JPS59127847A - スパツタリング装置の静電チヤツク装置 - Google Patents
スパツタリング装置の静電チヤツク装置Info
- Publication number
- JPS59127847A JPS59127847A JP288683A JP288683A JPS59127847A JP S59127847 A JPS59127847 A JP S59127847A JP 288683 A JP288683 A JP 288683A JP 288683 A JP288683 A JP 288683A JP S59127847 A JPS59127847 A JP S59127847A
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- frequency electrode
- matter
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- electrode
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Jigs For Machine Tools (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。
め要約のデータは記録されません。
Description
【発明の詳細な説明】
本発明はスパッタリング装置に係り、％に被処理物を静
電作用力により保持して処理する静電チャック装置に関
する。
電作用力により保持して処理する静電チャック装置に関
する。
例えば半導体ウェファの表面を清浄化するためにスパッ
タリング装置が用いられる。このスパッタリング装置は
一対の電極を持った処理室中に被処理物を置き、両電極
間圧放雷を起して処理室内にプラズマイオンを生成し、
とのプラズマイオンを被処理物に作用させるものである
。そして、この処理に際し被処理物を何れかの電極上に
保持するととになるが、このために何らかのチャック装
置を利用する。
タリング装置が用いられる。このスパッタリング装置は
一対の電極を持った処理室中に被処理物を置き、両電極
間圧放雷を起して処理室内にプラズマイオンを生成し、
とのプラズマイオンを被処理物に作用させるものである
。そして、この処理に際し被処理物を何れかの電極上に
保持するととになるが、このために何らかのチャック装
置を利用する。
従来、このチャック装置としては機械的に被処理物を保
持するものがある。これは被処理物の端部を保持部材に
よって一方の電１極面に押圧するようにしている。
持するものがある。これは被処理物の端部を保持部材に
よって一方の電１極面に押圧するようにしている。
しかしながら、この機械式チャックは複雑な機構を必要
とする上に、被処理物の表面の一部をプラズマイオンか
ら覆い隠すことになり不具合である。
とする上に、被処理物の表面の一部をプラズマイオンか
ら覆い隠すことになり不具合である。
本発明は上述の点に鑑みてなされたもので、被処理物を
載置すべき電極の表面に絶縁層を配し、この絶縁層を挾
んで被処理物と電極とに荷電することＫより静電的に被
処理物をチャッキングし且つ荷電管を検出することによ
りチャッキングの適否を判定し得るような静電チャック
装置を構成したものである。
載置すべき電極の表面に絶縁層を配し、この絶縁層を挾
んで被処理物と電極とに荷電することＫより静電的に被
処理物をチャッキングし且つ荷電管を検出することによ
りチャッキングの適否を判定し得るような静電チャック
装置を構成したものである。
以下添付図面を参照して本発明の一実施例を説明する。
図は本発明に係るスパッタリング装置の全体構成を示し
ている。このスパッタリング装置は機構的には処理室ｌ
／と給電回路室／：ｌとを有し、処理室ヌパッタリング
用高周波およびチャッキング用直流の給電回路を収納し
てなるものである。処理室ｌ／が下方にあるのは被処理
物の処理面を下向きにし塵埃等の付着防止を図ったため
である。
ている。このスパッタリング装置は機構的には処理室ｌ
／と給電回路室／：ｌとを有し、処理室ヌパッタリング
用高周波およびチャッキング用直流の給電回路を収納し
てなるものである。処理室ｌ／が下方にあるのは被処理
物の処理面を下向きにし塵埃等の付着防止を図ったため
である。
処理室ｌ／は容器２１の開口部に絶縁部材２ユを介して
高周波電極２３を配することにより密閉構造とされてお
り、高周波電極２３の処理室ｌｌ側の面にはカフトンフ
ィルム等の絶縁層評が設けられている。
高周波電極２３を配することにより密閉構造とされてお
り、高周波電極２３の処理室ｌｌ側の面にはカフトンフ
ィルム等の絶縁層評が設けられている。
そして絶縁層２ケの中心位置に被処理物３０を昇降させ
るための昇降テーブル８が設けられており、このテーブ
ル２５の軸部はペローズムにより気密構造がとられてい
る。なお、処理室／／を真空化するための要素および被
処理物３θを搬出入するための要りは図示を省略してい
る。
るための昇降テーブル８が設けられており、このテーブ
ル２５の軸部はペローズムにより気密構造がとられてい
る。なお、処理室／／を真空化するための要素および被
処理物３θを搬出入するための要りは図示を省略してい
る。
一方給電回路室１２は、高周波電極２３に高周波電源Ｒ
Ｆからの高周波電流を供給するための、コンデンサＣ１
、ＯｃおよびインダクタンスＬａからなるインビーダン
ヌマッチング回路と、高周波電極２３に被処理物３０を
チャッキングするため直流電源ＥからスイッチＳ、 、
Ｓ、の開閉に応じて与えられる直流電流を高周波電極２
３に供給するための回路とが設けられている。この直流
電流を供給する回路に挿入されたインダクタンスＬｆお
よびコンデンサＯｆは冒周波電流が漏洩することを防止
するためのフィルタを構成する。
Ｆからの高周波電流を供給するための、コンデンサＣ１
、ＯｃおよびインダクタンスＬａからなるインビーダン
ヌマッチング回路と、高周波電極２３に被処理物３０を
チャッキングするため直流電源ＥからスイッチＳ、 、
Ｓ、の開閉に応じて与えられる直流電流を高周波電極２
３に供給するための回路とが設けられている。この直流
電流を供給する回路に挿入されたインダクタンスＬｆお
よびコンデンサＯｆは冒周波電流が漏洩することを防止
するためのフィルタを構成する。
そして、チャッキング電流の通電路として処理室側には
、テーブルコがブッシングを通って容器２／の外部に設
けられた電流制限抵抗Ｒに接続され、 ′この抵抗Ｂ
を介して接地されている。この抵抗Ｂはチャッキング用
直流電源Ｅが過大電流を流すことを防止するために設け
られたものであると同時に、その一部から取出した電圧
によりチャック力の検出を行うためのものでもある。す
なわち抵抗Ｂに流れる電流の積分値が高周波電極３と被
処理物ｔＯとの間の蓄積電荷針つまりチャック力に等し
いことから抵抗只の一部から取出した電圧を増幅器ＡＩ
Ｐで増幅し積分画工Ｔによって積分することによりチャ
ック力を知ることができる。積分画工Ｔの出力は表示装
置ＤＰに与えられ、チャック力の表示が行われる。表示
装置ＤＰにレベル判定機能を持たせておけばチャック力
の適否を表示または（１） 出力することができる。
、テーブルコがブッシングを通って容器２／の外部に設
けられた電流制限抵抗Ｒに接続され、 ′この抵抗Ｂ
を介して接地されている。この抵抗Ｂはチャッキング用
直流電源Ｅが過大電流を流すことを防止するために設け
られたものであると同時に、その一部から取出した電圧
によりチャック力の検出を行うためのものでもある。す
なわち抵抗Ｂに流れる電流の積分値が高周波電極３と被
処理物ｔＯとの間の蓄積電荷針つまりチャック力に等し
いことから抵抗只の一部から取出した電圧を増幅器ＡＩ
Ｐで増幅し積分画工Ｔによって積分することによりチャ
ック力を知ることができる。積分画工Ｔの出力は表示装
置ＤＰに与えられ、チャック力の表示が行われる。表示
装置ＤＰにレベル判定機能を持たせておけばチャック力
の適否を表示または（１） 出力することができる。
次にスパッタリング装置による被処理物の処理と関連さ
せて動作を説明する。
せて動作を説明する。
まず図示しない搬送人機構により被処理物３θが処理室
／／に搬入され、このとき下降状態にある昇降テーブル
２Ｓ上に載置される。この状態で処理室ｌ／はブラズｉ
イオン形成司能な状態にあるとする。
／／に搬入され、このとき下降状態にある昇降テーブル
２Ｓ上に載置される。この状態で処理室ｌ／はブラズｉ
イオン形成司能な状態にあるとする。
次いで昇降テーブルｊを上昇させて被処理物３０の上面
を絶縁層、２＋に接触させる。接触したらチャッキング
を行う。これは連動関係のスイッチＳ１を閉、Ｓ、を開
として直流電源Ｅを高周波電極３に接続することにより
行う。被処理物３０はテーブル２５および電流制限抵抗
Ｈを介して接地されているから、高周波電極刀と被処理
物ｌθとの間に電荷が蓄積され始める。この電荷蓄積針
は逐時表示装置ＤＰに表示される。所定電荷が蓄積され
たら被処理物１０は高周波電極２３との間の静電吸引力
により絶縁層コタに密着するからテーブルｊを下降させ
てよい。テーブル２Ｓの下降は作業員が表示装置ＤＰを
見ながら行ってもよいし、表示装置ｎｐの出力（ｔ
） により図示しないテーブル昇降機構を作動させてもよい
。
を絶縁層、２＋に接触させる。接触したらチャッキング
を行う。これは連動関係のスイッチＳ１を閉、Ｓ、を開
として直流電源Ｅを高周波電極３に接続することにより
行う。被処理物３０はテーブル２５および電流制限抵抗
Ｈを介して接地されているから、高周波電極刀と被処理
物ｌθとの間に電荷が蓄積され始める。この電荷蓄積針
は逐時表示装置ＤＰに表示される。所定電荷が蓄積され
たら被処理物１０は高周波電極２３との間の静電吸引力
により絶縁層コタに密着するからテーブルｊを下降させ
てよい。テーブル２Ｓの下降は作業員が表示装置ＤＰを
見ながら行ってもよいし、表示装置ｎｐの出力（ｔ
） により図示しないテーブル昇降機構を作動させてもよい
。
テーブル２夕が下降し切ったらスパッタリングを行う。
これは、高周波電源Ｒ１！′をオンにすることにより行
う。ただしそれに先立ってコンデンサ０１、Ｏｃを調整
して被処理物３θの特性に応じたインヒータンヌマッチ
ングをとっておく。スパッタリング中被処理物３ｏを過
熱させないために図示しない冷却手段により高周波電極
２３を冷却する。
う。ただしそれに先立ってコンデンサ０１、Ｏｃを調整
して被処理物３θの特性に応じたインヒータンヌマッチ
ングをとっておく。スパッタリング中被処理物３ｏを過
熱させないために図示しない冷却手段により高周波電極
２３を冷却する。
スパッタリング終了後、被処理物３ｏを取出すためにテ
ーブル２左を再び上昇させ、スイッチＳ、を開、Ｓ、を
閉とする。とれにより高周波電極：１３と被処理物ＩＯ
との間の蓄ｍｔｔ荷は電流制限抵抗Ｆを介して放電する
。したがって被処理物３ｏは静電吸引力を失い、テーブ
ル２夕を下降させれば被処理物３ｏも下降する。静電作
用力が消失しても被処理物３ｏが絶縁層２４１に吸着し
ているときに備えて高周波電極コ３と絶縁層コダとの間
にエアを吹込む等の手段を設けてもよい。
ーブル２左を再び上昇させ、スイッチＳ、を開、Ｓ、を
閉とする。とれにより高周波電極：１３と被処理物ＩＯ
との間の蓄ｍｔｔ荷は電流制限抵抗Ｆを介して放電する
。したがって被処理物３ｏは静電吸引力を失い、テーブ
ル２夕を下降させれば被処理物３ｏも下降する。静電作
用力が消失しても被処理物３ｏが絶縁層２４１に吸着し
ているときに備えて高周波電極コ３と絶縁層コダとの間
にエアを吹込む等の手段を設けてもよい。
テーブル君が下降したら図示しない搬出入機構により被
処理物３０を取出し、次に処理すべき被処理物を装入す
る。以下上叢己動作を繰返す。
処理物３０を取出し、次に処理すべき被処理物を装入す
る。以下上叢己動作を繰返す。
以上は被処理物が１常にチャッキングされた場合である
が、チャッキングが正しく行われない場合もある。これ
は所定時間内に高周波型、＠２３と被処理物／θとの間
に所定の電荷が蓄積されない場合であり、例えば被処理
物３０の反り等によって起きる。
が、チャッキングが正しく行われない場合もある。これ
は所定時間内に高周波型、＠２３と被処理物／θとの間
に所定の電荷が蓄積されない場合であり、例えば被処理
物３０の反り等によって起きる。
この場合は被処理物３０をスパッタリングせずに取出す
訳であるが、その判断は表示装置ＤＰの表示または出力
による。
訳であるが、その判断は表示装置ＤＰの表示または出力
による。
本発明は上述のように、従来の機械式チャッキングに代
って静電式チャッキングを行い然もチャック力を検出す
るようにしたため、簡単な機構でスパッタリングに好適
なチャッキングができ、その上被処理物の不具合をも押
押することができるものであり、スパッタリング装置の
構成上極めて有用な本のである。
って静電式チャッキングを行い然もチャック力を検出す
るようにしたため、簡単な機構でスパッタリングに好適
なチャッキングができ、その上被処理物の不具合をも押
押することができるものであり、スパッタリング装置の
構成上極めて有用な本のである。
図は本発明に係るスパッタリング装置の全体構成を示す
縦断面図である。 ／／・・・処理室、ｔ、ｌ・・・給電回路室、２／・・
容器、コ３・・・高周波電極１．２ダ・・・絶縁層、２
５・・・昇降テーブル、Ｅ・・・直流電源、Ｓ・・・ス
イッチ、Ｒ・・・電流制限抵抗、ＡＦ・・増幅器、工Ｔ
・・・積分器。
縦断面図である。 ／／・・・処理室、ｔ、ｌ・・・給電回路室、２／・・
容器、コ３・・・高周波電極１．２ダ・・・絶縁層、２
５・・・昇降テーブル、Ｅ・・・直流電源、Ｓ・・・ス
イッチ、Ｒ・・・電流制限抵抗、ＡＦ・・増幅器、工Ｔ
・・・積分器。
Claims (1)
- 内部に所定のガスが略々真空に近い状態で収容された処
理室に高周波電極および他の電極を設け、これら両電極
間で高周波放電を行ってスパッタリング処理を施すため
に前記高周波電極近傍に被処理物をチャッキングする装
置において、前記処理室に面する表面に絶縁層が設けら
れた高周波電極と、この高周波電極に前記絶縁層を介し
て対向するように前記処理室内で被処理物を移動させる
装置と、前記高周波電極および前記被処理物の間に直流
電圧を与える電源と、この電源から前記高周波電極およ
び前記被処理物に至る通電経路に挿入された電流制限抵
抗と、この抵抗に流れる電流を積分した出力を得る検出
回路とをそなえ、前記被処理物を前記高周波電極に対し
静電的に付着させたときこれら両者間に作用する静電吸
引力を測定するようにしたことを特徴とするスパッタリ
ング装置の静電チャック装置。
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP288683A JPS59127847A (ja) | 1983-01-13 | 1983-01-13 | スパツタリング装置の静電チヤツク装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP288683A JPS59127847A (ja) | 1983-01-13 | 1983-01-13 | スパツタリング装置の静電チヤツク装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS59127847A true JPS59127847A (ja) | 1984-07-23 |
| JPS6244410B2 JPS6244410B2 (ja) | 1987-09-21 |
Family
ID=11541834
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP288683A Granted JPS59127847A (ja) | 1983-01-13 | 1983-01-13 | スパツタリング装置の静電チヤツク装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59127847A (ja) |
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Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01199414A (ja) * | 1988-02-04 | 1989-08-10 | Matsushita Electric Ind Co Ltd | インダクタンス素子及びその製造方法 |
-
1983
- 1983-01-13 JP JP288683A patent/JPS59127847A/ja active Granted
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| CN113862645B (zh) * | 2021-09-28 | 2023-09-08 | 北京北方华创微电子装备有限公司 | 承载装置及半导体工艺腔室 |
| CN113862645A (zh) * | 2021-09-28 | 2021-12-31 | 北京北方华创微电子装备有限公司 | 承载装置及半导体工艺腔室 |
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| JPS6244410B2 (ja) | 1987-09-21 |
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