JP2022541372A - 基板処理方法及び基板処理装置 - Google Patents
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- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
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- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
- H01J37/32816—Pressure
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Abstract
Description
鉛直流型反応室と;
前記反応室の水平方向中央部に位置するフローガイド及び基板支持部と;
を備え、前記基板支持部は前記フローガイドの下に位置し、
前記フローガイドは、前記フローガイドの上方からの鉛直流が前記基板支持部へと下方に向かう途中に前記フローガイドを回り込むようにさせる。
鉛直流型反応室を提供することを含み、前記鉛直流型反応室は、その水平方向中央部にフローガイド及び基板支持部を有し、前記基板支持部は前記フローガイドの下に位置し、
前記フローガイドは、前記フローガイドの上方からの鉛直流が前記基板支持部へと下方に向かう途中に前記フローガイドを回り込むようにさせる。
・ 基板支持部120は、基板1枚ではなく、水平方向に向けられた複数の基板を支持してもよい。
・ 流路461や流路561に代えて又は加えて、不活性ガスの噴射が、蓋145・345及び/又は上部リング111及び/又は下部リング112及び/又は部品310内の空洞を用いて行われるようにされてもよい。また、流路の開口部を通じて噴射されることに代えて、ガス透過面又は多孔壁として実装されうる、不活性ガスが通過して出てくるような面が用いられてもよい。
・ 図4や図5の実施例のように不活性ガスを噴射することに代えて又は加えて、反応ガスが噴射されてもよい。
・ 下向きの凸部は、図3や図4の実施例のように円錐状凸部ではなく、如何なる形状であってもよい。実施形態によっては、例えば対称的な形状でなくともよく、回転対称ではなくともよい。
・ 蓋345がフローガイド310と流体的に接続されていることに代えて、蓋345は部品310と離間していてもよく、蓋345の内部から部品310の内部への内部的な流体接続はなくてもよい。
・ フローガイド310がディスク状伸展部を有する二重円錐形であることに代えて、部品310は異なる形状であってもよい。例えば部分332は省略されてもよい。及び/又は、上部円錐331の領域は部品310の端部までに亘っていてもよい(このためディスク状伸展部は設けられない)。
・ フローガイド110やフローガイド310が対称的な形状であること又は回転対称性を有することに代えて、部品110や310は非対応的な形状であってもよい。例えば、ある入口から反応室に入るプロセスケミカルには異なるフロージオメトリが望ましい場合や、部品110や310の形状が反応室の断面に適合される場合に、そのような非対称性が導入されてもよい。
Claims (21)
- 基板処理装置であって、
鉛直流型反応室と;
前記反応室の水平方向中央部に位置するフローガイド及び基板支持部と;
を備え、
前記基板支持部は前記フローガイドの下に位置し、
前記フローガイドは、前記フローガイドの上方からの鉛直流が前記基板支持部へと下方に向かう途中に前記フローガイドを回り込むようにさせる、
装置。 - 前記反応室内で、少なくとも1回向きを変える湾曲した流路を提供する、請求項1に記載の装置。
- 前記反応室内で複数の方向転換部を有する湾曲した流路であって、各方向転換部において広くなっている流路を提供する、請求項1又は2に記載の装置。
- 前記反応室の側部に少なくとも1つの更なるフローガイドを有する、請求項1から3のいずれかに記載の装置。
- 最上部のフローガイドよりも高い位置に複数のプロセスケミカル入口を有する、請求項1から4のいずれかに記載の装置。
- 前記フローガイドが吊り下がる反応室蓋を備える、請求項1から5のいずれかに記載の装置。
- 前記反応室蓋の中央部に下方に突出する凸部を有する、請求項6に記載の装置。
- 前記フローガイドは板状の部品であるか、円錐形状を有する、請求項1から7のいずれかに記載の装置。
- 前記反応室にガスを噴射するための開口部を有する反応室蓋を備える、請求項1から8のいずれかに記載の装置。
- 水平方向中央部に位置する逆さまに向いた円錐であって前記開口部を有する円錐を前記反応室蓋に備える、請求項9に記載の装置。
- 前記反応室蓋から前記フローガイドへの流路を備え、該流路は前記反応室蓋の内部から前記フローガイドの内部への流体接続を提供する、請求項10に記載の装置。
- 前記フローガイドは該フローガイド内部から前記反応室へガスを噴射するための開口部を有する、請求項1から11のいずれかに記載の装置。
- 前記反応室は前記フローガイドの上側に、別のフローガイドとしての役割を果たす上部リングを備える、請求項1から12のいずれかに記載の装置。
- 前記反応室は前記フローガイドの下側に、別のフローガイドとしての役割を果たす下部リングを備える、請求項1から13のいずれかに記載の装置。
- 前記フローガイドは、前記上部リングと前記フローガイドとの間、及び前記フローガイドと前記下部リングとの間を進行する湾曲した流路を強要する、請求項13又は14に記載の装置。
- 前記フローガイドは回転対称な部品である、請求項1から7のいずれかに記載の装置。
- 前記フローガイドの回転対称軸は、前記反応室の回転軸に揃えられている、請求項16に記載の装置。
- 基板処理装置の動作方法であって、
鉛直流型反応室を提供することを含み、前記鉛直流型反応室は、その水平方向中央部にフローガイド及び基板支持部を有し、前記基板支持部は前記フローガイドの下に位置し、
前記フローガイドは、前記フローガイドの上方からの鉛直流が前記基板支持部へと下方に向かう途中に前記フローガイドを回り込むようにさせる、
方法。 - 請求項18に記載の方法であって、
前記反応室内で、少なくとも1回向きを変える湾曲した流路を提供することを含む、方法。 - 請求項18又は19に記載の方法であって、
前記反応室内で複数の方向転換部を有する湾曲した流路であって、各方向転換部において広くなっている流路を提供することを含む、方法。 - 請求項18から20のいずれかに記載の方法であって、
前記フローガイド内部から前記反応室へガスを噴射することを含む、方法。
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