CN107851560B - 基座、外延生长装置、及外延晶圆 - Google Patents
基座、外延生长装置、及外延晶圆 Download PDFInfo
- Publication number
- CN107851560B CN107851560B CN201680024186.1A CN201680024186A CN107851560B CN 107851560 B CN107851560 B CN 107851560B CN 201680024186 A CN201680024186 A CN 201680024186A CN 107851560 B CN107851560 B CN 107851560B
- Authority
- CN
- China
- Prior art keywords
- wafer
- susceptor
- arc
- epitaxial
- base
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/02—Pretreatment of the material to be coated
- C23C16/0209—Pretreatment of the material to be coated by heating
- C23C16/0218—Pretreatment of the material to be coated by heating in a reactive atmosphere
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/24—Deposition of silicon only
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
- C23C16/4586—Elements in the interior of the support, e.g. electrodes, heating or cooling devices
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/12—Substrate holders or susceptors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67115—Apparatus for thermal treatment mainly by radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68735—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge profile or support profile
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68742—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a lifting arrangement, e.g. lift pins
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Mechanical Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
本发明提供一种基座,在晶圆的背面及倒角部不产生与升降销或基座接触而引起的深度瑕疵,且能够抑制来自基座的粉尘。本发明的一实施方式的基座(20)包括基座主体(30)及弧形构件(40A、40B)。座槽部(21)的底面是由弧形基座构件的正面(41A、41B)的全体及基座主体的正面的一部分(33)所构成。搬送晶圆(W)时,被升降销(44)提升的弧形构件(40A、40B)的正面的全体以仅与晶圆(W)的背面的外周部面接触的方式支持。
Description
技术领域
本发明涉及一种在外延生长装置内用于载置晶圆的基座、具有该基座的外延生长装置、及能够通过该外延生长装置来制造的外延晶圆。
背景技术
外延晶圆是一种在半导体晶圆的表面上气相生长外延膜的晶圆。例如,在更加要求晶体的完全性的情况或者是需要阻抗率不同的多层结构的情况等时,会气相生长(外延生长)单晶硅薄膜于硅晶圆上,而制造外延硅晶圆。
外延晶圆的制造中使用例如枚叶式外延生长装置。在此,对于一般的枚叶式外延生长装置将参考图8来说明。如图8所示,外延生长装置200具有腔室10,包括上部穹形盖11、下部穹形盖12及穹形盖安装体13。该腔室10划分外延膜形成室。腔室10中,在其侧面的相向位置设置有供给及排出反应气体的气体供给口15及气体排出口16。另一方面,腔室10内配置有载置晶圆W的基座20。基座20被基座支持轴50从下方支持。基座支持轴50包括主柱52、从该主柱52呈放射状等间隔延伸的3根臂部54(有一个未图示),并通过臂部的末端的3个支承销58(有一个未图示)来嵌合支持基座20的背面外周部。并且,在基座20形成有3个贯通孔(有一个未图示),在3根臂部54也各形成1个贯通孔。在这些臂部的贯通孔及基座的贯通孔插通升降销44。升降销44的下端部被升降轴60支持。支持被搬入腔室10内的晶圆W,将该晶圆W载置于基座20上,并将气相生长后的外延晶圆搬出腔室10外时,通过升降轴60进行升降,能够一边使升降销44在臂部的贯通孔及基座的贯通孔滑动一边升降,并且用其上端部升降晶圆W。
这种外延生长装置中,由升降销直接支持晶圆W,向上抬起。因此,晶圆W的背面与升降销抵接的部分会维持升降销一边上升一边持续与升降销的上端部接触。因此,晶圆W的背面的相应部分会产生深度超过0.5μm尺寸的瑕疵(销印)的问题。
对此,专利文献1中记载有用升降销直接支持晶圆但并非向上抬起,而是用基座的一部分来直接抬起晶圆的技术。即,专利文献1的图2及图3记载有容纳于设置在基座主体22的周缘部的凹部的提升环32通过升降销48而从基座主体22被相对地抬起,由从该提升环32向内侧突出的3个提升构件36来支持晶圆的边缘部分。
现有技术文献
专利文献
专利文献1:日本特开2001-313329号公报。
根据专利文献1的技术,抬起晶圆时,不需要由升降销局部地支持晶圆,而是由基座的一部分来支持晶圆的边缘部,因此能够抑制晶圆的背面产生由升降销引起的瑕疵。然而,由从提升环32向内侧突出的3个提升构件36(即突起)来支持晶圆的边缘部分,通过点接触支持晶圆的倒角部(边缘部),因而担心晶圆的倒角部还是会发生深度超过0.5μm尺寸的瑕疵。并且,本案发明人等重新认识到专利文献1的技术具有如下问题。
即,专利文献1中,容纳有提升环的凹部位于基座主体的周缘部上且比晶圆的边缘更靠外侧的位置。因此,气相生长时,提升环的正面或凹部的周围的基座主体正面都会接触到来源气体而生长出外延膜,其外延膜在提升环与基座主体之间的水平方向分离部位也有连接的情况。之后,将提升环相对于基座主体向上抬时,在分离部连接的外延膜断裂,产生粉尘。这个粉尘会附着于制造的外延晶圆的表面,产生许多缺陷,因此希望能够有所抑制。
发明内容
因此,本发明鉴于上述问题,目的在于提供一种在晶圆的背面及倒角部不产生与升降销或基座接触而引起的深度瑕疵,且能够抑制来自基座的粉尘的基座、外延生长装置。并且,本发明的目的在于提供一种观察不到由升降销与基座的接触引起而产生的深度超过0.5μm的瑕疵的外延晶圆。
用于解决技术课题的方案
解决上述问题的本发明的主要结构如下。
(1)一种基座,用于在外延生长装置内载置晶圆,其特征在于,
所述基座的正面形成有载置所述晶圆的座槽部,
所述基座具有基座主体、及分别载置于2个以上的凹部的弧形构件,该2个以上的凹部设置于该基座主体的正面的外周部,
所述座槽部的底面由所述弧形构件的正面的全体及所述基座主体的正面的一部分构成,
所述基座主体设置有用于插通升降销的2个以上的贯通孔,该升降销支持所述2个以上的各弧形构件的背面并升降所述2个以上的各弧形构件,
将所述晶圆载置于所述座槽部时、及将所述晶圆从所述座槽部搬出时,被所述升降销提升的所述弧形构件的正面的全体会发挥支持面的功能,以仅与所述晶圆的背面的外周部面接触的方式支持。
(2)上述(1)所记载的基座,其中,所述弧形构件的个数为2,且从正面观察时位于大致线对称的位置。
(3)上述(1)或(2)所记载的基座,其中,所述升降销固定于所述弧形构件。
(4)一种外延生长装置,包括:
上述(1)至(3)中任一个所记载的基座;及
升降机构,支持所述升降销的下端部来升降所述升降销。
(5)一种外延晶圆,在晶圆表面上形成有外延层,其中,
使用激光显微镜观察所述外延晶圆的背面及倒角部时,观察不到深度超过0.5μm的瑕疵。
(6)上述(5)所记载的外延晶圆,其中,
使用激光显微镜观察所述外延晶圆的背面的中央部时,观察不到深度为0.3μm以下的瑕疵。
发明效果
本发明的基座及外延生长装置,在晶圆的背面及倒角部不产生由升降销或与基座接触而引起的深度瑕疵,并且能够抑制来自基座的粉尘。并且,能够通过使用该基座及外延生长装置来制造观察不到由于升降销或与基座接触而发生的深度超过0.5μm的瑕疵的外延晶圆。
附图说明
图1是本发明的一实施方式的基座20的示意剖视图,图1中的(A)是没有载置晶圆的状态(图2中的(C)的I-I剖视图),图1中的(B)是将晶圆W载置于座槽部21的状态,图1中的(C)是由弧形构件40A、40B抬起晶圆W的状态。
图2中的(A)是图1的基座20的基座主体30的俯视图,图2中的(B)是图1的基座20的弧形构件40A、40B的俯视图,图2中的(C)是将弧形构件40A、40B载置于基座主体30的凹部的状态下的基座20的俯视图。
图3是图1中的(C)的放大剖视图。
图4是比较例的基座的与图3相同的剖视图。
图5中的(A)是基座支持轴50的分解立体图,图5中的(B)是升降轴60的分解立体图。
图6是本发明的一实施方式的外延生长装置100的示意图,显示晶圆W载置于基座的状态(气相生长时)。
图7是本发明的一实施方式的外延生长装置100的示意图,显示弧形构件40A、40B抬起晶圆W的状态。
图8是显示现有的外延生长装置200的示意图,显示升降销44相对于基座20下降的状态(气相生长时)。
图9中的(A)是现有例,图9中的(B)在发明例中,是使用激光显微镜观察外延硅晶圆的背面的图像。
具体实施方式
参考图6及图7,说明本发明的一实施方式的外延生长装置100。并且,参考图1~图3来说明包含于该外延生长装置100中的本发明的一实施方式的基座20。
(外延生长装置)
图6及图7所示的外延生长装置100具有腔室10、加热灯14、也在图1及图2表示的基座20、也在图5中的(A)表示的基座支持轴50、也在图5中的(B)表示的升降轴60。
(腔室)
腔室10包括上部穹形盖11、下部穹形盖12及穹形盖安装体13,该腔室10划分出外延膜形成室。在腔室10的侧面的相对位置设置有供给及排出反应气体的气体供给口15及气体排出口16。
(加热灯)
加热灯14配置于腔室10的上侧区域及下侧区域,一般而言,会使用升降温速度快、温度控制性优秀的卤素灯或红外线灯。
(基座的主要结构)
参考图1及图2,说明基座20的主要结构。基座20是用来在腔室10内部载置晶圆W的圆盘状构件。基座20能够使用于石墨炭(石墨)为母材,在其表面镀上碳化硅的材料。参考图1中的(A)及图1中的(B),基座20的正面形成有载置晶圆W的座槽部21。座槽部21的开口端的直径可考虑晶圆W的直径而适当设定,通常会设为比晶圆W的直径大1.0~2.0mm左右。
参考图1中的(A)~图1中的(C),基座20具有基座主体30、及2个弧形构件40A、40B,该2个弧形构件40A、40B分别载置于2个凹部31A、31B,该凹部31A、31B设置于基座主体的正面的外周部。
参考图1中的(A)~图1中的(C)及图2中的(A),基座主体30的正面包括正面外周部32、晶圆支持面32A、纵壁面32B、正面中心部33、凹部31A、31B表面(包含底面34A、34B)。正面外周部32位于图1中的(A)所示的座槽部21的周围。晶圆支持面32A位于正面外周部32的内侧,是以线接触支持晶圆W的背面周缘部的,构成座槽部的一部分的倾斜面。纵壁面32B是从晶圆支持面32A的内周端延续的,构成座槽部的一部分的壁面。正面中心部33是从纵壁面32B延续的,构成座槽部21的底面的一部分。凹部31A、31B为了容纳、载置弧形构件40A、40B,而从图2中的(A)的正面观察时,与弧形构件40A、40B具有相同形状。凹部31A、31B的尺寸会设定为弧形构件40A、40B与基座主体30之间的间隙(Clearance)为必要的最小限度(例如0.1~1.0mm左右)。基座主体30设置有在垂直方向贯通底面34A、34B及背面的4个贯通孔35。4个贯通孔35插通有后述的升降销44。
参考图1中的(A)~图1中的(C)及图2中的(B),弧形构件40A、40B分别具有正面41A、41B及背面42A、42B,是以必要的最小限度的间隙(Clearance)分别被载置于凹部31A、31B,从俯视图来看为弧形的构件。如图1中的(A)所示,正面41A、41B构成座槽部21的底面的一部分,背面42A、42B分别接触及支持凹部的底面34A、34B。从稳定支持晶圆W的观点来看,弧形构件的外周面43A、43B及内周面45A、45B俯视观察时优选具有相同曲率,其曲率优选晶圆曲率的80~120%左右,更优选为100%。并且,从稳定支持晶圆W的观点来看,2个弧形构件40A、40B如图2中的(C)所示那样优选位于大致线对称的位置。
从背面42A、42B分别延伸出2根升降销44。总共4根的升降销44分别插通设置于基座主体的4个贯通孔35。升降销44通过后述的升降轴60而升降于铅直方向的上下方,由此能够一边支持弧形构件的背面42A、42B,一边使弧形构件40A、40B相对于基座主体30装卸。该动作将后述说明。从弧形构件稳定地升降的观点来看,优选升降销44在每一个弧形构件设置两根,优选将这2根的升降销设置于弧形构件的两端部附近。本实施方式中,升降销44固定于弧形构件40A、40B,但升降销44也可以不固定于弧形构件40A、40B。
如图1中的(A)、图1中的(B)所示,座槽部21的底面是由弧形构件的正面41A、41B全体、及基座主体的正面的一部分(具体而言是正面中心部33)所构成。即,弧形构件40A、40B分别被载置于凹部31A、31B,晶圆W被载置于座槽部21的状态下,座槽部21的表面中的弧形构件的正面41A、41B全体与基座主体的正面中心部33会与晶圆W的背面有间隔地相对。
另一方面,如图1中的(C)所示,将晶圆W载置于座槽部21时,以及将晶圆W从座槽部21搬出(即传送晶圆W)时,基座主体30及弧形构件40A、40B在铅直方向分开,借助升降销44上升的弧形构件的正面41A、41B全体会发挥支持面的功能,以仅与晶圆W的背面的外周部面接触的方式支持。因此,能够抑制在晶圆W的背面及倒角部发生由升降销或与基座接触而引起的深度瑕疵。具体而言,根据本实施方式,使用激光显微镜观察制造的外延晶圆的背面及倒角部时,观察不到深度超过0.5μm的瑕疵。在此,本说明书中,“晶圆的背面的外周部”是指,在晶圆的背面中,从晶圆中心远离晶圆半径70%以上的区域。
并且,本说明书中,“晶圆的背面的中央部”是指所述晶圆的背面的外周部的内侧区域,即,从晶圆中心离开小于晶圆半径70%的区域。而且,本实施方式中,由于弧形构件40A、40B仅支持晶圆W的背面的外周部,因此背面的中央部不与任何构件接触(不仅没有点接触,而且也没有面接触)。因此,使用激光显微镜观察制造的外延晶圆的背面的中央部时,观察不到深度0.3μm以下的瑕疵(接触瑕疵)。外延生长处理中,晶圆W通过被高温热处理而引起上凸或下凸翘曲等现象。因此,晶圆W的背面中央部若存在接触瑕疵,会有可能以其瑕疵为起点而容易发生滑移位错,但本实施方式则没用这种可能性。
支持于弧形构件40A、40B的晶圆W,会被从图2中的(C)所示的方向插入的“コ”字型的传送叶片70的晶圆支持部72,支持住晶圆W的背面中心部,而被传送到腔室外。弧形构件40A、40B配置成不与传送叶片的晶圆支持部72产生干涉。
弧形构件40A、40B的表面部或弧形构件40A、40B的全体优选以柔软的材料(玻璃碳)组成。因为能够抑制面接触支持晶圆W的背面时发生损伤。
并且,优选将基座主体的凹部31A、31B的底部与弧形构件40A、40B做成有打洞的结构。因为能够促进氢气流进晶圆W的背面,抑制晶圆的背面产生晕痕(雾痕)。
(基座支持轴)
参考图5中的(A),基座支持轴50在腔室10内从下方支持基座20,具有主柱52、4根臂部54、及4根支持销58。主柱52与基座的中心几乎同轴配置。4根臂部54从主柱52朝向基座20的周缘部下方放射状地延伸,分别具有贯通铅直方向的贯通孔56。另外,本说明书中的“基座的周缘部”是指从基座中心离开基座半径的80%以上的距离的外侧区域。支持销58分别设置于4根臂部54的末端,直接支持基座20。即,支持销58支持基座的背面周缘部。4个贯通孔56分别插通有4根升降销44。基座支持销50优选由石英构成,特别希望是由合成石英构成。然而,支持销58的末端部分优选用与基座20相同的碳化硅构成。
(升降轴)
如图5中的(B)所示,作为升降机构的升降轴60具有主柱62及4根支柱64,主柱62划分出容纳基座支持轴的主柱52的中空,并且与主柱52共有旋转轴。4根支柱64是在由主柱62的末端分歧出。升降轴60通过这些支柱64的末端部66分别支持升降销44的下端部。升降轴60优选由石英构成。升降轴60通过沿着基座支持轴的主柱52在铅直方向上下移动,能够使升降销44升降。
(外延晶圆的制造工序)
接着,适当地参考图6及图7来说明晶圆W搬入腔室10内、对晶圆W气相生长出外延膜、及将制造的外延晶圆搬出腔室10外的一连串的动作。
被图2中的(C)所示的传送叶片70支持而搬入腔室10内的晶圆W会被暂时载置于升降销44所抬起的弧形构件40A、40B的正面41A、41B上。升降销44的上升移动会透过支持它们的下端部的升降轴60的上升移动来实行。
接着,通过使基座支持轴50上升,将基座主体30移动到弧形构件40A、40B的位置,形成晶圆W载置于基座20的座槽部21的状态。之后,通过加热灯14将晶圆W加热到1000℃以上,且一边从气体供给口15供给反应气体至腔室10内,气相生长出规定厚度的外延膜,制造外延晶圆。气相生长中,将主柱52作为旋转轴使基座支持轴50旋转,由此旋转基座20及其上的晶圆W。
之后,使基座支持轴50下降,由此使基座主体30下降。这个下降会进行到升降销44被升降轴60支持,弧形构件40A、40B从基座主体30分离为止。将制造后的外延晶圆支持于升降销44所支持的弧形构件40A、40B的正面41A、41B。然后,将传送叶片70导入至腔室10内,使升降销44下降,将外延晶圆载置于传送叶片的晶圆支持部72上。这样,将外延晶圆从弧形构件40A、40B传递给传送叶片70。之后,将传送叶片70与外延晶圆往腔室10外搬出。
(基座的特征部分的结构)
在此,详细说明本发明的特征的弧形构件40A、40B的位置。
参考图3,本实施方式的基座20中,弧形构件的正面41A、41B的全体面向晶圆W的背面。即,配合参考图2中的(C),凹部31A、31B全体及弧形构件40A、40B全体位于晶圆W的外周面正下方,而且位于比晶圆的边缘部靠内侧的位置。
将采用这种结构的技术意义与显示非现有例的比较例的图4对比来说明。图4中,弧形构件40A的表面是由位于座槽部21的周围的水平面46A、位于该水平面46A的内侧以线接触支持晶圆W的背面周缘部的晶圆支持面46B、从该晶圆支持面32A的内周端延续的纵壁面46C、从该纵壁面46C延续而构成座槽部21的底面的一部分的水平面46D所构成。即,弧形构件40A延伸到基座主体30的周缘部而且是比晶圆W的边缘部靠外侧的位置。因此,气相生长时,水平面46A及基座主体的正面外周部32都会接触到来源气体而生长出外延膜,有时存在其外延膜会在水平面46A与正面外周部32之间的水平方向分离部上连接的情况。之后,将弧形构件40A相对于基座主体30向上抬起时,在分离部上连接的外延膜断裂而产生粉尘。这些粉尘会附着于制造的外延晶圆的表面,产生许多缺陷。
相对于此,图3所示的本实施方式中,弧形构件40A、40B的全体位于晶圆W的外周部的正下方且比晶圆的边缘部更靠内侧的位置。因此,弧形构件40A、40B与基座主体30之间的水平方向分离部上不会产生外延膜,结果就不会发生因外延膜引起的粉尘。
实施例
(发明例)
使用图1~图3所示的基座及图6、图7所示的外延生长装置,根据上述的工序来制造了外延硅晶圆。图3中,设定晶圆的边缘与座槽部端部之间的间隙为1.25mm,凹部的外侧端部与晶圆的边缘之间的水平方向距离为2.25mm。作为外延晶圆的基板使用掺杂硼的直径300mm的硅晶圆。
(比较例)
除了使用图4所示的基座以外,与发明例相同地制造了外延硅晶圆。
(现有例)
使用图8所示的现有的外延生长装置制造了外延硅晶圆。
[气相生长条件]
外延硅晶圆的制造是将硅晶圆导入腔室内,用以先前说明的方法载置于基座上。接着,在氢气环境下以1150℃进行氢气烘烤。在1150℃下使硅晶圆的表面生长出4μm的硅外延膜,获得外延硅晶圆。在此,作为原料来源气体使用三氯氢硅气体,并且,掺杂气体会使用乙硼烷气体、作为载气使用氢气。之后,以先前说明的方法将外延硅晶圆往腔室外搬出。
[背面质量的评价]
对于以发明例及现有例制造出的外延晶圆,使用共焦点激光显微镜(倍率:1000倍)观察了与支持构件(现有例中为升降销、发明例中为弧形构件)的位置对称的背面区域。其结果如图9中的(A),图9中的(B)所示。从图9中的(A)明确可知,现有例中,观察到推测是由与升降销接触引起的多个损伤。对该视野中的所有损伤测定出深度(Peak-Vallay值)时,大多数损伤的深度超过0.5μm。相对于此,从图9中的(B)中明确可知,发明例中几乎观察不到瑕疵,测定该视野中观察到的几个凹凸的深度时,均为0.5μm以下。即,发明例中,完全没有观察到超过0.5μm的深度瑕疵。
并且,发明例的外延晶圆中,在其倒角部也没有观察到深度超过0.5μm的瑕疵。并且,使用所述激光显微镜观察发明例的外延晶圆的背面的中央部时,深度(Peak-Vallay值)0.3μm以下的瑕疵也没有观察到。由此,能够可靠地防止外延晶圆中央部中的滑移错位的发生。
并且,关于以发明例及比较例制造出的外延晶圆,使用表面检查装置(KLA-Tencor公司制:Surfscan SP-2),在DCO模式下观察对应到升降销的位置的背面区域,测定出具有激光反射的设定值以上的散乱强度的区域(销印强度),评价了外延晶圆的背面的升降销所引起的瑕疵。其结果确认到,比较例、发明例均为0mm2,外延晶圆的背面没有确认到来自升降销的瑕疵。
[外延晶圆的缺陷数的评价]
关于发明例及比较例中制造的各10片的外延晶圆,使用表面检查装置(KLA-Tencor公司制:Surfscan SP-2),在DCO模式(Dark Field Composite Oblique模式)观察外延膜表面,调查直径在0.25μm以上的LPD(Light Point Defect)的个数。通过该量测结果,能够评价粉尘的粒子产生状况。其结果,相对于比较例中的20.1个/晶圆(标准偏差9.1),发明例中减少为6.4个/晶圆(标准偏差3.7)。这显示了发明例能够抑制来自基座的粉尘。
产业上的可利用性
本发明的基座及外延生长装置,在晶圆的背面及倒角部不产生与升降销或基座接触而引起的深度瑕疵,且能够抑制来自基座的粉尘,因此能够良好地适用于外延晶圆的制造。
附图标记说明
100-外延生长装置,10-腔室,11-上部穹形盖,12-下部穹形盖,13-穹形盖安装体,14-加热灯,15-气体供给口,16-气体排出口,20-基座,21-座槽部,30-基座主体,31A、31B-凹部,32-基座主体的正面外周部,32A-晶圆支持面,32B-纵壁面,33-基座主体的正面中心部,34A、34B-凹部的底面,35-贯通孔,40A、40B-弧形构件,41A、41B-弧形构件的正面,42A、42B-弧形构件的背面,43A、43B-弧形构件的外周面,44-升降销,45A、45B-弧形构件的内周面,50-基座支持轴,52-主柱,54-臂部,56-贯通孔,58-支承销,60-升降轴,62-主柱,64-支柱,66-支柱的末端部,70-晶圆传送叶片,72-晶圆支持部,W-晶圆。
Claims (3)
1.一种基座,用于在外延生长装置内载置晶圆,其特征在于,
所述基座的正面形成有载置所述晶圆的座槽部,
所述基座具有基座主体、及分别载置于2个弧形的凹部的共计2个弧形构件、共计4根升降销,该2个弧形的凹部设置于该基座主体的正面的外周部,所述共计4根升降销固定于各弧形构件的两端部附近,支持各弧形构件的背面并升降各弧形构件,
所述座槽部的底面由所述弧形构件的正面的全体及所述基座主体的正面的一部分构成,
所述晶圆被载置于所述座槽部的状态下,所述座槽部的表面中的所述弧形构件的正面全体与所述基座主体的正面中心部与所述晶圆的背面有间隔地相对,
所述基座主体的所述凹部设置有用于插通所述4根升降销的4个的贯通孔,
将所述晶圆载置于所述座槽部时、及将所述晶圆从所述座槽部搬出时,被所述升降销提升的所述弧形构件的正面的全体会发挥支持面的功能,以仅与所述晶圆的背面的外周部面接触的方式支持。
2.根据权利要求1所述的基座,其特征在于,所述2个弧形构件从正面观察时位于线对称的位置。
3.一种外延生长装置,其特征在于,包括:
根据权利要求1或2所述的基座;及
升降机构,支持所述升降销的下端部来升降所述升降销。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2015-090563 | 2015-04-27 | ||
JP2015090563 | 2015-04-27 | ||
PCT/JP2016/002165 WO2016174860A1 (ja) | 2015-04-27 | 2016-04-22 | サセプタ、エピタキシャル成長装置、及びエピタキシャルウェーハ |
Publications (2)
Publication Number | Publication Date |
---|---|
CN107851560A CN107851560A (zh) | 2018-03-27 |
CN107851560B true CN107851560B (zh) | 2021-11-12 |
Family
ID=57198363
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201680024186.1A Active CN107851560B (zh) | 2015-04-27 | 2016-04-22 | 基座、外延生长装置、及外延晶圆 |
Country Status (6)
Country | Link |
---|---|
US (1) | US20180135172A1 (zh) |
JP (1) | JP6288371B2 (zh) |
KR (1) | KR102000676B1 (zh) |
CN (1) | CN107851560B (zh) |
TW (1) | TWI615917B (zh) |
WO (1) | WO2016174860A1 (zh) |
Families Citing this family (259)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9394608B2 (en) | 2009-04-06 | 2016-07-19 | Asm America, Inc. | Semiconductor processing reactor and components thereof |
US20130023129A1 (en) | 2011-07-20 | 2013-01-24 | Asm America, Inc. | Pressure transmitter for a semiconductor processing environment |
US10714315B2 (en) | 2012-10-12 | 2020-07-14 | Asm Ip Holdings B.V. | Semiconductor reaction chamber showerhead |
US20160376700A1 (en) | 2013-02-01 | 2016-12-29 | Asm Ip Holding B.V. | System for treatment of deposition reactor |
US11015245B2 (en) | 2014-03-19 | 2021-05-25 | Asm Ip Holding B.V. | Gas-phase reactor and system having exhaust plenum and components thereof |
US10858737B2 (en) | 2014-07-28 | 2020-12-08 | Asm Ip Holding B.V. | Showerhead assembly and components thereof |
US10941490B2 (en) | 2014-10-07 | 2021-03-09 | Asm Ip Holding B.V. | Multiple temperature range susceptor, assembly, reactor and system including the susceptor, and methods of using the same |
US10276355B2 (en) | 2015-03-12 | 2019-04-30 | Asm Ip Holding B.V. | Multi-zone reactor, system including the reactor, and method of using the same |
US10458018B2 (en) | 2015-06-26 | 2019-10-29 | Asm Ip Holding B.V. | Structures including metal carbide material, devices including the structures, and methods of forming same |
US10211308B2 (en) | 2015-10-21 | 2019-02-19 | Asm Ip Holding B.V. | NbMC layers |
US11139308B2 (en) | 2015-12-29 | 2021-10-05 | Asm Ip Holding B.V. | Atomic layer deposition of III-V compounds to form V-NAND devices |
US10529554B2 (en) | 2016-02-19 | 2020-01-07 | Asm Ip Holding B.V. | Method for forming silicon nitride film selectively on sidewalls or flat surfaces of trenches |
US10190213B2 (en) | 2016-04-21 | 2019-01-29 | Asm Ip Holding B.V. | Deposition of metal borides |
US10367080B2 (en) | 2016-05-02 | 2019-07-30 | Asm Ip Holding B.V. | Method of forming a germanium oxynitride film |
US11453943B2 (en) | 2016-05-25 | 2022-09-27 | Asm Ip Holding B.V. | Method for forming carbon-containing silicon/metal oxide or nitride film by ALD using silicon precursor and hydrocarbon precursor |
US10612137B2 (en) | 2016-07-08 | 2020-04-07 | Asm Ip Holdings B.V. | Organic reactants for atomic layer deposition |
US9859151B1 (en) | 2016-07-08 | 2018-01-02 | Asm Ip Holding B.V. | Selective film deposition method to form air gaps |
US9887082B1 (en) | 2016-07-28 | 2018-02-06 | Asm Ip Holding B.V. | Method and apparatus for filling a gap |
US9812320B1 (en) | 2016-07-28 | 2017-11-07 | Asm Ip Holding B.V. | Method and apparatus for filling a gap |
KR102532607B1 (ko) | 2016-07-28 | 2023-05-15 | 에이에스엠 아이피 홀딩 비.브이. | 기판 가공 장치 및 그 동작 방법 |
US10643826B2 (en) | 2016-10-26 | 2020-05-05 | Asm Ip Holdings B.V. | Methods for thermally calibrating reaction chambers |
US11532757B2 (en) | 2016-10-27 | 2022-12-20 | Asm Ip Holding B.V. | Deposition of charge trapping layers |
US10714350B2 (en) | 2016-11-01 | 2020-07-14 | ASM IP Holdings, B.V. | Methods for forming a transition metal niobium nitride film on a substrate by atomic layer deposition and related semiconductor device structures |
KR102546317B1 (ko) | 2016-11-15 | 2023-06-21 | 에이에스엠 아이피 홀딩 비.브이. | 기체 공급 유닛 및 이를 포함하는 기판 처리 장치 |
KR20180068582A (ko) | 2016-12-14 | 2018-06-22 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 |
US11447861B2 (en) | 2016-12-15 | 2022-09-20 | Asm Ip Holding B.V. | Sequential infiltration synthesis apparatus and a method of forming a patterned structure |
US11581186B2 (en) | 2016-12-15 | 2023-02-14 | Asm Ip Holding B.V. | Sequential infiltration synthesis apparatus |
KR102700194B1 (ko) | 2016-12-19 | 2024-08-28 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 |
US10269558B2 (en) | 2016-12-22 | 2019-04-23 | Asm Ip Holding B.V. | Method of forming a structure on a substrate |
US10867788B2 (en) | 2016-12-28 | 2020-12-15 | Asm Ip Holding B.V. | Method of forming a structure on a substrate |
US11390950B2 (en) | 2017-01-10 | 2022-07-19 | Asm Ip Holding B.V. | Reactor system and method to reduce residue buildup during a film deposition process |
DE112017006987B4 (de) | 2017-02-02 | 2022-09-08 | Sumco Corporation | Hebestift, Epitaxiewachstumsvorrichtung und Verfahren zur Herstellung von Siliziumepitaxiewafern unter Verwendung des Hebestiftes |
US10468261B2 (en) | 2017-02-15 | 2019-11-05 | Asm Ip Holding B.V. | Methods for forming a metallic film on a substrate by cyclical deposition and related semiconductor device structures |
CN206573826U (zh) * | 2017-03-23 | 2017-10-20 | 惠科股份有限公司 | 一种顶升装置及配向紫外线照射机 |
US10529563B2 (en) | 2017-03-29 | 2020-01-07 | Asm Ip Holdings B.V. | Method for forming doped metal oxide films on a substrate by cyclical deposition and related semiconductor device structures |
KR102457289B1 (ko) | 2017-04-25 | 2022-10-21 | 에이에스엠 아이피 홀딩 비.브이. | 박막 증착 방법 및 반도체 장치의 제조 방법 |
US10892156B2 (en) | 2017-05-08 | 2021-01-12 | Asm Ip Holding B.V. | Methods for forming a silicon nitride film on a substrate and related semiconductor device structures |
US10770286B2 (en) | 2017-05-08 | 2020-09-08 | Asm Ip Holdings B.V. | Methods for selectively forming a silicon nitride film on a substrate and related semiconductor device structures |
US10886123B2 (en) | 2017-06-02 | 2021-01-05 | Asm Ip Holding B.V. | Methods for forming low temperature semiconductor layers and related semiconductor device structures |
US12040200B2 (en) | 2017-06-20 | 2024-07-16 | Asm Ip Holding B.V. | Semiconductor processing apparatus and methods for calibrating a semiconductor processing apparatus |
US11306395B2 (en) | 2017-06-28 | 2022-04-19 | Asm Ip Holding B.V. | Methods for depositing a transition metal nitride film on a substrate by atomic layer deposition and related deposition apparatus |
KR20190009245A (ko) | 2017-07-18 | 2019-01-28 | 에이에스엠 아이피 홀딩 비.브이. | 반도체 소자 구조물 형성 방법 및 관련된 반도체 소자 구조물 |
US11018002B2 (en) | 2017-07-19 | 2021-05-25 | Asm Ip Holding B.V. | Method for selectively depositing a Group IV semiconductor and related semiconductor device structures |
US10541333B2 (en) | 2017-07-19 | 2020-01-21 | Asm Ip Holding B.V. | Method for depositing a group IV semiconductor and related semiconductor device structures |
US11374112B2 (en) | 2017-07-19 | 2022-06-28 | Asm Ip Holding B.V. | Method for depositing a group IV semiconductor and related semiconductor device structures |
US10590535B2 (en) | 2017-07-26 | 2020-03-17 | Asm Ip Holdings B.V. | Chemical treatment, deposition and/or infiltration apparatus and method for using the same |
CN109306467B (zh) * | 2017-07-26 | 2020-10-16 | 上海新昇半导体科技有限公司 | 气相生长装置及气相生长方法 |
US10692741B2 (en) | 2017-08-08 | 2020-06-23 | Asm Ip Holdings B.V. | Radiation shield |
US10770336B2 (en) * | 2017-08-08 | 2020-09-08 | Asm Ip Holding B.V. | Substrate lift mechanism and reactor including same |
US11139191B2 (en) | 2017-08-09 | 2021-10-05 | Asm Ip Holding B.V. | Storage apparatus for storing cassettes for substrates and processing apparatus equipped therewith |
US11769682B2 (en) | 2017-08-09 | 2023-09-26 | Asm Ip Holding B.V. | Storage apparatus for storing cassettes for substrates and processing apparatus equipped therewith |
US11830730B2 (en) | 2017-08-29 | 2023-11-28 | Asm Ip Holding B.V. | Layer forming method and apparatus |
US11056344B2 (en) | 2017-08-30 | 2021-07-06 | Asm Ip Holding B.V. | Layer forming method |
US11295980B2 (en) | 2017-08-30 | 2022-04-05 | Asm Ip Holding B.V. | Methods for depositing a molybdenum metal film over a dielectric surface of a substrate by a cyclical deposition process and related semiconductor device structures |
KR102491945B1 (ko) | 2017-08-30 | 2023-01-26 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 |
KR102401446B1 (ko) | 2017-08-31 | 2022-05-24 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 |
KR102630301B1 (ko) | 2017-09-21 | 2024-01-29 | 에이에스엠 아이피 홀딩 비.브이. | 침투성 재료의 순차 침투 합성 방법 처리 및 이를 이용하여 형성된 구조물 및 장치 |
US10844484B2 (en) | 2017-09-22 | 2020-11-24 | Asm Ip Holding B.V. | Apparatus for dispensing a vapor phase reactant to a reaction chamber and related methods |
US10658205B2 (en) | 2017-09-28 | 2020-05-19 | Asm Ip Holdings B.V. | Chemical dispensing apparatus and methods for dispensing a chemical to a reaction chamber |
US10403504B2 (en) | 2017-10-05 | 2019-09-03 | Asm Ip Holding B.V. | Method for selectively depositing a metallic film on a substrate |
US10923344B2 (en) | 2017-10-30 | 2021-02-16 | Asm Ip Holding B.V. | Methods for forming a semiconductor structure and related semiconductor structures |
US10910262B2 (en) | 2017-11-16 | 2021-02-02 | Asm Ip Holding B.V. | Method of selectively depositing a capping layer structure on a semiconductor device structure |
US11022879B2 (en) | 2017-11-24 | 2021-06-01 | Asm Ip Holding B.V. | Method of forming an enhanced unexposed photoresist layer |
JP7206265B2 (ja) | 2017-11-27 | 2023-01-17 | エーエスエム アイピー ホールディング ビー.ブイ. | クリーン・ミニエンバイロメントを備える装置 |
WO2019103613A1 (en) | 2017-11-27 | 2019-05-31 | Asm Ip Holding B.V. | A storage device for storing wafer cassettes for use with a batch furnace |
JP6493498B1 (ja) | 2017-12-01 | 2019-04-03 | 株式会社Sumco | 半導体ウェーハの載置位置測定方法および半導体エピタキシャルウェーハの製造方法 |
US10872771B2 (en) | 2018-01-16 | 2020-12-22 | Asm Ip Holding B. V. | Method for depositing a material film on a substrate within a reaction chamber by a cyclical deposition process and related device structures |
TWI799494B (zh) | 2018-01-19 | 2023-04-21 | 荷蘭商Asm 智慧財產控股公司 | 沈積方法 |
KR102695659B1 (ko) | 2018-01-19 | 2024-08-14 | 에이에스엠 아이피 홀딩 비.브이. | 플라즈마 보조 증착에 의해 갭 충진 층을 증착하는 방법 |
US11018047B2 (en) | 2018-01-25 | 2021-05-25 | Asm Ip Holding B.V. | Hybrid lift pin |
USD880437S1 (en) | 2018-02-01 | 2020-04-07 | Asm Ip Holding B.V. | Gas supply plate for semiconductor manufacturing apparatus |
US11081345B2 (en) | 2018-02-06 | 2021-08-03 | Asm Ip Holding B.V. | Method of post-deposition treatment for silicon oxide film |
WO2019158960A1 (en) | 2018-02-14 | 2019-08-22 | Asm Ip Holding B.V. | A method for depositing a ruthenium-containing film on a substrate by a cyclical deposition process |
US10896820B2 (en) | 2018-02-14 | 2021-01-19 | Asm Ip Holding B.V. | Method for depositing a ruthenium-containing film on a substrate by a cyclical deposition process |
KR102636427B1 (ko) | 2018-02-20 | 2024-02-13 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 방법 및 장치 |
US10975470B2 (en) | 2018-02-23 | 2021-04-13 | Asm Ip Holding B.V. | Apparatus for detecting or monitoring for a chemical precursor in a high temperature environment |
US11473195B2 (en) | 2018-03-01 | 2022-10-18 | Asm Ip Holding B.V. | Semiconductor processing apparatus and a method for processing a substrate |
US11629406B2 (en) | 2018-03-09 | 2023-04-18 | Asm Ip Holding B.V. | Semiconductor processing apparatus comprising one or more pyrometers for measuring a temperature of a substrate during transfer of the substrate |
US11114283B2 (en) | 2018-03-16 | 2021-09-07 | Asm Ip Holding B.V. | Reactor, system including the reactor, and methods of manufacturing and using same |
KR102646467B1 (ko) | 2018-03-27 | 2024-03-11 | 에이에스엠 아이피 홀딩 비.브이. | 기판 상에 전극을 형성하는 방법 및 전극을 포함하는 반도체 소자 구조 |
US11088002B2 (en) | 2018-03-29 | 2021-08-10 | Asm Ip Holding B.V. | Substrate rack and a substrate processing system and method |
US11230766B2 (en) | 2018-03-29 | 2022-01-25 | Asm Ip Holding B.V. | Substrate processing apparatus and method |
KR102501472B1 (ko) | 2018-03-30 | 2023-02-20 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 방법 |
TWI843623B (zh) | 2018-05-08 | 2024-05-21 | 荷蘭商Asm Ip私人控股有限公司 | 藉由循環沉積製程於基板上沉積氧化物膜之方法及相關裝置結構 |
US12025484B2 (en) | 2018-05-08 | 2024-07-02 | Asm Ip Holding B.V. | Thin film forming method |
TW202349473A (zh) | 2018-05-11 | 2023-12-16 | 荷蘭商Asm Ip私人控股有限公司 | 用於基板上形成摻雜金屬碳化物薄膜之方法及相關半導體元件結構 |
KR102596988B1 (ko) | 2018-05-28 | 2023-10-31 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 방법 및 그에 의해 제조된 장치 |
TWI840362B (zh) | 2018-06-04 | 2024-05-01 | 荷蘭商Asm Ip私人控股有限公司 | 水氣降低的晶圓處置腔室 |
US11718913B2 (en) | 2018-06-04 | 2023-08-08 | Asm Ip Holding B.V. | Gas distribution system and reactor system including same |
US11286562B2 (en) | 2018-06-08 | 2022-03-29 | Asm Ip Holding B.V. | Gas-phase chemical reactor and method of using same |
US10797133B2 (en) | 2018-06-21 | 2020-10-06 | Asm Ip Holding B.V. | Method for depositing a phosphorus doped silicon arsenide film and related semiconductor device structures |
KR102568797B1 (ko) | 2018-06-21 | 2023-08-21 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 시스템 |
TW202409324A (zh) | 2018-06-27 | 2024-03-01 | 荷蘭商Asm Ip私人控股有限公司 | 用於形成含金屬材料之循環沉積製程 |
US11499222B2 (en) | 2018-06-27 | 2022-11-15 | Asm Ip Holding B.V. | Cyclic deposition methods for forming metal-containing material and films and structures including the metal-containing material |
KR102686758B1 (ko) | 2018-06-29 | 2024-07-18 | 에이에스엠 아이피 홀딩 비.브이. | 박막 증착 방법 및 반도체 장치의 제조 방법 |
US10612136B2 (en) | 2018-06-29 | 2020-04-07 | ASM IP Holding, B.V. | Temperature-controlled flange and reactor system including same |
US10388513B1 (en) | 2018-07-03 | 2019-08-20 | Asm Ip Holding B.V. | Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition |
US10755922B2 (en) | 2018-07-03 | 2020-08-25 | Asm Ip Holding B.V. | Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition |
US11053591B2 (en) | 2018-08-06 | 2021-07-06 | Asm Ip Holding B.V. | Multi-port gas injection system and reactor system including same |
US10883175B2 (en) | 2018-08-09 | 2021-01-05 | Asm Ip Holding B.V. | Vertical furnace for processing substrates and a liner for use therein |
US11430674B2 (en) | 2018-08-22 | 2022-08-30 | Asm Ip Holding B.V. | Sensor array, apparatus for dispensing a vapor phase reactant to a reaction chamber and related methods |
JP7322365B2 (ja) * | 2018-09-06 | 2023-08-08 | 株式会社レゾナック | サセプタ及び化学気相成長装置 |
US11024523B2 (en) | 2018-09-11 | 2021-06-01 | Asm Ip Holding B.V. | Substrate processing apparatus and method |
TWI728456B (zh) | 2018-09-11 | 2021-05-21 | 荷蘭商Asm Ip私人控股有限公司 | 相對於基板的薄膜沉積方法 |
US11049751B2 (en) | 2018-09-14 | 2021-06-29 | Asm Ip Holding B.V. | Cassette supply system to store and handle cassettes and processing apparatus equipped therewith |
CN110970344A (zh) | 2018-10-01 | 2020-04-07 | Asm Ip控股有限公司 | 衬底保持设备、包含所述设备的系统及其使用方法 |
US11232963B2 (en) | 2018-10-03 | 2022-01-25 | Asm Ip Holding B.V. | Substrate processing apparatus and method |
KR102592699B1 (ko) | 2018-10-08 | 2023-10-23 | 에이에스엠 아이피 홀딩 비.브이. | 기판 지지 유닛 및 이를 포함하는 박막 증착 장치와 기판 처리 장치 |
KR102546322B1 (ko) | 2018-10-19 | 2023-06-21 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 및 기판 처리 방법 |
KR102605121B1 (ko) | 2018-10-19 | 2023-11-23 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 및 기판 처리 방법 |
USD948463S1 (en) | 2018-10-24 | 2022-04-12 | Asm Ip Holding B.V. | Susceptor for semiconductor substrate supporting apparatus |
US11087997B2 (en) | 2018-10-31 | 2021-08-10 | Asm Ip Holding B.V. | Substrate processing apparatus for processing substrates |
KR20200051105A (ko) | 2018-11-02 | 2020-05-13 | 에이에스엠 아이피 홀딩 비.브이. | 기판 지지 유닛 및 이를 포함하는 기판 처리 장치 |
US11572620B2 (en) | 2018-11-06 | 2023-02-07 | Asm Ip Holding B.V. | Methods for selectively depositing an amorphous silicon film on a substrate |
US11031242B2 (en) | 2018-11-07 | 2021-06-08 | Asm Ip Holding B.V. | Methods for depositing a boron doped silicon germanium film |
US10818758B2 (en) | 2018-11-16 | 2020-10-27 | Asm Ip Holding B.V. | Methods for forming a metal silicate film on a substrate in a reaction chamber and related semiconductor device structures |
US10847366B2 (en) | 2018-11-16 | 2020-11-24 | Asm Ip Holding B.V. | Methods for depositing a transition metal chalcogenide film on a substrate by a cyclical deposition process |
US12040199B2 (en) | 2018-11-28 | 2024-07-16 | Asm Ip Holding B.V. | Substrate processing apparatus for processing substrates |
US11217444B2 (en) | 2018-11-30 | 2022-01-04 | Asm Ip Holding B.V. | Method for forming an ultraviolet radiation responsive metal oxide-containing film |
KR102636428B1 (ko) | 2018-12-04 | 2024-02-13 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치를 세정하는 방법 |
US11158513B2 (en) | 2018-12-13 | 2021-10-26 | Asm Ip Holding B.V. | Methods for forming a rhenium-containing film on a substrate by a cyclical deposition process and related semiconductor device structures |
JP7504584B2 (ja) | 2018-12-14 | 2024-06-24 | エーエスエム・アイピー・ホールディング・ベー・フェー | 窒化ガリウムの選択的堆積を用いてデバイス構造体を形成する方法及びそのためのシステム |
CN109686684B (zh) * | 2018-12-27 | 2020-08-28 | 西安奕斯伟硅片技术有限公司 | 一种硅晶圆的加工方法、控制装置及外延反应设备 |
TWI819180B (zh) | 2019-01-17 | 2023-10-21 | 荷蘭商Asm 智慧財產控股公司 | 藉由循環沈積製程於基板上形成含過渡金屬膜之方法 |
KR20200091543A (ko) | 2019-01-22 | 2020-07-31 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 |
CN111524788B (zh) | 2019-02-01 | 2023-11-24 | Asm Ip私人控股有限公司 | 氧化硅的拓扑选择性膜形成的方法 |
TWI845607B (zh) | 2019-02-20 | 2024-06-21 | 荷蘭商Asm Ip私人控股有限公司 | 用來填充形成於基材表面內之凹部的循環沉積方法及設備 |
TW202044325A (zh) | 2019-02-20 | 2020-12-01 | 荷蘭商Asm Ip私人控股有限公司 | 填充一基板之一表面內所形成的一凹槽的方法、根據其所形成之半導體結構、及半導體處理設備 |
KR102626263B1 (ko) | 2019-02-20 | 2024-01-16 | 에이에스엠 아이피 홀딩 비.브이. | 처리 단계를 포함하는 주기적 증착 방법 및 이를 위한 장치 |
TWI838458B (zh) | 2019-02-20 | 2024-04-11 | 荷蘭商Asm Ip私人控股有限公司 | 用於3d nand應用中之插塞填充沉積之設備及方法 |
TWI842826B (zh) | 2019-02-22 | 2024-05-21 | 荷蘭商Asm Ip私人控股有限公司 | 基材處理設備及處理基材之方法 |
US11742198B2 (en) | 2019-03-08 | 2023-08-29 | Asm Ip Holding B.V. | Structure including SiOCN layer and method of forming same |
KR20200108243A (ko) | 2019-03-08 | 2020-09-17 | 에이에스엠 아이피 홀딩 비.브이. | SiOC 층을 포함한 구조체 및 이의 형성 방법 |
KR20200108242A (ko) | 2019-03-08 | 2020-09-17 | 에이에스엠 아이피 홀딩 비.브이. | 실리콘 질화물 층을 선택적으로 증착하는 방법, 및 선택적으로 증착된 실리콘 질화물 층을 포함하는 구조체 |
KR20200116033A (ko) | 2019-03-28 | 2020-10-08 | 에이에스엠 아이피 홀딩 비.브이. | 도어 개방기 및 이를 구비한 기판 처리 장치 |
KR20200116855A (ko) | 2019-04-01 | 2020-10-13 | 에이에스엠 아이피 홀딩 비.브이. | 반도체 소자를 제조하는 방법 |
KR20200123380A (ko) | 2019-04-19 | 2020-10-29 | 에이에스엠 아이피 홀딩 비.브이. | 층 형성 방법 및 장치 |
KR20200125453A (ko) | 2019-04-24 | 2020-11-04 | 에이에스엠 아이피 홀딩 비.브이. | 기상 반응기 시스템 및 이를 사용하는 방법 |
KR20200130121A (ko) | 2019-05-07 | 2020-11-18 | 에이에스엠 아이피 홀딩 비.브이. | 딥 튜브가 있는 화학물질 공급원 용기 |
KR20200130118A (ko) | 2019-05-07 | 2020-11-18 | 에이에스엠 아이피 홀딩 비.브이. | 비정질 탄소 중합체 막을 개질하는 방법 |
KR20200130652A (ko) | 2019-05-10 | 2020-11-19 | 에이에스엠 아이피 홀딩 비.브이. | 표면 상에 재료를 증착하는 방법 및 본 방법에 따라 형성된 구조 |
JP2020188254A (ja) | 2019-05-16 | 2020-11-19 | エーエスエム アイピー ホールディング ビー.ブイ. | ウェハボートハンドリング装置、縦型バッチ炉および方法 |
JP2020188255A (ja) | 2019-05-16 | 2020-11-19 | エーエスエム アイピー ホールディング ビー.ブイ. | ウェハボートハンドリング装置、縦型バッチ炉および方法 |
USD975665S1 (en) | 2019-05-17 | 2023-01-17 | Asm Ip Holding B.V. | Susceptor shaft |
USD947913S1 (en) | 2019-05-17 | 2022-04-05 | Asm Ip Holding B.V. | Susceptor shaft |
USD935572S1 (en) | 2019-05-24 | 2021-11-09 | Asm Ip Holding B.V. | Gas channel plate |
USD922229S1 (en) | 2019-06-05 | 2021-06-15 | Asm Ip Holding B.V. | Device for controlling a temperature of a gas supply unit |
KR20200141002A (ko) | 2019-06-06 | 2020-12-17 | 에이에스엠 아이피 홀딩 비.브이. | 배기 가스 분석을 포함한 기상 반응기 시스템을 사용하는 방법 |
KR20200143254A (ko) | 2019-06-11 | 2020-12-23 | 에이에스엠 아이피 홀딩 비.브이. | 개질 가스를 사용하여 전자 구조를 형성하는 방법, 상기 방법을 수행하기 위한 시스템, 및 상기 방법을 사용하여 형성되는 구조 |
USD944946S1 (en) | 2019-06-14 | 2022-03-01 | Asm Ip Holding B.V. | Shower plate |
USD931978S1 (en) | 2019-06-27 | 2021-09-28 | Asm Ip Holding B.V. | Showerhead vacuum transport |
KR20210005515A (ko) | 2019-07-03 | 2021-01-14 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치용 온도 제어 조립체 및 이를 사용하는 방법 |
JP7499079B2 (ja) | 2019-07-09 | 2024-06-13 | エーエスエム・アイピー・ホールディング・ベー・フェー | 同軸導波管を用いたプラズマ装置、基板処理方法 |
CN112216646A (zh) | 2019-07-10 | 2021-01-12 | Asm Ip私人控股有限公司 | 基板支撑组件及包括其的基板处理装置 |
KR20210010307A (ko) | 2019-07-16 | 2021-01-27 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 |
KR20210010820A (ko) | 2019-07-17 | 2021-01-28 | 에이에스엠 아이피 홀딩 비.브이. | 실리콘 게르마늄 구조를 형성하는 방법 |
KR20210010816A (ko) | 2019-07-17 | 2021-01-28 | 에이에스엠 아이피 홀딩 비.브이. | 라디칼 보조 점화 플라즈마 시스템 및 방법 |
US11643724B2 (en) | 2019-07-18 | 2023-05-09 | Asm Ip Holding B.V. | Method of forming structures using a neutral beam |
TWI839544B (zh) | 2019-07-19 | 2024-04-21 | 荷蘭商Asm Ip私人控股有限公司 | 形成形貌受控的非晶碳聚合物膜之方法 |
CN112309843A (zh) | 2019-07-29 | 2021-02-02 | Asm Ip私人控股有限公司 | 实现高掺杂剂掺入的选择性沉积方法 |
CN112309900A (zh) | 2019-07-30 | 2021-02-02 | Asm Ip私人控股有限公司 | 基板处理设备 |
CN112309899A (zh) | 2019-07-30 | 2021-02-02 | Asm Ip私人控股有限公司 | 基板处理设备 |
US11587814B2 (en) | 2019-07-31 | 2023-02-21 | Asm Ip Holding B.V. | Vertical batch furnace assembly |
US11587815B2 (en) | 2019-07-31 | 2023-02-21 | Asm Ip Holding B.V. | Vertical batch furnace assembly |
US11227782B2 (en) | 2019-07-31 | 2022-01-18 | Asm Ip Holding B.V. | Vertical batch furnace assembly |
CN118422165A (zh) | 2019-08-05 | 2024-08-02 | Asm Ip私人控股有限公司 | 用于化学源容器的液位传感器 |
USD965044S1 (en) | 2019-08-19 | 2022-09-27 | Asm Ip Holding B.V. | Susceptor shaft |
USD965524S1 (en) | 2019-08-19 | 2022-10-04 | Asm Ip Holding B.V. | Susceptor support |
JP2021031769A (ja) | 2019-08-21 | 2021-03-01 | エーエスエム アイピー ホールディング ビー.ブイ. | 成膜原料混合ガス生成装置及び成膜装置 |
KR20210024423A (ko) | 2019-08-22 | 2021-03-05 | 에이에스엠 아이피 홀딩 비.브이. | 홀을 구비한 구조체를 형성하기 위한 방법 |
USD949319S1 (en) | 2019-08-22 | 2022-04-19 | Asm Ip Holding B.V. | Exhaust duct |
USD930782S1 (en) | 2019-08-22 | 2021-09-14 | Asm Ip Holding B.V. | Gas distributor |
USD979506S1 (en) | 2019-08-22 | 2023-02-28 | Asm Ip Holding B.V. | Insulator |
USD940837S1 (en) | 2019-08-22 | 2022-01-11 | Asm Ip Holding B.V. | Electrode |
KR20210024420A (ko) | 2019-08-23 | 2021-03-05 | 에이에스엠 아이피 홀딩 비.브이. | 비스(디에틸아미노)실란을 사용하여 peald에 의해 개선된 품질을 갖는 실리콘 산화물 막을 증착하기 위한 방법 |
US11286558B2 (en) | 2019-08-23 | 2022-03-29 | Asm Ip Holding B.V. | Methods for depositing a molybdenum nitride film on a surface of a substrate by a cyclical deposition process and related semiconductor device structures including a molybdenum nitride film |
KR20210029090A (ko) | 2019-09-04 | 2021-03-15 | 에이에스엠 아이피 홀딩 비.브이. | 희생 캡핑 층을 이용한 선택적 증착 방법 |
KR20210029663A (ko) | 2019-09-05 | 2021-03-16 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 |
US11562901B2 (en) | 2019-09-25 | 2023-01-24 | Asm Ip Holding B.V. | Substrate processing method |
CN112593212B (zh) | 2019-10-02 | 2023-12-22 | Asm Ip私人控股有限公司 | 通过循环等离子体增强沉积工艺形成拓扑选择性氧化硅膜的方法 |
CN112635282A (zh) | 2019-10-08 | 2021-04-09 | Asm Ip私人控股有限公司 | 具有连接板的基板处理装置、基板处理方法 |
KR20210042810A (ko) | 2019-10-08 | 2021-04-20 | 에이에스엠 아이피 홀딩 비.브이. | 활성 종을 이용하기 위한 가스 분배 어셈블리를 포함한 반응기 시스템 및 이를 사용하는 방법 |
KR20210043460A (ko) | 2019-10-10 | 2021-04-21 | 에이에스엠 아이피 홀딩 비.브이. | 포토레지스트 하부층을 형성하기 위한 방법 및 이를 포함한 구조체 |
US12009241B2 (en) | 2019-10-14 | 2024-06-11 | Asm Ip Holding B.V. | Vertical batch furnace assembly with detector to detect cassette |
TWI834919B (zh) | 2019-10-16 | 2024-03-11 | 荷蘭商Asm Ip私人控股有限公司 | 氧化矽之拓撲選擇性膜形成之方法 |
US11637014B2 (en) | 2019-10-17 | 2023-04-25 | Asm Ip Holding B.V. | Methods for selective deposition of doped semiconductor material |
KR20210047808A (ko) | 2019-10-21 | 2021-04-30 | 에이에스엠 아이피 홀딩 비.브이. | 막을 선택적으로 에칭하기 위한 장치 및 방법 |
KR20210050453A (ko) | 2019-10-25 | 2021-05-07 | 에이에스엠 아이피 홀딩 비.브이. | 기판 표면 상의 갭 피처를 충진하는 방법 및 이와 관련된 반도체 소자 구조 |
CN112708871A (zh) * | 2019-10-25 | 2021-04-27 | 联芯集成电路制造(厦门)有限公司 | 使用于沉积室的载环 |
US11646205B2 (en) | 2019-10-29 | 2023-05-09 | Asm Ip Holding B.V. | Methods of selectively forming n-type doped material on a surface, systems for selectively forming n-type doped material, and structures formed using same |
KR20210054983A (ko) | 2019-11-05 | 2021-05-14 | 에이에스엠 아이피 홀딩 비.브이. | 도핑된 반도체 층을 갖는 구조체 및 이를 형성하기 위한 방법 및 시스템 |
US11501968B2 (en) | 2019-11-15 | 2022-11-15 | Asm Ip Holding B.V. | Method for providing a semiconductor device with silicon filled gaps |
KR20210062561A (ko) | 2019-11-20 | 2021-05-31 | 에이에스엠 아이피 홀딩 비.브이. | 기판의 표면 상에 탄소 함유 물질을 증착하는 방법, 상기 방법을 사용하여 형성된 구조물, 및 상기 구조물을 형성하기 위한 시스템 |
CN112951697A (zh) | 2019-11-26 | 2021-06-11 | Asm Ip私人控股有限公司 | 基板处理设备 |
KR20210065848A (ko) | 2019-11-26 | 2021-06-04 | 에이에스엠 아이피 홀딩 비.브이. | 제1 유전체 표면과 제2 금속성 표면을 포함한 기판 상에 타겟 막을 선택적으로 형성하기 위한 방법 |
CN112885693A (zh) | 2019-11-29 | 2021-06-01 | Asm Ip私人控股有限公司 | 基板处理设备 |
CN112885692A (zh) | 2019-11-29 | 2021-06-01 | Asm Ip私人控股有限公司 | 基板处理设备 |
JP7527928B2 (ja) | 2019-12-02 | 2024-08-05 | エーエスエム・アイピー・ホールディング・ベー・フェー | 基板処理装置、基板処理方法 |
KR20210070898A (ko) | 2019-12-04 | 2021-06-15 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 |
TW202125596A (zh) | 2019-12-17 | 2021-07-01 | 荷蘭商Asm Ip私人控股有限公司 | 形成氮化釩層之方法以及包括該氮化釩層之結構 |
KR20210080214A (ko) | 2019-12-19 | 2021-06-30 | 에이에스엠 아이피 홀딩 비.브이. | 기판 상의 갭 피처를 충진하는 방법 및 이와 관련된 반도체 소자 구조 |
TW202140135A (zh) | 2020-01-06 | 2021-11-01 | 荷蘭商Asm Ip私人控股有限公司 | 氣體供應總成以及閥板總成 |
JP2021111783A (ja) | 2020-01-06 | 2021-08-02 | エーエスエム・アイピー・ホールディング・ベー・フェー | チャネル付きリフトピン |
US11993847B2 (en) | 2020-01-08 | 2024-05-28 | Asm Ip Holding B.V. | Injector |
KR102675856B1 (ko) | 2020-01-20 | 2024-06-17 | 에이에스엠 아이피 홀딩 비.브이. | 박막 형성 방법 및 박막 표면 개질 방법 |
TW202130846A (zh) | 2020-02-03 | 2021-08-16 | 荷蘭商Asm Ip私人控股有限公司 | 形成包括釩或銦層的結構之方法 |
TW202146882A (zh) | 2020-02-04 | 2021-12-16 | 荷蘭商Asm Ip私人控股有限公司 | 驗證一物品之方法、用於驗證一物品之設備、及用於驗證一反應室之系統 |
US11776846B2 (en) | 2020-02-07 | 2023-10-03 | Asm Ip Holding B.V. | Methods for depositing gap filling fluids and related systems and devices |
US11781243B2 (en) | 2020-02-17 | 2023-10-10 | Asm Ip Holding B.V. | Method for depositing low temperature phosphorous-doped silicon |
TW202203344A (zh) | 2020-02-28 | 2022-01-16 | 荷蘭商Asm Ip控股公司 | 專用於零件清潔的系統 |
KR20210116240A (ko) | 2020-03-11 | 2021-09-27 | 에이에스엠 아이피 홀딩 비.브이. | 조절성 접합부를 갖는 기판 핸들링 장치 |
KR20210116249A (ko) | 2020-03-11 | 2021-09-27 | 에이에스엠 아이피 홀딩 비.브이. | 록아웃 태그아웃 어셈블리 및 시스템 그리고 이의 사용 방법 |
CN113394086A (zh) | 2020-03-12 | 2021-09-14 | Asm Ip私人控股有限公司 | 用于制造具有目标拓扑轮廓的层结构的方法 |
KR20210124042A (ko) | 2020-04-02 | 2021-10-14 | 에이에스엠 아이피 홀딩 비.브이. | 박막 형성 방법 |
TW202146689A (zh) | 2020-04-03 | 2021-12-16 | 荷蘭商Asm Ip控股公司 | 阻障層形成方法及半導體裝置的製造方法 |
TW202145344A (zh) | 2020-04-08 | 2021-12-01 | 荷蘭商Asm Ip私人控股有限公司 | 用於選擇性蝕刻氧化矽膜之設備及方法 |
KR20210128343A (ko) | 2020-04-15 | 2021-10-26 | 에이에스엠 아이피 홀딩 비.브이. | 크롬 나이트라이드 층을 형성하는 방법 및 크롬 나이트라이드 층을 포함하는 구조 |
US11821078B2 (en) | 2020-04-15 | 2023-11-21 | Asm Ip Holding B.V. | Method for forming precoat film and method for forming silicon-containing film |
US11996289B2 (en) | 2020-04-16 | 2024-05-28 | Asm Ip Holding B.V. | Methods of forming structures including silicon germanium and silicon layers, devices formed using the methods, and systems for performing the methods |
KR20210132600A (ko) | 2020-04-24 | 2021-11-04 | 에이에스엠 아이피 홀딩 비.브이. | 바나듐, 질소 및 추가 원소를 포함한 층을 증착하기 위한 방법 및 시스템 |
KR20210132576A (ko) | 2020-04-24 | 2021-11-04 | 에이에스엠 아이피 홀딩 비.브이. | 바나듐 나이트라이드 함유 층을 형성하는 방법 및 이를 포함하는 구조 |
TW202146831A (zh) | 2020-04-24 | 2021-12-16 | 荷蘭商Asm Ip私人控股有限公司 | 垂直批式熔爐總成、及用於冷卻垂直批式熔爐之方法 |
KR20210134226A (ko) | 2020-04-29 | 2021-11-09 | 에이에스엠 아이피 홀딩 비.브이. | 고체 소스 전구체 용기 |
KR20210134869A (ko) | 2020-05-01 | 2021-11-11 | 에이에스엠 아이피 홀딩 비.브이. | Foup 핸들러를 이용한 foup의 빠른 교환 |
JP2021177545A (ja) | 2020-05-04 | 2021-11-11 | エーエスエム・アイピー・ホールディング・ベー・フェー | 基板を処理するための基板処理システム |
US11598005B2 (en) * | 2020-05-07 | 2023-03-07 | Sandisk Technologies Llc | Deposition apparatus including an off-axis lift-and-rotation unit and methods for operating the same |
KR20210141379A (ko) | 2020-05-13 | 2021-11-23 | 에이에스엠 아이피 홀딩 비.브이. | 반응기 시스템용 레이저 정렬 고정구 |
TW202146699A (zh) | 2020-05-15 | 2021-12-16 | 荷蘭商Asm Ip私人控股有限公司 | 形成矽鍺層之方法、半導體結構、半導體裝置、形成沉積層之方法、及沉積系統 |
TW202147383A (zh) | 2020-05-19 | 2021-12-16 | 荷蘭商Asm Ip私人控股有限公司 | 基材處理設備 |
KR20210145078A (ko) | 2020-05-21 | 2021-12-01 | 에이에스엠 아이피 홀딩 비.브이. | 다수의 탄소 층을 포함한 구조체 및 이를 형성하고 사용하는 방법 |
TW202200837A (zh) | 2020-05-22 | 2022-01-01 | 荷蘭商Asm Ip私人控股有限公司 | 用於在基材上形成薄膜之反應系統 |
TW202201602A (zh) | 2020-05-29 | 2022-01-01 | 荷蘭商Asm Ip私人控股有限公司 | 基板處理方法 |
TW202218133A (zh) | 2020-06-24 | 2022-05-01 | 荷蘭商Asm Ip私人控股有限公司 | 形成含矽層之方法 |
TW202217953A (zh) | 2020-06-30 | 2022-05-01 | 荷蘭商Asm Ip私人控股有限公司 | 基板處理方法 |
TW202202649A (zh) | 2020-07-08 | 2022-01-16 | 荷蘭商Asm Ip私人控股有限公司 | 基板處理方法 |
KR20220010438A (ko) | 2020-07-17 | 2022-01-25 | 에이에스엠 아이피 홀딩 비.브이. | 포토리소그래피에 사용하기 위한 구조체 및 방법 |
TW202204662A (zh) | 2020-07-20 | 2022-02-01 | 荷蘭商Asm Ip私人控股有限公司 | 用於沉積鉬層之方法及系統 |
US12040177B2 (en) | 2020-08-18 | 2024-07-16 | Asm Ip Holding B.V. | Methods for forming a laminate film by cyclical plasma-enhanced deposition processes |
KR20220027026A (ko) | 2020-08-26 | 2022-03-07 | 에이에스엠 아이피 홀딩 비.브이. | 금속 실리콘 산화물 및 금속 실리콘 산질화물 층을 형성하기 위한 방법 및 시스템 |
TW202229601A (zh) | 2020-08-27 | 2022-08-01 | 荷蘭商Asm Ip私人控股有限公司 | 形成圖案化結構的方法、操控機械特性的方法、裝置結構、及基板處理系統 |
USD990534S1 (en) | 2020-09-11 | 2023-06-27 | Asm Ip Holding B.V. | Weighted lift pin |
JP7063493B2 (ja) * | 2020-09-14 | 2022-05-09 | 株式会社 天谷製作所 | 成膜用冶具及び気相成長装置 |
USD1012873S1 (en) | 2020-09-24 | 2024-01-30 | Asm Ip Holding B.V. | Electrode for semiconductor processing apparatus |
US12009224B2 (en) | 2020-09-29 | 2024-06-11 | Asm Ip Holding B.V. | Apparatus and method for etching metal nitrides |
CN114293174A (zh) | 2020-10-07 | 2022-04-08 | Asm Ip私人控股有限公司 | 气体供应单元和包括气体供应单元的衬底处理设备 |
TW202229613A (zh) | 2020-10-14 | 2022-08-01 | 荷蘭商Asm Ip私人控股有限公司 | 於階梯式結構上沉積材料的方法 |
TW202217037A (zh) | 2020-10-22 | 2022-05-01 | 荷蘭商Asm Ip私人控股有限公司 | 沉積釩金屬的方法、結構、裝置及沉積總成 |
TW202223136A (zh) | 2020-10-28 | 2022-06-16 | 荷蘭商Asm Ip私人控股有限公司 | 用於在基板上形成層之方法、及半導體處理系統 |
TW202235649A (zh) | 2020-11-24 | 2022-09-16 | 荷蘭商Asm Ip私人控股有限公司 | 填充間隙之方法與相關之系統及裝置 |
KR20220076343A (ko) | 2020-11-30 | 2022-06-08 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치의 반응 챔버 내에 배열되도록 구성된 인젝터 |
US11946137B2 (en) | 2020-12-16 | 2024-04-02 | Asm Ip Holding B.V. | Runout and wobble measurement fixtures |
TW202231903A (zh) | 2020-12-22 | 2022-08-16 | 荷蘭商Asm Ip私人控股有限公司 | 過渡金屬沉積方法、過渡金屬層、用於沉積過渡金屬於基板上的沉積總成 |
USD980814S1 (en) | 2021-05-11 | 2023-03-14 | Asm Ip Holding B.V. | Gas distributor for substrate processing apparatus |
USD1023959S1 (en) | 2021-05-11 | 2024-04-23 | Asm Ip Holding B.V. | Electrode for substrate processing apparatus |
USD981973S1 (en) | 2021-05-11 | 2023-03-28 | Asm Ip Holding B.V. | Reactor wall for substrate processing apparatus |
USD980813S1 (en) | 2021-05-11 | 2023-03-14 | Asm Ip Holding B.V. | Gas flow control plate for substrate processing apparatus |
USD990441S1 (en) | 2021-09-07 | 2023-06-27 | Asm Ip Holding B.V. | Gas flow control plate |
CN114986360A (zh) * | 2022-04-21 | 2022-09-02 | 上海新昇半导体科技有限公司 | 一种抛光设备基座及抛光机 |
JP2024030041A (ja) | 2022-08-23 | 2024-03-07 | ユナイテッド・セミコンダクター・ジャパン株式会社 | ウェーハ支持板及びそれを備えた半導体製造装置 |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3333020B2 (ja) * | 1993-10-29 | 2002-10-07 | 東京エレクトロン株式会社 | 処理方法及び処理装置 |
JPH08316222A (ja) * | 1995-05-19 | 1996-11-29 | Tokyo Electron Ltd | 熱処理方法及びその装置 |
US6318957B1 (en) * | 1998-07-10 | 2001-11-20 | Asm America, Inc. | Method for handling of wafers with minimal contact |
JP3234576B2 (ja) * | 1998-10-30 | 2001-12-04 | アプライド マテリアルズ インコーポレイテッド | 半導体製造装置におけるウェハ支持装置 |
JP2001313329A (ja) | 2000-04-28 | 2001-11-09 | Applied Materials Inc | 半導体製造装置におけるウェハ支持装置 |
FR2832995B1 (fr) * | 2001-12-04 | 2004-02-27 | Thales Sa | Procede de croissance catalytique de nanotubes ou nanofibres comprenant une barriere de diffusion de type alliage nisi |
JP2003197532A (ja) * | 2001-12-21 | 2003-07-11 | Sumitomo Mitsubishi Silicon Corp | エピタキシャル成長方法及びエピタキシャル成長用サセプター |
JP2004063865A (ja) * | 2002-07-30 | 2004-02-26 | Shin Etsu Handotai Co Ltd | サセプタ、気相成長装置およびエピタキシャルウェーハの製造方法 |
JP4016823B2 (ja) * | 2002-12-06 | 2007-12-05 | 信越半導体株式会社 | シリコンエピタキシャルウェーハの製造方法 |
JP2005101161A (ja) * | 2003-09-24 | 2005-04-14 | Hitachi Kokusai Electric Inc | 熱処理用支持具、熱処理装置、熱処理方法、基板の製造方法及び半導体装置の製造方法 |
JP2005197380A (ja) * | 2004-01-06 | 2005-07-21 | Sumitomo Mitsubishi Silicon Corp | ウェーハ支持装置 |
JP2005235906A (ja) * | 2004-02-18 | 2005-09-02 | Shin Etsu Handotai Co Ltd | ウェーハ保持具及び気相成長装置 |
JP5412759B2 (ja) * | 2008-07-31 | 2014-02-12 | 株式会社Sumco | エピタキシャルウェーハの保持具及びそのウェーハの製造方法 |
JP2010074037A (ja) * | 2008-09-22 | 2010-04-02 | Nuflare Technology Inc | サセプタ、半導体製造装置および半導体製造方法 |
JP2011146506A (ja) * | 2010-01-14 | 2011-07-28 | Sumco Corp | 気相成長装置用サセプタ及び気相成長装置 |
-
2016
- 2016-03-31 TW TW105110249A patent/TWI615917B/zh active
- 2016-04-22 WO PCT/JP2016/002165 patent/WO2016174860A1/ja active Application Filing
- 2016-04-22 CN CN201680024186.1A patent/CN107851560B/zh active Active
- 2016-04-22 US US15/567,159 patent/US20180135172A1/en not_active Abandoned
- 2016-04-22 JP JP2017515386A patent/JP6288371B2/ja active Active
- 2016-04-22 KR KR1020177029628A patent/KR102000676B1/ko active IP Right Grant
Also Published As
Publication number | Publication date |
---|---|
JP6288371B2 (ja) | 2018-03-07 |
KR102000676B1 (ko) | 2019-07-16 |
KR20170122277A (ko) | 2017-11-03 |
TWI615917B (zh) | 2018-02-21 |
TW201703184A (zh) | 2017-01-16 |
JPWO2016174860A1 (ja) | 2017-09-07 |
WO2016174860A1 (ja) | 2016-11-03 |
CN107851560A (zh) | 2018-03-27 |
US20180135172A1 (en) | 2018-05-17 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN107851560B (zh) | 基座、外延生长装置、及外延晶圆 | |
CN107851561B (zh) | 基座及外延生长装置 | |
CN107924821B (zh) | 外延成长装置、外延晶片的制造方法以及外延成长装置用顶升销 | |
US6596086B1 (en) | Apparatus for thin film growth | |
EP1670044A1 (en) | Production method for silicon epitaxial wafer, and silicon epitaxial wafer | |
JP3092801B2 (ja) | 薄膜成長装置 | |
US20110073037A1 (en) | Epitaxial growth susceptor | |
TWI435377B (zh) | Epitaxial silicon wafers and their manufacturing methods | |
JP6968670B2 (ja) | サセプタ、エピタキシャルウェーハの製造方法 | |
JP2016092129A (ja) | リフトピン、該リフトピンを用いたエピタキシャル成長装置およびエピタキシャルウェーハの製造方法 | |
JP6428358B2 (ja) | エピタキシャル成長装置及びサセプタサポートシャフト | |
JP2000103696A (ja) | シリコンエピタキシャルウェ―ハおよびその製造方法 | |
JP2016092130A (ja) | リフトピン、該リフトピンを用いたエピタキシャル成長装置およびエピタキシャルウェーハの製造方法 | |
JP2018022724A (ja) | サセプタサポートシャフト及びエピタキシャル成長装置 | |
JP6844529B2 (ja) | エピタキシャルウェーハの製造方法およびエピタキシャルウェーハ | |
JP6878212B2 (ja) | サセプタ、cvd装置及びエピタキシャルウェハの製造方法 | |
JP2013191889A (ja) | シリコンエピタキシャルウェーハ | |
JP2005235906A (ja) | ウェーハ保持具及び気相成長装置 | |
JP6149796B2 (ja) | エピタキシャル成長装置 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
GR01 | Patent grant | ||
GR01 | Patent grant |