FR2848724B1 - Connexions enterrees dans un substrat de circuit integre - Google Patents

Connexions enterrees dans un substrat de circuit integre

Info

Publication number
FR2848724B1
FR2848724B1 FR0215837A FR0215837A FR2848724B1 FR 2848724 B1 FR2848724 B1 FR 2848724B1 FR 0215837 A FR0215837 A FR 0215837A FR 0215837 A FR0215837 A FR 0215837A FR 2848724 B1 FR2848724 B1 FR 2848724B1
Authority
FR
France
Prior art keywords
integrated circuit
circuit substrate
bonded connections
connections
bonded
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR0215837A
Other languages
English (en)
Other versions
FR2848724A1 (fr
Inventor
Michel Marty
Francois Leverd
Philippe Coronel
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics SA
Original Assignee
STMicroelectronics SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by STMicroelectronics SA filed Critical STMicroelectronics SA
Priority to FR0215837A priority Critical patent/FR2848724B1/fr
Priority to US10/735,518 priority patent/US20040145058A1/en
Publication of FR2848724A1 publication Critical patent/FR2848724A1/fr
Application granted granted Critical
Publication of FR2848724B1 publication Critical patent/FR2848724B1/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76264—SOI together with lateral isolation, e.g. using local oxidation of silicon, or dielectric or polycristalline material refilled trench or air gap isolation regions, e.g. completely isolated semiconductor islands
    • H01L21/76283—Lateral isolation by refilling of trenches with dielectric material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76898—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics formed through a semiconductor substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/84—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being other than a semiconductor body, e.g. being an insulating body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/481—Internal lead connections, e.g. via connections, feedthrough structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1203—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body the substrate comprising an insulating body on a semiconductor body, e.g. SOI
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
FR0215837A 2002-12-13 2002-12-13 Connexions enterrees dans un substrat de circuit integre Expired - Fee Related FR2848724B1 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
FR0215837A FR2848724B1 (fr) 2002-12-13 2002-12-13 Connexions enterrees dans un substrat de circuit integre
US10/735,518 US20040145058A1 (en) 2002-12-13 2003-12-12 Buried connections in an integrated circuit substrate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR0215837A FR2848724B1 (fr) 2002-12-13 2002-12-13 Connexions enterrees dans un substrat de circuit integre

Publications (2)

Publication Number Publication Date
FR2848724A1 FR2848724A1 (fr) 2004-06-18
FR2848724B1 true FR2848724B1 (fr) 2005-04-15

Family

ID=32338777

Family Applications (1)

Application Number Title Priority Date Filing Date
FR0215837A Expired - Fee Related FR2848724B1 (fr) 2002-12-13 2002-12-13 Connexions enterrees dans un substrat de circuit integre

Country Status (2)

Country Link
US (1) US20040145058A1 (fr)
FR (1) FR2848724B1 (fr)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1790005A1 (fr) * 2004-09-02 2007-05-30 Koninklijke Philips Electronics N.V. Mise en contact avec des structures d'isolation par tranchee profonde et remplissage de celles-ci avec du tungstene
US7285477B1 (en) * 2006-05-16 2007-10-23 International Business Machines Corporation Dual wired integrated circuit chips
EP1873822A1 (fr) * 2006-06-27 2008-01-02 STMicroelectronics S.r.l. Contact avant-arrière de dispositifs électroniques avec défauts induits pour améliorer la conductivité
FR2910704A1 (fr) * 2007-04-05 2008-06-27 Commissariat Energie Atomique Procede de realisation d'un dispositif a circuit integre interconnecte
EP3373329B1 (fr) 2014-02-28 2023-04-05 LFoundry S.r.l. Circuit integré comprenant un transistor mos a diffusion laterale
US9515181B2 (en) 2014-08-06 2016-12-06 Qualcomm Incorporated Semiconductor device with self-aligned back side features
CN108054157B (zh) * 2017-12-15 2021-01-12 浙江清华柔性电子技术研究院 用于系统级封装的tsv转接板
CN108010853B (zh) * 2017-12-15 2021-06-22 西安科锐盛创新科技有限公司 基于硅通孔的转接板及其制备方法
US10685947B2 (en) 2018-01-12 2020-06-16 Intel Corporation Distributed semiconductor die and package architecture
US11404270B2 (en) * 2018-11-30 2022-08-02 Texas Instruments Incorporated Microelectronic device substrate formed by additive process
US10861715B2 (en) 2018-12-28 2020-12-08 Texas Instruments Incorporated 3D printed semiconductor package
US10910465B2 (en) 2018-12-28 2021-02-02 Texas Instruments Incorporated 3D printed semiconductor package

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US64553A (en) * 1867-05-07 moohe
US615A (en) * 1838-02-22 Machine for washing bags in the manufacture of paper
US5091331A (en) * 1990-04-16 1992-02-25 Harris Corporation Ultra-thin circuit fabrication by controlled wafer debonding
US5621239A (en) * 1990-11-05 1997-04-15 Fujitsu Limited SOI device having a buried layer of reduced resistivity
US5426072A (en) * 1993-01-21 1995-06-20 Hughes Aircraft Company Process of manufacturing a three dimensional integrated circuit from stacked SOI wafers using a temporary silicon substrate
US5670387A (en) * 1995-01-03 1997-09-23 Motorola, Inc. Process for forming semiconductor-on-insulator device
US5776789A (en) * 1995-06-05 1998-07-07 Fujitsu Limited Method for fabricating a semiconductor memory device
US5807783A (en) * 1996-10-07 1998-09-15 Harris Corporation Surface mount die by handle replacement
US6291858B1 (en) * 2000-01-03 2001-09-18 International Business Machines Corporation Multistack 3-dimensional high density semiconductor device and method for fabrication
JP2003110108A (ja) * 2001-09-28 2003-04-11 Mitsubishi Electric Corp 半導体装置の製造方法及びその構造

Also Published As

Publication number Publication date
US20040145058A1 (en) 2004-07-29
FR2848724A1 (fr) 2004-06-18

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Legal Events

Date Code Title Description
ST Notification of lapse

Effective date: 20070831