CN1898412A - 用于涂覆切削刀具的载体和方法 - Google Patents
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- 238000005520 cutting process Methods 0.000 title claims abstract description 90
- 239000011248 coating agent Substances 0.000 title claims abstract description 28
- 238000000576 coating method Methods 0.000 title claims abstract description 28
- 238000000034 method Methods 0.000 title claims abstract description 23
- 239000000463 material Substances 0.000 claims abstract description 27
- 229910052751 metal Inorganic materials 0.000 claims abstract description 13
- 239000002184 metal Substances 0.000 claims abstract description 13
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical group [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 9
- 229910052799 carbon Inorganic materials 0.000 claims abstract description 8
- 229910052757 nitrogen Chemical group 0.000 claims abstract description 8
- 230000000737 periodic effect Effects 0.000 claims abstract description 8
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- 150000002739 metals Chemical class 0.000 claims abstract description 6
- 239000000758 substrate Substances 0.000 claims description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 16
- 239000010410 layer Substances 0.000 description 14
- 238000004519 manufacturing process Methods 0.000 description 12
- 229910002804 graphite Inorganic materials 0.000 description 11
- 239000010439 graphite Substances 0.000 description 11
- 238000000151 deposition Methods 0.000 description 4
- 239000000969 carrier Substances 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 230000001788 irregular Effects 0.000 description 2
- 229910008484 TiSi Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 230000002146 bilateral effect Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- RKTYLMNFRDHKIL-UHFFFAOYSA-N copper;5,10,15,20-tetraphenylporphyrin-22,24-diide Chemical compound [Cu+2].C1=CC(C(=C2C=CC([N-]2)=C(C=2C=CC=CC=2)C=2C=CC(N=2)=C(C=2C=CC=CC=2)C2=CC=C3[N-]2)C=2C=CC=CC=2)=NC1=C3C1=CC=CC=C1 RKTYLMNFRDHKIL-UHFFFAOYSA-N 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 239000002537 cosmetic Substances 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000007790 scraping Methods 0.000 description 1
- 238000005480 shot peening Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
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Abstract
本发明涉及一种用于涂覆切削刀具的载体和方法，该刀具用于除去切屑。该载体适于以CVD和/或MTCVD方法涂覆切削刀片期间使用。该载体至少部分地由选自MAX相族的材料形成，所述MAX相族即Mn+1AXn (n＝1、2、3)，其中M是选自元素周期表的族IIIB、IVB、VB、VIB和VIII的一种或多种金属和/或它们的混合物，A是选自元素周期表的族IIIA、IVA、VA和VIA的一种或多种金属和/或它们的混合物，并且X是碳和/或氮。
Description
技术领域
本发明涉及一种根据所附独立权利要求前序部分的用于涂覆切削刀具刀片(可转位切削刀片)的载体和方法，该刀具用于除去切屑。
背景技术
CVD(化学气相沉积)沉积的耐磨层，特别是硬质合金切削刀片上的TiC、Ti(C，N)、TiN和Al2O3涂层在工业上已经有30年的生产时间了。在有关文献以及专利中已经广泛讨论了关于CVD和/或MTCVD(中温化学气相沉积)涂层的沉积条件以及基于CVD和/或MTCVD的涂层设计的细节。
CVD和/或MTCVD技术的其中一个主要优点在于能够在同一批次中涂覆很大数目的刀具，根据刀片尺寸以及所使用的设备，可涂覆达30,000个切削刀片，这对于围绕切削刀片进行完全涂覆的每个切削刀片而言给出较低的生产成本。为了实现均匀的涂层厚度分布，重要的是，在涂覆操作期间切削刀片的功能表面相对等间隔地分布。然而，在涂覆操作期间，不仅刀具被涂覆，而且切削刀片所置放于其上的支撑件也被涂覆，从而导致刀片与支撑件的表面一起成长。当在涂覆循环结束之后将刀片移除时，在那些位置处将呈现出接触标记。
这些接触标记不仅是一种表面问题。如果它们形成于在金属切削操作期间实际上进行操作的表面上，则它们将导致刀具寿命降低。此外，刀片的支撑表面应该是平坦的，没有突出的标记，以便避免切削刀片在刀架中的错误定位。定位错误的切削刀片将不利地影响到刀具的性能，即弱化的韧性、降低的精确度以及工件表面的精加工程度。为了减轻接触标记的负面影响，已经提出多种复杂的布置，其目的在于将所述标记从功能表面转移到其它区域。
对CVD和/或MTCVD涂覆的刀片进行分批装载的这种系统的另一个重要的方面在于，该系统应该非常灵活以适应切削刀片几何形状的差异。典型的标准CVD和/或MTCVD涂层可被沉积到其内接圆从5mm变化到50mm的不同尺寸的切削刀片上。切削刀片的基本形状可改变，例如它们可以是矩形的、八边形的、四方形的、圆形的、三角形的或者菱形的等。切削刀片可被制成为具有或者不具有中心孔，并且具有从2mm到厚达10mm变化的不同厚度。因此CVD和/或MTCVD涂覆循环的一种形式将被涂覆到具有多达数百种的不同几何形状的切削刀片上，它们均需要不同的布置。因此，需要用于不同切削刀片几何形状的不同布置以便获得均匀装载密度的分批装载系统，在注重较低成本以及较短交付周期的生产环境中将绝对不会非常合理地进行工作。
EP454,686公开了一种特别用于PACVD的装载系统，其中将切削刀片在具有或者不具有中间间隔件的中心插脚上彼此堆叠。如上所述的，由于它基本上不是一种通用的方法，使用这种用于CVD和/或MTCVD的方法将具有多个缺点，因为不同几何形状的切削刀片将需要不同的插脚结构。第二，在切削刀片上需要具有孔洞。第三，当施加厚的CVD和/或MTCVD涂层时，切削刀片将可能牢固地的黏附到间隔件和/或其它切削刀片上，这是由于来自所堆叠的切削刀片的压力将增强它们生长在一起的趋势。
US 5,576,058公开了一种分批装载系统，该系统是基于不同的销钉布置，该销钉包括脚部、肩部、颈部和头部。
一种通常使用的装载布置是将切削刀片放置在托盘的孔或者缝中。该方法将在切削刀片的切削刃或者间隙表面上形成接触标记。该布置在运输以及装入托盘期间需要非常小心的操作以便避免切削刀片从其所处位置处脱落。当使用自动切削刀片安置时，该布置也非常难以使用，因为切削刀片会被放置到非常不稳定的位置中。
在另一种方法中，将切削刀片拧到杆上。这些杆可以如在EP454,686中那样被竖直地布置，其具有如上所述的相同缺点，或者被水平地布置。水平布置方式的主要缺点在于关于不同的切削刀片几何形状缺少通用性，因为必须要求有很大数目的不同结构以生产所有几何形状的切削刀片。此外，该方法仅能被用于具有孔的切削刀片。
最为通用的布置是基于或者在编织金属网上或者在某种其它表面(经常由石墨制成)上，以必要的间隔简单地将切削刀片放置到表面上。通过以间隔件或者使用将金属网放置于其上的石墨载体进行金属网分隔地彼此堆积而逐步建立该批次。迄今为止该方法的重大缺陷在于总是在金属网和切削刀片之间形成的接触标记。这些标记使得切削刀片在刀架中的定位不准确并且可导致切削刀片的性能严重降低。经常需要某种后处理例如研磨以便去除突起的标记。而且还会在切削刃上观察到所述标记，它们对于切削刀片性能也是非常不利的。与使用编织网有关的另一个缺点在于，在进行沉积之前，切削刀片能够比较容易地滑动到一起，由此导致在切削刀片上留下未被涂覆的区域。
发明内容
本发明的一个目的在于提供一种能够在涂覆期间避免在切削刀片上形成接触标记的载体。
本发明的另一个目的在于提供一种能够在涂覆期间避免在切削刀片上形成隆起的载体。
本发明的另一个目的在于提供一种能够在涂覆期间避免在切削刀片上形成隆起的方法。
通过一种具有在所附独立权利要求的特征部分中所限定特征的方法和载体实现了本发明的目的。
在下面的描述中，使用下述的术语：预涂层被定义为，在第一次将耐磨CVD和/或MTCVD层沉积到最终产品上之前(在这里将其定义成生产涂层，施加到编织网或者支撑材料上的CVD层和/或MTCVD层。
附图说明
图1A示出可用于支撑切削刀片的根据本发明的载体的不同几何形状的实例的截面；
图1B示出图1A中的一些实例的立体图；
图2A示出根据本发明的载体的六个实例的侧视图，这些载体具有在涂覆操作期间能够用在用于单侧切削刀片的载体中的表面图案；
图2B示出用于涂覆单侧切削刀片的根据本发明的另一件载体实例的立体图。
具体实施方式
如在这里所使用的“MAX相族(MAX phase family)”指的是一种包括Mn+1AXn(n＝1、2、3)的材料，其中M是选自元素周期表的族IIIB、IVB、VB、VIB和VIII的一种或多种金属和/或它们的混合物，A是选自元素周期表的族IIIA、IVA、VA和VIA的一种或多种金属和/或它们的混合物，并且其中X是碳和/或氮。
Ti3SiC2是MAX相族的一种材料并且因其卓越的特性而公知。其易于加工、坚硬、能够抵抗热冲击、可承受损伤、坚韧、耐高温、耐氧化并且耐腐蚀。然而，其具有Ti金属的密度。该材料被考虑用于多种应用，例如电加热器(WO 02/51208)、与熔融金属相接触(US2003075251)以及用于涂覆切削刀片(SE 0202036-0)。
根据本发明，已经意外发现，如果接触或者间接接触刀片的表面和/或载体(例如，棱椎、锥体等)包括一种选自MAX相族的材料，则可能避免形成大的接触标记并且特别是突起标记。与切削刀片相接触的载体的特性基本消除了现有技术中的问题。
根据本发明，用以与切削刀片直接或者间接接触的材料基本由如上所定义的MAX相族的一种材料构成，该材料的重量百分比优选高于85wt％。
在一个实施例中，一种或者多种金属M选自元素周期表的族IVB、VB和VIB。
在另一个实施例中，一种或多种元素A为Si、Al、Ga或Ge。
在又一个实施例中，该MAX相的形式为在Mn+1AXn中，n＝2。
在另一个优选实施例中，该MAX相基本由优选至少为85wt-％的Ti3SiC2构成，余量为TiC、TiSi2、Ti5Si3或者SiC中的一种或多种。
该材料由本技术领域中所公知的方法制成，例如如在US5,942,455中公开的方法。
载体可制成为具有不同的几何形状以便适合实际的切削刀片几何形状，见图1A和1B，其中A、B、C、D和E描绘了示于这两个图中的形状。每个载体具有基底或者主表面以接触未示出的支撑体。通常切削刀片放在载体上，同时载体的一个部分突出进入切削刀片的孔中。在其中一个实例中的虚线描绘出所涂覆的双侧切削刀片。应该指出在大多数情形中重力将切削刀片保持到载体上。对于具有中心孔的切削刀片，将形状优选制成为具有三个或更多个侧面的棱椎或者制成为锥体。棱椎的角部还可被10μm和2mm之间的半径所替代。具有或者不具有半径的棱椎还可被制成为具有凹形的和/或凸形中间侧部。为了保证尽可能的独立于切削刀片几何形状的通用几何形状，优选的是棱椎或者锥体的暴露侧面是直线形的或者制成为仅具有一个单独的半径，即如同喇叭一样的凹形或者如同子弹一样的凸形。
棱椎或者锥体可被截短到一定程度以便使得操作它们更加容易。被截短的棱椎或者锥体还可用于支撑下一个支撑体。
被截短的棱椎或者锥体还可被制成为具有中心孔以改进气流模式。棱椎或者锥体的理想的表面粗糙度也能提供优点。
对于单侧切削刀片，即其底侧永远不会用于操作中的刀片，切削刀片可以被直接定位到由选自MAX相族的材料形成的载体上。这将在切削刀片所抵靠于载体的侧面上形成较薄的层，但是由于该侧面不是功能性的侧面，该效果并不重要。因此该表面可被制成为具有或不具有孔的平坦表面或者有纹理的表面。有纹理的表面可被制成为高度和平面尺寸规则或者不规则变化的微观图案。图2A示出根据本发明的载体的六个实例的侧视图，这些载体具有在涂覆操作期间能够用在用于单侧切削刀片的载体中的表面图案。图2B示出用于涂覆单侧切削刀片的根据本发明的另一件载体实例的立体图。图2B可用于表示宏观或者微观几何形状。
一种优选的规则微观图案可以是具有三个或者更多个侧面的棱椎，其具有50μm和5mm之间的底部以及20μm和5mm之间的高度。用于实现50μm和500μm之间的Ra值的微观表面粗糙度的喷丸、刷试或者刮擦方法能够获得不规则图案。
在一个优选实施例中，在首次用于生产涂层之前，载体被预涂覆5到100μm厚的选自元素周期表的族IVB、VB和VIB的金属的氮化物和/或碳化物和/或氧化物的涂层。
在用作载体以支撑切削刀片进行生产涂层期间，在载体的顶部上将沉积出越来越厚的涂层。意外发现，该表面并不会对结果造成不利的影响。作为支撑材料的根据本发明的载体的寿命长于生产涂层寿命的50倍，并且有利特性没有任何的降低。
根据本发明，将切削刀片定位在由选自MAX相族的材料所制成的载体上。
已经参考切削刀片描述了本发明，但是显然本发明还可用于处理其它类型的涂覆部件例如钻头、端铣刀、耐磨件等。
至少在涂覆期间切削刀片将定位于其上的载体区域由选自MAX相族的材料形成。不同于整个载体基本由MAX相族的材料形成，还可考虑载体的至少一个表面和/或该表面下面的涂层至少部分地由选自MAX相族的材料形成。例如，由任意材料形成的载体可被涂覆至少一个由选自MAX相族的材料形成的表面层。该表面层应该足够的厚以便在涂覆切削刀片期间避免产生接触标记。载体表面层的厚度至少在25μm的量级。
实例1
见图1A和1B的试样A，具有10mm侧边的底部以及7mm的高度的直角四侧面棱椎由具有少量杂质的MAX相材料Ti3SiC2制成，下面称为试样A-MAX，以及还由石墨制成，称为试样A-石墨。将棱椎放置在具有3mm直径的规则设置的孔的平坦石墨托盘上。棱椎被预涂覆总厚度为25μm的Ti(C，N)+Al2O3+TiN的CVD层和MTCVD层。将用于P25应用领域的具有CNMG120408型几何形状的硬质合金切削刀片放置在所述两个试样的每个棱椎上。每种试样共使用100个棱椎。
在切削刀片上沉积具有大约15μm的总涂层厚度的Ti(C，N)+Al2O3+TiN的CVD/MTCVD生产涂层。
在涂覆之后，利用立体显微镜以10倍放大率检查所有切削刀片的标记。以没有可视标记、高度小于20μm的可视标记以及高度大于20μm的标记对这些标记进行分类。选择20μm的高度作为临界值是因为该数值是使得产品具有良好性能所能够被接受的最大值。
在施加预涂层(预涂覆)之后，在第一生产涂层循环中对所测量的切削刀片进行涂覆。下表1简要给出其结果。
表1
| 没有任何可视标记的刀片数目 | 具有低于20μm的可视标记的刀片数目 | 具有高于20μm的可视标记的刀片数目 | 粘附程度 | |
| 试样A-MAX(本发明) | 73 | 27 | 0 | 无 |
| 试样A-石墨(现有技术) | 0 | 62 | 38 | 粘附 |
可以清楚看出，尽管具有相同的载体几何形状，试样A-MAX比A-石墨具有更少的和更小的标记。而且，A-MAX的棱椎粘附程度更低。该实验表明了由选自MAX相族的材料构成的载体的优点。
实例2
使用其成分为91wt.％WC和9wt.％Co的具有XOMX0908-ME06型几何形状的单侧硬质合金切削刀片。在进行沉积之前，将未被涂覆的基底进行清洁。将具有大约5μm的总涂层厚度的Ti(C，N)+Al2O3+TiN的CVD生产涂层沉积到切削刀片上。
将切削刀片直接放置到类似于图1A中右下侧的但是更大的平坦托盘上。该托盘由石墨载体构成，主要包括Ti3SiC2并且具有少量杂质，称为试样A-MAX，以及还由石墨制成，称为试样A-石墨。该部分的厚度为5mm。在生产涂层中进行测试之前，该部分被预涂覆总厚度为20μm的Ti(C，N)+Al2O3+TiN的CVD层和MTCVD层。每种试样共使用100个切削刀片。
在生产涂层之后，根据实例1检查所有的切削刀片。
在施加预涂层之后，在第一生产涂层循环中对所测量的切削刀片进行涂覆。下表2简要给出其结果。
表2
| 没有任何可视标记的刀片数目 | 具有低于20μm的可视标记的刀片数目 | 具有高于20μm的可视标记的刀片数目 | 粘附程度 | |
| 试样A-MAX(本发明) | 88 | 12 | 0 | 无 |
| 试样A-石墨(现有技术) | 0 | 77 | 23 | 粘附 |
本发明的试样A-MAX清楚显示出最佳的结果，大部分的切削刀片完全没有任何标记，并且对于具有标记的切削刀片而言，标记小于20μm。同时在该实例中还可检测出在粘附程度方面的明显差异。
因此，本发明涉及利用硬质和耐磨耐火层以合理的和生产性的方式涂覆大量切削刀片的方法和载体。该方法是基于使用选自MAX相族的材料作为用于涂覆过程中的耐久支撑材料。以此方式，已经发现能够降低现有技术方法的缺陷，即减少接触标记。
Claims (10)
1.一种在利用CVD和/或MTCVD方法涂覆切削刀具刀片期间适于承载一个或多个切削刀片的载体，其特征在于，载体的至少一个表面和/或该表面下面的涂层至少部分地由选自MAX相族的材料形成，所述MAX相族即Mn+1AXn(n＝1、2、3)，其中M是选自元素周期表的族IIIB、IVB、VB、VIB和VIII的一种或多种金属和/或它们的混合物，A是选自元素周期表的族IIIA、IVA、VA和VIA的一种或多种金属和/或它们的混合物，并且X是碳和/或氮。
2.根据权利要求1所述的载体，其特征在于，至少在涂覆期间将切削刀片定位于其上的那部分载体区域由选自MAX相族的材料形成。
3.根据权利要求1或2所述的载体，其特征在于，整个载体基本由选自MAX相族的材料形成。
4.根据权利要求1或2所述的载体，其特征在于，载体的至少一个表面层基本由选自MAX相族的材料形成。
5.根据权利要求4所述的载体，其特征在于，该表面层足够的厚以便在涂覆切削刀具刀片期间避免产生接触标记，载体的所述表面层的厚度优选至少在25μm的量级。
6.根据权利要求1到4中任何一项所述的载体，其特征在于，该载体是具有三个或更多个侧面的棱椎或者锥体。
7.根据权利要求6所述的载体，其特征在于，棱椎或者锥体的暴露侧面是凸形的或者凹形的。
8.根据权利要求1到7中任何一项所述的载体，其特征在于，选自MAX相族的材料是Ti3SiC2。
9.一种用于涂覆切削刀具刀片的方法，该切削刀具刀片包括基底以及使用CVD和/或MTCVD方法沉积的涂层，其特征在于，在涂覆期间将切削刀片放置在如在权利要求1中所限定的载体上。
10.根据权利要求9所述的方法，其特征在于，所提供的基本由Ti3SiC2构成的载体是具有三个或更多个侧面的棱椎或者锥体，或者所提供的基本由Ti3SiC2构成的载体具有平坦表面，所述表面能够带有或不带有表面图案。
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| US6007916A (en) * | 1989-04-06 | 1999-12-28 | Sumitomo Electric Industries, Ltd. | Synthetic single crystal diamond for wiring drawing dies and process for producing the same |
| SE509984C2 (sv) * | 1994-03-18 | 1999-03-29 | Sandvik Ab | Chargeringssystem för CVD |
| US5942455A (en) * | 1995-11-14 | 1999-08-24 | Drexel University | Synthesis of 312 phases and composites thereof |
| JP3624628B2 (ja) * | 1997-05-20 | 2005-03-02 | 東京エレクトロン株式会社 | 成膜方法及び成膜装置 |
| US6231969B1 (en) * | 1997-08-11 | 2001-05-15 | Drexel University | Corrosion, oxidation and/or wear-resistant coatings |
| JP4547744B2 (ja) * | 1999-11-17 | 2010-09-22 | 東京エレクトロン株式会社 | プリコート膜の形成方法、成膜装置のアイドリング方法、載置台構造及び成膜装置 |
| US6712564B1 (en) * | 2000-09-29 | 2004-03-30 | Greenleaf Technology Corporation | Tool with improved resistance to displacement |
| AT5008U1 (de) * | 2001-02-09 | 2002-02-25 | Plansee Tizit Ag | Hartmetallverschleissteil mit mischoxidschicht |
| WO2003046247A1 (en) * | 2001-11-30 | 2003-06-05 | Abb Ab | METHOD OF SYNTHESIZING A COMPOUND OF THE FORMULA Mn+1AXn, FILM OF THE COMPOUND AND ITS USE |
-
2004
- 2004-12-13 WO PCT/SE2004/001857 patent/WO2005061759A1/en active Application Filing
- 2004-12-13 JP JP2006546895A patent/JP2007518878A/ja active Pending
- 2004-12-13 CN CNA2004800383376A patent/CN1898412A/zh active Pending
- 2004-12-13 EP EP04809043A patent/EP1709214A1/en not_active Withdrawn
- 2004-12-13 KR KR1020067012562A patent/KR20060123381A/ko not_active Application Discontinuation
- 2004-12-13 CZ CZ20060399A patent/CZ2006399A3/cs unknown
- 2004-12-22 US US10/905,226 patent/US20050132957A1/en not_active Abandoned
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101550545B (zh) * | 2009-04-30 | 2012-07-25 | 深圳市金洲精工科技股份有限公司 | 一种用于精密刀具金刚石涂层的刀柄插放装置及加工设备 |
| CN102534565A (zh) * | 2012-03-22 | 2012-07-04 | 株洲欧科亿硬质合金有限公司 | 一种涂层刀片生产用装载舟皿及其应用 |
| CN103726031A (zh) * | 2013-12-24 | 2014-04-16 | 成都工具研究所有限公司 | 化学气相沉积设备的工件装卡工具 |
| CN111549334A (zh) * | 2019-02-11 | 2020-08-18 | 肯纳金属公司 | 用于化学气相沉积涂层应用的支撑件 |
Also Published As
| Publication number | Publication date |
|---|---|
| US20050132957A1 (en) | 2005-06-23 |
| EP1709214A1 (en) | 2006-10-11 |
| WO2005061759A1 (en) | 2005-07-07 |
| KR20060123381A (ko) | 2006-12-01 |
| JP2007518878A (ja) | 2007-07-12 |
| CZ2006399A3 (cs) | 2006-09-13 |
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