CN103014846A - 一种材料气相外延用同心圆环喷头结构 - Google Patents
一种材料气相外延用同心圆环喷头结构 Download PDFInfo
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Abstract
本发明公开了一种材料气相外延用同心圆环喷头结构,解决在较大的衬底或多片衬底的晶体生长中,在大面积沉积区域提供前驱物混合气体的均匀流场问题。本发明包含有一个以上独立的进气管道,进气管道上设有监控调节进气流速和流量的控制器,喷头底部设有出气挡板,喷头内设有一个以上同心圆环,各同心圆环之间形成独立腔体并且相互隔离,各同心圆环顶端连接一个独立的进气管道,各同心圆环底端的出气挡板上设有一个及以上的出气孔。本发明通过各路气源彼此隔离并独立管控,以及多个喷头集成使用的方式,明显改善大面积沉底的生长晶体质量,大幅提高生产效率。
Description
技术领域
本发明涉及一种用于在衬底上化学气相沉积(CVD)的装置,特别涉及一种大面积均匀沉积的氢化物气相外延(HVPE)用的喷头设计。
背景技术
随着对于LED、LD、晶体管和集成电路的需求增加,沉积高质量Ⅲ族-氮化物薄膜的效率呈现出更大的重要性。氢化物气相外延(HVPE)技术具有生长速度快,生产成本低等特点,非常适用于Ⅲ族-氮化物半导体材料生长,比如氮化镓(GaN)晶片的大批量生产。为了增加产量和生产能力,期望在较大的衬底和/或多个衬底即在较大面积沉积区域之上前驱物均匀混合。这些因素非常重要,由于它直接影响生产成本和产品在市场中的竞争力。
目前氢化物气相外延(HVPE)用的喷头结构大多数为圆形结构,在小尺寸衬底或少数衬底的生长上具有一定优势。当衬底尺寸变大或个数增多即大面积范围沉积时,由于圆形喷头的结构限制,前驱物的混合不够均匀,或者覆盖面积过小,而不适合用于在大尺寸衬底或者多片衬底的同时生长上,目前半导体生长设备上的喷头结构在大尺寸/大沉积面积上的使用时具有严重局限性,现用喷头因其前驱物及其混合气体,在大面积衬底上沉积生长晶体时的均匀性不佳及生产效率过低,所以对氢化物气相外延(HVPE)用的喷头结构进行改进是十分有必要的。
发明内容
本发明的目地在于针对现有技术存在的不足,提供一种解决在较大的衬底或多片衬底的晶体生长中,在大面积沉积区域提供前驱物混合气体的均匀流场问题。本发明采用一种同心圆环喷头结构,使第一前驱物、第二前驱物、各种保护性气体以及载气在反应区域内充分混合后形成大面积范围的均匀流场。
为实现上述目的,本发明公开了一种插线式灯头座,通过以下的技术方案加以实现:
一种材料气相外延用同心圆环喷头结构,包含有一个以上独立的进气管道,进气管道上设有监控调节进气流速和流量的控制器,控制器监控管道内气体的流速、流量并调节使其均匀流场,喷头底部设有出气挡板,喷头内设有一个以上同心圆环,同心圆环为筒状,喷头内中心设有一中心圆环,中心圆环外的同心圆环的外壁与内壁顶端之间设有密封板,同心圆环的外壁与内壁底端之间设有出气挡板,同心圆环的外壁、内壁、密封板与出气挡板形成一立体的隔离区域,各同心圆环之间形成独立腔体并且相互隔离,各同心圆环顶端的密封板上连接一个独立的进气管道,各同心圆环底端的出气挡板上设有一个及以上的出气孔,喷头下面设有圆形反应腔,各独立的进气管道通入不同金属源或气体。
在其中一些实施例中,所述同心圆环个数根据前驱物及保护性气体数量同比设置。
在其中一些实施例中,所述进气管道的数量由衬底片的大小或数量来决定。
在其中一些实施例中,所述同心圆环的中心圆环的出气挡板上设有一个出气孔(喷口),外圈圆环的出气挡板上设有逐渐真多的多个出气孔(喷口),出气孔(喷口)的孔径根据前驱物及保护性气体的混合量调节大小。
在其中一些实施例中,所述喷头采用石英材质,喷头的出气挡板上从出气孔(喷口)喷出的气体在圆形反应腔内均匀混合反应。
在其中一些实施例中,所述同心圆环喷头中心部位的出气孔(喷口)面积比外围圆环的出气孔(喷口)面积小。
在其中一些实施例中,所述独立的进气管道通入的不同气源独立管控,同心圆环内的气体隔离开来分别予以管控,彼此间不产生干扰。
在其中一些实施例中,所述同心圆环独立腔体内的气体在出气挡板内均匀分布。
在其中一些实施例中,所述圆形反应腔的反应区域内的前驱物均匀混合,形成均匀的流场气体。
本发明采用同心圆环喷头结构,通过喷头的内部管道结构,气体从其喷口喷出后,在反应区域内充分均匀混合后形成均匀的流场。本发明同心圆环型喷头使用石英或各种高强度,且热膨胀系数较低的材质,因此在高温下使用下不容易发生变形或损坏,并对设备、衬底生长不产生影响。
本发明的同心圆环整体结构的喷头特别适用于圆形反应腔,从该喷头喷出的混合气体可在大面积范围均匀地覆盖在衬底盘上,使晶体在衬底上均匀生长。由于同心圆环喷头中心部位的喷口面积比外围的喷口面积小,故采用独立的进气管道设计,通过监控调节进气的流速和流量,形成反应区域内均匀流场;各独立管道可通入不同金属源或气体,可方便地进行多金属源的衬底生长和工艺调试。喷头底部的出气挡板,使气体出口为挡板式出气孔,所喷出气体均匀分布,利于在反应区域形成更均匀的流场。
本发明通过各路气源彼此隔离并独立管控,以及多个喷头集成使用的方式,使前驱物以及各种气体混合后形成大面积范围的均匀流场并沉积在衬底表面,明显改善大面积沉底的生长晶体质量,大幅提高生产效率。
附图说明
图1为本发明实施例的剖面示意图。
图2为本发明实施例的结构示意图。
图3为本发明实施例的仰视立体示意图。
具体实施方式
为能进一步了解本发明的特征、技术手段以及所达到的具体目的、功能,解析本发明的优点与精神,藉由以下结合附图与具体实施方式对本发明的详述得到进一步的了解。
本发明提供一种材料气相外延用同心圆环喷头结构,包含有一个以上独立的进气管道1,独立的进气管道1上设有监控调节进气流速和流量的控制器,控制器监控管道内气体的流速、流量并调节使其均匀流场,各种气体隔离开来予以管控,喷头4底部设有出气挡板3,喷头4采用同心圆环2结构。
参见附图1,独立进气管道,采用独立的进气管道设计,通过监控调节进气的流速和流量,形成在反应区域内形成均匀的流场;同心圆环的整体结构,使用这种结构可使各种气体隔离开来予以管控;出气挡板,可使所喷出气体均匀分布,以利反应区域流场均匀。
同心圆环2为筒状,喷头4内中心设有一中心圆环,中心圆环外的同心圆环2的外壁与内壁顶端之间设有密封板,同心圆环2的外壁与内壁底端之间设有出气挡板3,同心圆环2的外壁、内壁、密封板与出气挡板3形成一立体的隔离区域,各同心圆环2之间形成独立腔体并且相互隔离,同心圆环2个数根据前驱物及保护性气体数量同比设置,进气管道1的数量由衬底片的大小或数量来决定,各同心圆环2顶端的密封板上连接一个独立的进气管道1,各同心圆环2底端的出气挡板3上设有一个及以上的出气孔(喷口),可以中心圆环的出气挡板3上设有一个出气孔(喷口),外圈圆环的出气挡板3上设有逐渐真多的多个出气孔(喷口),出气孔(喷口)的孔径根据前驱物及保护性气体的混合量调节大小。
喷头4下面设有圆形反应腔,喷头4的出气挡板3上从出气孔(喷口)喷出的气体在圆形反应腔内均匀混合反应,参见附图2,同心圆环结构提供多个彼此隔离的管道,使多种气体通过喷口喷出后, 在其下方区域混合反应。
喷头4中心部位的中心圆环底部出气孔(喷口)面积比外围圆环的出气孔(喷口)面积小,各独立的进气管道1通入不同金属源或气体,独立的进气管道1通入的不同气体独立管控,彼此间不产生干扰,各同心圆环2的气体在出气挡板3内均匀分布,同心圆环2内的气体隔离开来分别予以管控,在圆形反应腔的反应区域提供均匀的前驱物混合,形成均匀的流场。
实施例一:
涉及化学气相沉积(CVD)或者氢化物气相外延(HVPE)的反应都需要在高温条件下进行。所以喷头材质需要选择高强度,不与反应气体产生化学反应、热膨胀系数较低的材质,如石英制作喷头。
喷头的管道最少为三个,即为金属源、氮气和氨气管道。当不同的气体通过同心圆环结构喷头时,将它们隔离开来。在出口处的挡板式出气孔,使所喷出气体均匀分布,利于均匀混合,利于在反应区域形成更均匀的流场。独立的进气管道,便于监控调节每个管道气体的流速、流量,利于管控工艺,利于提高晶体质量和生长均匀性。
同心圆环管道的数量可根据衬底片的大小或数量来决定,当衬底尺寸较小或数量不多时,选用少量管道覆盖衬底表面即可。当选用大尺寸衬底或增加衬底数量时,可增加管道数量,以便使均匀流畅覆盖所有衬底表面。
同心圆环结构的喷头尤其适合大尺寸衬底或者多数量衬底的生长,其圆形的喷口设计使混合气体在衬底上方形成大范围的均匀流场分布,不会因为衬底尺寸过大或者衬底数量过多而导致晶体生长不均匀,利于大规模生产。
实施例二:
涉及化学气相沉积(CVD)或者氢化物气相外延(HVPE)的反应都需要在高温条件下进行。所以喷头材质需要选择高强度,不与反应气体产生化学反应,且热膨胀系数较低的材质,譬如石英做喷头。
喷头采用独立管道设计,对通入的不同气体独立管控,彼此间不产生干扰。同心圆环与独立进气管道的设计,对所通入的多种金属源或气体,可以方便地进行工艺调试。同心圆环的隔离结构将不同气体隔离开来,出口处的挡板式出气孔使所喷出气体均匀分布,利于均匀混合,利于在反应区域形成更均匀的流场。独立的进气管道,便于调节每个管道的气体的流速、流量,利于管控工艺,利于提高晶体质量和生长均匀性。
同心圆环管道的数量可根据衬底片大小或其数量决定,当衬底尺寸较小或者衬底数量不多时,选用少量管道覆盖衬底表面即可。当选用大尺寸衬底或者增加衬底数量时,可增加管道数量,以便使均匀流畅覆盖所有衬底表面。
同心圆环结构的喷头尤其适合大尺寸衬底或者多数量衬底的生长,其圆形的喷口设计使混合气体在衬底上方形成大范围的均匀流场分布,不会因为衬底尺寸过大或者衬底数量过多而导致晶体生长不均匀,利于大规模生产。
本发明可以在较大的衬底和较大的沉积区域之上提供均匀的前驱物混合,采用喷头整体同心圆环结构,通过各路气源彼此隔离且各自独立监控进行调节,以及多个喷头集成使用的方式,使前驱物以及各种气体混合后形成大面积范围的均匀流场并沉积在衬底表面,明显改善大面积沉底的生长晶体质量,提高生产出来的外延片的质量,从而实现Ⅲ族-氮化物半导体晶片的大批量生产,大幅提高生产效率。
以上所述实施例仅表达了本发明的部分实施方式,其描述较为具体和详细,但并不能因此而理解为对本发明范围的限制。应当指出的是,对于本领域的普通技术人员来说,在不脱离本发明构思的前提下,还可以做出若干变形和改进,这些都属于本发明的保护范围。因此,本发明的保护范围应以所附权利要求为准。
Claims (9)
1.一种材料气相外延用同心圆环喷头结构,包含有:一个以上独立的进气管道,其特征在于,所述进气管道上设有监控调节进气流速和流量的控制器,所述控制器监控管道内气体的流速、流量并调节使其均匀流场,所述喷头底部设有出气挡板,所述喷头内设有一个以上同心圆环,同心圆环为筒状,喷头内中心设有一中心圆环,中心圆环外的同心圆环的外壁与内壁顶端之间设有密封板,同心圆环的外壁与内壁底端之间设有出气挡板,同心圆环的外壁、内壁、密封板与出气挡板形成一立体的隔离区域,各同心圆环之间形成独立腔体并且相互隔离,各同心圆环顶端的密封板上连接一个独立的进气管道,各同心圆环底端的出气挡板上设有一个及以上的出气孔,所述喷头下面设有圆形反应腔,各独立的进气管道通入不同金属源或气体。
2.根据权利要求1所述的一种材料气相外延用同心圆环喷头结构,其特征在于,所述进气管道的数量由衬底片的大小或数量来决定。
3.根据权利要求2所述的一种材料气相外延用同心圆环喷头结构,其特征在于,所述同心圆环个数根据前驱物及保护性气体数量同比设置。
4.根据权利要求1所述的一种材料气相外延用同心圆环喷头结构,其特征在于,所述同心圆环的中心圆环的出气挡板上设有一个出气孔,外圈圆环的出气挡板上设有逐渐真多的多个出气孔,出气孔的孔径根据前驱物及保护性气体的混合量调节大小。
5.根据权利要求1所述的一种材料气相外延用同心圆环喷头结构,其特征在于,所述喷头采用石英材质,所述喷头的出气挡板上从出气孔喷出的气体在圆形反应腔内均匀混合反应。
6.根据权利要求1所述的一种材料气相外延用同心圆环喷头结构,其特征在于,所述同心圆环喷头中心部位的出气孔面积比外围圆环的出气孔面积小。
7.根据权利要求1所述的一种材料气相外延用同心圆环喷头结构,其特征在于,所述独立的进气管道通入的不同气源独立管控,所述同心圆环内的气体隔离开来分别予以管控,彼此间不产生干扰。
8.根据权利要求1所述的一种材料气相外延用同心圆环喷头结构,其特征在于,所述同心圆环独立腔体内的气体在出气挡板内均匀分布。
9.根据权利要求1所述的一种材料气相外延用同心圆环喷头结构,其特征在于,所述圆形反应腔的反应区域内的前驱物均匀混合,形成均匀的流场气体。
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