CN114000123A - 一种制备SiO2薄膜的方法、芯片及装置 - Google Patents
一种制备SiO2薄膜的方法、芯片及装置 Download PDFInfo
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Abstract
本发明公开了一种制备SiO2薄膜的方法,采用PECVD沉积方式制备SiO2薄膜:采用高频与低频交替方式沉积,其中高频频率13.56MHz;低频频率为50‑400KHz;高频功率为20‑100W,低频功率为35‑100W;沉积的气体为混合气体与笑气的混合气体,气体压力为900‑1600mtorr,其中硅烷与笑气的流量比例为90‑300:600‑800;沉积温度为250‑300℃。通过采用高低频交替生长SiO2薄膜,薄膜的致密性较高,抵抗湿气的能力强;通过调整高低频的工艺参数,得到低应力的SiO2薄膜,薄膜通过高低频的交替生长可以得到稳定的低应力SiO2薄膜,工艺稳定可以重复运行应力值保持稳定不漂移。
Description
技术领域
本发明涉及芯片生产技术领域,尤其涉及一种制备SiO2薄膜的方法、芯片及装置。
背景技术
近年来,为了满足人们对信息传递的要求,光通信网络逐步向高速、全光网方向发展。半导体光电探测器作为光通信网络中重要的接收器件,其性能影响整个光通信网络的运转。评价光电探测器的主要指标有:响应度、暗电流、响应波长范围、可靠性等,其可靠性测试包括高低温冲击、高温热、高温老化等。
芯片作为光电探测器重要部件,其品质决定光电探测器的性能。
现有的探测器芯片通过PECVD的方式采用硅烷(SiH4)与笑气(N20)为原料并用纯高频(HF)13.56MHz的方式生长SiO2薄膜,该生长工艺SiO2薄膜长时间在高温热的环境下,SiO2薄膜容易吸水气,导致探测器暗电流上升。且纯高频生长的SiO2薄膜,生长的薄膜应力调整的范围小。
发明内容
为解决背景技术中存在的至少一个方面的技术问题,本发明提出一种制备 SiO2薄膜的方法、芯片及光电探测器。
本发明提出的一种制备SiO2薄膜的方法,采用PECVD沉积方式制备SiO2薄膜:
采用高频与低频交替方式沉积,其中高频频率13.56MHz;低频频率为 50-400KHz;
高频功率为20-100W,低频功率为35-100W;
沉积的气体压力为900-1600mtorr,沉积的气体为混合气体与笑气,其中混合气体与笑气的流量比例为90-300:600-800;所述混合气体包括硅烷和氮气,所述硅烷的体积占比为5%;
沉积温度为250-300℃。
优选地,所述高频与所述低频交替时间为:高频10-14s;低频6-9s。
优选地,高频与所述低频交替时间为:高频13s;低频7s。
优选地,高频与所述低频交替时间为:高频12s;低频8s。
优选地,所述低频频率为100KHz。
优选地,所述高频功率为35W,低频功率为50W。
优选地,所述混合气体的流量为110sccm,所述笑气的流量为710sccm。
优选地,沉积温度为280℃。
本发明还公开了一种芯片,其采用上述任意一项制备SiO2薄膜。
本发明还公开了一种装置,包括所述的芯片。
本发明公开的一个方面带来的有益效果是:
通过采用高低频交替生长SiO2薄膜,薄膜的致密性较高,抵抗湿气的能力强;通过调整高低频的工艺参数,得到低应力的SiO2薄膜,薄膜通过高低频的交替生长可以得到稳定的低应力SiO2薄膜,工艺稳定可以重复运行应力值保持稳定不漂移。
具体实施方式
实施例1:
本实施例提出的一种制备SiO2薄膜的方法,采用PECVD沉积方式制备SiO2薄膜。
采用高频与低频交替方式沉积,其中高频频率13.56MHz;低频频率为 100KHz。
高频功率为35W,低频功率为35W。
沉积的气体压力为900-1600mtorr,沉积的气体为混合气体与笑气,其中混合气体与笑气的流量比例为90-300:600-800;所述混合气体包括硅烷和氮气,所述硅烷的体积占比为5%。本实施例中混合气体的流量为110sccm,所述笑气的流量为710sccm。选取合适的硅烷与笑气的流量比生成的SiO2薄膜是一个硅原子与2个氧原子,硅烷偏高会导致生长Si0。硅烷与笑气的流量比在一定的范围才能生长SiO2,比例偏大或偏小生长的可能是一氧化硅,Si原子偏多会导致薄膜的绝缘性能差,器件漏电。通入混合气体,对设备以及厂务的维护成本低。因为稀释后的硅烷在空气中不易自然。纯硅烷遇空气就会自然,对厂务以及设备的要求高。
沉积温度为250-300℃,本实施例中沉积温度为280℃。沉积温度过高InP 会分解,温度过低薄膜密度低,疏松,致密性差。
实施例2:
本实施例提出的一种制备SiO2薄膜的方法,采用PECVD沉积方式制备SiO2薄膜:
采用高频与低频交替方式沉积,其中高频频率13.56MHz;低频频率为 50KHz。
高频功率为100W,低频功率为100W。
沉积的气体压力为900mtorr,沉积的气体为混合气体与笑气,其中混合气体与笑气的流量比例为300:600;所述混合气体包括硅烷和氮气,所述硅烷的体积占比为5%;沉积温度为270℃。
实施例3:
本实施例提出的一种制备SiO2薄膜的方法,采用PECVD沉积方式制备SiO2薄膜:
采用高频与低频交替方式沉积,其中高频频率13.56MHz;低频频率为 400KHz。
高频功率为20W,低频功率为35W。
沉积的气体压力为1600mtorr,沉积的气体为混合气体与笑气,其中混合气体与笑气的流量比例为200:750;所述混合气体包括硅烷和氮气,所述硅烷的体积占比为5%;沉积温度为300℃。
实施例4:
本实施例提出的一种制备SiO2薄膜的方法,采用PECVD沉积方式制备SiO2薄膜:
采用高频与低频交替方式沉积,其中高频频率13.56MHz;低频频率为 260KHz。
高频功率为80W,低频功率为60W。
沉积的气体压力为1200mtorr,沉积的气体为混合气体与笑气,其中混合气体与笑气的流量比例为100;650;所述混合气体包括硅烷和氮气,所述硅烷的体积占比为5%;沉积温度为270℃。
实施例5:
本实施例提出的一种制备SiO2薄膜的方法,采用PECVD沉积方式制备SiO2薄膜:
采用高频与低频交替方式沉积,其中高频频率13.56MHz;低频频率为 350KHz。
高频功率为50W,低频功率为40W。
沉积的气体压力为1500mtorr,沉积的气体为混合气体与笑气,其中混合气体与笑气的流量比例为250:725;所述混合气体包括硅烷和氮气,所述硅烷的体积占比为5%;沉积温度为275℃。
以上实施例中,低频的引入,电离的H离子多,使得薄膜表面悬挂链被饱和,缺陷减少,导致其致密性较好。高低频交互使用时,高频与低频各别产生的不同膜层,其交界处会产生类似湿气的截止层,可以想像成氧化硅膜都有一些小孔,在两层的交界处,这些小孔都错开了,相对降低了湿气的穿透,几十次的交互后,有小孔的层与层之间错位,这样叠加整体就没有小孔。
通过采用高低频交替生长SiO2薄膜,薄膜的致密性较高,抵抗湿气的能力强;通过调整高低频的工艺参数,得到低应力(接近零应力)的SiO2薄膜,薄膜通过高低频的交替生长可以得到稳定的低应力SiO2薄膜,工艺稳定可以重复运行应力值保持稳定不漂移。虽然纯高频也可以调试出低应力的SiO2薄膜,但是其工艺很不稳定,在多次运行之后很容易产生应力偏移。
上述实施例是对PECVD沉积方式中的一些方式、参数进行选择、改变、调整。其它参数、要求、设备等参照现有技术即可。
一种芯片,其采用上述方法制备SiO2薄膜。SiO2薄膜应力值保持稳定。
一种装置,比如光电探测器,包括所述的芯片。通过上述方式形成的芯片,避免探测器暗电流上升。
以上所述,仅为本发明较佳的具体实施方式,但本发明的保护范围并不局限于此,任何熟悉本技术领域的技术人员在本发明揭露的技术范围内,根据本发明的技术方案及其发明构思加以等同替换或改变,都应涵盖在本发明的保护范围之内。
Claims (10)
1.一种制备SiO2薄膜的方法,采用PECVD沉积方式制备SiO2薄膜,其特征在于:
采用高频与低频交替方式沉积,其中高频频率13.56MHz;低频频率为50-400KHz;
高频功率为20-100W,低频功率为35-100W;
沉积的气体压力为900-1600mtorr,沉积的气体为混合气体与笑气,其中混合气体与笑气的流量比例为90-300:600-800;所述混合气体包括硅烷和氮气,所述硅烷的体积占比为5%;
沉积温度为250-300℃。
2.根据权利要求1所述的制备SiO2薄膜的方法,其特征在于,所述高频与所述低频交替时间为:高频10-14s;低频6-9s。
3.根据权利要求2所述的制备SiO2薄膜的方法,其特征在于,述高频与所述低频交替时间为:高频13s;低频7s;或,高频12s;低频8s。
4.根据权利要求2所述的制备SiO2薄膜的方法,其特征在于,气体压力为1400mtorr。
5.根据权利要求1所述的制备SiO2薄膜的方法,其特征在于,所述低频频率为100KHz。
6.根据权利要求1所述的制备SiO2薄膜的方法,其特征在于,所述高频功率为35W,低频功率为50W。
7.根据权利要求1所述的制备SiO2薄膜的方法,其特征在于,所述混合气体的流量为110sccm,所述笑气的流量为710sccm。
8.根据权利要求1所述的制备SiO2薄膜的方法,其特征在于,沉积温度为280℃。
9.一种芯片,其特征在于,其采用如权利要求1-8任意一项制备SiO2薄膜。
10.一种装置,其特征在于,包括如权利要求9所述的芯片。
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