SG11202000144YA - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
SG11202000144YA
SG11202000144YA SG11202000144YA SG11202000144YA SG11202000144YA SG 11202000144Y A SG11202000144Y A SG 11202000144YA SG 11202000144Y A SG11202000144Y A SG 11202000144YA SG 11202000144Y A SG11202000144Y A SG 11202000144YA SG 11202000144Y A SG11202000144Y A SG 11202000144YA
Authority
SG
Singapore
Prior art keywords
semiconductor device
semiconductor region
barrier
semiconductor
adjustment regions
Prior art date
Application number
SG11202000144YA
Inventor
Masahiro Sugimoto
Isao Takahashi
Hitoshi Kambara
Takashi Shinohe
Toshimi Hitora
Original Assignee
Flosfia Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Flosfia Inc filed Critical Flosfia Inc
Publication of SG11202000144YA publication Critical patent/SG11202000144YA/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
    • H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
    • H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
    • H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
    • H01L29/0619—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE] with a supplementary region doped oppositely to or in rectifying contact with the semiconductor containing or contacting region, e.g. guard rings with PN or Schottky junction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H01L29/872—Schottky diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/04—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
    • H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
    • H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
    • H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
    • H01L29/0619—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE] with a supplementary region doped oppositely to or in rectifying contact with the semiconductor containing or contacting region, e.g. guard rings with PN or Schottky junction
    • H01L29/0623—Buried supplementary region, e.g. buried guard ring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/24—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only semiconductor materials not provided for in groups H01L29/16, H01L29/18, H01L29/20, H01L29/22
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/47—Schottky barrier electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66969—Multistep manufacturing processes of devices having semiconductor bodies not comprising group 14 or group 13/15 materials

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Noodles (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Bipolar Transistors (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)

Abstract

SEMICONDUCTOR DEVICE A semiconductor device with an enhanced semiconductor characteristics that is useful for power devices. A semiconductor device including: a semiconductor region; a barrier electrode arranged on the semiconductor region; and two or more adjustment regions of barrier height that are on a surface of the semiconductor region and arranged between the semiconductor region and the barrier electrode, the adjustment regions are configured such that barrier height at an interface between the adjustment regions and the barrier electrode is higher than barrier height at an interface between the semiconductor region and the barrier electrode. FIG. 13
SG11202000144YA 2017-07-08 2018-07-06 Semiconductor device SG11202000144YA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2017134243 2017-07-08
PCT/JP2018/025767 WO2019013136A1 (en) 2017-07-08 2018-07-06 Semiconductor device

Publications (1)

Publication Number Publication Date
SG11202000144YA true SG11202000144YA (en) 2020-02-27

Family

ID=65002661

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11202000144YA SG11202000144YA (en) 2017-07-08 2018-07-06 Semiconductor device

Country Status (8)

Country Link
US (1) US11450774B2 (en)
EP (1) EP3654387A4 (en)
JP (2) JP7313609B2 (en)
KR (2) KR20230044336A (en)
CN (1) CN110870079B (en)
SG (1) SG11202000144YA (en)
TW (1) TWI783003B (en)
WO (1) WO2019013136A1 (en)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2020013242A1 (en) * 2018-07-12 2020-01-16 株式会社Flosfia Semiconductor device
WO2020013243A1 (en) * 2018-07-12 2020-01-16 株式会社Flosfia Semiconductor apparatus
EP3823041A4 (en) * 2018-07-12 2022-04-20 Flosfia Inc. Semiconductor apparatus
JP7279587B2 (en) * 2018-09-25 2023-05-23 豊田合成株式会社 Semiconductor device manufacturing method
CN113891859A (en) * 2019-03-29 2022-01-04 株式会社Flosfia Crystal, crystalline oxide semiconductor, semiconductor film including crystalline oxide semiconductor, semiconductor device including crystal and/or semiconductor film, and system including semiconductor device
EP3823045A1 (en) 2019-11-14 2021-05-19 Flosfia Inc. Semiconductor device and system including semiconductor
JP2022061884A (en) * 2020-10-07 2022-04-19 株式会社タムラ製作所 Schottky diode
CN113066870B (en) * 2021-03-25 2022-05-24 电子科技大学 Gallium oxide-based junction barrier Schottky diode with terminal structure

Family Cites Families (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52101970A (en) 1976-02-20 1977-08-26 Sumitomo Electric Ind Ltd Semiconductor element having schottoky barriercontact
JPH0642541B2 (en) 1988-04-22 1994-06-01 サンケン電気株式会社 Schottky barrier semiconductor device
JPH05326925A (en) * 1992-05-14 1993-12-10 Shindengen Electric Mfg Co Ltd Shottky barrier semiconductor device
JPH1084120A (en) * 1996-09-09 1998-03-31 Toshiba Corp Semiconductor device
JP2006318956A (en) 2005-05-10 2006-11-24 Sumitomo Electric Ind Ltd Semiconductor device having schottky diode
JP2006352028A (en) 2005-06-20 2006-12-28 Sumitomo Electric Ind Ltd Rectifier element and manufacturing method thereof
JP2008172035A (en) 2007-01-12 2008-07-24 Univ Of Fukui Schottky diode
JP5414019B2 (en) * 2008-04-01 2014-02-12 独立行政法人産業技術総合研究所 Diamond electronic device with barrier height control
JP5382763B2 (en) * 2008-04-09 2014-01-08 独立行政法人産業技術総合研究所 SEMICONDUCTOR ELEMENT, ITS MANUFACTURING METHOD, AND ELECTRONIC DEVICE HAVING THE SEMICONDUCTOR ELEMENT
JP2010225914A (en) 2009-03-24 2010-10-07 Sanyo Electric Co Ltd Schottky barrier diode
US9117739B2 (en) * 2010-03-08 2015-08-25 Cree, Inc. Semiconductor devices with heterojunction barrier regions and methods of fabricating same
US8816468B2 (en) * 2010-10-21 2014-08-26 Vishay General Semiconductor Llc Schottky rectifier
JP2012175090A (en) * 2011-02-24 2012-09-10 Panasonic Corp Schottky-barrier semiconductor device
JP5306392B2 (en) * 2011-03-03 2013-10-02 株式会社東芝 Semiconductor rectifier
WO2013121532A1 (en) * 2012-02-15 2013-08-22 富士電機株式会社 Wide band gap semiconductor device
JP6053103B2 (en) * 2012-04-12 2016-12-27 富士電機株式会社 Wide band gap semiconductor device and method of manufacturing the same
JP2014053393A (en) 2012-09-06 2014-03-20 Sumitomo Electric Ind Ltd Wide gap semiconductor device and method for manufacturing the same
JP2014078660A (en) 2012-10-12 2014-05-01 Sumitomo Electric Ind Ltd Wide gap semiconductor device and method for manufacturing the same
JP6064547B2 (en) 2012-11-28 2017-01-25 サンケン電気株式会社 Semiconductor device
US9691910B2 (en) * 2013-08-19 2017-06-27 Idemitsu Kosan Co., Ltd. Oxide semiconductor substrate and schottky barrier diode
JP6242724B2 (en) 2014-03-20 2017-12-06 株式会社東芝 Semiconductor device and manufacturing method thereof
CN106415845B (en) 2014-07-22 2019-12-10 株式会社Flosfia Crystalline semiconductor film, plate-like body, and semiconductor device
JP6411258B2 (en) 2015-03-19 2018-10-24 新電元工業株式会社 Semiconductor device
JP6873926B2 (en) 2015-06-09 2021-05-19 アーベーベー・シュバイツ・アーゲーＡＢＢ Ｓｃｈｗｅｉｚ ＡＧ How to Manufacture Edge Terminations for Silicon Carbide Power Semiconductor Devices
JP2017118090A (en) * 2015-12-21 2017-06-29 株式会社Flosfia Laminate structure and semiconductor device
TWI726964B (en) * 2015-12-25 2021-05-11 日商出光興產股份有限公司 Layered body
JP6767705B2 (en) * 2016-04-28 2020-10-14 パナソニックＩｐマネジメント株式会社 Semiconductor element
JP6967238B2 (en) 2017-02-28 2021-11-17 株式会社タムラ製作所 Schottky barrier diode

Also Published As

Publication number Publication date
TW201907572A (en) 2019-02-16
WO2019013136A1 (en) 2019-01-17
KR20230044336A (en) 2023-04-03
US20200152805A1 (en) 2020-05-14
KR20200020785A (en) 2020-02-26
EP3654387A1 (en) 2020-05-20
EP3654387A4 (en) 2021-03-31
TWI783003B (en) 2022-11-11
JPWO2019013136A1 (en) 2020-06-18
CN110870079A (en) 2020-03-06
JP7313609B2 (en) 2023-07-25
US11450774B2 (en) 2022-09-20
JP2023068204A (en) 2023-05-16
CN110870079B (en) 2024-01-09

Similar Documents

Publication Publication Date Title
SG11202000144YA (en) Semiconductor device
SG10201805096YA (en) Semiconductor device and method for fabricating the same
SG10201805116YA (en) Semiconductor devices and manufacturing methods thereof
SG10201804042RA (en) Semiconductor Memory Devices
SG10201805426YA (en) Three-dimensional semiconductor device
TW201613098A (en) Semiconductor device
TW201712807A (en) Vertical integration scheme and circuit elements architecture for area scaling of semiconductor devices
JP2016149552A5 (en) Semiconductor device and electronic equipment
EP2849230A3 (en) Semiconductor device
GB2533063A (en) Structures and methods with reduced sensitivity to surface charge
SG10201803186XA (en) Semiconductor device
SG10201808204VA (en) Semiconductor devices and methods of manufacturing the same
WO2015159183A3 (en) Semiconductor device and display device having the same
SG10201803922PA (en) Semiconductor Device
TW201614838A (en) Semiconductor device and methods for forming the same
TW201613102A (en) Semiconductor device and method
TW201613063A (en) Semiconductor device
SG10201804431UA (en) Semiconductor device including a gate insulation pattern and a gate electrode pattern
TW201614831A (en) Semiconductor device
EP2988339A3 (en) Light emitting device
TW201614806A (en) Semiconductor structure
SG10201804909VA (en) Chip structure including heating element
EP2999000A3 (en) Semiconductor device
SG10201805399SA (en) Semiconductor device
TW201614792A (en) Semiconductor devices and methods for manufacturing the same