FR2780199B1 - Procede de fabrication d'un dispositif de memorisation ferroelectrique et dispositif obtenu par ce procede - Google Patents

Procede de fabrication d'un dispositif de memorisation ferroelectrique et dispositif obtenu par ce procede

Info

Publication number
FR2780199B1
FR2780199B1 FR9907317A FR9907317A FR2780199B1 FR 2780199 B1 FR2780199 B1 FR 2780199B1 FR 9907317 A FR9907317 A FR 9907317A FR 9907317 A FR9907317 A FR 9907317A FR 2780199 B1 FR2780199 B1 FR 2780199B1
Authority
FR
France
Prior art keywords
ferroelectric
manufacturing
memorization
device obtained
memorization device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR9907317A
Other languages
English (en)
Other versions
FR2780199A1 (fr
Inventor
Dong Jin Jung
Ki Nam Kim
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Samsung Electronics Co Ltd
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of FR2780199A1 publication Critical patent/FR2780199A1/fr
Application granted granted Critical
Publication of FR2780199B1 publication Critical patent/FR2780199B1/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/40—Capacitors
    • H01L28/55—Capacitors with a dielectric comprising a perovskite structure material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Semiconductor Memories (AREA)
FR9907317A 1998-06-20 1999-06-10 Procede de fabrication d'un dispositif de memorisation ferroelectrique et dispositif obtenu par ce procede Expired - Fee Related FR2780199B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019980023272A KR100279297B1 (ko) 1998-06-20 1998-06-20 반도체 장치 및 그의 제조 방법

Publications (2)

Publication Number Publication Date
FR2780199A1 FR2780199A1 (fr) 1999-12-24
FR2780199B1 true FR2780199B1 (fr) 2005-04-15

Family

ID=19540170

Family Applications (1)

Application Number Title Priority Date Filing Date
FR9907317A Expired - Fee Related FR2780199B1 (fr) 1998-06-20 1999-06-10 Procede de fabrication d'un dispositif de memorisation ferroelectrique et dispositif obtenu par ce procede

Country Status (8)

Country Link
US (2) US6172386B1 (fr)
JP (2) JP4005270B2 (fr)
KR (1) KR100279297B1 (fr)
CN (1) CN100539013C (fr)
DE (1) DE19926711B4 (fr)
FR (1) FR2780199B1 (fr)
GB (1) GB2338595B (fr)
TW (1) TW418523B (fr)

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KR100292819B1 (ko) * 1998-07-07 2001-09-17 윤종용 커패시터및그의제조방법
US6586790B2 (en) * 1998-07-24 2003-07-01 Kabushiki Kaisha Toshiba Semiconductor device and method for manufacturing the same
US6174735B1 (en) * 1998-10-23 2001-01-16 Ramtron International Corporation Method of manufacturing ferroelectric memory device useful for preventing hydrogen line degradation
JP3475100B2 (ja) * 1998-11-26 2003-12-08 シャープ株式会社 半導体装置の製造方法
US6440850B1 (en) 1999-08-27 2002-08-27 Micron Technology, Inc. Structure for an electrical contact to a thin film in a semiconductor structure and method for making the same
JP3276351B2 (ja) * 1999-12-13 2002-04-22 松下電器産業株式会社 半導体装置の製造方法
US6376370B1 (en) * 2000-01-18 2002-04-23 Micron Technology, Inc. Process for providing seed layers for using aluminum, copper, gold and silver metallurgy process for providing seed layers for using aluminum, copper, gold and silver metallurgy
US6420262B1 (en) * 2000-01-18 2002-07-16 Micron Technology, Inc. Structures and methods to enhance copper metallization
US7262130B1 (en) * 2000-01-18 2007-08-28 Micron Technology, Inc. Methods for making integrated-circuit wiring from copper, silver, gold, and other metals
US6651658B1 (en) * 2000-08-03 2003-11-25 Sequal Technologies, Inc. Portable oxygen concentration system and method of using the same
KR100382719B1 (ko) * 2000-08-25 2003-05-09 삼성전자주식회사 강유전체 커패시터를 포함하는 반도체 장치 및 그 제조방법
US6887716B2 (en) * 2000-12-20 2005-05-03 Fujitsu Limited Process for producing high quality PZT films for ferroelectric memory integrated circuits
WO2002075780A2 (fr) * 2001-03-21 2002-09-26 Koninklijke Philips Electronics N.V. Dispositif électronique
DE10114406A1 (de) * 2001-03-23 2002-10-02 Infineon Technologies Ag Verfahren zur Herstellung ferroelektrischer Speicherzellen
JP2003059905A (ja) * 2001-07-31 2003-02-28 Applied Materials Inc エッチング方法、キャパシタの製造方法、および半導体装置
JP2003204043A (ja) * 2001-10-24 2003-07-18 Fujitsu Ltd 半導体装置及びその製造方法
JP2003152165A (ja) 2001-11-15 2003-05-23 Fujitsu Ltd 半導体装置およびその製造方法
JP4641702B2 (ja) * 2002-11-20 2011-03-02 ソニー株式会社 強誘電体型不揮発性半導体メモリ及びその製造方法
US20040153611A1 (en) * 2003-02-04 2004-08-05 Sujat Jamil Methods and apparatus for detecting an address conflict
US7287126B2 (en) * 2003-07-30 2007-10-23 Intel Corporation Methods and apparatus for maintaining cache coherency
US7220665B2 (en) * 2003-08-05 2007-05-22 Micron Technology, Inc. H2 plasma treatment
JP4308691B2 (ja) * 2004-03-19 2009-08-05 富士通マイクロエレクトロニクス株式会社 半導体基板および半導体基板の製造方法
CN100463182C (zh) * 2004-10-19 2009-02-18 精工爱普生株式会社 铁电体存储器及其制造方法
JP4257537B2 (ja) * 2005-06-02 2009-04-22 セイコーエプソン株式会社 強誘電体層の製造方法、電子機器の製造方法、強誘電体メモリ装置の製造方法、圧電素子の製造方法、およびインクジェット式記録ヘッドの製造方法
JP2007073909A (ja) * 2005-09-09 2007-03-22 Oki Electric Ind Co Ltd 半導体メモリの製造方法
US7772014B2 (en) * 2007-08-28 2010-08-10 Texas Instruments Incorporated Semiconductor device having reduced single bit fails and a method of manufacture thereof
US9846664B2 (en) 2010-07-09 2017-12-19 Cypress Semiconductor Corporation RFID interface and interrupt
US8723654B2 (en) 2010-07-09 2014-05-13 Cypress Semiconductor Corporation Interrupt generation and acknowledgment for RFID
US9092582B2 (en) 2010-07-09 2015-07-28 Cypress Semiconductor Corporation Low power, low pin count interface for an RFID transponder
JP2013120825A (ja) 2011-12-07 2013-06-17 Elpida Memory Inc 半導体装置及びその製造方法
US11621269B2 (en) * 2019-03-11 2023-04-04 Globalfoundries U.S. Inc. Multi-level ferroelectric memory cell
CN113400696B (zh) * 2021-06-26 2022-02-22 宜宾学院 大口径高压纤维增强柔性复合管连接方法

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Publication number Priority date Publication date Assignee Title
JP3185220B2 (ja) * 1990-09-28 2001-07-09 セイコーエプソン株式会社 半導体装置
JPH04158570A (ja) * 1990-10-22 1992-06-01 Seiko Epson Corp 半導体装置の構造及びその製造方法
EP0516031A1 (fr) * 1991-05-29 1992-12-02 Ramtron International Corporation Cellule de mémoire ferroélectrique empilée et procédé de fabrication
US5206788A (en) * 1991-12-12 1993-04-27 Ramtron Corporation Series ferroelectric capacitor structure for monolithic integrated circuits and method
US5468684A (en) * 1991-12-13 1995-11-21 Symetrix Corporation Integrated circuit with layered superlattice material and method of fabricating same
US5723171A (en) * 1992-10-23 1998-03-03 Symetrix Corporation Integrated circuit electrode structure and process for fabricating same
JP3299837B2 (ja) * 1993-07-22 2002-07-08 シャープ株式会社 半導体記憶装置
JPH07111318A (ja) * 1993-10-12 1995-04-25 Olympus Optical Co Ltd 強誘電体メモリ
US5965942A (en) * 1994-09-28 1999-10-12 Sharp Kabushiki Kaisha Semiconductor memory device with amorphous diffusion barrier between capacitor and plug
JPH08191133A (ja) * 1994-11-10 1996-07-23 Sony Corp 半導体素子のキャパシタ構造及びその作製方法
US5977577A (en) * 1994-11-15 1999-11-02 Radiant Technologies, Inc Ferroelectric based memory devices utilizing low curie point ferroelectrics and encapsulation
CN1075243C (zh) * 1994-12-28 2001-11-21 松下电器产业株式会社 集成电路用电容元件及其制造方法
US5739049A (en) * 1995-08-21 1998-04-14 Hyundai Electronics Industries Co., Ltd. Method for fabricating semiconductor device having a capacitor and a method of forming metal wiring on a semiconductor substrate
JPH09102587A (ja) * 1995-10-05 1997-04-15 Olympus Optical Co Ltd 強誘電体薄膜素子
KR100200704B1 (ko) * 1996-06-07 1999-06-15 윤종용 강유전체 메모리 장치 및 그 제조 방법
KR100197566B1 (ko) * 1996-06-29 1999-06-15 윤종용 강유전체 메모리 장치
JPH1022463A (ja) * 1996-07-02 1998-01-23 Sony Corp 積層構造及びその製造方法、キャパシタ構造並びに不揮発性メモリ
EP0837504A3 (fr) * 1996-08-20 1999-01-07 Ramtron International Corporation Dispositif ferroélectrique partiellement ou complètement encapsulé
US5990513A (en) * 1996-10-08 1999-11-23 Ramtron International Corporation Yield enhancement technique for integrated circuit processing to reduce effects of undesired dielectric moisture retention and subsequent hydrogen out-diffusion
KR100268453B1 (ko) * 1998-03-30 2000-11-01 윤종용 반도체 장치 및 그것의 제조 방법
KR100279297B1 (ko) * 1998-06-20 2001-02-01 윤종용 반도체 장치 및 그의 제조 방법

Also Published As

Publication number Publication date
KR20000002485A (ko) 2000-01-15
GB2338595B (en) 2000-08-23
JP2000031404A (ja) 2000-01-28
TW418523B (en) 2001-01-11
FR2780199A1 (fr) 1999-12-24
US6172386B1 (en) 2001-01-09
JP4005270B2 (ja) 2007-11-07
DE19926711A1 (de) 1999-12-23
KR100279297B1 (ko) 2001-02-01
GB2338595A (en) 1999-12-22
US6515323B1 (en) 2003-02-04
JP2007294995A (ja) 2007-11-08
CN1239828A (zh) 1999-12-29
DE19926711B4 (de) 2006-08-24
CN100539013C (zh) 2009-09-09
GB9909488D0 (en) 1999-06-23

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Effective date: 20150227