KR100877129B1 - 열처리용 웨이퍼 지지구 및 열처리 장치 - Google Patents
열처리용 웨이퍼 지지구 및 열처리 장치 Download PDFInfo
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- KR100877129B1 KR100877129B1 KR1020057013487A KR20057013487A KR100877129B1 KR 100877129 B1 KR100877129 B1 KR 100877129B1 KR 1020057013487 A KR1020057013487 A KR 1020057013487A KR 20057013487 A KR20057013487 A KR 20057013487A KR 100877129 B1 KR100877129 B1 KR 100877129B1
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 12
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- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 239000012298 atmosphere Substances 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/6875—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a plurality of individual support members, e.g. support posts or protrusions
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67109—Apparatus for thermal treatment mainly by convection
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
- H01L21/67303—Vertical boat type carrier whereby the substrates are horizontally supported, e.g. comprising rod-shaped elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
- H01L21/67303—Vertical boat type carrier whereby the substrates are horizontally supported, e.g. comprising rod-shaped elements
- H01L21/67309—Vertical boat type carrier whereby the substrates are horizontally supported, e.g. comprising rod-shaped elements characterized by the substrate support
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
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- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
Description
Claims (23)
- 적어도 열처리하는 웨이퍼를 지지하는 복수의 웨이퍼 지지부재와 상기 지지부재를 보지하는 지지부재 홀더를 가지는 열처리용 웨이퍼 지지구로서, 상기 복수의 웨이퍼 지지부재 중 적어도 일부의 지지부재는 상기 웨이퍼와의 접촉부가 상기 지지부재 홀더에 대해 움직일 수 있고, 상기 지지부재 홀더가 다수개의 핀 구멍을 가지는 핀 홀더로 이루어지며, 상기 핀 구멍이 슬릿상이고, 상기 슬릿상 핀 구멍은 상기 핀 홀더 중심에서 방사상으로 설치되어 있는 것을 특징으로 하는 열처리용 웨이퍼 지지구.
- 제 1항에 있어서, 상기 접촉부의 형상이 상기 열처리하는 웨이퍼에 대해 볼록한 곡면인 것을 특징으로 하는 열처리용 웨이퍼 지지구.
- 제 2항에 있어서, 상기 접촉부의 형상이 구형 또는 타원구형인 것을 특징으로 하는 열처리용 웨이퍼 지지구.
- 제 1항에 있어서, 상기 웨이퍼 지지부재가 핀으로 이루어지고, 상기 지지부재 홀더가 상기 핀을 보지하는 핀 홀더로 이루어지고 상기 핀은 상기 핀 홀더에 형성된 핀 구멍에 끼워 넣어져 배치되는 것을 특징으로 하는 열처리용 웨이퍼 지지구.
- 제 4항에 있어서, 상기 핀은 상기 핀 홀더에서 빼내는 것이 가능하게 구성되는 것을 특징으로 하는 열처리용 웨이퍼 지지구.
- 제 4항에 있어서, 상기 핀은 원기둥상의 소재를 가공한 것을 특징으로 하는 열처리용 웨이퍼 지지구.
- 제 4항에 있어서, 상기 핀 및 상기 핀 홀더의 소재는 SiC, 실리콘 또는 석영인 것을 특징으로 하는 열처리용 웨이퍼 지지구.
- 삭제
- 삭제
- 제 1항에 있어서, 상기 복수개의 슬릿상 핀 구멍 각각은 직사각형 모양을 가지며 방사방향에 대하여 직각으로 연장된 폭을 가지고, 복수 개의 슬릿상 핀 구멍 각각의 폭은 동일한 것을 특징으로 하는 열처리용 웨이퍼 지지구.
- 제 4항에 있어서, 상기 핀 홀더가 원판상 또는 원환상인 것을 특징으로 하는 열처리용 웨이퍼 지지구.
- 제 11항에 있어서, 상기 핀 홀더가 원판상이고, 그 중심위치에 원상 핀 구멍을 설치한 것을 특징으로 하는 열처리용 웨이퍼 지지구.
- 제 1항에 있어서, 상기 복수개의 웨이퍼 지지부재 각각은 다수개의 슬릿상 핀 구멍 각각에 삽입되는 경우, 웨이퍼의 신축방향 움직임에 의하여 신축방향으로 기울어지는 것을 특징으로 하는 열처리용 웨이퍼 지지구.
- 삭제
- 삭제
- 삭제
- 삭제
- 삭제
- 제 1항에 있어서, 상기 지지부재 홀더를 복수 보지하는 지주와, 상기 지주를 보지하는 베이스를 더 가지는 것을 특징으로 하는 열처리용 웨이퍼 지지구.
- 제 19항에 있어서, 상기 지지부재 홀더는 상기 지주에서 빼내는 것이 가능하게 구성되는 것을 특징으로 하는 열처리용 웨이퍼 지지구.
- 제 19항에 있어서, 상기 지주 및 베이스의 소재는 SiC, 실리콘 또는 석영인 것을 특징으로 하는 열처리용 웨이퍼 지지구.
- 제 1항에 따른 열처리용 웨이퍼 지지구를 가지는 열처리 장치.
- 삭제
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JPJP-P-2003-00085137 | 2003-03-26 | ||
JP2003085137 | 2003-03-26 |
Publications (2)
Publication Number | Publication Date |
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KR20060004652A KR20060004652A (ko) | 2006-01-12 |
KR100877129B1 true KR100877129B1 (ko) | 2009-01-07 |
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Application Number | Title | Priority Date | Filing Date |
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KR1020057013487A KR100877129B1 (ko) | 2003-03-26 | 2004-03-22 | 열처리용 웨이퍼 지지구 및 열처리 장치 |
Country Status (7)
Country | Link |
---|---|
US (1) | US7393207B2 (ko) |
EP (1) | EP1608011A4 (ko) |
JP (1) | JP4363401B2 (ko) |
KR (1) | KR100877129B1 (ko) |
CN (1) | CN100352032C (ko) |
TW (1) | TW200501306A (ko) |
WO (1) | WO2004086496A1 (ko) |
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CN1748301A (zh) | 2006-03-15 |
JPWO2004086496A1 (ja) | 2006-06-29 |
KR20060004652A (ko) | 2006-01-12 |
EP1608011A4 (en) | 2010-07-21 |
WO2004086496A1 (ja) | 2004-10-07 |
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