JP7365815B2 - 載置台及び基板処理装置 - Google Patents
載置台及び基板処理装置 Download PDFInfo
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Description
一実施形態に係る基板処理装置1について、図1を用いて説明する。図1は、一実施形態に係る基板処理装置1の一例を示す断面模式図である。
基台18の内部に設けられた流路19に、所定の温度に冷却された冷媒を流すことによって基板Wを冷却する。基台18の内部にはリフトピン等の貫通孔等があるため、流路19の設計時には貫通孔等をよけて流路を設計する。このため、流路は複雑になり、貫通孔をよけた流路部分等が基板温度の特異点となって抜熱均一性が悪くなる場合がある。
次に、載置面18aの温度と流路19の高さとの関係式を導出した結果について、図2を参照して説明する。図2は、一実施形態に係る載置面の温度分布を示す関係式の一例を示す図である。
レイノルズ数Reは、冷媒の速度をv、代表長さをL、動粘度をμとすると式(5)にて示される。
流路19を流れる冷媒の流量をqとすると、流路19内の冷媒の速度vは、式(6)にて示される。
代表長さLは、抜熱に寄与する長さであるから、流路19の幅wを一定とすると、代表長さLは流路19の高さhに等しく、L=hが成り立つ。
式(7)は、レイノルズ数Reは流路19の高さによらず一定であることを示す。
Nu=0.664Re1/2Pr1/3・・・式(8)
Prはプラントル数である。レイノルズ数Reは流路19の高さによらず一定であるため、式(8)は、ヌセルト数Nuは流路19の高さによらず一定であることを示す。
λは熱伝導率であり、式(9)から熱伝達率αが流路19の高さhに反比例することがわかる。式(9)を式(4)に代入すると、式(10)が導かれる。
ΔT=Q((h'/λ')+(h/Nuλ))・・・式(10)
以上の結果から、本実施形態では、載置面18aの温度と流路の高さとの関係式を参照して載置面18aの温度分布に対して温度の均一性を図るために流路19の高さを決定する。つまり、本実施形態では、載置面18aの温度が相対的に高い部分に対応する流路19の高さ方向の長さは、載置面18aの温度が相対的に低い部分に対応する流路19の高さ方向の長さよりも短くする。
(流路形状とシミュレーション結果)
まず、流路19の断面形状を変える一例として流路19の高さを変えた場合の基台18表面の温度分布についてシミュレーションを行った結果について、図5を参照しながら説明する。図5は、一実施形態に係る流路の高さと基台18の載置面18aの温度分布のシミュレーション結果の一例を示す図である。
次に、一実施形態の変形例に係る流路19の断面形状について、図6を参照して説明する。図6は、一実施形態の変形例に係る流路19の断面形状の一例を示す図である。図6(a)~(c)は、流路19の上面19aがフラットである。図6(a)~(c)では、流路19の上面19aの位置は変えず、下面19bの高さを変えることで流路19の断面形状を変えて流速を変化させ、これにより、流路19における抜熱を制御する例である。流路19の下面19bは図6(a)のフラットに限られず、図6(b)及び(c)に示すように傾斜を有してもよい。
14 載置台
16 電極プレート
18 基台
19 流路
19a 流路の上面
19b 流路の下面
19c 冷媒の供給口
19d 冷媒の排出口
20 静電チャック
22a、22b 配管
30 上部電極
32 部材
34 天板
36 支持体
38 ガス供給管
40 ガスソース群
42 バルブ群
44 流量制御器群
46 シールド
48 バッフルプレート
80 制御部
W 基板
Claims (7)
- 静電チャックに基板を載置する載置台であって、
基台と、前記基台の載置面に載置される前記静電チャックと、前記載置面に沿って内部に形成され、熱交換媒体の供給口から排出口まで熱交換媒体が通流する流路と、を有し、
前記流路の上面と前記載置面との距離は、前記供給口から前記排出口までの間一定であり、
前記供給口から前記排出口までの間の前記流路の上面の幅は一定であり、
前記上面と垂直方向の前記流路の断面形状は、前記流路の位置に応じて異なり、
前記熱交換媒体の温度と前記基台の載置面の温度との温度差をΔTとしたとき、以下の式(A)に基づき、前記流路の位置に応じた前記基台の載置面の温度が所定の温度となるように前記流路の位置に応じた前記流路の高さ方向の長さが定まる、載置台。
ΔT=Q((h'/λ')+(h/Nuλ))・・・式(A)
ΔT:熱交換媒体の温度と基台の載置面の温度との温度差
Q :基台の載置面へ入熱する熱量
h' :基台の載置面から流路の上面までの高さ(一定)
λ' :基台の熱伝導率(一定)
h :流路の高さ方向の長さ
Nu:ヌセルト数
λ :熱伝導率 - 前記載置面の温度が相対的に高い部分に対応する前記流路の断面積は、前記載置面の温度が相対的に低い部分に対応する前記流路の断面積よりも小さい、
請求項1に記載の載置台。 - 前記載置面の温度が相対的に高い部分に対応する前記流路の高さ方向の長さは、前記載置面の温度が相対的に低い部分に対応する前記流路の高さ方向の長さよりも短い、
請求項1又は2に記載の載置台。 - 前記流路の高さ方向の長さは、前記流路の下面の高さを変更することにより定める、
請求項3に記載の載置台。 - プラズマ処理又は熱処理が行われるチャンバと、前記チャンバの内部にて静電チャックに基板を載置する載置台と、を有する基板処理装置であって、
前記載置台は、基台と、前記基台の載置面に載置される前記静電チャックと、前記載置面に沿って内部に形成され、熱交換媒体の供給口から排出口まで熱交換媒体が通流する流路と、を有し、
前記流路の上面と前記載置面との距離は、前記供給口から前記排出口までの間一定であり、
前記供給口から前記排出口までの間の前記流路の上面の幅は一定であり、
前記上面と垂直方向の前記流路の断面形状は、前記流路の位置に応じて異なり、
前記熱交換媒体の温度と前記基台の載置面の温度との温度差をΔTとしたとき、以下の式(A)に基づき、前記流路の位置に応じた前記基台の載置面の温度が所定の温度となるように前記流路の位置に応じた前記流路の高さ方向の長さが定まる、基板処理装置。
ΔT:熱交換媒体の温度と基台の載置面の温度との温度差
Q :基台の載置面へ入熱する熱量
h' :基台の載置面から流路の上面までの高さ(一定)
λ' :基台の熱伝導率(一定)
h :流路の高さ方向の長さ
Nu:ヌセルト数
λ :熱伝導率 - 静電チャックに基板を載置する載置台であって、
基台と、前記基台の載置面に載置される前記静電チャックと、前記載置面に沿って内部に形成され、熱交換媒体の供給口から排出口まで熱交換媒体が通流する流路と、を有し、
前記流路の上面と前記載置面との距離は、前記供給口から前記排出口までの間一定であり、
前記上面と垂直方向の前記流路の断面形状は、前記流路の位置に応じて異なり、前記流路の前記断面形状の断面積は前記供給口から前記排出口に向かって徐々に狭くなる、載置台。 - 前記供給口から前記排出口までの間の前記流路の上面の幅は一定であり、
前記流路の高さ方向の長さは、前記供給口から前記排出口に向かって徐々に狭くなる、
請求項6に記載の載置台。
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