CN108735624B - 晶片的搬出方法 - Google Patents
晶片的搬出方法 Download PDFInfo
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Abstract
提供晶片的搬出方法,在利用静电卡盘工作台对晶片进行吸附保持的情况下,防止以剥离带电为主要原因的静电卡盘工作台的静电吸附力的降低。一种晶片的搬出方法,包含如下的步骤:电压施加停止步骤,对被施加电压而静电吸附着晶片的静电卡盘工作台停止电压的施加;除电电压施加步骤,在实施了电压施加停止步骤之后,流入与为了对晶片进行静电吸附而流过静电卡盘工作台的电流相反方向的电流,对静电卡盘工作台施加抵消剥离带电的除电电压;以及脱离步骤,在实施了除电电压施加步骤之后,在对静电卡盘工作台施加除电电压的状态下使晶片从静电卡盘工作台上脱离。
Description
技术领域
本发明涉及晶片的搬出方法,将晶片从静电卡盘工作台上搬出。
背景技术
在对晶片实施蚀刻加工的等离子蚀刻装置(例如,参照专利文献1)中,为了在成为了减压环境的腔内保持晶片而使用静电卡盘工作台。
专利文献1:日本特开2001-358097号公报
在将被静电吸附保持的晶片从静电卡盘工作台上搬出时,会在紧密接触的状态的静电卡盘工作台与晶片之间产生剥离带电。并且,当晶片脱离后的静电卡盘工作台处于仍旧带电的状态时,担心在对下一个晶片进行保持时静电吸附力会降低。
发明内容
因此,本发明的目的在于提供晶片的搬出方法,能够防止以剥离带电为主要原因的静电卡盘工作台的静电吸附力的降低。
根据本发明,提供晶片的搬出方法,将静电卡盘工作台所保持的晶片从该静电卡盘工作台上搬出,其中,该晶片的搬出方法具有如下的步骤:电压施加停止步骤,对被施加电压而静电吸附着晶片的该静电卡盘工作台停止该电压的施加;除电电压施加步骤,在实施了该电压施加停止步骤之后,流入与为了对晶片进行静电吸附而流过该静电卡盘工作台的电流相反方向的电流,对该静电卡盘工作台施加抵消剥离带电的除电电压;以及脱离步骤,在实施了该除电电压施加步骤之后,在对该静电卡盘工作台施加该除电电压的状态下使晶片从该静电卡盘工作台上脱离。
优选所述静电卡盘工作台具有:空气喷出口,其在对晶片进行保持的保持面上开口;以及空气提供路,其一端与该空气喷出口连通,并且另一端与空气提供源连接,该晶片的搬出方法还具有如下的空气吹送步骤:在实施了所述除电电压施加步骤之后,在实施所述脱离步骤之前,从该空气喷出口喷出空气。
优选晶片的搬出方法还具有如下的步骤:保持垫接触步骤,在实施所述除电电压施加步骤之前,使导电性晶片保持垫与所述静电卡盘工作台上的晶片接触;以及保持步骤,在实施了该保持垫接触步骤之后,利用该导电性晶片保持垫对晶片进行保持直到实施所述空气吹送步骤为止。
根据本发明,通过在使晶片从静电卡盘工作台上脱离之前对静电卡盘工作台施加抵消剥离带电的除电电压,能够使静电卡盘工作台带有与因剥离带电产生的电荷极性相反的电荷,防止晶片搬出时的剥离带电的产生,并防止晶片脱离后的静电卡盘工作台处于仍旧带电的状态。因此,在利用静电卡盘工作台保持下一个晶片时,能够防止出现静电卡盘工作台的静电吸附力降低的情况。
静电卡盘工作台具有:空气喷出口,其在对晶片进行保持的保持面上开口;以及空气提供路,其一端与空气喷出口连通,并且另一端与空气提供源连接,还具有如下的空气吹送步骤:在实施了除电电压施加步骤之后,在实施脱离步骤之前,从空气喷出口喷出空气,由此,能够将作用在晶片与静电卡盘工作台的保持面之间的真空吸附力排除,防止晶片从静电卡盘工作台时发生破损。
附图说明
图1是示出等离子蚀刻装置的一例的纵剖视图。
图2是示出在使导电性晶片保持垫与静电卡盘工作台上的晶片接触的状态下对静电卡盘工作台施加电压而产生静电吸附力的状态的纵剖视图。
图3是示出在使导电性晶片保持垫与静电卡盘工作台上的晶片的接触的状态下对静电卡盘工作台施加除电电压的状态的纵剖视图。
图4是示出在对静电卡盘工作台施加除电电压的状态下使晶片从静电卡盘工作台上脱离的状态的纵剖视图。
标号说明
1:等离子蚀刻装置;2:气体喷出头;20:轴承;21:气体扩散空间;21a:气体导入路;21b:气体喷出路;23:气缸;23a:缸筒;23b:活塞杆;23c:连结部件;25:反应气体提供源;27:匹配器;28:高频电源;3:静电卡盘工作台;30:基轴部;30a:轴承;31:晶片保持部;31a:保持面;34:金属板;36:直流电源;37:第1配线;37a:连接点;33:第3配线;33a:开关;32:直流电源;38:空气提供源;38a:空气提供路;39:冷却水提供单元;39a:冷却水输水路;6:减压室;62:搬入搬出口;62a:遮板;62b:遮板可动单元;64:减压单元;64a:排气口;7:搬送单元;70:导电性晶片保持垫;700:吸附部;700a:保持面;701:框体;71:吸引源;71a:连通路;72:第2配线;79:臂部;790:连结部件;8:电压测量单元;80、81:电阻;84:电压计;9:控制部;W:晶片;Wa:晶片的正面;Wb:晶片的背面。
具体实施方式
在减压环境下对晶片W实施等离子蚀刻处理的图1所示的等离子蚀刻装置1例如具有:静电卡盘工作台3,其具有对晶片W进行保持的保持面31a;减压室6,其具有对配设有静电卡盘工作台3的室内进行减压的减压单元64;以及搬送单元7,其将晶片W搬入到减压室6内或将晶片W从减压室6搬出。
静电卡盘工作台3例如具有:基轴部30,其以能够借助轴承30a进行上下动作的方式贯穿插入在减压室6的下部;以及晶片保持部31,其由氧化铝等陶瓷或氧化钛等电介质形成,其纵剖面为大致T字状。形成为例如圆板状的晶片保持部31在基轴部30的上端侧与基轴部30一体形成,晶片保持部31的上表面由电介质构成,成为对晶片W进行保持的保持面31a。另外,晶片保持部31也可以通过在其他基台上配置由陶瓷等构成的电介质膜而构成。
在基轴部30和晶片保持部31的内部形成有供冷却水通过的用虚线表示的冷却水输水路39a,冷却水输水路39a与冷却水提供单元39连通。冷却水提供单元39使冷却水流入冷却水输水路39a,该冷却水从内部对静电卡盘工作台3进行冷却。例如,当在处理对象的晶片W上粘贴有未图示的保护带等的情况下,在等离子蚀刻处理中,能够通过冷却水提供单元39将静电卡盘工作台3的保持面31a的温度保持为不会从保护带产生气体的温度以下。
在静电卡盘工作台3的内部埋设有金属板34来作为电极,通过对该电极施加电压而产生电荷。金属板34形成为圆形板状,与保持面31a平行配设,经由第1配线37与直流电源36的正端子侧连接。通过从直流电源36对金属板34施加高压的直流电压,从而在保持面31a上产生因极化而出现的电荷(静电),通过其库仑力将晶片W静电吸附在保持面31a上。
例如,图1所示的第1配线37的连接点37a与第3配线33的一端连接。在第3配线33上设置有开关33a,并且,第3配线33的另一端与直流电源32的负端子侧连接。
如图1所示,从基轴部30到晶片保持部31形成有空气提供路38a,空气提供路38a的一端(上端)在晶片保持部31的内部朝向径向外侧呈放射状分支。空气提供路38a的另一端与由真空产生装置和压缩机等构成的空气提供源38连通。
多个空气喷出口31b在静电卡盘工作台3的保持面31a上开口,各空气喷出口31b朝向厚度方向(Z轴方向)贯通金属板34,并在晶片保持部31内与空气提供路38a连通。
喷出反应气体的气体喷出头2借助轴承20而升降自如地配设在减压室6的上部。在气体喷出头2的内部设置有气体扩散空间21,气体扩散空间21的上部与气体导入路21a连通,气体扩散空间21的下部与气体喷出路21b连通。气体喷出路21b的下端在气体喷出头2的下表面朝向静电卡盘工作台3侧开口。
气体喷出头2与使气体喷出头2进行上下动作的气缸23连接。气缸23例如具有:缸筒23a,其固定在减压室6的上表面上,在缸筒23a的内部具有未图示的活塞,在缸筒23a的基端侧(-Z方向侧)具有底部;活塞杆23b,其插入到缸筒23a中且下端安装在活塞上;以及连结部件23c,其固定在活塞杆23b的上端,对气体喷出头2进行支承。对缸筒23a提供(或排出)空气而使缸筒23a的内部的压力发生变化,从而使活塞杆23b沿Z轴方向进行上下动作,气体喷出头2也随之进行上下动作。
形成于气体喷出头2的内部的气体导入路21a与反应气体提供源25连通。反应气体提供源25例如对作为反应气体的SF6、CF4、C2F6、C2F4等氟类气体进行贮存。另外,除了反应气体提供源25之外,气体导入路21a也可以与未图示的辅助气体提供源连通,该辅助气体提供源对辅助等离子蚀刻反应的气体进行贮存。在该情况下,在辅助气体提供源中贮存有Ar、He等稀有气体来作为辅助气体。
气体喷出头2经由匹配器27与高频电源28连接。通过从高频电源28经由匹配器27向气体喷出头2提供高频电力,能够使从气体喷出路21b喷出的气体等离子化。
在减压室6的侧部设置有用于进行晶片W的搬入搬出的搬入搬出口62和对该搬入搬出口62进行开闭的遮板62a。例如,遮板62a能够通过气缸等遮板可动单元62b而进行上下动作。
在减压室6的下部形成有排气口64a,该排气口64a与减压单元64连接。通过使该减压单元64进行动作,能够将减压室6的内部减压到规定的真空度。
图1所示的搬送单元7具有导电性晶片保持垫70。导电性晶片保持垫70例如其外形为圆形,具有:吸附部700,其由石墨多孔板或金属多孔板等导电体的多孔部件构成,对晶片W进行吸附;以及框体701,其对吸附部700进行支承。吸附部700与连通路71a的一端连通,连通路71a的另一端与由真空产生装置和压缩机等构成的吸引源71连接。并且,通过将吸引源71所产生的吸引力传递到作为吸附部700的露出面的、与框体701的下表面形成为同一平面的保持面700a,导电性晶片保持垫70能够利用保持面700a对晶片W进行吸引保持。
例如,在导电性晶片保持垫70的框体701的上表面固定有连结部件790,导电性晶片保持垫70借助连结部件790固定在臂部79的一端的下表面侧。臂部79能够在水平面上进行平行移动或回旋移动,并且能够沿Z轴方向进行上下动作。
搬送单元7具有使导电性晶片保持垫70接地的第2配线72。第2配线72的一端72b接地,另一端72a与导电性晶片保持垫70的吸附部700连接。
例如,如图1所示,在第2配线72上,电阻80与电阻81串联连接,并且,对电阻81的两端的电压进行测量的电压计84与电阻81并联连接。通过该电阻80和电阻81以及电压计84来构成电压测量单元8。
如图1所示,等离子蚀刻装置1具有由CPU和存储器等存储元件等构成的控制部9,在控制部9的控制下,对蚀刻气体的喷出量、时间以及高频电力等条件进行控制。
以下,对利用图1所示的静电卡盘工作台3对晶片W进行吸附保持、然后在减压环境下对晶片W实施等离子蚀刻处理的情况进行说明。晶片W例如是外形为圆形的半导体晶片,在晶片W的正面Wa上例如形成有多个器件。在晶片W的正面Wa上例如也可以粘贴有未图示的保护带来保护晶片W的正面Wa。
使导电性晶片保持垫70移动而将其定位在晶片W的上方。并且,使臂部79沿-Z方向下降,使导电性晶片保持垫70的保持面700a与晶片W的背面Wb接触。然后,通过使吸引源71进行吸引,从而如图1所示导电性晶片保持垫70利用保持面700a对晶片W进行吸引保持。
接着,搬送单元7将晶片W搬入到减压室6内的静电卡盘工作台3上。打开减压室6的遮板62a,使吸引保持着晶片W的导电性晶片保持垫70通过搬入搬出口62而向静电卡盘工作台3上移动。然后,使导电性晶片保持垫70下降,使晶片W的正面Wa侧与静电卡盘工作台3的保持面31a接触,将晶片W载置在静电卡盘工作台3上。
如图2所示的那样使直流电源36的按钮开关360成为接通状态,从直流电源36经由第1配线37向静电卡盘工作台3提供电力。在图2所示的箭头R1方向上流过电流,对金属板34施加规定的直流电压(例如,5000V的直流电压),从而在金属板34上的晶片保持部31的电介质层与晶片W之间出现电介质极化现象,正(+)电荷集中在晶片保持部31的保持面31a附近。并且,由于静电卡盘工作台3和导电性晶片保持垫70成为隔着晶片W而连接的状态,所以经由第2配线72和由导电体形成的吸附部700对晶片W提供负(-)电荷,从而使晶片W带有与保持面31a极性相反的负电。因此,通过作用在晶片W与保持面31a之间的静电力将晶片W吸附保持在保持面31a上。另外,在图2中,省略了减压室6等的结构。
例如,电压计84在电阻81的两端对向晶片W提供负(-)电荷时的对电压测量单元8的电阻81所施加的电压(过度电压)进行测量。关于电压计84所测量的施加给电阻81的电压,其在从稳定电压急剧上升到过度电压附近之后,逐渐下降而回到稳定电压。例如,电压计84与控制部9连接,电压计84将与施加给该电阻81的电压的变化相关的信息发送到控制部9,控制部9根据该电压的变化来计测晶片W的带电量。控制部9根据所计测的晶片W的带电量的值来判断充分带有负电的晶片W被可靠地吸附保持在静电卡盘工作台3的保持面31a上的状态,并将该判断结果发送到外部。
在可以确认静电卡盘工作台3对晶片W进行充分吸附之后,停止吸引源71所进行的吸引,使晶片W从导电性晶片保持垫70的保持面700a离开。然后,导电性晶片保持垫70立即从图1所示的减压室6内退避。通过使导电性晶片保持垫70退避而使晶片W处于不接地的状态,晶片保持部31的保持面31a附近的电荷不会立即消失,并且,晶片W的带电状态不会立即解除。因此,在保持面31a与晶片W之间充分地残留有基于静电力的吸附力。
利用遮板62a来关闭减压室6的搬入搬出口62,通过减压单元64对减压室6内进行减压排气而成为真空状态。然后,在使气体喷出头2下降之后,从反应气体提供源25向气体喷出头2内的气体导入路21a提供蚀刻气体,从各气体喷出路21b的开口朝向被静电卡盘工作台3吸附保持的晶片W的背面Wb整个面均匀地喷出蚀刻气体。
将蚀刻气体导入到减压室6内,并且从高频电源28向气体喷出头2施加高频电力而在气体喷出头2与静电卡盘工作台3之间产生高频电场,使蚀刻气体等离子化。等离子化的蚀刻气体对晶片W的背面Wb进行蚀刻。并且,由于晶片W因等离子体的产生而再次成为接地的状态,所以维持了静电卡盘工作台3对晶片W进行充分吸附的状态。
在适当进行了晶片W的背面Wb的等离子蚀刻之后,停止对气体喷出头2施加高频电力,利用减压单元64从排气口64a对减压室6内的蚀刻气体进行排气,成为在减压室6的内部不存在蚀刻气体的状态。接着,打开搬入搬出口62的遮板62a,利用搬送单元7将晶片W从减压室6内的静电卡盘工作台3搬出。这里,以下,对实施本发明的晶片的搬出方法而将保持在静电卡盘工作台3上的晶片W从静电卡盘工作台3上搬出的情况的各步骤进行说明。
(1)电压施加停止步骤
首先,如图3所示,对静电吸附着晶片W的静电卡盘工作台3停止电压的施加。即,使直流电源36的按钮开关360成为断开状态,停止从直流电源36经由第1配线37向静电卡盘工作台3提供电力。即使停止对静电卡盘工作台3的电压的施加,晶片保持部31的保持面31a附近的正(+)电荷也不会立即消失,并且,晶片W的负电位的带电状态不会立即解除。
(2)保持垫接触步骤
使导电性晶片保持垫70向被减压室6内的(在图3中未图示)静电卡盘工作台3所吸附保持的晶片W上移动,并使导电性晶片保持垫70与晶片W的位置对齐。然后,使导电性晶片保持垫70下降,使晶片W的背面Wb与导电性晶片保持垫70的保持面700a接触。
(3)保持步骤
例如,通过在使导电性晶片保持垫70与晶片W接触之后使吸引源71进行吸引,从而如图3所示将晶片W吸引保持在导电性晶片保持垫70的保持面700a上。
(4)除电电压施加步骤
在使导电性晶片保持垫70上升而使晶片W从静电卡盘工作台3的保持面31a脱离时,有时会产生带电。当因所谓的被称为剥离带电的现象而产生带电时,晶片W脱离后的静电卡盘工作台3按照带有保持面31a的正(+)电荷的方式带电,脱离后的晶片W按照带有负(-)电荷的方式带电。因此,在本发明的晶片的搬出方法中,如图3所示的那样使开关33a成为接通状态,从直流电源32经由第3配线33、连接点37a以及第1配线37向静电卡盘工作台3提供电力。在图3所示的箭头R2方向上流过电流,并且,将设定为规定的直流电压(例如,-5000V的直流电压)、即与之前利用静电卡盘工作台3吸附保持晶片W时的施加电压极性相反的电压作为抵消剥离带电的除电电压施加于静电卡盘工作台3内的金属板34,由此,静电卡盘工作台3的保持面31a附近的带电电位从正电位向负电位变化。并且,与此相伴地,晶片W的除电速度也变快,负(-)电荷充分地从晶片W去除。另外,根据残留在晶片W和静电卡盘工作台3上的电荷的量来调整除电电压的电压值和施加时间。
(5)空气吹送步骤
例如,在实施了除电电压施加步骤之后,如图4所示,空气提供源38经由空气提供路38a对静电卡盘工作台3的保持面31a提供空气,从空气喷出口31b喷出空气。通过该空气的喷射压力将晶片W从保持面31a推起,排除残留在静电卡盘工作台3的保持面31a与晶片W之间的真空吸附力,由此,能够防止当在后述的脱离步骤中晶片W从静电卡盘工作台3脱离时晶片W发生破损。
(6)脱离步骤
接着,使吸引保持着晶片W的导电性晶片保持垫70上升而将晶片W从被施加了除电电压的状态下的静电卡盘工作台3搬出。此时,由于静电卡盘工作台3的保持面31a附近的带电电位因除电电压的施加而变化为负电位,所以能够抑制在保持面31a与已充分除电的晶片W或残存有负(-)电荷的晶片W之间产生剥离带电。并且,在晶片W从保持面31a脱离之后,使直流电源32的开关33a成为断开状态而停止对静电卡盘工作台3的除电电压的施加。
这样,本发明的晶片的搬出方法具有如下的步骤:电压施加停止步骤,对施加电压而静电吸附了晶片W的静电卡盘工作台3停止电压的施加;除电电压施加步骤,在实施了电压施加停止步骤之后,流入与为了对晶片W进行静电吸附而流过静电卡盘工作台3的电流相反方向的电流,对静电卡盘工作台3施加抵消剥离带电的除电电压;以及脱离步骤,在实施了除电电压施加步骤之后,在对静电卡盘工作台3施加了除电电压的状态下使晶片W从静电卡盘工作台3上脱离,因此,通过在使晶片W从静电卡盘工作台3上脱离之前对静电卡盘工作台3施加抵消剥离带电的除电电压,由此,能够使静电卡盘工作台3带有与因剥离带电而产生的电荷极性相反的电荷,防止晶片搬出时的剥离带电的产生,并防止晶片脱离后的静电卡盘工作台3处于仍旧带电的状态。因此,在利用静电卡盘工作台3对下一个晶片W进行保持时,能够防止出现静电卡盘工作台3的静电吸附力降低的情况。
Claims (3)
1.一种晶片的搬入搬出方法,将晶片搬入到静电卡盘工作台上,另外,将该静电卡盘工作台所保持的晶片从该静电卡盘工作台上搬出,其中,
该晶片的搬入搬出方法具有如下的步骤:
连接步骤,将连接有电压测量单元的导电性晶片保持垫所吸引保持的晶片载置于该静电卡盘工作台的保持面上,并且隔着晶片将该静电卡盘工作台与该导电性晶片保持垫连接;
确认分离步骤,在实施了该连接步骤之后,对该静电卡盘工作台施加电压而对晶片提供电荷从而使晶片带电,并且根据向晶片提供该电荷时的施加给该电压测量单元的电阻的电压的变化来计测晶片的带电量,在根据晶片的该带电量的值确认了晶片被可靠地吸附保持在该静电卡盘工作台上之后,使该导电性晶片保持垫从晶片分离;
电压施加停止步骤,在该确认分离步骤之后、且晶片的加工被实施之后,对被施加该电压而静电吸附着晶片的该静电卡盘工作台停止该电压的施加;
除电电压施加步骤,在实施了该电压施加停止步骤之后,流入与为了对晶片进行静电吸附而流过该静电卡盘工作台的电流相反方向的电流,对该静电卡盘工作台施加抵消剥离带电的除电电压;以及
脱离步骤,在实施了该除电电压施加步骤之后,在对该静电卡盘工作台施加该除电电压的状态下使晶片从该静电卡盘工作台上脱离。
2.根据权利要求1所述的晶片的搬入搬出方法,其中,
所述静电卡盘工作台具有:
空气喷出口,其在对晶片进行保持的所述保持面上开口;以及
空气提供路,其一端与该空气喷出口连通,并且另一端与空气提供源连接,
该晶片的搬入搬出方法还具有如下的空气吹送步骤:在实施了所述除电电压施加步骤之后,在实施所述脱离步骤之前,从该空气喷出口喷出空气。
3.根据权利要求2所述的晶片的搬入搬出方法,其中,
该晶片的搬入搬出方法还具有如下的步骤:
保持垫接触步骤,在实施所述除电电压施加步骤之前,使所述导电性晶片保持垫与所述静电卡盘工作台上的晶片接触;以及
保持步骤,在实施了该保持垫接触步骤之后,利用该导电性晶片保持垫对晶片进行保持直到实施所述空气吹送步骤为止。
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US9929121B2 (en) * | 2015-08-31 | 2018-03-27 | Kulicke And Soffa Industries, Inc. | Bonding machines for bonding semiconductor elements, methods of operating bonding machines, and techniques for improving UPH on such bonding machines |
JP6905382B2 (ja) * | 2017-04-14 | 2021-07-21 | 株式会社ディスコ | ウェーハの搬入出方法 |
JP7138418B2 (ja) | 2017-09-04 | 2022-09-16 | 東京エレクトロン株式会社 | 脱離制御方法及びプラズマ処理装置 |
CN111968901B (zh) * | 2020-08-25 | 2022-08-16 | 北京北方华创微电子装备有限公司 | 半导体反应腔室及半导体加工设备 |
EP4174994A1 (en) | 2021-10-28 | 2023-05-03 | Nederlandse Organisatie Voor Toegepast- Natuurwetenschappelijk Onderzoek Tno | Tunable redox flow battery |
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JPH11297803A (ja) * | 1998-04-08 | 1999-10-29 | Hitachi Ltd | 静電吸着装置および被吸着物離脱方法 |
US6238160B1 (en) * | 1998-12-02 | 2001-05-29 | Taiwan Semiconductor Manufacturing Company, Ltd' | Method for transporting and electrostatically chucking a semiconductor wafer or the like |
CN105990087A (zh) * | 2015-03-16 | 2016-10-05 | 株式会社迪思科 | 减压处理装置 |
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TWI743330B (zh) | 2021-10-21 |
MY184244A (en) | 2021-03-29 |
US10665492B2 (en) | 2020-05-26 |
US20180301363A1 (en) | 2018-10-18 |
KR20180116152A (ko) | 2018-10-24 |
SG10201802806PA (en) | 2018-11-29 |
DE102018205547B4 (de) | 2022-06-09 |
KR102444698B1 (ko) | 2022-09-16 |
JP6905382B2 (ja) | 2021-07-21 |
DE102018205547A1 (de) | 2018-10-18 |
TW201843764A (zh) | 2018-12-16 |
CN108735624A (zh) | 2018-11-02 |
JP2018182094A (ja) | 2018-11-15 |
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