US20200109484A1 - Susceptor and susceptor coating method - Google Patents
Susceptor and susceptor coating method Download PDFInfo
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- US20200109484A1 US20200109484A1 US16/150,380 US201816150380A US2020109484A1 US 20200109484 A1 US20200109484 A1 US 20200109484A1 US 201816150380 A US201816150380 A US 201816150380A US 2020109484 A1 US2020109484 A1 US 2020109484A1
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- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D11/00—Electrolytic coating by surface reaction, i.e. forming conversion layers
- C25D11/02—Anodisation
- C25D11/04—Anodisation of aluminium or alloys based thereon
- C25D11/16—Pretreatment, e.g. desmutting
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B3/00—Ohmic-resistance heating
- H05B3/20—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater
- H05B3/22—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater non-flexible
- H05B3/28—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater non-flexible heating conductor embedded in insulating material
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D1/00—Processes for applying liquids or other fluent materials
- B05D1/62—Plasma-deposition of organic layers
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D5/00—Processes for applying liquids or other fluent materials to surfaces to obtain special surface effects, finishes or structures
- B05D5/08—Processes for applying liquids or other fluent materials to surfaces to obtain special surface effects, finishes or structures to obtain an anti-friction or anti-adhesive surface
- B05D5/083—Processes for applying liquids or other fluent materials to surfaces to obtain special surface effects, finishes or structures to obtain an anti-friction or anti-adhesive surface involving the use of fluoropolymers
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
- C23C16/4404—Coatings or surface treatment on the inside of the reaction chamber or on parts thereof
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
- C23C16/4405—Cleaning of reactor or parts inside the reactor by using reactive gases
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4581—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber characterised by material of construction or surface finish of the means for supporting the substrate
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D11/00—Electrolytic coating by surface reaction, i.e. forming conversion layers
- C25D11/02—Anodisation
- C25D11/04—Anodisation of aluminium or alloys based thereon
- C25D11/18—After-treatment, e.g. pore-sealing
- C25D11/24—Chemical after-treatment
- C25D11/246—Chemical after-treatment for sealing layers
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
- C25D17/16—Apparatus for electrolytic coating of small objects in bulk
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D21/00—Processes for servicing or operating cells for electrolytic coating
- C25D21/12—Process control or regulation
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B6/00—Heating by electric, magnetic or electromagnetic fields
- H05B6/02—Induction heating
- H05B6/10—Induction heating apparatus, other than furnaces, for specific applications
- H05B6/105—Induction heating apparatus, other than furnaces, for specific applications using a susceptor
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D2202/00—Metallic substrate
- B05D2202/20—Metallic substrate based on light metals
- B05D2202/25—Metallic substrate based on light metals based on Al
Definitions
- a susceptor for supporting a substrate includes a base metal and an anodized layer covering the base metal.
- the base metal may be formed of aluminum or a material containing aluminum.
- the anodized layer is a layer formed by anodizing the base metal. There is a case where the base metal is exposed due to cracks occurring in the anodized layer.
- gas containing aluminum When the exposed base metal is exposed to cleaning gas, gas containing aluminum may be generated. At this time, the gas containing aluminum may cause generation of foreign matters containing aluminum on a substrate as a processing target to be subjected to a plasma treatment.
- the base metal is exposed to cleaning gas containing F to generate AlF, and the thus-generated AlF gasifies.
- the gasifying AlF serves as a particle source during the plasma treatment of the substrate.
- Al and SiOC chemically react with each other, whereby a film of AlOC may be formed on the substrate. Also, AlOC may remain as a contamination source in a chamber.
- Some examples described herein may address the above-described problems. Some examples described herein may provide a susceptor and a susceptor coating method that can enhance the quality of substrate processing.
- a susceptor includes a base metal formed of aluminum or a material containing aluminum, an anodized layer covering a surface of the base metal and having cracks therein, and a CF coating of polymer provided in the cracks.
- FIG. 1 is a diagram showing an example of a substrate processing apparatus
- FIG. 2 is a cross-sectional view showing an example of the susceptor
- FIG. 3 is a cross-sectional view showing another example of the susceptor
- FIG. 4 is a cross-sectional view showing another example of the susceptor
- FIG. 5 is a cross-sectional view showing another example of the susceptor
- FIG. 6 is a flowchart showing an example of a susceptor coating method
- FIG. 7 is a cross-sectional view showing an example of the new susceptor
- FIG. 8 shows an example of the formed initial layer
- FIG. 9 shows an example of the formed CF coating
- FIG. 10 is a table showing an example of a processing condition.
- a susceptor and a susceptor coating method will be described with reference to the drawings.
- the same or corresponding constituent elements are represented by the same reference signs, and duplicative description thereof may be omitted.
- FIG. 1 is a diagram showing a configuration example of a substrate processing apparatus.
- This substrate processing apparatus can be provided, for example, as a PECVD apparatus.
- the substrate processing apparatus may or may not contain a gas supply system.
- a susceptor 12 is provided in a chamber 10 .
- the susceptor 12 includes a substrate supporting portion 12 A, and a support pole 12 B for supporting the substrate supporting portion 12 A.
- a substrate as a processing target can be placed on the susceptor 12 .
- the substrate is, for example, a Si wafer.
- a heater 13 for heating the susceptor may be provided inside the susceptor 12 .
- a parallel plate electrode is provided by the susceptor 12 and a showerhead 30 provided thereon.
- capacitive coupling plasma may be generated mainly between the susceptor 12 and the showerhead 30 .
- the susceptor 12 is grounded, and high frequency power is applied to the showerhead 30 .
- the showerhead 30 includes a gas passing portion 30 A provided so as to face the susceptor 12 , and an encircling portion 30 B for encircling the gas passing portion 30 A.
- Plural through-holes 30 a for allowing drift of gas therethrough are formed in the gas passing portion 30 A.
- gases are provided onto a substrate 14 through the through-holes 30 a .
- the encircling portion 30 B may be provided in an annular shape in plan view.
- a gas channel 34 is provided on the showerhead 30 .
- the showerhead 30 and the gas channel 34 may be welded together.
- a space 36 is provided between the gas channel 34 and the gas passing portion 30 A.
- a gas introducing port 34 a is provided at the center of the gas channel 34 . Gas is supplied into the space 36 via the gas introducing port 34 a.
- a material gas source 40 , a carrier gas source 42 , a reaction gas source 44 and a cleaning gas source 46 are prepared as gas sources.
- a precursor containing C and F is stored in the material gas source 40 .
- An example of the precursor stored in the material gas source 40 is DMDMOS (Dimethyldimethoxysilane).
- a precursor under liquid state is stored in the material gas source 40 , and the vapor of the precursor is supplied to the chamber 10 with a carrier gas from the carrier gas source 42 .
- the carrier gas is, for example, noble gas such as He or Ar.
- the reaction gas source 44 is filled with, for example, O 2 gas.
- the cleaning gas source 46 is filled with NF 3 or C 2 F 6 as cleaning gas.
- Gas supply or no gas supply to the chamber 10 from the material gas source 40 , the carrier gas source 42 , the reaction gas source 44 and the cleaning gas source 46 , and gas flow rates thereof are adjusted by valves 50 , 52 , 54 , and 56 , respectively.
- Gas supplied into the chamber 10 is exhausted to the outside via, for example, an exhaust duct 16 provided between the chamber 10 and the showerhead 30 .
- a valve 18 and a pump 20 are attached to an exhaust pipe connected to the exhaust duct 16 , and the opening degree of the valve 18 and the pumping ability of the pump 20 are adjusted, thereby enabling determination of the pressure inside the chamber 10 .
- FIG. 2 is a cross-sectional view showing a configuration example of the susceptor 12 .
- a base metal 12 a is formed of aluminum or a material containing aluminum.
- the heater 13 may be provided inside the base metal 12 a .
- the surface of the base metal 12 a is covered by an anodized layer 12 b .
- the anodized layer is, for example, a layer containing AlO 2 .
- the anodized layer 12 b has cracks 12 c .
- the base metal 12 a formed of aluminum or the material containing aluminum expands at a high temperature, but the anodized layer 12 b does not so expand at a high temperature. This difference in the degree of expansion may cause occurrence of the cracks 12 c in the anodized layer 12 b.
- a CF coating 12 d covers the anodized layer 12 b .
- the CF coating 12 d is filled in the cracks 12 c , and also exists on the upper surface of the anodized layer 12 b .
- the exposure of the base metal 12 a is avoided by filling the cracks 12 c with the CF coating 12 d .
- the CF coating 12 d is, for example, a fluorocarbon polymer.
- FIG. 3 is a cross-sectional view showing a configuration example of the susceptor according to another example.
- the CF coating 12 d is provided on the inner walls of the cracks 12 c and the upper surface of the anodized layer 12 b without being filled in the cracks 12 c .
- a minute irregular structure occurs on the surface of the susceptor.
- the exposure of the base metal 12 a is avoided by forming the CF coating 12 d on the inner walls of the cracks 12 c.
- FIG. 4 is a cross-sectional view showing a configuration example of the susceptor according to another example.
- the CF coating 12 d is filled in the crack 12 c .
- the CF coating 12 d is exclusively formed in the cracks 12 c to avoid the exposure of the base metal 12 a .
- the upper surface of the anodized layer 12 b is exposed. Therefore, a substrate such as a silicon wafer can be directly placed on the anodized layer 12 b.
- FIG. 5 is a cross-sectional view showing a configuration example of the susceptor according to another example.
- the CF coating 12 d is provided on the inner walls of the cracks 12 c without being filled in the cracks 12 c to avoid the exposure of the base metal 12 a .
- a minute irregular structure occurs on the surface of the susceptor.
- the upper surface of the anodized layer 12 b is exposed.
- a substrate such as a silicon wafer can be directly placed on the anodized layer 12 b.
- FIG. 6 is a flowchart showing an example of a susceptor coating method.
- the CF coating is formed on an in-situ basis in the substrate processing apparatus of FIG. 1 .
- a new susceptor is attached to the substrate processing apparatus.
- FIG. 7 is a cross-sectional view showing a configuration example of the new susceptor.
- the susceptor of FIG. 7 includes a base metal 12 a and an anodized layer 12 b covering the surface of the base metal 12 a , and no CF coating is formed.
- the susceptor 12 is positioned at a place shown in FIG. 1 .
- step 61 an initial layer is formed in the susceptor by plasma using a precursor containing C and F.
- FIG. 8 is a cross-sectional view of the susceptor which shows an example of the formed initial layer 12 e .
- the plasma may be generated by applying high frequency power to the showerhead 30 while supplying gas from the material gas source 40 and the carrier gas source 42 to a space between the susceptor 12 and the showerhead 30 .
- DMDMOS of 220 sccm as a precursor and carrier gas of 120 sccm are supplied into the substrate processing apparatus, and no oxygen gas is supplied.
- the precursor may be formed of another material containing C and F and containing no oxygen.
- the precursor and noble gas may be supplied into the substrate processing apparatus.
- another gas may be supplied additionally, but no oxygen gas is supplied.
- the pressure inside the chamber is set to 3.5 Torr, and the interval between the susceptor 12 and the showerhead 30 is set to, for example, 28 mm. Further, for example, the temperature of the susceptor is set to 400° C. by the heater 13 , and high frequency power of 3000 W is applied to the showerhead 30 .
- the initial layer 12 e is a film containing a large amount of C.
- step 62 the CF coating of polymer is formed by supplying the cleaning gas containing F to the initial layer 12 e while heating the susceptor 12 to 350° C. or more.
- FIG. 9 is a cross-sectional view of the susceptor which shows an example of the formed CF coating 12 f .
- NF 3 or C 2 F 6 from the cleaning gas source 46 is supplied to a space between the susceptor 12 and the showerhead 30 .
- An example of a processing condition for forming the CF coating 12 f is described in a column of “Cleaning” in FIG. 10 .
- the cleaning gas of 1.25 slpm and noble gas of 4.00 slpm are supplied into the chamber 10 , and no oxygen gas is supplied.
- the cleaning gas may be formed of another material containing F and containing no oxygen.
- the cleaning gas and the noble gas may be supplied into the substrate processing apparatus.
- another gas may be supplied additionally, but no oxygen gas is supplied.
- oxygen gas is supplied in the formation of the initial layer and the formation of the CF coating, the formed CF coating is removed. Therefore, in this example, the formation of the initial layer and the formation of the CF coating are performed without supplying any oxygen.
- the partial pressure ratio of the noble gas is shown in the column of “Noble gas partial pressure” of FIG. 10 .
- the partial pressure ratio of the noble gas means the occupation ratio of the partial pressure of the noble gas to the total pressure of mixed gas. Accordingly, when the noble gas partial pressure is 76%, in this example, the partial pressure of the noble gas accounts for 76% of the total pressure.
- the cleaning gas and the noble gas are supplied in the formation of the CF coating, and the partial pressure ratio of the noble gas is set to 60% or more. When the partial pressure ratio of the noble gas is set to less than 60%, it will damage the anodized layer 12 b . Therefore, the partial pressure ratio of the noble gas can be set to 60% or more.
- the partial pressure ratio of the noble gas when the partial pressure ratio of the noble gas is set to be excessively high, it is impossible to sufficiently supply F caused by the cleaning gas. When F is insufficiently supplied, a film containing much C and less F is formed. Therefore, the supply amount of F can be secured by setting the partial pressure ratio of the noble gas to 80% or less. Therefore, according to another example, the partial pressure ratio of the noble gas can be set to 60% or more and 80% or less. As described above, in the formation of the CF coating, the partial pressure ratio of the noble gas is set to 60% or more, thereby enabling suppression of damage to the anodized layer 12 b , and also the partial pressure ratio of the noble gas is set to 80% or less, thereby enabling supply of a sufficient amount of F to be secured.
- the chamber pressure in the processing of “Cleaning” is set to 1.8 Torr.
- the formation of the initial layer 12 e described above is performed under the condition that the internal pressure of the substrate processing apparatus is set to 4 Torr or less, and the formation of the CF coating is performed under the condition that the internal pressure of the substrate processing apparatus is set to 2 Torr or less, which enables selective formation of the CF coating on the susceptor. That is, the CF coating can be intensively formed on the susceptor, and CF coating on parts around the susceptor can be suppressed.
- the interval between the susceptor 12 and the showerhead 30 is set to 26 mm or more in the formation of the initial layer 12 e described above, thereby enabling dense plasma to be generated on the susceptor 12 side, and enabling sparse plasma to be generated on the showerhead 30 side.
- the formation of the initial layer 12 e is performed under the condition that the inter-electrode distance is set to 26 mm or more while the internal pressure of the substrate processing apparatus is set to 4 Torr or less, and the formation of the CF coating is performed under the condition that the internal pressure of the substrate processing apparatus is set to 2 Tort or less, thereby enabling selective CF coating on the susceptor.
- the film thickness of the CF coating formed on the susceptor 12 is larger than the film thickness of the CF coating formed on the showerhead 30 facing the susceptor 12
- the temperature of the susceptor is set to 400° C. in the formation of the CF coating.
- the formation of the initial layer 12 e and the formation of the CF coating 12 f can be performed under the condition that the temperature of the susceptor 12 is set to 350° C. or more and 400° C. or less.
- the formation of the initial layer 12 e and the CF coating 12 f at high temperatures of 350° C. or more enables the formation of the CF coating of polymer.
- the CF coating of polymer is a stable film which is not removed by, for example, oxygen plasma or the like.
- the forming process at the temperature of 350° C. or more enables the formation of robust CF coating of polymer.
- the CF coating formed at a susceptor temperature of less than 350° C. becomes amorphous. Amorphous CF coating is easily peeled off.
- step 63 it is determined whether or not the formation of the initial layer in step 61 and the formation of the CF coating in step 62 have been performed at a predetermined number of cycles. When the processing in steps 61 and 62 has not been performed at the predetermined number of cycles, the processing in these steps is performed again.
- the processing in steps 61 and 62 is performed, for example, at 1000 cycles or more. By performing the processing in steps 61 and 62 at the predetermined number of cycles, for example, the CF coating 12 d in FIGS. 2 and 3 is formed.
- the CF coating By forming the CF coating through a series of processing as described above, it is possible to fill cracks occurring in the anodized layer 12 b during or before the formation of the CF coating, and suppress exposure of the base metal 12 a . That is, even when there is any crack in the anodized layer 12 b , the exposure of the base metal 12 a is suppressed by the CF coating 12 d.
- Step 64 is a step of processing the substrate by using the susceptor 12 having the CF coating 12 d formed thereon.
- the processing of the substrate is, for example, film formation on the substrate, modification of a film of the substrate, or etching of the film of the substrate, which is performed with plasma or without plasma.
- the substrate is placed on the susceptor 12 , and a plasma treatment is performed on the substrate.
- the substrate is, for example, a wafer made of a wide bandgap semiconductor such as silicon carbide or GaN, or a silicon wafer.
- the CF coating may be applied to the susceptor again after the processing on the substrate is repeated for a plurality of times. For example, placement of the substrate on the susceptor 12 after the formation of the CF coating and execution of the plasma treatment on the substrate are performed for a plurality of times, and then the CF coating 12 d is formed again by the method described above. As described above, the CF coating can be performed periodically in the intervals in the semiconductor process.
Abstract
Examples of a susceptor for supporting a substrate includes a base metal formed of aluminum or a material containing aluminum, an anodized layer covering a surface of the base metal and having cracks therein, and a CF coating of polymer provided in the cracks such that the exposure of the base metal is avoided.
Description
- Examples are described which relate to a susceptor and a susceptor coating method.
- A susceptor for supporting a substrate includes a base metal and an anodized layer covering the base metal. The base metal may be formed of aluminum or a material containing aluminum. The anodized layer is a layer formed by anodizing the base metal. There is a case where the base metal is exposed due to cracks occurring in the anodized layer.
- When the exposed base metal is exposed to cleaning gas, gas containing aluminum may be generated. At this time, the gas containing aluminum may cause generation of foreign matters containing aluminum on a substrate as a processing target to be subjected to a plasma treatment. For example, the base metal is exposed to cleaning gas containing F to generate AlF, and the thus-generated AlF gasifies. The gasifying AlF serves as a particle source during the plasma treatment of the substrate. As an example, Al and SiOC chemically react with each other, whereby a film of AlOC may be formed on the substrate. Also, AlOC may remain as a contamination source in a chamber.
- Some examples described herein may address the above-described problems. Some examples described herein may provide a susceptor and a susceptor coating method that can enhance the quality of substrate processing.
- In some examples, a susceptor includes a base metal formed of aluminum or a material containing aluminum, an anodized layer covering a surface of the base metal and having cracks therein, and a CF coating of polymer provided in the cracks.
-
FIG. 1 is a diagram showing an example of a substrate processing apparatus; -
FIG. 2 is a cross-sectional view showing an example of the susceptor, -
FIG. 3 is a cross-sectional view showing another example of the susceptor, -
FIG. 4 is a cross-sectional view showing another example of the susceptor, -
FIG. 5 is a cross-sectional view showing another example of the susceptor; -
FIG. 6 is a flowchart showing an example of a susceptor coating method; -
FIG. 7 is a cross-sectional view showing an example of the new susceptor; -
FIG. 8 shows an example of the formed initial layer; -
FIG. 9 shows an example of the formed CF coating; and -
FIG. 10 is a table showing an example of a processing condition. - A susceptor and a susceptor coating method will be described with reference to the drawings. The same or corresponding constituent elements are represented by the same reference signs, and duplicative description thereof may be omitted.
-
FIG. 1 is a diagram showing a configuration example of a substrate processing apparatus. This substrate processing apparatus can be provided, for example, as a PECVD apparatus. The substrate processing apparatus may or may not contain a gas supply system. Asusceptor 12 is provided in achamber 10. Thesusceptor 12 includes asubstrate supporting portion 12A, and asupport pole 12B for supporting thesubstrate supporting portion 12A. A substrate as a processing target can be placed on thesusceptor 12. The substrate is, for example, a Si wafer. Aheater 13 for heating the susceptor may be provided inside thesusceptor 12. A parallel plate electrode is provided by thesusceptor 12 and ashowerhead 30 provided thereon. By providing thesusceptor 12 and theshowerhead 30 as the parallel plate electrode, capacitive coupling plasma (CCP) may be generated mainly between thesusceptor 12 and theshowerhead 30. For example, thesusceptor 12 is grounded, and high frequency power is applied to theshowerhead 30. - The
showerhead 30 includes agas passing portion 30A provided so as to face thesusceptor 12, and anencircling portion 30B for encircling thegas passing portion 30A. Plural through-holes 30 a for allowing drift of gas therethrough are formed in thegas passing portion 30A. Various kinds of gases are provided onto asubstrate 14 through the through-holes 30 a. Theencircling portion 30B may be provided in an annular shape in plan view. - A
gas channel 34 is provided on theshowerhead 30. According to one example, theshowerhead 30 and thegas channel 34 may be welded together. Aspace 36 is provided between thegas channel 34 and thegas passing portion 30A. Agas introducing port 34 a is provided at the center of thegas channel 34. Gas is supplied into thespace 36 via thegas introducing port 34 a. - According to one example, a
material gas source 40, acarrier gas source 42, areaction gas source 44 and acleaning gas source 46 are prepared as gas sources. A precursor containing C and F is stored in thematerial gas source 40. An example of the precursor stored in thematerial gas source 40 is DMDMOS (Dimethyldimethoxysilane). A precursor under liquid state is stored in thematerial gas source 40, and the vapor of the precursor is supplied to thechamber 10 with a carrier gas from thecarrier gas source 42. The carrier gas is, for example, noble gas such as He or Ar. Thereaction gas source 44 is filled with, for example, O2 gas. Thecleaning gas source 46 is filled with NF3 or C2F6 as cleaning gas. - Gas supply or no gas supply to the
chamber 10 from thematerial gas source 40, thecarrier gas source 42, thereaction gas source 44 and thecleaning gas source 46, and gas flow rates thereof are adjusted byvalves chamber 10 is exhausted to the outside via, for example, anexhaust duct 16 provided between thechamber 10 and theshowerhead 30. For example, avalve 18 and apump 20 are attached to an exhaust pipe connected to theexhaust duct 16, and the opening degree of thevalve 18 and the pumping ability of thepump 20 are adjusted, thereby enabling determination of the pressure inside thechamber 10. -
FIG. 2 is a cross-sectional view showing a configuration example of thesusceptor 12. Abase metal 12 a is formed of aluminum or a material containing aluminum. Theheater 13 may be provided inside thebase metal 12 a. The surface of thebase metal 12 a is covered by ananodized layer 12 b. The anodized layer is, for example, a layer containing AlO2. According to one example, the anodizedlayer 12 b hascracks 12 c. Thebase metal 12 a formed of aluminum or the material containing aluminum expands at a high temperature, but the anodizedlayer 12 b does not so expand at a high temperature. This difference in the degree of expansion may cause occurrence of thecracks 12 c in the anodizedlayer 12 b. - In the example of
FIG. 2 , aCF coating 12 d covers the anodizedlayer 12 b. Specifically, theCF coating 12 d is filled in thecracks 12 c, and also exists on the upper surface of the anodizedlayer 12 b. The exposure of thebase metal 12 a is avoided by filling thecracks 12 c with theCF coating 12 d. TheCF coating 12 d is, for example, a fluorocarbon polymer. -
FIG. 3 is a cross-sectional view showing a configuration example of the susceptor according to another example. TheCF coating 12 d is provided on the inner walls of thecracks 12 c and the upper surface of the anodizedlayer 12 b without being filled in thecracks 12 c. As a result, a minute irregular structure occurs on the surface of the susceptor. The exposure of thebase metal 12 a is avoided by forming theCF coating 12 d on the inner walls of thecracks 12 c. -
FIG. 4 is a cross-sectional view showing a configuration example of the susceptor according to another example. TheCF coating 12 d is filled in thecrack 12 c. TheCF coating 12 d is exclusively formed in thecracks 12 c to avoid the exposure of thebase metal 12 a. In this case, the upper surface of the anodizedlayer 12 b is exposed. Therefore, a substrate such as a silicon wafer can be directly placed on the anodizedlayer 12 b. -
FIG. 5 is a cross-sectional view showing a configuration example of the susceptor according to another example. TheCF coating 12 d is provided on the inner walls of thecracks 12 c without being filled in thecracks 12 c to avoid the exposure of thebase metal 12 a. As a result, a minute irregular structure occurs on the surface of the susceptor. The upper surface of the anodizedlayer 12 b is exposed. In this case, a substrate such as a silicon wafer can be directly placed on the anodizedlayer 12 b. -
FIG. 6 is a flowchart showing an example of a susceptor coating method. The CF coating is formed on an in-situ basis in the substrate processing apparatus ofFIG. 1 . First, instep 60, a new susceptor is attached to the substrate processing apparatus.FIG. 7 is a cross-sectional view showing a configuration example of the new susceptor. The susceptor ofFIG. 7 includes abase metal 12 a and ananodized layer 12 b covering the surface of thebase metal 12 a, and no CF coating is formed. When thissusceptor 12 is attached to the substrate processing apparatus, thesusceptor 12 is positioned at a place shown inFIG. 1 . - Next, the processing proceeds to step 61. In
step 61, an initial layer is formed in the susceptor by plasma using a precursor containing C and F.FIG. 8 is a cross-sectional view of the susceptor which shows an example of the formedinitial layer 12 e. The plasma may be generated by applying high frequency power to theshowerhead 30 while supplying gas from thematerial gas source 40 and thecarrier gas source 42 to a space between the susceptor 12 and theshowerhead 30. - An example of a processing condition for forming the
initial layer 12 e is described in a column of “Deposition” inFIG. 10 . In this example, DMDMOS of 220 sccm as a precursor and carrier gas of 120 sccm are supplied into the substrate processing apparatus, and no oxygen gas is supplied. The precursor may be formed of another material containing C and F and containing no oxygen. In the formation of the initial layer, only the precursor and noble gas may be supplied into the substrate processing apparatus. In another example, another gas may be supplied additionally, but no oxygen gas is supplied. The pressure inside the chamber is set to 3.5 Torr, and the interval between the susceptor 12 and theshowerhead 30 is set to, for example, 28 mm. Further, for example, the temperature of the susceptor is set to 400° C. by theheater 13, and high frequency power of 3000 W is applied to theshowerhead 30. Theinitial layer 12 e is a film containing a large amount of C. - Next, the processing proceeds to step 62. In
step 62, the CF coating of polymer is formed by supplying the cleaning gas containing F to theinitial layer 12 e while heating thesusceptor 12 to 350° C. or more.FIG. 9 is a cross-sectional view of the susceptor which shows an example of the formedCF coating 12 f. NF3 or C2F6 from the cleaninggas source 46 is supplied to a space between the susceptor 12 and theshowerhead 30. An example of a processing condition for forming theCF coating 12 f is described in a column of “Cleaning” inFIG. 10 . In this example, the cleaning gas of 1.25 slpm and noble gas of 4.00 slpm are supplied into thechamber 10, and no oxygen gas is supplied. The cleaning gas may be formed of another material containing F and containing no oxygen. In the formation of the CF coating, only the cleaning gas and the noble gas may be supplied into the substrate processing apparatus. In another example, another gas may be supplied additionally, but no oxygen gas is supplied. When oxygen gas is supplied in the formation of the initial layer and the formation of the CF coating, the formed CF coating is removed. Therefore, in this example, the formation of the initial layer and the formation of the CF coating are performed without supplying any oxygen. - The partial pressure ratio of the noble gas is shown in the column of “Noble gas partial pressure” of
FIG. 10 . The partial pressure ratio of the noble gas means the occupation ratio of the partial pressure of the noble gas to the total pressure of mixed gas. Accordingly, when the noble gas partial pressure is 76%, in this example, the partial pressure of the noble gas accounts for 76% of the total pressure. In the example ofFIG. 10 , it is shown that the cleaning gas and the noble gas are supplied in the formation of the CF coating, and the partial pressure ratio of the noble gas is set to 60% or more. When the partial pressure ratio of the noble gas is set to less than 60%, it will damage the anodizedlayer 12 b. Therefore, the partial pressure ratio of the noble gas can be set to 60% or more. - On the other hand, when the partial pressure ratio of the noble gas is set to be excessively high, it is impossible to sufficiently supply F caused by the cleaning gas. When F is insufficiently supplied, a film containing much C and less F is formed. Therefore, the supply amount of F can be secured by setting the partial pressure ratio of the noble gas to 80% or less. Therefore, according to another example, the partial pressure ratio of the noble gas can be set to 60% or more and 80% or less. As described above, in the formation of the CF coating, the partial pressure ratio of the noble gas is set to 60% or more, thereby enabling suppression of damage to the anodized
layer 12 b, and also the partial pressure ratio of the noble gas is set to 80% or less, thereby enabling supply of a sufficient amount of F to be secured. - In
FIG. 10 , it is shown that the chamber pressure in the processing of “Cleaning” is set to 1.8 Torr. For example, the formation of theinitial layer 12 e described above is performed under the condition that the internal pressure of the substrate processing apparatus is set to 4 Torr or less, and the formation of the CF coating is performed under the condition that the internal pressure of the substrate processing apparatus is set to 2 Torr or less, which enables selective formation of the CF coating on the susceptor. That is, the CF coating can be intensively formed on the susceptor, and CF coating on parts around the susceptor can be suppressed. - Furthermore, the interval between the susceptor 12 and the
showerhead 30 is set to 26 mm or more in the formation of theinitial layer 12 e described above, thereby enabling dense plasma to be generated on thesusceptor 12 side, and enabling sparse plasma to be generated on theshowerhead 30 side. In particular, the formation of theinitial layer 12 e is performed under the condition that the inter-electrode distance is set to 26 mm or more while the internal pressure of the substrate processing apparatus is set to 4 Torr or less, and the formation of the CF coating is performed under the condition that the internal pressure of the substrate processing apparatus is set to 2 Tort or less, thereby enabling selective CF coating on the susceptor. In this example, the film thickness of the CF coating formed on thesusceptor 12 is larger than the film thickness of the CF coating formed on theshowerhead 30 facing thesusceptor 12 - In the column of “Lower electrode temp” in the processing of “Cleaning” in
FIG. 10 , it is shown that the temperature of the susceptor is set to 400° C. in the formation of the CF coating. The formation of theinitial layer 12 e and the formation of theCF coating 12 f can be performed under the condition that the temperature of thesusceptor 12 is set to 350° C. or more and 400° C. or less. The formation of theinitial layer 12 e and theCF coating 12 f at high temperatures of 350° C. or more enables the formation of the CF coating of polymer. The CF coating of polymer is a stable film which is not removed by, for example, oxygen plasma or the like. The forming process at the temperature of 350° C. or more enables the formation of robust CF coating of polymer. For example, the CF coating formed at a susceptor temperature of less than 350° C. becomes amorphous. Amorphous CF coating is easily peeled off. - Next, the processing proceeds to step 63. In
step 63, it is determined whether or not the formation of the initial layer instep 61 and the formation of the CF coating instep 62 have been performed at a predetermined number of cycles. When the processing insteps steps steps CF coating 12 d inFIGS. 2 and 3 is formed. - By forming the CF coating through a series of processing as described above, it is possible to fill cracks occurring in the anodized
layer 12 b during or before the formation of the CF coating, and suppress exposure of thebase metal 12 a. That is, even when there is any crack in the anodizedlayer 12 b, the exposure of thebase metal 12 a is suppressed by theCF coating 12 d. - Next, the processing proceeds to step 64.
Step 64 is a step of processing the substrate by using thesusceptor 12 having theCF coating 12 d formed thereon. The processing of the substrate is, for example, film formation on the substrate, modification of a film of the substrate, or etching of the film of the substrate, which is performed with plasma or without plasma. For example, after forming theCF coating 12 d, the substrate is placed on thesusceptor 12, and a plasma treatment is performed on the substrate. The substrate is, for example, a wafer made of a wide bandgap semiconductor such as silicon carbide or GaN, or a silicon wafer. - The CF coating may be applied to the susceptor again after the processing on the substrate is repeated for a plurality of times. For example, placement of the substrate on the
susceptor 12 after the formation of the CF coating and execution of the plasma treatment on the substrate are performed for a plurality of times, and then theCF coating 12 d is formed again by the method described above. As described above, the CF coating can be performed periodically in the intervals in the semiconductor process.
Claims (20)
1. A susceptor comprising:
a base metal formed of aluminum or a material containing aluminum;
an anodized layer covering a surface of the base metal and having cracks therein; and
a CF coating of polymer provided in the cracks.
2. The susceptor according to claim 1 , wherein the CF coating is filled in the cracks, and also exists on an upper surface of the anodized layer.
3. The susceptor according to claim 1 , wherein the CF coating is formed on inner walls of the cracks and an upper surface of the anodized layer without being filled in the cracks.
4. The susceptor according to claim 1 , wherein the CF coating is filled in the cracks, and an upper surface of the anodized layer is exposed.
5. The susceptor according to claim 1 , wherein the CF coating is provided on inner walls of the cracks without being filled in the cracks, and an upper surface of the anodized layer is exposed.
6. The susceptor according to claim 1 , wherein the anodized layer contains AlO2.
7. The susceptor according to claim 1 , further comprising a heater provided inside the base metal.
8. A susceptor coating method comprising:
attaching a susceptor including a base metal formed of aluminum or a material containing aluminum, and an anodized layer covering a surface of the base metal to a substrate processing apparatus;
repeating, for a plurality of times, forming an initial layer on the susceptor with plasma using a precursor containing C and F and supply of cleaning gas containing F to the initial layer while heating the susceptor to 350° C. or more to form a CF coating of polymer.
9. The susceptor coating method according to claim 8 , wherein the formation of the initial layer and the formation of the CF coating are performed under the condition that the temperature of the susceptor is set to 350° C. or more and 400° C. or less.
10. The susceptor coating method according to claim 8 , wherein the precursor is DMDMOS (Dimethyldimethoxysilane).
11. The susceptor coating method according to claim 8 , wherein the cleaning gas is NF3 or C2F6.
12. The susceptor coating method according to claim 8 , wherein
the precursor and the cleaning gas contain no oxygen,
only the precursor and noble gas are supplied into the substrate processing apparatus in the formation of the initial layer, and
only the cleaning gas and the noble gas are supplied into the substrate processing apparatus in the formation of the CF coating.
13. The susceptor coating method according to claim 8 , wherein the formation of the initial layer and the formation of the CF coating are performed without supplying oxygen.
14. The susceptor coating method according to claim 8 , wherein the cleaning gas and noble gas are supplied in the formation of the CF coating, and a partial pressure ratio of the noble gas is set to 60% or more and 80% or less.
15. The susceptor coating method according to claim 8 , wherein the formation of the initial layer is performed under the condition that the internal pressure of the substrate processing apparatus is set to 4 Torr or less, and the formation of the CF coating is performed under the condition that the internal pressure of the substrate processing apparatus is set to 2 Torr or less.
16. The susceptor coating method according to claim 8 , wherein in the formation of the initial layer, high frequency power is applied to a showerhead facing the susceptor to form plasma, and an interval between the susceptor and the showerhead is set to 26 mm or more.
17. The susceptor coating method according to claim 8 , wherein the film thickness of the CF coating formed on the susceptor is larger than the film thickness of the CF coating formed on a showerhead facing the susceptor.
18. The susceptor coating method according to claim 8 , wherein cracks occur in the anodized layer during or before the formation of the CF coating, and the CF coating is formed in the cracks.
19. The susceptor coating method according to claim 8 , wherein cracks exist in the anodized layer, and exposure of the base metal is suppressed by the CF coating.
20. The susceptor coating method according to claim 8 , further comprising performing placement of a substrate on the susceptor after the formation of the CF coating and execution of a plasma treatment on the substrate for a plurality of times, and then forming the CF coating again.
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US17/126,275 US11359302B2 (en) | 2018-10-03 | 2020-12-18 | Susceptor having CF coating |
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US16/150,380 US20200109484A1 (en) | 2018-10-03 | 2018-10-03 | Susceptor and susceptor coating method |
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KR20200102357A (en) | 2019-02-20 | 2020-08-31 | 에이에스엠 아이피 홀딩 비.브이. | Apparatus and methods for plug fill deposition in 3-d nand applications |
TW202044325A (en) | 2019-02-20 | 2020-12-01 | 荷蘭商Asm Ip私人控股有限公司 | Method of filling a recess formed within a surface of a substrate, semiconductor structure formed according to the method, and semiconductor processing apparatus |
TW202100794A (en) | 2019-02-22 | 2021-01-01 | 荷蘭商Asm Ip私人控股有限公司 | Substrate processing apparatus and method for processing substrate |
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KR20200108242A (en) | 2019-03-08 | 2020-09-17 | 에이에스엠 아이피 홀딩 비.브이. | Method for Selective Deposition of Silicon Nitride Layer and Structure Including Selectively-Deposited Silicon Nitride Layer |
JP2020167398A (en) | 2019-03-28 | 2020-10-08 | エーエスエム・アイピー・ホールディング・ベー・フェー | Door opener and substrate processing apparatus provided therewith |
KR20200116855A (en) | 2019-04-01 | 2020-10-13 | 에이에스엠 아이피 홀딩 비.브이. | Method of manufacturing semiconductor device |
KR20200123380A (en) | 2019-04-19 | 2020-10-29 | 에이에스엠 아이피 홀딩 비.브이. | Layer forming method and apparatus |
KR20200125453A (en) | 2019-04-24 | 2020-11-04 | 에이에스엠 아이피 홀딩 비.브이. | Gas-phase reactor system and method of using same |
KR20200130121A (en) | 2019-05-07 | 2020-11-18 | 에이에스엠 아이피 홀딩 비.브이. | Chemical source vessel with dip tube |
KR20200130652A (en) | 2019-05-10 | 2020-11-19 | 에이에스엠 아이피 홀딩 비.브이. | Method of depositing material onto a surface and structure formed according to the method |
JP2020188255A (en) | 2019-05-16 | 2020-11-19 | エーエスエム アイピー ホールディング ビー.ブイ. | Wafer boat handling device, vertical batch furnace, and method |
USD947913S1 (en) | 2019-05-17 | 2022-04-05 | Asm Ip Holding B.V. | Susceptor shaft |
USD975665S1 (en) | 2019-05-17 | 2023-01-17 | Asm Ip Holding B.V. | Susceptor shaft |
KR20200141002A (en) | 2019-06-06 | 2020-12-17 | 에이에스엠 아이피 홀딩 비.브이. | Method of using a gas-phase reactor system including analyzing exhausted gas |
KR20200143254A (en) | 2019-06-11 | 2020-12-23 | 에이에스엠 아이피 홀딩 비.브이. | Method of forming an electronic structure using an reforming gas, system for performing the method, and structure formed using the method |
KR20210005515A (en) | 2019-07-03 | 2021-01-14 | 에이에스엠 아이피 홀딩 비.브이. | Temperature control assembly for substrate processing apparatus and method of using same |
JP2021015791A (en) | 2019-07-09 | 2021-02-12 | エーエスエム アイピー ホールディング ビー.ブイ. | Plasma device and substrate processing method using coaxial waveguide |
CN112216646A (en) | 2019-07-10 | 2021-01-12 | Asm Ip私人控股有限公司 | Substrate supporting assembly and substrate processing device comprising same |
KR20210010307A (en) | 2019-07-16 | 2021-01-27 | 에이에스엠 아이피 홀딩 비.브이. | Substrate processing apparatus |
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KR20210010816A (en) | 2019-07-17 | 2021-01-28 | 에이에스엠 아이피 홀딩 비.브이. | Radical assist ignition plasma system and method |
US11643724B2 (en) | 2019-07-18 | 2023-05-09 | Asm Ip Holding B.V. | Method of forming structures using a neutral beam |
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CN112309900A (en) | 2019-07-30 | 2021-02-02 | Asm Ip私人控股有限公司 | Substrate processing apparatus |
CN112309899A (en) | 2019-07-30 | 2021-02-02 | Asm Ip私人控股有限公司 | Substrate processing apparatus |
US11587815B2 (en) | 2019-07-31 | 2023-02-21 | Asm Ip Holding B.V. | Vertical batch furnace assembly |
US11227782B2 (en) | 2019-07-31 | 2022-01-18 | Asm Ip Holding B.V. | Vertical batch furnace assembly |
US11587814B2 (en) | 2019-07-31 | 2023-02-21 | Asm Ip Holding B.V. | Vertical batch furnace assembly |
KR20210018759A (en) | 2019-08-05 | 2021-02-18 | 에이에스엠 아이피 홀딩 비.브이. | Liquid level sensor for a chemical source vessel |
USD965524S1 (en) | 2019-08-19 | 2022-10-04 | Asm Ip Holding B.V. | Susceptor support |
USD965044S1 (en) | 2019-08-19 | 2022-09-27 | Asm Ip Holding B.V. | Susceptor shaft |
JP2021031769A (en) | 2019-08-21 | 2021-03-01 | エーエスエム アイピー ホールディング ビー.ブイ. | Production apparatus of mixed gas of film deposition raw material and film deposition apparatus |
USD979506S1 (en) | 2019-08-22 | 2023-02-28 | Asm Ip Holding B.V. | Insulator |
KR20210024423A (en) | 2019-08-22 | 2021-03-05 | 에이에스엠 아이피 홀딩 비.브이. | Method for forming a structure with a hole |
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KR20210029663A (en) | 2019-09-05 | 2021-03-16 | 에이에스엠 아이피 홀딩 비.브이. | Substrate processing apparatus |
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KR20210054983A (en) | 2019-11-05 | 2021-05-14 | 에이에스엠 아이피 홀딩 비.브이. | Structures with doped semiconductor layers and methods and systems for forming same |
US11501968B2 (en) | 2019-11-15 | 2022-11-15 | Asm Ip Holding B.V. | Method for providing a semiconductor device with silicon filled gaps |
KR20210062561A (en) | 2019-11-20 | 2021-05-31 | 에이에스엠 아이피 홀딩 비.브이. | Method of depositing carbon-containing material on a surface of a substrate, structure formed using the method, and system for forming the structure |
KR20210065848A (en) | 2019-11-26 | 2021-06-04 | 에이에스엠 아이피 홀딩 비.브이. | Methods for selectivley forming a target film on a substrate comprising a first dielectric surface and a second metallic surface |
CN112951697A (en) | 2019-11-26 | 2021-06-11 | Asm Ip私人控股有限公司 | Substrate processing apparatus |
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CN112885692A (en) | 2019-11-29 | 2021-06-01 | Asm Ip私人控股有限公司 | Substrate processing apparatus |
JP2021090042A (en) | 2019-12-02 | 2021-06-10 | エーエスエム アイピー ホールディング ビー.ブイ. | Substrate processing apparatus and substrate processing method |
KR20210070898A (en) | 2019-12-04 | 2021-06-15 | 에이에스엠 아이피 홀딩 비.브이. | Substrate processing apparatus |
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KR20210095050A (en) | 2020-01-20 | 2021-07-30 | 에이에스엠 아이피 홀딩 비.브이. | Method of forming thin film and method of modifying surface of thin film |
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KR20210132605A (en) | 2020-04-24 | 2021-11-04 | 에이에스엠 아이피 홀딩 비.브이. | Vertical batch furnace assembly comprising a cooling gas supply |
US11898243B2 (en) | 2020-04-24 | 2024-02-13 | Asm Ip Holding B.V. | Method of forming vanadium nitride-containing layer |
KR20210132600A (en) | 2020-04-24 | 2021-11-04 | 에이에스엠 아이피 홀딩 비.브이. | Methods and systems for depositing a layer comprising vanadium, nitrogen, and a further element |
KR20210134869A (en) | 2020-05-01 | 2021-11-11 | 에이에스엠 아이피 홀딩 비.브이. | Fast FOUP swapping with a FOUP handler |
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Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6159301A (en) * | 1997-12-17 | 2000-12-12 | Asm Japan K.K. | Substrate holding apparatus for processing semiconductor |
US20170066011A1 (en) * | 2015-09-04 | 2017-03-09 | Apple Inc. | Methods for applying a coating over laser marking |
US9605736B1 (en) * | 2013-05-31 | 2017-03-28 | Rct Systems, Inc. | High temperature electromagnetic actuator |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20020033183A1 (en) * | 1999-05-29 | 2002-03-21 | Sheng Sun | Method and apparatus for enhanced chamber cleaning |
KR100742276B1 (en) * | 2004-11-10 | 2007-07-24 | 삼성전자주식회사 | Etching solution for removing a low-k dielectric layer and etching method for the low-k dielectric layer using the etching solution |
JP2010272614A (en) | 2009-05-20 | 2010-12-02 | Asm Japan Kk | Semiconductor substrate processing method |
-
2018
- 2018-10-03 US US16/150,380 patent/US20200109484A1/en not_active Abandoned
-
2020
- 2020-12-18 US US17/126,275 patent/US11359302B2/en active Active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6159301A (en) * | 1997-12-17 | 2000-12-12 | Asm Japan K.K. | Substrate holding apparatus for processing semiconductor |
US9605736B1 (en) * | 2013-05-31 | 2017-03-28 | Rct Systems, Inc. | High temperature electromagnetic actuator |
US20170066011A1 (en) * | 2015-09-04 | 2017-03-09 | Apple Inc. | Methods for applying a coating over laser marking |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20210125853A1 (en) * | 2019-10-24 | 2021-04-29 | Asm Ip Holding B.V. | Susceptor for semiconductor substrate processing |
US11764101B2 (en) * | 2019-10-24 | 2023-09-19 | ASM IP Holding, B.V. | Susceptor for semiconductor substrate processing |
WO2022093597A1 (en) * | 2020-10-26 | 2022-05-05 | Applied Materials, Inc. | Semiconductor chamber components with high-performance coating |
US11515195B2 (en) | 2020-10-26 | 2022-11-29 | Applied Materials, Inc. | Semiconductor chamber components with high-performance coating |
WO2023172299A1 (en) * | 2022-03-11 | 2023-09-14 | Applied Materials, Inc. | Semiconductor chamber components with multi-layer coating |
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