WO2017212546A1 - 基板処理装置、炉口部および半導体装置の製造方法並びにプログラム - Google Patents

基板処理装置、炉口部および半導体装置の製造方法並びにプログラム Download PDF

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Publication number
WO2017212546A1
WO2017212546A1 PCT/JP2016/066915 JP2016066915W WO2017212546A1 WO 2017212546 A1 WO2017212546 A1 WO 2017212546A1 JP 2016066915 W JP2016066915 W JP 2016066915W WO 2017212546 A1 WO2017212546 A1 WO 2017212546A1
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Prior art keywords
gas
nozzle
gas supply
reaction tube
supply system
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PCT/JP2016/066915
Other languages
English (en)
French (fr)
Inventor
大野　幹雄
純史 梅川
花島　建夫
宏朗 平松
Original Assignee
株式会社日立国際電気
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Application filed by 株式会社日立国際電気 filed Critical 株式会社日立国際電気
Priority to JP2018522204A priority Critical patent/JP6616895B2/ja
Priority to CN201680084578.7A priority patent/CN109075070A/zh
Priority to PCT/JP2016/066915 priority patent/WO2017212546A1/ja
Priority to KR1020187034914A priority patent/KR20190002659A/ko
Priority to KR1020217018250A priority patent/KR102326377B1/ko
Publication of WO2017212546A1 publication Critical patent/WO2017212546A1/ja
Priority to US16/213,568 priority patent/US10640872B2/en
Priority to US16/833,014 priority patent/US11365482B2/en
Priority to US17/745,496 priority patent/US20220275515A1/en

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/52—Controlling or regulating the coating process
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/34—Nitrides
    • C23C16/345—Silicon nitride
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
    • C23C16/45546—Atomic layer deposition [ALD] characterized by the apparatus specially adapted for a substrate stack in the ALD reactor
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45561—Gas plumbing upstream of the reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45578—Elongated nozzles, tubes with holes
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
    • C23C16/463—Cooling of the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67109—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
    • H01L21/6735—Closed carriers
    • H01L21/67389—Closed carriers characterised by atmosphere control
    • H01L21/67393—Closed carriers characterised by atmosphere control characterised by the presence of atmosphere modifying elements inside or attached to the closed carrierl

Definitions

  • the present invention relates to a substrate processing apparatus, a furnace opening, a method for manufacturing a semiconductor device, and a program.
  • a semiconductor manufacturing apparatus as an example of a substrate processing apparatus includes a vertical apparatus.
  • this type of semiconductor manufacturing apparatus has a large number of on-off valves (valves) and a gas supply system of two or more systems in order to enable various film formation.
  • the piping from the on-off valve closest to the furnace opening to the furnace opening is a pipe including a flexible pipe.
  • the length of this pipe was about 500 to 3000 mm.
  • an object of the present invention is to provide a configuration in which an on-off valve is provided in the vicinity of a furnace port portion.
  • a treatment chamber configured at least by a reaction tube and a furnace port provided at a lower portion of the reaction tube, and provided in the furnace port, and stands from the furnace port to the inside of the reaction tube.
  • a control unit for controlling the gas supply system and the blocking unit so as to supply gas from the nozzle into the processing chamber.
  • the structure by which the on-off valve was attached to the vicinity of the furnace port part can be provided.
  • 1 is a schematic configuration diagram of a part of a substrate processing apparatus suitably used in an embodiment of the present invention, and is a cross-sectional view of a reaction tube.
  • It is a schematic block diagram of the controller of the substrate processing apparatus used suitably by embodiment of this invention.
  • It is a piping block diagram of the conventional furnace port part vicinity.
  • a substrate processing apparatus is configured as an example of a semiconductor manufacturing apparatus used for manufacturing a semiconductor device. Specifically, a treatment chamber composed of at least a reaction tube and a furnace port provided at the lower part of the reaction tube, a nozzle provided in the furnace port and rising from the furnace port to the inside of the reaction tube, and a nozzle A processing gas supply system provided upstream of the processing gas, a shut-off portion configured to be provided at a boundary between the processing gas supply system and the nozzle, and a gas passing from the nozzle into the processing chamber in conjunction with the processing gas supply system. And at least a controller that controls the processing gas supply system and the shutoff unit.
  • the furnace port portion is configured so that a shut-off portion connected to a nozzle rising from the inner wall of the furnace port portion to the inside of the reaction tube is not provided with a pipe between the outer wall of the furnace port portion. .
  • a cooling mechanism so that the shut-off valve can be cooled.
  • a furnace port unit capable of local exhaust as a countermeasure against heat accumulation in the furnace port. The cooling mechanism and the furnace port unit will be described later.
  • the furnace port part and the shut-off valve are integrated (for example, a pipe including a flexible pipe is not provided between the furnace port part and the shut-off valve).
  • a pipe including a flexible pipe is not provided between the furnace port part and the shut-off valve.
  • the processing furnace 202 includes a heater 207 as a heating unit (heating mechanism).
  • the heater 207 has a cylindrical shape and is configured to include a heater wire and a heat insulating material (not shown).
  • the lower part of the heater 207 is vertically installed by being supported by a heater base (not shown) as a holding plate.
  • the heater 207 also functions as an activation mechanism (excitation unit) that activates (excites) the processing gas with heat.
  • a reaction tube 203 having a single tube structure that constitutes a reaction vessel (processing vessel) concentrically with the heater 207 is disposed.
  • the reaction tube 203 is made of a heat resistant material such as quartz (SiO 2 ) or silicon carbide (SiC).
  • the reaction tube 203 is formed in a ceiling shape in which the lower end is opened and the upper end is closed with a flat wall.
  • the upper end portion (hereinafter also referred to as a ceiling portion) of the reaction tube is configured to be thick from the viewpoint of ensuring strength.
  • the side wall of the reaction tube 203 includes a cylindrical portion formed in a cylindrical shape, and a gas supply area 222 and a gas exhaust area 224 provided on the outer wall of the cylindrical portion.
  • a processing chamber 201 is formed in the reaction tube 203 including the gas supply area 222 and the gas exhaust area 224.
  • the processing chamber 201 is configured to process a wafer 200 as a substrate. Further, the processing chamber 201 is configured to be capable of accommodating a boat 217 that can hold the wafers 200 in a state where the wafers 200 are aligned in a vertical direction in multiple stages in a horizontal posture.
  • the heater 207 is disposed so as to surround the reaction tube 203, and can heat the plurality of wafers 200 mounted on the boat 217 in the reaction tube 203 (or the processing chamber 201) to a predetermined temperature. it can.
  • the gas supply area 222 is formed so that the convex portion protrudes outside one side wall of the cylindrical portion.
  • the outer wall of the gas supply area 222 is formed outside the one side wall as a part of the outer wall of the cylindrical part of the reaction tube 203 and is concentrically formed with the cylindrical part.
  • the gas supply area 222 has a ceiling shape in which the lower end is opened and the upper end is closed by a flat wall.
  • nozzle portions 340a to 340c which will be described later, are accommodated along the length direction (vertical direction), and the boundary wall 254 constituting the boundary between the gas supply area 222 and the cylindrical portion has a gas.
  • a supply slit 235 is formed.
  • the boundary wall 254 is one side wall of the cylindrical portion, and an outer side surface thereof constitutes a side surface portion facing the gas supply area 222.
  • the generic name of the nozzle portions 340a to 340c may be described as the nozzle portion 340, and the generic names of other numbers may be similarly described.
  • the gas exhaust area 224 is formed so that the convex portion protrudes to the outside of the other side wall facing the one side wall where the gas supply area 222 having a cylindrical portion is formed.
  • the gas exhaust area 224 is disposed so as to sandwich an area where the wafer 200 of the processing chamber 201 is accommodated between the gas exhaust area 224 and the gas supply area 222.
  • the outer wall of the gas exhaust area 224 is formed outside the other side wall as a part of the outer wall of the cylindrical portion, and is concentrically formed with the cylindrical portion larger than the outer diameter of the cylindrical portion.
  • the gas exhaust area 224 has a ceiling shape in which the lower end and the upper end are closed by a flat wall.
  • a gas exhaust slit 236 is formed in a boundary wall 252 that is a wall body that forms a boundary between the gas exhaust area 224 and the cylindrical portion.
  • the boundary wall 252 is a part of the cylindrical portion, and its outer side surface constitutes a side surface part facing the gas exhaust area 224.
  • the lower end side of the reaction tube 203 is supported by a cylindrical manifold 226 as a furnace port.
  • the manifold 226 is formed of a metal such as a nickel alloy or stainless steel, or a heat resistant material such as quartz (SiO 2 ) or silicon carbide (SiC).
  • a flange is formed at the upper end portion of the manifold 226, and the lower end portion of the reaction tube 203 is installed and supported on the flange.
  • An airtight member 220 such as an O-ring is interposed between the flange and the lower end portion of the reaction tube 203 to keep the inside of the reaction tube 203 airtight.
  • a seal cap 219 is attached to the opening at the lower end of the manifold 226 through an airtight member 220 such as an O-ring, so that the opening at the lower end of the reaction tube 203, that is, the opening of the manifold 226 is airtight. It is supposed to close.
  • the seal cap 219 is formed of, for example, a metal such as nickel alloy or stainless steel, and is formed in a disk shape.
  • a boat support 218 that supports the boat 217 is provided on the seal cap 219.
  • the boat support 218 is made of a heat-resistant material such as quartz or silicon carbide, and functions as a heat insulating portion and is a support that supports the boat 217.
  • the boat 217 has a bottom plate fixed to the boat support base 218 and a top plate disposed above the bottom plate, and has a configuration in which a plurality of columns are installed between the bottom plate and the top plate. .
  • the boat 217 is made of a heat resistant material such as quartz or silicon carbide.
  • a boat rotation mechanism 267 that rotates the boat 217 is provided on the side of the seal cap 219 opposite to the processing chamber 201.
  • the rotation shaft of the boat rotation mechanism 267 passes through the seal cap and is connected to the boat support base 218.
  • the boat rotation mechanism 267 rotates the boat 217 via the boat support base 218 to rotate the wafer 200.
  • the seal cap 219 is raised and lowered in the vertical direction by a boat elevator 115 as an elevating mechanism provided outside the reaction tube 203, so that the boat 217 can be carried into and out of the processing chamber 201.
  • a nozzle support portion 350 that supports the nozzle portion 340 is installed in the manifold 226 so as to be bent in an L shape and penetrate the manifold 226.
  • three nozzle support portions 350a to 350c are installed.
  • the nozzle support part 350 is formed from materials, such as nickel alloy and stainless steel, for example.
  • a gas supply pipe 310 that supplies gas into the reaction tube 203 is connected to one end of the nozzle support portion 350 on the reaction tube 203 side via a shut-off portion 101 as a shut-off valve.
  • nozzle portions 340a to 340c are connected to the other ends of the nozzle support portions 350a to 350c, respectively.
  • the nozzle portion 340 is formed from a heat resistant material such as quartz or SiC.
  • the nozzle support part 350 and the nozzle part 340 constitute a nozzle, and the shutoff valve 101 provided at the boundary between the nozzle and the gas supply pipe 310 is fixed in the vicinity of the manifold 226.
  • the nozzle shape may be a configuration in which the nozzle portion 340 and the nozzle support portion 350 are integrated.
  • the nozzle part 340 is provided above the lower part in the gas supply area 222 along the length direction (vertical direction).
  • the nozzle portions 340a and 340c are respectively configured as I-shaped long nozzles.
  • Gas supply holes 234a and 234c for supplying gas are provided on the side surfaces of the nozzle portions 340a and 340c, respectively.
  • the gas supply holes 234a and 234c are opened so as to face the center of the reaction tube 203, respectively.
  • the nozzle portion 340b is configured as an I-shaped short tube nozzle (short nozzle).
  • the nozzle portion 340b has an opening 234b, and the tip of the nozzle portion 340b is open.
  • nozzle portions 340a to 340c are provided so that a plurality of types of gases can be supplied into the processing chamber 201.
  • the shape of the nozzle portion 340 may be, for example, an L shape instead of an I shape, and is not limited to the shape.
  • the boat 217 in a state where a plurality of batch-processed wafers 200 are stacked on the boat 217, the boat 217 is inserted into the processing chamber 201 while being supported by the boat support 218, and the heater 207 is installed.
  • the wafer 200 inserted into the processing chamber 201 is heated to a predetermined temperature.
  • the gas supply pipe 310a includes, in order from the upstream direction, a first processing gas supply source that supplies a first processing gas, a mass flow controller (MFC) 320a that is a flow rate controller (flow rate control unit), and a valve 330a that is an on-off valve.
  • MFC mass flow controller
  • the shut-off valve 101a is provided at the boundary between the gas supply pipe 310a and the nozzle support portion 350a, and is provided in the state of being close to the outside of the manifold 226.
  • the manifold 226 and the shut-off valve 101a are integrally attached without providing a flexible pipe between the manifold 226 and the shut-off valve 101a.
  • the exhaust part 102a mentioned later may be attached so that the cutoff valve 101a may be adjoined.
  • the gas supply pipe 310b includes, in order from the upstream direction, a second processing gas supply source that supplies a second processing gas, a mass flow controller (MFC) 320b that is a flow rate controller (flow rate control unit), and a valve 330b that is an on-off valve.
  • MFC mass flow controller
  • the shut-off valve 101b is provided at the boundary between the gas supply pipe 310b and the nozzle support portion 350b, and is provided in a state of being close to the outside of the manifold 226.
  • the manifold 226 and the shut-off valve 101b are integrally attached without providing a flexible pipe between the manifold 226 and the shut-off valve 101b.
  • the exhaust part 102b mentioned later may be attached so that the cutoff valve 101b may be adjoined.
  • the gas supply pipe 310c includes, in order from the upstream direction, a third processing gas supply source that supplies a third processing gas, a mass flow controller (MFC) 320c that is a flow rate controller (flow rate control unit), and a valve 330c that is an on-off valve.
  • MFC mass flow controller
  • the shut-off valve 101c is provided at the boundary between the gas supply pipe 310c and the nozzle support portion 350c, and is provided in a state close to the outside of the manifold 226.
  • the manifold 226 and the shut-off valve 101c are integrally attached without providing a flexible pipe between the manifold 226 and the shut-off valve 101c.
  • the exhaust part 102c mentioned later may be attached so that the cutoff valve 101c may be adjoined.
  • Gas supply pipes 310d to 310f for supplying an inert gas are connected to the gas supply pipes 310a to 310c on the downstream side of the valves 330a to 330c, respectively.
  • the gas supply pipes 310d to 310f are provided with MFCs 320d to 320f as flow rate controllers (flow rate control units) and valves 330d to 330f as opening / closing valves, respectively, in order from the upstream direction.
  • a first process gas supply system is mainly configured by the gas supply pipe 310a, the MFC 320a, and the valve 330a. Further, the first process gas supply source, the nozzle support part 350a, the nozzle part 340a, and the shutoff valve 101a are considered to be included in the first process gas supply system, and the first process gas supply system includes the gas supply pipe 310a, the MFC 320a, and the valve 330a. It is good also as a structure containing the 1st piping part comprised by these, the 1st boundary part containing the 1st interruption
  • the first processing gas supply system is configured to supply a reactive gas as the first processing gas.
  • a second processing gas supply system is mainly configured by the gas supply pipe 310b, the MFC 320b, and the valve 330b. Further, the second processing gas supply source, the nozzle support portion 350b, the nozzle portion 340b, and the shutoff valve 101b are considered to be included in the second processing gas supply system, and the second processing gas supply system includes the gas supply pipe 310b, the MFC 320b, and the valve 330b. It is good also as a structure including the 2nd piping part comprised by this, the 2nd boundary part containing the 2nd interruption
  • the second processing gas supply system is configured to supply a source gas as the second processing gas.
  • a third processing gas supply system is mainly configured by the gas supply pipe 310c, the MFC 320c, and the valve 330c. Further, the third processing gas supply source, the nozzle support portion 350c, the nozzle portion 340c, and the shutoff valve 101c are considered to be included in the third processing gas supply system, and the third processing gas supply system includes the gas supply pipe 310c, the MFC 320c, and the valve 330c. It is good also as a structure containing the 3rd piping part comprised by these, the 3rd boundary part containing the 3rd interruption
  • the third processing gas supply system is configured to supply a reactive gas or an inert gas that does not contribute to substrate processing as the third processing gas.
  • the configuration of the processing gas supply system and details of the shutoff valve 101 will be described later.
  • processing gas when used, it includes only the first processing gas, includes only the second processing gas, includes only the third processing gas, or includes all of them. There is.
  • processing gas supply system when used, it includes only the first processing gas supply system, only the second processing gas supply system, only the third processing gas supply system, or all of them. May be included.
  • An exhaust port 230 is provided below the gas exhaust area 224.
  • the exhaust port 230 is connected to the exhaust pipe 232.
  • the exhaust pipe 232 is evacuated through a pressure sensor 245 as a pressure detector (pressure detector) for detecting the pressure in the processing chamber 201 and an APC (Auto Pressure Controller) valve 244 as a pressure regulator (pressure adjuster).
  • a vacuum pump 246 as an apparatus is connected and configured to exhaust so that the pressure in the processing chamber 201 becomes a predetermined pressure (degree of vacuum).
  • the APC valve 244 can open and close the valve to stop evacuation / evacuation in the processing chamber 201, and further adjust the valve opening to adjust conductance to adjust the pressure in the processing chamber 201. It is an open / close valve.
  • An exhaust system is mainly configured by the exhaust pipe 232, the APC valve 244, and the pressure sensor 245.
  • a vacuum pump 246 may also be included in the exhaust system.
  • the controller 280 described later executes a process recipe described later, and as described above, (A) the transport system (boat elevator 115, boat rotation mechanism 267, etc.), (B) temperature control system (heater 207, etc.). ), (C) a processing gas supply system (blocking unit 101, MFC 320, valve 330, etc.), and (D) a gas exhaust system (APC valve 244, pressure sensor 245, etc.).
  • a temperature sensor 1 (hereinafter also referred to as a thermocouple) as a temperature detector is installed outside the reaction tube 203.
  • the power supplied to the heater 207 is adjusted based on the temperature information detected by the temperature sensor 1 so that the temperature of the processing chamber 201 has a desired temperature distribution.
  • thermocouple 1 is attached to the outside of the reaction tube 203 from a cover 2 as a protective member.
  • the cover 2 is made of a quartz member.
  • the thermocouple 1 is attached to the outside of the processing chamber 201 and is provided so as to face the heater 207 as a heating unit.
  • the thermocouple 1 is fixed by the reaction tube 203 and the cover 2.
  • thermocouples 1 Although only one thermocouple 1 is shown in FIG. 2, a plurality of thermocouples 1 may be provided. A buffer member can be provided between the thermocouple 1 and the reaction tube 203. Furthermore, although the thermocouple 1 of FIG. 2 is provided on the side wall of the reaction tube, the thermocouple 1 may be provided on the ceiling of the reaction tube 203.
  • FIGS. 5 and 6 are schematic views for explaining the processing gas supply system in the present embodiment. 5 and 6 show two processing gas supply systems in FIG. 1 in order to make the explanation of the relationship among the gas supply pipe 310, the boundary portion (the shutoff valve 101) and the nozzle easier to understand. Is. Then, the controller 280 is configured to execute a process recipe to be described later and to control (C) the processing gas supply system (the shut-off unit 101, the exhaust unit 102, the switching unit 103, and the like). Further, a processing gas supply system including a processing gas supply source, an MFC 320, a valve 330, and the like is provided on the upstream side of the switching unit (switching valve), but is omitted in FIGS.
  • a valve (switching valve) closest to the furnace opening in the gas box is a valve that switches between a gas that contributes to substrate processing and a cleaning gas.
  • a processing gas supply system (not shown) and a cleaning gas supply system (not shown) are provided on the upstream side of the switching unit (switching valve).
  • the gas supply system in this embodiment is for switching to switch between a nozzle rising from the furnace port 226 to the inside of the reaction tube 203, a boundary including at least the blocking unit 101, a gas contributing to substrate processing, and a cleaning gas.
  • a gas supply pipe 310 provided with a switching unit composed of a valve (switching valve) 103, and the boundary is connected to the gas supply pipe 310, and the gas between the switching unit and the blocking unit 101 It is preferable to provide an exhaust unit 102 which will be described later for exhausting the supply pipe including the supply pipe 310.
  • a processing gas supply system having a nozzle (first nozzle and second nozzle) rising from the furnace port portion 226 to the inside of the reaction tube and a gas supply pipe 310a provided on the upstream side of the nozzle (first nozzle).
  • First gas supply system a processing gas supply system (second gas supply system) having a gas supply pipe 310b provided upstream of the nozzle (second nozzle), a first nozzle and a first gas supply system.
  • a blocking unit 101a (first blocking unit) configured to be provided at the boundary
  • a 101b (second blocking unit) configured to be provided at the boundary between the second nozzle and the second gas supply system
  • the first A reaction gas is supplied as a first gas in the reaction tube by interlocking the shut-off portion with the first gas supply system
  • a raw material is supplied as a second gas in the reaction tube by interlocking the second shut-off portion with the second gas supply system. It is configured to supply gas.
  • the first gas supply system, the first blocking unit, the second gas supply system, and the second blocking unit are configured to be controlled by the controller 280 in FIGS. 5 and 6.
  • the first process gas is supplied from the gas supply pipe 310a through the first nozzle by providing the cutoff valve 101 (boundary portion), opening the cutoff valve 101a, and closing the cutoff valve 101b.
  • the gas supply pipe 310b and the reaction pipe 203 can be shut off to suppress the reverse diffusion of the first processing gas into the gas supply pipe 310b, while the shutoff valve 101b is opened and the shutoff valve 101a is closed.
  • the gas supply pipe 310a and the reaction tube 203 are shut off to suppress back diffusion of the first processing gas into the gas supply pipe 310a. Can do.
  • the shutoff valve 101a is closed while the shutoff valve 101b is opened and the source gas is supplied into the reaction tube 203 from the second nozzle.
  • the gas supply pipe 310a and the reaction pipe 203 are shut off, and the back diffusion of the source gas into the gas supply pipe 310a can be completely suppressed. Particles can be reduced.
  • a furnace port box for performing local exhaust of the furnace port part 226 may be provided so as to surround the furnace port part 226.
  • the furnace port box is used for countermeasures against gas leaks and heat accumulation in the furnace port part 226.
  • the inside of the furnace port box has a high temperature atmosphere of 50 ° C to 200 ° C.
  • the heat resistant temperature of the valve is about 150 ° C.
  • it is conceivable to use a heat resistant specification valve heat resistant temperature 250 to 300 ° C.
  • the operating life of the heat resistant specification valve is significantly reduced and the replacement frequency is shortened.
  • the valve can be arranged in the furnace port box even when the heat resistance temperature of the valve is exceeded.
  • a heat dissipation method using cooling water for example, a configuration in which the shutoff valve 101 is covered with a cooling block
  • Any cooling method may be used as long as it can be set to a temperature lower than the heat resistant temperature of the valve.
  • an exhaust system for discharging the gas in the reaction tube 203 is provided, and the control unit 280 closes the first blocking unit and the second blocking unit when the supply of the reaction gas or the raw material gas to the substrate in the reaction tube 203 is completed.
  • the exhaust system is controlled to discharge the unreacted source gas or reaction gas from the reaction tube 203.
  • the control unit 280 opens the first gas supply system so as to perform the cycle purge by changing the flow rate of the inert gas supplied into the reaction tube 203 in a state where the first blocking unit and the second blocking unit are opened.
  • the first blocking unit, the second gas supply system, the second blocking unit, and the exhaust system are configured to be controlled.
  • the gas supply pipe 310 between the switching part and the boundary part is configured to include a flexible pipe whose shape can be bent.
  • the flexible pipe is provided in the gas supply pipe 310, and may be, for example, a bellows shape.
  • blocking part 101 is installed in the side wall of the furnace port part 226 by the integral type (or direct connection).
  • flexible piping is provided in the furnace port box.
  • the flexible pipe is not provided in this form, but is provided in the pipe between the gas box provided with the switching unit and the furnace port box provided with the blocking unit 101.
  • the site for example, a semiconductor factory
  • the metal and the pipe for example, metal
  • the piping installed between the furnace port portion 226 and the switching unit has been configured to include flexible piping, but in this embodiment, the piping between the furnace port portion 226 and the shut-off unit 101.
  • the piping installed between them does not include flexible piping.
  • the gas supply pipe 310 is provided on the upstream side of the blocking unit 101, but the flexible pipe provided in the gas supply pipe 310 is omitted.
  • FIG. 6 is a schematic diagram illustrating a configuration in which an exhaust unit 102 is further provided so as to be adjacent to the blocking unit 101 of the gas supply system illustrated in FIG. 5.
  • an exhaust unit 102 that branches the supply pipe is installed on the upstream side of the blocking unit 101, and a vent pipe is connected to the exhaust pipe 232 by the exhaust unit 102. Due to such a configuration, the gas supply pipe 310 including the flexible pipe between the switching unit and the blocking unit 101 can be cycle purged without using the reaction tube 203.
  • the gas supply pipe 310a can be cycle purged when the source gas is supplied from the gas supply pipe 310b into the reaction tube 203, and the cleanliness in the gas supply pipe 310a is further improved. Can be improved.
  • the gas supply tube 310 can be individually cycle purged, and the gas supply tube 310 can be further purged. Cleanliness can be improved.
  • the space around the manifold 226 is small due to the configuration of the apparatus, and it is difficult to install the shut-off part 101 and the exhaust part 102. This can be realized, and improvement in maintainability can be achieved.
  • shut-off valve 101 provided close to the outside of the furnace port portion 226 will be described in detail mainly using FIGS. 7 to 10.
  • the configuration between the furnace port portion 226 and the shut-off portion 101 in the present embodiment is a configuration in which the furnace port portion 226 and the shut-off valve 101 are directly connected as shown in FIG.
  • the furnace port 226 and the shut-off valve 101a (101b) may have an integrated configuration (a configuration in which no piping is provided in appearance).
  • 7 and 8 are also diagrams showing the furnace port portion 226 to which the blocking portion 101 is added.
  • the exhaust port 102 can be integrated with the furnace port unit 226 in a state where the exhaust unit 102 is adjacent to the blocking unit 101.
  • the blocking unit 101 may be configured with a cooling mechanism.
  • the length of the piping (pipe length) installed between the furnace port portion 226 and the switching portion in FIG. 4 and the piping installed between the furnace port portion 226 and the blocking portion 101 in the present embodiment. Compare the length (pipe length). Assuming that the pipe length of the embodiment of FIG. 7 is 100 mm, the length ratio of the pipe length is about 1/5 to 1/30. Furthermore, in the embodiment of FIG. When included in the pipe, it is assumed that the length is approximately 50 mm, and the length ratio of the pipe length is about 1/10 to 1/60. Also, the ideal pipe length is zero (a configuration in which no pipe is provided).
  • FIG. 10 shows the details of the configuration in which the shut-off portion 101 is integrally attached to the furnace port portion 226 in FIG. 8, that is, the shut-off portion 101 attached so as not to provide piping on the side wall of the furnace port portion 226.
  • blocking part 101 is not shown in FIG. 10, it is provided in the multiple furnace opening part 226 by the same structure.
  • the shut-off part 101 is connected to a nozzle (or nozzle support part 350) disposed inside the furnace port part 226 at one end, and is connected to a pipe (in this embodiment, a gas supply pipe) outside the furnace port part 226 at the other end.
  • 10 is a diagram when the blocking unit 101 is in an open state, in which the gas flow path communicates from the gas supply pipe 310 to the nozzle unit 340 through the blocking unit 101. It is configured.
  • the controller 280 which is a control unit (control means), is configured as a computer having a CPU (Central Processing Unit) 121a, a RAM (Random Access Access Memory) 121b, a storage device 121c, and an I / O port 121d.
  • the RAM 121b, the storage device 121c, and the I / O port 121d are configured to exchange data with the CPU 121a via the internal bus 121e.
  • an input / output device 122 configured as a touch panel or the like is connected to the controller 280.
  • the storage device 121c is configured by, for example, a flash memory, an HDD (Hard Disk Drive), or the like.
  • a control program for controlling the operation of the substrate processing apparatus, a film forming sequence to be described later as a process recipe describing the procedure and conditions of the substrate processing, and the like are stored in a readable manner.
  • the process recipe is a combination of functions so that a predetermined result can be obtained by causing the controller 280 to execute each procedure in the substrate processing process described later, and functions as a program.
  • the process recipe, the control program, and the like are collectively referred to simply as a program.
  • the RAM 121b is configured as a memory area (work area) in which programs, data, and the like read by the CPU 121a are temporarily stored.
  • the I / O port 121d includes the above-described MFCs 320a to 320f, valves 330a to 330f, shutoff valves 101a to 101c, exhaust valves 102a to 102c, pressure sensor 245, APC valve 244, vacuum pump 246, heater 207, temperature sensor (thermocouple) ) 1, connected to the boat rotation mechanism 267, the boat elevator 115, and the like.
  • the CPU 121a is configured to read out and execute a control program from the storage device 121c, and to read out a process recipe from the storage device 121c in response to an operation command input from the input / output device 122 or the like.
  • the CPU 121a adjusts the flow rates of various gases by the MFCs 320a to 320f, the opening and closing operations of the valves 330a to 330f, the opening and closing operations of the shutoff valves 101a to 101c, and the opening and closing of the APC valve 244 in accordance with the contents of the read control program and process recipe.
  • the boat elevator 115 is configured to control the lifting and lowering operation of the boat 217 and the like.
  • the controller 280 is stored in an external storage device 123 (for example, a magnetic tape, a magnetic disk such as a flexible disk or a hard disk, an optical disk such as a CD or DVD, a magneto-optical disk such as an MO, or a semiconductor memory such as a USB memory or a memory card).
  • an external storage device 123 for example, a magnetic tape, a magnetic disk such as a flexible disk or a hard disk, an optical disk such as a CD or DVD, a magneto-optical disk such as an MO, or a semiconductor memory such as a USB memory or a memory card.
  • the above-mentioned program can be executed.
  • the storage device 121c and the external storage device 123 can be configured as computer-readable recording media. Hereinafter, these are collectively referred to simply as a recording medium.
  • the term “recording medium” may include only the storage device 121c alone, may include only the external storage device 123 alone, or may include both.
  • the substrate processing apparatus is controlled by the controller 280.
  • a boat 217 on which a predetermined number of wafers 200 are placed is inserted into the reaction tube 203, and the reaction tube 203 is hermetically closed by a seal cap 219.
  • the wafer 200 is heated to be maintained at a predetermined temperature, and a processing gas is supplied into the reaction tube 203 so that the wafer 200 is subjected to heat treatment such as heating.
  • a film forming sequence shown in FIG. 11 as a process recipe is supplied to the wafer 200 in the processing chamber 201, and the HCDS gas from the processing chamber 201 is supplied.
  • a step of removing the gas (residual gas) a step of supplying NH 3 gas to the wafer 200 in the processing chamber 201, and a step of removing the NH 3 gas (residual gas) from the processing chamber 201.
  • the SiN film is formed on the wafer 200 by performing the simultaneous cycle a predetermined number of times (one or more times).
  • substrate is synonymous with the use of the term “wafer”.
  • the inside of the processing chamber 201 that is, the space where the wafer 200 exists, is evacuated to a vacuum by a vacuum pump 246 so that a predetermined pressure (degree of vacuum) is obtained.
  • a predetermined pressure degree of vacuum
  • the vacuum pump 246 maintains a state in which it is always operated until at least the processing on the wafer 200 is completed.
  • the wafer 200 in the processing chamber 201 is heated by the heater 207 so as to reach a predetermined temperature.
  • the power supply to the heater 207 is feedback-controlled based on the temperature information detected by the temperature sensor so that the processing chamber 201 has a predetermined temperature distribution. Heating of the processing chamber 201 by the heater 207 is continuously performed at least until the processing on the wafer 200 is completed.
  • the rotation of the boat 217 and the wafers 200 by the rotation mechanism 267 is started.
  • the wafer 200 is rotated.
  • the rotation of the boat 217 and the wafer 200 by the rotation mechanism 267 is continuously performed at least until the processing on the wafer 200 is completed.
  • Step 1 a source gas (HCDS gas) is supplied to the wafer 200 in the processing chamber 201.
  • This step 1 includes at least a pre-purge process, a source gas supply process, a source gas exhaust process, and a purge process.
  • HCDS gas a source gas
  • the valves 330b and 330e are opened, and HCDS gas is caused to flow into the gas supply pipe 310b.
  • the shut-off valve 101b is closed and not supplied to the processing chamber 201.
  • the valves 330d and 330f are simultaneously opened, and N 2 gas is allowed to flow into the gas supply pipes 310a and 310c.
  • the shutoff valves 101 a and 101 c may be opened, and N 2 gas may be supplied into the processing chamber 201 at a predetermined flow rate adjusted by the MFC and exhausted from the exhaust pipe 232.
  • the exhaust valve 102b is provided adjacent to the shutoff valve 101b, the exhaust valve 102b is opened, and the HCDS gas can be exhausted from the gas supply pipe 310b to the exhaust pipe 232 via the exhaust valve 102b. Is preferred.
  • shutoff valve 101b is closed with the shutoff valves 101a and 101c being closed.
  • the APC valve 244 is kept open, and the inside of the processing chamber 201 is evacuated by the vacuum pump 246 to form a silicon (Si) -containing layer as an unreacted or first layer remaining in the processing chamber 201.
  • the contributed HCDS gas is discharged from the processing chamber 201.
  • the source gas supply step and the source gas exhaust step are sequentially executed (three times in this embodiment). At this time, the first layer is formed on the outermost surface of the wafer 200.
  • the HCDS gas is supplied to the processing chamber 201 by a short tube nozzle whose tip is opened, and in order to make the gas concentration distribution uniform, such a cyclic supply (cycle Flow).
  • the gas supply method is appropriately set according to the nozzle shape.
  • valve 330b After purge process, the valve 330b is closed and the supply of HCDS gas is stopped. At this time, the valves 330d to 330f and the shutoff valves 101a to 101c are opened, and the supply of N 2 gas into the processing chamber 201 is resumed.
  • the N 2 gas acts as a purge gas, whereby the effect of exhausting the gas remaining in the processing chamber 201 from the processing chamber 201 can be enhanced.
  • Step 1 a gas purge step for reliably discharging the gas remaining in the processing chamber 201 from the processing chamber 201 before supplying the reaction gas is included in Step 1, but the film forming sequence is shown in FIG. You may divide from 1 to step 4. FIG. 13 will be described later.
  • Step 2 After Step 1 is completed, NH 3 gas is supplied as a reaction gas to the wafer 200 in the processing chamber 201, that is, the first layer formed on the wafer 200.
  • the NH 3 gas is activated by heat and supplied to the wafer 200.
  • the opening / closing control of the valves 330a, 330d, 101a is performed in the same procedure as the opening / closing control of the valves 330b, 330e, 101b in step 1.
  • the flow rate of NH 3 gas is adjusted by MFC, and the NH 3 gas is supplied into the processing chamber 201 through the nozzle unit 340 a and exhausted from the exhaust pipe 232.
  • NH 3 gas is supplied to the wafer 200.
  • the NH 3 gas supplied to the wafer 200 reacts with at least a part of the first layer, that is, the Si-containing layer formed on the wafer 200 in Step 1.
  • the first layer is thermally nitrided by non-plasma and is changed (modified) into a second layer containing Si and N, that is, a silicon nitride layer (SiN layer).
  • a second layer containing Si and N that is, a silicon nitride layer (SiN layer).
  • plasma-excited NH 3 gas is supplied to the wafer 200, and the first layer is plasma-nitrided to change the first layer to the second layer (SiN layer). May be.
  • the valves 330a and 330d are closed, and the supply of NH 3 gas is stopped. Then, the NH 3 gas and the reaction by-product remaining in the processing chamber 201 and contributed to the formation of the second layer are discharged from the processing chamber 201 by the same processing procedure as in Step 1.
  • Step 2 includes a step of reliably discharging the gas remaining in the processing chamber 201 from the processing chamber 201 after supplying the reaction gas.
  • the procedure is to open the valves 330d to 330f and the shut-off valves 101a to 101c, continue supplying N 2 gas into the processing chamber 201, and vary the flow rate at a predetermined cycle. For example, switching between the flow rate A and the flow rate B (flow rate A> flow rate B) is performed a predetermined number of times. In the present embodiment, control is performed four times.
  • the purge process is completed by supplying N 2 gas adjusted to a predetermined flow rate into the processing chamber 201 for a predetermined time with the valves 330d to 330f and the shutoff valves 101a to 101c being opened. This completes the film forming sequence.
  • SiN having a predetermined composition and a predetermined film thickness is formed on the wafer 200.
  • a film can be formed.
  • the above cycle is preferably repeated a plurality of times. That is, it is formed by stacking the second layer (SiN layer) by making the thickness of the second layer (SiN layer) formed when the above cycle is performed once smaller than a predetermined thickness.
  • the above cycle is preferably repeated a plurality of times until the thickness of the SiN film reaches a predetermined thickness.
  • the processing gas supply for supplying the HCDS gas By closing the shut-off valve 101 connected to the processing gas supply system other than the system, the HCDS gas is not diffused into other processing gas supply systems. Accordingly, particles caused by by-products in the piping such as the gas supply pipe 310 can be reduced.
  • the pipes constituting the processing gas supply system for supplying HCDS gas are heated.
  • the range to be performed can be greatly reduced.
  • the processing gas supply system other than the processing gas supply system for supplying the HCDS gas similarly heated the piping through which the HCDS gas is diffused.
  • the gas it is not necessary to heat the piping, Even if it is a necessary gas, it may be heated to an appropriate temperature, and the range heated up to now to prevent liquefaction of HCDS can be reduced, leading to a reduction in heater costs.
  • FIG. 12 is a diagram showing the N2 gas flow rate dependency obtained by changing the flow rate of the counter N2 from two systems other than the film forming gas supply system in the processing gas supply system (three systems) shown in FIG.
  • Temperature of wafer 200 100 to 800 ° C. (preferably 400 to 750 ° C., in this embodiment, 630 ° C.) Processing chamber pressure: 5 to 4000 Pa (preferably 10 to 1332 Pa) HCDS gas supply flow rate: 1 to 2000 sccm (preferably 50 to 500 sccm) NH 3 gas supply flow rate: 100-30000 sccm N 2 gas supply flow rate: 1 to 50000 sccm SiN film thickness: 0.2 to 100 nm
  • FIG. 12 is a table comparing the film thickness average value and in-plane uniformity of the wafer 200 arranged at each of the TOP, CNT, and BTM positions in the substrate processing region with respect to the presence / absence of the counter N2 and the flow rate. Moreover, it is the table
  • the absence of the counter N2 shown in FIG. 12 corresponds to this embodiment. That is, according to the present embodiment, the shutoff valve 101 provided in the gas supply system that has been supplying the counter N2 into the processing chamber 201 is closed while the HCDS gas and the NH3 gas are being supplied. As a result, the HCDS gas and NH3 gas can be prevented from back-diffusion on the gas supply pipe 310 side, so that the counter N2 is not necessary.
  • the average film thickness of the wafer 200 arranged at each of the TOP, CNT, and BTM positions in the substrate processing region is the highest. This is because the concentration of the HCDS gas and NH 3 gas in the processing chamber 201 is high because the counter N2 does not need to be diluted.
  • the in-plane uniformity of the wafer 200 disposed at each of the TOP, CNT, and BTM positions in the substrate processing region is the lowest value. This is because the HCDS gas and NH 3 gas in the processing chamber 201 can contact the surface of the wafer 200 evenly (or entirely) without being affected by the counter N2.
  • TOP is the wafer 200 disposed at the top of the wafers 200 disposed in the substrate processing region
  • BTM is the wafer 200 disposed at the bottom of the wafers 200 disposed in the substrate processing region
  • the CNT is the wafer 200 arranged at the center of the wafers 200 arranged in the substrate processing region. For example, if a dummy wafer (side dummy wafer) is placed in Slots 1 to 4 and Slots 30 to 33 in a mini-batch furnace (all 33 slots), TOP: 29 Slot, CNT: 17 Slot, and BTM: 5 Slot.
  • the in-plane uniformity is averaged by measuring the film thickness at a predetermined location in the wafer 200 plane.
  • the inter-surface uniformity is calculated by obtaining the average value for the number of wafers 200 placed in the slots from TOP to BTM. According to the mini-batch furnace, the inter-plane average value is calculated from the in-plane average value for 25 slots.
  • FIG. 13 shows a comparison between a current film forming sequence without a shut-off valve and a film forming sequence in an embodiment having a shut-off valve. Obviously, the time required for gas replacement in the reaction tube is greatly improved in the purge process (gas replacement process) after supplying the processing gas.
  • the time required for one cycle of the current film forming sequence is 51 sec
  • the time required for one cycle of the film forming sequence in the present embodiment having the shut-off valve 101 is 41 sec. Therefore, it can be shortened by about 20% (10 sec) in one cycle.
  • the gas replacement efficiency in the reaction tube can be greatly improved by closing the shutoff valve in the purging step after supplying the processing gas. Accordingly, it is possible to shorten the time related to the purge process in the film forming sequence. Further, throughput can be improved by shortening the film forming sequence.
  • shutoff valve is configured to be provided close to the side wall of the furnace port portion, while the processing gas is being supplied from the other gas supply pipe into the reaction pipe, By closing the shut-off valve, back diffusion of the processing gas into the gas supply pipe can be suppressed.
  • the pipe heating range can be reduced and each pipe heating temperature can be optimized.
  • the temperature of the gas supply pipe is set to the temperature of the gas supply pipe even when the required temperature uniformity is not as high as the gas supply pipe. It was necessary to set, but by adding a shut-off valve, it is not necessary to improve the temperature uniformity as high as the gas supply pipe, and an inexpensive, relatively low temperature heater or a heater with a simple heat insulation structure is selected. be able to.
  • the gas replacement efficiency in the processing chamber can be improved and the film forming sequence time can be shortened by closing the shut-off valve and suppressing the gas back diffusion upstream of the supply gas pipe.
  • a vertical semiconductor manufacturing apparatus which is a kind of substrate processing apparatus has been described in detail.
  • the present invention is not limited to this, and the present invention can be applied to, for example, a horizontal semiconductor manufacturing apparatus.
  • HCDS gas in addition to HCDS gas, monochlorosilane (SiH 3 Cl, abbreviation: MCS) gas, dichlorosilane (SiH 2 Cl 2 , abbreviation: DCS) gas, trichlorosilane (SiHCl 3 , abbreviation: TCS) gas
  • MCS monochlorosilane
  • DCS dichlorosilane
  • TCS trichlorosilane
  • Inorganic halosilane source gases such as tetrachlorosilane, that is, silicon tetrachloride (SiCl 4 , abbreviation: STC) gas, octachlorotrisilane (Si 3 Cl 8 , abbreviation: OCTS) gas, and trisdimethylaminosilane (Si [N (CH 3 ) 2 ] 3 H, abbreviation: 3DMAS) gas, tetrakis
  • the source gas contains no halogen group such as monosilane (SiH 4 , abbreviation: MS) gas, disilane (Si 2 H 6 , abbreviation: DS) gas, trisilane (Si 3 H 8 , abbreviation: TS) gas, etc.
  • An inorganic silane source gas can be used.
  • NH 3 gas is used as the reaction gas.
  • the present invention is not limited to such an embodiment.
  • hydrogen nitride-based gas such as diazene (N 2 H 2 ) gas, hydrazine (N 2 H 4 ) gas, N 3 H 8 gas, or a gas containing these compounds Etc. can be used.
  • MEA gas such as ethylamine gas, trimethylamine ((CH 3 ) 3 N, abbreviation: TMA) gas, dimethylamine ((CH 3 ) 2 NH, abbreviation: DMA) gas, monomethylamine (CH 3 NH) 2 , abbreviation: MMA) methylamine gas such as gas
  • an organic hydrazine-based gas such as trimethylhydrazine ((CH 3 ) 2 N 2 (CH 3 ) H, abbreviation: TMH) gas can be used.
  • the SiN film is formed using HCDS gas as the source gas and nitrogen (N) -containing gas (nitriding gas) such as NH 3 gas as the reaction gas has been described.
  • nitrogen (N) -containing gas such as NH 3 gas
  • the present invention is not limited to such an embodiment.
  • oxygen (O) containing gas oxygen (O 2 ) gas, carbon (C) containing gas such as propylene (C 3 H 6 ) gas, trichloride
  • a boron (B) -containing gas such as boron (BCl 3 ) gas or the like
  • a SiO film, a SiON film, a SiOCN film, a SiOC film, a SiCN film, a SiBN film, a SiBCN film, or the like can be formed.
  • the order which flows each gas can be changed suitably. Even in the case where these films are formed, the film formation can be performed under the same processing conditions as in the above-described embodiment, and the same effect as in the above-described embodiment can be obtained.
  • the order in which each gas flows can be changed as appropriate. Even in the case where these films are formed, the film formation can be performed under the same processing conditions as in the above-described embodiment, and the same effect as in the above-described embodiment can be obtained. That is, the present invention can be suitably applied when forming a film containing a predetermined element such as a semiconductor element or a metal element.
  • the present invention is not limited to such an embodiment.
  • the present invention can also be suitably applied to a case where a process such as an oxidation process, a diffusion process, an annealing process, or an etching process is performed on a substrate or a film formed on the substrate.
  • a process such as an oxidation process, a diffusion process, an annealing process, or an etching process is performed on a substrate or a film formed on the substrate.
  • the above-described embodiments and modifications can be used in appropriate combination.
  • the processing conditions at this time can be set to the same processing conditions as in the above-described embodiment or modification, for example.
  • the present invention can be applied to a substrate processing apparatus for forming a film on a substrate.

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Abstract

反応管と該反応管の下部に設けられる炉口部で少なくとも構成される処理室と、前記炉口部に設けられ、前記炉口部から前記反応管内まで立上ったノズルと、前記ノズルの上流側に設けられるガス供給系と、前記ガス供給系と前記ノズルの境界に設けられるよう構成されている遮断部と、前記遮断部を前記ガス供給系と連動させて前記ノズルから前記処理室内にガスを供給するよう、前記ガス供給系及び前記遮断部をそれぞれ制御する制御部と、を備えた構成が提供される。

Description

基板処理装置、炉口部および半導体装置の製造方法並びにプログラム
本発明は、基板処理装置、炉口部および半導体装置の製造方法並びにプログラムに関する。
基板処理装置の一例としての半導体製造装置には、縦型装置があることが知られている。昨今、この種の半導体製造装置は、多様な成膜を可能にする為に開閉弁(バルブ)の個数も多く、ガス供給系も２系統以上の場合が多い。従来、図４に示すように、炉口部に最も近い開閉弁から炉口部までの配管は、フレキシブル配管を含む配管となっていた。装置のレイアウトにもよるが、この配管の長さは、５００～３０００ｍｍ程度であった。
この開閉弁までのフレキシブル配管を含む配管内に付着した副生成物が起因とされるパーティクルが反応室内に放出され基板上に付着することでデバイス特性に影響を与えることが知られている。そこで、この問題を防止する手段として、成膜ガスを供給していない配管に、Ｎ２ガスを成膜ガスの供給と同時に流す方法が、実施されている。ところが、このＮ２ガス(以後、カウンターＮ２ガスという場合がある)を供給することにより成膜ガス濃度が、反応室内で不均一となり、基板処理において膜厚均一性が悪化してしまう。
ここで、カウンターＮ２ガスを不要にする構成として、ガス供給系内の処理炉に近い配管に開閉弁を設置することが考えられるが、弁設置スペース制限、弁耐熱温度制限等の原因で実現できていない。一方、特許文献１及び特許文献２のように、開閉弁が炉口部の近くの配管に設けられる構成が図示されている。但し、これら先行技術文献には、カウンターＮ２ガスを不要にする構成については言及されていない。
特開２０１１－１８７４８５号公報 特開２００５－２８５９２２号公報
本発明の目的は、上記問題点を解決するために、炉口部の近傍に開閉弁を設ける構成を提供することである。
本発明の一態様によれば、反応管と該反応管の下部に設けられる炉口部で少なくとも構成される処理室と、前記炉口部に設けられ、前記炉口部から前記反応管内まで立上ったノズルと、前記ノズルの上流側に設けられるガス供給系と、前記ガス供給系と前記ノズルの境界に設けられるよう構成されている遮断部と、前記遮断部を前記ガス供給系と連動させて前記ノズルから前記処理室内にガスを供給するよう、前記ガス供給系及び前記遮断部をそれぞれ制御する制御部と、を備えた構成が提供される。
本発明によれば、炉口部の近傍に開閉弁が取り付けられた構成を提供することができる。
本発明の実施形態で好適に用いられる基板処理装置の概略構成図であり、処理炉部分の縦断面図である。 本発明の実施形態で好適に用いられる基板処理装置の一部の概略構成図であり、反応管の横断面図である。 本発明の実施形態で好適に用いられる基板処理装置のコントローラの概略構成図である。 従来の炉口部近傍の配管構成図である。 本発明の実施形態に好適に用いられる遮断部とガス供給管とノズルとの関係を示す模式図である。 本発明の実施形態に好適に用いられる遮断部とガス供給管とノズルとの関係を示す模式図である。 本発明の実施形態に好適に用いられる炉口部の外観図である。 本発明の実施形態に好適に用いられる炉口部の外観図である。 本発明の実施形態に好適に用いられる遮断弁の図示例である。 本発明の実施形態に好適に用いられる遮断弁の構成を示す図示例である。 本発明の実施形態に好適に用いられる遮断弁を動作させて処理ガスを供給する基板処理フローを示す図である。 本発明の実施形態に好適に用いられる遮断弁を動作させて処理ガスを供給して基板処理した結果を示す図である。 本発明の実施形態に好適に用いられる成膜シーケンスにおける遮断弁の有無比較を示す図示例である。
＜本発明の一実施形態＞
本発明の一実施形態における基板処理装置は、半導体装置の製造に使用される半導体製造装置の一例として構成されているものである。具体的には、反応管と該反応管の下部に設けられる炉口部で少なくとも構成される処理室と、炉口部に設けられ、炉口部から反応管内まで立上ったノズルと、ノズルの上流側に設けられる処理ガス供給系と、該処理ガス供給系とノズルの境界に設けられるよう構成されている遮断部と、遮断部を処理ガス供給系と連動させてノズルから処理室内にガスを供給するよう、処理ガス供給系及び遮断部をそれぞれ制御するコントローラと、を少なくとも有する構成である。
また、炉口部は、炉口部の内壁から反応管内まで立上ったノズルに接続される遮断部が、炉口部の外壁との間に配管を設けないよう取付けられるよう構成されている。このように、処理炉のほぼ真下(炉口部近傍)に遮断部が取り付けられるので、冷却機構を備え、遮断弁を冷却できるようにするのが好ましい。また、炉口部の熱こもり対策として、特に局所的な排気が可能な炉口ユニットを設けるのが好ましい。尚、これら冷却機構及び炉口ユニットについては後述する。
ここで、本実施形態において、炉口部と遮断弁とを一体とした(例えば、炉口部と遮断弁との間にフレキシブル配管を含む配管を設けない)構造のことを単に炉口部と呼ぶ場合がある。
以下、本発明の実施形態について、図１、図２等を用いて説明する。先ず、図１に示すように、処理炉２０２は加熱部（加熱機構）としてのヒータ２０７を有する。ヒータ２０７は円筒形状であり、図示しないがヒータ素線と断熱材を含むような構成である。ヒータ２０７の下部は、保持板としてのヒータベース（図示せず）に支持されることにより垂直に据え付けられる。また、ヒータ２０７は、処理ガスを熱で活性化（励起）させる活性化機構（励起部）としても機能する。
ヒータ２０７の内側には、ヒータ２０７と同心円状に反応容器（処理容器）を構成する単管構造の反応管２０３が配設されている。反応管２０３は、例えば石英（ＳｉＯ２）または炭化シリコン（ＳｉＣ）等の耐熱性材料から形成されている。反応管２０３は、下端部が開放され、上端部が平坦状の壁体で閉塞された有天井の形状で形成されている。反応管の上端部(以後、天井部ともいう)は、強度の確保という観点から厚く構成されている。反応管２０３の側壁は、円筒形状に形成された円筒部と、円筒部の外壁に設けられたガス供給エリア２２２とガス排気エリア２２４とを備えている。ガス供給エリア２２２とガス排気エリア２２４を含む反応管２０３の内部には、処理室２０１が形成されている。処理室２０１は、基板としてのウエハ２００を処理可能に構成されている。また、処理室２０１は、ウエハ２００を水平姿勢で垂直方向に多段に整列した状態で保持可能なボート２１７を収容可能に構成されている。そして、ヒータ２０７は反応管２０３を囲繞するように配置されており、反応管２０３(若しくは処理室２０１)内のボート２１７に載置された複数枚のウエハ２００を所定の温度に加熱することができる。
ガス供給エリア２２２は、凸部が円筒部の一側壁の外側に突出するように形成されている。ガス供給エリア２２２の外壁は、反応管２０３の円筒部の外壁の一部としての一側壁の外側に円筒部の外径よりも大きく、円筒部と同心円状に形成されている。ガス供給エリア２２２は、下端部が開放され、上端部が平坦状の壁体で閉塞された有天井の形状で構成されている。ガス供給エリア２２２には、その長さ方向（上下方向）に沿って後述するノズル部３４０ａ～３４０ｃが収容され、ガス供給エリア２２２と円筒部との間の境界を構成する境界壁２５４にはガス供給スリット２３５が形成されている。境界壁２５４は円筒部の一側壁であって、その外側面は、ガス供給エリア２２２に面する側面部分を構成する。以後、例えば、ノズル部３４０ａ～３４０ｃの総称を、ノズル部３４０と記載する場合があり、また、他の番号についても総称は同様に記載する場合がある。
ガス排気エリア２２４は、凸部が円筒部のガス供給エリア２２２が形成された一側壁に対向する他側壁の外側に突出するように形成されている。ガス排気エリア２２４は、ガス供給エリア２２２との間に処理室２０１のウエハ２００が収容される領域を挟むように配置されている。ガス排気エリア２２４の外壁は、円筒部の外壁の一部としての他側壁の外側に円筒部の外径よりも大きく、円筒部と同心円状に形成されている。ガス排気エリア２２４は、下端部と上端部が平坦状の壁体で閉塞された有天井の形状で構成されている。ガス排気エリア２２４と円筒部との間の境界を構成する壁体である境界壁２５２にはガス排気スリット２３６が形成されている。境界壁２５２は円筒部の一部であって、その外側面は、ガス排気エリア２２４に面する側面部分を構成する。
反応管２０３の下端側は、炉口部としての円筒体状のマニホールド２２６によって支持されている。マニホールド２２６は、例えばニッケル合金やステンレス等の金属で形成されるか、若しくは石英（ＳｉＯ２）または炭化シリコン（ＳｉＣ）等の耐熱性材料で形成されている。マニホールド２２６の上端部にはフランジが形成されており、このフランジ上に反応管２０３の下端部を設置して支持する。このフランジと反応管２０３の下端部との間にはＯリング等の気密部材２２０を介在させて反応管２０３内を気密状態にしている。
マニホールド２２６の下端の開口部には、シールキャップ２１９がＯリング等の気密部材２２０を介して気密に取り付けられており、反応管２０３の下端の開口部側、すなわちマニホールド２２６の開口部を気密に塞ぐようになっている。シールキャップ２１９は、例えばニッケル合金やステンレス等の金属で形成され、円盤状に形成されている。
シールキャップ２１９上にはボート２１７を支持するボート支持台２１８が設けられている。ボート支持台２１８は、例えば石英や炭化珪素等の耐熱性材料で構成され断熱部として機能すると共にボート２１７を支持する支持体となっている。ボート２１７はボート支持台２１８に固定された底板とその上方に配置された天板とを有しており、底板と天板との間に複数本の支柱が架設された構成を有している。ボート２１７は例えば石英や炭化珪素等の耐熱性材料で構成されている。
シールキャップ２１９の処理室２０１と反対側にはボート２１７を回転させるボート回転機構２６７が設けられている。ボート回転機構２６７の回転軸はシールキャップを貫通してボート支持台２１８に接続されており、ボート回転機構２６７によって、ボート支持台２１８を介してボート２１７を回転させることでウエハ２００を回転させる。シールキャップ２１９は反応管２０３の外部に設けられた昇降機構としてのボートエレベータ１１５によって垂直方向に昇降され、これによりボート２１７を処理室２０１内に対し搬入搬出することが可能となっている。
マニホールド２２６には、ノズル部３４０を支持するノズル支持部３５０が、Ｌ字状に屈曲されてマニホールド２２６を貫通するようにして設置されている。ここでは、３本のノズル支持部３５０ａ～３５０ｃが設置されている。ノズル支持部３５０は、例えばニッケル合金やステンレス等の材料から形成される。ノズル支持部３５０の反応管２０３側の一端には反応管２０３内へガスを供給するガス供給管３１０が遮断弁としての遮断部１０１を介してそれぞれ接続されている。
また、ノズル支持部３５０ａ～３５０ｃの他端にはノズル部３４０ａ～３４０ｃがそれぞれ接続されている。ノズル部３４０は、例えば石英またはＳｉＣ等の耐熱性材料から形成される。また、ノズル支持部３５０とノズル部３４０でノズルが構成され、このノズルとガス供給管３１０の境界に設けられている遮断弁１０１がマニホールド２２６の近傍に固定されている。更に、ノズル形状は、ノズル部３４０とノズル支持部３５０が一体化した構成であっても構わない。
ノズル部３４０はガス供給エリア２２２内の下部より上部に、その長さ方向（上下方向）に沿って設けられている。ノズル部３４０ａ、３４０ｃは、Ｉ字型のロングノズルとしてそれぞれ構成されている。ノズル部３４０ａ、３４０ｃの側面には、ガスを供給するガス供給孔２３４ａ、２３４ｃがそれぞれ設けられている。ガス供給孔２３４ａ、２３４ｃは、それぞれ反応管２０３の中心を向くように開口している。ノズル部３４０ｂは、Ｉ字型の短管ノズル(ショートノズル)として構成されている。ノズル部３４０ｂは開口部２３４ｂを有し、ノズル部３４０ｂの先端は開放されている。ガス供給エリア２２２には、３本のノズル部３４０ａ～３４０ｃが設けられており、処理室２０１内へ複数種類のガスを供給することができるように構成されている。また、ノズル部３４０の形状は、例えば、Ｉ字型ではなくＬ字型であってもよく、形状に限定されない。
以上の処理炉２０２では、バッチ処理される複数枚のウエハ２００がボート２１７に対し多段に積載された状態において、ボート２１７がボート支持台２１８で支持されながら処理室２０１に挿入され、ヒータ２０７が処理室２０１に挿入されたウエハ２００を所定の温度に加熱するようになっている。
ガス供給管３１０ａには、上流方向から順に、第１処理ガスを供給する第１処理ガス供給源、流量制御器（流量制御部）であるマスフローコントローラ（ＭＦＣ）３２０ａおよび開閉弁であるバルブ３３０ａがそれぞれ設けられている。また、遮断弁１０１ａは、ガス供給管３１０ａとノズル支持部３５０ａとの間の境界に設けられており、マニホールド２２６の外側に近接した状態で設けられている。例えば、マニホールド２２６と遮断弁１０１ａの間にフレキシブル配管を設けることなく、マニホールド２２６と遮断弁１０１ａが一体的に取り付けられる。更に、後述する排気部１０２ａが遮断弁１０１ａと隣接するように取り付けられてもよい。
ガス供給管３１０ｂには、上流方向から順に、第２処理ガスを供給する第２処理ガス供給源、流量制御器（流量制御部）であるマスフローコントローラ（ＭＦＣ）３２０ｂおよび開閉弁であるバルブ３３０ｂがそれぞれ設けられている。また、遮断弁１０１ｂは、ガス供給管３１０ｂとノズル支持部３５０ｂとの間の境界に設けられており、マニホールド２２６の外側に近接した状態で設けられている。例えば、マニホールド２２６と遮断弁１０１ｂの間にフレキシブル配管を設けることなく、マニホールド２２６と遮断弁１０１ｂが一体的に取り付けられる。更に、後述する排気部１０２ｂが遮断弁１０１ｂと隣接するように取り付けられてもよい。
ガス供給管３１０ｃには、上流方向から順に、第３処理ガスを供給する第３処理ガス供給源、流量制御器（流量制御部）であるマスフローコントローラ（ＭＦＣ）３２０ｃおよび開閉弁であるバルブ３３０ｃがそれぞれ設けられている。また、遮断弁１０１ｃは、ガス供給管３１０ｃとノズル支持部３５０ｃとの間の境界に設けられており、マニホールド２２６の外側に近接した状態で設けられている。例えば、マニホールド２２６と遮断弁１０１ｃの間にフレキシブル配管を設けることなく、マニホールド２２６と遮断弁１０１ｃが一体的に取り付けられる。更に、後述する排気部１０２ｃが遮断弁１０１ｃと隣接するように取り付けられてもよい。
ガス供給管３１０ａ～３１０ｃのバルブ３３０ａ～３３０ｃよりも下流側に、不活性ガスを供給するガス供給管３１０ｄ～３１０ｆがそれぞれ接続されている。ガス供給管３１０ｄ～３１０ｆには、上流方向から順に、流量制御器（流量制御部）であるＭＦＣ３２０ｄ～３２０ｆおよび開閉弁であるバルブ３３０ｄ～３３０ｆがそれぞれ設けられている。
主に、ガス供給管３１０ａ、ＭＦＣ３２０ａ、バルブ３３０ａにより第１処理ガス供給系が構成される。また、第１処理ガス供給源、ノズル支持部３５０ａ、ノズル部３４０ａ、遮断弁１０１ａを第１処理ガス供給系に含めて考え、第１処理ガス供給系は、ガス供給管３１０ａ、ＭＦＣ３２０ａ、バルブ３３０ａにより構成される第１配管部と、少なくとも第１遮断部１０１ａを含む第１境界部と、ノズル支持部３５０ａとノズル部３４０ａで少なくとも構成される第１ノズルとを含む構成としても良い。例えば、本実施形態において、第１処理ガス供給系は第１処理ガスとして反応ガスが供給されるよう構成されている。
主に、ガス供給管３１０ｂ、ＭＦＣ３２０ｂ、バルブ３３０ｂにより第２処理ガス供給系が構成される。また、第２処理ガス供給源、ノズル支持部３５０ｂ、ノズル部３４０ｂ、遮断弁１０１ｂを第２処理ガス供給系に含めて考え、第２処理ガス供給系は、ガス供給管３１０ｂ、ＭＦＣ３２０ｂ、バルブ３３０ｂにより構成される第２配管部と、少なくとも第２遮断部１０１ｂを含む第２境界部と、ノズル支持部３５０ｂとノズル部３４０ｂで少なくとも構成される第２ノズルとを含む構成としても良い。但し、ノズル部３４０ｂは先端が開放されたショートノズルであるため、ノズル支持部３５０ｂとノズル部３４０ｂが一体となった形状が好ましい。例えば、本実施形態において、第２処理ガス供給系は第２処理ガスとして原料ガスが供給されるよう構成されている。
主に、ガス供給管３１０ｃ、ＭＦＣ３２０ｃ、バルブ３３０ｃにより第３処理ガス供給系が構成される。また、第３処理ガス供給源、ノズル支持部３５０ｃ、ノズル部３４０ｃ、遮断弁１０１ｃを第３処理ガス供給系に含めて考え、第３処理ガス供給系は、ガス供給管３１０ｃ、ＭＦＣ３２０ｃ、バルブ３３０ｃにより構成される第３配管部と、少なくとも第３遮断部１０１ｃを含む第３境界部と、ノズル支持部３５０ｃとノズル部３４０ｃで少なくとも構成される第３ノズルとを含む構成としても良い。例えば、本実施形態において、第３処理ガス供給系は第３処理ガスとして反応ガス若しくは基板処理に寄与しない不活性ガスが供給されるよう構成されている。尚、これら処理ガス供給系の構成、及び遮断弁１０１の詳細は後述する。
なお、本明細書において、処理ガスという言葉を用いた場合は、第１処理ガスのみを含む場合、第２処理ガスのみを含む場合、第３処理ガスのみを含む場合、もしくはそれら全てを含む場合がある。また、処理ガス供給系という言葉を用いた場合は、第１処理ガス供給系のみを含む場合、第２処理ガス供給系のみを含む場合、第３処理ガス供給系のみを含む場合、もしくはそれら全てを含む場合がある。
ガス排気エリア２２４の下部には排気口２３０が設けられている。排気口２３０は排気管２３２に接続されている。排気管２３２には処理室２０１内の圧力を検出する圧力検出器（圧力検出部）としての圧力センサ２４５および圧力調整器（圧力調整部）としてのＡＰＣ（Ａｕｔｏ ＰｒｅｓｓｕｒｅＣｏｎｔｒｏｌｌｅｒ）バルブ２４４を介して真空排気装置としての真空ポンプ２４６が接続されており、処理室２０１内の圧力が所定の圧力（真空度）となるよう排気するように構成されている。なお、ＡＰＣバルブ２４４は、弁を開閉して処理室２０１内の真空排気・真空排気停止ができ、更に弁開度を調節してコンダクタンスを調整して処理室２０１内の圧力調整をできるようになっている開閉弁である。主に、排気管２３２、ＡＰＣバルブ２４４、圧力センサ２４５により排気系が構成される。なお、真空ポンプ２４６も排気系に含めてもよい。
このように、後述するコントローラ２８０は、後述するプロセスレシピを実行して、上述のように(Ａ)搬送系(ボートエレベータ１１５、ボート回転機構２６７等)、(Ｂ)温度制御系(ヒータ２０７等)、(Ｃ)処理ガス供給系(遮断部１０１、ＭＦＣ３２０、バルブ３３０等)、(Ｄ)ガス排気系(ＡＰＣバルブ２４４、圧力センサ２４５等)を制御するように構成されている。
また、図２に示すように、反応管２０３の外側に温度検出器としての温度センサ１(以後、熱電対ともいう)が設置されている。温度センサ１により検出された温度情報に基づきヒータ２０７への供給電力が調整され、処理室２０１の温度が所望の温度分布となるように構成されている。
また、図２に示すように熱電対１が、反応管２０３の外側に保護部材としてのカバー２より取り付けられている。カバー２は、石英部材で構成されている。本実施形態において、熱電対１が、処理室２０１の外側に取り付けられ、加熱部としてのヒータ２０７と対向するよう設けられる。例えば、熱電対１は、反応管２０３とカバー２により固定されている。
図２では、熱電対１が１本しか図示されていないが、熱電対１は複数本設けてもよい。また、熱電対１と反応管２０３の間に緩衝部材を設けることが可能である。更に、図２の熱電対１は反応管の側壁に設けられているが、熱電対１は反応管２０３の天井部に設けてもよい。
次に、図５及び図６は、本実施形態における処理ガス供給系を説明するための模式図である。この図５及び図６は、ガス供給管３１０と境界部(遮断弁１０１)とノズルとの間の関係の説明をより分かり易くするため、図１における処理ガス供給系を２系統にして表したものである。そして、コントローラ２８０は、後述するプロセスレシピを実行して、(Ｃ)処理ガス供給系(遮断部１０１、排気部１０２、切替部１０３等)を制御するように構成されている。また、この切替部(切替弁)の上流側は、処理ガス供給源、ＭＦＣ３２０、バルブ３３０等を含む処理ガス供給系が設けられているが、図５及び図６には省略されている。
尚、ガスボックス内で最も炉口部に近いバルブ(切替弁)は、基板処理に寄与するガスとクリーニングガスとを切り替えるバルブである。この切替部(切替弁)の上流側は、図示しない処理ガス供給系及び図示しないクリーニングガス供給系が設けられている。
本実施形態におけるガス供給システムは、炉口部２２６から反応管２０３内まで立上ったノズルと、少なくとも遮断部１０１を含む境界部と、基板処理に寄与するガスとクリーニングガスとを切り替える切替用のバルブ(切替弁)１０３で構成される切替部が設けられるガス供給管３１０と、を含み、更に、境界部は、ガス供給管３１０に接続され、切替部と遮断部１０１との間のガス供給管３１０を含む供給配管を排気する後述する排気部１０２を設けるのが好ましい。
好適には、炉口部２２６から反応管内まで立上ったノズル(第１ノズル及び第２ノズル)と、ノズル(第１ノズル)の上流側に設けられるガス供給管３１０ａを有する処理ガス供給系(第１ガス供給系)と、ノズル(第２ノズル)の上流側に設けられるガス供給管３１０ｂを有する処理ガス供給系(第２ガス供給系)と、第１ノズルと第１ガス供給系の境界に設けられるよう構成されている遮断部１０１ａ(第１遮断部)と、第２ノズルと第２ガス供給系の境界に設けられるよう構成されている１０１ｂ(第２遮断部)と、第１遮断部を第１ガス供給系と連動させて反応管内に第１のガスとして反応ガスを供給し、及び第２遮断部を第２ガス供給系と連動させて反応管内に第２のガスとして原料ガスを供給するよう構成されている。これら第１ガス供給系、第１遮断部、第２ガス供給系、第２遮断部は、図５及び図６でコントローラ２８０により制御するよう構成されている。
このような構成であるので、遮断弁１０１(境界部)を設け、遮断弁１０１ａは開、遮断弁１０１ｂは閉とすることで、ガス供給管３１０ａより第１ノズルを介して第１処理ガス供給時、ガス供給管３１０ｂと反応管２０３内を遮断し、第１処理ガスのガス供給管３１０ｂへの逆拡散を抑制することができる一方、遮断弁１０１ｂは開、遮断弁１０１ａは閉とすることで、ガス供給管３１０ｂより第２ノズルを介して第２処理ガス供給時、ガス供給管３１０ａと反応管２０３内を遮断し、第１処理ガスのガス供給管３１０ａへの逆拡散を抑制することができる。
特に、本実施形態のように第２処理ガスとして原料ガスを使用する場合、遮断弁１０１ｂを開放させて第２ノズルから原料ガスを反応管２０３内に供給している間、遮断弁１０１ａは閉とすることでガス供給管３１０ａと反応管２０３内を遮断し、原料ガスのガス供給管３１０ａへの逆拡散を完全に抑制することができるので、ガス供給配管３１０で発生する副生成物に起因するパーティクルを低減することができる。
また、図５に長鎖線で示されているように、この炉口部２２６を囲むように、炉口部２２６の局所排気を実施するための炉口ボックスを設けてもよい。炉口ボックスは、炉口部２２６のガスリーク及び熱こもり対策に利用される。炉口ボックス内は、５０℃～２００℃の高温雰囲気となる。一般的に、弁の耐熱温度が１５０℃程度のため、耐熱仕様の弁(耐熱温度２５０～３００℃)を用いることが考えられる。但し、耐熱仕様の弁の動作寿命が著しく低下し、交換頻度が短くなることが考えられる。この対策として、遮断部１０１への冷却機構を追加することで、弁の耐熱温度を超える場合においても炉口ボックス内へ弁を配置可能である。
また、冷却の方法としては、後述する図９に示すように、冷却水を用いた放熱方法(例えば、冷却ブロックで遮断弁１０１覆った形態)が考えられる。尚、弁の耐熱温度以下にすることができればよいため、その冷却方法は何でも構わない。
更に、反応管２０３内のガスを排出する排気系を備え、制御部２８０は、反応管２０３内の基板に対する反応ガス又は原料ガスの供給が終了すると、第１遮断部及び第２遮断部を閉塞させて、反応管２０３内から未反応の原料ガス又は反応ガスを排出するよう排気系を制御するよう構成されている。反対に、制御部２８０は、第１遮断部及び第２遮断部を開放させた状態で、反応管２０３内に供給する不活性ガスの流量を変化させてサイクルパージするよう、第１ガス供給系、第１遮断部、第２ガス供給系、第２遮断部、排気系を制御するよう構成されている。
また、図５に示すように、切替部と境界部との間のガス供給管３１０は、形状を曲げることが可能なフレキシブル配管を含む構成となっている。ここで、フレキシブル配管は、ガス供給管３１０に設けられ、例えば、蛇腹状であってもよい。そして、遮断部１０１は、炉口部２２６の側壁に一体型(若しくは直結)にて設置されている。
また、図５では炉口ボックス内にフレキシブル配管が設けられている。但し、フレキシブル配管は、この形態によらず、切替部が設けられるガスボックスと遮断部１０１が設けられる炉口ボックスの間の配管に設けられる。ガスボックスと炉口ボックスとの間の配管の引き回しでは、現地(例えば、半導体工場)にて接続されるため、装置レイアウト、工場内の設備、装置の設置環境等により大きく左右され、配管(例えば、金属製)と配管(例えば、金属製)との間を調整する必要がある。この調整は、金属製の配管では不可能であり、配管形状を変形することが可能なフレキシブル配管が必須である。
従来、図４に示すように炉口部２２６と切替部との間に設置された配管は、フレキシブル配管を含む構成であったが、本実施形態において、炉口部２２６と遮断部１０１との間に設置された配管は、フレキシブル配管を含まない。尚、図６でも遮断部１０１の上流側にガス供給管３１０が設けられているが、ガス供給管３１０内に設けられているフレキシブル配管は省略されている。
図６は、図５に示すガス供給システムの遮断部１０１に隣接するように排気部１０２を更に設けた構成を示す模式図である。言い換えると、排気部１０２を除く構成は、図５と同じ構成であるため、排気部１０２について説明する。図６では、遮断部１０１の上流側で供給配管を分岐する排気部１０２が設置され、該排気部１０２により排気管２３２へベント配管が接続されるように構成されている。このような構成であるため、反応管２０３を介することなく、切替部から遮断部１０１間のフレキシブル配管を含むガス供給管３１０をサイクルパージすることができる。
例えば、後述する成膜シーケンス内において、ガス供給管３１０ｂより、反応管２０３内に原料ガスを供給している際にガス供給管３１０ａをサイクルパージ可能とし、よりガス供給管３１０ａ内の清浄度を向上させることができる。また、後述する成膜シーケンス終了後の基板搬送工程において反応管２０３内が大気圧開放状態になっても、ガス供給管３１０内を個別にサイクルパージすることができ、よりガス供給管３１０内の清浄度を向上させることができる。
また、装置構成上マニホールド２２６部周辺の空間が小さく、遮断部１０１及び排気部１０２の設置が困難であるが、境界部と炉口部２２６を一体型とすることで、省スペースでの配置を実現でき、且つ、メンテナンス性の向上を達成できる。
次に、図７～図１０を主に用いて、炉口部２２６の外側に近接して設けられる遮断弁１０１の構成について詳述する。
本実施の形態における炉口部２２６と遮断部１０１との間の構成は、図７のように炉口部２２６と遮断弁１０１が直結した構成(外観で配管が含まれることが分かる構成)であるか、図８のように炉口部２２６と遮断弁１０１ａ(１０１ｂ)が一体型の構成(外観では配管を設けていない構成)であるか、どちらでも構わない。また、図７及び図８は、遮断部１０１が付加された炉口部２２６を示す図でもある。
図示されていないが、排気部１０２が遮断部１０１に隣接された状態で炉口部２２６に一体的に構成することができる。また、図９に示すように、遮断部１０１が冷却機構付で構成されていても構わない。
また、図４の炉口部２２６と切替部との間に設置された配管の長さ(配管長)と、本実施の形態における炉口部２２６と遮断部１０１との間に設置された配管の長さ(配管長)を比較する。図７の実施例の配管長を１００ｍｍと仮定して、その配管長の長さ比が１/５～１/３０程度、更に、図８の実施例においては、図示されていないが接続部を配管に含めると大凡５０ｍｍと仮定され、その配管長の長さ比が１/１０～１/６０程度である。また、理想の配管長はゼロ(配管を設けない構成)である。
図８において炉口部２２６に遮断部１０１が一体的に取り付けられた構成、つまり、炉口部２２６の側壁に配管を設けないように取り付けられている遮断部１０１の詳細を図１０に示す。尚、図１０において遮断部１０１が、図示していないが同様の構成で複数炉口部２２６に設けられる。
遮断部１０１は、一端では炉口部２２６の内側に配置されるノズル(又は、ノズル支持部３５０)と接続され、他端では炉口部２２６の外側で配管(本実施形態ではガス供給管と接続される。図１０は、遮断部１０１が開の状態のときの図である。図１０に、ガスの流路がガス供給管３１０から遮断部１０１内を介してノズル部３４０まで連通するように構成されている。
また、ガス供給管３１０への処理ガスの逆拡散の影響を最低限にするには、ノズル支持部３５０と遮断部１０１の間に配管を設けないのが理想だが、遮断部１０１の構成上無理であるため、図１０のように遮断部１０１と炉口部２２６との間を一体構造にするのが好ましい。
図３に示すように、制御部（制御手段）であるコントローラ２８０は、ＣＰＵ（Ｃｅｎｔｒａｌ Ｐｒｏｃｅｓｓｉｎｇ Ｕｎｉｔ）１２１ａ、ＲＡＭ（Ｒａｎｄｏｍ Ａｃｃｅｓｓ Ｍｅｍｏｒｙ）１２１ｂ、記憶装置１２１ｃ、Ｉ／Ｏポート１２１ｄを備えたコンピュータとして構成されている。ＲＡＭ１２１ｂ、記憶装置１２１ｃ、Ｉ／Ｏポート１２１ｄは、内部バス１２１ｅを介して、ＣＰＵ１２１ａとデータ交換可能なように構成されている。コントローラ２８０には、例えばタッチパネル等として構成された入出力装置１２２が接続されている。
記憶装置１２１ｃは、例えばフラッシュメモリ、ＨＤＤ（Ｈａｒｄ Ｄｉｓｋ Ｄｒｉｖｅ）等で構成されている。記憶装置１２１ｃ内には、基板処理装置の動作を制御する制御プログラムや、基板処理の手順や条件等が記載されたプロセスレシピとしての後述する成膜シーケンス等が、読み出し可能に格納されている。プロセスレシピは、後述する基板処理工程における各手順をコントローラ２８０に実行させ、所定の結果を得ることが出来るように組み合わされたものであり、プログラムとして機能する。以下、このプロセスレシピや制御プログラム等を総称して、単に、プログラムともいう。本明細書においてプログラムという言葉を用いた場合は、プロセスレシピ単体のみを含む場合、制御プログラム単体のみを含む場合、または、その両方を含む場合がある。ＲＡＭ１２１ｂは、ＣＰＵ１２１ａによって読み出されたプログラムやデータ等が一時的に保持されるメモリ領域（ワークエリア）として構成されている。
Ｉ／Ｏポート１２１ｄは、上述のＭＦＣ３２０ａ～３２０ｆ、バルブ３３０ａ～３３０ｆ、遮断弁１０１ａ～１０１ｃ、排気弁１０２ａ～１０２ｃ、圧力センサ２４５、ＡＰＣバルブ２４４、真空ポンプ２４６、ヒータ２０７、温度センサ(熱電対)１、ボート回転機構２６７、ボートエレベータ１１５等に接続されている。
ＣＰＵ１２１ａは、記憶装置１２１ｃから制御プログラムを読み出して実行すると共に、入出力装置１２２からの操作コマンドの入力等に応じて記憶装置１２１ｃからプロセスレシピを読み出すように構成されている。ＣＰＵ１２１ａは、読み出した制御プログラムやプロセスレシピの内容に沿うように、ＭＦＣ３２０ａ～３２０ｆによる各種ガスの流量調整動作、バルブ３３０ａ～３３０ｆの開閉動作、遮断弁１０１ａ～１０１ｃの開閉動作、ＡＰＣバルブ２４４の開閉動作および圧力センサ２４５に基づくＡＰＣバルブ２４４による圧力調整動作、真空ポンプ２４６の起動および停止、温度センサ１に基づくヒータ２０７の温度調整動作、ボート回転機構２６７によるボート２１７の回転および回転速度調節動作、ボートエレベータ１１５によるボート２１７の昇降動作等を制御するように構成されている。
コントローラ２８０は、外部記憶装置（例えば、磁気テープ、フレキシブルディスクやハードディスク等の磁気ディスク、ＣＤやＤＶＤ等の光ディスク、ＭＯ等の光磁気ディスク、ＵＳＢメモリやメモリカード等の半導体メモリ）１２３に格納された上述のプログラムを、実行することができる。一方、記憶装置１２１ｃや外部記憶装置１２３は、コンピュータ読み取り可能な記録媒体として構成することができる。以下、これらを総称して、単に、記録媒体ともいう。本明細書において記録媒体という言葉を用いた場合は、記憶装置１２１ｃ単体のみを含む場合、外部記憶装置１２３単体のみを含む場合、または、その両方を含む場合がある。なお、コントローラ２８０へのプログラムの提供は、外部記憶装置１２３を用いず、インターネットや専用回線等の通信手段を用いて行ってもよい。
次に、本発明に関わる基板処理装置の動作概要について説明する。なお、基板処理装置は、コントローラ２８０により制御されるものである。
所定枚数のウエハ２００が載置されたボート２１７が反応管２０３内に挿入され、シールキャップ２１９により、反応管２０３が気密に閉塞される。気密に閉塞された反応管２０３内では、ウエハ２００が加熱されて所定の温度に維持されると共に、処理ガスが反応管２０３内に供給され、ウエハ２００に加熱等の熱処理がなされる。
熱処理として、例えば、本実施形態における成膜処理では、プロセスレシピとして図１１に示す成膜シーケンスを、処理室２０１内のウエハ２００に対してＨＣＤＳガスを供給する工程と、処理室２０１内からＨＣＤＳガス（残留ガス）を除去する工程と、処理室２０１内のウエハ２００に対してＮＨ３ガスを供給する工程と、処理室２０１内からＮＨ３ガス（残留ガス）を除去する工程と、を非同時に行うサイクルを所定回数（１回以上）行うことで、ウエハ２００上にＳｉＮ膜を形成する。
また、本明細書において「基板」という言葉を用いた場合、「ウエハ」という言葉を用いた場合と同義である。
（ウエハチャージおよびボートロード）
複数枚のウエハ２００がボート２１７に装填（ウエハチャージ）されると、ボート２１７は、ボートエレベータによって処理室２０１内に搬入（ボートロード）される。このとき、シールキャップ２１９は、Ｏリングを介して反応管２０３の下端を気密に閉塞（シール）した状態となる。
（圧力調整および温度調整）
処理室２０１内、すなわち、ウエハ２００が存在する空間が所定の圧力（真空度）となるように、真空ポンプ２４６によって真空に排気される。この際、処理室２０１内の圧力は、圧力センサ２４５で測定され、この測定された圧力情報に基づきＡＰＣバルブ２４４が、フィードバック制御される。真空ポンプ２４６は、少なくともウエハ２００に対する処理が終了するまでの間は常時作動させた状態を維持する。
また、処理室２０１内のウエハ２００が所定の温度となるように、ヒータ２０７によって加熱される。この際、処理室２０１が所定の温度分布となるように、温度センサが検出した温度情報に基づきヒータ２０７への通電具合がフィードバック制御される。ヒータ２０７による処理室２０１内の加熱は、少なくともウエハ２００に対する処理が終了するまでの間は継続して行われる。
また、回転機構２６７によるボート２１７およびウエハ２００の回転を開始する。回転機構２６７により、ボート２１７が回転されることで、ウエハ２００が回転される。回転機構２６７によるボート２１７およびウエハ２００の回転は、少なくとも、ウエハ２００に対する処理が終了するまでの間は継続して行われる。
（成膜処理）
処理室２０１の温度が予め設定された処理温度に安定すると、以下、次の２つのステップ、すなわち、ステップ１～２を順次実行する。
　［ステップ１］
このステップでは、処理室２０１内のウエハ２００に対し、原料ガス(ＨＣＤＳガス)を供給する。このステップ１は、プリパージ工程と、原料ガス供給工程と、原料ガス排気工程と、パージ工程と、を少なくとも含む。以下、それぞれの工程について説明する。
　(プリパージ工程)
先ず、バルブ３３０ｂ、３３０ｅを開き、ガス供給管３１０ｂ内へＨＣＤＳガスを流す。但し、この工程では、遮断弁１０１ｂを閉じ、処理室２０１へは供給しない。このとき、同時にバルブ３３０ｄおよび３３０ｆを開き、ガス供給管３１０ａおよび３１０ｃ内へＮ２ガスを流す。更に、遮断弁１０１ａおよび１０１ｃを開き、Ｎ２ガスを、ＭＦＣにより流量調整された所定の流量で処理室２０１内へ供給し、排気管２３２から排気してもよい。ここで、排気弁１０２ｂを遮断弁１０１ｂに隣接して設け、排気弁１０２ｂを開き、ＨＣＤＳガスを、ガス供給管３１０ｂから排気弁１０２ｂを介して排気管２３２へ排気することができるよう構成するのが好ましい。
　(原料ガス供給工程)
引き続きバルブ３３０ｂ、３３０ｅを開いた状態で、遮断弁１０１ｂを開き、処理室２０１内へＨＣＤＳガスを流す。このとき、ＨＣＤＳガスは、ＭＦＣにより流量調整され、ノズル部３４０ｂを介して処理室２０１内へ供給され、排気管２３２から排気される。一方、遮断弁１０１ａ、遮断弁１０１ｃは閉じられる。これにより、ガス供給管３１０ａ、３１０ｃにＨＣＤＳガスが逆拡散することを抑制できる。
　(原料ガス排気工程)
次に、引き続き遮断弁１０１ａ及び１０１ｃを閉じた状態で遮断弁１０１ｂを閉じる。このとき、ＡＰＣバルブ２４４は開いたままとして、真空ポンプ２４６により処理室２０１内を真空排気し、処理室２０１内に残留する未反応もしくは第１の層としてのシリコン（Ｓｉ）含有層の形成に寄与した後のＨＣＤＳガスを処理室２０１内から排出する。
そして、この原料ガス供給工程と原料ガス排気工程を順次(本実施例では３回)実行させる。このとき、ウエハ２００の最表面上に、第１の層が形成される。尚、原料供給工程と原料排気工程を一サイクルとして複数サイクル実行するのが好ましい。本実施例では、ＨＣＤＳガスを処理室２０１内に供給するノズルの先端が開放された短管ノズルで構成されており、ガス濃度分布の均一化を図るため、このようなサイクリックな供給(サイクルフロー)としている。但し、ガスの供給の仕方はノズル形状に応じて適宜設定される。
　(アフターパージ工程)
第１の層が形成された後、バルブ３３０ｂを閉じ、ＨＣＤＳガスの供給を停止する。このとき、バルブ３３０ｄ～３３０ｆ、及び遮断弁１０１ａ～１０１ｃを開き、Ｎ２ガスの処理室２０１内への供給を再開する。Ｎ２ガスはパージガスとして作用し、これにより、処理室２０１内に残留するガスを処理室２０１内から排出する効果を高めることができる。
　(ガスパージ工程)
アフターパージ工程より引き続き、バルブ３３０ｄ～３３０ｆ及び遮断弁１０１ａ～１０１ｃを開いたまま、Ｎ２ガスの処理室２０１内への供給を継続し、所定周期でガス流量を異ならせる。例えば、流量Ａと流量Ｂ(流量Ａ＞流量Ｂ)の切替を、予め決められた回数行う。本実施形態では２回行うように制御される。
本実施形態では、反応ガスを供給する前に、確実に処理室２０１内に残留するガスを処理室２０１内から排出するガスパージ工程をステップ１に含めるが、成膜シーケンスを図１３に示すようステップ１からステップ４に分割してもよい。図１３については後述する。
　［ステップ２］
ステップ１が終了した後、処理室２０１内のウエハ２００、すなわち、ウエハ２００上に形成された第１の層に対して反応ガスとしてＮＨ３ガスを供給する。ＮＨ３ガスは熱で活性化されてウエハ２００に対して供給されることとなる。
このステップでは、バルブ３３０ａ、３３０ｄ、１０１ａの開閉制御を、ステップ１におけるバルブ３３０ｂ、３３０ｅ、１０１ｂの開閉制御と同様の手順で行う。ＮＨ３ガスは、ＭＦＣにより流量調整され、ノズル部３４０ａを介して処理室２０１内へ供給され、排気管２３２から排気される。このとき、ウエハ２００に対してＮＨ３ガスが供給されることとなる。ウエハ２００に対して供給されたＮＨ３ガスは、ステップ１でウエハ２００上に形成された第１の層、すなわちＳｉ含有層の少なくとも一部と反応する。これにより第１の層は、ノンプラズマで熱的に窒化され、ＳｉおよびＮを含む第２の層、すなわち、シリコン窒化層（ＳｉＮ層）へと変化させられる（改質される）。なお、このとき、プラズマ励起させたＮＨ３ガスをウエハ２００に対して供給し、第１の層をプラズマ窒化することで、第１の層を第２の層（ＳｉＮ層）へ変化させるようにしてもよい。
第２の層が形成された後、バルブ３３０ａ、３３０ｄを閉じ、ＮＨ３ガスの供給を停止する。そして、ステップ１と同様の処理手順により、処理室２０１内に残留する未反応もしくは第２の層の形成に寄与した後のＮＨ３ガスや反応副生成物を処理室２０１内から排出する。
(ガスパージ工程)
反応ガスを供給後、確実に処理室２０１内に残留するガスを処理室２０１内から排出する工程をステップ２に含める場合がある。
手順はステップ１の時と同様に、バルブ３３０ｄ～３３０ｆ、及び遮断弁１０１ａ～１０１ｃを開き、Ｎ２ガスの処理室２０１内への供給を継続し、所定周期で流量を異ならせる。例えば、流量Ａと流量Ｂ(流量Ａ＞流量Ｂ)に切替を、予め決められた回数行う。本実施形態では４回行うよう制御される。
　(アフターパージ工程)
所定回数終了後、バルブ３３０ｄ～３３０ｆ、及び遮断弁１０１ａ～１０１ｃを開いた状態で、所定流量に調整したＮ２ガスを、所定時間処理室２０１内へ供給してパージ工程を終了する。これで成膜シーケンスを終了する。
（所定回数実施）
上述した２つのステップ(図１１に示す成膜シーケンス)を非同時に、すなわち、同期させることなく行うサイクルを所定回数（ｎ回）行うことにより、ウエハ２００上に、所定組成および所定膜厚のＳｉＮ膜を形成することができる。なお、上述のサイクルは複数回繰り返すのが好ましい。すなわち、上述のサイクルを１回行う際に形成される第２の層（ＳｉＮ層）の厚さを所定の膜厚よりも小さくし、第２の層（ＳｉＮ層）を積層することで形成されるＳｉＮ膜の膜厚が所定の膜厚になるまで、上述のサイクルを複数回繰り返すのが好ましい。
（パージおよび大気圧復帰）
成膜処理が完了した後、バルブ３１０ｅおよび３１０ｆを開き、ガス供給管３１０ｂおよび３１０ｃからＮ２ガスを処理室２０１内へ供給し、排気管２３２から排気する。これにより、処理室２０１内がパージされ、処理室２０１内に残留するガスや反応副生成物が処理室２０１内から除去される（パージ）。その後、処理室２０１内の雰囲気が不活性ガスに置換され（不活性ガス置換）、処理室２０１内の圧力が常圧に復帰される（大気圧復帰）。
（ボートアンロードおよびウエハディスチャージ）
ボートエレベータ１１５によりシールキャップ２１９が下降され、反応管２０３の下端が開口される。そして、処理済のウエハ２００が、ボート２１７に支持された状態で、反応管２０３の下端から反応管２０３の外部に搬出される（ボートアンロード）。処理済のウエハ２００は、ボート２１７より取出される（ウエハディスチャージ）。
本実施の形態によれば、ノズルとガス供給系の境界に設けられている遮断弁１０１を開閉させながらＨＣＤＳガスを反応管２０３内に供給することができるので、ＨＣＤＳガスを供給する処理ガス供給系以外の処理ガス供給系に接続される遮断弁１０１を閉じることにより、ＨＣＤＳガスが他の処理ガス供給系に拡散されることが無い。従い、ガス供給管３１０等の配管内の副生成物が起因とされるパーティクルが低減できる。
本実施の形態によれば、ＨＣＤＳガス以外の処理ガス供給系の遮断弁１０１を閉じることにより、ＨＣＤＳガスの逆拡散を抑制できるので、ＨＣＤＳガスを供給する処理ガス供給系を構成する配管を加熱する範囲を、大幅に縮小させることができる。
更に、ＨＣＤＳガスを供給する処理ガス供給系以外の処理ガス供給系も同様にＨＣＤＳガスが拡散される配管を加熱していたが、ガスによっては配管を加熱する必要が無く、また、配管加熱が必要なガスであっても適切な温度に加熱すればよく、これまでＨＣＤＳの液化防止のため高温加熱していた範囲を縮小することができ、ヒータコストの削減につながる。
図１２は、図１に示す処理ガス供給系(３系統)にて、成膜ガス供給系以外の２系統よりカウンターＮ２の流量を変化させたＮ２ガス流量依存性を示す図である。
このときの処理条件は、例えば下記のとおりである。
ウエハ２００の温度：１００～８００℃(好ましくは、４００～７５０℃、本実施形態では、６３０℃)
処理室内圧力：５～４０００Ｐａ(好ましくは、１０～１３３２Ｐａ)
ＨＣＤＳガス供給流量：１～２０００ｓｃｃｍ(好ましくは、５０～５００ｓｃｃｍ)
ＮＨ３ガス供給流量：１００～３００００ｓｃｃｍ
Ｎ２ガス供給流量：１～５００００ｓｃｃｍ
ＳｉＮ膜の膜厚：０．２～１００ｎｍ
図１２は、カウンターＮ２の有無及び流量に対して、基板処理領域のＴＯＰ、ＣＮＴ、ＢＴＭのそれぞれの位置に配置されたウエハ２００の膜厚平均値と面内均一性を比較した表であり、また、カウンターＮ２の有無及び流量によって面間平均値を比較した表である。
図１２に示すカウンターＮ２無しが、本実施の形態に相当する。つまり、本実施の形態によれば、ＨＣＤＳガスやＮＨ３ガスが供給されている間、これまでカウンターＮ２を処理室２０１内に供給していたガス供給系に設けられた遮断弁１０１を閉としておくことにより、ガス供給管３１０側にこれらＨＣＤＳガスやＮＨ３ガスが逆拡散を防止することができるため、カウンターＮ２の必要が無い。
また、カウンターＮ２が無い場合に、基板処理領域のＴＯＰ、ＣＮＴ、ＢＴＭのそれぞれの位置に配置されたウエハ２００の膜厚平均値が一番高くなっている。これは、カウンターＮ２により希釈されなくて済むので処理室内２０１内のＨＣＤＳガスやＮＨ３ガスの濃度が高くなっているためである。
また、カウンターＮ２が無い場合に、基板処理領域のＴＯＰ、ＣＮＴ、ＢＴＭのそれぞれの位置に配置されたウエハ２００の面内均一性が一番低い値となっている。これは、カウンターＮ２の影響をうけることなく、処理室内２０１内のＨＣＤＳガスやＮＨ３ガスがウエハ２００表面に均等(若しくは全面)に接触することができるためである。
ここで、ＴＯＰは、基板処理領域に配置されたウエハ２００のうち最上部に配置されたウエハ２００であり、ＢＴＭは、基板処理領域に配置されたウエハ２００のうち最下部に配置されたウエハ２００であり、ＣＮＴは、基板処理領域に配置されたウエハ２００のうち中心部に配置されたウエハ２００である。例えば、ミニバッチ炉(全３３Ｓｌｏｔ)において、Ｓｌｏｔ１～Ｓｌｏｔ４及びＳｌｏｔ３０～３３にダミーウエハ(サイドダミーウエハ)が配置されると、ＴＯＰ:２９Ｓｌｏｔ、ＣＮＴ:１７Ｓｌｏｔ、ＢＴＭ:５Ｓｌｏｔとなる。
また、面内均一性は、ウエハ２００面内の所定箇所の膜厚を計測して平均している。そして、面間均一性は、この面内均一性を更にＴＯＰ～ＢＴＭまでのＳｌｏｔに載置されたウエハ２００の枚数分の平均値を求めることで算出している。上記ミニバッチ炉によれば、２５Ｓｌｏｔ分の面内平均値より面間平均値を算出することになる。
本実施例によれば、カウンターＮ２の供給を無くすことにより、面内均一性及び面間均一性のいずれにおいても改善することができた。特に、面間均一性は、格段に向上することが分かった。
次に、図１３に遮断弁が無い現行の成膜シーケンスと遮断弁を有する実施形態における成膜シーケンスとの比較を示す。明らかに処理ガス供給後のパージ工程(ガス置換工程)において、反応管内のガス置換に要する時間が大幅に向上されている。
図４に示すように炉口部２２６に一番直近の開閉弁まで配管があり、従来のパージ工程ではこの開閉弁までの配管を排気するようになっていた。よって、この配管まで真空ポンプ２４６で排気していたため、排気効率が悪くなっており、ガス置換工程に時間を費やす必要があった。一方、本実施形態によれば、遮断部１０１を閉塞することにより、ノズル部３４０まで真空ポンプ２４６で排気するため、現行のシーケンスと比較して格段と排気効率が向上している。特に、図１３に示すように処理ガス供給後のサイクルパージ工程の時間を大幅に短縮することができる。
例えば、図１３に示すシーケンス比較では、現行の成膜シーケンスの一サイクルにかかる時間が５１ｓｅｃに対して、遮断弁１０１を有する本実施形態における成膜シーケンスの一サイクルにかかる時間が４１ｓｅｃとなっており、一つのサイクルで約２０％(１０ｓｅｃ)短縮することができる。
このように本実施の形態によれば、処理ガス供給後のパージ工程において、遮断弁を閉じることにより反応管内のガス置換効率を大幅に向上させることができる。従い、成膜シーケンスにおけるパージ工程に係る時間を短縮することができる。更に、成膜シーケンスの短縮によりスループット向上が期待できる。
また、本実施の形態によれば、以下に示す一つ又は複数の効果が得られる。
　(ａ)本実施の形態によれば、マニホールドの外側に遮断弁を設けることで一体化することにより、遮断弁よりも供給ガス配管上流側へのガス逆拡散を抑制できる。
(ｂ)本実施の形態によれば、遮断弁が炉口部の側壁に近接して設けられるよう構成されているので、他のガス供給管から反応管内に処理ガスが供給されている間、遮断弁を閉塞することによりガス供給管内へ処理ガスの逆拡散を抑制することができる。
(ｃ)本実施の形態によれば、ガス供給管上流側への処理ガスの逆拡散を抑制することにより、例えば、塩化アンモニウム等の副生成物が配管内部に付着することを抑制し、それらに起因するパーティクルを低減できる。
(ｄ)本実施の形態によれば、ガス供給管内への処理ガスの逆拡散を抑制できるので、他のガス供給管から反応管内に成膜ガスが供給される際に、逆拡散を抑制するための不活性ガス(本実施形態におけるカウンターＮ２ガス)を反応管内に供給する必要が無く、不活性ガスの無駄な浪費を抑えられる。
(ｅ)本実施の形態によれば、反応室と各ガス供給管の雰囲気を遮断することにより、配管加熱範囲縮小と各々の配管加熱温度の適正化ができる。
(ｆ)本実施の形態によれば、遮断弁を設けているので、あるガス供給管から供給される気化ガスによる他のガス供給管内への逆拡散を抑制することができる。よって、他のガス供給管に供給されるガスによるものの他のガス供給管自体は加熱の必要が無い場合は、配管の加熱範囲を縮小することができる。
(ｇ)本実施の形態によれば、ガス供給管自体も加熱の必要がある場合、ガス供給管ほど高温で温度均一性の要求値が高くない場合であっても、ガス供給管の温度に設定する必要があったが、遮断弁を追加することにより、ガス供給管ほど高温で温度均一性を良くする必要が無く、安価な比較的低温なヒータや、断熱構造も簡単なヒータを選定することができる。
　(ｈ)本実施の形態によれば、カウンターＮ２の代わりに遮断弁を閉じることにより、結果として膜厚均一性を向上することが出来る。
　(ｉ) 本実施の形態によれば、遮断弁を閉じ、供給ガス配管上流側へのガス逆拡散を抑制することにより、処理室内のガス置換効率を向上し、成膜シーケンス時間を短縮できる。
本実施形態では、基板処理装置の一種である縦型の半導体製造装置に関して詳述したが、これに限定されることは無く、例えば、横型の半導体製造装置についても本発明は適用できる。
　例えば、上述の実施形態では、原料ガスとしてＨＣＤＳガスを用いる例について説明した。しかしながら、本発明は、このような態様に限定されない。例えば、原料ガスとしては、ＨＣＤＳガスの他、モノクロロシラン（ＳｉＨ３Ｃｌ、略称：ＭＣＳ）ガス、ジクロロシラン（ＳｉＨ２Ｃｌ２、略称：ＤＣＳ）ガス、トリクロロシラン（ＳｉＨＣｌ３、略称：ＴＣＳ）ガス、テトラクロロシランすなわちシリコンテトラクロライド（ＳｉＣｌ４、略称：ＳＴＣ）ガス、オクタクロロトリシラン（Ｓｉ３Ｃｌ８、略称：ＯＣＴＳ）ガス等の無機系ハロシラン原料ガスや、トリスジメチルアミノシラン（Ｓｉ［Ｎ（ＣＨ３）２］３Ｈ、略称：３ＤＭＡＳ）ガス、テトラキスジメチルアミノシラン（Ｓｉ［Ｎ（ＣＨ３）２］４、略称：４ＤＭＡＳ）ガス、ビスジエチルアミノシラン（Ｓｉ［Ｎ（Ｃ２Ｈ５）２］２Ｈ２、略称：ＢＤＥＡＳ）ガス、ビスターシャリブチルアミノシラン（ＳｉＨ２［ＮＨ（Ｃ４Ｈ９）］２、略称：ＢＴＢＡＳ）ガス等のハロゲン基非含有のアミノ系（アミン系）シラン原料ガスを用いることができる。また、原料ガスとしては、モノシラン（ＳｉＨ４、略称：ＭＳ）ガス、ジシラン（Ｓｉ２Ｈ６、略称：ＤＳ）ガス、トリシラン（Ｓｉ３Ｈ８、略称：ＴＳ）ガス等のハロゲン基非含有の無機系シラン原料ガスを用いることができる。
　また、例えば、上述の実施形態では、反応ガスとしてＮＨ３ガスを用いる例について説明した。しかしながら、本発明は、このような態様に限定されない。例えば、反応ガスとしては、ＮＨ３ガスの他、ジアゼン（Ｎ２Ｈ２）ガス、ヒドラジン（Ｎ２Ｈ４）ガス、Ｎ３Ｈ８ガス等の窒化水素系ガスや、これらの化合物を含むガス等を用いることができる。また、反応ガスとしては、トリエチルアミン（（Ｃ２Ｈ５）３Ｎ、略称：ＴＥＡ）ガス、ジエチルアミン（（Ｃ２Ｈ５）２ＮＨ、略称：ＤＥＡ）ガス、モノエチルアミン（Ｃ２Ｈ５ＮＨ２、略称：ＭＥＡ）ガス等のエチルアミン系ガスや、トリメチルアミン（（ＣＨ３）３Ｎ、略称：ＴＭＡ）ガス、ジメチルアミン（（ＣＨ３）２ＮＨ、略称：ＤＭＡ）ガス、モノメチルアミン（ＣＨ３ＮＨ２、略称：ＭＭＡ）ガス等のメチルアミン系ガス等を用いることができる。また、反応ガスとしては、トリメチルヒドラジン（（ＣＨ３）２Ｎ２（ＣＨ３）Ｈ、略称：ＴＭＨ）ガス等の有機ヒドラジン系ガス等を用いることができる。
　また、例えば、上述の実施形態では、原料ガスとしてＨＣＤＳガスを用い、反応ガスとしてＮＨ３ガスのような窒素（Ｎ）含有ガス（窒化ガス）を用い、ＳｉＮ膜を形成する例について説明した。しかしながら、本発明は、このような態様に限定されない。例えば、これらの他、もしくは、これらに加え、酸素（Ｏ２）ガス等の酸素（Ｏ）含有ガス（酸化ガス）、プロピレン（Ｃ３Ｈ６）ガス等の炭素（Ｃ）含有ガス、三塩化硼素（ＢＣｌ３）ガス等の硼素（Ｂ）含有ガス等を用い、ＳｉＯ膜、ＳｉＯＮ膜、ＳｉＯＣＮ膜、ＳｉＯＣ膜、ＳｉＣＮ膜、ＳｉＢＮ膜、ＳｉＢＣＮ膜等を形成することができる。なお、各ガスを流す順番は適宜変更することができる。これらの成膜を行う場合においても、上述の実施形態と同様な処理条件にて成膜を行うことができ、上述の実施形態と同様の効果が得られる。
　なお、各ガスを流す順番は適宜変更することができる。これらの成膜を行う場合においても、上述の実施形態と同様な処理条件にて成膜を行うことができ、上述の実施形態と同様の効果が得られる。すなわち、本発明は、半導体元素や金属元素等の所定元素を含む膜を形成する場合に好適に適用することができる。
　また、上述の実施形態では、基板上に膜を堆積させる例について説明した。しかしながら、本発明は、このような態様に限定されない。例えば、基板や基板上に形成された膜等に対して、酸化処理、拡散処理、アニール処理、エッチング処理等の処理を行う場合にも、好適に適用可能である。また、上述の実施形態や変形例は、適宜組み合わせて用いることができる。このときの処理条件は、例えば上述の実施形態や変形例と同様な処理条件とすることができる。
　以上、本発明の実施の形態を具体的に説明したが、本発明は上述の実施形態に限定されるものではなく、その要旨を逸脱しない範囲で種々変更可能である。
　本発明は、基板上に膜を形成させる基板処理装置に適用可能である。
１０１   遮断弁(遮断部)
１０２   排気弁(排気部)
２００   ウエハ(基板)
２０３   反応管
２２６   マニホールド(炉口部)
３１０   ガス供給管
３４０   ノズル部
３５０   ノズル支持部
 

Claims (13)

  1. 反応管と該反応管の下部に設けられる炉口部で少なくとも構成される処理室と、前記炉口部に設けられ、前記炉口部から前記反応管内まで立上ったノズルと、前記ノズルの上流側に設けられるガス供給系と、前記ガス供給系と前記ノズルの境界に設けられるよう構成されている遮断部と、前記遮断部を前記ガス供給系と連動させて前記ノズルから前記処理室内にガスを供給するよう、前記ガス供給系及び前記遮断部をそれぞれ制御する制御部と、を備えた基板処理装置。
  2. 前記遮断部は、前記遮断部と前記炉口部の側壁との間に配管を設けないよう前記炉口部の側壁に近接して取付けられるよう構成されている請求項１記載の基板処理装置。
  3. 　更に、前記配管部は、前記遮断部より上流側に設けられるガス切替部を有し、
    前記ガス供給系は、前記ガス切替部と前記遮断部との間の配管内の排気を実施する排気部を備えた請求項１記載の基板処理装置。
  4. 　更に、前記遮断部の冷却を実施する冷却部を備え、
    　前記冷却部は、前記遮断部に冷却流体を供給するよう構成されている請求項１乃至請求項３のいずれか一つに記載の基板処理装置。
  5. 　更に、前記炉口部の局所排気を実施する炉口ボックス部を備え、
    　前記遮断部は、前記炉口ボックス部内に設けられるよう構成されている請求項１乃至請求項４のいずれか一つに記載の基板処理装置。
  6. 炉口部から反応管内まで立上った第１ノズル及び第２ノズルと、
    前記第１ノズルの上流側に設けられる第１ガス供給系と、
    前記第２ノズルの上流側に設けられる第２ガス供給系と、
    前記第１ノズルと前記第１ガス供給系の境界に設けられるよう構成されている第１遮断部と、
    前記第２ノズルと前記第２ガス供給系の境界に設けられるよう構成されている第２遮断部と、
    前記第１遮断部を前記第１ガス供給系と連動させて前記反応管内に第１のガスを供給し、及び前記第２遮断部を前記第２ガス供給系と連動させて前記反応管内に第２のガスを供給するよう、前記第１ガス供給系、前記第１遮断部、前記第２ガス供給系、前記第２遮断部を制御する制御部と、
    を備えた基板処理装置。
  7. 前記制御部は、前記第１遮断部を開放させて前記反応管内の基板に対して前記第１のガスを供給させつつ、前記第２のガスを供給しないよう前記第２遮断部を閉塞させる、および/または、前記第２遮断部を開放させて前記反応管内の基板に対して前記第２のガスを供給させつつ、前記第１のガスを供給しないよう前記第１遮断部を閉塞させる請求項６記載の基板処理装置。
  8. 　更に、前記反応管内のガスを排出する排気系を備え、
    　前記制御部は、前記反応管内の基板に対する前記第１のガス又は前記第２のガスの供給が終了すると、前記第１遮断部及び前記第２遮断部を閉塞させて、前記反応管内から前記第１のガス又は前記第２のガスを排出するよう前記排気系を制御する請求項６記載の基板処理装置。
  9. 　更に、前記反応管内のガスを排出する排気系を備え、
    前記制御部は、前記第１遮断部及び前記第２遮断部をそれぞれ開放させた状態で、前記反応管内をサイクルパージするよう、前記第１ガス供給系、前記第１遮断部、前記第２ガス供給系、前記第２遮断部、前記排気系を制御する請求項６記載の基板処理装置。
  10. 　前記制御部は、前記第１遮断部を前記第１ガス供給系と連動させると共に前記第２遮断部を前記第２ガス供給系と連動させて前記反応管内に不活性ガスを供給するよう、前記第１ガス供給系、前記第１遮断部、前記第２ガス供給系、前記第２遮断部を制御する請求項６記載の基板処理装置。
  11. 反応管の下部に設けられる炉口部であって、
    前記炉口部の内壁から前記反応管内まで立上ったノズルに接続される遮断部が、前記炉口部の外壁との間に配管を設けないよう取付けられるよう構成されている炉口部。
  12. 複数の基板を基板保持部材に載置した状態で前記基板保持部材を反応管内に搬入する工程と、
    炉口部の内壁から前記反応管内まで立上った第１ノズル及び第２ノズルにそれぞれ接続される第１遮断部及び第２遮断部を、前記第１ノズル及び前記第２ノズルの上流側にそれぞれ設けられる第１ガス供給系及び第１ガス供給系とそれぞれ連動させて、前記第１ノズルを介して前記反応管内に第１のガス、前記第２ノズルを介して前記反応管内に第２のガスをそれぞれ供給し、前記反応管内の前記基板を処理する工程と、を少なくとも有する半導体装置の製造方法。
  13. 複数の基板を基板保持部材に載置した状態で前記基板保持部材を反応管内に搬入する手順と、
    炉口部の内壁から前記反応管内まで立上った第１ノズル及び第２ノズルにそれぞれ接続される第１遮断部及び第２遮断部を、前記第１ノズル及び前記第２ノズルの上流側にそれぞれ設けられる第１ガス供給系及び第１ガス供給系とそれぞれ連動させて、前記第１ノズルを介して前記反応管内に第１のガス、及び前記第２ノズルを介して前記反応管内に第２のガスをそれぞれ供給し、前記反応管内の前記基板を処理する手順と、
    をコントローラに実行させて基板処理装置として機能させるプログラム。
     
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US20190106787A1 (en) 2019-04-11
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US20220275515A1 (en) 2022-09-01
US20200232097A1 (en) 2020-07-23
KR102326377B1 (ko) 2021-11-15
KR20210074422A (ko) 2021-06-21
KR20190002659A (ko) 2019-01-08
US11365482B2 (en) 2022-06-21
CN109075070A (zh) 2018-12-21

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