JP5069851B2 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP5069851B2 JP5069851B2 JP2005277035A JP2005277035A JP5069851B2 JP 5069851 B2 JP5069851 B2 JP 5069851B2 JP 2005277035 A JP2005277035 A JP 2005277035A JP 2005277035 A JP2005277035 A JP 2005277035A JP 5069851 B2 JP5069851 B2 JP 5069851B2
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- Prior art keywords
- single crystal
- insulating film
- semiconductor device
- trench
- substrate
- Prior art date
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- 239000004065 semiconductor Substances 0.000 title claims description 77
- 239000000758 substrate Substances 0.000 claims description 51
- 239000013078 crystal Substances 0.000 claims description 39
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 30
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 24
- 238000009792 diffusion process Methods 0.000 claims description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 8
- 229910052710 silicon Inorganic materials 0.000 claims description 8
- 239000010703 silicon Substances 0.000 claims description 8
- 239000012212 insulator Substances 0.000 claims description 2
- 239000012528 membrane Substances 0.000 claims 1
- 239000010408 film Substances 0.000 description 81
- 238000000034 method Methods 0.000 description 34
- 238000002955 isolation Methods 0.000 description 22
- 238000004519 manufacturing process Methods 0.000 description 15
- 238000005530 etching Methods 0.000 description 14
- 238000000206 photolithography Methods 0.000 description 13
- 238000000926 separation method Methods 0.000 description 12
- 238000005452 bending Methods 0.000 description 8
- 238000001312 dry etching Methods 0.000 description 8
- 235000012431 wafers Nutrition 0.000 description 8
- 230000003647 oxidation Effects 0.000 description 6
- 238000007254 oxidation reaction Methods 0.000 description 6
- 229910004298 SiO 2 Inorganic materials 0.000 description 5
- 238000000227 grinding Methods 0.000 description 5
- 238000010438 heat treatment Methods 0.000 description 5
- 238000000059 patterning Methods 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 4
- 230000015556 catabolic process Effects 0.000 description 4
- 230000007547 defect Effects 0.000 description 4
- 238000005498 polishing Methods 0.000 description 4
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 3
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000001039 wet etching Methods 0.000 description 3
- 238000013461 design Methods 0.000 description 2
- 239000003989 dielectric material Substances 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000001947 vapour-phase growth Methods 0.000 description 1
Images
Landscapes
- Element Separation (AREA)
- Electrodes Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Thin Film Transistor (AREA)
Description
Claims (3)
- 単結晶シリコンである支持体基板に絶縁膜を介して別の単結晶シリコンを貼り合わせ、前記支持体基板の上に前記絶縁膜を介して複数の単結晶島を配置したSOI基板(Silicon on Insulator)に電力半導体素子を形成した半導体装置において、前記複数の単結晶島の周囲が閉ループパターンのトレンチで囲まれており、
前記単結晶島の表面及びトレンチの内壁を被覆する絶縁膜が形成され、
該トレンチの内部が、前記絶縁膜と、該絶縁膜で挟まれた多結晶シリコン膜とによって埋め込まれ、埋め込まれた前記多結晶シリコン膜の表面は前記単結晶島の表面に形成された前記絶縁膜と同じ面になって露出し、
前記単結晶島の表面に形成された前記絶縁膜の除去部に半導体素子領域が作製されることを特徴とする半導体装置。 - 請求項1に記載の半導体装置において、前記電力半導体素子を形成した単結晶島の、前記トレンチ内壁を被覆する絶縁膜に接する部分と前記支持体基板の絶縁膜に接する部分とに、高濃度の拡散層が形成されていることを特徴とする半導体装置。
- 請求項1に記載の半導体装置において、SOI基板の表面に形成されたトレンチの閉ループパターンが、直線部分から続くコーナー部を円弧状にしていることを特徴とする半導体装置。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005277035A JP5069851B2 (ja) | 2005-09-26 | 2005-09-26 | 半導体装置 |
CNB2006101106973A CN100511689C (zh) | 2005-09-26 | 2006-08-08 | 半导体器件 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005277035A JP5069851B2 (ja) | 2005-09-26 | 2005-09-26 | 半導体装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2007088312A JP2007088312A (ja) | 2007-04-05 |
JP5069851B2 true JP5069851B2 (ja) | 2012-11-07 |
Family
ID=37959351
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2005277035A Active JP5069851B2 (ja) | 2005-09-26 | 2005-09-26 | 半導体装置 |
Country Status (2)
Country | Link |
---|---|
JP (1) | JP5069851B2 (ja) |
CN (1) | CN100511689C (ja) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2009004534A (ja) | 2007-06-21 | 2009-01-08 | Hitachi Ltd | 半導体装置及びその製造方法 |
JP5571283B2 (ja) * | 2007-12-25 | 2014-08-13 | ローム株式会社 | 半導体装置 |
CN102627252B (zh) * | 2012-04-19 | 2014-12-10 | 西北工业大学 | 用于沟道填充的新型沟道隔离槽 |
JP2013235963A (ja) * | 2012-05-09 | 2013-11-21 | Panasonic Corp | 半導体装置 |
JP6198337B2 (ja) * | 2014-06-25 | 2017-09-20 | ローム株式会社 | 半導体装置 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0669086B2 (ja) * | 1983-03-29 | 1994-08-31 | 株式会社日立製作所 | 半導体装置 |
JP2896141B2 (ja) * | 1987-02-26 | 1999-05-31 | 株式会社東芝 | 高耐圧半導体素子 |
JPH0346346A (ja) * | 1989-07-14 | 1991-02-27 | Hitachi Ltd | 半導体集積回路装置 |
JP3189456B2 (ja) * | 1992-03-09 | 2001-07-16 | 富士電機株式会社 | Soi半導体装置 |
JP2833394B2 (ja) * | 1992-12-25 | 1998-12-09 | 株式会社デンソー | 高耐圧半導体装置 |
JPH1093097A (ja) * | 1996-09-17 | 1998-04-10 | Toshiba Corp | 高耐圧半導体装置及びプラズマディスプレイパネル |
EP1083607A3 (en) * | 1999-08-31 | 2005-09-21 | Matsushita Electric Industrial Co., Ltd. | High voltage SOI semiconductor device |
JP4654574B2 (ja) * | 2003-10-20 | 2011-03-23 | トヨタ自動車株式会社 | 半導体装置 |
-
2005
- 2005-09-26 JP JP2005277035A patent/JP5069851B2/ja active Active
-
2006
- 2006-08-08 CN CNB2006101106973A patent/CN100511689C/zh active Active
Also Published As
Publication number | Publication date |
---|---|
CN100511689C (zh) | 2009-07-08 |
CN1941386A (zh) | 2007-04-04 |
JP2007088312A (ja) | 2007-04-05 |
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