JP2018182094A - ウェーハの搬出方法 - Google Patents
ウェーハの搬出方法 Download PDFInfo
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- 238000000034 method Methods 0.000 title claims abstract description 14
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- 238000001179 sorption measurement Methods 0.000 abstract description 3
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- 238000003795 desorption Methods 0.000 abstract 1
- 239000007789 gas Substances 0.000 description 45
- 230000006837 decompression Effects 0.000 description 20
- 239000000498 cooling water Substances 0.000 description 11
- 230000008030 elimination Effects 0.000 description 10
- 238000003379 elimination reaction Methods 0.000 description 10
- 238000001020 plasma etching Methods 0.000 description 10
- 229910052751 metal Inorganic materials 0.000 description 9
- 239000002184 metal Substances 0.000 description 9
- 230000003068 static effect Effects 0.000 description 9
- 238000004891 communication Methods 0.000 description 7
- 238000005530 etching Methods 0.000 description 7
- 239000012495 reaction gas Substances 0.000 description 6
- 238000009792 diffusion process Methods 0.000 description 4
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- 230000010287 polarization Effects 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
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- 238000012545 processing Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- 230000001052 transient effect Effects 0.000 description 1
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Abstract
Description
減圧室6の搬入出口62をシャッター62aで閉め、減圧手段64によって減圧室6内を減圧排気し真空状態とする。そして、ガス噴出ヘッド2を下降させた後、反応ガス供給源25からエッチングガスをガス噴出ヘッド2内のガス導入路21aへ供給して、各ガス吐出路21bの開口から、静電チャックテーブル3に吸着保持されているウェーハWの裏面Wb全面に向かって均一に噴出させる。
まず、図3に示すように、ウェーハWを静電吸着した静電チャックテーブル3に対する電圧の印加を停止する。すなわち、直流電源36の押しボタンスイッチ360をオフ状態として、直流電源36からの第1の配線37を介した静電チャックテーブル3への電力の供給を停止する。静電チャックテーブル3に対する電圧の印加を止めても、ウェーハ保持部31の保持面31a近傍の正(+)電荷は直ちにはなくならず、また、ウェーハWの負電位の帯電状態は直ちには解除されない。
導電性ウェーハ保持パッド70を減圧室6内の(図3においては不図示)静電チャックテーブル3に吸着保持されているウェーハW上へと移動させ、導電性ウェーハ保持パッド70とウェーハWとの位置を合わせる。そして、導電性ウェーハ保持パッド70を降下させ、ウェーハWの裏面Wbと導電性ウェーハ保持パッド70の保持面700aとを接触させる。
例えば、ウェーハWに導電性ウェーハ保持パッド70を接触させた後、吸引源71が吸引を行うことで、図3に示すように導電性ウェーハ保持パッド70の保持面700aにウェーハWが吸引保持される。
導電性ウェーハ保持パッド70を上昇させて、静電チャックテーブル3の保持面31aからウェーハWを離脱させるときに帯電が生じることがある。いわゆる剥離帯電と呼ばれる現象で、これが生じてしまうと、ウェーハWが離脱した後の静電チャックテーブル3が保持面31aの正(+)電荷をもって帯電し、離脱したウェーハWが負(−)電荷をもって帯電してしまう。そこで、本発明に係るウェーハの搬出方法においては、図3に示すようにスイッチ33aをオン状態とし、直流電源32から第3の配線33、接続点37a、及び第1の配線37を介して静電チャックテーブル3に電力を供給する。図2に示す矢印R2方向に電流を流れるとともに、静電チャックテーブル3内の金属板34に所定の直流電圧(例えば、−5000Vの直流電圧)される、即ち、先に静電チャックテーブル3でウェーハWを吸着保持した際の印加電圧とは逆極性の電圧が剥離帯電を打ち消す除電電圧として印加されることで、静電チャックテーブル3の保持面31a近傍の帯電電位が正電位から負電位へ変化する。また、これに伴って、ウェーハWの除電速度も速められ、ウェーハWから充分に負(−)電荷が除去されていく。なお、除電電圧の電圧値及び印加時間は、ウェーハW及び静電チャックテーブル3に残留する電荷の量に応じて調整される。
例えば、除電電圧印加ステップを実施した後、図4に示すように、エア供給源38がエア供給路38aを介して静電チャックテーブル3の保持面31aに対してエアの供給を行い、エア噴出口31bからエアを噴出させる。このエアの噴射圧力によって、ウェーハWを保持面31aから押し上げ、静電チャックテーブル3の保持面31aとウェーハWとの間に残留している真空吸着力を排除することで、後述する離脱ステップにおいて静電チャックテーブル3からウェーハWが離脱するに際に、ウェーハWが破損してしまうことを防ぐことができる。
次いで、ウェーハWを吸引保持する導電性ウェーハ保持パッド70を上昇させて、除電電圧が印加されている状態の静電チャックテーブル3からウェーハWを搬出する。この際、除電電圧の印加によって静電チャックテーブル3の保持面31a近傍の帯電電位は負電位に変化しているため、保持面31aと除電が十分になされたウェーハW又は負(−)電荷が残存しているウェーハWとの間における剥離帯電の発生が抑制される。そして、ウェーハWが保持面31aから離脱した後、直流電源32のスイッチ33aをオフ状態にして静電チャックテーブル3に対する除電電圧の印加を停止する。
2:ガス噴出ヘッド 20:軸受け 21:ガス拡散空間 21a:ガス導入路 21b:ガス吐出路 23:エアシリンダ 23a:シリンダチューブ 23b:ピストンロッド 23c:連結部材
25:反応ガス供給源 27:整合器 28:高周波電源
3:静電チャックテーブル 30:基軸部 30a:軸受け 31:ウェーハ保持部 31a:保持面 34:金属板 36:直流電源 37:第1の配線 37a:接続点
33:第3の配線 33a:スイッチ 32:直流電源
38:エア供給源 38a:エア供給路
39:冷却水供給手段 39a:冷却水通水路
6:減圧室 62:搬入出口 62a:シャッター 62b:シャッター可動手段
64:減圧手段 64a:排気口
7:搬送手段 70:導電性ウェーハ保持パッド 700:吸着部 700a:保持面 701:枠体
71:吸引源 71a:連通路 72:第2の配線
79:アーム部 790:連結部材
8:電圧測定手段 80、81:抵抗 84:電圧計
9:制御部
W:ウェーハ Wa:ウェーハの表面 Wb:ウェーハの裏面
Claims (3)
- 静電チャックテーブルで保持されたウェーハを該静電チャックテーブル上から搬出するウェーハの搬出方法であって、
電圧が印加されてウェーハを静電吸着した該静電チャックテーブルに対して該電圧の印加を停止する電圧印加停止ステップと、
該電圧印加停止ステップを実施した後、ウェーハを静電吸着するために該静電チャックテーブルに流した電流と逆方向の電流を流し該静電チャックテーブルに剥離帯電を打ち消す除電電圧を印加する除電電圧印加ステップと、
該除電電圧印加ステップを実施した後、該静電チャックテーブルに該除電電圧が印加されている状態でウェーハを該静電チャックテーブル上から離脱させる離脱ステップと、を備えたウェーハの搬出方法。 - 前記静電チャックテーブルは、ウェーハを保持する保持面に開口するエア噴出口と、該エア噴出口に一端が連通するとともに他端がエア供給源に接続されたエア供給路とを有し、
前記除電電圧印加ステップを実施した後、前記離脱ステップを実施する前に該エア噴出口からエアを噴出させるエアブローステップを更に備えた、請求項1に記載のウェーハの搬出方法。 - 前記除電電圧印加ステップを実施する前に、前記静電チャックテーブル上のウェーハに導電性ウェーハ保持パッドを接触させる保持パッド接触ステップと、
該保持パッド接触ステップを実施した後、前記エアブローステップを実施するまでに該導電性ウェーハ保持パッドでウェーハを保持する保持ステップと、を更に備えた、請求項1または2に記載のウェーハの搬出方法。
Priority Applications (8)
Application Number | Priority Date | Filing Date | Title |
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JP2017080405A JP6905382B2 (ja) | 2017-04-14 | 2017-04-14 | ウェーハの搬入出方法 |
TW107108550A TWI743330B (zh) | 2017-04-14 | 2018-03-14 | 晶圓之搬出入方法 |
MYPI2018701245A MY184244A (en) | 2017-04-14 | 2018-03-27 | Wafer unloading method |
SG10201802806PA SG10201802806PA (en) | 2017-04-14 | 2018-04-04 | Wafer unloading method |
US15/950,874 US10665492B2 (en) | 2017-04-14 | 2018-04-11 | Wafer unloading method |
CN201810324276.3A CN108735624B (zh) | 2017-04-14 | 2018-04-12 | 晶片的搬出方法 |
DE102018205547.5A DE102018205547B4 (de) | 2017-04-14 | 2018-04-12 | Entnahmeverfahren für einen wafer |
KR1020180043063A KR102444698B1 (ko) | 2017-04-14 | 2018-04-13 | 웨이퍼의 반출 방법 |
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KR (1) | KR102444698B1 (ja) |
CN (1) | CN108735624B (ja) |
DE (1) | DE102018205547B4 (ja) |
MY (1) | MY184244A (ja) |
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US9929121B2 (en) * | 2015-08-31 | 2018-03-27 | Kulicke And Soffa Industries, Inc. | Bonding machines for bonding semiconductor elements, methods of operating bonding machines, and techniques for improving UPH on such bonding machines |
JP6905382B2 (ja) * | 2017-04-14 | 2021-07-21 | 株式会社ディスコ | ウェーハの搬入出方法 |
JP7138418B2 (ja) | 2017-09-04 | 2022-09-16 | 東京エレクトロン株式会社 | 脱離制御方法及びプラズマ処理装置 |
CN111968901B (zh) * | 2020-08-25 | 2022-08-16 | 北京北方华创微电子装备有限公司 | 半导体反应腔室及半导体加工设备 |
EP4174994A1 (en) | 2021-10-28 | 2023-05-03 | Nederlandse Organisatie Voor Toegepast- Natuurwetenschappelijk Onderzoek Tno | Tunable redox flow battery |
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US6238160B1 (en) * | 1998-12-02 | 2001-05-29 | Taiwan Semiconductor Manufacturing Company, Ltd' | Method for transporting and electrostatically chucking a semiconductor wafer or the like |
JP3633854B2 (ja) | 2000-06-12 | 2005-03-30 | 株式会社ディスコ | 半導体ウェハの加工装置 |
US7813103B2 (en) * | 2007-10-11 | 2010-10-12 | Applied Materials, Inc. | Time-based wafer de-chucking from an electrostatic chuck having separate RF BIAS and DC chucking electrodes |
CN102044466B (zh) * | 2009-10-12 | 2013-03-27 | 北京北方微电子基地设备工艺研究中心有限责任公司 | 一种静电卡盘及其残余电荷的消除方法 |
US20120308341A1 (en) * | 2009-11-09 | 2012-12-06 | Tokyo Electron Limited | Substrate processing apparatus and method of controlling substrate processing apparatus |
JP2014107382A (ja) | 2012-11-27 | 2014-06-09 | Fuji Electric Co Ltd | 半導体基板の脱離方法 |
JP2017126727A (ja) * | 2016-01-15 | 2017-07-20 | 東京エレクトロン株式会社 | 載置台の構造及び半導体処理装置 |
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US10720313B2 (en) * | 2017-08-23 | 2020-07-21 | Tokyo Electron Limited | Measuring device, measurement method, and plasma processing device |
US20190088518A1 (en) * | 2017-09-20 | 2019-03-21 | Applied Materials, Inc. | Substrate support with cooled and conducting pins |
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TWI743330B (zh) | 2021-10-21 |
CN108735624B (zh) | 2024-02-20 |
MY184244A (en) | 2021-03-29 |
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US20180301363A1 (en) | 2018-10-18 |
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DE102018205547B4 (de) | 2022-06-09 |
KR102444698B1 (ko) | 2022-09-16 |
JP6905382B2 (ja) | 2021-07-21 |
DE102018205547A1 (de) | 2018-10-18 |
TW201843764A (zh) | 2018-12-16 |
CN108735624A (zh) | 2018-11-02 |
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