TWI615917B - 承托器及磊晶生長裝置 - Google Patents

承托器及磊晶生長裝置 Download PDF

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TWI615917B
TWI615917B TW105110249A TW105110249A TWI615917B TW I615917 B TWI615917 B TW I615917B TW 105110249 A TW105110249 A TW 105110249A TW 105110249 A TW105110249 A TW 105110249A TW I615917 B TWI615917 B TW I615917B
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wafer
holder
front surface
epitaxial
lift
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TW201703184A (zh
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野上彰二
和田直之
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Ｓｕｍｃｏ股份有限公司
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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    • C—CHEMISTRY; METALLURGY
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4586—Elements in the interior of the support, e.g. electrodes, heating or cooling devices
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
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Abstract

本發明提供一種承托器，不在晶圓片背表面產生提升銷帶來的瑕疵，且能夠抑制承托器產生粉塵。本發明一實施型態的承托器20包括承托器本體30及弧狀構件40A、40B。座槽部21的底面是以弧狀構件的正表面41A、41B的全體及承托器本體的正表面的一部分33所構成。搬送晶圓片W時，被提升銷44往上升的弧狀構件40A、40B的正表面的全體會以面接觸支持晶圓片W的背表面的僅外周部。

Description

承托器及磊晶生長裝置
本發明係有關於在磊晶生長裝置內載置晶圓片的承托器，以及具有該承托器的磊晶生長裝置。
磊晶晶圓片是用來在半導體晶圓片的表面上氣相成長磊晶膜。例如，在更加要求結晶的完全性的情況或者是需要阻抗率不同的多層構造的情況下等，會氣相成長(磊晶成長)單結晶矽薄膜於矽晶圓上，製造磊晶矽晶圓片。
磊晶晶圓片的製造中會使用例如枚葉式磊晶成長裝置。在此，一般的枚葉式磊晶成長裝置將參照第8圖來說明。如第8圖所示，磊晶生長裝置200具有腔室10，包括上部圓蓋11、下部圓蓋12及圓蓋安裝體13。該腔室10會劃分出磊晶膜形成室。腔室10的側面的相向位置設置了供給及排出反應氣體用的氣體供給口15及氣體排出口16。另一方面，腔室10內會配置載置晶圓片W的承托器20。承托器20被下方的承托器支持軸50所支持。承托器支持軸50包括主柱52、從此主柱52放射狀地等間隔延伸的3根臂部54(有一根未圖示)，並藉由臂部的前端的3個支持插銷58(有一根未圖示)來嵌合支持承托器20的背面外周部。又，承托器20形成有3個貫通孔(有一個未圖 示)，3根臂部54也各形成1個貫通孔。這些臂部的貫通孔及承托器的貫通孔會由提升銷44穿過。提升銷44的下端部被升降軸60所支持。支持搬入腔室10內的晶圓片W、將晶圓片W載置於承托器20上、以及將氣相成長後的磊晶晶圓片搬出腔室10外時，藉由升降軸60的升降，能夠一邊使提升銷44在臂部的貫通孔及承托器的貫通孔滑動並升降，一邊用其上端部升降晶圓片W。
這種磊晶生長裝置中，會以提升銷直接支持晶圓片W，而向上抬起。因此，晶圓片W的背面與提升銷抵接的部分會維持著提升銷一邊上升一邊持續與提升銷的上端部接觸。因此，該部分會有產生銷印的問題。
對此，專利文獻1揭露了以提升銷直接支持晶圓片但不向上抬起，而是用承托器的一部分來直接抬起晶圓片的技術。也就是說，專利文獻1的第2圖及第3圖揭露了提升環32(收容於設置在承托器本體22的周緣部的凹部中)因為提升銷48而從承托器本體22相對地被抬起，該提升環32支持晶圓片的邊緣部分。
專利文獻1：日本特開2001-313329號公報
根據專利文獻1的技術，抬起晶圓片時，不需要以提升銷局部地支持晶圓片，而是以承托器的一部分來支持晶圓片的邊緣部，因此能夠抑制晶圓片的背面產生提升銷造成的銷印。然而，本案發明人重新發現到專利文獻1的技術具有以下的問題。
也就是說，專利文獻1中，收容提升環位於承托器本體的周緣部上比晶圓片的邊緣更外側的位置。因此，氣相 成長時，提升環的正表面或凹部的周圍的承托器本體正表面都會接觸到來源氣體而生長出磊晶膜，有些情況下這磊晶膜在提升環與承托器本體之間的水平方向分離部位也有連結。之後，將提升環相對於承托器本體向上抬的話，在分離部位連結的磊晶膜斷裂，產生粉塵。這個粉塵會附著於製造的磊晶晶圓片的表面，產生許多缺陷，因此希望能夠有所抑制。
因此，本發明有鑑於上述問題，而提出一種承托器及磊晶生長裝置，不在晶圓片的背面產生提升銷帶來的銷印，且能夠抑制來自承托器的粉塵。
解決上述問題的本發明的主要構造如下。(1)一種承托器，用以在磊晶生長裝置內載置晶圓片，其中：該承托器的正表面形成有載置該晶圓片的座槽部；該承托器具有承托器本體以及分別載置於2個以上的凹部的弧狀構件，其中該2個以上的各凹部設置於該承托器本體的正表面的外周部；該座槽部的底面由該弧狀構件的正表面的全體以及該承托器本體的正表面的一部分所構成；該承托器本體設置有2個以上的貫通孔，用以使提升銷穿過，其中該提升銷支持該2個以上的各弧狀構件的背表面並升降該2個以上的各弧狀構件；將該晶圓片載置於該座槽部時、以及將該晶圓片從該座槽部搬出時，被該提升銷往上升的該弧狀構件的正表面的全體會發揮支持面的功能，以面接觸該晶圓片的背表面的僅外周部。
(2)在上述(1)所載的承托器中，該弧狀構件的數目為2，且從正表面觀看下位於略線對稱的位置。
(3)在上述(1)或(2)所載承托器中，該提升銷固定於該弧狀構件。
(4)一種磊晶生長裝置，包括：上述(1)至(3)任一者所載的承托器；以及升降機構，支持該提升銷的下端部來升降該提升銷。
本發明的承托器及磊晶生長裝置，不在晶圓片的背面產生提升銷帶來的銷印，且能夠抑制來自承托器的粉塵。
100‧‧‧磊晶生長裝置
10‧‧‧腔室
11‧‧‧上部圓蓋
12‧‧‧下部圓蓋
13‧‧‧圓蓋安裝體
14‧‧‧加熱燈
15‧‧‧氣體供給口
16‧‧‧氣體排出口
20‧‧‧承托器
21‧‧‧座槽部
30‧‧‧承托器本體
31A、31B‧‧‧凹部
32‧‧‧承托器本體的正表面外周部
32A‧‧‧晶圓片支持面
32B‧‧‧縱壁面
33‧‧‧承托器本體的正表面中心部
34A、34B‧‧‧凹部的底面
35‧‧‧貫通孔
40A、40B‧‧‧弧狀構件
41A、41B‧‧‧弧狀構件的正表面
42A、42B‧‧‧弧狀構件的背表面
43A、43B‧‧‧弧狀構件的外周面
44‧‧‧提昇銷
45A、45B‧‧‧弧狀構件的內周面
50‧‧‧承托器支持軸
52‧‧‧主柱
54‧‧‧臂部
56‧‧‧貫通孔
58‧‧‧支持插銷
60‧‧‧升降軸
62‧‧‧主柱
64‧‧‧支柱
66‧‧‧支柱的前端部
70‧‧‧晶圓片搬運刀
72‧‧‧晶圓片支持部
W‧‧‧晶圓片
第1圖係本發明一實施型態的承托器20的概要剖面圖，(A)是沒有載置晶圓片的狀態(第2(C)圖的I-I剖面圖)，(B)是將晶圓片W載置於座槽部21的狀態，(C)是以弧狀構件40A、40B抬起晶圓片W的狀態。
第2(A)圖係第1圖的承托器20的承托器本體30的上視圖；第2(B)圖係第1圖的承托器20的弧狀構件40A、40B的上視圖。第2(C)圖係將弧狀構件40A、40B載置於承托器本體30的凹部的狀態下的承托器20的上視圖。
第3圖係第1(C)圖的放大剖面圖。
第4圖係比較例的承托器與第3圖相同的剖面圖。
第5(A)圖係承托器支持軸50的分解立體圖；第5(B)圖係升降軸60的分解立體圖。
第6圖係本發明一實施型態的磊晶生長裝置100的概要圖，顯示晶圓片W載置於承托器的狀態(氣相成長時)。
第7圖係本發明一實施型態的磊晶生長裝置100的概要圖， 顯示弧狀構件40A、40B抬起晶圓片W的狀態。
第8圖係顯示習知的磊晶生長裝置200的概要圖，顯示提升銷44相對於承托器20下降的狀態(氣相成長時)。
參照第6圖及第7圖，說明本發明一實施型態的磊晶生長裝置100。又，參照第1~3圖來說明包含於此磊晶生長裝置100中的本發明一實施型態的承托器20。
(磊晶生長裝置)
第6圖及第7圖所示的磊晶生長裝置100具有腔室10、加熱燈14、第1圖及第2圖所示的承托器20、第5(A)圖所示的承托器支持軸50、第5(B)圖所示的升降軸60。
(腔室)
腔室10包括上部圓蓋11、下部圓蓋12及圓蓋安裝體13，這個腔室10劃分出磊晶膜形成室。腔室10的側面的相對位置設置有供給及排出反應氣體的氣體供給口15及氣體排出口16。
(加熱燈)
加熱燈14配置於腔室10的上側領域及下側領域，一般來說會使用升降溫速度快、溫度控制性優秀的鹵素燈或紅外線燈。
(承托器的主要構造)
參照第1圖及第2圖，說明承托器20的主要構造。承托器20是用來在腔室10內部載置晶圓片W的圓盤狀構件。承托器20能夠使用以碳石墨為母材，在表面鍍上碳化矽的材 料。參照第1(A)圖及第1(B)圖，承托器20的正表面形成有載置晶圓片W的座槽部21。座槽部21的開口端的直徑可考量晶圓片W的直徑而適當設定，通常會比晶圓片W的直徑大1.0~2.0mm左右。
參照第1(A)~1(C)圖，承托器20具有承托器本體30、以及2個弧狀構件40A、40B(分別載置於2個凹部31A、31B，凹部31A、31B設置於承托器本體的正表面的外周部)。
參照第1(A)~(C)圖及第2(A)圖，承托器本體30的正表面包括正表面外周部32、晶圓片支持面32A、縱壁面32B、正表面中心部33、凹部31A、31B表面(包含底面34A、34B)。正表面外周部32位於第1(A)圖所示的座槽部21的周圍。晶圓片支持面32A位於正表面外周部32的內側，是以線接觸支撐晶圓片W的背表面周緣部的，構成座槽部的一部分的傾斜面。縱壁面32B是從晶圓片支持面32A的內周端延續的，構成座槽部的一部分的壁面。正表面中心部33從縱壁面32B延續的，構成座槽部21的底面的一部分。凹部31A、31B為了收容、載置弧狀構件40A、40B，從第2(A)圖的正表面觀看與弧狀構件40A、40B相同形狀。凹部31A、31B的尺寸會設定為弧狀構件40A、40B與承托器本體30間的間隙(Clearance)為必要的最小限度(例如0.1~1.0mm左右)。承托器本體30設置有在垂直方向貫通底面34A、34B及背表面的4個貫通孔35。4個貫通孔35會由後述的提升銷44所插通。
參照第1(A)~1(C)圖及第2(B)圖，弧狀構件40A、40B具有正表面41A、41B及背表面42A、42B，是以 必要的最小限度的間隙(Clearance)分別被載置於凹部31A、31B，從上視圖來看為弧狀的構件。如第1(A)圖所示，正表面41A、41B構成座槽部21的底面的一部分，背表面42A、42B分別接觸及支持凹部的底面34A、34B。從穩定支持晶圓片W的觀點來看，弧狀構件的外周面43A、43B以及內周面45A、45B從上視圖下來具有相同曲率為佳，這個曲率為晶圓片的曲率的80~120%左右為佳，100%更佳。又，從穩定支持晶圓片W的觀點來看，2個弧狀構件40A、40B如第2(C)圖所示位於略線對稱的位置為佳。
從背表面42A、42B分別延伸出2根提升銷44。總共4根的提升銷44分別穿過設置於承托器本體的4個貫通孔35。提升銷44藉由後述的升降軸60而升降於鉛直方向的上下，藉此能夠一邊支持弧狀構件的背表面42A、42B，一邊使弧狀構件40A、40B相對於承托器本體30裝卸。這個動作將說明於後。從弧狀構件穩定地升降的觀點來看，提升銷44在每一個弧狀構件設置兩根為佳，將這2根的提升銷設置於弧狀構件的兩端部附近為佳。本實施型態中，提升銷44固定於弧狀構件40A、40B，但提升銷44也可以不固定於弧狀構件40A、40B。
如第1(A)、1(B)圖所示，座槽部21的底面是由弧狀構件的正表面41A、41B全體、以及的承托器本體的正表面的一部分(具體來說是正表面中心部33)所構成。也就是說，弧狀構件40A、40B分別被載置於凹部31A、31B，晶圓片W被載置於座槽部21的狀態下，座槽部21的表面當中的弧狀構件的正表面41A、41B全體與承托器本體的正表面中 心部33會與晶圓片W的背表面有間隔地相對。
另一方面，如第1(C)圖所示，將晶圓片W載置於座槽部21時，以及將晶圓片W從座槽部21搬出(也就是搬運晶圓片W時)時，承托器本體30及弧狀構件40A、40B在鉛直方向分開，因為提升銷44而上升的弧狀構件的正表面41A、41B全體會發揮支持面的功能，以面接觸來支持僅晶圓片W的背表面的外周部。因此，能夠抑制提升銷造成的銷印產生於晶圓片W的背表面。在此，本說明書中「晶圓片的背表面的外周部」是指晶圓片的背面中，從晶圓片中心離開晶圓片半徑70%以上的距離的領域。
支持於弧狀構件40A、40B的晶圓片W，會被從第2(C)圖所示的方向插入的
Figure TWI615917BD00001
字型的搬運刀70的晶圓片支持部72，支持住晶圓片W的背表面中心部，然後被搬運到腔室外。弧狀構件40A、40B配置成不與搬送刀的晶圓片支持部72產生干涉。
弧狀構件40A、40B的表面部或弧狀構件40A、40B的全體以柔軟的材料(玻璃碳)組成為佳。因為能夠抑制面接觸支持晶圓片W的背表面時發生損傷。
又，將承托器本體的凹部31A、31B的底部與弧狀構件40A、40B做成有打洞的構造為佳。因為能夠促進氫氣流進晶圓片W的背表面，抑制晶圓片的背表面產生暈痕。
(承托器支持軸)
參照第5(A)圖，承托器支持軸50在腔室10內從下方支持承托器20，具有主柱52、4根臂部54、4根支持銷 58。主柱52與承托器的中心幾乎同軸配置。4根臂部54從主柱52朝向承托器20的周緣部下方放射狀地延伸，分別具有貫通鉛直方向的貫通孔56。另外，本說明書中的「承托器的周緣部」是指從承托器中心離開承托器半徑的80%以上的距離的外側領域。支持銷58分別設置於4根臂部54的前端，直接支持承托器20。也就是說，支持銷58支持承托器的背表面周緣部。4個貫通孔56分別被4根提升銷44插通。承托器支持銷50以石英構成為佳，特別是以合成石英構成更佳。然而，支持銷58的前端部分用與承托器20相同的碳化矽構成為佳。
(升降軸)
如第5(B)圖所示，作為升降機構的升降軸60具有主柱62及4根支柱64，主柱62劃分出收容承托器支持軸的主柱52的中空，並且與主柱52共有旋轉軸。4根支柱64是在主柱62的前端分歧出來。升降軸60藉由這些支柱64的前端部66分別支持提升銷44的下端部。升降軸60以石英構成為佳。升降軸60藉由沿著承托器支持軸的主柱52在鉛直方向上下移動，能夠使提升銷44升降。
(磊晶晶圓片的製造步驟)
接著，適當地參照第6圖及第7圖來說明晶圓片W搬入腔室10內、對晶圓片W氣相成長出磊晶膜、將製造的磊晶晶圓片搬出腔室10外的一連串的動作。
被第2(C)圖所示的搬運刀70支持而搬入腔室10內的晶圓片W會被暫時載置於提升銷44所抬起的弧狀構件40A、40B的正表面41A、41B上。提升銷44的上升移動會透 過支持它們的下端部的升降軸60的上升移動來實行。
接著，藉由使承托器支持軸50上升，將承托器本體30移動到弧狀構件40A、40B的位置，形成晶圓片W載置於承托器20的座槽部21的狀態。之後，藉由加熱燈14將晶圓片W加熱到1000℃以上，且一邊從氣體供給口15供給反應氣體至腔室10內，氣相成長出既定厚度的磊晶膜，製造磊晶晶圓片。氣相成長中，將主柱52作為旋轉軸使承托器支持軸50旋轉，藉此旋轉承托器20及其上的晶圓片W。
之後，使承托器支持軸50下降，藉此使承托器本體30下降。這個下降會進行到提升銷44被升降軸60支持，弧狀構件40A、40B從承托器本體30分離為止。將製造後的磊晶晶圓片支持於提升銷44所支持的弧狀構件40A、40B的正表面41A、41B。然後，將搬送刀70導入至腔室10內，使提升銷44下降，將磊晶晶圓片載置於搬送刀的晶圓片支持部72上。這麼做，將磊晶晶圓片從弧狀構件40A、40B傳遞給搬送刀70。之後，將搬送刀70與磊晶晶圓片往腔室10外搬出。
(承托器的特徵部分的構造)
在此，詳細說明本發明的特徵的弧狀構件40A、40B的位置。
參照第3圖，本實施型態的承托器20中，弧狀構件的正表面41A、41B的全體面向晶圓片W的背表面。也就是，配合參照第2(C)圖，凹部31A、31B全體及弧狀構件40A、40B全體位於晶圓片W的外周面正下方，而且比晶圓片的邊緣部更內側。
將採用這種構造的技術意義與顯示比較例的第4圖對比來說明。第4圖中弧狀構件40A的表面是由位於座槽部21的周圍的水平面46A、位於此水平面46A的內側以線接觸支持晶圓片W的背表面周緣部的晶圓片支持面46B、從此晶圓片支持面46B的內周端延續的縱壁面46C、從此縱壁面46C延續而構成座槽部21的底面的一部分的水平面46D所構成。也就是說，弧狀構件40A延伸到承托器本體30的周緣部而且是比晶圓片W的邊緣部更外側的位置。因此，氣相成長時，水平面46A及承托器本體的正表面外周部32都會接觸到來源氣體而成長出磊晶膜，有些情況下這個磊晶膜會在水平面46A與正表面外周部32之間的水平方向分離部上連結。之後，將弧狀構件40A相對於承托器本體30向上抬起時，在分離部上連結的磊晶膜斷裂而產生粉塵。這些粉塵會附著於製造的磊晶晶圓片的表面，產生許多缺陷。
相對於此，第3圖所示的本實施型態中，弧狀構件40A、40B的全體位於晶圓片W的外周部的正下方且比晶圓片的邊緣部更靠內側的位置。因此，弧狀構件40A、40B與承托器本體30之間的水平方向分離部上不會產生磊晶膜，結果就不會發生因為磊晶膜造成的粉塵。
(發明例1)
使用第1~3圖所示的承托器及第6、7圖所示的磊晶生長裝置，根據上述的步驟來製造磊晶矽晶圓片。第3圖中，設定晶圓片的邊緣與座槽部端部之間的間隙為1.25mm，凹部的外側端部與晶圓片的邊緣之間的水平方向距離為2.25mm。磊晶 晶圓片的基板會使用摻雜硼的直徑300mm的矽晶圓片。
(比較例)
除了使用第4圖所示的承托器以外，與發明例相同地製造磊晶矽晶圓片。
[氣相成長條件]
磊晶矽晶圓片的製造是將矽晶圓片導入腔室內，用上述說明的方法載置於承托器上。接著，在氫氣環境下以1150℃進行氫氣烘烤。以1150℃在矽晶圓片的表面成長出4μm的矽磊晶膜，獲得磊晶矽晶圓片。在此，原料來源氣體會使用三氯氫矽氣體，又，摻雜氣體會使用乙硼烷氣體、載子氣體會使用氫氣。之後，以先前所述的方法將磊晶矽晶圓片往腔室外搬出。
[背表面品質的評價]
關於發明例及比較例所製造的磊晶晶圓片，會使用表面檢查裝置(KLA-Tencor公司製的Surfscan SP-2)，在DCO模式下觀察對應到提升銷的位置的背表面領域，測量出具有雷射反射值的設定值以上的散亂強度的面積(銷印強度)，評價磊晶晶圓片的背表面的提升銷所造成的瑕疵。結果，比較例、發明例皆為0mm2，磊晶晶圓片的背表面沒有確認到來自於提升銷的瑕疵。
[磊晶晶圓片的缺陷數的評價]
關於發明例及比較例中製造的各10片的磊晶晶圓片，會使用表面檢查裝置(KLA-Tencor公司製的Surfscan SP-2)，在DCO模式(Dark Field Composite Oblique模式)觀察磊晶膜表面，調查直徑在0.25μm以上的LPD(Light Point Defect)的個數。藉由這個量測結果，能夠評價粉塵的粒子產生狀況。結果，相對於比較例中的20.1個/晶圓片(標準差9.1)，發明例中減少為6.4個/晶圓片(標準差3.7)。這顯示了發明例能夠抑制承托器產生粉塵。
本發明的承托器及磊晶生長裝置，不在晶圓片背表面產生提升銷帶來的瑕疵，且能夠抑制承托器產生粉塵，因此能夠良好地適用於磊晶晶圓片的製造。
20‧‧‧承托器
21‧‧‧座槽部
30‧‧‧承托器本體
31A、31B‧‧‧凹部
32‧‧‧承托器本體的正表面外周部
32A‧‧‧晶圓片支持面
32B‧‧‧縱壁面
33‧‧‧承托器本體的正表面中心部
34A、34B‧‧‧凹部的底面
40A、40B‧‧‧弧狀構件
41A、41B‧‧‧弧狀構件的正表面
42A、42B‧‧‧弧狀構件的背表面
43A、43B‧‧‧弧狀構件的外周面
44‧‧‧提昇銷
W‧‧‧晶圓片

Claims (4)

  1. 一種承托器，用以在磊晶生長裝置內載置晶圓片，其中：該承托器的正表面形成有載置該晶圓片的座槽部；該承托器具有承托器本體以及分別載置於2個以上的凹部的弧狀構件，其中該2個以上的各凹部設置於該承托器本體的正表面的外周部；該座槽部的底面由該弧狀構件的正表面的全體以及該承托器本體的正表面的一部分所構成；該承托器本體設置有2個以上的貫通孔，用以使提升銷穿過，其中該提升銷支持該2個以上的各弧狀構件的背表面並升降該2個以上的各弧狀構件；將該晶圓片載置於該座槽部時、以及將該晶圓片從該座槽部搬出時，被該提升銷往上升的該弧狀構件的正表面的全體會發揮支持面的功能，以面接觸該晶圓片的背表面的僅外周部。
  2. 如申請專利範圍第1項所述之承托器，其中該弧狀構件的數目為2，且從正表面觀看下位於略線對稱的位置。
  3. 如申請專利範圍第1或2項所述之承托器，其中該提升銷固定於該弧狀構件。
  4. 一種磊晶生長裝置，包括：如申請專利範圍第1至3項任一項所述之承托器；以及升降機構，支持該提升銷的下端部來升降該提升銷。
TW105110249A 2015-04-27 2016-03-31 承托器及磊晶生長裝置 TWI615917B (zh)

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