KR100799735B1 - 금속 산화물 형성 방법 및 이를 수행하기 위한 장치 - Google Patents
금속 산화물 형성 방법 및 이를 수행하기 위한 장치 Download PDFInfo
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Abstract
Description
Claims (25)
- ⅰ) 기판 상에 금속 전구체 막을 형성하기 위하여 상기 기판의 표면을 따라 흐르도록 금속 전구체 가스를 공급하는 단계;ⅱ) 상기 기판이 위치된 공간을 산소 분위기로 형성하기 위하여 상기 기판 상으로 산소 가스를 공급하는 단계;ⅲ) 상기 금속 전구체 막을 산화시키기 위하여 상기 금속 전구체 막의 표면을 따라 흐르도록 오존을 포함하는 산화 가스를 공급하는 단계;ⅳ) 상기 금속 전구체 막과 상기 산화 가스 사이의 반응을 촉진시키기 위하여 상기 금속 전구체 막의 표면을 따라 흐르는 산화 가스에 RF(Radio Frequency) 파워를 인가하는 단계;ⅴ) 상기 기판을 기 설정된 각도만큼 회전시키는 단계; 및ⅵ) 상기 ⅰ) 내지 ⅳ) 단계들을 반복적으로 수행하는 단계를 포함하는 금속 산화물 형성 방법.
- 제1항에 있어서, 상기 금속 전구체 가스는 Zr, Hf, Al, Ta, Ti, La, Sr, Ba, Pr 및 Pb로 이루어진 군으로부터 선택된 어느 하나를 포함하는 것을 특징으로 하는 금속 산화물 형성 방법.
- 제1항에 있어서, 상기 산화 가스의 오존 농도는 100 내지 1000g/m3 인 것을 특징으로 하는 금속 산화물 형성 방법.
- 제1항에 있어서, 상기 산화 가스를 공급하는 단계와 상기 RF 파워를 인가하는 단계는 실질적으로 동시에 수행되는 것을 특징으로 하는 금속 산화물 형성 방 법.
- 삭제
- 청구항 6은(는) 설정등록료 납부시 포기되었습니다.제1항에 있어서, 상기 산소 가스는 0.1 내지 3초 동안 공급되는 것을 특징으로 하는 금속 산화물 형성 방법.
- 청구항 7은(는) 설정등록료 납부시 포기되었습니다.제1항에 있어서, 상기 금속 전구체 막을 형성한 후 상기 기판이 위치된 공정 챔버 내부를 일차 퍼지하는 단계와, 상기 금속 산화물을 형성한 후 상기 공정 챔버 내부를 이차 퍼지하는 단계를 더 포함하는 것을 특징으로 하는 금속 산화물 형성 방법.
- 청구항 8은(는) 설정등록료 납부시 포기되었습니다.제1항에 있어서, 상기 금속 전구체 가스 및 상기 산화 가스는 상기 기판의 제1 가장자리 부위로부터 상기 제1 가장자리 부위에 대향하는 제2 가장자리 부위를 향하여 흐르는 것을 특징으로 하는 금속 산화물 형성 방법.
- 제1항에 있어서, 상기 기판이 위치된 공정 챔버의 내부는 0.1 내지 10Torr의 압력으로 유지되며, 상기 기판은 상온 내지 450℃의 온도로 유지되는 것을 특징으로 하는 금속 산화물 형성 방법.
- 삭제
- 삭제
- 기판을 지지하기 위한 지지영역과 상기 지지영역을 둘러싸는 주변영역을 갖는 기판 스테이지;상기 기판 스테이지와 연결되어 상기 기판을 회전시키기 위하여 상기 기판 스테이지를 회전시키는 구동부;상기 기판 스테이지의 주변 영역상에 배치되어 상기 기판이 위치되는 공간을 한정하고, 상기 기판 상에 금속 전구체 막을 형성하기 위하여 상기 기판의 표면을 따라 금속 전구체 가스를 공급하며 상기 금속 전구체 막을 산화시키기 위하여 상기 금속 전구체 막의 표면을 따라 오존을 포함하는 산화 가스를 공급하기 위한 가스 도입구를 갖는 챔버;상기 챔버와 연결되며, 상기 기판 상으로 상기 금속 전구체 가스를 공급하기 위한 제1 가스 공급부;상기 챔버와 연결되며, 상기 기판 상으로 상기 산화 가스를 공급하기 위한 제2 가스 공급부;상기 챔버와 연결되며, 상기 산화 가스를 공급하기 전에 상기 기판이 위치된 공간을 산소 분위기로 형성하기 위하여 상기 기판 상으로 산소 가스를 공급하기 위한 제3 가스 공급부; 및상기 챔버와 연결되며 상기 금속 전구체 막과 상기 산화 가스 사이의 반응을 촉진시키기 위하여 상기 금속 전구체 막의 표면을 따라 흐르는 산화 가스에 RF 파워를 인가하기 위한 RF 파워 소스를 포함하는 금속 산화물 형성 장치.
- 삭제
- 제12항에 있어서, 상기 제2 가스 공급부는 상기 오존을 형성하기 위한 오존 발생기를 포함하는 것을 특징으로 하는 금속 산화물 형성 장치.
- 청구항 15은(는) 설정등록료 납부시 포기되었습니다.제14항에 있어서, 상기 산화 가스의 오존 농도는 100 내지 1000g/m3 인 것을 특징으로 하는 금속 산화물 형성 장치.
- 삭제
- 청구항 17은(는) 설정등록료 납부시 포기되었습니다.제12항에 있어서, 상기 금속 전구체 막 상으로 일차 퍼지 가스를 공급하고 상기 금속 산화물 상으로 이차 퍼지 가스를 공급하기 위한 제4 가스 공급부를 더 포함하는 것을 특징으로 하는 금속 산화물 형성 장치.
- 제12항에 있어서, 상기 챔버는 상기 스테이지의 주변영역 상에 배치된 커버와 상기 스테이지 상에 지지된 기판과 마주하도록 상기 커버에 결합된 RF 전극을 포함하는 것을 특징으로 하는 금속 산화물 형성 장치.
- 제18항에 있어서, 상기 커버는 상기 스테이지의 상부에 배치된 천장부와 상기 천정부로부터 하방으로 연장하며 상기 스테이지의 주변영역 상에 배치된 링 형태의 돌출부를 포함하는 것을 특징으로 하는 금속 산화물 형성 장치.
- 제19항에 있어서, 상기 RF 전극은 상기 천장부의 하부면 상에 배치되며 디스크 형상을 갖는 것을 특징으로 하는 금속 산화물 형성 장치.
- 제20항에 있어서, 상기 가스 도입구는 상기 돌출부의 내측면과 상기 RF 전극의 외측면에 의해 한정되며, 상기 RF 전극은 상기 가스 도입구와 연통하며 상기 금속 전구체 가스 및 상기 산화 가스를 각각 공급하기 위하여 유로들을 갖는 것을 특징으로 하는 금속 산화물 형성 장치.
- 청구항 22은(는) 설정등록료 납부시 포기되었습니다.제21항에 있어서, 각각의 유로들은 상기 RF 전극의 외측면을 향하여 확장되는 것을 특징으로 하는 금속 산화물 형성 장치.
- 청구항 23은(는) 설정등록료 납부시 포기되었습니다.
- 청구항 24은(는) 설정등록료 납부시 포기되었습니다.제12항에 있어서, 상기 챔버와 연결되며, 상기 금속 전구체 가스, 상기 산화 가스 및 상기 반응에 의해 발생된 반응 부산물들을 배출시키기 위한 배기부를 더 포함하는 것을 특징으로 하는 금속 산화물 형성 장치.
- 삭제
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KR1020060064250A KR100799735B1 (ko) | 2006-07-10 | 2006-07-10 | 금속 산화물 형성 방법 및 이를 수행하기 위한 장치 |
US11/775,111 US7708969B2 (en) | 2006-07-10 | 2007-07-09 | Method of forming metal oxide |
US12/729,973 US20100170441A1 (en) | 2006-07-10 | 2010-03-23 | Method of Forming Metal Oxide and Apparatus for Performing the Same |
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JP2002371359A (ja) | 2001-06-14 | 2002-12-26 | Samsung Electronics Co Ltd | β−ジケトンの配位子を有する有機金属錯体を利用した原子層蒸着方法 |
KR20030003320A (ko) * | 2001-06-30 | 2003-01-10 | 주식회사 하이닉스반도체 | 오존플라즈마처리를 이용한 탄탈륨산화막의 형성 방법 |
KR20060086241A (ko) * | 2005-01-26 | 2006-07-31 | 주식회사 아이피에스 | 플라즈마 ald 박막증착방법 |
KR20070038348A (ko) * | 2005-10-05 | 2007-04-10 | 주식회사 하이닉스반도체 | 배치 타입의 원자층 증착장비 및 이를 이용한 반도체소자의 원자층 증착방법 |
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US7708969B2 (en) | 2010-05-04 |
US20080056975A1 (en) | 2008-03-06 |
KR20080005656A (ko) | 2008-01-15 |
US20100170441A1 (en) | 2010-07-08 |
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