JP6725317B2 - 表示装置 - Google Patents
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- Publication number
- JP6725317B2 JP6725317B2 JP2016100493A JP2016100493A JP6725317B2 JP 6725317 B2 JP6725317 B2 JP 6725317B2 JP 2016100493 A JP2016100493 A JP 2016100493A JP 2016100493 A JP2016100493 A JP 2016100493A JP 6725317 B2 JP6725317 B2 JP 6725317B2
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- Prior art keywords
- tft
- display device
- taos
- film
- layer
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- 239000000758 substrate Substances 0.000 claims description 34
- 229910017107 AlOx Inorganic materials 0.000 claims description 29
- 239000004973 liquid crystal related substance Substances 0.000 claims description 24
- 239000004065 semiconductor Substances 0.000 claims description 22
- 239000000463 material Substances 0.000 claims description 5
- 239000012212 insulator Substances 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 96
- 239000010408 film Substances 0.000 description 81
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 description 54
- 238000005530 etching Methods 0.000 description 22
- 235000006408 oxalic acid Nutrition 0.000 description 18
- 239000011229 interlayer Substances 0.000 description 10
- 230000002093 peripheral effect Effects 0.000 description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 8
- 238000000034 method Methods 0.000 description 8
- 229910052814 silicon oxide Inorganic materials 0.000 description 8
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 8
- 229910021417 amorphous silicon Inorganic materials 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 6
- 238000002161 passivation Methods 0.000 description 6
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 6
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 6
- 229910052782 aluminium Inorganic materials 0.000 description 5
- 238000001312 dry etching Methods 0.000 description 5
- 239000011159 matrix material Substances 0.000 description 5
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 4
- 229910004205 SiNX Inorganic materials 0.000 description 4
- 239000000243 solution Substances 0.000 description 4
- 239000010409 thin film Substances 0.000 description 4
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 3
- 125000004429 atom Chemical group 0.000 description 3
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- 229910052751 metal Inorganic materials 0.000 description 3
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- 239000000203 mixture Substances 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 239000011241 protective layer Substances 0.000 description 3
- 229910000838 Al alloy Inorganic materials 0.000 description 2
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 2
- 238000004833 X-ray photoelectron spectroscopy Methods 0.000 description 2
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- 229910000147 aluminium phosphate Inorganic materials 0.000 description 2
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- 150000001735 carboxylic acids Chemical class 0.000 description 2
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- 238000010586 diagram Methods 0.000 description 2
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- 229910052738 indium Inorganic materials 0.000 description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 238000002834 transmittance Methods 0.000 description 2
- 239000011787 zinc oxide Substances 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- -1 Zinc Oxide Nitride Chemical class 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910001195 gallium oxide Inorganic materials 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 230000005525 hole transport Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 230000009545 invasion Effects 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 125000004430 oxygen atom Chemical group O* 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 239000012466 permeate Substances 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000009751 slip forming Methods 0.000 description 1
- QEMXHQIAXOOASZ-UHFFFAOYSA-N tetramethylammonium Chemical compound C[N+](C)(C)C QEMXHQIAXOOASZ-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
- TYHJXGDMRRJCRY-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) tin(4+) Chemical compound [O-2].[Zn+2].[Sn+4].[In+3] TYHJXGDMRRJCRY-UHFFFAOYSA-N 0.000 description 1
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- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1222—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer
- H01L27/1225—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
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- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
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- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
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- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
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- H01L29/24—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only semiconductor materials not provided for in groups H01L29/16, H01L29/18, H01L29/20, H01L29/22
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- H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
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- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
- G02F1/13685—Top gates
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F2202/00—Materials and properties
- G02F2202/10—Materials and properties semiconductor
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F2202/00—Materials and properties
- G02F2202/10—Materials and properties semiconductor
- G02F2202/104—Materials and properties semiconductor poly-Si
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
- H10K59/1213—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being TFTs
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Description
Claims (13)
- 画素が形成された表示領域を有する基板を含む表示装置であって、
前記画素は酸化物半導体を用いた第1のTFTを含み、
前記酸化物半導体の上には絶縁物である酸化膜が形成され、前記酸化膜の上にゲート電極が形成され、
前記第1のTFTのドレインには、前記酸化膜に形成された第1のスルーホールを介して第1の電極が接続し、
前記第1のTFTのソースには、前記酸化膜に形成された第2のスルーホールを介して第2の電極が接続しており、
前記基板は、LTPSによる第2のTFTを備え、
前記基板は、前記表示領域の外側に駆動回路を含み、前記駆動回路は前記LTPSによる第2のTFTを含み、
前記第2のTFTのゲート電極と同層で、同じ材料によって、前記第1のTFTの遮光膜が形成されていることを特徴とする表示装置。 - 前記第1のTFTと前記第2のTFTはいずれもトップゲートのTFTであることを特徴とする請求項1に記載の表示装置。
- 前記表示領域は、さらに、前記LTPSによる第2のTFTを含むことを特徴とする請求項1に記載の表示装置。
- 前記駆動回路は、さらに前記酸化物半導体によるTFTを含むことを特徴とする請求項1に記載の表示装置。
- 前記第1のスルーホールと前記第2のスルーホールは、平面で視て、前記酸化膜内に形成されていることを特徴とする請求項1に記載の表示装置。
- 前記酸化膜に形成された前記第1のスルーホールの壁又は前記第2のスルーホールの壁は、前記酸化物半導体とは逆の側に第1のテーパθ1を持ち、前記酸化物半導体側に第2のテーパθ2を持ち、θ1>θ2であることを特徴とする請求項1乃至5に記載の表示装置。
- 前記酸化膜はAlOxであることを特徴とする請求項1乃至6のいずれか1項に記載の表示装置。
- 前記AlOxの屈折率は、1.58乃至1.65であることを特徴とする請求項7に記載の表示装置。
- 前記酸化膜は複数のAlOxの層からなることを特徴とする請求項1乃至7のいずれか1項に記載の表示装置。
- 前記酸化物半導体は、IGZO、ITZO、IGOまたはこれらの組み合わせであることを特徴とする請求項1乃至9のいずれか1項に記載の表示装置。
- 前記ゲート電極と前記酸化膜の間には絶縁膜が形成されていることを特徴とする請求項1乃至10のいずれか1項に記載の表示装置。
- 前記表示装置は液晶表示装置であることを特徴とする請求項1乃至11のいずれか1項に記載の表示装置。
- 前記表示装置は有機EL表示装置であることを特徴とする請求項1乃至11のいずれか1項に記載の表示装置。
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JP2016100493A JP6725317B2 (ja) | 2016-05-19 | 2016-05-19 | 表示装置 |
CN201710266582.1A CN107403806B (zh) | 2016-05-19 | 2017-04-21 | 显示装置 |
US15/585,401 US10026754B2 (en) | 2016-05-19 | 2017-05-03 | Display device |
US16/011,725 US10573666B2 (en) | 2016-05-19 | 2018-06-19 | Display device |
US16/743,080 US11049882B2 (en) | 2016-05-19 | 2020-01-15 | Display device |
US17/336,620 US11521990B2 (en) | 2016-05-19 | 2021-06-02 | Display device |
US17/983,481 US11810921B2 (en) | 2016-05-19 | 2022-11-09 | Display device |
US18/480,552 US20240030226A1 (en) | 2016-05-19 | 2023-10-04 | Display device |
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US20170338249A1 (en) | 2017-11-23 |
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