DE69408772D1 - Halbleitervorrichtung mit schnellen lateralem DMOST mit Hochspannungs-Sourceelektrode - Google Patents

Halbleitervorrichtung mit schnellen lateralem DMOST mit Hochspannungs-Sourceelektrode

Info

Publication number
DE69408772D1
DE69408772D1 DE69408772T DE69408772T DE69408772D1 DE 69408772 D1 DE69408772 D1 DE 69408772D1 DE 69408772 T DE69408772 T DE 69408772T DE 69408772 T DE69408772 T DE 69408772T DE 69408772 D1 DE69408772 D1 DE 69408772D1
Authority
DE
Germany
Prior art keywords
semiconductor device
high voltage
source electrode
voltage source
fast lateral
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69408772T
Other languages
English (en)
Other versions
DE69408772T2 (de
Inventor
Adrianus Willem Ludikhuize
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NXP BV
Original Assignee
Philips Electronics NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Electronics NV filed Critical Philips Electronics NV
Publication of DE69408772D1 publication Critical patent/DE69408772D1/de
Application granted granted Critical
Publication of DE69408772T2 publication Critical patent/DE69408772T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7816—Lateral DMOS transistors, i.e. LDMOS transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
    • H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
    • H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
    • H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
    • H01L29/0619—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE] with a supplementary region doped oppositely to or in rectifying contact with the semiconductor containing or contacting region, e.g. guard rings with PN or Schottky junction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
    • H01L29/0692—Surface layout
    • H01L29/0696—Surface layout of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
DE69408772T 1993-10-14 1994-10-07 Halbleitervorrichtung mit schnellen lateralem DMOST mit Hochspannungs-Sourceelektrode Expired - Lifetime DE69408772T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
BE9301086A BE1007657A3 (nl) 1993-10-14 1993-10-14 Halfgeleiderinrichting met een snelle laterale dmost voorzien van een hoogspanningsaanvoerelektrode.

Publications (2)

Publication Number Publication Date
DE69408772D1 true DE69408772D1 (de) 1998-04-09
DE69408772T2 DE69408772T2 (de) 1998-08-27

Family

ID=3887426

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69408772T Expired - Lifetime DE69408772T2 (de) 1993-10-14 1994-10-07 Halbleitervorrichtung mit schnellen lateralem DMOST mit Hochspannungs-Sourceelektrode

Country Status (6)

Country Link
US (1) US5610432A (de)
EP (1) EP0649177B1 (de)
JP (1) JP4014659B2 (de)
KR (1) KR100313287B1 (de)
BE (1) BE1007657A3 (de)
DE (1) DE69408772T2 (de)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0811242A1 (de) * 1995-12-21 1997-12-10 Koninklijke Philips Electronics N.V. Herstellungsverfahren von einer resurf halbleitervorrichtung und so hergestellte halbleitervorrichtung
WO1998053505A2 (en) * 1997-05-23 1998-11-26 Koninklijke Philips Electronics N.V. Lateral mos semiconductor device
JP3628613B2 (ja) * 1997-11-03 2005-03-16 インフィネオン テクノロジース アクチエンゲゼルシャフト 半導体構成素子のための耐高圧縁部構造
KR100362531B1 (ko) * 2000-10-09 2002-11-29 한국신발피혁연구소 내변색을 개선시키는 앨범용 라텍스 점착제 조성물
US6448625B1 (en) * 2001-03-16 2002-09-10 Semiconductor Components Industries Llc High voltage metal oxide device with enhanced well region
KR100447073B1 (ko) * 2001-11-29 2004-09-04 서석홍 유색점착제 제조방법
KR20030050359A (ko) * 2001-12-18 2003-06-25 박명원 발열중합반응을 이용한 유색아크릴수지를 함유한 코팅용점착제의 제조방법 및 그 방법에 의해 제조된 점착제
KR100538776B1 (ko) * 2002-05-29 2005-12-23 서석홍 점착제 제조방법
JP4791113B2 (ja) * 2005-09-12 2011-10-12 オンセミコンダクター・トレーディング・リミテッド 半導体装置
US8174051B2 (en) * 2007-06-26 2012-05-08 International Rectifier Corporation III-nitride power device
KR20160088962A (ko) * 2013-11-27 2016-07-27 르네사스 일렉트로닉스 가부시키가이샤 반도체 장치

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5645074A (en) * 1979-09-20 1981-04-24 Nippon Telegr & Teleph Corp <Ntt> High-pressure-resistance mos type semiconductor device
NL8401983A (nl) * 1984-06-22 1986-01-16 Philips Nv Halfgeleiderinrichting met verhoogde doorslagspanning.
GB2173037A (en) * 1985-03-29 1986-10-01 Philips Electronic Associated Semiconductor devices employing conductivity modulation
US5034790A (en) * 1989-05-23 1991-07-23 U.S. Philips Corp. MOS transistor with semi-insulating field plate and surface-adjoining top layer
EP0571027A1 (de) * 1992-05-21 1993-11-24 Koninklijke Philips Electronics N.V. Halbleiteranordnung, die einen lateralen DMOS-Transistor mit die Durchbruchspannung anhebenden Zonen und Vorkehrungen für den Ladungsaustausch mit dem Backgate-Gebiet enthält
TW218424B (de) * 1992-05-21 1994-01-01 Philips Nv

Also Published As

Publication number Publication date
EP0649177B1 (de) 1998-03-04
JP4014659B2 (ja) 2007-11-28
BE1007657A3 (nl) 1995-09-05
KR100313287B1 (ko) 2002-08-09
JPH07176744A (ja) 1995-07-14
US5610432A (en) 1997-03-11
DE69408772T2 (de) 1998-08-27
KR950012769A (ko) 1995-05-17
EP0649177A1 (de) 1995-04-19

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: KONINKLIJKE PHILIPS ELECTRONICS N.V., EINDHOVEN, N

8320 Willingness to grant licences declared (paragraph 23)
8328 Change in the person/name/address of the agent

Representative=s name: EISENFUEHR, SPEISER & PARTNER, 10178 BERLIN

8327 Change in the person/name/address of the patent owner

Owner name: NXP B.V., EINDHOVEN, NL