FR2834125B1 - Dispositif a semi-conducteurs comportant un isolant en tranchee et procede pour la fabrication de ce dispositif - Google Patents

Dispositif a semi-conducteurs comportant un isolant en tranchee et procede pour la fabrication de ce dispositif

Info

Publication number
FR2834125B1
FR2834125B1 FR0211175A FR0211175A FR2834125B1 FR 2834125 B1 FR2834125 B1 FR 2834125B1 FR 0211175 A FR0211175 A FR 0211175A FR 0211175 A FR0211175 A FR 0211175A FR 2834125 B1 FR2834125 B1 FR 2834125B1
Authority
FR
France
Prior art keywords
manufacturing
semiconductor device
same
trench insulation
trench
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR0211175A
Other languages
English (en)
Other versions
FR2834125A1 (fr
Inventor
Toshiaki Iwamatsu
Takashi Ipposhi
Takuji Matsumoto
Shigenobu Maeda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Publication of FR2834125A1 publication Critical patent/FR2834125A1/fr
Application granted granted Critical
Publication of FR2834125B1 publication Critical patent/FR2834125B1/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
    • H01L21/26513—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors of electrically active species
    • H01L21/2652—Through-implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76264—SOI together with lateral isolation, e.g. using local oxidation of silicon, or dielectric or polycristalline material refilled trench or air gap isolation regions, e.g. completely isolated semiconductor islands
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76264—SOI together with lateral isolation, e.g. using local oxidation of silicon, or dielectric or polycristalline material refilled trench or air gap isolation regions, e.g. completely isolated semiconductor islands
    • H01L21/76283—Lateral isolation by refilling of trenches with dielectric material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/84—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being other than a semiconductor body, e.g. being an insulating body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1203—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body the substrate comprising an insulating body on a semiconductor body, e.g. SOI
FR0211175A 2001-12-20 2002-09-10 Dispositif a semi-conducteurs comportant un isolant en tranchee et procede pour la fabrication de ce dispositif Expired - Fee Related FR2834125B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001387522A JP4139105B2 (ja) 2001-12-20 2001-12-20 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
FR2834125A1 FR2834125A1 (fr) 2003-06-27
FR2834125B1 true FR2834125B1 (fr) 2005-06-17

Family

ID=19188076

Family Applications (1)

Application Number Title Priority Date Filing Date
FR0211175A Expired - Fee Related FR2834125B1 (fr) 2001-12-20 2002-09-10 Dispositif a semi-conducteurs comportant un isolant en tranchee et procede pour la fabrication de ce dispositif

Country Status (5)

Country Link
US (3) US6875663B2 (fr)
JP (1) JP4139105B2 (fr)
KR (1) KR100487045B1 (fr)
FR (1) FR2834125B1 (fr)
TW (1) TW552715B (fr)

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JP4139105B2 (ja) * 2001-12-20 2008-08-27 株式会社ルネサステクノロジ 半導体装置の製造方法
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US7648869B2 (en) * 2006-01-12 2010-01-19 International Business Machines Corporation Method of fabricating semiconductor structures for latch-up suppression
US20070158779A1 (en) * 2006-01-12 2007-07-12 International Business Machines Corporation Methods and semiconductor structures for latch-up suppression using a buried damage layer
US7276768B2 (en) * 2006-01-26 2007-10-02 International Business Machines Corporation Semiconductor structures for latch-up suppression and methods of forming such semiconductor structures
US7491618B2 (en) * 2006-01-26 2009-02-17 International Business Machines Corporation Methods and semiconductor structures for latch-up suppression using a conductive region
US20070194403A1 (en) * 2006-02-23 2007-08-23 International Business Machines Corporation Methods for fabricating semiconductor device structures with reduced susceptibility to latch-up and semiconductor device structures formed by the methods
US7754513B2 (en) * 2007-02-28 2010-07-13 International Business Machines Corporation Latch-up resistant semiconductor structures on hybrid substrates and methods for forming such semiconductor structures
US7818702B2 (en) * 2007-02-28 2010-10-19 International Business Machines Corporation Structure incorporating latch-up resistant semiconductor device structures on hybrid substrates
US20090065841A1 (en) * 2007-09-06 2009-03-12 Assaf Shappir SILICON OXY-NITRIDE (SiON) LINER, SUCH AS OPTIONALLY FOR NON-VOLATILE MEMORY CELLS
TWI346375B (en) * 2007-09-12 2011-08-01 Nanya Technology Corp Method of fabricating a semiconductor device
US8115254B2 (en) * 2007-09-25 2012-02-14 International Business Machines Corporation Semiconductor-on-insulator structures including a trench containing an insulator stressor plug and method of fabricating same
US8492846B2 (en) 2007-11-15 2013-07-23 International Business Machines Corporation Stress-generating shallow trench isolation structure having dual composition
US7824948B2 (en) * 2009-01-21 2010-11-02 Taiwan Semiconductor Manufacturing Company, Ltd. Method and structure for reducing cross-talk in image sensor devices
JP5465907B2 (ja) * 2009-03-27 2014-04-09 ラピスセミコンダクタ株式会社 半導体装置
JP5558243B2 (ja) * 2010-07-21 2014-07-23 パナソニック株式会社 半導体装置
KR102274182B1 (ko) * 2014-08-01 2021-07-06 삼성전자주식회사 반도체 장치와 이를 위한 제조 방법
JP6316725B2 (ja) * 2014-10-03 2018-04-25 ルネサスエレクトロニクス株式会社 半導体装置
JP6783703B2 (ja) * 2017-05-29 2020-11-11 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
EP3654861A4 (fr) 2017-07-21 2021-07-21 National Taiwan University Hospital Système auxiliaire comportant un dispositif d'échappement pour chirurgie

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Also Published As

Publication number Publication date
US20070032001A1 (en) 2007-02-08
US20050101091A1 (en) 2005-05-12
US20030119245A1 (en) 2003-06-26
US7183167B2 (en) 2007-02-27
US6875663B2 (en) 2005-04-05
FR2834125A1 (fr) 2003-06-27
KR100487045B1 (ko) 2005-05-03
US7494883B2 (en) 2009-02-24
TW552715B (en) 2003-09-11
JP2003188250A (ja) 2003-07-04
KR20030052236A (ko) 2003-06-26
JP4139105B2 (ja) 2008-08-27

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