TWI743330B - 晶圓之搬出入方法 - Google Patents
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Abstract
在藉由靜電夾頭座吸附保持晶圓的情況下,防 止以剝離帶電為要因之靜電夾頭座之靜電吸附力的下降。
一種晶圓之搬出入方法,其特徵係,包含 有:電壓施加停止步驟,對施加電壓而靜電吸附了晶圓之靜電夾頭座,停止電壓的施加;除電電壓施加步驟,在實施電壓施加停止步驟後,為了靜電吸附晶圓,而使與在靜電夾頭座流動之電流相反方向的電流流動,並將消除剝離帶電的除電電壓施加至靜電夾頭座;及脫離步驟,在實施除電電壓施加步驟後,在除電電壓被施加至靜電夾頭座的狀態下,使晶圓自靜電夾頭座上脫離。
Description
本發明,係關於將晶圓自靜電夾頭座上搬出的晶圓之搬出入方法。
在對晶圓施予蝕刻加工的電漿蝕刻裝置(例如,參閱專利文獻1)中,係為了在成為減壓環境的腔室內保持晶圓,而利用靜電夾頭座。
[專利文獻1]日本特開2001-358097號公報
在將經靜電吸附保持的晶圓自靜電夾頭座上搬出之際,係在密接之狀態的靜電夾頭座與晶圓之間會產生剝離帶電。而且,若為晶圓脫離後之靜電夾頭座保持帶電的狀態,則在保持下一個晶圓之際,有靜電吸附力下降之虞。
因此,本發明之目的,係在於提供一種晶圓之搬出入方法,可防止以剝離帶電為要因之靜電夾頭座之靜電吸附力的下降。
用於解決上述課題之本發明,係一種晶圓之搬出入方法,其將晶圓搬入靜電夾頭座上,又,將由該靜電夾頭座所保持之晶圓自該靜電夾頭座上搬出,該晶圓之搬出入方法,其特徵係,具備有:連接步驟,將由連接有電壓測定手段之導電性晶圓保持墊所吸引保持的晶圓載置於該靜電夾頭座之保持面,並且經由晶圓連接該靜電夾頭座與該導電性晶圓保持墊;確認脫離工程,在實施該連接步驟後,將電壓施加至該靜電夾頭座且將電荷供給至晶圓而使晶圓帶電,並且從對晶圓供給該電荷之際的施加至該電壓測定手段之電阻的電壓之變化,計測晶圓的帶電量,在從晶圓之該帶電量的值確認了晶圓確實被吸附保持於該靜電夾頭座後,使該導電性晶圓保持墊自晶圓脫離;電壓施加停止步驟,在實施該確認脫離工程及晶圓的加工後,對施加該電壓而靜電吸附了晶圓之該靜電夾頭座,停止該電壓的施加;除電電壓施加步驟,在實施該電壓施加停止步驟後,為了靜電吸附晶圓,而使與在該靜電夾頭座流動之電流相反方向的電流流動,並將消除剝離帶電的除電電壓施加至該靜電夾頭座;及脫離步驟,在實施該除電電壓施加步驟後,在該除電電壓被施加至該靜電夾頭座的狀態
下,使晶圓自該靜電夾頭座上脫離。
較佳為,前述靜電夾頭座,係具有:空氣噴出口,開口於保持晶圓的保持面;及空氣供給路徑,一端連通於該空氣噴出口,並且另一端被連接於空氣供給源,晶圓之搬出入方法,係更具備有:送風步驟,在實施前述除電電壓施加步驟後且實施前述脫離步驟之前,使空氣自該空氣噴出口噴出。
較佳為,晶圓之搬出入方法,係更具備有:保持墊接觸步驟,在實施前述除電電壓施加步驟之前,使導電性晶圓保持墊與前述靜電夾頭座上的晶圓接觸;及保持步驟,在實施該保持墊接觸步驟後,以該導電性晶圓保持墊來保持晶圓直至實施前述送風步驟為止。
在將晶圓搬入了靜電夾頭座時,並不容易確認靜電夾頭座是否充分地吸附晶圓。因此,本發明之晶圓之搬出入方法,係由於可藉由「將由連接有電壓測定手段之導電性晶圓保持墊所吸引保持的晶圓載置於靜電夾頭座之保持面,並且經由晶圓連接靜電夾頭座與導電性晶圓保持墊」的連接步驟與「在連接步驟後,於確認脫離工程,將電壓施加至靜電夾頭座且將電荷供給至晶圓而使晶圓帶電,並且從對晶圓供給電荷之際的施加至電壓測定手段之電阻的電壓之變化,計測晶圓的帶電量」的方式,從晶圓之帶電量的值容易地確認晶圓確實被吸附保持於靜電夾頭
座,其後,使導電性晶圓保持墊自晶圓脫離,因此,可在靜電夾頭座未充分吸附晶圓的狀態下,防止產生對晶圓進行加工這樣的事態。而且,由於具備有:電壓施加停止步驟,在實施確認脫離工程及晶圓的加工後,對施加電壓而靜電吸附了晶圓之靜電夾頭座,停止電壓的施加;除電電壓施加步驟,在實施電壓施加停止步驟後,為了靜電吸附晶圓,而使與在靜電夾頭座流動之電流相反方向的電流流動,並將消除剝離帶電的除電電壓施加至靜電夾頭座;及脫離步驟,在實施除電電壓施加步驟後,在除電電壓被施加至靜電夾頭座的狀態下,使晶圓自靜電夾頭座上脫離,因此,在使晶圓自靜電夾頭座上脫離之前,將消除剝離帶電的除電電壓施加至靜電夾頭座,藉此,使靜電夾頭座成為帶有與因剝離帶電而產生之帶電相反極的電性,可防止晶圓搬出時之剝離帶電的產生,並防止晶圓脫離後之靜電夾頭座成為保持帶電的狀態。因此,可在藉由靜電夾頭座保持下一個晶圓之際,防止產生靜電夾頭座之靜電吸附力下降這樣的事態,並藉由「將由導電性晶圓保持墊所吸引保持的下一個晶圓載置於靜電夾頭座之保持面,且再次實施連接步驟以下」的方式,可對複數片晶圓連續而適當地進行加工。
由於靜電夾頭座,係具有:空氣噴出口,開口於保持晶圓的保持面;及空氣供給路徑,一端連通於空氣噴出口,並且另一端被連接於空氣供給源,並設成為更具備有送風步驟者,該送風步驟,係在實施除電電壓施加
步驟後且實施脫離步驟之前,使空氣自空氣噴出口噴出,藉此,可消除作用於晶圓與靜電夾頭座的保持面之間的真空吸附力,且防止晶圓自靜電夾頭座脫離之際破損的情形。
1:電漿蝕刻裝置
2:氣體噴出頭
20:軸承
21:氣體擴散空間
21a:氣體導入路徑
21b:氣體吐出路徑
23:氣缸
23a:缸管
23b:活塞桿
23c:連結構件
25:反應氣體供給源
27:匹配器
28:高頻電源
3:靜電夾頭座
30:基軸部
30a:軸承
31:晶圓保持部
31a:保持面
34:金屬板
36:直流電源
37:第1配線
37a:連接點
33:第3配線
33a:開關
32:直流電源
38:空氣供給源
38a:空氣供給路徑
39:冷卻水供給手段
39a:冷卻水通水路
6:減壓室
62:搬入搬出口
62a:擋板
62b:擋板可動手段
64:減壓手段
64a:排氣口
7:搬送手段
70:導電性晶圓保持墊
700:吸附部
700a:保持面
701:框體
71:吸引源
71a:連通路徑
72:第2配線
79:臂部
790:連結構件
8:電壓測定手段
80、81:電阻
84:電壓計
9:控制部
W:晶圓
Wa:晶圓之表面
Wb:晶圓之背面
[圖1]表示電漿蝕刻裝置之一例的縱剖面圖。
[圖2]表示在使導電性晶圓保持墊與靜電夾頭座上之晶圓接觸的狀態下,將電壓施加至靜電夾頭座而產生靜電吸附力之狀態的縱剖面圖。
[圖3]表示在使導電性晶圓保持墊與靜電夾頭座上之晶圓接觸的狀態下,將除電電壓施加至靜電夾頭座之狀態的縱剖面圖。
[圖4]表示在將除電電壓施加至靜電夾頭座的狀態下,使晶圓自靜電夾頭座上脫離之狀態的縱剖面圖。
在減壓環境下,對晶圓W施予電漿蝕刻處理之圖1所示的電漿蝕刻裝置1,係例如具備有:靜電夾頭座3,具有保持晶圓W的保持面31a;減壓室6,具備有對配設了靜電夾頭座3之室內進行減壓的減壓手段64;及搬送手段7,將晶圓W搬入減壓室6或將晶圓W自減壓室6搬出。
靜電夾頭座3,係例如具備有:基軸部30,
可經由軸承30a,上下動作地被貫穿插入減壓室6的下部;及晶圓保持部31,由氧化鋁等的陶瓷或氧化鈦等的介電質所形成,其縱剖面大致呈T字狀。例如形成為圓板狀之晶圓保持部31,係與基軸部30一體地被形成於基軸部30的上端側,晶圓保持部31之上面由介電質所構成,成為保持晶圓W的保持面31a。另外,晶圓保持部31,係亦可被構成為如下述者:在其他基台上配置有由陶瓷等所構成的介電質膜。
在基軸部30及晶圓保持部31之內部,係形成有供冷卻水通過之以虛線所示的冷卻水通水路39a,在冷卻水通水路39a,係連通有冷卻水供給手段39。冷卻水供給手段39,係使冷卻水流入冷卻水通水路39a,該冷卻水自內部冷卻靜電夾頭座3。例如,在未圖示之保護帶等被黏貼於處理對象之晶圓W的情況下,係可於電漿蝕刻處理中,藉由冷卻水供給手段39,將靜電夾頭座3之保持面31a的溫度保持為不會從保護帶產生氣體的溫度以下。
在靜電夾頭座3之內部,係埋設有藉由施加電壓的方式而誘發電荷之作為電極的金屬板34。金屬板34,係被形成為圓形板狀,與保持面31a平行地配設,經由第1配線37被連接於直流電源36的正極端子側。藉由自直流電源36對金屬板34施加高壓之直流電壓的方式,在保持面31a會產生極化所致之電荷(靜電),晶圓W藉由其庫倫力被靜電吸附於保持面31a。
例如,在圖1所示之第1配線37的連接點
37a,係連接有第3配線33之一端。在第3配線33上,係設置有開關33a,又,第3配線33之另一端,係被連接於直流電源32的負極端子側。
自基軸部30到晶圓保持部31,係如圖1所示,形成有空氣供給路徑38a,空氣供給路徑38a之一端(上端),係在晶圓保持部31之內部,朝向徑方向外側分歧成放射狀。在空氣供給路徑38a之另一端,係連通有由真空產生裝置及壓縮機等所構成的空氣供給源38。
複數個空氣噴出口31b開口於靜電夾頭座3之保持面31a,各空氣噴出口31b,係朝向厚度方向(Z軸方向)貫通金屬板34,在晶圓保持部31內,與空氣供給路徑38a連通。
在減壓室6之上部,係經由軸承20而升降自如地配置有噴出反應氣體的氣體噴出頭2。在氣體噴出頭2之內部,係設置有氣體擴散空間21,在氣體擴散空間21之上部,係連通有氣體導入路徑21a,在氣體擴散空間21之下部,係連通有氣體吐出路徑21b。氣體吐出路徑21b之下端,係在氣體噴出頭2的下面,朝向靜電夾頭座3側開口。
在氣體噴出頭2,係連接有使氣體噴出頭2上下動作的氣缸23。氣缸23,係例如具備有:缸管23a,在內部具備有未圖示之活塞,並在基端側(-Z方向側)具有底部,被固定於減壓室6的上面;活塞桿23b,被插入缸管23a,下端被安裝於活塞;及連結構件23c,被固定於活塞桿23b的上端,支撐氣體噴出頭2。對缸管23a供給(或排出)
空氣,使缸管23a之內部的壓力變化,藉此,伴隨著活塞桿23b沿Z軸方向上下動作,氣體噴出頭2便上下動作。
在被形成於氣體噴出頭2之內部的氣體導入路徑21a,係連通有反應氣體供給源25。反應氣體供給源25,係貯存有反應氣體即SF6、CF4、C2F6、C2F4等的氟系氣體。另外,在氣體導入路徑21a,係除了反應氣體供給源25以外,亦可連通有貯存了支援電漿蝕刻反應之未圖示的支援氣體供給源。在該情況下,在支援氣體供給源,係貯存有Ar、He等的稀有氣體作為支援氣體。
在氣體噴出頭2,係經由匹配器27連接有高頻電源28。藉由將高頻電力從高頻電源28經由匹配器27供給至氣體噴出頭2的方式,可使從氣體吐出路徑21b所吐出的氣體離子化。
在減壓室6之側部,係設置有:搬入搬出口62,用以進行晶圓W之搬入搬出;及擋板62a,對該搬入搬出口62進行開關。例如,擋板62a,係可藉由氣缸等的擋板可動手段62b上下動作。
在減壓室6之下部,係形成有排氣口64a,在該排氣口64a,係連接有減壓手段64。藉由使該減壓手段64作動的方式,可將減壓室6之內部減壓至預定真空度。
圖1所示之搬送手段7,係具備有導電性晶圓保持墊70。導電性晶圓保持墊70,係例如其外形為圓形狀,具備有:吸附部700,由碳多孔或金屬多孔等的導電體之多孔構件所構成,對晶圓W進行吸附;及框體701,
支撐吸附部700。在吸附部700,係連通有連通路徑71a之一端,連通路徑71a之另一端,係被連接於由真空產生裝置及壓縮機等所構成的吸引源71。而且,藉由吸引源71所產生的吸引力被傳遞至吸附部700之露出面並被傳遞至與框體701之下面形成為同一面的保持面700a,藉此,導電性晶圓保持墊70,係可藉由保持面700a來吸引保持晶圓W。
例如,導電性晶圓保持墊70之框體701的上面,係固定有連結構件790,導電性晶圓保持墊70,係經由連結構件790被固定於臂部79之一端的下面側。臂部79,係可在水平面上平行移動或旋轉移動,並且可沿Z軸方向上下動作。
搬送手段7,係具備有將導電性晶圓保持墊70接地的第2配線72。第2配線72,係一端72b被接地,另一端72a被連接於導電性晶圓保持墊70的吸附部700。
例如,如圖1所示,在第2配線72,係串聯地連接有電阻80與電阻81,且測定電阻81之兩端的電壓之電壓計84與電阻81並聯地連接。藉由該電阻80及電阻81和電壓計84來構成電壓測定手段8。
如圖1所示,電漿蝕刻裝置1,係具備有由CPU及記憶體等的記憶元件等所構成之控制部9,在控制部9的控制下,對蝕刻氣體之吐出量或時間、高頻電力等的條件進行控制。
以下,說明關於在由圖1所示之靜電夾頭座3
吸附保持晶圓W後,在減壓環境下,對晶圓W施予電漿蝕刻處理的情形。晶圓W,係例如外形為圓形狀的半導體晶圓,在晶圓W之表面Wa,係例如形成有多數個元件。例如,亦可黏貼未圖示之保護帶來保護晶圓W的表面Wa。
導電性晶圓保持墊70移動而被定位於晶圓W的上方。進而,臂部79朝-Z方向下降,導電性晶圓保持墊70之保持面700a與晶圓W之背面Wb接觸。而且,吸引源71進行吸引,藉此,如圖1所示,導電性晶圓保持墊70以保持面700a來吸引保持晶圓W。
其次,搬送手段7將晶圓W搬入減壓室6內的靜電夾頭座3。減壓室6之擋板62a開啟,吸引保持晶圓W之導電性晶圓保持墊70通過搬入搬出口62而朝靜電夾頭座3上移動。而且,導電性晶圓保持墊70下降,並使晶圓W之表面Wa側與靜電夾頭座3之保持面31a接觸,將晶圓W載置於靜電夾頭座3上。
如圖2所示,將直流電源36之按鈕開關360設成為ON狀態,從直流電源36經由第1配線37對靜電夾頭座3供給電力。使電流流向圖2所示的箭頭R1方向,並將預定之直流電壓(例如,5000V之直流電壓)施加至金屬板34,藉此,在金屬板34上之晶圓保持部31的介電質層與晶圓W之間產生介電極化現象,進而將正(+)電荷集中於晶圓保持部31的保持面31a附近。又,由於成為靜電夾頭座3與導電性晶圓保持墊70經由晶圓W連接的狀態,因此,經由第2配線72及由導電體所形成的吸附部700,對晶圓W供給負
(-)電荷,藉此,晶圓W,係帶有與保持面31a相反極性的負電。因此,藉由作用於晶圓W與保持面31a之間的靜電力,晶圓W,係被吸附保持於保持面31a上。另外,在圖2中,係省略表示減壓室6等的構成。
例如,電壓計84在電阻81之兩端測定「對晶圓W供給負(-)電荷之際的施加至電壓測定手段8之電阻81」的電壓(過度電壓)。由電壓計84所測定之施加至電阻81的電壓,係在從恆定電壓急遽上升至過度電壓附近後,逐漸下降而返回至恆定電壓。例如,在電壓計84,係連接有控制部9,電壓計84,係將關於施加至該電阻81之電壓之變化的資訊發送至控制部9,控制部9,係從該電壓之變化來計測晶圓W的帶電量。控制部9,係從計測之晶圓W的帶電量之值,判斷「充分帶有負電的晶圓W被靜電夾頭座3之保持面31a確實吸附保持」的狀態,且將該判斷結果發布至外部。
在確認了靜電夾頭座3充分吸附晶圓W後,停止吸引源71所致之吸引,並使晶圓W自導電性晶圓保持墊70的保持面700a脫離。而且,導電性晶圓保持墊70,係從圖1所示之減壓室6內立即退避。藉由導電性晶圓保持墊70退避的方式,晶圓W,雖係成為未接地的狀態,但晶圓保持部31之保持面31a附近的電荷不會立即消失,又,晶圓W之帶電狀態不會立即被解除。因此,靜電力所致之吸附力充分殘留於保持面31a與晶圓W之間。
以擋板62a關閉減壓室6之搬入搬出口62,並藉由減壓
手段64對減壓室6內進行減壓排氣而成為真空狀態。而且,在使氣體噴出頭2下降後,從反應氣體供給源25對氣體噴出頭2內之氣體導入路徑21a供給蝕刻氣體,且從各氣體吐出路徑21b之開口朝向被吸附保持於靜電夾頭座3之晶圓W的背面Wb整面均勻地噴出。
將蝕刻氣體導入減壓室6內,並且從高頻電源28對氣體噴出頭2施加高頻電力,在氣體噴出頭2與靜電夾頭座3之間產生高頻電場,使蝕刻氣體電漿化。經電漿化之蝕刻氣體,係對晶圓W的背面Wb進行蝕刻。又,由於藉由電漿之產生,晶圓W再次成為接地之狀態,因此,維持靜電夾頭座3充分吸附晶圓W的狀態。
在適當進行晶圓W之背面Wb的電漿蝕刻後,停止對氣體噴出頭2之高頻電力的施加,藉由減壓手段64將減壓室6內之蝕刻氣體從排氣口64a排出,從而成為減壓室6之內部不存在蝕刻氣體的狀態。其次,開啟搬入搬出口62之擋板62a,藉由搬送手段7將晶圓W自減壓室6內的靜電夾頭座3搬出。在此,以下說明關於實施本發明之晶圓的搬出入方法,而將由靜電夾頭座3所保持的晶圓W自靜電夾頭座3上搬出之情形的各步驟。
首先,如圖3所示,停止對靜電吸附了晶圓W之靜電夾頭座3施加電壓。亦即,將直流電源36之按鈕開關360設成為OFF狀態,停止從直流電源36經由第1配線37對靜電
夾頭座3供給電力。即便停止對靜電夾頭座3施加電壓,晶圓保持部31之保持面31a附近的正(+)電荷亦不會立即消失,又,晶圓W之負電位的帶電狀態不會立即被解除。
使導電性晶圓保持墊70朝被吸附保持於減壓室6內之(在圖3中,係未圖示)靜電夾頭座3的晶圓W上移動,並使導電性晶圓保持墊70與晶圓W的位置對齊。而且,使導電性晶圓保持墊70下降,並使晶圓W的背面Wb與導電性晶圓保持墊70的保持面700a接觸。
例如,在使導電性晶圓保持墊70接觸於晶圓W後,吸引源71進行吸引,藉此,如圖3所示,晶圓W被吸引保持於導電性晶圓保持墊70的保持面700a。
有在使導電性晶圓保持墊70上升而使晶圓W自靜電夾頭座3之保持面31a脫離時產生帶電的情形。當產生被稱為所謂剝離帶電的現象時,則導致晶圓W脫離後之靜電夾頭座3帶有保持面31a的正(+)電荷,脫離之晶圓W帶有負(-)電荷。因此,在本發明之晶圓的搬出入方法中,係如圖3所示,將開關33a設成為ON狀態,從直流電源32經由第3配線33、連接點37a及第1配線37對靜電夾頭座3供給電
力。使電流流向圖2所示的箭頭R2方向,並且將預定之直流電壓(例如,-5000V之直流電壓)施加至靜電夾頭座3內的金屬板34,亦即,先施加與由靜電夾頭座3吸附保持了晶圓W之際的施加電壓相反極性之電壓作為消除剝離帶電的除電電壓,藉此,靜電夾頭座3之保持面31a附近的帶電電位從正電位變化成負電位。又,伴隨於此,晶圓W之除電速度亦被加快,負(-)電荷從晶圓W被充分去除。另外,除電電壓之電壓值及施加時間,係因應殘留於晶圓W及靜電夾頭座3之電荷的量而調整。
例如,在實施除電電壓施加步驟後,如圖4所示,空氣供給源38經由空氣供給路徑38a對靜電夾頭座3之保持面31a進行空氣的供給,並使空氣自空氣噴出口31b噴出。藉由該空氣之噴射壓力,將晶圓W自保持面31a舉起,並排除殘留於靜電夾頭座3的保持面31a與晶圓W之間的真空吸附力,藉此,在後述的脫離步驟中,可在晶圓W自靜電夾頭座3脫離之際,防止晶圓W破損的情形。
其次,使吸引保持晶圓W之導電性晶圓保持墊70上升,將晶圓W自施加除電電壓之狀態的靜電夾頭座3搬出。此時,藉由除電電壓之施加,由於靜電夾頭座3之保持面31a附近的帶電電位,係變化成負電位,因此,可抑
制保持面31a與被充分除電的晶圓W或殘存有負(-)電荷的晶圓W之間產生剝離帶電。而且,在晶圓W自保持面31a脫離後,將直流電源32之開關33a設成為OFF狀態,停止對靜電夾頭座3之除電電壓的施加。
如此一來,由於本發明之晶圓之搬出入方法,係具備有:電壓施加停止步驟,對施加電壓而靜電吸附了晶圓W之靜電夾頭座3,停止電壓的施加;除電電壓施加步驟,在實施電壓施加停止步驟後,為了靜電吸附晶圓W,而使與在靜電夾頭座3流動之電流相反方向的電流流動,並將消除剝離帶電的除電電壓施加至靜電夾頭座3;及脫離步驟,在實施除電電壓施加步驟後,在除電電壓被施加至靜電夾頭座3的狀態下,使晶圓W自靜電夾頭座3上脫離,因此,在使晶圓W自靜電夾頭座3上脫離之前,將消除剝離帶電的除電電壓施加至靜電夾頭座3,藉此,使靜電夾頭座3成為帶有與因剝離帶電而產生之帶電相反極的電性,可防止晶圓搬出時之剝離帶電的產生,並防止晶圓脫離後之靜電夾頭座3成為保持帶電的狀態。因此,可在藉由靜電夾頭座3保持下一個晶圓W之際,防止產生靜電夾頭座3之靜電吸附力下降這樣的事態。
3:靜電夾頭座
7:搬送手段
8:電壓測定手段
9:控制部
30:基軸部
31:晶圓保持部
31a:保持面
32:直流電源
33:第3配線
33a:開關
34:金屬板
36:直流電源
37:第1配線
37a:連接點
38:空氣供給源
38a:空氣供給路徑
39:冷卻水供給手段
70:導電性晶圓保持墊
71:吸引源
72:第2配線
79:臂部
80:電阻
81:電阻
84:電壓計
360:按鈕開關
700:吸附部
700a:保持面
701:框體
W:晶圓
Wa:晶圓之表面
Wb:晶圓之背面
Claims (3)
- 一種晶圓之搬出入方法,係將晶圓搬入靜電夾頭座上,又,將由該靜電夾頭座所保持之晶圓自該靜電夾頭座上搬出,該晶圓之搬出入方法,其特徵係,具備有:連接步驟,將由連接有電壓測定手段之導電性晶圓保持墊所吸引保持的晶圓載置於該靜電夾頭座之保持面,並且經由晶圓連接該靜電夾頭座與該導電性晶圓保持墊;確認脫離工程,在實施該連接步驟後,將電壓施加至該靜電夾頭座且將電荷供給至晶圓而使晶圓帶電,並且從對晶圓供給該電荷之際的施加至該電壓測定手段之電阻的電壓之變化,計測晶圓的帶電量,在從晶圓之該帶電量的值確認了晶圓確實被吸附保持於該靜電夾頭座後,使該導電性晶圓保持墊自晶圓脫離;電壓施加停止步驟,在實施該確認脫離工程及晶圓的加工後,對施加該電壓而靜電吸附了晶圓之該靜電夾頭座,停止該電壓的施加;除電電壓施加步驟,在實施該電壓施加停止步驟後,為了靜電吸附晶圓,而使與在該靜電夾頭座流動之電流相反方向的電流流動,並將消除剝離帶電的除電電壓施加至該靜電夾頭座;及脫離步驟,在實施該除電電壓施加步驟後,在該除電電壓被施加至該靜電夾頭座的狀態下,使晶圓自該靜電夾頭座上脫離。
- 如申請專利範圍第1項之晶圓之搬出入方法,其中,前述靜電夾頭座,係具有:空氣噴出口,開口於保持晶圓的前述保持面;及空氣供給路徑,一端連通於該空氣噴出口,並且另一端被連接於空氣供給源,該晶圓之搬出入方法,係更具備有:送風步驟,在實施前述除電電壓施加步驟後且實施前述脫離步驟之前,使空氣自該空氣噴出口噴出。
- 如申請專利範圍第1或2項之晶圓之搬出入方法,其中,更具備有:保持墊接觸步驟,在實施前述除電電壓施加步驟之前,使前述導電性晶圓保持墊與前述靜電夾頭座上的晶圓接觸;及保持步驟,在實施該保持墊接觸步驟後,以該導電性晶圓保持墊來保持晶圓直至實施前述送風步驟為止。
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