JP6968670B2 - サセプタ、エピタキシャルウェーハの製造方法 - Google Patents
サセプタ、エピタキシャルウェーハの製造方法 Download PDFInfo
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- JP6968670B2 JP6968670B2 JP2017221829A JP2017221829A JP6968670B2 JP 6968670 B2 JP6968670 B2 JP 6968670B2 JP 2017221829 A JP2017221829 A JP 2017221829A JP 2017221829 A JP2017221829 A JP 2017221829A JP 6968670 B2 JP6968670 B2 JP 6968670B2
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68735—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge profile or support profile
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/24—Deposition of silicon only
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/12—Substrate holders or susceptors
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67115—Apparatus for thermal treatment mainly by radiation
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- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Metallurgy (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Mechanical Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Chemical Vapour Deposition (AREA)
Description
前記サセプタの上面に前記ウェーハを載置するための凹形状のザグリが形成されており、
前記ザグリは、前記ウェーハの外周部が接触して支持される外周支持部と、前記外周支持部の内側に位置して前記ウェーハと接触しない中央部とを有しており、
前記外周支持部は、前記中央部に向けて水平方向に対して6°以上9°以下の角度で下がるように傾斜していることを特徴とする。
以下、本発明の第1実施形態を説明する。先ず、図1を参照してエピタキシャルウェーハ製造装置を説明する。図1の枚葉式のエピタキシャルウェーハ製造装置1は、1枚のシリコン単結晶基板W(以下ウェーハWという)に対してその表面上にシリコン単結晶膜を気相成長させる装置である。
次に、本発明の第2実施形態を上記第1実施形態と異なる部分を中心に説明する。本実施形態ではサセプタの構造が第1実施形態と異なっており、それ以外は第1実施形態と同じである。
外周支持部の傾斜角が6°、9°のサセプタを用いた場合の影響度はそれぞれ42%、18%であった。また、エピタキシャルウェーハの外周部にはスリップ転位は発生しなかった。
外周支持部の傾斜角が1°、3°、5°のサセプタを用いた場合の影響度はそれぞれ98%、78%、52%であった。また、エピタキシャルウェーハの外周部にはスリップ転位は発生しなかった。
外周支持部の傾斜角が10°のサセプタを用いた場合の影響度は17%であったが、エピタキシャルウェーハの外周部にスリップ転位が発生した。
3 サセプタ
31 ザグリ
310 ザグリの側壁部
311 ザグリの外周支持部
312 ザグリの中央部
313 ザグリの段差部
314 ザグリの非接触外周部
33 サセプタ上面
Claims (2)
- ウェーハの表面上にエピタキシャル膜を気相成長させてエピタキシャルウェーハを製造する際に前記ウェーハを載置させるサセプタであって、
前記サセプタの上面に前記ウェーハを載置するための凹形状のザグリが形成されており、
前記ザグリは、前記ウェーハの外周部が接触して支持される外周支持部と、前記外周支持部の内側に位置して前記ウェーハと接触しない中央部とを有しており、
前記外周支持部は、前記中央部に向けて水平方向に対して6°以上9°以下の角度で下がるように傾斜しており、
前記外周支持部が、前記サセプタの周方向における全周に設けられており、
前記ザグリは、
前記サセプタの上面と前記外周支持部の外周縁との間に前記上面に直角な段差を形成する側壁部と、
前記外周支持部の内周縁と前記中央部の外周縁との間に、前記サセプタの上面に対して直角に設けられる段差部とを有し、
前記ウェーハの直径は300mmであり、
前記サセプタの中心を通り前記サセプタの上面に直角な平面で前記サセプタを切った断面で見て、前記外周支持部の水平方向における寸法が5mm以下であり、
前記中央部は水平面を形成するように設けられ、
前記サセプタの上面に対する前記中央部の深さは0.8mm〜1.8mmであることを特徴とするサセプタ。 - 請求項1に記載のサセプタにウェーハを載置して、そのウェーハの表面上にエピタキシャル膜を気相成長させることを特徴とするエピタキシャルウェーハの製造方法。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
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JP2017221829A JP6968670B2 (ja) | 2017-11-17 | 2017-11-17 | サセプタ、エピタキシャルウェーハの製造方法 |
PCT/JP2018/040654 WO2019098033A1 (ja) | 2017-11-17 | 2018-11-01 | サセプタ、エピタキシャルウェーハの製造方法 |
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JP2017221829A JP6968670B2 (ja) | 2017-11-17 | 2017-11-17 | サセプタ、エピタキシャルウェーハの製造方法 |
Publications (2)
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JP2019096639A JP2019096639A (ja) | 2019-06-20 |
JP6968670B2 true JP6968670B2 (ja) | 2021-11-17 |
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JP (1) | JP6968670B2 (ja) |
WO (1) | WO2019098033A1 (ja) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
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JP7326119B2 (ja) * | 2019-11-07 | 2023-08-15 | 株式会社アルバック | 基板ステージ及び真空処理装置 |
EP3957776A1 (de) | 2020-08-17 | 2022-02-23 | Siltronic AG | Verfahren zum abscheiden einer epitaktischen schicht auf einer substratscheibe |
CN114540948B (zh) * | 2022-02-17 | 2023-02-14 | 北京北方华创微电子装备有限公司 | 半导体工艺设备中的基座及半导体工艺设备 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2971818B2 (ja) * | 1996-09-24 | 1999-11-08 | イートン コーポレーション | ウエハー熱処理装置 |
US6026589A (en) * | 1998-02-02 | 2000-02-22 | Silicon Valley Group, Thermal Systems Llc | Wafer carrier and semiconductor apparatus for processing a semiconductor substrate |
JP2007251078A (ja) * | 2006-03-20 | 2007-09-27 | Nuflare Technology Inc | 気相成長装置 |
JP5659493B2 (ja) * | 2010-01-18 | 2015-01-28 | 信越半導体株式会社 | 気相成長方法 |
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