JP5822823B2 - 膜厚不均一性および粒子性能を改善するcvd装置 - Google Patents
膜厚不均一性および粒子性能を改善するcvd装置 Download PDFInfo
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- JP5822823B2 JP5822823B2 JP2012507307A JP2012507307A JP5822823B2 JP 5822823 B2 JP5822823 B2 JP 5822823B2 JP 2012507307 A JP2012507307 A JP 2012507307A JP 2012507307 A JP2012507307 A JP 2012507307A JP 5822823 B2 JP5822823 B2 JP 5822823B2
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- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
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- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/6719—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the processing chambers, e.g. modular processing chambers
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- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
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- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
- C23C16/4409—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber characterised by sealing means
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45512—Premixing before introduction in the reaction chamber
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45561—Gas plumbing upstream of the reaction chamber
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68742—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a lifting arrangement, e.g. lift pins
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
Description
Claims (14)
- 下部アセンブリおよび前記下部アセンブリにヒンジを介して可動結合された上部アセンブリを有するプロセスチャンバであって、前記下部アセンブリが、基板支持アセンブリが中に配置されたチャンバ本体を含み、前記上部アセンブリが蓋を含む、プロセスチャンバと、
ガスパネルから前記プロセスチャンバの内側までのガスの流れを助長するための、前記チャンバ本体および前記蓋に結合されたガスフィードスルーであって、前記蓋に結合された上部本体、および前記チャンバ本体に結合された下部本体を備えており、前記ガスフィードスルーは前記チャンバ本体及び前記蓋を通り抜けないように、前記チャンバ本体及び前記蓋の外部に設けられ、前記上部本体が1つまたは複数の上部ポートを含み、前記下部本体が、対応する1つまたは複数の下部ポートを含み、前記蓋が閉じた位置にあるとき、前記1つまたは複数の上部ポートが、対応する1つまたは複数の下部ポートと結合するガスフィードスルーと
を備え、
対応する各対の前記上部本体および下部本体の少なくとも一方が、前記蓋が閉じた位置にあるとき、前記上部本体と下部本体との結合を微調整しやすいように調整可能である、基板処理装置。 - 前記蓋の上面に沿って前記ガスフィードスルーから、前記蓋の入口ポート上方に配置された蓋マニホルドまで延びるアームと、
前記ガスフィードスルーの前記1つまたは複数の上部ポートから、前記蓋マニホルドの中央かつ前記蓋の入口ポート上方に配置された前記蓋マニホルドの開口まで、ガスの流れを助長する前記アームの中に配置された単一の導管と
をさらに備える、請求項1に記載の装置。 - 前記単一の導管が、前記蓋マニホルドに入るガスが渦を生じやすいように前記蓋マニホルドにおいて非垂直に終端している、請求項2に記載の装置。
- 前記ガスフィードスルーの前記上部本体の前記1つまたは複数の上部ポートと前記単一の導管との間に配置されて、前記単一の導管に入る前のガスを混合するための混合器
をさらに含む、請求項2または3に記載の装置。 - 前記蓋マニホルドの前記開口の上方に配置された出口を有し、前記蓋マニホルドの上面に接触する遠隔プラズマ源と、
前記遠隔プラズマ源の出口と前記蓋マニホルドの前記上面との間に配置されたガスケットにクランプ力を作用させるために、前記遠隔プラズマ源の前記出口および前記蓋マニホルドの付近に配置されたクランプと
をさらに備える、請求項2から4のいずれか一項に記載の装置。 - 前記遠隔プラズマ源を前記蓋に固定するために、前記遠隔プラズマ源の前記出口付近に配置された1つまたは複数の支持ブラケット
をさらに備える、請求項5に記載の装置。 - 前記単一の導管を通って流れるガスに熱を供給するために前記アームの中または上に配置されたヒータと、
前記導管を通って流れるガスの温度に対応するデータを供給するためのセンサと
をさらに備える、請求項2から6のいずれか一項に記載の装置。 - 前記アームが前記蓋の前記上面から間隔をおいて配置されている、請求項7に記載の装置。
- 前記蓋が、
前記蓋の入口ポートの周囲を囲み、前記蓋の下面から前記基板支持アセンブリに向かって延びる面板延長部と、
前記蓋の前記下面と反対側の前記面板延長部に結合された面板であって、前記蓋の前記下面、前記面板延長部、および当該面板の間に混合領域を画定する面板と
をさらに備えており、
前記蓋の前記下面に対向する前記面板の表面が、前記面板と前記面板延長部の間の境界面の陽極酸化されていない外側部分と、前記面板の陽極酸化された内側部分とを含んでいる、請求項1から8のいずれか一項に記載の装置。 - 前記上部アセンブリが、
前記蓋を前記チャンバ本体に結合する蓋支持アセンブリであって、前記チャンバ本体に結合された1対の下部アーム、および前記蓋に結合された1対の上部アームを備え、前記1対の下部アームと前記1対の上部アームが互いに結合されてヒンジを形成しており、かつ前記蓋が前記ヒンジに対して浮動して前記蓋と前記チャンバ本体との位置合わせを改善しやすくするように前記蓋を支持する前記蓋支持アセンブリを更に備えている、請求項1から9のいずれか一項に記載の装置。 - 前記蓋支持アセンブリが、
前記蓋を前記蓋支持アセンブリに固定するために、前記蓋支持アセンブリの前記上部アームの各々に1つの支持板がそれぞれ配置されている1対の蓋支持板と、
前記蓋支持板の各々に結合されて、前記蓋支持板の各々から垂直に延びる複数の蓋支持ピンであって、前記蓋を貫通して延び、前記複数の蓋支持ピンに沿った前記蓋の直線移動を助長する前記複数の蓋支持ピンと
をさらに備えている、請求項10に記載の装置。 - 前記基板支持アセンブリが、
基板支持部と、
前記基板支持部を昇降および回転させるように前記チャンバ本体の基部の下に懸架され、かつ前記基板支持部に結合された回転リフトアセンブリであって、
前記チャンバ本体の前記基部を貫通する孔を通って延びるシャフトを介して、前記チャンバ本体内の前記基板支持部に結合されたシャフトにより、前記基板支持部を支持するフレームであって、前記シャフトの回転により前記基板支持部が回転するフレームと、
前記シャフトの軸から外れて前記フレームに結合されて、前記基板支持アセンブリを昇降させるように前記フレームおよび前記基板支持アセンブリを移動させるリフト機構と
を備えた回転リフトアセンブリと
を更に備えている、請求項1から11のいずれか一項に記載の装置。 - 前記回転リフトアセンブリが、
前記フレームを前記チャンバ本体の前記基部に結合する水平板と、
前記水平板を前記チャンバ本体の前記基部から懸架するために、前記水平板の一方の端部に近接して配置された玉継ぎ手と、
前記水平板および回転リフトアセンブリを前記チャンバ本体の前記基部に対して水平にするために前記水平板の対向面に配置された水平調整植込みボルトと
をさらに備えている、請求項12に記載の装置。 - 前記基板支持アセンブリが、
基板支持部と、
前記基板支持部を昇降および回転させるように前記チャンバ本体の基部の下に配置され、かつ前記基板支持部に結合された回転リフトアセンブリと、
前記基板支持アセンブリを、上に配置される基板の表面に平行な平面内で移動させるために、前記プロセスチャンバの基部の下に配置されたx−y調整機構と
をさらに備えている、請求項1から13のいずれか一項に記載の装置。
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US17113209P | 2009-04-21 | 2009-04-21 | |
US61/171,132 | 2009-04-21 | ||
US12/763,522 US9312154B2 (en) | 2009-04-21 | 2010-04-20 | CVD apparatus for improved film thickness non-uniformity and particle performance |
US12/763,522 | 2010-04-20 | ||
PCT/US2010/031723 WO2010123877A2 (en) | 2009-04-21 | 2010-04-20 | Cvd apparatus for improved film thickness non-uniformity and particle performance |
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JP2012525005A JP2012525005A (ja) | 2012-10-18 |
JP5822823B2 true JP5822823B2 (ja) | 2015-11-24 |
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JP2012507307A Expired - Fee Related JP5822823B2 (ja) | 2009-04-21 | 2010-04-20 | 膜厚不均一性および粒子性能を改善するcvd装置 |
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US (1) | US9312154B2 (ja) |
JP (1) | JP5822823B2 (ja) |
KR (1) | KR101671158B1 (ja) |
CN (1) | CN102414794B (ja) |
SG (2) | SG10201401671SA (ja) |
TW (1) | TWI499688B (ja) |
WO (1) | WO2010123877A2 (ja) |
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CN102414794B (zh) | 2015-01-28 |
CN102414794A (zh) | 2012-04-11 |
TWI499688B (zh) | 2015-09-11 |
JP2012525005A (ja) | 2012-10-18 |
KR20120027257A (ko) | 2012-03-21 |
SG10201401671SA (en) | 2014-07-30 |
KR101671158B1 (ko) | 2016-11-01 |
TW201105815A (en) | 2011-02-16 |
US20100294199A1 (en) | 2010-11-25 |
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