KR100837707B1 - 전자 디바이스 재료의 제조 방법, 플라즈마 처리 방법, 및 산질화막 형성 시스템 - Google Patents
전자 디바이스 재료의 제조 방법, 플라즈마 처리 방법, 및 산질화막 형성 시스템 Download PDFInfo
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- KR100837707B1 KR100837707B1 KR1020037009626A KR20037009626A KR100837707B1 KR 100837707 B1 KR100837707 B1 KR 100837707B1 KR 1020037009626 A KR1020037009626 A KR 1020037009626A KR 20037009626 A KR20037009626 A KR 20037009626A KR 100837707 B1 KR100837707 B1 KR 100837707B1
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Abstract
Description
Claims (49)
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- 적어도 O2 및 희가스를 함유하는 처리 가스의 존재 하에서, 복수의 슬릿을 갖는 평면 안테나 부재를 통한 마이크로파 조사에 기초한 플라즈마를 이용하여, Si를 주성분으로 하는 피처리 기판의 표면에 산화막을 형성하는 공정과;적어도 N2와 희가스를 함유하는 처리 가스의 존재 하에서, 복수의 슬릿을 갖는 평면 안테나 부재를 통한 마이크로파 조사에 기초하는 질화 플라즈마를 이용하여, 상기 산화막 표면을 질화하는 공정을 포함하는 것을 특징으로 하는 전자 디바이스 재료의 제조 방법.
- 제9항에 있어서, 상기 전자 디바이스는 반도체 장치인 것을 특징으로 하는 전자 디바이스 재료의 제조 방법.
- 제9항에 있어서, 상기 처리 가스는 H2를 더 함유하는 것을 특징으로 하는 전자 디바이스 재료의 제조 방법.
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- 제9항 또는 제10항에 있어서, 상기 산화막은 게이트 산화막(SiO2막)인 것을 특징으로 하는 전자 디바이스 재료의 제조 방법.
- 제9항에 있어서, 상기 산화막의 막 두께는 2.5 nm 이하인 것을 특징으로 하는 전자 디바이스 재료의 제조 방법.
- 제9항에 있어서, 상기 희가스는 크립톤, 아르곤 또는 헬륨 중 어느 하나인 것을 특징으로 하는 전자 디바이스 재료의 제조 방법.
- 제9항에 있어서, 상기 처리 가스는, 유량 200∼2000 sccm의 크립톤, 아르곤 또는 헬륨 중 어느 하나 및 유량 2 ~ 500 sccm 인 N2를 포함하는 가스; 또는 유량 2 ∼ 500 sccm의 N2, 유량 200 ∼ 2000 sccm 의 크립톤, 아르곤 또는 헬륨 중 어느 하나, 및 유량 1∼100 sccm의 H2를 함유하는 가스인 것을 특징으로 하는 전자 디바이스 재료의 제조 방법.
- 제9항에 있어서, 상기 산화막을 질화하는 공정은 실온 ~ 700 ℃의 온도 하에서 행해지는 것을 특징으로 하는 전자 디바이스 재료의 제조 방법.
- 제9항에 있어서, 상기 산화막을 질화하는 공정은 10 ∼ 3000 mTorr의 압력 하에서 행해지는 것을 특징으로 하는 전자 디바이스 재료의 제조 방법.
- 제9항에 있어서, 상기 질화 플라즈마는 0.5∼4W/cm2의 출력으로 형성되는 것을 특징으로 하는 전자 디바이스 재료의 제조 방법.
- 제9항에 있어서, 층 형성 가스의 존재하에서 가열하여, 상기 산화막 또는 산질화막 상에 전극층을 형성하는 공정을 포함하는 것을 특징으로 하는 전자 디바이스 재료의 제조방법.
- 제20항에 있어서, 상기 전극층은 폴리실리콘 또는 비결정질 실리콘 또는 SiGe로 이루어지는 전극층인 것을 특징으로 하는 전자 디바이스 재료의 제조 방법.
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- 제20항에 있어서, 상기 전극층은 게이트 전극인 것을 특징으로 하는 전자 디바이스 재료의 제조 방법.
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- 처리 용기 내의 기판 표면에 플라즈마를 조사하고, 기판 표면에 산질화막을 형성하기 위한 플라즈마 처리 방법으로서,상기 처리용기 내에 적어도 O2 가스와 희가스를 포함하는 처리 가스를 도입하고, 상기 처리 용기 내에 안테나를 통해, 적어도 O2 가스와 희가스를 포함하는 상기 처리가스의 플라즈마를 생성하고, 상기 기판 표면에 적어도 O2 가스와 희가스를 포함하는 상기 처리가스의 플라즈마를 조사하는 것에 의해, 상기 기판상에 산화막을 형성하는 공정과,상기 처리 용기 내에 적어도 N2 가스와 희가스를 포함하는 처리 가스를 도입하고, 상기 처리용기내에 안테나를 통해, 적어도 N2 가스와 희가스를 포함하는 상기 처리가스의 플라즈마를 생성하고, 상기 산화막 표면에 적어도 N2 가스와 희가스를 포함하는 상기 처리가스의 상기 플라즈마를 조사하는 것에 의해, 상기 산화막 표면을 질화하여, 상기 기판 표면에 산질화막을 형성하는 공정을 포함하는 것을 특징으로 하는 플라즈마 처리 방법.
- 제29항에 있어서, 상기 산화막은 실리콘막이고, 상기 산질화막은 실리콘 산질화막인 것을 특징으로 하는 플라즈마 처리 방법.
- 제29항 또는 제30항에 있어서, 상기 산화막 형성조건의 온도는 실온 ~ 700℃ 이고, 압력은 20 ~ 5000 mTorr 인 것을 특징으로 하는 플라즈마 처리 방법.
- 제31항에 있어서, 상기 산화막 형성조건은, 상기 희가스가 크립톤, 아르곤 또는 헬륨 중 어느 하나이고, 상기 희가스의 유량은 500 ~ 3000 sccm 이고, 상기 O2 가스의 유량은 5 ~ 500 sccm 인 것을 특징으로 하는 플라즈마 처리 방법.
- 제29항 또는 제30항에 있어서, 상기 산질화막 형성 조건의 온도는, 실온 ~ 700℃ 이고, 압력은 10 ~ 3000 mTorr 인 것을 특징으로 하는 플라즈마 처리 방법.
- 제33항에 있어서, 상기 산질화막 형성조건은, 상기 희가스가 크립톤, 아르곤 또는 헬륨 중 어느 하나이고, 상기 희가스의 유량은 200 ~ 2000 sccm 이고, 상기 N2 가스의 유량은 2 ~ 500 sccm 인 것을 특징으로 하는 플라즈마 처리 방법.
- 제29항에 있어서, 상기 플라즈마의 전자 온도는 2eV 이하이고, 플라즈마 밀도는 1011 ~ 1013 /cm3인 것을 특징으로 하는 플라즈마 처리 방법.
- 제29항에 있어서, 상기 안테나는 복수의 슬릿을 가지는 평면 안테나인 것을 특징으로 하는 플라즈마 처리 방법.
- 제29항에 있어서, 상기 플라즈마는 마이크로파를 상기 안테나를 통해 상기 처리용기 내에 도입하여 생성되는 것을 특징으로 하는 플라즈마 처리 방법.
- 처리용기 내의 기판상에 형성하는 산화막 표면에 플라즈마를 조사하여, 상기 산화막을 질화하여 산질화막을 형성하기 위한 플라즈마 처리 방법으로서,상기 처리용기 내에 산화막을 형성하는 상기 기판을 반입하는 공정과;상기 처리용기 내에 적어도 N2 가스와 희가스를 포함하는 처리가스를 도입하는 공정과;상기 처리용기 내에 안테나를 통해, 적어도 N2 가스와 희가스를 포함하는 상기 처리가스의 플라즈마를 생성하는 공정과;상기 산화막 표면에 적어도 N2 가스와 희가스를 포함하는 상기 처리가스의 플라즈마를 조사하는 공정과;적어도 N2 가스와 희가스를 포함하는 상기 처리가스의 상기 플라즈마에 의해 상기 산화막 표면을 질화하여, 상기 기판 표면에 산질화막을 형성하는 공정을 포함하는 것을 특징으로 하는 플라즈마 처리 방법.
- 제38항에 있어서, 상기 산화막은 실리콘 산화막이고, 상기 산질화막은 실리콘 산질화막인 것을 특징으로 하는 플라즈마 처리 방법.
- 제38항 또는 제39항에 있어서, 상기 산질화막 형성 조건의 온도는, 실온 ~ 700℃ 이고, 압력은 10 ~ 3000 mTorr 인 것을 특징으로 하는 플라즈마 처리 방법.
- 제40항에 있어서, 상기 산질화막 형성조건은 상기 희가스가 크립톤, 아르콘 또는 헬륨 중 어느 하나이고, 상기 희가스의 유량은 200 ~ 2000 sccm 이고, 상기 N2 가스의 유량은 2 ~ 500 sccm 인 것을 특징으로 하는 플라즈마 처리 방법.
- 제40항에 있어서, 상기 플라즈마의 전자 온도는, 2eV 이하이고, 플라즈마 밀도는, 1011 ~ 1013 /cm3인 것을 특징으로 하는 플라즈마 처리 방법.
- 제38항에 있어서, 상기 안테나는 복수의 슬릿을 가지는 평면 안테나인 것을 특징으로 하는 플라즈마 처리 방법.
- 제38항 또는 제43항에 있어서, 상기 플라즈마는 마이크로파를 상기 안테나를 통해 상기 처리용기 내에 도입하여 생성되는 것을 특징으로 하는 플라즈마 처리 방법.
- 기판 표면에 플라즈마를 조사하고, 기판 표면에 산질화막을 형성하는 시스템으로서,상기 기판을 반송하는 반송수단을 가지는 반송실과,상기 반송실에 배치되고, 상기 기판을 플라즈마 처리하는 적어도 하나의 플라즈마 처리 유닛과;상기 반송실에 배치되고, 상기 기판을 가열하는 가열 유닛과;상기 반송실에 배치되고, 상기 반송실 내에 상기 기판을 반입하는 로드 록 유닛과;상기 기판을 배치하는 카세트 부와;상기 카세트부로부터 상기 로드 록 유닛으로 상기 기판을 운반하는 로더부를 포함하고,상기 플라즈마 처리 유닛은,적어도 O2 가스와 희가스를 포함하는 처리가스를 도입하고, 상기 플라즈마 처리 유닛 내에 안테나를 통해, 상기 적어도 O2 가스와 희가스를 포함하는 처리가스의 플라즈마를 생성하고, 상기 기판 표면에 상기 적어도 O2 가스와 희가스를 포함하는 처리가스의 플라즈마를 조사하는 것에 의해, 상기 기판상에 산화막을 형성하는 제1 플라즈마 처리 유닛과;적어도 N2가스와 희가스를 포함하는 처리 가스를 도입하고, 상기 플라즈마 처리유닛 내에 안테나를 통해, 상기 적어도 N2 가스와 희가스를 포함하는 처리가스의 플라즈마를 생성하고, 상기 산화막 표면에 상기 적어도 N2 가스와 희가스를 포함하는 처리가스의 플라즈마를 조사하는 것에 의해, 상기 산화막 표면을 질화하여, 상기 기판 표면에 산질화막을 형성하는 제2 플라즈마 처리 유닛을 포함하는 것을 특징으로 하는 것인, 산질화막 형성 시스템.
- 기판상에 산화막이 형성되고, 상기 산화막 표면을 플라즈마를 이용하여 질화하여 산질화막을 형성하는 시스템으로서,상기 산화막을 가지는 기판을 반송하는 반송수단을 가지는 반송실과;상기 반송실에 배치되고, 상기 산화막을 가지는 기판을 플라즈마에 의해 질화처리하는 적어도 하나의 플라즈마 처리 유닛과;상기 반송실에 배치되고, 상기 산화막을 가지는 기판을 가열하는 가열 유닛과;상기 반송실에 배치되고, 상기 반송실내에 상기 기판을 반입하는 로드 록 유닛과;상기 기판을 배치하는 카세트 부와;상기 카세트 부로부터 상기 로드 록으로 상기 기판을 운반하는 로더 부를 포함하고,상기 플라즈마 처리 유닛은, 상기 플라즈마 처리 유닛내에 적어도 N2 가스와 희가스를 포함하는 처리 가스를 도입하고, 상기 플라즈마 처리 유닛 내에 안테나를 통해, 상기 적어도 N2 가스와 희가스를 포함하는 처리 가스의 플라즈마를 생성하고, 상기 산화막 표면에 상기 적어도 N2 가스와 희가스를 포함하는 처리 가스의 플라즈마를 조사하는 것에 의해, 상기 산화막 표면을 질화하여 상기 기판 표면에 산질화막을 형성하는 것을 특징으로 하는 산질화막 형성 시스템.
- 제45항 또는 제46항에 있어서, 상기 안테나는 복수의 슬릿을 가지는 평면 안테나인 것을 특징으로 하는 산질화막 형성 시스템.
- 제45항 또는 제46항에 있어서, 상기 플라즈마는 마이크로파를 상기 안테나를 통해 상기 처리용기 내에 도입하여 생성되는 것을 특징으로 하는 산질화막 형성 시스템.
- 제45항 또는 제46항에 있어서, 상기 플라즈마의 전자온도는 2eV 이하이고, 플라즈마 밀도는 1011 ~ 1013 /cm3인 것을 특징으로 하는 산질화막 형성 시스템.
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US20050233599A1 (en) | 2005-10-20 |
KR20060061404A (ko) | 2006-06-07 |
JP3916565B2 (ja) | 2007-05-16 |
CN1860596A (zh) | 2006-11-08 |
JPWO2002058130A1 (ja) | 2004-05-27 |
KR20090053965A (ko) | 2009-05-28 |
KR20070116696A (ko) | 2007-12-10 |
JP2010050462A (ja) | 2010-03-04 |
KR100746120B1 (ko) | 2007-08-13 |
JP2007013200A (ja) | 2007-01-18 |
JP4926219B2 (ja) | 2012-05-09 |
EP1361605A1 (en) | 2003-11-12 |
EP1361605A4 (en) | 2006-02-15 |
JP4401375B2 (ja) | 2010-01-20 |
WO2002058130A1 (fr) | 2002-07-25 |
US20040142577A1 (en) | 2004-07-22 |
US20070224837A1 (en) | 2007-09-27 |
KR20030070126A (ko) | 2003-08-27 |
CN101399198A (zh) | 2009-04-01 |
CN100477113C (zh) | 2009-04-08 |
KR100994387B1 (ko) | 2010-11-16 |
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