CN108220921A - 成膜装置以及成膜方法 - Google Patents

成膜装置以及成膜方法 Download PDF

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CN108220921A
CN108220921A CN201711404461.5A CN201711404461A CN108220921A CN 108220921 A CN108220921 A CN 108220921A CN 201711404461 A CN201711404461 A CN 201711404461A CN 108220921 A CN108220921 A CN 108220921A
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gas
film
processing
air
flow
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竹泽由裕
坂下训康
中岛滋
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Tokyo Electron Ltd
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Abstract

成膜装置以及成膜方法。在对沿垂直方向多层地配置的状态的多个基板进行成膜处理时，使膜厚的面内均匀性和覆盖性能良好。成膜装置具有：基板保持构件，其以规定间隔沿垂直方向多层地保持多个被处理基板；处理容器，其收容保持有被处理基板的基板保持构件；处理气体导入构件，其具有对处理容器内的被处理基板平行地喷出处理气体的多个气体喷出孔，来向处理容器内导入处理气体；排气机构，其对处理容器内进行排气；以及多个气流调整构件，该多个气流调整构件分别与被处理基板相向地设置，其中，气流调整构件将从喷出孔对被处理基板平行地喷出的处理气体的气流调整为从位于该气流的下方的被处理基板的上方朝向该被处理基板的表面的气流。

Description

成膜装置以及成膜方法
技术领域
本发明涉及对沿垂直方向多层地配置的状态的多个被处理基板进行成膜处理的成膜装置以及成膜方法。
背景技术
例如在半导体器件的制造中对半导体晶圆等基板进行扩散处理、成膜处理、氧化处理等热处理的情况下，广泛应用了如下一种批量式的纵型热处理装置：向纵型的石英制的处理容器内搬入沿垂直方向多层地配置有多个基板的石英制的晶舟，利用沿基板的配置方向延伸且具有被设置在与各晶圆对应的位置的多个气体喷出孔的气体喷射器向基板供给气体，并且利用设置在处理容器的周围的加热器对基板进行加热。
最近，随着半导体器件的微细化、构造的复杂化，在将这种纵型热处理装置用于基于化学气相沉积法(CVD法)、原子层沉积法(ALD法)的成膜处理的情况下，要求膜厚的面内均匀性。
针对这种要求，在专利文献1中记载了如下一种技术：与沿垂直方向多层地配置的多个基板的处理面分别相向地配置圆环状(环状)构件。
专利文献1：日本特开2010-132958号公报
发明内容
发明要解决的问题
然而，最近半导体器件的微细化和构造的复杂化日益加剧，进一步要求膜厚的面内均匀性，特别是对于HfO2膜等High-k膜而言进一步期望面内均匀性和覆盖性能，上述专利文献1的技术越来越不充分。
因而，本发明的目的在于提供如下的成膜装置以及成膜方法：在对沿垂直方向多层地配置的状态的多个基板进行成膜处理时，能够使膜厚的面内均匀性和覆盖性能良好。
用于解决问题的方案
为了解决上述问题，本发明的第一观点提供一种成膜装置，在被处理基板的表面形成规定的膜，该成膜装置的特征在于，具有：基板保持构件，其将多个被处理基板以规定间隔沿垂直方向多层地保持；处理容器，其收容保持有多个被处理基板的所述基板保持构件；处理气体导入构件，其具有对所述处理容器内的所述被处理基板平行地喷出成膜用的处理气体的多个气体喷出孔，来向所述处理容器内导入处理气体；排气机构，其对所述处理容器内进行排气；以及多个气流调整构件，所述多个气流调整构件与所述多个被处理基板分别相向地设置，其中，所述气流调整构件将从所述处理气体导入构件的所述气体喷出孔对被处理基板平行地喷出的所述处理气体的气流调整为从位于该气流的下方的被处理基板的上方朝向该被处理基板的表面的气流。
在第一观点中，优选的是，所述气流调整构件具有多个贯通孔，经由所述多个贯通孔向下方的被处理基板供给从上方朝向该被处理基板的表面的气流。在该情况下，优选的是，所述处理气体导入构件具有沿晶圆的排列方向垂直地延伸的垂直部，所述多个气体喷出孔被配置在所述垂直部的、位于所述多个气流调整构件各自的正上方的位置，从所述气体喷出孔水平地喷出的所述处理气体经由所述气流调整构件的所述贯通孔成为从上方朝向被处理基板的表面的气流被供给到位于该贯通孔的下方的被处理基板。
所述气流调整构件也可以具有环状构件、用于将所述环状构件的上表面堵塞的板状构件以及形成于所述环状构件的狭缝，从所述狭缝向位于该狭缝下方的被处理基板的表面供给所述气流。
作为成膜装置，也可以还具有加热单元，该加热单元被设置在所述处理容器的周围，将所述处理容器的内部加热为规定温度。
所述处理气体也可以包含原料气体以及与原料气体反应的反应气体，其中，所述原料气体含有要形成的膜的构成元素，所述处理气体导入构件具有用于导入所述原料气体的第一气体导入构件和用于导入所述反应气体的第二气体导入构件。
本发明的第二观点提供一种成膜方法，使用成膜装置在被处理基板的表面形成规定的膜，该成膜装置具有：基板保持构件，其将多个被处理基板以规定间隔沿垂直方向多层地保持；处理容器，其收容保持有多个被处理基板的所述基板保持构件；处理气体导入构件，其具有对所述处理容器内的所述被处理基板平行地喷出成膜用的处理气体的多个气体喷出孔，来向所述处理容器内导入处理气体；以及排气机构，其对所述处理容器内进行排气，该成膜方法的特征在于，将从所述处理气体导入构件的所述气体喷出孔对被处理基板平行地喷出的所述处理气体的气流调整为从位于该气流的下方的被处理基板的上方朝向该被处理基板的表面的气流来进行成膜处理。
在上述第二观点中，所述处理气体也可以包含原料气体以及与原料气体反应的反应气体，其中，所述原料气体含有想要形成的膜的构成元素，通过原料气体与反应气体的反应来在所述被处理基板的表面形成规定的膜。
在上述第一观点和第二观点中，关于所述成膜，也可以利用有序地供给所述原料气体和所述反应气体的原子层沉积法来进行成膜。所述规定的膜可以是High-k膜，作为High-k膜，能够列举HfO2膜。
发明的效果
根据本发明，能够将从处理气体导入构件的气体喷出孔对被处理基板平行地喷出的处理气体的气流调整为从位于该气流的下方的被处理基板的上方朝向该被处理基板的表面的气流，因此能够使在被处理基板上形成的膜的膜厚的面内均匀性良好。另外，像这样形成从被处理基板的上方朝向该被处理基板的表面的气流，因此能够对如沟槽那样的凹部内也充分地供给处理气体，从而能够使覆盖性能良好。
附图说明
图1是表示构成为应用本发明的纵型热处理装置的成膜装置的概要结构的截面图。
图2是表示由图1的成膜装置利用原子层沉积法进行成膜时的气体供给顺序的图。
图3是用于说明晶舟的构造的立体图。
图4是表示向晶舟的支柱中形成的槽插入了晶圆的状态的图。
图5是表示以往的成膜装置的向晶圆供给的气流的示意图。
图6是表示以往的成膜装置中的利用气流进行成膜的情况下的膜厚面内分布的一例的示意图。
图7是表示以往的成膜装置中的利用气流实际形成HfO2膜时的膜厚测定结果的图。
图8是表示在气流实验的实验1和实验2中使用的环构件和晶圆的配置的图。
图9是表示在气流实验的实验3中使用的环状构件、圆板构件以及晶圆的配置的图。
图10是表示在图9的圆板构件中形成狭缝状的开口并进行了成膜时的膜厚分布的图。
图11是表示形成有在气流实验的实验4中使用的狭缝的环状构件、圆板构件以及晶圆的配置的图。
图12是表示实验1～4中的晶圆的膜厚面内均匀性的图。
图13是表示实验1～4中的晶圆的膜厚分布的图。
图14是本发明的一个实施方式所涉及的成膜装置的包括具有气流调整构件的主要部分的截面图。
图15是表示本发明的一个实施方式所涉及的成膜装置的气流调整构件的俯视图。
图16是表示气流调整构件的其它例的图。
附图标记说明
1：处理容器；5：晶舟；14：原料气体供给机构；15：反应气体供给机构；16：吹扫气体供给机构；17：原料气体供给源；19、22：气体喷射器；19a、22a：气体喷出口；20：反应气体供给源；23：吹扫气体供给源；41：排气装置；42：加热装置；51：顶板；52：底板；53：支柱；54：槽；60：环状构件；61、67：支承构件；62：圆板构件；63：狭缝；65：气流调整构件(喷淋板)；66：贯通孔；100：成膜装置；W：半导体晶圆。
具体实施方式
下面，参照所附附图对本发明的实施方式进行说明。
<装置的概要>
首先，对构成为应用本发明的纵型热处理装置的成膜装置的概要结构进行说明。图1是表示应用本发明的纵型热处理装置的概要结构的截面图。
本例的成膜装置100具有下端开口的有顶的圆筒体状的处理容器1。该处理容器1的整体例如由石英形成，在该处理容器1内的顶部设置石英制的顶板2来进行密封。如后述那样，处理容器1利用加热装置进行加热，来构成为热壁式的成膜装置。另外，在该处理容器1的下端开口部隔着O型环等密封构件4连结有例如利用不锈钢形成为圆筒体状的歧管3。
上述歧管3对处理容器1的下端进行支承，能够从该歧管3的下方对处理容器1内插入石英制的晶舟5来作为被处理体，在该石英制的晶舟5上多层地载置有多片例如25片～75片左右的半导体晶圆(以下简称为晶圆)W。后面详细地说明该晶舟5的构造。
该晶舟5隔着石英制的保温筒7被载置在台8上，该台8被支承在旋转轴10上，该旋转轴10贯穿用于将歧管3的下端开口部打开和关闭的、例如不锈钢制的盖部9。
而且，在该旋转轴10的贯穿部例如设置有磁性流体密封件11，该磁性流体密封件11以将旋转轴10气密地密封且能够旋转的方式进行支承。另外，在盖部9的周边部与歧管3的下端部之间例如插入设置有由O型环构成的密封构件12，由此保持处理容器1内的密封性。
旋转轴10安装于例如被晶舟升降机等升降机构(未图示)支承的臂13的前端，使晶舟5和盖部9等一体地升降并插入处理容器1内。此外，也可以是以向上述盖部9侧固定的方式设置上述台8，使得晶舟5不旋转地进行晶圆W的处理。
成膜装置100具有多个气体供给机构，该多个气体供给机构分别供给多种气体来作为想要利用原子层沉积法或化学气相沉积法形成的膜所需要的处理气体。例如，具有：原料气体供给机构14，其向处理容器1内供给含有想要形成的膜的构成元素的原料气体(前体)来作为处理气体；反应气体供给机构15，其向处理容器1内供给与原料气体反应的反应气体来作为处理气体；以及吹扫气体供给机构16，其向处理容器1内供给吹扫气体。
原料气体供给机构14具有原料气体供给源17、从原料气体供给源17引导原料气体的原料气体配管18、原料气体配管18中设置的开闭阀18a以及如质量流量控制器那样的流量控制器18b。
反应气体供给机构15具有反应气体供给源20、从反应气体供给源20引导反应气体的反应气体配管21、反应气体配管21中设置的开闭阀21a以及如质量流量控制器那样的流量控制器21b。
吹扫气体供给机构16具有吹扫气体供给源23、从吹扫气体供给源23引导吹扫气体的吹扫气体供给配管24、吹扫气体供给配管24中设置的开闭阀24a及如质量流量控制器那样的流量控制器24b。
在原料气体配管18上连接有气体喷射器19来作为向处理容器1内导入原料气体的气体导入构件。气体喷射器19由石英构成，具有沿歧管3的侧壁向内侧贯通的水平部和从水平部弯曲90°后延伸至处理容器1内的晶舟5的上端的垂直部，在垂直部具有多个气体喷出孔19a，该多个气体喷出孔19a用于水平地喷出原料气体来向各晶圆W喷出原料气体。
在反应气体配管21上也连接有气体喷射器22来作为向处理容器1内导入反应气体的气体导入构件。与气体喷射器19同样地，气体喷射器22也由石英构成，具有沿歧管3的侧壁向内侧贯通的水平部和延伸至晶舟5的上端的垂直部，在垂直部具有多个气体喷出孔22a，该多个气体喷出孔22a用于水平地喷出反应气体来向各晶圆W喷出反应气体。
在吹扫气体配管24上连接有向处理容器内导入吹扫气体的吹扫气体喷嘴25。
作为要形成的膜，没有特别地限制，但例示ZrO2、HfO2、TiO2、Al2O3、SiO2等氧化膜、HfN、TiN、AlN、SiN等氮化膜、ZrAlO、HfAlO、HfSiON等由上述化合物组合而成的复合膜。与要形成的膜相应地适当设定原料气体(前体)和反应气体(氧化气体、氮化气体)。
关于膜厚的面内均匀性，特别是HfO2膜等High-k膜易于出现问题，因此优选High-k膜。例如在形成HfO2膜的情况下，作为原料气体，使用如四二甲基胺基铪(Hf(NCH3)2)4：TDMAH)那样的有机铪化合物、氯化铪(HfCl4)等，作为反应气体，使用O3气体、H2O气体、O2气体、NO2气体、NO气体、N2O气体等氧化剂。
在要形成的膜需要多种原料气体、反应气体的情况下，使原料气体供给机构、反应气体供给机构、气体喷射器的数量适当增加即可。另外，也可以针对一种气体设置两个以上的气体喷射器。
作为吹扫气体，能够使用例如N2气体、Ar气体等惰性气体。
在处理容器1的一方侧面沿高度方向形成有突出部1a，在突出部1a的内部空间配置有反应气体用的气体喷射器22。另一方面，原料气体用的气体喷射器19被设置在与突出部1a相邻的位置。
此外，也可以在突出部1a设置等离子体生成机构，来将反应气体等离子化。
在处理容器1的与突出部1a相反一侧的部分，沿处理容器1的侧壁的上下方向细长地形成有用于对处理容器1内进行真空排气的排气口37。在处理容器1的与排气口37对应的部分安装有以覆盖排气口37的方式将截面形成为U字形的排气口盖构件38。在该排气口盖构件38的下部连接有用于经由排气口37对处理容器1内进行排气的排气管39。排气管39上连接有控制处理容器1内的压力的压力控制阀40和包括真空泵等的排气装置41，利用排气装置41经由排气管39对处理容器1内进行排气，并且将处理容器1内控制为规定的压力。
在处理容器1的外侧，以包围处理容器1的方式设置有用于对处理容器1及其内部的晶圆W进行加热的筒体状的加热装置42。在加热装置42中内置有电阻加热器。
成膜装置100具有控制部50。控制部50对成膜装置100的各构成部、例如阀类、作为流量控制器的质量流量控制器、升降机构等驱动机构、加热器电源等进行控制。控制部50具有主控制部、输入装置、输出装置、显示装置以及存储装置，其中，该主控制部具有CPU(计算机)来进行上述控制。在存储装置中设置有存储介质，该存储介质保存有用于控制由成膜装置100执行的处理的程序、即处理制程，主控制部调用存储介质中存储的规定的处理制程，基于该处理制程控制为利用成膜装置100进行规定的处理。
在这种成膜装置100中，利用处理容器1的配置位置的下方存在的移载机构(未图示)将作为被处理基板的未处理的晶圆W移动并载置于晶舟5，利用升降机构使晶舟5上升，利用密封构件12将歧管3与盖部9紧密贴合来将处理容器1内设为密闭空间。
然后，在将处理容器1内例如调整为0.1Torr～100Torr(13.3Pa～13330Pa)的规定的压力之后，打开开闭阀24a使吹扫气体以规定流量流动来对处理容器1内进行吹扫，在该状态下，由加热装置42预先对处理容器1内进行加热，以使晶舟5的中央部(上下方向的中央部)的温度成为例如300℃～700℃的范围的规定温度。
在该状态下一边使晶舟5进行旋转一边同时供给原料气体和反应气体，从而利用化学气相沉积法或利用原子层沉积法形成规定的膜，该原子层沉积法是如下的方法：如图2所示那样隔开吹扫而交替地供给原料气体和反应气体，来有序地进行原料气体的吸附以及所吸附的原料气体与反应气体的反应。一边对处理容器1内进行排气一边向处理容器1内供给吹扫气体，由此进行原料气体的吹扫和反应气体的吹扫。与化学气相沉积法相比，利用原子层沉积法能够均匀地形成覆盖良好的膜。
<以往的朝向晶圆的气流>
如图3所示，晶舟5具有顶板51、底板52、将顶板51与底板52相连接的多个例如三个支柱53。而且，如图4所示，在支柱53中形成有多个槽54。以往，通过将晶圆W嵌入槽54来使晶舟5支承晶圆W。然后，从不存在支柱53的、图3的箭头方向来相对于晶舟5进行晶圆W的搬入和搬出。
在利用以往的方法对晶舟5上保持的晶圆W供给气体时，如图5所示那样从形成于气体喷射器19、22的气体喷出孔19a、22a以与晶圆W的处理面水平的侧流的形式供给气流。
但是，在这种侧流的情况下会产生在晶圆面内无法获得充分的膜厚均匀性的问题。特别是在HfO2膜等High-k膜的情况下，如图6所示，在晶圆的边缘部和中央部膜厚变厚，在边缘部与中央部之间膜厚薄的面内方向出现膜厚的峰谷。在图7中示出由实际的HfO2膜的CTR散射导致的膜厚测定结果。这样，在以往的气体供给方法中无法获得所要求的膜的面内均匀性。
<气流实验>
为了消除以往的由气流导致的膜厚的面内不均匀性而进行了各种实验。
(实验1)
首先对如专利文献1中记载那样的与晶圆W相向的环状构件进行了研究。图8是表示此时的环状构件和晶圆的配置的图。在该例中，向形成于晶舟的支柱53的槽54嵌入环状构件60(开口直径为299mm)，将多个环状构件60沿垂直方向多层地配置，利用设置在环状构件60的上方的支承构件61支承晶圆W，并将环状构件60与晶圆W交替地配置。环状构件60的下表面与晶圆上表面的间距设为3.2mm。使用这种环状构件60进行HfO2膜的成膜的结果是，虽然基于环状构件60的效应使晶圆边缘部的膜厚变薄，但晶圆中央的膜厚仍然厚。因此，膜厚面内均匀性依然不充分。
(实验2)
接着，使用将开口直径从299mm变为200mm的环状构件60来同样地形成HfO2膜。通过将环状构件60的开口直径变为200mm，晶圆中央的膜厚厚的区域减少，虽然膜厚面内均匀性多少得到改善但仍不充分。
(实验3)
接着，如图9所示那样利用伪晶圆等圆板构件62堵塞环状构件60的开口部的结果是，晶圆周缘部以外的膜厚变薄，膜厚的面内均匀性反而劣化。
(实验4)
接着，当如图10所示那样获知，在图9的圆板构件62中形成狭缝状的开口来进行成膜时，与开口对应的部分的膜厚变厚。基于此，认为从晶圆W的上方朝向晶圆W的气流是重要的，如图11所示，在图9的环状构件60与圆板构件62之间形成狭缝63来形成从晶圆上方朝向晶圆W表面的适度的气流。将环状构件60的下表面与晶圆上表面的间距a设为2mm～4mm，将圆板构件62的下表面与晶圆上表面的间距大致设为2a、即4mm～8mm。利用这种气流进行HfO2膜的成膜的结果是，膜厚的面内均匀性被显著地改善。
在图12和图13中分别示出以上的实验1～实验4的膜厚面内均匀性的结果和膜厚分布的结果。根据这些结果，在没有恰当地调整气流的实验1～3中，膜厚面内均匀性完全不充分，特别是在用圆板构件62进一步覆盖环状构件60的实验3中，膜厚的面内均匀性显著地劣化，但在形成了从晶圆W的上方朝向晶圆W表面的适度的气流的实验4中，膜厚面内均匀性被大幅地改善。
<气流调整构件>
因此，在本实施方式中，将能够有效地形成从被保持于晶舟5的晶圆W的上方朝向晶圆W表面的处理气体的气流的气流调整构件与晶圆W交替地设置。由此，能够使膜厚面内均匀性良好。另外，像这样形成从晶圆W的上方朝向其表面的气流，因此即使向如沟槽那样的凹部内也充分地供给处理气体，也能够使覆盖性能良好。
图14是本发明的一个实施方式所涉及的成膜装置的包括具有气流调整构件的主要部分在内的截面图。在本实施方式中，晶舟5具有图3所示的构造。在晶舟5的支柱3中形成的多个槽54中分别嵌入了环状构件60，多个环状构件60沿垂直方向多层地配置。在该多个环状构件60上载置有气流调整构件65。气流调整构件65如图15所示那样呈圆板状且大致均匀地形成有多个贯通孔66，从而构成为喷淋板。
在气流调整构件65的上表面安装有被设置为向上方突出的多个支承构件67，晶圆W被支承在支承构件67上。因而，气流调整构件65与晶圆W相向地交替配置。
对晶舟5进行位置调整，使得分别形成于气体喷射器19、22的气体喷出孔19a、22a位于气流调整构件65的正上方的位置，经由气体喷出孔19a、22a以侧流形式被水平地喷出的气流通过气流调整构件65的贯通孔66流向下方。从贯通孔66通过的气流成为朝向被配置在该气流的下方的晶圆W的表面的气流被供给。此时，从上方朝向晶圆W的表面的气流优选为大致垂直。
即，在晶圆W的表面，从均匀地配置于气流调整构件65的多个贯通孔66通过的气流从上方被均匀地供给到晶圆整面。
这样，被证实为对膜厚面内均匀性重要的、从晶圆上方朝向晶圆表面的气流被均匀地供给到晶圆整面，由此能够使膜厚面内均匀性更加良好。另外，像这样来自多个贯通孔66的气流能够以近似垂直的状态朝向其下方的晶圆W的表面进行供给，因此能够对如沟槽那样的凹部内更加可靠地供给处理气体，来使覆盖性能更加良好，其中，该多个贯通孔66大致均匀地形成于构成为喷淋板的气流调整构件65。
此时，通过对晶圆W的上表面与向该晶圆供给气流的上方的气流调整构件65之间的距离b以及晶圆W与位于该晶圆的下方的气流调整构件65之间的距离c进行调整，能够调整膜厚面内均匀性。
以上的例子是在环状构件60上载置有气流调整构件65的例子，但也可以如图16所示那样，不使用环状构件60而将气流调整构件65直接嵌入晶舟5的支柱53的槽54。
<其它应用>
以上，对本发明的实施方式进行了说明，但本发明并不限定于上述实施方式，能够在不脱离其思想的范围内进行各种变形。
例如，在上述实施方式中，示出了作为气流调整构件而设置有喷淋板的例子，但并不限于此，只要能够供给从被处理基板的上方朝向被处理基板表面的气流即可，例如也可以如上述实验4那样在环状构件中形成狭缝，从狭缝向位于下方的被处理基板供给气流。
另外，在上述实施方式中，作为被处理基板例示了半导体晶圆，但并不限于此，即使是玻璃基板、陶瓷基板等其它基板也能够应用本发明，这是不言而喻的。

Claims (14)

1.一种成膜装置，在被处理基板的表面形成规定的膜，该成膜装置的特征在于，具有：
基板保持构件，其将多个被处理基板以规定间隔沿垂直方向多层地保持；
处理容器，其收容保持有多个被处理基板的所述基板保持构件；
处理气体导入构件，其具有对所述处理容器内的所述被处理基板平行地喷出成膜用的处理气体的多个气体喷出孔，来向所述处理容器内导入处理气体；
排气机构，其对所述处理容器内进行排气；以及
多个气流调整构件，所述多个气流调整构件与所述多个被处理基板分别相向地设置，
其中，所述气流调整构件将从所述处理气体导入构件的所述气体喷出孔对被处理基板平行地喷出的所述处理气体的气流调整为从位于该气流的下方的被处理基板的上方朝向该被处理基板的表面的气流。
2.根据权利要求1所述的成膜装置，其特征在于，
所述气流调整构件具有多个贯通孔，经由所述多个贯通孔向下方的被处理基板供给从上方朝向该被处理基板的表面的气流。
3.根据权利要求2所述的成膜装置，其特征在于，
所述处理气体导入构件具有沿晶圆的排列方向垂直地延伸的垂直部，所述多个气体喷出孔被配置在所述垂直部的、位于所述多个气流调整构件各自的正上方的位置，从所述气体喷出孔水平地喷出的所述处理气体经由所述气流调整构件的所述贯通孔成为从上方朝向被处理基板的表面的气流被供给到位于该贯通孔的下方的被处理基板。
4.根据权利要求1所述的成膜装置，其特征在于，
所述气流调整构件具有环状构件、用于将所述环状构件的上表面堵塞的板状构件以及形成于所述环状构件的狭缝，从所述狭缝向位于该狭缝的下方的被处理基板的表面供给所述气流。
5.根据权利要求1至4中的任一项所述的成膜装置，其特征在于，
还具有加热单元，该加热单元被设置在所述处理容器的周围，将所述处理容器的内部加热为规定温度。
6.根据权利要求1至5中的任一项所述的成膜装置，其特征在于，
所述处理气体包含原料气体以及与原料气体反应的反应气体，其中，所述原料气体含有要形成的膜的构成元素，
所述处理气体导入构件具有用于导入所述原料气体的第一气体导入构件和用于导入所述反应气体的第二气体导入构件。
7.根据权利要求6所述的成膜装置，其特征在于，
利用有序地供给所述原料气体和所述反应气体的原子层沉积法来进行成膜。
8.根据权利要求7所述的成膜装置，其特征在于，
所述规定的膜是High-k膜。
9.根据权利要求8所述的成膜装置，其特征在于，
所述规定的膜是HfO2膜。
10.一种成膜方法，使用成膜装置在被处理基板的表面形成规定的膜，该成膜装置具有：基板保持构件，其将多个被处理基板以规定间隔沿垂直方向多层地保持；处理容器，其收容保持有多个被处理基板的所述基板保持构件；处理气体导入构件，其具有对所述处理容器内的所述被处理基板平行地喷出成膜用的处理气体的多个气体喷出孔，来向所述处理容器内导入处理气体；以及排气机构，其对所述处理容器内进行排气，该成膜方法的特征在于，
将从所述处理气体导入构件的所述气体喷出孔对被处理基板平行地喷出的所述处理气体的气流调整为从位于该气流的下方的被处理基板的上方朝向该被处理基板的表面的气流来进行成膜处理。
11.根据权利要求10所述的成膜方法，其特征在于，
所述处理气体包含原料气体以及与原料气体反应的反应气体，其中，所述原料气体含有想要形成的膜的构成元素，通过原料气体与反应气体的反应来在所述被处理基板的表面形成规定的膜。
12.根据权利要求11所述的成膜方法，其特征在于，
利用有序地供给所述原料气体和所述反应气体的原子层沉积法来进行成膜。
13.根据权利要求12所述的成膜方法，其特征在于，
所述规定的膜是High-k膜。
14.根据权利要求13所述的成膜方法，其特征在于，
所述规定的膜是HfO2膜。
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