KR101048965B1 - 유기 전계발광 표시장치 - Google Patents
유기 전계발광 표시장치 Download PDFInfo
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- KR101048965B1 KR101048965B1 KR1020090005528A KR20090005528A KR101048965B1 KR 101048965 B1 KR101048965 B1 KR 101048965B1 KR 1020090005528 A KR1020090005528 A KR 1020090005528A KR 20090005528 A KR20090005528 A KR 20090005528A KR 101048965 B1 KR101048965 B1 KR 101048965B1
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- Prior art keywords
- transistor
- thin film
- polysilicon
- layer
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- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 42
- 239000010409 thin film Substances 0.000 claims abstract description 41
- 229920005591 polysilicon Polymers 0.000 claims abstract description 39
- 239000004065 semiconductor Substances 0.000 claims description 17
- 238000000034 method Methods 0.000 claims description 16
- 239000010408 film Substances 0.000 claims 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 1
- 229910052710 silicon Inorganic materials 0.000 claims 1
- 239000010703 silicon Substances 0.000 claims 1
- 239000010410 layer Substances 0.000 description 54
- 239000000758 substrate Substances 0.000 description 10
- 238000004519 manufacturing process Methods 0.000 description 9
- 239000011159 matrix material Substances 0.000 description 5
- 229910021417 amorphous silicon Inorganic materials 0.000 description 4
- 239000003990 capacitor Substances 0.000 description 4
- 229910005265 GaInZnO Inorganic materials 0.000 description 3
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 3
- 238000005468 ion implantation Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 238000005538 encapsulation Methods 0.000 description 2
- 238000002161 passivation Methods 0.000 description 2
- 239000011241 protective layer Substances 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000011160 research Methods 0.000 description 1
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- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
- G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
- G09G3/22—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources
- G09G3/30—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels
- G09G3/32—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
- G09G3/3208—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED]
- G09G3/3225—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED] using an active matrix
- G09G3/3233—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED] using an active matrix with pixel circuitry controlling the current through the light-emitting element
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1222—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer
- H01L27/1225—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1251—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs comprising TFTs having a different architecture, e.g. top- and bottom gate TFTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
- H10K59/1213—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being TFTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/122—Pixel-defining structures or layers, e.g. banks
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2300/00—Aspects of the constitution of display devices
- G09G2300/04—Structural and physical details of display devices
- G09G2300/0404—Matrix technologies
- G09G2300/0417—Special arrangements specific to the use of low carrier mobility technology
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2300/00—Aspects of the constitution of display devices
- G09G2300/08—Active matrix structure, i.e. with use of active elements, inclusive of non-linear two terminal elements, in the pixels together with light emitting or modulating elements
- G09G2300/0809—Several active elements per pixel in active matrix panels
- G09G2300/0842—Several active elements per pixel in active matrix panels forming a memory circuit, e.g. a dynamic memory with one capacitor
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
Abstract
Description
Claims (8)
- 데이터선들, 주사선들의 교차부마다 위치되며, 복수의 박막트랜지스터 및 유기발광소자를 각각 포함하는 화소들과;복수의 박막트랜지스터를 포함하며, 상기 주사선들로 주사신호를 공급하는 주사 구동부와;복수의 박막트랜지스터를 포함하며, 상기 데이터선들로 데이터신호를 공급하는 데이터 구동부가 포함되며,상기 화소를 구성하는 복수의 트랜지스터 중 상기 유기발광소자와 연결된 제 1트랜지스터는 활성층이 산화물 반도체로 형성된 하부 게이트(inverted staggered bottom gate) 구조의 산화물 트랜지스터로 구현되고, 이외의 다른 박막트랜지스터들은 활성층이 폴리 실리콘으로 형성된 상부 게이트(top gate) 구조의 폴리 실리콘 트랜지스터로 구현되며,상기 산화물 트랜지스터의 게이트 전극은 상기 폴리 실리콘 트랜지스터의 게이트 전극과 동일한 층에 형성됨을 특징으로 하는 유기 전계발광 표시장치.
- 제 1항에 있어서,상기 제 1 트랜지스터는 각 화소의 구동 트랜지스터임을 특징으로 하는 유기 전계발광 표시장치.
- 제 1항에 있어서,상기 폴리 실리콘 트랜지스터로 구현되는 트랜지스터는 각 화소의 스위칭 트랜지스터 또는 주사 구동부, 데이터 구동부에 포함된 박막트랜지스터임을 특징으로 하는 유기 전계발광 표시장치.
- 삭제
- 제 1항에 있어서,상기 산화물 트랜지스터는,게이트 전극 및 상기 게이트 전극 상부에 형성된 게이트 절연막과;상기 게이트 전극과 중첩되는 게이트 절연막 상의 위치에 형성된 산화물 반도체층과;상기 산화물 반도체층과 전기적으로 연결되는 소스 및 드레인 전극을 포함하여 구성됨을 특징으로 하는 유기 전계발광 표시장치.
- 삭제
- 제 1항에 있어서,상기 폴리 실리콘 트랜지스터는,폴리 실리콘층 및 상기 폴리 실리콘층 상부에 형성된 절연막과;상기 폴리 실리콘층과 중첩되는 절연막 상의 위치에 형성된 게이트 전극과;상기 폴리 실리콘층과 전기적으로 연결되는 소스 및 드레인 전극을 포함하여 구성됨을 특징으로 하는 유기 전계발광 표시장치.
- 삭제
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
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KR1020090005528A KR101048965B1 (ko) | 2009-01-22 | 2009-01-22 | 유기 전계발광 표시장치 |
US12/691,907 US20100182223A1 (en) | 2009-01-22 | 2010-01-22 | Organic light emitting display device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
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KR1020090005528A KR101048965B1 (ko) | 2009-01-22 | 2009-01-22 | 유기 전계발광 표시장치 |
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Publication Number | Publication Date |
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KR20100086256A KR20100086256A (ko) | 2010-07-30 |
KR101048965B1 true KR101048965B1 (ko) | 2011-07-12 |
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KR1020090005528A KR101048965B1 (ko) | 2009-01-22 | 2009-01-22 | 유기 전계발광 표시장치 |
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US (1) | US20100182223A1 (ko) |
KR (1) | KR101048965B1 (ko) |
Cited By (8)
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US9954047B2 (en) | 2016-05-02 | 2018-04-24 | Samsung Display Co., Ltd. | Organic light emitting display apparatus and method of manufacturing the same |
US10199443B2 (en) | 2016-06-10 | 2019-02-05 | Samsung Display Co., Ltd. | Display device and fabricating method thereof |
US10340472B2 (en) | 2016-09-02 | 2019-07-02 | Samsung Display Co., Ltd. | Display device and method of manufacturing the same |
US10381426B2 (en) | 2016-07-01 | 2019-08-13 | Samsung Display Co., Ltd. | Pixel, stage circuit and organic light emitting display device having the pixel and the stage circuit |
US10482817B2 (en) | 2016-12-05 | 2019-11-19 | Samsung Display Co., Ltd. | Display device and method for driving the same |
US10706776B2 (en) | 2017-11-14 | 2020-07-07 | Samsung Display Co., Ltd. | Organic light-emitting display device |
US10878759B2 (en) | 2017-09-15 | 2020-12-29 | Samsung Display Co., Ltd. | Display device |
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KR20100086256A (ko) | 2010-07-30 |
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