SG10201805116YA - Semiconductor devices and manufacturing methods thereof - Google Patents
Semiconductor devices and manufacturing methods thereofInfo
- Publication number
- SG10201805116YA SG10201805116YA SG10201805116YA SG10201805116YA SG10201805116YA SG 10201805116Y A SG10201805116Y A SG 10201805116YA SG 10201805116Y A SG10201805116Y A SG 10201805116YA SG 10201805116Y A SG10201805116Y A SG 10201805116YA SG 10201805116Y A SG10201805116Y A SG 10201805116YA
- Authority
- SG
- Singapore
- Prior art keywords
- region
- semiconductor devices
- manufacturing methods
- layers
- substrate
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000000758 substrate Substances 0.000 abstract 2
- 239000000203 mixture Substances 0.000 abstract 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78696—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel
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- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
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- H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
- H01L29/0688—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions characterised by the particular shape of a junction between semiconductor regions
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
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- H01L29/0673—Nanowires or nanotubes oriented parallel to a substrate
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- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
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- H01L29/161—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System including two or more of the elements provided for in group H01L29/16, e.g. alloys
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- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
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- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
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- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
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- H01L29/42392—Gate electrodes for field effect devices for field-effect transistors with insulated gate for thin film field effect transistors, e.g. characterised by the thickness or the shape of the insulator or the dimensions, the shape or the lay-out of the conductor fully surrounding the channel, e.g. gate-all-around
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
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- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66234—Bipolar junction transistors [BJT]
- H01L29/66325—Bipolar junction transistors [BJT] controlled by field-effect, e.g. insulated gate bipolar transistors [IGBT]
- H01L29/66333—Vertical insulated gate bipolar transistors
- H01L29/66348—Vertical insulated gate bipolar transistors with a recessed gate
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
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- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66439—Unipolar field-effect transistors with a one- or zero-dimensional channel, e.g. quantum wire FET, in-plane gate transistor [IPG], single electron transistor [SET], striped channel transistor, Coulomb blockade transistor
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
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- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66545—Unipolar field-effect transistors with an insulated gate, i.e. MISFET using a dummy, i.e. replacement gate in a process wherein at least a part of the final gate is self aligned to the dummy gate
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
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- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/775—Field effect transistors with one dimensional charge carrier gas channel, e.g. quantum wire FET
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
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- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
- H01L29/78618—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure
Abstract
Page A semiconductor device includes a substrate, a plurality of channel layers stacked on the substrate, a gate electrode surrounding the plurality of channel layers, and embedded source/drain layers on opposing sides of the gate electrode. The embedded source/drain layers each have a first region and a second region on the first 5 region. The second region has a plurality of layers having different compositions. FIG. 2
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020170109428A KR102385567B1 (en) | 2017-08-29 | 2017-08-29 | Semiconductor devices and method of manufacturing semiconductor devices |
Publications (1)
Publication Number | Publication Date |
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SG10201805116YA true SG10201805116YA (en) | 2019-03-28 |
Family
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Family Applications (1)
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SG10201805116YA SG10201805116YA (en) | 2017-08-29 | 2018-06-14 | Semiconductor devices and manufacturing methods thereof |
Country Status (5)
Country | Link |
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US (3) | US10872983B2 (en) |
KR (2) | KR102385567B1 (en) |
CN (1) | CN109427871A (en) |
SG (1) | SG10201805116YA (en) |
TW (2) | TWI770192B (en) |
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KR102385567B1 (en) * | 2017-08-29 | 2022-04-12 | 삼성전자주식회사 | Semiconductor devices and method of manufacturing semiconductor devices |
US11158727B2 (en) * | 2018-07-31 | 2021-10-26 | Taiwan Semiconductor Manufacturing Co., Ltd. | Structure and method for gate-all-around device with extended channel |
KR102655419B1 (en) * | 2019-05-14 | 2024-04-05 | 삼성전자주식회사 | Semiconductor devices |
KR20200136688A (en) * | 2019-05-28 | 2020-12-08 | 삼성전자주식회사 | Semiconductor device and method of fabricating the same |
US10903365B2 (en) * | 2019-06-19 | 2021-01-26 | International Business Machines Corporation | Transistors with uniform source/drain epitaxy |
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US11489063B2 (en) * | 2019-08-30 | 2022-11-01 | Taiwan Semiconductor Manufacturing Co., Ltd | Method of manufacturing a source/drain feature in a multi-gate semiconductor structure |
KR20210032845A (en) * | 2019-09-17 | 2021-03-25 | 삼성전자주식회사 | Integrated circuit device and method of manufacturing the same |
US11322493B2 (en) * | 2019-10-30 | 2022-05-03 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method (and related apparatus) for forming a semiconductor device with reduced spacing between nanostructure field-effect transistors |
KR20210092360A (en) | 2020-01-15 | 2021-07-26 | 삼성전자주식회사 | Semiconductor device |
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US11695055B2 (en) * | 2020-03-03 | 2023-07-04 | Taiwan Semiconductor Manufacturing Co., Ltd. | Passivation layers for semiconductor devices |
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KR20210145334A (en) | 2020-05-25 | 2021-12-02 | 삼성전자주식회사 | Semiconductor device and method for manufacturing the same |
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KR20220020715A (en) * | 2020-08-12 | 2022-02-21 | 삼성전자주식회사 | Integrated circuit device |
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CN114093943A (en) * | 2020-08-24 | 2022-02-25 | 中国科学院微电子研究所 | Semiconductor device and manufacturing method thereof |
KR20220030374A (en) * | 2020-08-28 | 2022-03-11 | 삼성전자주식회사 | Semiconductor devices |
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-
2017
- 2017-08-29 KR KR1020170109428A patent/KR102385567B1/en active IP Right Grant
-
2018
- 2018-02-20 US US15/900,175 patent/US10872983B2/en active Active
- 2018-06-11 TW TW107119951A patent/TWI770192B/en active
- 2018-06-11 CN CN201810596906.2A patent/CN109427871A/en active Pending
- 2018-06-11 TW TW111121685A patent/TWI812271B/en active
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2020
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2022
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US20190067490A1 (en) | 2019-02-28 |
US11908952B2 (en) | 2024-02-20 |
KR102483549B1 (en) | 2023-01-02 |
US20210091232A1 (en) | 2021-03-25 |
TW201914018A (en) | 2019-04-01 |
KR20220042081A (en) | 2022-04-04 |
US20220310852A1 (en) | 2022-09-29 |
KR20190023527A (en) | 2019-03-08 |
TW202239001A (en) | 2022-10-01 |
KR102385567B1 (en) | 2022-04-12 |
TWI770192B (en) | 2022-07-11 |
TWI812271B (en) | 2023-08-11 |
CN109427871A (en) | 2019-03-05 |
US11393929B2 (en) | 2022-07-19 |
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