JP6576277B2 - 窒化膜の形成方法 - Google Patents
窒化膜の形成方法 Download PDFInfo
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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Description
前記塩素含有ガスは前記Si原料ガスに対する吸着阻害効果を有することを特徴とする窒化膜の形成方法を提供する。
一般的に、サーマルALDまたはCVDによりSiN膜を形成する際には、被処理基板を処理容器内に収容し、被処理基板を所定温度に加熱した状態で、Si原料ガスとしてDCSガスおよび窒化ガスとしてNH3ガスをシーケンシャルに所定回数繰り返すことにより、または同時に供給することにより、被処理基板の表面に所定膜厚のSiN膜を形成する。
次に、本発明の窒化膜の形成方法の一実施形態について説明する。本実施形態では窒化膜としてシリコン窒化膜(SiN膜)を形成する場合を例にとって説明する。
次に、本実施形態における選択的な膜形成の適用例について説明する。
近時、デバイスの微細化にともない、例えばエッチングのプロセスマージンが益々小さくなっており、エッチング誤差が生じやすくなっている。例えば、図6(a)のような、SiO2膜211とSiN膜212の積層構造210をエッチングにより形成する場合、図6(b)のように、SiN膜212が予定よりも余分にエッチングされることがある。そのような場合に、図6(c)に示すように、本実施形態の選択的なSiN膜の形成方法により、SiN膜212に選択的SiN膜213を成膜することにより、極めて簡便に修復することができる。
次に、下地膜として熱酸化膜(SiO2膜)およびSiN膜を用い、これらの表面にCl2ガスによる前処理を施した場合と施さない場合について、その上にサーマルALDによりSiN膜を成膜した際のインキュベーションタイムを比較した実験例について説明する。
次に、本発明の窒化膜の形成方法を実施するための成膜装置の例について説明する。
本例では成膜装置として縦型バッチ式成膜装置の例を示す。
図9は本発明に係る窒化膜の形成方法を実施するための成膜装置の第1の例を示す縦断面図、図10は図9の成膜装置を示す横断面図である。なお、図10においては、加熱装置を省略している。
Cl2ガス流量:50〜5000sccm
DCSガス流量:500〜2000sccm
NH3ガス流量:1000〜10000sccm
N2ガス(パージガス)流量:50〜5000sccm
1回当たりのDCSガス供給時間:3〜60sec
1回当たりのNH3ガス供給時間:5〜60sec
1回当たりのパージ時間:1〜30sec
本例では成膜装置として水平バッチ式成膜装置の例を示す。
図11は本発明に係る窒化膜の形成方法を実施するための成膜装置の第2の例を概略的に示す水平断面図である。
処理容器61内の搬入出口63に対応する部分は搬入出部65となっており、この搬入出部65において、ターンテーブル62上へのウエハWの搬入およびターンテーブル62上のウエハWの搬出が行われる。
Cl2ガス流量:50〜5000sccm
DCSガス流量:500〜2000sccm
NH3ガス流量:1000〜10000sccm
N2ガス(不活性ガス)流量:50〜10000sccm
本例では成膜装置として枚葉式成膜装置の例を示す。
図12は本発明に係る窒化膜の形成方法を実施するための成膜装置の第3の例を概略的に示す水平断面図である。
Cl2ガス流量:50〜5000sccm
DCSガス流量:10〜2000sccm
NH3ガス流量:1000〜5000sccm
N2ガス(パージガス)流量:50〜5000sccm
1回当たりのDCSガス供給時間:0.1〜60sec
1回当たりのNH3ガス供給時間:0.1〜60sec
1回当たりのパージ時間:0.1〜60sec
以上、本発明の実施形態について説明したが、本発明は、上記の実施形態に限定されず、その思想を逸脱しない範囲で種々変形可能である。
5;ウエハボート
14;窒化ガス供給機構
15;Si原料ガス供給機構
16;塩素含有ガス供給機構
26;パージガス供給機構
41;排気機構
42;加熱装置
62;ターンテーブル
65;搬入出部
71;第1処理エリア(Si原料ガス供給エリア)
72;第2処理エリア(塩素含有ガス供給エリア)
73;第3処理エリア(窒化エリア)
100,101,102;成膜装置
112;基板載置台
113;加熱ヒータ
114;Si原料ガス配管
115;塩素含有ガス配管
116;窒化ガス配管
117;パージガス配管
118;排気管
201;半導体基体
202;第1の下地膜
203;第2の下地膜
204;Cl2ガス
205;SiN膜
211;SiO2膜
212;SiN膜
213;選択的SiN膜
221;ゲート電極
222;スペーサ
223;熱酸化膜
224;選択的SiN膜
W;半導体ウエハ
Claims (11)
- 第1の下地膜と第2の下地膜を有する被処理基板を所定温度に加熱しつつ塩素含有ガスを供給し、前記第1の下地膜と前記第2の下地膜の表面に塩素含有ガスを吸着させる前処理を行う工程と、
その後、前記塩素含有ガスを停止し、前記被処理基板を所定温度に加熱しつつ、前記前処理工程が施された前記第1の下地膜と前記第2の下地膜上に、Si原料ガスおよび窒化ガスを用いて、ALDまたはCVDによりシリコン窒化膜を成膜する工程と
を有し、
前記第1の下地膜は前記塩素含有ガスの吸着性が相対的に高く、前記第2の下地膜は前記塩素含有ガスの吸着性が相対的に低く、
前記塩素含有ガスは前記Si原料ガスに対する吸着阻害効果を有することを特徴とする窒化膜の形成方法。 - 前記窒化膜を成膜する工程をALDにより行う場合に、最初に成膜原料を供給することを特徴とする請求項1に記載の窒化膜の形成方法。
- 前記第1の下地膜がシリコン酸化膜であり、前記第2の下地膜がシリコン窒化膜であることを特徴とする請求項1または請求項2に記載の窒化膜の形成方法。
- 前記シリコン窒化膜を成膜する際に用いる前記Si原料ガスは、ジクロロシラン、モノクロロシラン、トリクロロシラン、シリコンテトラクロライド、ヘキサクロロジシラン、モノシラン、ジシラン、有機シラン系化合物のいずれかであることを特徴とする請求項1から請求項3のいずれか1項に記載の窒化膜の形成方法。
- 前記窒化膜を成膜する工程は、ALDの場合に400〜700℃、CVDの場合に600〜800℃で行うことを特徴とする請求項1から請求項4のいずれか1項に記載の窒化膜の形成方法。
- 前記前処理工程は、200〜800℃で行うことを特徴とする請求項1から請求項5のいずれか1項に記載の窒化膜の形成方法。
- 前記前処理工程と、前記窒化膜を成膜する工程は同一装置内で連続的に実施することを特徴とする請求項1から請求項6のいずれか1項に記載の窒化膜の形成方法。
- 前記前処理工程と、前記窒化膜を成膜する工程は、同じ温度で行われることを特徴とする請求項7に記載の窒化膜の形成方法。
- 前記前処理工程に用いられる前記塩素含有ガスは、Cl2ガス、HClガス、BCl3ガスから選択された少なくとも1種のガスであることを特徴とする請求項1から請求項8のいずれか1項に記載の窒化膜の形成方法。
- 前記窒化膜の成膜に用いられる前記窒化ガスは、アンモニアガス、またはヒドラジンガス、またはヒドラジンの誘導体のガスであることを特徴とする請求項1から請求項9のいずれか1項に記載の窒化膜の形成方法。
- コンピュータ上で動作し、処理装置を制御するためのプログラムが記憶された記憶媒体であって、前記プログラムは、実行時に、請求項1から請求項10のいずれかの窒化膜の形成方法が行われるように、コンピュータに前記処理装置を制御させることを特徴とする記憶媒体。
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Publication number | Priority date | Publication date | Assignee | Title |
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