DE69215425D1 - Halbleitervorrichtung zum Erzeugen von konstanter Spannung - Google Patents

Halbleitervorrichtung zum Erzeugen von konstanter Spannung

Info

Publication number
DE69215425D1
DE69215425D1 DE69215425T DE69215425T DE69215425D1 DE 69215425 D1 DE69215425 D1 DE 69215425D1 DE 69215425 T DE69215425 T DE 69215425T DE 69215425 T DE69215425 T DE 69215425T DE 69215425 D1 DE69215425 D1 DE 69215425D1
Authority
DE
Germany
Prior art keywords
semiconductor device
constant voltage
generating constant
generating
voltage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69215425T
Other languages
English (en)
Other versions
DE69215425T2 (de
Inventor
Masaru Koyanagi
Tsuyoshi Etoh
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Toshiba Electronic Device Solutions Corp
Original Assignee
Toshiba Corp
Toshiba Microelectronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Toshiba Microelectronics Corp filed Critical Toshiba Corp
Application granted granted Critical
Publication of DE69215425D1 publication Critical patent/DE69215425D1/de
Publication of DE69215425T2 publication Critical patent/DE69215425T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is dc
    • G05F3/10—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/24—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/12—Bit line control circuits, e.g. drivers, boosters, pull-up circuits, pull-down circuits, precharging circuits, equalising circuits, for bit lines

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Automation & Control Theory (AREA)
  • Power Engineering (AREA)
  • Logic Circuits (AREA)
  • Dram (AREA)
  • Read Only Memory (AREA)
  • Static Random-Access Memory (AREA)
DE69215425T 1991-04-30 1992-04-30 Halbleitervorrichtung zum Erzeugen von konstanter Spannung Expired - Fee Related DE69215425T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9922491A JP2647276B2 (ja) 1991-04-30 1991-04-30 定電位発生用半導体装置

Publications (2)

Publication Number Publication Date
DE69215425D1 true DE69215425D1 (de) 1997-01-09
DE69215425T2 DE69215425T2 (de) 1997-04-24

Family

ID=14241696

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69215425T Expired - Fee Related DE69215425T2 (de) 1991-04-30 1992-04-30 Halbleitervorrichtung zum Erzeugen von konstanter Spannung

Country Status (5)

Country Link
US (1) US5319256A (de)
EP (1) EP0511675B1 (de)
JP (1) JP2647276B2 (de)
KR (1) KR950006961B1 (de)
DE (1) DE69215425T2 (de)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2724025B1 (fr) * 1994-08-31 1997-01-03 Sgs Thomson Microelectronics Circuit integre avec fonction de demarrage rapide de sources de tension ou courant de reference
GB9423034D0 (en) * 1994-11-15 1995-01-04 Sgs Thomson Microelectronics A reference circuit
US5534789A (en) * 1995-08-07 1996-07-09 Etron Technology, Inc. Mixed mode output buffer circuit for CMOSIC
WO2001046768A1 (en) * 1999-12-21 2001-06-28 Koninklijke Philips Electronics N.V. Voltage regulator provided with a current limiter
JP4291295B2 (ja) * 2005-04-08 2009-07-08 エルピーダメモリ株式会社 論理回路

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0666670B2 (ja) * 1983-01-08 1994-08-24 三菱電機株式会社 相補型ｍｏｓアナログスイッチ
JPS61163655A (ja) * 1985-01-14 1986-07-24 Toshiba Corp 相補型半導体集積回路
US4663584B1 (en) * 1985-06-10 1996-05-21 Toshiba Kk Intermediate potential generation circuit
JPH083766B2 (ja) * 1986-05-31 1996-01-17 株式会社東芝 半導体集積回路の電源電圧降下回路
JP2752640B2 (ja) * 1988-08-07 1998-05-18 日本電気アイシーマイコンシステム株式会社 中間レベル発生回路

Also Published As

Publication number Publication date
KR920020709A (ko) 1992-11-21
US5319256A (en) 1994-06-07
DE69215425T2 (de) 1997-04-24
KR950006961B1 (ko) 1995-06-26
EP0511675A2 (de) 1992-11-04
JPH04328397A (ja) 1992-11-17
EP0511675A3 (en) 1993-08-25
EP0511675B1 (de) 1996-11-27
JP2647276B2 (ja) 1997-08-27

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee