IT8119502A0 - Dispositivo semiconduttore ad alta tensione di scarica. - Google Patents

Dispositivo semiconduttore ad alta tensione di scarica.

Info

Publication number
IT8119502A0
IT8119502A0 IT8119502A IT1950281A IT8119502A0 IT 8119502 A0 IT8119502 A0 IT 8119502A0 IT 8119502 A IT8119502 A IT 8119502A IT 1950281 A IT1950281 A IT 1950281A IT 8119502 A0 IT8119502 A0 IT 8119502A0
Authority
IT
Italy
Prior art keywords
semiconductor device
discharge voltage
high discharge
voltage semiconductor
voltage
Prior art date
Application number
IT8119502A
Other languages
English (en)
Other versions
IT1135292B (it
Inventor
Ichiro Imaizumi
Masatoshi Kimura
Shikayuki Ochi
Masayoshi Yoshimura
Takashi Yamaguchi
Toyomasa Koda
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Publication of IT8119502A0 publication Critical patent/IT8119502A0/it
Application granted granted Critical
Publication of IT1135292B publication Critical patent/IT1135292B/it

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/402—Field plates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/0821—Collector regions of bipolar transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/8605—Resistors with PN junctions
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02B—BOARDS, SUBSTATIONS OR SWITCHING ARRANGEMENTS FOR THE SUPPLY OR DISTRIBUTION OF ELECTRIC POWER
    • H02B13/00—Arrangement of switchgear in which switches are enclosed in, or structurally associated with, a casing, e.g. cubicle
    • H02B13/02—Arrangement of switchgear in which switches are enclosed in, or structurally associated with, a casing, e.g. cubicle with metal casing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S257/00—Active solid-state devices, e.g. transistors, solid-state diodes
    • Y10S257/913—Active solid-state devices, e.g. transistors, solid-state diodes with means to absorb or localize unwanted impurities or defects from semiconductors, e.g. heavy metal gettering

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
IT19502/81A 1980-02-04 1981-02-04 Dispositivo semiconduttore ad alta tensione di scarica IT1135292B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55011506A JPS5852347B2 (ja) 1980-02-04 1980-02-04 高耐圧半導体装置

Publications (2)

Publication Number Publication Date
IT8119502A0 true IT8119502A0 (it) 1981-02-04
IT1135292B IT1135292B (it) 1986-08-20

Family

ID=11779899

Family Applications (1)

Application Number Title Priority Date Filing Date
IT19502/81A IT1135292B (it) 1980-02-04 1981-02-04 Dispositivo semiconduttore ad alta tensione di scarica

Country Status (4)

Country Link
US (1) US4443812A (it)
JP (1) JPS5852347B2 (it)
DE (1) DE3103785A1 (it)
IT (1) IT1135292B (it)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0087155B1 (en) * 1982-02-22 1991-05-29 Kabushiki Kaisha Toshiba Means for preventing the breakdown of an insulation layer in semiconductor devices
JPH0618251B2 (ja) * 1983-02-23 1994-03-09 株式会社東芝 半導体装置
JPS6064337U (ja) * 1983-10-12 1985-05-07 東海ゴム工業株式会社 車両懸架装置におけるダストカバ−付アツパサポ−ト
JPS6097434U (ja) * 1983-12-09 1985-07-03 株式会社昭和製作所 緩衝器用ダストブ−ツの取付構造
JPS6144454A (ja) * 1984-08-09 1986-03-04 Fujitsu Ltd 半導体装置
NL8403111A (nl) * 1984-10-12 1986-05-01 Philips Nv Werkwijze ter vervaardiging van een bipolaire transistor met emitterserieweerstanden, en transistor vervaardigd volgens de werkwijze.
DE4137101A1 (de) * 1991-02-28 1992-09-03 Daimler Benz Ag Laterales halbleiterbauelement
EP0571695A1 (en) * 1992-05-28 1993-12-01 Consorzio per la Ricerca sulla Microelettronica nel Mezzogiorno - CoRiMMe High voltage resistor integrated on a semiconductor substrate
SE9901575L (sv) * 1999-05-03 2000-11-04 Eklund Klas Haakan Halvledarelement

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3534231A (en) * 1968-02-15 1970-10-13 Texas Instruments Inc Low bulk leakage current avalanche photodiode
US3961358A (en) * 1973-02-21 1976-06-01 Rca Corporation Leakage current prevention in semiconductor integrated circuit devices
US4161742A (en) * 1975-08-02 1979-07-17 Ferranti Limited Semiconductor devices with matched resistor portions
IT1111981B (it) * 1979-02-13 1986-01-13 Ates Componenti Elettron Struttura di transistore v(br)ceo protetto per il caso di inversione delle polarita' di alimentazione e prodotto risultante

Also Published As

Publication number Publication date
DE3103785A1 (de) 1981-12-03
JPS5852347B2 (ja) 1983-11-22
JPS56110251A (en) 1981-09-01
DE3103785C2 (it) 1988-06-23
IT1135292B (it) 1986-08-20
US4443812A (en) 1984-04-17

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