GB2358287B - Semiconductor memory device having capacitor protection layer and method for manufacturing the same - Google Patents

Semiconductor memory device having capacitor protection layer and method for manufacturing the same

Info

Publication number
GB2358287B
GB2358287B GB0022092A GB0022092A GB2358287B GB 2358287 B GB2358287 B GB 2358287B GB 0022092 A GB0022092 A GB 0022092A GB 0022092 A GB0022092 A GB 0022092A GB 2358287 B GB2358287 B GB 2358287B
Authority
GB
United Kingdom
Prior art keywords
manufacturing
memory device
same
semiconductor memory
protection layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
GB0022092A
Other versions
GB0022092D0 (en
GB2358287A (en
Inventor
Yong-Tak Lee
Hag-Ju Cho
Yeong-Kwan Kim
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Samsung Electronics Co Ltd
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from KR10-1999-0065074A external-priority patent/KR100370235B1/en
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of GB0022092D0 publication Critical patent/GB0022092D0/en
Publication of GB2358287A publication Critical patent/GB2358287A/en
Application granted granted Critical
Publication of GB2358287B publication Critical patent/GB2358287B/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/40—Capacitors
    • H01L28/55—Capacitors with a dielectric comprising a perovskite structure material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors
    • H10B53/30—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors characterised by the memory core region

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Memories (AREA)
  • Formation Of Insulating Films (AREA)
  • Non-Volatile Memory (AREA)
GB0022092A 1999-09-10 2000-09-08 Semiconductor memory device having capacitor protection layer and method for manufacturing the same Expired - Lifetime GB2358287B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR19990038709 1999-09-10
KR10-1999-0065074A KR100370235B1 (en) 1999-09-10 1999-12-29 Semiconductor memory device having capacitor protection layer and method of manufacturing thereof

Publications (3)

Publication Number Publication Date
GB0022092D0 GB0022092D0 (en) 2000-10-25
GB2358287A GB2358287A (en) 2001-07-18
GB2358287B true GB2358287B (en) 2004-05-12

Family

ID=26636113

Family Applications (1)

Application Number Title Priority Date Filing Date
GB0022092A Expired - Lifetime GB2358287B (en) 1999-09-10 2000-09-08 Semiconductor memory device having capacitor protection layer and method for manufacturing the same

Country Status (3)

Country Link
JP (1) JP3950290B2 (en)
CN (1) CN1173406C (en)
GB (1) GB2358287B (en)

Families Citing this family (39)

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US6485988B2 (en) * 1999-12-22 2002-11-26 Texas Instruments Incorporated Hydrogen-free contact etch for ferroelectric capacitor formation
US6838717B1 (en) * 2000-08-31 2005-01-04 Agere Systems Inc. Stacked structure for parallel capacitors and method of fabrication
JP4608815B2 (en) * 2001-06-08 2011-01-12 ソニー株式会社 Method for manufacturing nonvolatile semiconductor memory device
JP3839281B2 (en) * 2001-07-05 2006-11-01 株式会社ルネサステクノロジ Manufacturing method of semiconductor device
JP2003068987A (en) 2001-08-28 2003-03-07 Matsushita Electric Ind Co Ltd Semiconductor storage device and its manufacturing method
KR100561839B1 (en) * 2001-11-10 2006-03-16 삼성전자주식회사 Ferroelectric capacitor and method of manufacturing the same
JP2003243625A (en) * 2002-02-19 2003-08-29 Seiko Epson Corp Ferroelectric memory device and method of manufacturing the same
JP4090766B2 (en) 2002-03-19 2008-05-28 富士通株式会社 Manufacturing method of semiconductor device
JP2004095861A (en) 2002-08-30 2004-03-25 Fujitsu Ltd Semiconductor device and manufacturing method therefor
US6943398B2 (en) * 2002-11-13 2005-09-13 Matsushita Electric Industrial Co., Ltd. Semiconductor device and method for fabricating the same
US6785119B2 (en) * 2002-11-29 2004-08-31 Infineon Technologies Ag Ferroelectric capacitor and process for its manufacture
US20040206993A1 (en) * 2003-04-17 2004-10-21 Infineon Technologies Ag Process for fabrication of ferroelectric devices with reduced hydrogen ion damage
US6839220B1 (en) * 2003-07-18 2005-01-04 Infineon Technologies Ag Multi-layer barrier allowing recovery anneal for ferroelectric capacitors
KR100947064B1 (en) * 2003-08-13 2010-03-10 삼성전자주식회사 Capacitor of semiconductor device and memory device having the same
US7618681B2 (en) * 2003-10-28 2009-11-17 Asm International N.V. Process for producing bismuth-containing oxide films
JP2005183841A (en) * 2003-12-22 2005-07-07 Fujitsu Ltd Manufacturing method of semiconductor device
CN100431155C (en) * 2004-06-28 2008-11-05 富士通株式会社 Semiconductor device and method for fabricating the same
JP4497312B2 (en) * 2004-10-19 2010-07-07 セイコーエプソン株式会社 Ferroelectric memory manufacturing method
CN100463182C (en) * 2004-10-19 2009-02-18 精工爱普生株式会社 Ferroelectric memory and method of manufacturing the same
JP5464775B2 (en) * 2004-11-19 2014-04-09 エイエスエム インターナショナル エヌ．ヴェー． Method for producing metal oxide film at low temperature
JP2006261328A (en) * 2005-03-16 2006-09-28 Fujitsu Ltd Capacitive element, manufacturing method thereof, and semiconductor device
JP2006310637A (en) * 2005-04-28 2006-11-09 Toshiba Corp Semiconductor device
JP5136052B2 (en) 2005-06-02 2013-02-06 富士通セミコンダクター株式会社 Semiconductor device and manufacturing method thereof
JP2006203252A (en) * 2006-04-10 2006-08-03 Fujitsu Ltd Semiconductor device
JP4777127B2 (en) * 2006-04-24 2011-09-21 富士通セミコンダクター株式会社 Semiconductor device and manufacturing method thereof
US7767589B2 (en) * 2007-02-07 2010-08-03 Raytheon Company Passivation layer for a circuit device and method of manufacture
JP5163641B2 (en) * 2007-02-27 2013-03-13 富士通セミコンダクター株式会社 Semiconductor memory device, semiconductor memory device manufacturing method, and package resin forming method
US7750852B2 (en) * 2007-04-13 2010-07-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP4719208B2 (en) * 2007-12-20 2011-07-06 株式会社東芝 Manufacturing method of magnetic random access memory
JP5347381B2 (en) 2008-08-28 2013-11-20 富士通セミコンダクター株式会社 Manufacturing method of semiconductor device
JP5455352B2 (en) * 2008-10-28 2014-03-26 太陽誘電株式会社 Thin film MIM capacitor and manufacturing method thereof
WO2013000501A1 (en) * 2011-06-27 2013-01-03 Thin Film Electronics Asa Short circuit reduction in a ferroelectric memory cell comprising a stack of layers arranged on a flexible substrate
JP5742658B2 (en) * 2011-10-20 2015-07-01 富士通セミコンダクター株式会社 Semiconductor device and manufacturing method thereof
JP5862290B2 (en) * 2011-12-28 2016-02-16 富士通セミコンダクター株式会社 Semiconductor device and manufacturing method thereof
US9245925B1 (en) * 2015-01-15 2016-01-26 Macronix International Co., Ltd. RRAM process with metal protection layer
TWI569416B (en) * 2015-11-26 2017-02-01 華邦電子股份有限公司 Resistive random access memory and method of fabricating the same
NL2017198B1 (en) * 2016-07-20 2018-01-26 Jiaco Instr Holding B V Decapsulation of electronic devices
CN108538780A (en) * 2018-04-18 2018-09-14 睿力集成电路有限公司 The manufacturing method of bit line/storage node contacts embolism and polysilicon contact film
KR20220020368A (en) * 2019-10-12 2022-02-18 양쯔 메모리 테크놀로지스 씨오., 엘티디. Three-dimensional memory devices having a hydrogen blocking layer and methods of manufacturing the same

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0514547A1 (en) * 1990-08-21 1992-11-25 Ramtron International Corporation SEMICONDUCTOR MEMORY HAVING A FERROELECTRIC CAPACITOR AND A TiON BARRIER FILM
EP0642167A2 (en) * 1993-08-05 1995-03-08 Matsushita Electronics Corporation Semiconductor device having capacitor and manufacturing method thereof
GB2313232A (en) * 1996-05-14 1997-11-19 Nec Corp A non volatile semiconductor memory device and method of manufacturing the same
GB2336468A (en) * 1998-04-18 1999-10-20 Samsung Electronics Co Ltd Method for fabricating a ferroelectric memory device

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0514547A1 (en) * 1990-08-21 1992-11-25 Ramtron International Corporation SEMICONDUCTOR MEMORY HAVING A FERROELECTRIC CAPACITOR AND A TiON BARRIER FILM
EP0642167A2 (en) * 1993-08-05 1995-03-08 Matsushita Electronics Corporation Semiconductor device having capacitor and manufacturing method thereof
GB2313232A (en) * 1996-05-14 1997-11-19 Nec Corp A non volatile semiconductor memory device and method of manufacturing the same
GB2336468A (en) * 1998-04-18 1999-10-20 Samsung Electronics Co Ltd Method for fabricating a ferroelectric memory device

Also Published As

Publication number Publication date
GB0022092D0 (en) 2000-10-25
JP3950290B2 (en) 2007-07-25
CN1292571A (en) 2001-04-25
CN1173406C (en) 2004-10-27
JP2001111007A (en) 2001-04-20
GB2358287A (en) 2001-07-18

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Legal Events

Date Code Title Description
PE20 Patent expired after termination of 20 years

Expiry date: 20200907