JP5710591B2 - プロセスチャンバ壁上にシリコンコーティングを使用した残留フッ素ラジカルの除去の促進 - Google Patents
プロセスチャンバ壁上にシリコンコーティングを使用した残留フッ素ラジカルの除去の促進 Download PDFInfo
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- JP5710591B2 JP5710591B2 JP2012506092A JP2012506092A JP5710591B2 JP 5710591 B2 JP5710591 B2 JP 5710591B2 JP 2012506092 A JP2012506092 A JP 2012506092A JP 2012506092 A JP2012506092 A JP 2012506092A JP 5710591 B2 JP5710591 B2 JP 5710591B2
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims description 161
- 229910052710 silicon Inorganic materials 0.000 title claims description 161
- 239000010703 silicon Substances 0.000 title claims description 161
- 238000000034 method Methods 0.000 title claims description 119
- 238000000576 coating method Methods 0.000 title claims description 74
- 239000011248 coating agent Substances 0.000 title claims description 71
- 229910052731 fluorine Inorganic materials 0.000 title claims description 26
- 239000011737 fluorine Substances 0.000 title claims description 26
- 239000007789 gas Substances 0.000 claims description 98
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 45
- 239000001301 oxygen Substances 0.000 claims description 45
- 229910052760 oxygen Inorganic materials 0.000 claims description 45
- 239000000758 substrate Substances 0.000 claims description 38
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims description 18
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 12
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 6
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 6
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 6
- 229910052785 arsenic Inorganic materials 0.000 claims description 6
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 claims description 6
- 229910052796 boron Inorganic materials 0.000 claims description 6
- 229910052799 carbon Inorganic materials 0.000 claims description 6
- 229910052732 germanium Inorganic materials 0.000 claims description 6
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 6
- 229910052757 nitrogen Inorganic materials 0.000 claims description 6
- 229910052698 phosphorus Inorganic materials 0.000 claims description 6
- 239000011574 phosphorus Substances 0.000 claims description 6
- 239000002243 precursor Substances 0.000 claims description 4
- 238000009832 plasma treatment Methods 0.000 claims 2
- 239000010410 layer Substances 0.000 description 56
- 239000000203 mixture Substances 0.000 description 18
- 239000002019 doping agent Substances 0.000 description 14
- 150000002500 ions Chemical class 0.000 description 9
- 238000005229 chemical vapour deposition Methods 0.000 description 5
- 238000009826 distribution Methods 0.000 description 5
- 230000004907 flux Effects 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 239000002356 single layer Substances 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 238000005137 deposition process Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 2
- WTEOIRVLGSZEPR-UHFFFAOYSA-N boron trifluoride Chemical compound FB(F)F WTEOIRVLGSZEPR-UHFFFAOYSA-N 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 238000000280 densification Methods 0.000 description 2
- 238000007654 immersion Methods 0.000 description 2
- 229910000077 silane Inorganic materials 0.000 description 2
- 229910015900 BF3 Inorganic materials 0.000 description 1
- 108010000020 Platelet Factor 3 Proteins 0.000 description 1
- CQXADFVORZEARL-UHFFFAOYSA-N Rilmenidine Chemical compound C1CC1C(C1CC1)NC1=NCCO1 CQXADFVORZEARL-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- YBGKQGSCGDNZIB-UHFFFAOYSA-N arsenic pentafluoride Chemical compound F[As](F)(F)(F)F YBGKQGSCGDNZIB-UHFFFAOYSA-N 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 230000001186 cumulative effect Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 239000010419 fine particle Substances 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- OBCUTHMOOONNBS-UHFFFAOYSA-N phosphorus pentafluoride Chemical compound FP(F)(F)(F)F OBCUTHMOOONNBS-UHFFFAOYSA-N 0.000 description 1
- WKFBZNUBXWCCHG-UHFFFAOYSA-N phosphorus trifluoride Chemical compound FP(F)F WKFBZNUBXWCCHG-UHFFFAOYSA-N 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32458—Vessel
- H01J37/32467—Material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
- C23C16/4404—Coatings or surface treatment on the inside of the reaction chamber or on parts thereof
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32412—Plasma immersion ion implantation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
- H01J37/32449—Gas control, e.g. control of the gas flow
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32458—Vessel
- H01J37/32477—Vessel characterised by the means for protecting vessels or internal parts, e.g. coatings
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
- H01J37/32853—Hygiene
- H01J37/32862—In situ cleaning of vessels and/or internal parts
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
- H01J37/32853—Hygiene
- H01J37/32871—Means for trapping or directing unwanted particles
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/223—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a gaseous phase
- H01L21/2236—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a gaseous phase from or into a plasma phase
Description
Claims (11)
- 基板を処理するための装置であって、
内部容積を画定するチャンバ本体を有するプロセスチャンバであり、前記内部容積の内部でフッ素系のプラズマ処理をするように構成されている、前記プロセスチャンバと、
前記チャンバ本体の内表面上に配置されたシリコン含有コーティングであり、シリコンおよび酸素を含む第1の層と、前記第1の層を覆って配置された第2の層とを備え、前記第2の層が少なくとも35原子パーセントのシリコン(Si)であるシリコン含有コーティングとを備え、
前記第2の層が、前記第2の層の外側表面近くの前記第2の層中の酸素の第2の濃度よりも高い前記第1の層と前記第2の層との界面近傍の酸素の第1の濃度をさらに含む、装置。 - 前記シリコン含有コーティングが、前記内部容積を画定する前記チャンバ本体の表面を実質的に覆っている、請求項1に記載の装置。
- 前記シリコン含有コーティングの少なくとも外側部分が基本的にシリコンから成る、請求項1に記載の装置。
- 前記シリコン含有コーティングが、
前記第1の層と前記第2の層との間に配置され、シリコンを含む第3の層と、
前記第3の層と前記第2の層との間に配置され、シリコンおよび酸素を含む第4の層と
をさらに備えている、請求項1に記載の装置。 - 前記第2の層の前記外側表面近くの酸素の前記濃度が実質的にゼロである、請求項1に記載の装置。
- 前記シリコン含有コーティングが、ホウ素、ヒ素、ゲルマニウム、炭素、窒素、およびリンのうちの少なくとも1つをさらに含む、請求項1ないし5のいずれか一項に記載の装置。
- プロセスチャンバ内でシリコン含有コーティングを形成するための方法であって、
前記プロセスチャンバの内部容積へシリコン含有ガスおよび酸素含有ガスを含む第1のプロセスガスを供給することであり、前記プロセスチャンバが前記内部容積の内部でフッ素系のプラズマ処理をするように構成されている、前記供給することと、
第1の層および第2の層を備えるシリコン含有コーティングを形成することであり、前記第1の層がシリコンおよび酸素を含み、前記第1の層が少なくとも部分的に前記第1のプロセスガスから前記プロセスチャンバの内表面上の少なくとも一部の上に形成され、前記第2の層が前記第1の層を覆って形成され、前記第2の層が少なくとも35原子パーセントのシリコンである、前記形成することと、
を含む方法。 - 前記シリコン含有コーティングが、シリコンを含む第3の層と、シリコンおよび酸素を含む第4の層とをさらに含み、
前記方法が、
前記第1の層と前記第2の層との間に前記第3の層を形成することと、
前記第3の層と前記第2の層との間に前記第4の層を形成することと
をさらに含む、請求項7に記載の方法。 - 前記第2の層が酸素をさらに含み、前記第1の層と前記第2の層との界面近傍の前記第2の層中の酸素の第1の濃度が、前記第2の層の外側表面近くの前記第2の層中の酸素の第2の濃度よりも高い、請求項7に記載の方法。
- 前記プロセスチャンバ内に基板を設置することと、
前記プロセスチャンバへフッ素含有ガスプラズマ前駆物質を供給することと、
前記フッ素含有ガスから前記プロセスチャンバ内にプラズマを形成することと、
前記プラズマを用いて前記基板を処理することと
をさらに含む、請求項7ないし9のいずれか一項に記載の方法。 - 前記第1のプロセスガスが、ホウ素、ヒ素、ゲルマニウム、炭素、窒素、およびリンのうちの少なくとも1つをさらに含み、かつ前記フッ素含有ガスが、ホウ素、ヒ素、ゲルマニウム、炭素、窒素、およびリンのうちの少なくとも1つをさらに含む、請求項10に記載の方法。
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US17087909P | 2009-04-20 | 2009-04-20 | |
US61/170,879 | 2009-04-20 | ||
US12/758,167 US8642128B2 (en) | 2009-04-20 | 2010-04-12 | Enhanced scavenging of residual fluorine radicals using silicon coating on process chamber walls |
PCT/US2010/030700 WO2010123707A2 (en) | 2009-04-20 | 2010-04-12 | Enhanced scavenging of residual fluorine radicals using silicon coating on process chamber walls |
US12/758,167 | 2010-04-12 |
Publications (2)
Publication Number | Publication Date |
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JP2012524410A JP2012524410A (ja) | 2012-10-11 |
JP5710591B2 true JP5710591B2 (ja) | 2015-04-30 |
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Application Number | Title | Priority Date | Filing Date |
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JP2012506092A Active JP5710591B2 (ja) | 2009-04-20 | 2010-04-12 | プロセスチャンバ壁上にシリコンコーティングを使用した残留フッ素ラジカルの除去の促進 |
Country Status (7)
Country | Link |
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US (1) | US8642128B2 (ja) |
EP (1) | EP2422359A4 (ja) |
JP (1) | JP5710591B2 (ja) |
KR (1) | KR101519036B1 (ja) |
CN (1) | CN102405511B (ja) |
TW (1) | TWI502652B (ja) |
WO (1) | WO2010123707A2 (ja) |
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EP2422359A4 (en) | 2013-07-03 |
TW201041052A (en) | 2010-11-16 |
TWI502652B (zh) | 2015-10-01 |
EP2422359A2 (en) | 2012-02-29 |
CN102405511A (zh) | 2012-04-04 |
KR101519036B1 (ko) | 2015-05-12 |
WO2010123707A2 (en) | 2010-10-28 |
WO2010123707A3 (en) | 2011-01-13 |
US20100267224A1 (en) | 2010-10-21 |
US8642128B2 (en) | 2014-02-04 |
CN102405511B (zh) | 2014-06-11 |
JP2012524410A (ja) | 2012-10-11 |
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