FR2800199B1 - Fabrication de memoire dram - Google Patents

Fabrication de memoire dram

Info

Publication number
FR2800199B1
FR2800199B1 FR9913379A FR9913379A FR2800199B1 FR 2800199 B1 FR2800199 B1 FR 2800199B1 FR 9913379 A FR9913379 A FR 9913379A FR 9913379 A FR9913379 A FR 9913379A FR 2800199 B1 FR2800199 B1 FR 2800199B1
Authority
FR
France
Prior art keywords
dram memory
memory manufacture
manufacture
dram
memory
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR9913379A
Other languages
English (en)
Other versions
FR2800199A1 (fr
Inventor
Jerome Ciavatti
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics SA
Original Assignee
STMicroelectronics SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by STMicroelectronics SA filed Critical STMicroelectronics SA
Priority to FR9913379A priority Critical patent/FR2800199B1/fr
Publication of FR2800199A1 publication Critical patent/FR2800199A1/fr
Application granted granted Critical
Publication of FR2800199B1 publication Critical patent/FR2800199B1/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/03—Making the capacitor or connections thereto
    • H10B12/033—Making the capacitor or connections thereto the capacitor extending over the transistor

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Memories (AREA)
FR9913379A 1999-10-21 1999-10-21 Fabrication de memoire dram Expired - Fee Related FR2800199B1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR9913379A FR2800199B1 (fr) 1999-10-21 1999-10-21 Fabrication de memoire dram

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR9913379A FR2800199B1 (fr) 1999-10-21 1999-10-21 Fabrication de memoire dram

Publications (2)

Publication Number Publication Date
FR2800199A1 FR2800199A1 (fr) 2001-04-27
FR2800199B1 true FR2800199B1 (fr) 2002-03-01

Family

ID=9551376

Family Applications (1)

Application Number Title Priority Date Filing Date
FR9913379A Expired - Fee Related FR2800199B1 (fr) 1999-10-21 1999-10-21 Fabrication de memoire dram

Country Status (1)

Country Link
FR (1) FR2800199B1 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1610969B (zh) * 2001-11-07 2010-04-28 微米技术有限公司 外围晶体管的金属化触点形成方法

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2824423B1 (fr) 2001-05-02 2003-09-05 St Microelectronics Sa Procede de fabrication d'un composant tel qu'une capacite dans un circuit integre et composant de circuit integre
FR2828766B1 (fr) * 2001-08-16 2004-01-16 St Microelectronics Sa Circuit integre comprenant des elements actifs et au moins un element passif, notamment des cellules memoire dram et procede de fabrication
WO2008087499A1 (fr) * 2007-01-17 2008-07-24 Stmicroelectronics Crolles 2 Sas Procédé de fabrication de condensateurs de mémoire vive dynamique (dram) et dispositif correspondant

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3623834B2 (ja) * 1995-01-31 2005-02-23 富士通株式会社 半導体記憶装置及びその製造方法
ATE223108T1 (de) * 1995-04-24 2002-09-15 Infineon Technologies Ag Halbleiter-speichervorrichtung unter verwendung eines ferroelektrischen dielektrikums und verfahren zur herstellung
JPH1050956A (ja) * 1996-08-01 1998-02-20 Hitachi Ltd 半導体集積回路装置の製造方法
JPH1079478A (ja) * 1996-09-04 1998-03-24 Hitachi Ltd ダイナミックｒａｍ装置及びその製造方法
TW410402B (en) * 1998-02-06 2000-11-01 Sony Corp Dielectric capacitor and method of manufacturing same, and dielectric memeory using same
US5918120A (en) * 1998-07-24 1999-06-29 Taiwan Semiconductor Manufacturing Company, Ltd. Method for fabricating capacitor-over-bit line (COB) dynamic random access memory (DRAM) using tungsten landing plug contacts and Ti/TiN bit lines

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1610969B (zh) * 2001-11-07 2010-04-28 微米技术有限公司 外围晶体管的金属化触点形成方法

Also Published As

Publication number Publication date
FR2800199A1 (fr) 2001-04-27

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Legal Events

Date Code Title Description
ST Notification of lapse