FR2766616B1 - Procede de fabrication de microstructures metalliques - Google Patents

Procede de fabrication de microstructures metalliques

Info

Publication number
FR2766616B1
FR2766616B1 FR9809474A FR9809474A FR2766616B1 FR 2766616 B1 FR2766616 B1 FR 2766616B1 FR 9809474 A FR9809474 A FR 9809474A FR 9809474 A FR9809474 A FR 9809474A FR 2766616 B1 FR2766616 B1 FR 2766616B1
Authority
FR
France
Prior art keywords
manufacturing metallic
metallic microstructures
microstructures
manufacturing
metallic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR9809474A
Other languages
English (en)
Other versions
FR2766616A1 (fr
Inventor
Klaus Heyers
Bernhard Elsner
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Robert Bosch GmbH
Original Assignee
Robert Bosch GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Robert Bosch GmbH filed Critical Robert Bosch GmbH
Publication of FR2766616A1 publication Critical patent/FR2766616A1/fr
Application granted granted Critical
Publication of FR2766616B1 publication Critical patent/FR2766616B1/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
    • B81C1/00134—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems comprising flexible or deformable structures
    • B81C1/0019—Flexible or deformable structures not provided for in groups B81C1/00142 - B81C1/00182
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B3/00—Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
    • B81B3/0064—Constitution or structural means for improving or controlling the physical properties of a device
    • B81B3/0086—Electrical characteristics, e.g. reducing driving voltage, improving resistance to peak voltage
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D1/00—Electroforming
    • C25D1/08—Perforated or foraminous objects, e.g. sieves
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
    • H01L21/76879—Filling of holes, grooves or trenches, e.g. vias, with conductive material by selective deposition of conductive material in the vias, e.g. selective C.V.D. on semiconductor material, plating
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2203/00—Basic microelectromechanical structures
    • B81B2203/03—Static structures
    • B81B2203/0323—Grooves
    • B81B2203/033—Trenches
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2201/00—Manufacture or treatment of microstructural devices or systems
    • B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
    • B81C2201/0101—Shaping material; Structuring the bulk substrate or layers on the substrate; Film patterning
    • B81C2201/0102—Surface micromachining
    • B81C2201/0105—Sacrificial layer
    • B81C2201/0109—Sacrificial layers not provided for in B81C2201/0107 - B81C2201/0108

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Chemical & Material Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Metallurgy (AREA)
  • Electrochemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physics & Mathematics (AREA)
  • Materials Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Organic Chemistry (AREA)
  • Power Engineering (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Drying Of Semiconductors (AREA)
  • Micromachines (AREA)
  • Electrodes Of Semiconductors (AREA)
  • ing And Chemical Polishing (AREA)
FR9809474A 1997-07-26 1998-07-24 Procede de fabrication de microstructures metalliques Expired - Fee Related FR2766616B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19732250A DE19732250A1 (de) 1997-07-26 1997-07-26 Verfahren zur Herstellung metallischer Mikrostrukturen

Publications (2)

Publication Number Publication Date
FR2766616A1 FR2766616A1 (fr) 1999-01-29
FR2766616B1 true FR2766616B1 (fr) 2004-03-12

Family

ID=7837009

Family Applications (1)

Application Number Title Priority Date Filing Date
FR9809474A Expired - Fee Related FR2766616B1 (fr) 1997-07-26 1998-07-24 Procede de fabrication de microstructures metalliques

Country Status (6)

Country Link
US (1) US6030515A (fr)
JP (1) JPH11100689A (fr)
CH (1) CH693158A5 (fr)
DE (1) DE19732250A1 (fr)
FR (1) FR2766616B1 (fr)
GB (1) GB2327811B (fr)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19800745A1 (de) * 1998-01-12 1999-07-15 Bosch Gmbh Robert Design- und Herstellungsverfahren für eine mikromechanische Vorrichtung
US6334942B1 (en) * 1999-02-09 2002-01-01 Tessera, Inc. Selective removal of dielectric materials and plating process using same
US6436265B1 (en) * 1999-03-29 2002-08-20 Canon Kabushiki Kaisha Microstructure array, and apparatus and method for forming the microstructure array, and a mold for fabricating a microstructure array
US6440849B1 (en) 1999-10-18 2002-08-27 Agere Systems Guardian Corp. Microstructure control of copper interconnects
US6254593B1 (en) * 1999-12-10 2001-07-03 Advanced Cardiovascular Systems, Inc. Bifurcated stent delivery system having retractable sheath
DE10019408C2 (de) * 2000-04-19 2003-11-13 Bosch Gmbh Robert Feldeffekttransistor, insbesondere zur Verwendung als Sensorelement oder Beschleunigungssensor, und Verfahren zu dessen Herstellung
DE10200869A1 (de) 2002-01-11 2003-07-31 Infineon Technologies Ag Verfahren zum Erzeugen einer Schutzabdeckung für ein Bauelement
US6821901B2 (en) * 2002-02-28 2004-11-23 Seung-Jin Song Method of through-etching substrate
DE10316777B4 (de) 2003-04-11 2005-11-24 Infineon Technologies Ag Verfahren zum Erzeugen einer Schutzabdeckung für ein Bauelement
DE10316776B4 (de) * 2003-04-11 2005-03-17 Infineon Technologies Ag Verfahren zum Erzeugen einer Schutzabdeckung für ein Bauelement
EP2124514A1 (fr) 2008-05-23 2009-11-25 Nederlandse Centrale Organisatie Voor Toegepast Natuurwetenschappelijk Onderzoek TNO Préparation d'un motif métallique sur un substrat plastique
EP2230206B1 (fr) * 2009-03-13 2013-07-17 Nivarox-FAR S.A. Moule pour galvanoplastie et son procédé de fabrication
WO2013071060A1 (fr) * 2011-11-09 2013-05-16 Robert Bosch Gmbh Procédé de formation de tranchées larges à l'aide d'un lingot de silicium sacrificiel
JP5786906B2 (ja) 2013-08-02 2015-09-30 オムロン株式会社 電鋳部品の製造方法

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3642476A (en) * 1970-05-21 1972-02-15 Ibm Method of preparing glass masters
US4643804A (en) * 1985-07-25 1987-02-17 At&T Bell Laboratories Forming thick dielectric at the bottoms of trenches utilized in integrated-circuit devices
DE3879771D1 (de) * 1987-05-27 1993-05-06 Siemens Ag Aetzverfahren zum erzeugen von lochoeffnungen oder graeben in n-dotiertem silizium.
DE3727142C2 (de) * 1987-08-14 1994-02-24 Kernforschungsz Karlsruhe Verfahren zur Herstellung von Mikrosensoren mit integrierter Signalverarbeitung
US4849370A (en) * 1987-12-21 1989-07-18 Texas Instruments Incorporated Anodizable strain layer for SOI semiconductor structures
JPH0228932A (ja) * 1988-07-19 1990-01-31 Fujitsu Ltd 半導体装置
US5145571A (en) * 1990-08-03 1992-09-08 Bipolar Integrated Technology, Inc. Gold interconnect with sidewall-spacers
US5061650A (en) * 1991-01-17 1991-10-29 Micron Technology, Inc. Method for formation of a stacked capacitor
JPH04359518A (ja) * 1991-06-06 1992-12-11 Nec Corp 半導体装置の製造方法
JP3367113B2 (ja) * 1992-04-27 2003-01-14 株式会社デンソー 加速度センサ
US5412265A (en) * 1993-04-05 1995-05-02 Ford Motor Company Planar micro-motor and method of fabrication
JPH07118849A (ja) * 1993-10-20 1995-05-09 Matsushita Electric Ind Co Ltd 導体薄膜パターンの形成方法
US5559058A (en) * 1994-11-15 1996-09-24 Peter S. Zory, Jr. Method for producing native oxides on compound semiconductors

Also Published As

Publication number Publication date
CH693158A5 (de) 2003-03-14
JPH11100689A (ja) 1999-04-13
GB2327811B (en) 1999-12-01
DE19732250A1 (de) 1999-01-28
FR2766616A1 (fr) 1999-01-29
GB2327811A (en) 1999-02-03
GB9816240D0 (en) 1998-09-23
US6030515A (en) 2000-02-29

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Legal Events

Date Code Title Description
ST Notification of lapse

Effective date: 20080331