JP5707766B2 - サセプタおよび半導体製造装置 - Google Patents
サセプタおよび半導体製造装置 Download PDFInfo
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- JP5707766B2 JP5707766B2 JP2010169815A JP2010169815A JP5707766B2 JP 5707766 B2 JP5707766 B2 JP 5707766B2 JP 2010169815 A JP2010169815 A JP 2010169815A JP 2010169815 A JP2010169815 A JP 2010169815A JP 5707766 B2 JP5707766 B2 JP 5707766B2
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- 239000004065 semiconductor Substances 0.000 title claims description 49
- 238000004519 manufacturing process Methods 0.000 title claims description 30
- 239000000758 substrate Substances 0.000 claims description 72
- 238000000034 method Methods 0.000 claims description 47
- 230000002093 peripheral effect Effects 0.000 claims description 41
- 238000010438 heat treatment Methods 0.000 claims description 7
- 230000007423 decrease Effects 0.000 claims description 2
- 238000009826 distribution Methods 0.000 description 14
- 230000000052 comparative effect Effects 0.000 description 9
- 238000004140 cleaning Methods 0.000 description 8
- 238000010586 diagram Methods 0.000 description 8
- 239000012495 reaction gas Substances 0.000 description 6
- 230000000694 effects Effects 0.000 description 5
- 239000007789 gas Substances 0.000 description 5
- 239000007788 liquid Substances 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 230000002411 adverse Effects 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 238000009751 slip forming Methods 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 238000003754 machining Methods 0.000 description 2
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 2
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- RBFQJDQYXXHULB-UHFFFAOYSA-N arsane Chemical compound [AsH3] RBFQJDQYXXHULB-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 1
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 1
- IBEFSUTVZWZJEL-UHFFFAOYSA-N trimethylindium Chemical compound C[In](C)C IBEFSUTVZWZJEL-UHFFFAOYSA-N 0.000 description 1
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Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
- C23C16/4586—Elements in the interior of the support, e.g. electrodes, heating or cooling devices
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/12—Substrate holders or susceptors
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- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystallography & Structural Chemistry (AREA)
- Mechanical Engineering (AREA)
- Chemical Vapour Deposition (AREA)
Description
10 サセプタ
11 凹部
12 溝
13 載置面
20 トレー
21 凹部
22 中心軸
30 ヒータ
100 基板
101 生成物
102 ヒロック
Claims (6)
- 基板上に半導体層を成膜する成膜工程で用いられるサセプタであって、
上面に、前記基板が載置される載置面を備え、
外周側面から前記載置面の外周縁の下方に至るまで延在し、その上下が壁で挟まれた溝をさらに有し、かつ前記載置面の反対の面が支持板の温度を上昇させる温度上昇部上に設けられた前記支持板の上面に載置されてなるサセプタ。 - 前記溝は、前記外周側面の全周に亘って連続的に形成されている請求項1記載のサセプタ。
- 前記溝の断面積は、前記外周側面からの距離が長くなるにつれて小さくなる請求項1または2に記載のサセプタ。
- 前記溝は、前記載置面に対して傾斜している請求項1〜3のいずれか1項に記載のサセプタ。
- 前記外周側面からの距離が異なる複数の前記溝を備える請求項1〜4のいずれか1項に記載のサセプタ。
- サセプタと、
前記サセプタを加熱する加熱部と、を備え、
前記サセプタは、上面に、基板が載置される載置面を備え、前記サセプタの外周側面から前記載置面の外周縁の下方に至るまで延在し、その上下が壁で挟まれた溝をさらに有し、
前記加熱部は、前記サセプタがその上面に載置される支持板と、前記支持板の温度を上昇させる温度上昇部と、を備える半導体製造装置。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2010169815A JP5707766B2 (ja) | 2010-07-28 | 2010-07-28 | サセプタおよび半導体製造装置 |
US13/190,710 US9487862B2 (en) | 2010-07-28 | 2011-07-26 | Semiconductor growing apparatus |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2010169815A JP5707766B2 (ja) | 2010-07-28 | 2010-07-28 | サセプタおよび半導体製造装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2012033574A JP2012033574A (ja) | 2012-02-16 |
JP5707766B2 true JP5707766B2 (ja) | 2015-04-30 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2010169815A Active JP5707766B2 (ja) | 2010-07-28 | 2010-07-28 | サセプタおよび半導体製造装置 |
Country Status (2)
Country | Link |
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US (1) | US9487862B2 (ja) |
JP (1) | JP5707766B2 (ja) |
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