JP6502779B2 - ガス供給系のバルブのリークを検査する方法 - Google Patents
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- 238000000034 method Methods 0.000 title claims description 289
- 238000012545 processing Methods 0.000 claims description 158
- 238000007689 inspection Methods 0.000 claims description 73
- 239000000758 substrate Substances 0.000 claims description 48
- 238000011144 upstream manufacturing Methods 0.000 claims description 38
- 238000012360 testing method Methods 0.000 claims description 12
- 238000012544 monitoring process Methods 0.000 claims description 8
- 239000007789 gas Substances 0.000 description 243
- 230000010354 integration Effects 0.000 description 40
- 238000009792 diffusion process Methods 0.000 description 22
- 239000003507 refrigerant Substances 0.000 description 9
- 229910052782 aluminium Inorganic materials 0.000 description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 6
- 239000000463 material Substances 0.000 description 4
- 101001090150 Equus caballus Sperm histone P2a Proteins 0.000 description 3
- RZVAJINKPMORJF-UHFFFAOYSA-N Acetaminophen Chemical group CC(=O)NC1=CC=C(O)C=C1 RZVAJINKPMORJF-UHFFFAOYSA-N 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 238000010926 purge Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- 101100260020 Caenorhabditis elegans mls-1 gene Proteins 0.000 description 1
- 101001016600 Equus caballus Sperm histone P2b Proteins 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 238000005524 ceramic coating Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000009616 inductively coupled plasma Methods 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910003465 moissanite Inorganic materials 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 238000009832 plasma treatment Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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- G01M3/2876—Investigating fluid-tightness of structures by using fluid or vacuum by measuring rate of loss or gain of fluid, e.g. by pressure-responsive devices, by flow detectors for pipes, cables or tubes; for pipe joints or seals; for valves ; for welds for valves
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- C—CHEMISTRY; METALLURGY
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45561—Gas plumbing upstream of the reaction chamber
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
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- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
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Description
ガス拡散室36a(1)は、上述した軸線上に設けられており、鉛直方向から視たときに円形の平面形状を有し得る。ガス拡散室36a(2)は、ガス拡散室36a(1)の外側で環状に延在している。また、ガス拡散室36a(3)は、ガス拡散室36a(2)の外側で環状に延在している。
Claims (5)
- 基板処理装置の処理容器にガスを供給するためのガス供給系のバルブのリークを検査する方法であって、
前記ガス供給系は、
複数のガスソースにそれぞれ接続された複数の第1の配管と、
前記複数の第1の配管にそれぞれ設けられた複数の第1のバルブと、
前記複数の第1のバルブよりも下流側において前記複数の第1の配管にそれぞれに設けられた複数の第2のバルブと、
前記複数の第2のバルブの下流において前記複数の第1の配管に接続された第2の配管と、
前記第2の配管に接続された第3の配管と、
前記第3の配管から分岐する複数の第4の配管と、
前記複数の第4の配管にそれぞれ設けられた複数の流量制御器と、
前記複数の流量制御器の下流側において前記複数の第4の配管にそれぞれ設けられた複数の第3のバルブと、
排気装置に接続された排気管と、
前記排気管に設けられた第4のバルブと、
前記排気装置及び前記第4のバルブの上流において前記排気管に接続し、且つ、前記第2の配管に接続する第5の配管と、
を備え、
該方法は、
前記複数の第1の配管の内部、前記第2の配管の内部、前記第3の配管の内部、及び前記複数の第4の配管の内部の排気を行う第1工程であり、前記複数の流量制御器それぞれのコントロールバルブ、前記複数の第2のバルブ、及び前記第4のバルブが開かれ、前記複数の第1のバルブ、及び前記複数の第3のバルブが閉じられた排気状態が形成される、該第1工程と、
前記複数の第1のバルブ、前記複数の第3のバルブ、及び、前記第4のバルブが閉じられ、前記複数の第2のバルブのうち一以上の第2のバルブ又は前記複数の第2のバルブが開かれた第1の検査状態を形成する第2工程と、
前記排気装置及び前記第4のバルブの上流において前記排気管に設けられた圧力計、又は前記複数の流量制御器のうち一つの流量制御器の圧力計により、圧力上昇を監視する第3工程と、
前記複数の第2のバルブ、前記複数の第3のバルブ、及び、前記第4のバルブが閉じられ、前記複数の第1のバルブのうち前記一以上の第2のバルブの上流に設けられた一以上の第1のバルブ又は前記複数の第1のバルブが開かれた第2の検査状態を形成する第4工程と、
前記排気装置及び前記第4のバルブの上流において前記排気管に設けられた前記圧力計、又は前記複数の流量制御器のうち一つの流量制御器の圧力計により、圧力上昇を監視する第5工程と、
を含む方法。 - 前記第2工程において形成される前記第1の検査状態では、前記複数の第2のバルブが開かれ、
前記第4工程において形成される前記第2の検査状態では、前記複数の第1のバルブが開かれる、
請求項1に記載の方法。 - 前記第3工程において圧力上昇が検出された場合に、前記複数の第1のバルブから順に選択される検査対象の第1のバルブのリークを検査する工程を更に含み、
検査対象の第1のバルブのリークを検査する前記工程は、前記複数の第1のバルブ、前記複数の第3のバルブ、前記第4のバルブ、及び前記複数の第2のバルブのうち前記検査対象の第1のバルブの下流に設けられた第2のバルブ以外の第2のバルブが閉じられた状態で、前記排気装置及び前記第4のバルブの上流において前記排気管に設けられた前記圧力計、又は前記複数の流量制御器のうち一つの流量制御器の圧力計により、圧力上昇を監視することを含む、
請求項2に記載の方法。 - 前記第5工程において圧力上昇が検出された場合に、前記複数の第2のバルブから順に選択される検査対象の第2のバルブのリークを検査する工程を更に含み、
検査対象の第2のバルブのリークを検査する前記工程は、前記複数の第2のバルブ、前記複数の第3のバルブ、前記第4のバルブ、及び前記複数の第1のバルブのうち前記検査対象の第2のバルブの上流に設けられた第1のバルブ以外の第1のバルブが閉じられた状態で、前記排気装置及び前記第4のバルブの上流において前記排気管に設けられた前記圧力計、又は前記複数の流量制御器のうち一つの流量制御器の圧力計により、圧力上昇を監視することを含む、
請求項2又は3に記載の方法。 - 前記ガス供給系は、
複数の別のガスソースにそれぞれ接続された複数の別の第1の配管と、
複数の別の第1の配管のそれぞれに設けられた複数の別の第1のバルブと、
前記複数の別の第1のバルブよりも下流側において前記複数の別の第1の配管のそれぞれに設けられた複数の別の第2のバルブと、
前記複数の別の第2のバルブの下流において前記複数の別の第1の配管に接続された別の第2の配管と、
前記別の第2の配管に接続された別の第3の配管と、
前記別の第3の配管から分岐する複数の別の第4の配管と、
前記複数の別の第4の配管にそれぞれ設けられた複数の別の流量制御器と、
前記複数の別の流量制御器の下流側において前記複数の別の第4の配管にそれぞれ設けられた複数の別の第3のバルブと、
前記排気装置及び前記第4のバルブの上流において前記排気管に接続し、且つ、前記別の第2の配管に接続する別の第5の配管と、
前記第5の配管に設けられた第5のバルブと、
前記別の第5の配管に設けられた別の第5のバルブと、
を更に備え、
該方法は、前記別の第5のバルブが閉じられた状態で、前記複数の別のガスソースのうち一以上のガスソースからガスを前記基板処理装置に供給する工程を更に含み、
ガスを前記基板処理装置に供給する前記工程の実行中に、前記第1工程、前記第2工程、前記第3工程、前記第4工程、及び前記第5工程が実行される、
請求項1〜4の何れか一項に記載の方法。
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JP2015149699A JP6502779B2 (ja) | 2015-07-29 | 2015-07-29 | ガス供給系のバルブのリークを検査する方法 |
KR1020177037006A KR102583041B1 (ko) | 2015-07-29 | 2016-07-15 | 가스 공급계의 밸브의 누출을 검사하는 방법 |
US15/739,027 US10533916B2 (en) | 2015-07-29 | 2016-07-15 | Method for inspecting for leaks in gas supply system valves |
PCT/JP2016/071054 WO2017018257A1 (ja) | 2015-07-29 | 2016-07-15 | ガス供給系のバルブのリークを検査する方法 |
CN201680037263.7A CN107709953B (zh) | 2015-07-29 | 2016-07-15 | 检查气体供给系统的阀泄漏的方法 |
TW105123508A TWI688726B (zh) | 2015-07-29 | 2016-07-26 | 氣體供給系統之閥體洩漏的檢查方法 |
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