light emitting structure, and a third light emitting structure over the first semiconductor layer, wherein the first semiconductor layer is continuous; a trench between the first light emitting structure and the second light emitting structure, exposed An upper surface of the first semiconductor layer; a second trench between the second light emitting structure and the third light emitting structure, exposing the upper surface of the first semiconductor layer; and a third trench located in one of the light emitting structures The first semiconductor layer is exposed, wherein the third trench extends along a first extending direction, the first extending direction is parallel to the first semiconductor layer; and the insulating bridge is located in the first trench and the second trench Connecting a light emitting structure; a first electrode is disposed in the third trench and electrically connected to the first semiconductor layer; and a second electrode includes a second wire portion disposed on one of the light emitting structures, And a second extending portion extending from the second wire-bonding portion; wherein the second extending portion is located on the insulating bridge portion and extends to the light-emitting structures.

1‧‧‧LED

10‧‧‧Lighting device

11, 13‧‧‧ electrodes

12‧‧‧ times carrier

120‧‧‧ Circuitry

14‧‧‧ solder

16‧‧‧Electrical connection structure

2, 2', 3, 3', 4, 4', 5, 5', 6‧‧ ‧ light-emitting elements

20‧‧‧Substrate

200‧‧‧ patterned upper surface

21‧‧‧First electrode

21A‧‧‧The first line department

21B‧‧‧First Extension

22‧‧‧Lighting laminate

220‧‧‧First semiconductor layer

221‧‧‧ first upper surface

222‧‧‧ active layer

223‧‧‧ first side

224‧‧‧Second semiconductor layer

225‧‧‧ second side

23‧‧‧second electrode

23A‧‧‧Second Line Department

23B‧‧‧Second extension

24‧‧‧Transparent conductive layer

25, 41, 50, 60‧‧‧ first trench

27, 43, 62‧‧‧ second trench

30, 40, 54‧‧‧ first bridge

31, 45, 52‧‧‧ third trench

32‧‧‧Electrical insulation

33‧‧‧fourth trench

42‧‧‧Second Bridge

431‧‧‧First District

432‧‧‧Second District

451‧‧‧ Third District

452‧‧‧Fourth District

47, 64‧‧‧ Exposure

51‧‧‧First cable

53‧‧‧second cable

7‧‧‧Light bulb

71‧‧‧shade

72‧‧‧ lens

73‧‧‧ Carrier

74‧‧‧Lighting module

75‧‧‧ lamp holder

76‧‧‧heat sink

77‧‧‧Connecting Department

78‧‧‧Electrical connector

[Fig. 1A] is a schematic top view of a conventional LED. .

[Fig. 1B] is a schematic view showing the structure of a conventional light-emitting device.

[Fig. 2A] is a top plan view of a light-emitting element according to an embodiment of the present application.

[Fig. 2B] is a schematic cross-sectional view showing the light-emitting element shown in Fig. 2A.

[2C to 2D] is a flow chart showing the manufacture of a light-emitting element according to another embodiment of the present application.

[Fig. 2E] shows the efficiency of the light-emitting element of the embodiment of the present application and the conventional LED.

[Fig. 3A] is a top plan view showing a light-emitting element of another embodiment of the present application.

[Fig. 3B] is a top plan view showing a light-emitting element of another embodiment of the present application.

[Fig. 4A] is a top plan view showing a light-emitting element of another embodiment of the present application.

[Fig. 4B] is a top plan view showing a light-emitting element of another embodiment of the present application.

[Fig. 4C] is a top plan view showing a light-emitting element of another embodiment of the present application.

[Fig. 5A] is a top plan view showing a light-emitting element of another embodiment of the present application.

[Fig. 5B] is a top plan view showing a light-emitting element of another embodiment of the present application.

[Fig. 6] Fig. 6 is a top plan view showing a light-emitting element of another embodiment of the present application.

[Fig. 7] is a schematic exploded view of a light bulb according to an embodiment of the present application.

The embodiments of the present invention will be described in detail, and in the drawings, the same or the like

2A is a top view of a light-emitting element according to an embodiment of the present application, and FIG. 2B is a schematic cross-sectional view of the light-emitting element taken along line AA of FIG. 2A. As shown in FIG. 2B, a light-emitting element 2 has a substrate 20; a light-emitting layer 22 is disposed on the substrate 20; and a transparent conductive layer 24 is disposed on the light-emitting layer 22, wherein the light-emitting layer 22 has a first A semiconductor layer 220, an active layer 222 and a second semiconductor layer 224 are sequentially formed on the substrate 20. A first trench 25 is formed in the transparent conductive layer 24 and the light emitting layer 22, exposing the first upper surface 221 of the first semiconductor layer 220, so that the light emitting layer 22 and the transparent conductive layer above the first semiconductor layer 220 24 separates to form a first light emitting structure X and a second light emitting structure Y. In other words, the first light emitting structure X and the second light emitting structure Y have a common first semiconductor layer 220, but have a respective active layer 222, a second semiconductor layer 224 and a transparent conductive layer over different regions of the first semiconductor layer 220. twenty four. As shown in FIG. 2A, the second trenches 27 are formed in the first light emitting structure X and the second light emitting structure Y, respectively, and expose the first upper surface 221. The first electrode 21 is located above the first upper surface 221 of the second trench 27, and the second electrode 23 is located above the transparent conductive layer 24. The first trench 21 is located between the first light emitting structure X and the second light emitting structure Y, and the first electrode 21 and the second electrode 23 are located outside the first trench 25, that is, the electrode is not located in the first trench 25 The current can be uniformly diffused uniformly to the first light emitting structure X and the second light emitting structure Y, respectively, to improve the light emitting efficiency of the light emitting element 2, as shown in FIG. 2E. Viewed from the top view, the first light emitting structure X and the second light emitting structure Y have the same appearance pattern. Taking this embodiment as an example, the same appearance pattern has a rectangular structure of the same size, and the same The electrode design and the symmetrical electrode placement position facilitate the average current distribution and the alignment of the subsequent wire bonding process.

The first electrode 21 and/or the second electrode 23 are for receiving an external voltage and may be composed of a transparent conductive material or a metal material. Transparent conductive materials include, but are not limited to, indium tin oxide (ITO), indium oxide (InO), tin oxide (SnO), cadmium tin oxide (CTO), antimony tin oxide (ATO), aluminum zinc oxide (AZO), zinc tin oxide. (ZTO), gallium zinc oxide (GZO), indium tungsten oxide (IWO), zinc oxide (ZnO), aluminum gallium arsenide (AlGaAs), gallium nitride (GaN), gallium phosphide (GaP), gallium arsenide ( GaAs), phosphorus gallium arsenide (GaAsP), indium zinc oxide (IZO) or diamond-like carbon film (DLC). Metal materials include, but are not limited to, aluminum (Al), chromium (Cr), copper (Cu), tin (Sn), gold (Au), nickel (Ni), titanium (Ti), platinum (Pt), lead (Pb) , zinc (Zn), cadmium (Cd), antimony (Sb), cobalt (Co) or an alloy of the above materials. The first electrode 21 has a first wire bonding portion 21A and a plurality of first extending portions 21B extending from the first wire bonding portion 21A. The second electrode 23 has a second wire bonding portion 23A and a plurality of extending from the second wire bonding portion 23A. The second extending portion 23B, wherein the first wire bonding portion 21A and the second wire bonding portion 23A are used as the wire bonding position of the subsequent wire bonding process, and the plurality of first extending portions 21B and the plurality of second extending portions 23B are used for conducting current to increase current Diffusion enhances the luminous efficiency of the light-emitting element 2. The at least one first extending portion 21B is located between the two second extending portions 23B, so that the current is uniformly diffused, the current collecting portion is avoided, and the area of the light is reduced. The second semiconductor layer 224 has a first side 223 and a second side 225 away from the first side 223. The first wire portion 21A is adjacent to the first side 223, and the second wire portion 23A is adjacent to the second side 225. . The first wire bonding portion 21A and the first side edge 223 have a pitch D which is approximately equal to the size of the first wire bonding portion 21A. The size of the first wire-bonding portion 21A is exemplified by a circle, and D is a diameter of a circle. Taking a rectangular shape as an example, the pitch D is about the long side of the rectangle. Therefore, the current can be effectively diffused after being injected from the first wire bonding portion 21A, and the luminous efficiency of the light-emitting element 2 is improved. In another embodiment, the spacing D is from about 60 microns to about 100 microns. Further, at least one of the first extending portions 21B is different from the other first extending portions 21B. Taking this embodiment as an example, a first extension 21B Extending to the first side 223, the other first extending portion 21B extends toward the second side 225, thereby promoting current spreading and improving the luminous efficiency of the light-emitting element 2.

The transparent conductive layer 24 serves to increase the ohmic contact between the light-emitting layer 22 and the second electrode 23 and to facilitate current diffusion to improve the light-emitting efficiency of the light-emitting element 2. The transparent conductive layer 24 is transparent to the light emitted by the light-emitting layer 22, and the material thereof may be a conductive material, including but not limited to indium tin oxide (ITO), indium oxide (InO), tin oxide (SnO), and cadmium tin oxide ( CTO), antimony tin oxide (ATO), aluminum zinc oxide (AZO), zinc tin oxide (ZTO), gallium zinc oxide (GZO), zinc oxide (ZnO), magnesium oxide (MgO), aluminum gallium arsenide (AlGaAs) , gallium nitride (GaN), gallium phosphide (GaP) or indium zinc oxide (IZO). The material of the light-emitting layer 22 may be a semiconductor material containing more than one element selected from the group consisting of gallium (Ga), aluminum (Al), indium (In), phosphorus (P), nitrogen (N), and zinc (Zn). ), a group of cadmium (Cd) and selenium (Se). The first semiconductor layer 220 and the second semiconductor layer 224 are electrically different to generate electrons or holes. In another embodiment, the second semiconductor layer 224 has a rough upper surface for reducing total reflection and improving the luminous efficiency of the light-emitting element 2. The active layer 222 can emit one or more colored lights, which may be visible or invisible, and may be of a single heterostructure, a double heterostructure, a double-sided double heterostructure, a multilayer quantum well or a quantum dot.

The substrate 20 can be used to support the light-emitting laminate 22 and other layers or structures thereon, the material of which can be a transparent material or a conductive material. Transparent materials include, but are not limited to, Sapphire, Diamond, Glass, Epoxy, Quartz, Acryl, Al2O3, Zinc Oxide (ZnO) ) or aluminum nitride (AlN) or the like. Conductive materials include, but are not limited to, copper (Cu), aluminum (Al), molybdenum (Mo), tin (Sn), zinc (Zn), cadmium (Cd), nickel (Ni), cobalt (Co), diamond-like carbon film (Diamond Like Carbon; DLC), Graphite, Carbon Fiber, Metal Matrix Composite (MMC), Ceramic Matrix Composite (CMC), Germanium (Si), Phosphating Iodine (IP), zinc selenide (ZnSe), gallium arsenide (GaAs), tantalum carbide (SiC), gallium phosphide (GaP), gallium arsenide (GaAsP), zinc selenide (ZnSe), Indium phosphide (InP), lithium gallate (LiGaO2) or lithium aluminate (LiAlO2). Materials in which the light-emitting laminate can be grown are, for example, sapphire, gallium arsenide, tantalum carbide (SiC) or tantalum. The substrate 20 has a patterned upper surface 200 for improving the quality of the epitaxial growth from the substrate 20 and the light emitted by the light-emitting layer 22, thereby improving the luminous efficiency of the light-emitting element 2.

2C to 2D are views showing a manufacturing flow chart of the light-emitting element 2' of another embodiment. As shown in FIG. 2C, a light-emitting layer 22 is formed on the substrate 20, and a portion of the second semiconductor layer 224 and the active layer 222 are removed to form a first trench 25 and a second trench 27 to expose the first semiconductor layer 220. a first upper surface 221, wherein the first trench 25 separates the second semiconductor layer 224 from the active layer 222 into a first light emitting structure X and a second light emitting structure Y, and the second trenches 27 are respectively located in the first light emitting structure X And the second light emitting structure Y. As shown in FIG. 2D, a transparent conductive layer 24 is formed on the second semiconductor layer 224, a first electrode 21 is formed in the second trench 27, and a second electrode 23 is over the transparent conductive layer 24. A light-emitting element 2' is formed.

3A and 3B are schematic top views of the light-emitting elements 3 and 3' of another embodiment. As shown in FIG. 3A, the light-emitting element 3 has a similar structure of the light-emitting element 2, and further has a third trench 31 and a fourth trench 33 exposing the first upper surface 221, wherein the third trench 31 and the third trench The four trenches 33 are not parallel to the first trenches 25 and the second trenches 27, so the third trenches 31 and the fourth trenches 33 and the first trenches 25 are interleaved with the second trenches 27 such that the first light emitting structure The X and the second light emitting structure Y are respectively separated into a plurality of light emitting regions having a small area. The plurality of first bridges 30 are respectively located between the plurality of light-emitting regions where the first light-emitting structure X and the second light-emitting structure Y are separated, and are located in the third trench 31 and the fourth trench 33 for connecting the plurality of The plurality of second extending portions 23B are extendable over the plurality of first bridging portions 30 to extend to the plurality of light emitting regions to conduct current to the plurality of light emitting regions. Since the first light emitting structure X and the second light emitting structure Y are respectively separated into a plurality of light emitting regions having a small area, current is conducted to each of the light emitting regions via the plurality of second extending portions 23B, and the plurality of small areas are illuminated. The area spreads evenly to enhance the emission of the light-emitting element 3 Light efficiency. As shown in FIG. 3B, the light-emitting element 3' has a similar structure of the light-emitting element 2, wherein the second trench 27 separates the first light-emitting structure X and the second light-emitting structure Y into a plurality of light-emitting regions having a small area, respectively. The electrically insulating layer 32 is formed in the second trench 27 and above the light emitting region, away from the first bonding region 21A, the second wiring portion 23A is formed on the electrically insulating layer 32, and the second extension portion 23B is located on the electrically insulating layer 32. It extends above and extends to a plurality of light-emitting areas. Since the first light emitting structure X and the second light emitting structure Y are respectively separated into a plurality of light emitting regions having a small area, current is conducted to each of the light emitting regions via the plurality of second extending portions 23B, and the plurality of small areas are illuminated. The region spreads evenly, improving the luminous efficiency of the light-emitting element 3'. In the above embodiment, the first bridging portion 30 and/or the electrically insulating layer 32 may electrically insulate the second electrode 23 and the first semiconductor layer 220, and the material thereof may be an electrically insulating material, such as polyiminamide (PI) or benzene. And cyclobutene (BCB), perfluorocyclobutane (PFCB), magnesium oxide (MgO), Su8, epoxy resin (Epoxy), acrylic resin (Acrylic Resin), cycloolefin polymer (COC), polymethyl Methyl acrylate (PMMA), polyethylene terephthalate (PET), polycarbonate (PC), polyetherimide, fluorocarbon polymer, glass, oxidation Aluminum (Al2O3), yttrium oxide (SiOx), titanium oxide (TiO2), lanthanum oxide (Ta2O5), tantalum nitride (SiNx), magnesium fluoride (MgF2), spin-on glass (SOG) or tetraethoxy decane ( TEOS).

4A and 4B are schematic top views of the light-emitting elements 4 and 4' of another embodiment. A light-emitting element 4 is similar in structure to the light-emitting element 2, having a substrate 20; a light-emitting layer 22 on top of the substrate 20; and a transparent conductive layer 24 on the light-emitting layer 22, wherein the light-emitting layer 22 has a first semiconductor layer 220 The active layer 222 and the second semiconductor layer 224 are sequentially formed on the substrate 20. As shown in FIG. 4A, a first trench 41 is formed in the transparent conductive layer 24 and the light emitting laminate 22, exposing the first upper surface 221 such that the light emitting layer 22 and the transparent conductive layer above the first semiconductor layer 220 24 is substantially separated to form the first light emitting structure X and the second light emitting structure Y. In this embodiment, the light-emitting layer 22 and the transparent conductive layer 24 are not completely removed when the first trench 41 is formed, and a partial light-emitting stack is retained. The layer 22 and the transparent conductive layer 24 are formed to form a first bridge portion 40 for connecting the first light emitting structure X and the second light emitting structure Y. The first electrode 21 is formed in the first trench 41; the second electrode 23 is formed on the first bridge portion 40 to conduct current to the first light emitting structure X and the second light emitting structure Y because the first light emitting structure X There is a small light-emitting layer area between the second light-emitting structure Y and the second light-emitting structure Y, and the current can uniformly diffuse the first light-emitting structure X and the second light-emitting structure Y, respectively, and improve the light-emitting efficiency of the light-emitting element 4. Viewed from the top view, the first light emitting structure X and the second light emitting structure Y have the same appearance pattern. Taking this embodiment as an example, the same appearance pattern has a rectangular structure having the same size, and the same electrode design and symmetric electrode placement position are favorable for the current average distribution and the alignment identification of the subsequent wire bonding process.

As shown in FIG. 4B, the light-emitting element 4' has a similar structure of the light-emitting element 4, and further has a second trench 43 and a third trench 45 exposing the first upper surface 221, wherein the second trench 43 is The third trench 45 is not parallel to the first trench 41, so the second trench 43 is interleaved with the third trench 45 and the first trench 41 such that the first light emitting structure X and the second light emitting structure Y are respectively separated into A plurality of light-emitting areas having a small area. The plurality of second bridge portions 42 are located between the plurality of light-emitting regions where the first light-emitting structure X and the second light-emitting structure Y are separated, and are respectively located in the second trench 43 and the third trench 45 for connecting the plurality of the plurality of light-emitting regions Light-emitting areas. The second trench 43 is divided into a first region 431 and a second region 432 by a plurality of second bridge portions 42 , and the second bridge portion 42 is located between the first region 431 and the second region 432 . The third trench 45 is divided by the plurality of second bridges 42 into a third region 451 and a fourth region 452, and the second bridge portion 42 is located between the third region 451 and the fourth region 452. In this embodiment, the light-emitting layer 22 and the transparent conductive layer 24 are not completely removed when the second trench 43 and the third trench 45 are formed, and the partial light-emitting layer 22 and the transparent conductive layer 24 are left to form a plurality of second bridges. Part 42. The plurality of second extensions 23B may extend over the plurality of second bridges 42 to extend to the plurality of illumination regions to conduct current to the plurality of illumination regions. Since the first light emitting structure X and the second light emitting structure Y are respectively divided into a plurality of light emitting regions having a small area, current is conducted to each of the plurality of second extending portions 23B. The light-emitting region can be uniformly diffused in a plurality of light-emitting regions having a small area to enhance the light-emitting efficiency of the light-emitting element 4'. As shown in FIG. 4C, the light-emitting element 4" has a similar structure of the light-emitting element 4, and an exposed portion 47 is formed around the first light-emitting structure X and the second light-emitting structure Y to expose the first upper surface 221, wherein a portion thereof The exposed portion 47 is not parallel to the first trench 41, and the other portion of the exposed portion 47 is parallel to the first trench 41. The second electrode 23 is formed on the first bridge portion 40, the first light emitting structure X and the second light emitting structure Y The first electrode 21 is formed in the exposed portion 47, and the plurality of first extending portions 21B extend along the exposed portion 47, and the current can uniformly diffuse the first light emitting structure X and the second light emitting structure Y, respectively, to enhance the light emitting element 4" Luminous efficiency.

5A and 5B are schematic top views of the light-emitting elements 5 and 5' of another embodiment. As shown in FIG. 5A, the light-emitting element 5 has a similar structure of the light-emitting element 2, and a first trench 50 is formed in the transparent conductive layer 24 and the light-emitting layer 22 to expose the first upper surface 221 such that the first semiconductor layer The light-emitting layer 22 of 220 or more is substantially separated from the transparent conductive layer 24 to form the first light-emitting structure X and the second light-emitting structure Y. In this embodiment, the light-emitting layer 22 and the transparent conductive layer 24 are not completely removed when the first trench 50 is formed, and the partial light-emitting layer 22 and the transparent conductive layer 24 are left to form a first bridge portion 54 for connecting A light emitting structure X and a second light emitting structure Y. The second trenches 27 are respectively formed in the first light emitting structure X and the second light emitting structure Y to expose the first upper surface 221. The first electrode 21 is located above the first upper surface 221 of the second trench 27, and the second electrode 23 is located above the transparent conductive layer 24. A third trench 52 is formed in the transparent conductive layer 24 and the light emitting laminate 22 to expose the first upper surface 221, wherein the third trench 52 is not parallel to the first trench 50, so the third trench 52 and the A groove 50 is staggered. A first connecting line 51 is formed in the third trench 52, and is electrically connected to the first wiring portion 21A of the first light emitting structure X and the second light emitting structure Y, respectively. A second connecting line 53 is formed on the first bridge portion 54, the first light emitting structure X and the second light emitting structure Y, and is electrically connected to the second light emitting portion 23A of the first light emitting structure X and the second light emitting structure Y, respectively. The first connecting line 51 and the second connecting line 53 are electrically connected to the first wiring portion 21A of the first light emitting structure X and the second light emitting structure Y, respectively. With the second wire bonding portion 23A, current is uniformly distributed in the first light emitting structure X and the second light emitting structure Y, and the light emitting efficiency of the light emitting element 5 is improved. Viewed from the top view, the first light emitting structure X and the second light emitting structure Y have the same appearance pattern. Taking this embodiment as an example, the same appearance pattern has a rectangular structure of the same size, and the same electrode design and symmetrical electrode placement position are favorable for the current average distribution and the alignment identification of the subsequent wire bonding process. As shown in FIG. 5B, the light-emitting element 5' has a similar structure of the light-emitting element 5, and the third trench 52 is formed on the first light-emitting structure X and the second light-emitting structure Y, and is close to the first side 223, and is reduced to form a third The light-emitting laminate 22 to be removed by the trenches 52 avoids reducing the area of the light-emitting region.

FIG. 6 is a schematic top view of a light-emitting element 6 of another embodiment. As shown in FIG. 6, the light-emitting element 6 has a similar structure of the light-emitting element 2, and a first trench 60 is formed in the transparent conductive layer 24 and the light-emitting layer 22, exposing the first upper surface 221 so that the first semiconductor layer The light-emitting layer 22 of 220 or more is substantially separated from the transparent conductive layer 24 to form the first light-emitting structure X and the second light-emitting structure Y. The second trenches 62 are respectively formed in the first light emitting structure X and the second light emitting structure Y to expose the first upper surface 221 . An exposed portion 64 is formed around the first light emitting structure X and the second light emitting structure Y, exposing the first upper surface 221, wherein the partial exposed portion 64 is not parallel to the first trench 60, and the other portion of the exposed portion 64 is parallel to the first trench Slot 60. The second electrode 23 is formed on the first light emitting structure X and the second light emitting structure Y. The first wire drawing portion 21A is formed on the exposed portion 64, and the plurality of first extending portions 21B are along the exposed portion 64 and the first groove 60. The current can uniformly diffuse the first light emitting structure X and the second light emitting structure Y, respectively, to improve the luminous efficiency of the entire light emitting element 6. Viewed from the top view, the first light emitting structure X and the second light emitting structure Y have the same appearance pattern. Taking this embodiment as an example, the same appearance pattern has a rectangular structure having the same size, and the same electrode design and symmetric electrode placement position are favorable for the current average distribution and the alignment identification of the subsequent wire bonding process.

Figure 7 is a schematic exploded view of a bulb, a bulb 7 having a lamp cover 71; a lens 72 disposed in the lamp cover 71; a lighting module 74 located below the lens 72; a lamp holder 75 having There is a heat sink 76 for carrying the lighting module 74; a connecting portion 77; and an electrical connector 78, wherein the connecting portion 77 connects the socket 75 and the electrical connector 78. The illumination module 74 has a carrier 73; and a plurality of the light-emitting elements 70 of any of the foregoing embodiments are located above the carrier 73.

However, the above embodiments are merely illustrative of the principles and effects of the present application, and are not intended to limit the present application. Modifications and variations of the above-described embodiments can be made without departing from the spirit and scope of the invention. Therefore, the scope of protection of the present application is as set forth in the scope of the patent application described below.

Claims (10)

a light emitting device comprising: a first semiconductor layer; a first light emitting structure, a second light emitting structure, and a third light emitting structure over the first semiconductor layer, wherein the first semiconductor layer is continuous; a first trench between the first light emitting structure and the second light emitting structure, exposing an upper surface of the first semiconductor layer; a second trench located in the second light emitting structure and the third light emitting structure Exposing the upper surface of the first semiconductor layer; a third trench is disposed in one of the light emitting structures to expose the first semiconductor layer, wherein the third trench follows a first extending direction Extending, the first extending direction is parallel to the first semiconductor layer; an insulating bridge portion is located in the first trench and the second trench to connect the light emitting structures; a first electrode is located in the third trench And electrically connecting the first semiconductor layer; and a second electrode comprising a second wire portion on one of the light emitting structures, and a second extending portion extending from the second wire Department; the second The protruding portion is located on the insulating bridge portion and extends to the light emitting structures; wherein the light emitting structures each include an active layer on the first semiconductor layer; and a second semiconductor layer is disposed on the active layer; The first trench and the second trench separate the active layers of the light emitting structures from each other. The light-emitting element of claim 1, wherein the first light-emitting structure and the second light-emitting structure further comprise: a transparent conductive layer on the second semiconductor layer. The light-emitting element of claim 1, wherein the first electrode comprises a first wire-bonding portion and a first extension portion extending from the first wire-bonding portion. The illuminating element of claim 1, wherein the first electrode comprises an extending direction parallel to the first groove. The illuminating element of claim 3, further comprising a first side edge, a second side edge, a third side edge and a fourth side edge, wherein the first side edge is opposite to the third side edge And the second side is opposite to the fourth side; wherein the first line is adjacent to the first side, and the second line is adjacent to the third side. The illuminating element of claim 1, wherein the second electrode comprises a plurality of second extensions, wherein the first electrode is located between the second extensions. The illuminating element of claim 1, wherein the first illuminating structure and the second illuminating structure comprise the same appearance pattern in a plan view. The illuminating element of claim 1, wherein the first groove has a width equal to that of the upper view. The light-emitting element of claim 1, wherein the first trench and/or the second trench do not have the first electrode. The light-emitting element of claim 1, further comprising an exposed portion surrounding the first light-emitting structure, the second light-emitting structure, and the third light-emitting structure.