JP5291928B2 - 酸化物半導体装置およびその製造方法 - Google Patents
酸化物半導体装置およびその製造方法 Download PDFInfo
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- JP5291928B2 JP5291928B2 JP2007333865A JP2007333865A JP5291928B2 JP 5291928 B2 JP5291928 B2 JP 5291928B2 JP 2007333865 A JP2007333865 A JP 2007333865A JP 2007333865 A JP2007333865 A JP 2007333865A JP 5291928 B2 JP5291928 B2 JP 5291928B2
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- selenium
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- 239000004065 semiconductor Substances 0.000 title claims description 84
- 238000004519 manufacturing process Methods 0.000 title claims description 16
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 62
- 238000000034 method Methods 0.000 claims description 52
- 239000010410 layer Substances 0.000 claims description 51
- 239000011787 zinc oxide Substances 0.000 claims description 31
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 26
- 239000000758 substrate Substances 0.000 claims description 25
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 claims description 21
- 229910052760 oxygen Inorganic materials 0.000 claims description 21
- 239000001301 oxygen Substances 0.000 claims description 21
- 229910052717 sulfur Inorganic materials 0.000 claims description 21
- 239000011593 sulfur Substances 0.000 claims description 21
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 claims description 20
- 229910052711 selenium Inorganic materials 0.000 claims description 20
- 239000011669 selenium Substances 0.000 claims description 20
- 238000004544 sputter deposition Methods 0.000 claims description 20
- 238000011282 treatment Methods 0.000 claims description 20
- 230000007547 defect Effects 0.000 claims description 16
- 239000002335 surface treatment layer Substances 0.000 claims description 12
- 238000007740 vapor deposition Methods 0.000 claims description 11
- RWSOTUBLDIXVET-UHFFFAOYSA-N Dihydrogen sulfide Chemical group S RWSOTUBLDIXVET-UHFFFAOYSA-N 0.000 claims description 7
- 229910000037 hydrogen sulfide Inorganic materials 0.000 claims description 7
- UYJXRRSPUVSSMN-UHFFFAOYSA-P ammonium sulfide Chemical compound [NH4+].[NH4+].[S-2] UYJXRRSPUVSSMN-UHFFFAOYSA-P 0.000 claims description 6
- 238000005229 chemical vapour deposition Methods 0.000 claims description 6
- 150000001875 compounds Chemical class 0.000 claims description 4
- 239000003595 mist Substances 0.000 claims description 4
- 238000001451 molecular beam epitaxy Methods 0.000 claims description 4
- QYHFIVBSNOWOCQ-UHFFFAOYSA-N selenic acid Chemical compound O[Se](O)(=O)=O QYHFIVBSNOWOCQ-UHFFFAOYSA-N 0.000 claims description 4
- 239000012808 vapor phase Substances 0.000 claims description 4
- 238000010884 ion-beam technique Methods 0.000 claims description 3
- 239000007791 liquid phase Substances 0.000 claims description 3
- 239000004020 conductor Substances 0.000 claims description 2
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims 6
- 239000011701 zinc Substances 0.000 claims 6
- 229910052725 zinc Inorganic materials 0.000 claims 6
- 238000000151 deposition Methods 0.000 claims 5
- DNJIEGIFACGWOD-UHFFFAOYSA-N ethanethiol Chemical compound CCS DNJIEGIFACGWOD-UHFFFAOYSA-N 0.000 claims 4
- ZERULLAPCVRMCO-UHFFFAOYSA-N sulfure de di n-propyle Natural products CCCSCCC ZERULLAPCVRMCO-UHFFFAOYSA-N 0.000 claims 4
- MBNVSWHUJDDZRH-UHFFFAOYSA-N 2-methylthiirane Chemical compound CC1CS1 MBNVSWHUJDDZRH-UHFFFAOYSA-N 0.000 claims 2
- 239000002253 acid Substances 0.000 claims 2
- 150000007513 acids Chemical class 0.000 claims 2
- VTXVGVNLYGSIAR-UHFFFAOYSA-N decane-1-thiol Chemical compound CCCCCCCCCCS VTXVGVNLYGSIAR-UHFFFAOYSA-N 0.000 claims 2
- WNAHIZMDSQCWRP-UHFFFAOYSA-N dodecane-1-thiol Chemical compound CCCCCCCCCCCCS WNAHIZMDSQCWRP-UHFFFAOYSA-N 0.000 claims 2
- IOPLHGOSNCJOOO-UHFFFAOYSA-N methyl 3,4-diaminobenzoate Chemical compound COC(=O)C1=CC=C(N)C(N)=C1 IOPLHGOSNCJOOO-UHFFFAOYSA-N 0.000 claims 2
- 238000000059 patterning Methods 0.000 claims 2
- 150000003254 radicals Chemical class 0.000 claims 2
- 229940065287 selenium compound Drugs 0.000 claims 2
- 150000003343 selenium compounds Chemical class 0.000 claims 2
- VIDTVPHHDGRGAF-UHFFFAOYSA-N selenium sulfide Chemical compound [Se]=S VIDTVPHHDGRGAF-UHFFFAOYSA-N 0.000 claims 2
- 229960005265 selenium sulfide Drugs 0.000 claims 2
- 230000005684 electric field Effects 0.000 claims 1
- 230000001590 oxidative effect Effects 0.000 claims 1
- 239000010408 film Substances 0.000 description 59
- 239000010409 thin film Substances 0.000 description 27
- 238000004381 surface treatment Methods 0.000 description 26
- 239000004973 liquid crystal related substance Substances 0.000 description 13
- 239000007789 gas Substances 0.000 description 11
- 238000002161 passivation Methods 0.000 description 10
- 230000008569 process Effects 0.000 description 10
- 239000013078 crystal Substances 0.000 description 9
- 239000000463 material Substances 0.000 description 8
- 238000012545 processing Methods 0.000 description 8
- 230000000694 effects Effects 0.000 description 6
- 229910052738 indium Inorganic materials 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 238000003672 processing method Methods 0.000 description 5
- 230000006870 function Effects 0.000 description 4
- 229910052733 gallium Inorganic materials 0.000 description 4
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 4
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000005566 electron beam evaporation Methods 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 3
- PNHVEGMHOXTHMW-UHFFFAOYSA-N magnesium;zinc;oxygen(2-) Chemical compound [O-2].[O-2].[Mg+2].[Zn+2] PNHVEGMHOXTHMW-UHFFFAOYSA-N 0.000 description 3
- 239000012071 phase Substances 0.000 description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- 230000000704 physical effect Effects 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- 238000004549 pulsed laser deposition Methods 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- 208000029523 Interstitial Lung disease Diseases 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- FMRLDPWIRHBCCC-UHFFFAOYSA-L Zinc carbonate Chemical compound [Zn+2].[O-]C([O-])=O FMRLDPWIRHBCCC-UHFFFAOYSA-L 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 230000007613 environmental effect Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000002438 flame photometric detection Methods 0.000 description 2
- -1 gallium arsenide compound Chemical class 0.000 description 2
- 230000036541 health Effects 0.000 description 2
- 238000007654 immersion Methods 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
- KYKLWYKWCAYAJY-UHFFFAOYSA-N oxotin;zinc Chemical compound [Zn].[Sn]=O KYKLWYKWCAYAJY-UHFFFAOYSA-N 0.000 description 2
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 230000000630 rising effect Effects 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 230000005533 two-dimensional electron gas Effects 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 2
- 229910052984 zinc sulfide Inorganic materials 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- KKEYTLVFLSCKDE-UHFFFAOYSA-N [Sn+2]=O.[O-2].[Zn+2].[O-2] Chemical compound [Sn+2]=O.[O-2].[Zn+2].[O-2] KKEYTLVFLSCKDE-UHFFFAOYSA-N 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 238000001505 atmospheric-pressure chemical vapour deposition Methods 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000012937 correction Methods 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 230000005264 electron capture Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 229910000449 hafnium oxide Inorganic materials 0.000 description 1
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000003801 milling Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 150000007524 organic acids Chemical class 0.000 description 1
- 238000009832 plasma treatment Methods 0.000 description 1
- 239000010970 precious metal Substances 0.000 description 1
- 238000003908 quality control method Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 229910052950 sphalerite Inorganic materials 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1222—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer
- H01L27/1225—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/4908—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET for thin film semiconductor, e.g. gate of TFT
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78696—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel
Description
本発明の実施の形態1によるディスプレイ用薄膜トランジスタの構造と製造方法を図2〜図5を用いて説明する。図2と図3はボトムゲート型薄膜トランジスタの断面図とその製造工程の一例を示すフロー図、図4と5トップゲート型薄膜トランジスタの断面図とその製造工程の一例を示すフロー図、図6と図8はそれぞれの効果を示すためのしきい電位シフトの経時変化を説明するグラフ図、図7と図9はそれぞれをデバイス適用するための回路の簡単な模式図である。
a)気相法の場合:例えば硫化水素ガスを真空槽中で約50Paの圧力で10分程度保持し、一旦真空排気する。この時、硫化水素ガスの代わりにその他の硫黄を含む材料ガスやセレンを含む材料ガスを用いても構わない。十分な効果を得るために材料ガスによっては80℃から200℃程度の熱処理が必要な場合もある。また、真空保持の代わりに、0.1〜10Pa程度の圧力でプラズマ処理(ラジカルシャワーやECRプラズマ、イオンビーム、硫黄を含有するターゲットを用いたスパッタリング等でも良い)を行うことでも原理的にほぼ同様の効果が期待できる。さらに、スループットは落ちるが、超高真空装置を用いて硫黄やセレンの分子ビームをゲート絶縁膜4表面に照射しても、良質な表面パッシベーションが達成される。
b)液相法の場合:例えば、硫化アンモニウム溶液によりゲート絶縁膜4の表面を浸漬による処理を行った後、流水洗浄、乾燥を行う。硫化アンモニウムの他にもその他の硫黄を含む溶液やセレンを含む溶液を用いることによりほぼ同様な表面パッシベーションを行うことが可能である。処理溶液によっては有効な処理を行うために50℃から90℃程度の高温条件が必要な場合もある。また、ウエット処理を嫌うプロセスの場合には溶媒をアルコールやアセトンに変更し、ミスト処理を用いることにより上記の硫黄及びセレンを含む溶液の霧を処理表面に噴霧、乾燥させることでも同様の効果が得られる。
(実施の形態2)
本発明の実施の形態2によるHEMT(High Electron Mobility Transistor)構造と製造方法について図10を用いて説明する。
2…ゲート電極、
3…ゲート絶縁膜、
4…ソース・ドレイン電極層、
5…本発明の表面処理、
6…本発明の表面処理層、
7…酸化物半導体層、
8…パッシベーション層、
9…ソース・ドレイン電極レジストパターン、
10…ゲート電極レジストパターン、
11…支持基板、
12…ソース・ドレイン電極層、
13…酸化物半導体層、
14…本発明の表面処理、
15…本発明の表面処理層、
16…ゲート絶縁膜、
17…ゲート電極層、
18…パッシベーション層、
19…ゲート電極レジストパターン、
21…半導体基板、
22…二次元電子ガス層、
23…酸化物半導体活性層、
24…ゲート絶縁膜、
25…ゲート電極層、
26…ゲート電極レジストパターン、
27…ゲート加工処理、
28…リフトオフ用レジストパターン、
29…ソース・ドレイン電極層、
30…リフトオフプロセス、
31…本発明の表面処理、
32…本発明の表面処理層。
Claims (11)
- 基板上に設けられ亜鉛を含む酸化物半導体から構成されたチャネル層と、
前記チャネル層を挟むように該チャネル層の両端部に接して設けられたソース・ドレイン電極層と、
前記チャネル層の一表面と第1の面で接して設けられたゲート絶縁膜と、
前記ゲート絶縁膜の前記第1の面と対向する第2の面に設けられ、前記チャネル層に前記ゲート絶縁膜を介して電界を与えるゲート電極と、を有し、
前記ゲート絶縁膜と前記チャネル層とが接触する界面に、硫黄、またはセレンの少なく
とも一つを含み、前記界面近傍に形成される酸素欠陥を抑制する表面処理層を有することを特徴とする酸化物半導体装置。 - 前記表面処理層に含有する硫黄、またはセレンの原子濃度が、1016cm−3以上で1020cm−3以下の範囲内にあることを特徴とする請求項1に記載の酸化物半導体装置。
- 前記チャネル層が、少なくとも亜鉛を含有する酸化物半導体、またはこれらの酸化亜鉛系酸化物半導体の数種類を組み合わせた積層膜であることを特徴とする請求項1に記載の酸化物半導体装置。
- 前記ゲート電極が前記基板表面上に設けられ、前記ソース・ドレイン電極層が前記基板に対して前記ゲート電極より遠い側に設けられたボトムゲート型構造であることを特徴とする請求項1に記載の酸化物半導体装置。
- 前記ソース・ドレイン電極層が前記基板表面上に設けられ、前記ゲート電極が前記基板に対して前記ソース・ドレイン電極層より遠い側に設けられたトップゲート型構造であることを特徴とする請求項1に記載の酸化物半導体装置。
- 基板上に所望の形状を有するゲート電極を形成する工程と、
前記ゲート電極および前記基板の表面を覆うようにゲート絶縁膜を堆積する工程と、
前記ゲート絶縁膜上に導電体からなるソース・ドレイン電極層を堆積する工程と、
前記堆積したソース・ドレイン電極層をパターニングし前記ゲート電極上に開口部を形
成する工程と、
前記開口部を通して前記ゲート絶縁膜の表面に、硫黄またはセレンの少なくとも一つを
導入し表面処理層を形成する工程と、
前記表面処理層の表面を少なくとも覆うように亜鉛を含む酸化物半導体を堆積しチャネ
ル層を形成する工程とを有し、
前記表面処理層は、前記ゲート絶縁膜と前記チャネル層とが接触する界面近傍に形成される酸素欠陥を抑制することを特徴とする酸化物半導体装置の製造方法。 - 前記ゲート絶縁膜表面上へ硫黄またはセレンの少なくとも一つを導入する手段が、それらの化合物による分子ビーム照射、プラズマ照射、イオンビーム照射、ラジカル照射、気相処理、ミスト処理、液相処理のいずれかであり、
前記亜鉛を含む酸化物半導体からなるチャネル層を形成する手段が、スパッタ法、化学気相成長(CVD:Chemical Vapor Deposition)法、分子ビーム成長(MBE:Molecular Beam Epitaxy)法、反応性蒸着法のいずれかであることを特徴とする請求項6に記載の酸化物半導体装置の製造方法。 - 前記表面処理層の形成に用いる硫黄、またはセレンの化合物が、硫化水素、硫化アンモニウム、エタンチオール、デカンチオール、ドデカンチオール、エチルメチルスルフィド、ジプロピルスルフィド、プロピレンスルフィド、硫化セレン、セレン酸、亜セレン酸のいずれか一つであることを特徴とする請求項6に記載の酸化物半導体装置の製造方法。
- 基板上に所望の形状を有するソース・ドレイン電極層を形成する工程と、
前記ソース・ドレイン電極層および前記基板の表面を覆うように亜鉛を含む酸化物半導
体を堆積する工程と、
前記酸化物半導体の表面に、硫黄またはセレンの少なくとも一つを導入し表面処理層を
形成する工程と、
前記表面処理層を有する酸化物半導体上に、ゲート絶縁膜を堆積する工程と、
前記ゲート絶縁膜上にさらにゲート電極膜を堆積し該ゲート電極膜をパターニングして
ゲート電極を形成する工程とを有し、
前記表面処理層は、前記ゲート絶縁膜と前記酸化物半導体とが接触する界面近傍に形成される酸素欠陥を抑制することを特徴とする酸化物半導体装置の製造方法。 - 前記ゲート絶縁膜表面上へ硫黄またはセレンの少なくとも一つを導入する手段が、それらの化合物による分子ビーム照射、プラズマ照射、イオンビーム照射、ラジカル照射、気相処理、ミスト処理、液相処理のいずれかであり、
前記亜鉛を含む酸化物半導体からなるチャネル層を形成する手段が、スパッタ法、化学気相成長(CVD:Chemical Vapor Deposition)法、分子ビーム成長(MBE:Molecular Beam Epitaxy)法、反応性蒸着法のいずれかであることを特徴とする請求項9に記載の酸化物半導体装置の製造方法。 - 前記表面処理層の形成に用いる硫黄、またはセレンの化合物が、硫化水素、硫化アンモニウム、エタンチオール、デカンチオール、ドデカンチオール、エチルメチルスルフィド、ジプロピルスルフィド、プロピレンスルフィド、硫化セレン、セレン酸、亜セレン酸のいずれか一つであることを特徴とする請求項9に記載の酸化物半導体装置の製造方法。
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JP3851896B2 (ja) * | 2002-09-27 | 2006-11-29 | 株式会社東芝 | 半導体装置の製造方法 |
JP2004327857A (ja) * | 2003-04-25 | 2004-11-18 | Pioneer Electronic Corp | 有機トランジスタの製造方法および有機トランジスタ |
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CN101057333B (zh) * | 2004-11-10 | 2011-11-16 | 佳能株式会社 | 发光器件 |
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US7820495B2 (en) * | 2005-06-30 | 2010-10-26 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
JP4664771B2 (ja) * | 2005-08-11 | 2011-04-06 | 株式会社東芝 | 半導体装置およびその製造方法 |
JP4958253B2 (ja) * | 2005-09-02 | 2012-06-20 | 財団法人高知県産業振興センター | 薄膜トランジスタ |
US7906415B2 (en) * | 2006-07-28 | 2011-03-15 | Xerox Corporation | Device having zinc oxide semiconductor and indium/zinc electrode |
KR101345376B1 (ko) * | 2007-05-29 | 2013-12-24 | 삼성전자주식회사 | ZnO 계 박막 트랜지스터 및 그 제조방법 |
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KR101035771B1 (ko) | 2011-05-20 |
US20140175437A1 (en) | 2014-06-26 |
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US20090166616A1 (en) | 2009-07-02 |
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