JP4564973B2 - プラズマ処理装置 - Google Patents
プラズマ処理装置 Download PDFInfo
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- JP4564973B2 JP4564973B2 JP2007016881A JP2007016881A JP4564973B2 JP 4564973 B2 JP4564973 B2 JP 4564973B2 JP 2007016881 A JP2007016881 A JP 2007016881A JP 2007016881 A JP2007016881 A JP 2007016881A JP 4564973 B2 JP4564973 B2 JP 4564973B2
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F25—REFRIGERATION OR COOLING; COMBINED HEATING AND REFRIGERATION SYSTEMS; HEAT PUMP SYSTEMS; MANUFACTURE OR STORAGE OF ICE; LIQUEFACTION SOLIDIFICATION OF GASES
- F25B—REFRIGERATION MACHINES, PLANTS OR SYSTEMS; COMBINED HEATING AND REFRIGERATION SYSTEMS; HEAT PUMP SYSTEMS
- F25B39/00—Evaporators; Condensers
- F25B39/02—Evaporators
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67109—Apparatus for thermal treatment mainly by convection
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F28—HEAT EXCHANGE IN GENERAL
- F28F—DETAILS OF HEAT-EXCHANGE AND HEAT-TRANSFER APPARATUS, OF GENERAL APPLICATION
- F28F2210/00—Heat exchange conduits
- F28F2210/02—Heat exchange conduits with particular branching, e.g. fractal conduit arrangements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/20—Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
- H01J2237/2001—Maintaining constant desired temperature
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- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- Mechanical Engineering (AREA)
- Thermal Sciences (AREA)
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- Drying Of Semiconductors (AREA)
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Description
本発明の他の目的は、電極の面内における冷媒の熱伝達率αを制御し、被加工試料の面内の温度分布を任意に制御できるようにしたプラズマ処理装置及びプラズマ処理方法を提供することにある。
図1は、本発明の一実施例になるプラズマ処理装置の全体的なシステム構成を示す模式図である。プラズマ処理装置は、真空容器内に配置された処理室100を有し、この処理室100の内部には静電吸着電極を備えた試料台1が配置されている。また、処理室100にはその内部を排気して減圧するための真空ポンプ等の真空排気装置20が接続されている。処理室100の上部には電極プレート15が設けられており、これにアンテナ電源21が接続されている。なお、処理室100の上部には、処理ガスを供給するシャワープレート(図示略)などのガス導入手段も設けられている。
これにより、冷媒の熱伝達率が上昇する乾き度領域において冷媒の流速を下げることで、冷媒の熱伝達率の上昇を抑制した。また、第二流路2−2から第三流路2−3に向けては、冷媒流路2の断面積を減少することで、冷媒の熱伝達率の低下を抑制した。
Claims (5)
- 真空処理室内に導入された処理ガスをプラズマ化し、該プラズマにて試料台の静電吸着電極に載置された被加工試料の表面処理を行うプラズマ処理装置において、
前記試料台でかつ前記静電吸着電極の下部に設けられ、冷凍サイクルの蒸発器を構成する冷媒流路と、
前記冷媒流路に冷却用冷媒を供給、排出する手段を有し、
前記試料台の冷媒流路が冷媒供給口と冷媒排出口との間に形成され、該冷媒供給口側から該冷媒排出口へ順次縦列に接続された少なくとも3つの流路領域を有し、該少なくとも3つの流路領域の中間部の流路領域の断面積が他の流路領域の断面積よりも大きく、
前記少なくとも3つの流路領域の内壁には凹凸形状が形成されており、
該少なくとも3つの流路領域の中間部領域の前記凹凸の高さが、他の流路領域の前記凹凸の高さよりも低いことを特徴とするプラズマ処理装置。 - 請求項1記載のプラズマ処理装置において、
前記試料台に設けられた前記冷媒流路は、複数の環状流路と、該複数の環状流路間を順次接続する複数の連絡流路とで構成されていることを特徴とするプラズマ処理装置。 - 請求項2記載のプラズマ処理装置において、
前記複数の環状流路間を順次接続する前記複数の連絡流路が、前記試料台の中心を挟んで該試料台の面内で各々対向した位置に設置されていることを特徴とするプラズマ処理装置。 - 請求項1記載のプラズマ処理装置において、
前記試料台に設けられた前記冷媒流路は同一面内に設けられ、前記断面積の異なる複数の領域が連続して設けられた構成であることを特徴とするプラズマ処理装置。 - 請求項1記載のプラズマ処理装置において、
前記試料台の同一面内に、2つの前記冷媒供給口と2つの前記冷媒排出口が設けられ、前記各冷媒供給口と各冷媒排出口との間に、各々独立した前記冷媒流路が設けられており、前記各冷媒流路は、第一流路、第二流路、及び第三流路が縦列に接続されており、
前記各冷媒流路において、前記第二流路は前記第一流路よりも断面積が拡大し、前記第三流路は前記第二流路よりも断面積が縮小していることを特徴とするプラズマ処理装置。
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JP2007016881A JP4564973B2 (ja) | 2007-01-26 | 2007-01-26 | プラズマ処理装置 |
US11/676,593 US20080178608A1 (en) | 2007-01-26 | 2007-02-20 | Plasma processing apparatus and plasma processing method |
US13/091,770 US8955579B2 (en) | 2007-01-26 | 2011-04-21 | Plasma processing apparatus and plasma processing method |
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JP2007016881A JP4564973B2 (ja) | 2007-01-26 | 2007-01-26 | プラズマ処理装置 |
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JP2010123716A Division JP4886876B2 (ja) | 2010-05-31 | 2010-05-31 | プラズマ処理装置及びプラズマ処理方法 |
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JP2008186856A JP2008186856A (ja) | 2008-08-14 |
JP4564973B2 true JP4564973B2 (ja) | 2010-10-20 |
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US20110207243A1 (en) | 2011-08-25 |
US8955579B2 (en) | 2015-02-17 |
US20080178608A1 (en) | 2008-07-31 |
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