KR20080058620A - 복수 개의 노즐들로 가스를 분할 공급하는 플라즈마 화학기상 증착 설비 - Google Patents

복수 개의 노즐들로 가스를 분할 공급하는 플라즈마 화학기상 증착 설비 Download PDF

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KR20080058620A
KR20080058620A KR1020060132505A KR20060132505A KR20080058620A KR 20080058620 A KR20080058620 A KR 20080058620A KR 1020060132505 A KR1020060132505 A KR 1020060132505A KR 20060132505 A KR20060132505 A KR 20060132505A KR 20080058620 A KR20080058620 A KR 20080058620A
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gas
nozzles
sources
supplying
plasma chemical
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정순빈
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세메스 주식회사
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    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563Gas nozzles
    • C23C16/45574Nozzles for more than one gas
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/513Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using plasma jets

Abstract

본 발명은 다수의 노즐들의 가스 공급을 분할 제어하는 플라즈마 화학 기상 증착 설비에 관한 것이다. 플라즈마 화학 기상 증착 설비는 서로 다른 가스를 공급하는 복수 개의 가스 공급원들과, 복수 개의 노즐들을 세트로 분할하고 각 세트의 노즐들로 서로 다른 가스를 분할 공급하는 가스 인젝터 및, 가스 공급원들과 가스 인젝터 사이에 구비되어 가스의 공급 유량을 정밀 조절하는 복수 개의 니들 밸브들을 포함한다. 따라서 본 발명에 의하면, 복수 개의 노즐들을 세트 단위로 분할하여 가스를 공급함으로써, 균일한 가스 분사가 가능하다.
플라즈마 화학 기상 증착 설비, 가스 인젝터, 노즐, 가스 공급원, 분할 제어

Description

복수 개의 노즐들로 가스를 분할 공급하는 플라즈마 화학 기상 증착 설비{PLASMA CHEMICAL VOPAR DEPOSITION EQUIPMENT FOR SUPPLYING TO DIVIDED GAS NOZZLES}
도 1은 일반적인 플라즈마 화학 기상 증착 설비의 개략적인 구성을 도시한 도면;
도 2는 도 1에 도시된 플라즈마 화학 기상 증착 설비의 가스 공급을 위한 일부 구성을 도시한 도면;
도 3은 본 발명에 따른 플라즈마 화학 기상 증착 설비의 가스 공급을 위한 일부 구성을 도시한 도면; 그리고
도 4는 도 3에 도시된 노즐들의 독립 제어를 위한 구성을 나타내는 도면이다.
* 도면의 주요 부분에 대한 부호 설명 *
100 : 플라즈마 화학 기상 증착 설비 110 : 챔버
120, 120a ~ 120c : 노즐 130 : 가스 인젝터
132 : 세트 140 : 니들 밸브
146 : 가스 공급 라인 150 ~ 154 : 실란 공급원
160 ~ 164 : 산소 공급원
본 발명은 반도체 제조 설비에 관한 것으로, 좀 더 구체적으로는 챔버로 다양한 가스를 분사하는 복수 개의 노즐들로 가스 공급을 분할 공급하기 위한 플라즈마 화학 기상 증착 설비에 관한 것이다.
도 1을 참조하면, 일반적으로 플라즈마 화학 기상 증착 설비(2)는 다양한 소스 가스들을 복수 개의 노즐(20)들을 통해 챔버(10) 내부로 공급된다. 챔버(10)는 상부 챔버(12)와 하부 챔버(14)로 이루어지며, 하부 챔버(14) 내부에는 웨이퍼가 안착되는 정전척(16)이 배치된다. 따라서 노즐(20)들은 상부 챔버(12)의 내측벽에 설치되는 가스 인젝터(gas injector)(미도시됨) 예를 들어, 가스 링(gas ring)에 구비된다. 즉, 가스 링은 노즐(20)들이 챔버(10) 내측벽 상단부에서 챔버(10) 내부의 공간을 향하도록 복수 개가 배치되며, 다양한 소스 가스들을 각각 공급하는 가스 공급원(도 2의 50, 52)들로부터 해당 소스 가스들을 공급받는다. 이 때, 노즐(20)은 복수 개가 균등한 간격으로 배치될 수 있으며, 노즐(10)들은 복수 개가 하나의 세트(set)(도 2의 30) 단위로 이루어져서 다양한 소스 가스를 분사한다.
도 2를 참조하면, 예를 들어, 플라즈마 화학 기상 증착 설비(2)는 웨이퍼 상에 실리콘 산화막(SiO2)을 증착하는 경우, 복수 개의 가스 공급원(50, 52) 즉, 하나의 산소(O2) 공급원(52)과, 하나의 실란(silane, SiH4) 공급원(50)이 각각 해당 노즐들과 연결되어 각각의 소스 가스들을 공급한다. 그리고 노즐(20)들과 가스 공 급원(50, 52)이 연결된 각각의 가스 공급 라인(44)에는 내부 통로를 개폐하는 개폐 밸브(42) 및 유량을 조절하는 유량 조절 밸브(40)가 설치된다.
그러나 이러한 플라즈마 화학 기상 증착 설비(2)는 각각의 소스 가스들을 분사하는 노즐(20)들을 소스 가스 별로 각각 하나로 통합하여 소스 가스를 공급한다. 즉, 복수 개의 노즐(20)들로 하나의 산소 공급원(52)과 하나의 실란 공급원(50)을 통해 산소 및 실란 가스를 각각 공급하므로, 증착 공정 시에 균일한 도포가 어렵고, 복수 개의 노즐(20)들로 공급되는 가스 유량을 미세 조정하기가 어려운 문제점이 있다.
본 발명의 목적은 균일한 가스 공급을 위하여 복수 개의 노즐들을 분할 제어하여 가스를 공급하는 플라즈마 화학 기상 증착 설비를 제공하는 것이다.
본 발명의 다른 목적은 동일한 가스를 분사하는 복수 개의 노즐들을 분할하여 가스를 공급하기 위한 플라즈마 화학 기상 증착 설비를 제공하는 것이다.
상기 목적들을 달성하기 위한, 본 발명의 플라즈마 화학 기상 증착 설비는 복수 개의 노즐들을 분할하여 가스를 공급하는데 그 한 특징이 있다. 이와 같이 플라즈마 화학 기상 증착 설비는 균일한 도포가 가능하다.
본 발명의 플라즈마 화학 기상 증착 설비는, 챔버와; 서로 다른 가스를 공급하는 복수 개의 가스 공급원들 및; 복수 개의 노즐들을 구비하고, 상기 노즐들을 복수 개의 세트 단위로 분할하고, 동일한 가스를 공급하는 상기 가스 공급원들로부 터 상기 각각의 세트들 중 적어도 하나의 세트의 동일한 가스를 분사하는 노즐들로 가스를 분할 공급하여 상기 챔버 내부로 가스를 분사하는 가스 인젝터를 포함한다.
일 실시예에 있어서, 상기 플라즈마 화학 기상 증착 설비는; 상기 가스 공급원들과 상기 가스 인젝터 사이의 가스 공급 라인에 구비되어 상기 가스 공급원들로부터 상기 노즐들로 공급되는 가스의 유량을 정밀 조절하는 복수 개의 니들 밸브들을 더 포함한다.
다른 실시예에 있어서, 상기 가스 공급원들은; 제 1 가스를 공급하는 복수 개의 제 1 가스 공급원들과, 제 2 가스를 공급하는 복수 개의 제 2 가스 공급원들을 포함한다.
이 실시예에 있어서, 상기 가스 인젝터는; 상기 제 1 가스 공급원에 연결되어 상기 제 1 가스를 상기 챔버로 분사하는 제 1 노즐과, 상기 제 2 가스 공급원에 연결되어 상기 제 2 가스를 상기 챔버로 분사하는 적어도 하나의 제 2 노즐을 포함하되, 상기 세트는 적어도 하나의 상기 제 1 노즐과 적어도 하나의 상기 제 2 노즐을 포함하며, 상기 제 1 및 상기 제 2 가스 공급원들은 상기 적어도 하나의 세트로 각각 상기 제 1 가스 및 상기 제 2 가스를 분할하여 공급한다.
이 실시예에 있어서, 상기 제 1 가스는 산소(O2)이고, 상기 제 2 가스는 실란(silane, SiH4)이다.
이 실시예에 있어서, 상기 제 1 가스 공급원은 상기 산소 가스를 공급하는 제 1 내지 제 3 산소 공급원과, 상기 제 2 가스 공급원은 상기 실란 가스를 공급하는 제 1 내지 제 3 실란 공급원을 포함한다. 여기서 상기 가스 인젝터는 상기 산소 가스를 분사하는 적어도 하나의 상기 제 1 노즐들과, 상기 실란 가스를 분사하는 적어도 하나의 제 2 노즐들을 포함하는 적어도 하나의 세트 단위로 상기 각각의 산소 공급원 및 상기 실란 공급원들로부터 상기 산소 가스 및 상기 실란 가스를 분할하여 공급받는다.
본 발명의 실시예는 여러 가지 형태로 변형될 수 있으며, 본 발명의 범위가 아래에서 서술하는 실시예로 인해 한정되어지는 것으로 해석되어서는 안된다. 본 실시예는 당업계에서 평균적인 지식을 가진 자에게 본 발명을 보다 완전하게 설명하기 위해서 제공되는 것이다. 따라서 도면에서의 구성 요소의 형상 등은 보다 명확한 설명을 강조하기 위해서 과장되어진 것이다.
이하 첨부된 도 3 및 도 4를 참조하여 본 발명의 실시예를 상세히 설명한다.
도 3은 본 발명에 따른 플라즈마 화학 기상 증착 설비의 가스 공급을 위한 일부 구성을 도시한 도면이다.
도 3을 참조하면, 플라즈마 화학 기상 증착 설비(100)는 복수 개의 가스 공급원(150 ~ 164)을 포함한다. 예를 들어, 산소 가스를 공급하는 제 1 내지 제 3 산소 공급원(160 ~ 164)들과, 실란 가스를 공급하는 제 1 내지 제 3 실란 공급원(150 ~ 154)들을 포함한다. 또 플라즈마 화학 기상 증착 설비(100)는 챔버(110) 내부로 다양한 소스 가스를 분사하는 복수 개의 노즐(120)들이 일정 간격으로 배치되는 가스 인젝터(130)와, 가스 공급원(150 ~ 164)들과 가스 인젝터(130) 사이의 가스 공급 라인(146)에 구비되어 공급되는 가스 유량을 각각 정밀 제어하는 니들 밸브(140)들을 포함한다. 또 가스 공급 라인(146)은 내부 통로를 개폐하는 개폐 밸 브(144)와, 가스 유량을 조절하는 유량 조절 밸브(142)를 더 포함한다.
가스 인젝터(130)는 복수 개의 노즐(120)들 중 예컨대, 3 개의 노즐을 하나의 세트(set)(132)로 배치하고, 전체 9 개의 세트로 구비된다. 또 각 세트(132)들 중 2 내지 3 세트들로 분할하여 각각의 가스 공급원 즉, 산소 공급원(160 ~ 164)과 실란 공급원(150 ~ 154)으로부터 각각의 소스 가스들을 공급받는다.
구체적으로 도 4를 참조하면, 가스 인젝터(130)는 챔버(110) 내부에 구비되고, 제 1 내지 제 3 노즐(120a ~ 120c)을 하나의 세트(132) 단위로 배치하여, 9 개의 세트를 구비한다. 제 1 노즐과 제 3 노즐(120a, 120c)은 실란 가스를 공급받아서 챔버(110) 내부로 분사하고, 제 2 노즐(120b)은 산소 가스를 공급받아서 챔버(110) 내부로 분사한다.
제 1 내지 제 3 실란 공급원(150 ~ 154)은 각 세트(132)들 예를 들어, 2 내지 3 개의 세트의 제 1 및 제 3 노즐(120a, 120c)과 각각 연결되고, 제 1 내지 제 3 산소 공급원(160 ~ 164)은 각 세트의 제 2 노즐(120b)과 각각 연결된다.
가스 공급 라인(146)은 가스 유량의 정밀 제어가 가능한 니들 밸브(140)들을 구비하여 분할된 각 세트(132)들로 공급되는 소스 가스를 균일하게 공급할 수 있다.
따라서 본 발명의 플라즈마 화학 기상 증착 설비(100)는 가스 인젝터(130)를 부분적으로 원하는 개수 만큼의 노즐(120)들로 분할하여 세트 단위로 개별적인 소스 가스를 공급함으로써, 증착 공정 시 균일성 유지하여 가스를 분사할 수 있도록 정밀 제어가 가능하다.
이상에서, 본 발명에 따른 플라즈마 화학 기상 증착 설비의 구성 및 작용을 상세한 설명과 도면에 따라 도시하였지만, 이는 실시예를 들어 설명한 것에 불과하며, 본 발명의 기술적 사상을 벗어나지 않는 범위 내에서 다양한 변화 및 변경이 가능하다.
상술한 바와 같이, 본 발명의 플라즈마 화학 기상 증착 설비는 복수 개의 가스 공급원들로부터 복수 개의 노즐들을 분할하여 가스를 공급함으로써, 증착 공정에 따른 균일한 가스 공급이 가능하고, 복수 개의 노즐들로 가스 공급을 위한 정밀 제어가 가능하다.

Claims (7)

  1. 플라즈마 화학 기상 증착 설비에 있어서:
    챔버와;
    서로 다른 가스를 공급하는 복수 개의 가스 공급원들 및;
    복수 개의 노즐들을 구비하고, 상기 노즐들을 복수 개의 세트 단위로 분할하고, 동일한 가스를 공급하는 상기 가스 공급원들로부터 상기 각각의 세트들 중 적어도 하나의 세트의 동일한 가스를 분사하는 노즐들로 가스를 분할 공급하여 상기 챔버 내부로 가스를 분사하는 가스 인젝터를 포함하는 것을 특징으로 하는 플라즈마 화학 기상 증착 설비.
  2. 제 1 항에 있어서,
    상기 플라즈마 화학 기상 증착 설비는;
    상기 가스 공급원들과 상기 가스 인젝터 사이의 가스 공급 라인에 구비되어 상기 가스 공급원들로부터 상기 노즐들로 공급되는 가스의 유량을 정밀 조절하는 복수 개의 니들 밸브들을 더 포함하는 것을 특징으로 하는 플라즈마 화학 기상 증착 설비.
  3. 제 1 항 또는 제 2 항에 있어서,
    상기 가스 공급원들은;
    제 1 가스를 공급하는 복수 개의 제 1 가스 공급원들과,
    제 2 가스를 공급하는 복수 개의 제 2 가스 공급원들을 포함하는 것을 특징으로 하는 플라즈마 화학 기상 증착 설비.
  4. 제 3 항에 있어서,
    상기 가스 인젝터는;
    상기 제 1 가스 공급원에 연결되어 상기 제 1 가스를 상기 챔버로 분사하는 제 1 노즐과, 상기 제 2 가스 공급원에 연결되어 상기 제 2 가스를 상기 챔버로 분사하는 적어도 하나의 제 2 노즐을 포함하되,
    상기 세트는 적어도 하나의 상기 제 1 노즐과 적어도 하나의 상기 제 2 노즐을 포함하며, 상기 제 1 및 상기 제 2 가스 공급원들은 상기 적어도 하나의 세트로 각각 상기 제 1 가스 및 상기 제 2 가스를 분할하여 공급하는 것을 특징으로 하는 플라즈마 화학 기상 증착 설비.
  5. 제 4 항에 있어서,
    상기 제 1 가스는 산소(O2)이고, 상기 제 2 가스는 실란(silane, SiH4)인 것을 특징으로 하는 플라즈마 화학 기상 증착 설비.
  6. 제 4 항에 있어서,
    상기 제 1 가스 공급원은;
    상기 산소 가스를 공급하는 제 1 내지 제 3 산소 공급원과, 상기 제 2 가스 공급원은 상기 실란 가스를 공급하는 제 1 내지 제 3 실란 공급원을 포함하는 것을 특징으로 하는 플라즈마 화학 기상 증착 설비.
  7. 제 6 항에 있어서,
    상기 가스 인젝터는;
    상기 산소 가스를 분사하는 적어도 하나의 상기 제 1 노즐들과, 상기 실란 가스를 분사하는 적어도 하나의 제 2 노즐들을 포함하는 적어도 하나의 세트 단위로 상기 각각의 산소 공급원 및 상기 실란 공급원들로부터 상기 산소 가스 및 상기 실란 가스를 분할하여 공급받는 것을 특징으로 하는 플라즈마 화학 기상 증착 설비.
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