DE69113471T2 - Auf einer strukturierten Substratoberfläche aufgewachsene Halbleiter-Laserdiode. - Google Patents

Auf einer strukturierten Substratoberfläche aufgewachsene Halbleiter-Laserdiode.

Info

Publication number
DE69113471T2
DE69113471T2 DE69113471T DE69113471T DE69113471T2 DE 69113471 T2 DE69113471 T2 DE 69113471T2 DE 69113471 T DE69113471 T DE 69113471T DE 69113471 T DE69113471 T DE 69113471T DE 69113471 T2 DE69113471 T2 DE 69113471T2
Authority
DE
Germany
Prior art keywords
semiconductor laser
substrate surface
laser diode
structured substrate
diode grown
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69113471T
Other languages
English (en)
Other versions
DE69113471D1 (de
Inventor
Fritz Dr Gfeller
Heinz Dr Jaeckel
Heinz Dr Meier
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Application granted granted Critical
Publication of DE69113471D1 publication Critical patent/DE69113471D1/de
Publication of DE69113471T2 publication Critical patent/DE69113471T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/16—Window-type lasers, i.e. with a region of non-absorbing material between the active region and the reflecting surface
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/305—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure
    • H01S5/3077—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure plane dependent doping
    • H01S5/3081—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure plane dependent doping using amphoteric doping
DE69113471T 1991-12-05 1991-12-05 Auf einer strukturierten Substratoberfläche aufgewachsene Halbleiter-Laserdiode. Expired - Fee Related DE69113471T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP91810943A EP0544968B1 (de) 1991-12-05 1991-12-05 Auf einer strukturierten Substratoberfläche aufgewachsene Halbleiter-Laserdiode

Publications (2)

Publication Number Publication Date
DE69113471D1 DE69113471D1 (de) 1995-11-02
DE69113471T2 true DE69113471T2 (de) 1996-05-02

Family

ID=8208908

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69113471T Expired - Fee Related DE69113471T2 (de) 1991-12-05 1991-12-05 Auf einer strukturierten Substratoberfläche aufgewachsene Halbleiter-Laserdiode.

Country Status (4)

Country Link
US (1) US5280535A (de)
EP (1) EP0544968B1 (de)
JP (1) JPH0728104B2 (de)
DE (1) DE69113471T2 (de)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5394421A (en) * 1993-01-11 1995-02-28 Rohm Co., Ltd. Semiconductor laser device including a step electrode in a form of eaves
KR950004667A (ko) * 1993-07-29 1995-02-18 가나이 쯔또무 반도체레이저소자 및 그 제작방법
US6996150B1 (en) 1994-09-14 2006-02-07 Rohm Co., Ltd. Semiconductor light emitting device and manufacturing method therefor
JP4011640B2 (ja) * 1995-03-02 2007-11-21 三菱電機株式会社 半導体レーザ，及び半導体レーザの製造方法
US5665637A (en) * 1995-11-17 1997-09-09 Lucent Technologies Inc. Passivated faceted article comprising a semiconductor laser
US6590920B1 (en) 1998-10-08 2003-07-08 Adc Telecommunications, Inc. Semiconductor lasers having single crystal mirror layers grown directly on facet
US6782024B2 (en) * 2001-05-10 2004-08-24 Bookham Technology Plc High power semiconductor laser diode
US7160746B2 (en) 2001-07-27 2007-01-09 Lightwave Microsystems Corporation GeBPSG top clad for a planar lightwave circuit
EP1866955A4 (de) * 2005-03-25 2011-02-02 Trumpf Photonics Inc Laserfacettenpassivierung
DE102015104184A1 (de) * 2015-03-20 2016-09-22 Osram Opto Semiconductors Gmbh Kantenemittierender Halbleiterlaser und Verfahren zu seiner Herstellung

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS586191A (ja) * 1981-07-03 1983-01-13 Hitachi Ltd 半導体レ−ザ装置
US4831630A (en) * 1983-04-14 1989-05-16 Xerox Corporation Phased-locked window lasers
DE3604293A1 (de) * 1986-02-12 1987-08-13 Telefunken Electronic Gmbh Heterostruktur-halbleiterlaserdiode
US4839307A (en) * 1986-05-14 1989-06-13 Omron Tateisi Electronics Co. Method of manufacturing a stripe-shaped heterojunction laser with unique current confinement
EP0261262B1 (de) * 1986-09-23 1992-06-17 International Business Machines Corporation Streifenlaser mit transversalem Übergang
US4932033A (en) * 1986-09-26 1990-06-05 Canon Kabushiki Kaisha Semiconductor laser having a lateral p-n junction utilizing inclined surface and method of manufacturing same
US4785457A (en) * 1987-05-11 1988-11-15 Rockwell International Corporation Heterostructure semiconductor laser
EP0332723A1 (de) * 1988-03-15 1989-09-20 International Business Machines Corporation Hochenergie-Halbleiter-Diodenlaser
DE3886751T2 (de) * 1988-09-12 1994-06-23 Ibm Methode zum Ätzen von Spiegelfacetten an III-V-Halbleiterstrukturen.

Also Published As

Publication number Publication date
US5280535A (en) 1994-01-18
JPH0728104B2 (ja) 1995-03-29
EP0544968B1 (de) 1995-09-27
JPH05235476A (ja) 1993-09-10
DE69113471D1 (de) 1995-11-02
EP0544968A1 (de) 1993-06-09

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee