JP2013522463A - 複式噴射を伴う原子層堆積チャンバ - Google Patents
複式噴射を伴う原子層堆積チャンバ Download PDFInfo
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
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- 229910000449 hafnium oxide Inorganic materials 0.000 description 1
- PDPJQWYGJJBYLF-UHFFFAOYSA-J hafnium tetrachloride Chemical compound Cl[Hf](Cl)(Cl)Cl PDPJQWYGJJBYLF-UHFFFAOYSA-J 0.000 description 1
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 1
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- C23C16/45523—Pulsed gas flow or change of composition over time
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45587—Mechanical means for changing the gas flow
- C23C16/45591—Fixed means, e.g. wings, baffles
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- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
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Abstract
Description
Claims (15)
- 上部および下部を有し、中心軸に沿って延びるチャネルと、
内方領域を有し、2つ以上の環状チャネルを少なくとも部分的に画定するハウジングと、
前記内方領域内に設置されて前記上部を画定するインサートであって、前記上部が前記2つ以上の環状チャネルと流体結合されるインサートと、
前記チャネルの底部からチャンバリッドアセンブリの外周部分まで延びるテーパ状下部表面と
を備えるチャンバリッドアセンブリ。 - 前記ハウジングが、ベース上に設置されて前記内方領域を画定する環状マニホルドをさらに備えている、請求項1に記載のチャンバリッドアセンブリ。
- 前記2つ以上の環状チャネルは前記中心軸に沿って垂直方向に離間して設置されている、請求項2に記載のチャンバリッドアセンブリ。
- 各環状チャネルは、前記内方領域において円周状に延びて、360°にわたる流体連通をもたらし、流体供給ラインに結合しており、各流体供給ラインは1つまたは複数の流体源と結合している、請求項1に記載のチャンバリッドアセンブリ。
- 前記環状マニホルド内に設置されたパージラインをさらに備えている、請求項2に記載のチャンバリッドアセンブリ。
- 前記パージラインが、前記内方領域と流体結合された1つまたは複数の間隙パージラインと結合された水平方向ガス輸送ラインを備えている、請求項5に記載のチャンバリッドアセンブリ。
- 少なくとも1つの間隙パージラインが、前記2つ以上の環状チャネルの上方において前記内方領域と結合し、少なくとも1つの間隙パージラインが、前記2つ以上の環状チャネルの下方にて前記内方領域と結合している、請求項6に記載のチャンバリッドアセンブリ。
- 各間隙パージラインが、前記内方領域にわたって円周状に形成された環状チャネルをさらに備えている、請求項6に記載のチャンバリッドアセンブリ。
- 前記パージラインが、前記環状マニホルド内に垂直方向に設置されたラインをさらに備えている、請求項6に記載のチャンバリッドアセンブリ。
- 前記インサートが、前記ハウジングの頂部に結合される切頭部分と、前記環状マニホルドの内部に設置されて前記環状マニホルドの内部と同一平面になる垂直本体とを備えている、請求項2に記載のチャンバリッドアセンブリ。
- 前記インサートが、各環状チャネルと結合されて各環状チャネルと前記上部との間に複数の開孔入口を形成する、前記垂直本体を貫通して水平面に沿って設置された複数の開孔の1つまたは複数のセットをさらに備えている、請求項10に記載のチャンバリッドアセンブリ。
- 前記チャネルの前記上部が、円筒形状を有する前記垂直本体によって画定されている、請求項10に記載のチャンバリッドアセンブリ。
- 前記垂直本体が円筒状上部および拡張底部を備えており、前記拡張底部が複数の開孔の下部セットの下方に設置されている、請求項12に記載のチャンバリッドアセンブリ。
- 前記開孔の各々が前記2つ以上の環状チャネルの中の少なくとも1つと流体結合されている、請求項1に記載のチャンバリッドアセンブリ。
- 基板を処理する方法であって、
1つまたは複数の流体源からチャンバリッドアセンブリの流体供給ラインを経由して2つ以上のプロセスガスを流すステップと、
前記流体供給ラインから、前記チャンバリッドアセンブリのハウジングにより少なくとも部分的に画定された2つ以上の環状チャネルを経由して前記2つ以上のプロセスガスを流すステップと、
前記2つ以上の環状チャネルから、前記内方領域内に設置されたインサートを介して、前記チャンバリッドアセンブリ内のチャネルの上部内へと前記2つ以上のプロセスガスを流すステップであって、前記インサートが前記チャネルの前記上部を画定しているステップと、
前記チャネルを介して、基板支持体の上に配置された基板の上方の反応ゾーン内に前記1つまたは複数のプロセスガスを流すステップと
を含む方法。
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CN102762767A (zh) | 2012-10-31 |
TWI576460B (zh) | 2017-04-01 |
CN102762767B (zh) | 2015-11-25 |
US9175394B2 (en) | 2015-11-03 |
WO2011112617A3 (en) | 2011-11-24 |
TW201202467A (en) | 2012-01-16 |
EP2545197A4 (en) | 2014-01-01 |
KR20130030745A (ko) | 2013-03-27 |
US20110223334A1 (en) | 2011-09-15 |
EP2545197B1 (en) | 2020-12-16 |
SG183536A1 (en) | 2012-09-27 |
WO2011112617A2 (en) | 2011-09-15 |
EP2545197A2 (en) | 2013-01-16 |
SG10201501824XA (en) | 2015-05-28 |
JP5889806B2 (ja) | 2016-03-22 |
KR101810532B1 (ko) | 2017-12-19 |
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