TW289158B - - Google Patents

Info

Publication number
TW289158B
TW289158B TW084105844A TW84105844A TW289158B TW 289158 B TW289158 B TW 289158B TW 084105844 A TW084105844 A TW 084105844A TW 84105844 A TW84105844 A TW 84105844A TW 289158 B TW289158 B TW 289158B
Authority
TW
Taiwan
Application number
TW084105844A
Original Assignee
Texas Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Texas Instruments Inc filed Critical Texas Instruments Inc
Application granted granted Critical
Publication of TW289158B publication Critical patent/TW289158B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
    • H01L27/0922—Combination of complementary transistors having a different structure, e.g. stacked CMOS, high-voltage and low-voltage CMOS

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
TW084105844A 1994-04-08 1995-06-09 TW289158B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US08/224,948 US5498554A (en) 1994-04-08 1994-04-08 Method of making extended drain resurf lateral DMOS devices

Publications (1)

Publication Number Publication Date
TW289158B true TW289158B (zh) 1996-10-21

Family

ID=22842891

Family Applications (1)

Application Number Title Priority Date Filing Date
TW084105844A TW289158B (zh) 1994-04-08 1995-06-09

Country Status (5)

Country Link
US (3) US5498554A (zh)
EP (1) EP0677876B1 (zh)
JP (1) JPH07307394A (zh)
DE (1) DE69525188T2 (zh)
TW (1) TW289158B (zh)

Families Citing this family (73)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6242787B1 (en) 1995-11-15 2001-06-05 Denso Corporation Semiconductor device and manufacturing method thereof
US6831331B2 (en) 1995-11-15 2004-12-14 Denso Corporation Power MOS transistor for absorbing surge current
US5547894A (en) * 1995-12-21 1996-08-20 International Business Machines Corporation CMOS processing with low and high-current FETs
US5753956A (en) * 1996-01-11 1998-05-19 Micron Technology, Inc. Semiconductor processing methods of forming complementary metal oxide semiconductor memory and other circuitry, and memory and other circuitry
US5880502A (en) * 1996-09-06 1999-03-09 Micron Display Technology, Inc. Low and high voltage CMOS devices and process for fabricating same
US5728607A (en) * 1996-11-20 1998-03-17 Lucent Technologies Inc. Method of making a P-channel bipolar transistor
US6110804A (en) * 1996-12-02 2000-08-29 Semiconductor Components Industries, Llc Method of fabricating a semiconductor device having a floating field conductor
JPH10189762A (ja) * 1996-12-20 1998-07-21 Nec Corp 半導体装置およびその製造方法
KR100220252B1 (ko) * 1996-12-28 1999-09-15 김영환 반도체 소자의 제조방법
US6160290A (en) * 1997-11-25 2000-12-12 Texas Instruments Incorporated Reduced surface field device having an extended field plate and method for forming the same
FR2779574B1 (fr) * 1998-06-03 2003-01-31 Sgs Thomson Microelectronics Procede de fabrication de transistors haute et basse tension
JP2000022142A (ja) * 1998-06-29 2000-01-21 Denso Corp 半導体装置及び半導体装置の製造方法
US5976923A (en) * 1998-12-08 1999-11-02 United Microelectronics Corp. Method for fabricating a high-voltage semiconductor device
US6091657A (en) * 1999-01-20 2000-07-18 Lucent Technologies Inc. Integrated circuit having protection of low voltage devices
SE523899C2 (sv) * 1999-04-15 2004-06-01 Ericsson Telefon Ab L M Halvledaranordning
US6365932B1 (en) 1999-08-20 2002-04-02 Denso Corporation Power MOS transistor
US6348382B1 (en) 1999-09-09 2002-02-19 Taiwan Semiconductor Manufacturing Company Integration process to increase high voltage breakdown performance
US6297098B1 (en) 1999-11-01 2001-10-02 Taiwan Semiconductor Manufacturing Company Tilt-angle ion implant to improve junction breakdown in flash memory application
KR100336562B1 (ko) * 1999-12-10 2002-05-11 박종섭 모스 형성방법
KR100344810B1 (ko) 2000-07-26 2002-07-20 엘지전자주식회사 고전압소자를 이용한 전류구동회로
US6660603B2 (en) 2000-09-21 2003-12-09 Texas Instruments Incorporated Higher voltage drain extended MOS transistors with self-aligned channel and drain extensions
US7115946B2 (en) * 2000-09-28 2006-10-03 Kabushiki Kaisha Toshiba MOS transistor having an offset region
SE519382C2 (sv) * 2000-11-03 2003-02-25 Ericsson Telefon Ab L M Integrering av självinriktade MOS-högspänningskomponenter samt halvledarstruktur innefattande sådana
US6818494B1 (en) * 2001-03-26 2004-11-16 Hewlett-Packard Development Company, L.P. LDMOS and CMOS integrated circuit and method of making
WO2002095833A1 (en) * 2001-05-15 2002-11-28 Virtual Silicon Technology, Inc. High voltage n-channel ldmos devices built in a deep submicron cmos process
JP4166010B2 (ja) * 2001-12-04 2008-10-15 富士電機デバイステクノロジー株式会社 横型高耐圧ｍｏｓｆｅｔ及びこれを備えた半導体装置
EP1321985B1 (en) * 2001-12-20 2007-10-24 STMicroelectronics S.r.l. Method of integrating metal oxide semiconductor field effect transistors
US6861341B2 (en) * 2002-02-22 2005-03-01 Xerox Corporation Systems and methods for integration of heterogeneous circuit devices
KR100867574B1 (ko) * 2002-05-09 2008-11-10 페어차일드코리아반도체 주식회사 고전압 디바이스 및 그 제조방법
US7667268B2 (en) * 2002-08-14 2010-02-23 Advanced Analogic Technologies, Inc. Isolated transistor
US7825488B2 (en) 2006-05-31 2010-11-02 Advanced Analogic Technologies, Inc. Isolation structures for integrated circuits and modular methods of forming the same
KR100448889B1 (ko) * 2002-11-22 2004-09-18 한국전자통신연구원 에스오아이 기판을 이용한 전력 집적회로용 소자의 제조방법
US7019377B2 (en) * 2002-12-17 2006-03-28 Micrel, Inc. Integrated circuit including high voltage devices and low voltage devices
JP2004228466A (ja) 2003-01-27 2004-08-12 Renesas Technology Corp 集積半導体装置およびその製造方法
US7235451B2 (en) * 2003-03-03 2007-06-26 Texas Instruments Incorporated Drain extended MOS devices with self-aligned floating region and fabrication methods therefor
US6900101B2 (en) * 2003-06-13 2005-05-31 Texas Instruments Incorporated LDMOS transistors and methods for making the same
US6867640B2 (en) 2003-07-01 2005-03-15 Ami Semiconductor, Inc. Double-sided extended drain field effect transistor, and integrated overvoltage and reverse voltage protection circuit that uses the same
JP4198006B2 (ja) * 2003-07-25 2008-12-17 株式会社リコー 半導体装置の製造方法
US7005354B2 (en) * 2003-09-23 2006-02-28 Texas Instruments Incorporated Depletion drain-extended MOS transistors and methods for making the same
US7091535B2 (en) * 2004-03-05 2006-08-15 Taiwan Semiconductor Manufacturing Company High voltage device embedded non-volatile memory cell and fabrication method
US7238986B2 (en) * 2004-05-03 2007-07-03 Texas Instruments Incorporated Robust DEMOS transistors and method for making the same
US7358567B2 (en) * 2004-06-07 2008-04-15 United Microelectronics Corp. High-voltage MOS device and fabrication thereof
JP4959931B2 (ja) * 2004-09-29 2012-06-27 オンセミコンダクター・トレーディング・リミテッド 半導体装置の製造方法
DE102005054672B4 (de) 2005-11-16 2014-06-12 Austriamicrosystems Ag Hochvolt-Transistor mit niedriger Threshold-Spannung und einen solchen Hochvolt-Transistor umfassendes Bauelement
KR100690924B1 (ko) * 2005-12-21 2007-03-09 삼성전자주식회사 반도체 집적 회로 장치와 그 제조 방법
KR100796500B1 (ko) * 2005-12-29 2008-01-21 동부일렉트로닉스 주식회사 고전압 반도체 소자의 방법
US8558349B2 (en) * 2006-08-11 2013-10-15 System General Corp. Integrated circuit for a high-side transistor driver
US20080042221A1 (en) * 2006-08-15 2008-02-21 Liming Tsau High voltage transistor
ITTO20060785A1 (it) * 2006-11-02 2008-05-03 St Microelectronics Srl Dispositivo mos resistente alla radiazione ionizzante
KR100834287B1 (ko) * 2006-12-27 2008-05-30 동부일렉트로닉스 주식회사 횡형 디모스소자 및 그 제조방법
US7781843B1 (en) 2007-01-11 2010-08-24 Hewlett-Packard Development Company, L.P. Integrating high-voltage CMOS devices with low-voltage CMOS
US20080237740A1 (en) * 2007-03-29 2008-10-02 United Microelectronics Corp. Semiconductor device and the manufacturing method thereof
US8168466B2 (en) * 2007-06-01 2012-05-01 Semiconductor Components Industries, Llc Schottky diode and method therefor
US7548365B2 (en) * 2007-06-06 2009-06-16 Texas Instruments Incorporated Semiconductor device and method comprising a high voltage reset driver and an isolated memory array
US7838940B2 (en) 2007-12-04 2010-11-23 Infineon Technologies Ag Drain-extended field effect transistor
US8163621B2 (en) 2008-06-06 2012-04-24 Globalfoundries Singapore Pte. Ltd. High performance LDMOS device having enhanced dielectric strain layer
US8097930B2 (en) * 2008-08-08 2012-01-17 Infineon Technologies Ag Semiconductor devices with trench isolations
US9184097B2 (en) * 2009-03-12 2015-11-10 System General Corporation Semiconductor devices and formation methods thereof
US8643090B2 (en) * 2009-03-23 2014-02-04 Infineon Technologies Ag Semiconductor devices and methods for manufacturing a semiconductor device
US8247280B2 (en) 2009-10-20 2012-08-21 Taiwan Semiconductor Manufacturing Company, Ltd. Integration of low and high voltage CMOS devices
US8575702B2 (en) * 2009-11-27 2013-11-05 Magnachip Semiconductor, Ltd. Semiconductor device and method for fabricating semiconductor device
EP2402998B1 (en) * 2010-07-01 2020-04-08 ams AG Method of producing a p-channel LDMOS transistor
US8664720B2 (en) 2010-08-25 2014-03-04 Infineon Technologies Ag High voltage semiconductor devices
US9214457B2 (en) 2011-09-20 2015-12-15 Alpha & Omega Semiconductor Incorporated Method of integrating high voltage devices
JP5784512B2 (ja) * 2012-01-13 2015-09-24 株式会社東芝 半導体装置
JP2013187263A (ja) * 2012-03-06 2013-09-19 Canon Inc 半導体装置、記録装置及びそれらの製造方法
US9123642B1 (en) 2013-07-22 2015-09-01 Cypress Semiconductor Corporation Method of forming drain extended MOS transistors for high voltage circuits
CN104425489B (zh) * 2013-08-20 2017-03-01 上海华虹宏力半导体制造有限公司 高压器件和低压器件集成结构和集成方法
CN104425370B (zh) * 2013-08-27 2017-10-20 中芯国际集成电路制造(上海)有限公司 一种半导体器件及其制造方法
JP6193771B2 (ja) * 2014-01-28 2017-09-06 ルネサスエレクトロニクス株式会社 半導体装置
DE102014017146A1 (de) * 2014-04-14 2015-10-15 Elmos Semiconductor Aktiengesellschaft Rail-to-Rail-Verpolschutz für den kombinierten Ein-/Ausgang eine integrierten CMOS Schaltkreises auf einem P-Substrat
US10340395B2 (en) * 2017-05-01 2019-07-02 Qualcomm Incorporated Semiconductor variable capacitor using threshold implant region
TWI796237B (zh) * 2021-12-03 2023-03-11 立錡科技股份有限公司 空乏型高壓nmos元件與空乏型低壓nmos元件整合製造方法

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2940954A1 (de) * 1979-10-09 1981-04-23 Nixdorf Computer Ag, 4790 Paderborn Verfahren zur herstellung von hochspannungs-mos-transistoren enthaltenden mos-integrierten schaltkreisen sowie schaltungsanordnung zum schalten von leistungsstromkreisen unter verwendung derartiger hochspannungs-mos-transistoren
US4593458A (en) * 1984-11-02 1986-06-10 General Electric Company Fabrication of integrated circuit with complementary, dielectrically-isolated, high voltage semiconductor devices
JPH01147854A (ja) * 1987-12-04 1989-06-09 Nissan Motor Co Ltd 半導体装置
US5237193A (en) * 1988-06-24 1993-08-17 Siliconix Incorporated Lightly doped drain MOSFET with reduced on-resistance
JPH02237159A (ja) * 1989-03-10 1990-09-19 Toshiba Corp 半導体装置
US5047358A (en) * 1989-03-17 1991-09-10 Delco Electronics Corporation Process for forming high and low voltage CMOS transistors on a single integrated circuit chip
IT1235843B (it) * 1989-06-14 1992-11-03 Sgs Thomson Microelectronics Dispositivo integrato contenente strutture di potenza formate con transistori ldmos complementari, strutture cmos e pnp verticali con aumentata capacita' di supportare un'alta tensione di alimentazione.
US5386136A (en) * 1991-05-06 1995-01-31 Siliconix Incorporated Lightly-doped drain MOSFET with improved breakdown characteristics
US5306652A (en) * 1991-12-30 1994-04-26 Texas Instruments Incorporated Lateral double diffused insulated gate field effect transistor fabrication process
JP2861624B2 (ja) * 1992-05-13 1999-02-24 日本電気株式会社 半導体装置の製造方法
US5328859A (en) * 1993-01-04 1994-07-12 Xerox Corporation Method of making high voltage PNP bipolar transistor in CMOS

Also Published As

Publication number Publication date
EP0677876A1 (en) 1995-10-18
DE69525188D1 (de) 2002-03-14
EP0677876B1 (en) 2002-01-30
US5498554A (en) 1996-03-12
US5501994A (en) 1996-03-26
DE69525188T2 (de) 2002-08-22
US5747850A (en) 1998-05-05
JPH07307394A (ja) 1995-11-21

Similar Documents

Publication Publication Date Title
TW289158B (zh)
TW278173B (zh)
DK105996A (zh)
IN192665B (zh)
DK0677466T3 (zh)
EP0666525A3 (zh)
EP0669395A3 (zh)
TW282499B (zh)
EP0665261A3 (zh)
EP0667387A3 (zh)
IN191014B (zh)
EP0667627A3 (zh)
TW276190B (zh)
ITMI952407A0 (zh)
DK0685247T3 (zh)
FR2725804B1 (zh)
ECSMU940035U (zh)
EP0662420A3 (zh)
ECSDI940180S (zh)
ECSDI940183S (zh)
ECSDI940190S (zh)
ECSDI940191S (zh)
ECSDI940192S (zh)
ECSDI940198S (zh)
ECSDI940213S (zh)

Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees