JPWO2017212546A1 - 基板処理装置、炉口部および半導体装置の製造方法並びにプログラム - Google Patents
基板処理装置、炉口部および半導体装置の製造方法並びにプログラム Download PDFInfo
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Abstract
Description
本発明の一実施形態における基板処理装置は、半導体装置の製造に使用される半導体製造装置の一例として構成されているものである。具体的には、反応管と該反応管の下部に設けられる炉口部で少なくとも構成される処理室と、炉口部に設けられ、炉口部から反応管内まで立上ったノズルと、ノズルの上流側に設けられる処理ガス供給系と、該処理ガス供給系とノズルの境界に設けられるよう構成されている遮断部と、遮断部を処理ガス供給系と連動させてノズルから処理室内にガスを供給するよう、処理ガス供給系及び遮断部をそれぞれ制御するコントローラと、を少なくとも有する構成である。
複数枚のウエハ200がボート217に装填(ウエハチャージ)されると、ボート217は、ボートエレベータによって処理室201内に搬入(ボートロード)される。このとき、シールキャップ219は、Oリングを介して反応管203の下端を気密に閉塞(シール)した状態となる。
処理室201内、すなわち、ウエハ200が存在する空間が所定の圧力(真空度)となるように、真空ポンプ246によって真空に排気される。この際、処理室201内の圧力は、圧力センサ245で測定され、この測定された圧力情報に基づきAPCバルブ244が、フィードバック制御される。真空ポンプ246は、少なくともウエハ200に対する処理が終了するまでの間は常時作動させた状態を維持する。
処理室201の温度が予め設定された処理温度に安定すると、以下、次の2つのステップ、すなわち、ステップ1〜2を順次実行する。
このステップでは、処理室201内のウエハ200に対し、原料ガス(HCDSガス)を供給する。このステップ1は、プリパージ工程と、原料ガス供給工程と、原料ガス排気工程と、パージ工程と、を少なくとも含む。以下、それぞれの工程について説明する。
先ず、バルブ330b、330eを開き、ガス供給管310b内へHCDSガスを流す。但し、この工程では、遮断弁101bを閉じ、処理室201へは供給しない。このとき、同時にバルブ330dおよび330fを開き、ガス供給管310aおよび310c内へN2ガスを流す。更に、遮断弁101aおよび101cを開き、N2ガスを、MFCにより流量調整された所定の流量で処理室201内へ供給し、排気管232から排気してもよい。ここで、排気弁102bを遮断弁101bに隣接して設け、排気弁102bを開き、HCDSガスを、ガス供給管310bから排気弁102bを介して排気管232へ排気することができるよう構成するのが好ましい。
引き続きバルブ330b、330eを開いた状態で、遮断弁101bを開き、処理室201内へHCDSガスを流す。このとき、HCDSガスは、MFCにより流量調整され、ノズル部340bを介して処理室201内へ供給され、排気管232から排気される。一方、遮断弁101a、遮断弁101cは閉じられる。これにより、ガス供給管310a、310cにHCDSガスが逆拡散することを抑制できる。
次に、引き続き遮断弁101a及び101cを閉じた状態で遮断弁101bを閉じる。このとき、APCバルブ244は開いたままとして、真空ポンプ246により処理室201内を真空排気し、処理室201内に残留する未反応もしくは第1の層としてのシリコン(Si)含有層の形成に寄与した後のHCDSガスを処理室201内から排出する。
第1の層が形成された後、バルブ330bを閉じ、HCDSガスの供給を停止する。このとき、バルブ330d〜330f、及び遮断弁101a〜101cを開き、N2ガスの処理室201内への供給を再開する。N2ガスはパージガスとして作用し、これにより、処理室201内に残留するガスを処理室201内から排出する効果を高めることができる。
アフターパージ工程より引き続き、バルブ330d〜330f及び遮断弁101a〜101cを開いたまま、N2ガスの処理室201内への供給を継続し、所定周期でガス流量を異ならせる。例えば、流量Aと流量B(流量A>流量B)の切替を、予め決められた回数行う。本実施形態では2回行うように制御される。
ステップ1が終了した後、処理室201内のウエハ200、すなわち、ウエハ200上に形成された第1の層に対して反応ガスとしてNH3ガスを供給する。NH3ガスは熱で活性化されてウエハ200に対して供給されることとなる。
反応ガスを供給後、確実に処理室201内に残留するガスを処理室201内から排出する工程をステップ2に含める場合がある。
所定回数終了後、バルブ330d〜330f、及び遮断弁101a〜101cを開いた状態で、所定流量に調整したN2ガスを、所定時間処理室201内へ供給してパージ工程を終了する。これで成膜シーケンスを終了する。
上述した2つのステップ(図11に示す成膜シーケンス)を非同時に、すなわち、同期させることなく行うサイクルを所定回数(n回)行うことにより、ウエハ200上に、所定組成および所定膜厚のSiN膜を形成することができる。なお、上述のサイクルは複数回繰り返すのが好ましい。すなわち、上述のサイクルを1回行う際に形成される第2の層(SiN層)の厚さを所定の膜厚よりも小さくし、第2の層(SiN層)を積層することで形成されるSiN膜の膜厚が所定の膜厚になるまで、上述のサイクルを複数回繰り返すのが好ましい。
成膜処理が完了した後、バルブ310eおよび310fを開き、ガス供給管310bおよび310cからN2ガスを処理室201内へ供給し、排気管232から排気する。これにより、処理室201内がパージされ、処理室201内に残留するガスや反応副生成物が処理室201内から除去される(パージ)。その後、処理室201内の雰囲気が不活性ガスに置換され(不活性ガス置換)、処理室201内の圧力が常圧に復帰される(大気圧復帰)。
ボートエレベータ115によりシールキャップ219が下降され、反応管203の下端が開口される。そして、処理済のウエハ200が、ボート217に支持された状態で、反応管203の下端から反応管203の外部に搬出される(ボートアンロード)。処理済のウエハ200は、ボート217より取出される(ウエハディスチャージ)。
ウエハ200の温度:100〜800℃(好ましくは、400〜750℃、本実施形態では、630℃)
処理室内圧力:5〜4000Pa(好ましくは、10〜1332Pa)
HCDSガス供給流量:1〜2000sccm(好ましくは、50〜500sccm)
NH3ガス供給流量:100〜30000sccm
N2ガス供給流量:1〜50000sccm
SiN膜の膜厚:0.2〜100nm
102 排気弁(排気部)
200 ウエハ(基板)
203 反応管
226 マニホールド(炉口部)
310 ガス供給管
340 ノズル部
350 ノズル支持部
Claims (13)
- 反応管と該反応管の下部に設けられる炉口部で少なくとも構成される処理室と、前記炉口部に設けられ、前記炉口部から前記反応管内まで立上ったノズルと、前記ノズルの上流側に設けられるガス供給系と、前記ガス供給系と前記ノズルの境界に設けられるよう構成されている遮断部と、前記遮断部を前記ガス供給系と連動させて前記ノズルから前記処理室内にガスを供給するよう、前記ガス供給系及び前記遮断部をそれぞれ制御する制御部と、を備えた基板処理装置。
- 前記遮断部は、前記遮断部と前記炉口部の側壁との間に配管を設けないよう前記炉口部の側壁に近接して取付けられるよう構成されている請求項1記載の基板処理装置。
- 更に、前記配管部は、前記遮断部より上流側に設けられるガス切替部を有し、
前記ガス供給系は、前記ガス切替部と前記遮断部との間の配管内の排気を実施する排気部を備えた請求項1記載の基板処理装置。 - 更に、前記遮断部の冷却を実施する冷却部を備え、
前記冷却部は、前記遮断部に冷却流体を供給するよう構成されている請求項1乃至請求項3のいずれか一つに記載の基板処理装置。 - 更に、前記炉口部の局所排気を実施する炉口ボックス部を備え、
前記遮断部は、前記炉口ボックス部内に設けられるよう構成されている請求項1乃至請求項4のいずれか一つに記載の基板処理装置。 - 炉口部から反応管内まで立上った第1ノズル及び第2ノズルと、
前記第1ノズルの上流側に設けられる第1ガス供給系と、
前記第2ノズルの上流側に設けられる第2ガス供給系と、
前記第1ノズルと前記第1ガス供給系の境界に設けられるよう構成されている第1遮断部と、
前記第2ノズルと前記第2ガス供給系の境界に設けられるよう構成されている第2遮断部と、
前記第1遮断部を前記第1ガス供給系と連動させて前記反応管内に第1のガスを供給し、及び前記第2遮断部を前記第2ガス供給系と連動させて前記反応管内に第2のガスを供給するよう、前記第1ガス供給系、前記第1遮断部、前記第2ガス供給系、前記第2遮断部を制御する制御部と、
を備えた基板処理装置。 - 前記制御部は、前記第1遮断部を開放させて前記反応管内の基板に対して前記第1のガスを供給させつつ、前記第2のガスを供給しないよう前記第2遮断部を閉塞させる、および/または、前記第2遮断部を開放させて前記反応管内の基板に対して前記第2のガスを供給させつつ、前記第1のガスを供給しないよう前記第1遮断部を閉塞させる請求項6記載の基板処理装置。
- 更に、前記反応管内のガスを排出する排気系を備え、
前記制御部は、前記反応管内の基板に対する前記第1のガス又は前記第2のガスの供給が終了すると、前記第1遮断部及び前記第2遮断部を閉塞させて、前記反応管内から前記第1のガス又は前記第2のガスを排出するよう前記排気系を制御する請求項6記載の基板処理装置。 - 更に、前記反応管内のガスを排出する排気系を備え、
前記制御部は、前記第1遮断部及び前記第2遮断部をそれぞれ開放させた状態で、前記反応管内をサイクルパージするよう、前記第1ガス供給系、前記第1遮断部、前記第2ガス供給系、前記第2遮断部、前記排気系を制御する請求項6記載の基板処理装置。 - 前記制御部は、前記第1遮断部を前記第1ガス供給系と連動させると共に前記第2遮断部を前記第2ガス供給系と連動させて前記反応管内に不活性ガスを供給するよう、前記第1ガス供給系、前記第1遮断部、前記第2ガス供給系、前記第2遮断部を制御する請求項6記載の基板処理装置。
- 反応管の下部に設けられる炉口部であって、
前記炉口部の内壁から前記反応管内まで立上ったノズルに接続される遮断部が、前記炉口部の外壁との間に配管を設けないよう取付けられるよう構成されている炉口部。 - 複数の基板を基板保持部材に載置した状態で前記基板保持部材を反応管内に搬入する工程と、
炉口部の内壁から前記反応管内まで立上った第1ノズル及び第2ノズルにそれぞれ接続される第1遮断部及び第2遮断部を、前記第1ノズル及び前記第2ノズルの上流側にそれぞれ設けられる第1ガス供給系及び第1ガス供給系とそれぞれ連動させて、前記第1ノズルを介して前記反応管内に第1のガス、前記第2ノズルを介して前記反応管内に第2のガスをそれぞれ供給し、前記反応管内の前記基板を処理する工程と、を少なくとも有する半導体装置の製造方法。 - 複数の基板を基板保持部材に載置した状態で前記基板保持部材を反応管内に搬入する手順と、
炉口部の内壁から前記反応管内まで立上った第1ノズル及び第2ノズルにそれぞれ接続される第1遮断部及び第2遮断部を、前記第1ノズル及び前記第2ノズルの上流側にそれぞれ設けられる第1ガス供給系及び第1ガス供給系とそれぞれ連動させて、前記第1ノズルを介して前記反応管内に第1のガス、及び前記第2ノズルを介して前記反応管内に第2のガスをそれぞれ供給し、前記反応管内の前記基板を処理する手順と、
をコントローラに実行させて基板処理装置として機能させるプログラム。
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CN109075070A (zh) | 2018-12-21 |
WO2017212546A1 (ja) | 2017-12-14 |
JP6616895B2 (ja) | 2019-12-04 |
KR20210074422A (ko) | 2021-06-21 |
US20220275515A1 (en) | 2022-09-01 |
KR20190002659A (ko) | 2019-01-08 |
US10640872B2 (en) | 2020-05-05 |
US20190106787A1 (en) | 2019-04-11 |
US20200232097A1 (en) | 2020-07-23 |
US11365482B2 (en) | 2022-06-21 |
KR102326377B1 (ko) | 2021-11-15 |
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