JPH0293071A - 薄膜の形成方法 - Google Patents
薄膜の形成方法Info
- Publication number
- JPH0293071A JPH0293071A JP24233388A JP24233388A JPH0293071A JP H0293071 A JPH0293071 A JP H0293071A JP 24233388 A JP24233388 A JP 24233388A JP 24233388 A JP24233388 A JP 24233388A JP H0293071 A JPH0293071 A JP H0293071A
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- film
- sih2cl2
- introduction
- gas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010409 thin film Substances 0.000 title claims abstract description 27
- 230000015572 biosynthetic process Effects 0.000 title abstract description 5
- 238000000034 method Methods 0.000 claims abstract description 13
- 239000002994 raw material Substances 0.000 claims abstract description 11
- 239000007789 gas Substances 0.000 claims description 29
- 239000010408 film Substances 0.000 abstract description 37
- 230000008021 deposition Effects 0.000 abstract description 17
- 239000000758 substrate Substances 0.000 abstract description 8
- 229910008045 Si-Si Inorganic materials 0.000 abstract description 2
- 229910006411 Si—Si Inorganic materials 0.000 abstract description 2
- 238000005979 thermal decomposition reaction Methods 0.000 abstract description 2
- 229910003818 SiH2Cl2 Inorganic materials 0.000 abstract 4
- 229910007991 Si-N Inorganic materials 0.000 abstract 1
- 229910006294 Si—N Inorganic materials 0.000 abstract 1
- XMIJDTGORVPYLW-UHFFFAOYSA-N [SiH2] Chemical compound [SiH2] XMIJDTGORVPYLW-UHFFFAOYSA-N 0.000 abstract 1
- 238000005121 nitriding Methods 0.000 abstract 1
- 238000000151 deposition Methods 0.000 description 18
- 238000004519 manufacturing process Methods 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000000428 dust Substances 0.000 description 2
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 2
- NLXLAEXVIDQMFP-UHFFFAOYSA-N Ammonia chloride Chemical compound [NH4+].[Cl-] NLXLAEXVIDQMFP-UHFFFAOYSA-N 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 235000019270 ammonium chloride Nutrition 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000003085 diluting agent Substances 0.000 description 1
- 238000010790 dilution Methods 0.000 description 1
- 239000012895 dilution Substances 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 210000004224 pleura Anatomy 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 238000010926 purge Methods 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。
め要約のデータは記録されません。
Description
【発明の詳細な説明】
〔発明の目的〕
（産業上の利用分野）
本発明は、半導体装置の製造に用いられる薄膜の形成方
法に係わり、特に、その膜厚が数＋１メートル程度の薄
膜の形成方法に関する。
法に係わり、特に、その膜厚が数＋１メートル程度の薄
膜の形成方法に関する。
（従来の技術）
化学的気相成長法により、基板上に薄膜を形成する場合
、通常第１図（ａ）に示した様に、薄膜形成室に、ある
流徴の原料ガスを導入し、ガス導入時間ｔ、により、膜
厚の制御を行なう。また原料ガスが複数である場合は、
ガス導入時間をずらしたり（第１図（ｂ） ’） 、同
時に薄膜形成室に原料ガスを導入し、全ての原料ガスが
流れている時間ｔ。
、通常第１図（ａ）に示した様に、薄膜形成室に、ある
流徴の原料ガスを導入し、ガス導入時間ｔ、により、膜
厚の制御を行なう。また原料ガスが複数である場合は、
ガス導入時間をずらしたり（第１図（ｂ） ’） 、同
時に薄膜形成室に原料ガスを導入し、全ての原料ガスが
流れている時間ｔ。
により膜厚の制御を行なう。
キャパシタゲート用等、膜厚数＋１メートル程度の絶縁
膜を得ようとする場合、堆積速度を、数Ａ１分程度にな
る条件（温度、圧力、ガス流量、希釈ガス使用）で、数
分〜数十分の堆積時間（’ｔ、１１ ）の堆積が行な
われる。ガス流量制御装置、バルブ等の動差の時間のず
れにより、堆積操作毎の実質の堆積時間の差が生じると
、堆積時間が短いために、数秒の差が、膜厚の杏現性に
影響する。
膜を得ようとする場合、堆積速度を、数Ａ１分程度にな
る条件（温度、圧力、ガス流量、希釈ガス使用）で、数
分〜数十分の堆積時間（’ｔ、１１ ）の堆積が行な
われる。ガス流量制御装置、バルブ等の動差の時間のず
れにより、堆積操作毎の実質の堆積時間の差が生じると
、堆積時間が短いために、数秒の差が、膜厚の杏現性に
影響する。
さらに、バッチ処理により、大量の基板に同時に堆積を
行なう場合、基板位置による堆積速度の差実質の堆積時
間の差も加わり、均一な膜厚の薄膜を制御性良く堆積す
ることが困難釦なってくる。
行なう場合、基板位置による堆積速度の差実質の堆積時
間の差も加わり、均一な膜厚の薄膜を制御性良く堆積す
ることが困難釦なってくる。
この問題は、膜厚をより薄くする場合に、より大きくな
ってくると考えられる。
ってくると考えられる。
（発明が解決しようとする課題）
本発明は、上記した従来の化学的気相成長法において、
連続して原料ガスを、スリ膜形成室に導入し、導入時間
により１．膜厚を制御する方法においては、膜厚数ｎｍ
近傍の薄膜を、制御性良く堆積することが困難になる問
題に鑑みてなされたものである。
連続して原料ガスを、スリ膜形成室に導入し、導入時間
により１．膜厚を制御する方法においては、膜厚数ｎｍ
近傍の薄膜を、制御性良く堆積することが困難になる問
題に鑑みてなされたものである。
（課題を解決するための手段）
本発明は、上記目的を達成するために、原料カスを肋膜
形成装置の薄膜形成室に、間欠的に導入する工程を含む
、薄膜の形成方法を提供する。
形成装置の薄膜形成室に、間欠的に導入する工程を含む
、薄膜の形成方法を提供する。
（作用）
例えば、前記絶縁膜に窒化珪素（ＳｉＮ）膜を用いる場
合、原料ガスとしてＳ ｉＨ，Ｃ１ｔ、 ＮＨ。
合、原料ガスとしてＳ ｉＨ，Ｃ１ｔ、 ＮＨ。
が用いられる。８ｉＮ膜は、基板上に５ｉ−Ｎ結合が交
互に形成されることにより成長する。〜８ｏＯｃＣにお
いて、ＳｉＨ，Ｃｊ？を熱分解によるｐｏｌｙ８ｉ堆積
（Ｓｉ−Ｓｉ結合の形成）は遅く、８ｉＨ，Ｃ１，を間
欠的Ｋｇ膜形成室に導入すれば、その導入時間が短かけ
れば、１回のＳ ｉ Ｈ，Ｃ１！３＃人で１原子層しか
膜は成長しない。次ＫＮＨ，を導入することにより窒化
し、５ｉＴＮ結合を形成する。膜堆積の条件でＮ−Ｎ結
合が形成されることはない。
互に形成されることにより成長する。〜８ｏＯｃＣにお
いて、ＳｉＨ，Ｃｊ？を熱分解によるｐｏｌｙ８ｉ堆積
（Ｓｉ−Ｓｉ結合の形成）は遅く、８ｉＨ，Ｃ１，を間
欠的Ｋｇ膜形成室に導入すれば、その導入時間が短かけ
れば、１回のＳ ｉ Ｈ，Ｃ１！３＃人で１原子層しか
膜は成長しない。次ＫＮＨ，を導入することにより窒化
し、５ｉＴＮ結合を形成する。膜堆積の条件でＮ−Ｎ結
合が形成されることはない。
ＳｉＨ，Ｃ４ｔとＮＨ，の１回毎の導入で第２図の様に
、８ｉＮ膜が成長する。この間欠的導入を所定の膜厚に
なるまで繰り返す。
、８ｉＮ膜が成長する。この間欠的導入を所定の膜厚に
なるまで繰り返す。
この方法では、１原子層ごとの成長になるため膜厚の均
一性が良く、膜厚は原料ガスの導入回路により決まるた
め制御性も向上する。
一性が良く、膜厚は原料ガスの導入回路により決まるた
め制御性も向上する。
（実施例）
以下、本発明の実施例について詳細に説明する。
先ず、５インチ基板１００枚処理の容量の減圧ＣＶＤ装
置を用い、ＳＩＮ膜の堆積を行なった例を示す。薄膜形
成室の温度が７５０°ＣＫ安定した（４）１ ｍ Ｔｏ
ｒ ｒ以下に排気する。Ｑ ： ８ ＩＨ，Ｃ１ｔｌ
ｏｏｒＴｌ（標準状態換算）を流す。■：１ｍＴｏｒｒ
以下に排気する。■：ＮＨ，を２００ｍ１（標準状態換
算）流す。 ｒ １ｍＴｏｒｒ以下の排気」は、５ｉＨ
ＩＣｚ。
置を用い、ＳＩＮ膜の堆積を行なった例を示す。薄膜形
成室の温度が７５０°ＣＫ安定した（４）１ ｍ Ｔｏ
ｒ ｒ以下に排気する。Ｑ ： ８ ＩＨ，Ｃ１ｔｌ
ｏｏｒＴｌ（標準状態換算）を流す。■：１ｍＴｏｒｒ
以下に排気する。■：ＮＨ，を２００ｍ１（標準状態換
算）流す。 ｒ １ｍＴｏｒｒ以下の排気」は、５ｉＨ
ＩＣｚ。
とＮＨ５の混合が生じ、定常的な堆積が起こることを防
ぐための制作であり、装置の排気能力により異なる。（
Ｄと■、■と■の間にＮ７等不活性ガスのパージを行な
ってもよい。以上の装作を繰り返すと、原料ガス流の連
絡は第２図（ｂ）の様になる。
ぐための制作であり、装置の排気能力により異なる。（
Ｄと■、■と■の間にＮ７等不活性ガスのパージを行な
ってもよい。以上の装作を繰り返すと、原料ガス流の連
絡は第２図（ｂ）の様になる。
膜厚５０Ａの堆積を行なった時、５インチ基板面内５点
の膜厚測定で均一性〔（（最大値）−（最小値））／２
Ｘ（平均値）〕は、面内、面間ともに１％以下と良好で
あった。同装置を用いて、ガスを定常的に流して堆積を
行なった時の均一性は面内２％以下、面間４％以下であ
った。
の膜厚測定で均一性〔（（最大値）−（最小値））／２
Ｘ（平均値）〕は、面内、面間ともに１％以下と良好で
あった。同装置を用いて、ガスを定常的に流して堆積を
行なった時の均一性は面内２％以下、面間４％以下であ
った。
また従来の方法では、膜の堆積により、薄膜形成室のガ
ス流方向に原料ガスの濃度勾配が生じ、基板のセット位
置により堆積速度が異なる現象が見られ問題となってい
た。この問題を解決するために１Ｍ度勾配をつけ、堆積
速度を一定にする様、湿度制御を厳密に行なわれていた
。しかし、本発明では、膜厚は、ガス流のパルス数によ
り決まり、堆４−ｉ！！ ’？Ｍ度の差は実質的には無
視できるため、温度制御を厳密に行なう必要はない。
ス流方向に原料ガスの濃度勾配が生じ、基板のセット位
置により堆積速度が異なる現象が見られ問題となってい
た。この問題を解決するために１Ｍ度勾配をつけ、堆積
速度を一定にする様、湿度制御を厳密に行なわれていた
。しかし、本発明では、膜厚は、ガス流のパルス数によ
り決まり、堆４−ｉ！！ ’？Ｍ度の差は実質的には無
視できるため、温度制御を厳密に行なう必要はない。
珪素源のガスはｓｔＨ，Ｃｌ、を用いるのが望ましいが
、Ｓ ｉＨ，、Ｓ ｉＨ，Ｃｌ等珪緊を含む化合物のガ
スであれば良い。
、Ｓ ｉＨ，、Ｓ ｉＨ，Ｃｌ等珪緊を含む化合物のガ
スであれば良い。
導入するガスは、プラズマ状態であっても良い。
枚葉処理の減圧ＣＶＤ装置を用いる場合、ＮＨ。
は定常的に流しＳｉＨ，ｔＪ’、のみを第３図の様に、
間欠的に導入することによっても、バッチ処理の場合と
同様な効果が得られる。
間欠的に導入することによっても、バッチ処理の場合と
同様な効果が得られる。
８ｉＨ，Ｃ１２とＮＨ，を用いて８ｉＮ膜を形成する場
合、反応副生成物として生じるＮＨ，Ｃ１が析出し、ゴ
ミの原因となりやすい。本発明の方法では、夕晴のＮ
１（４Ｃ／生成ごとに１ ガス流の変化が起こるため
、ＮＨ４Ｃｌが析出したとしても薄膜形成室外へ、ガス
と共に排気されやすく、ゴミの蓄積抑えられる効果もあ
る。
合、反応副生成物として生じるＮＨ，Ｃ１が析出し、ゴ
ミの原因となりやすい。本発明の方法では、夕晴のＮ
１（４Ｃ／生成ごとに１ ガス流の変化が起こるため
、ＮＨ４Ｃｌが析出したとしても薄膜形成室外へ、ガス
と共に排気されやすく、ゴミの蓄積抑えられる効果もあ
る。
絶縁膜としてＳｉＮ膜を堆積した場合を示したが、Ｓｉ
ｎ、膜の堆積にも適用可能である。珪素源のガス（８ｉ
Ｈ，、Ｓ ｉ、Ｈ，、Ｓ ｉ （ＱＣ，Ｈ，）、等）と
酸素源のガス（Ｏｔ 、０ｍ１希釈Ｈ！０ 、 Ｎ、
０等）を間欠的に交互に流すことＫよって、Ｍ！積湿温
度４５０°Ｃにおいて、面内均一性が２％以下の膜が得
られた。
ｎ、膜の堆積にも適用可能である。珪素源のガス（８ｉ
Ｈ，、Ｓ ｉ、Ｈ，、Ｓ ｉ （ＱＣ，Ｈ，）、等）と
酸素源のガス（Ｏｔ 、０ｍ１希釈Ｈ！０ 、 Ｎ、
０等）を間欠的に交互に流すことＫよって、Ｍ！積湿温
度４５０°Ｃにおいて、面内均一性が２％以下の膜が得
られた。
る事ができる。
以Ｅ述ぺた様に本発明によれば、膜厚数＋１メートル程
度の薄膜を、均一性良く堆積することが可能となる。
度の薄膜を、均一性良く堆積することが可能となる。
第１図は従来の方法を説明する図、第２図及び第３図は
本発明の一実施例を説明する概念図である。 代地人 弁理士 則 近 憲 佑 同 松 山 光 之
本発明の一実施例を説明する概念図である。 代地人 弁理士 則 近 憲 佑 同 松 山 光 之
Claims (2)
- （１）薄膜形成用原料ガスの少なくとも１種類のガスを
、薄膜形成装置の薄膜形成室に間欠的に導入する工程を
有することを特徴とする薄膜の形成方法。 - （２）前記、薄膜形成用原料ガスが複数であり、それぞ
れのガスを交互に、繰り返し薄膜形成室に導入する工程
を含む請求項１記載の薄膜の形成方法。
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP24233388A JPH0293071A (ja) | 1988-09-29 | 1988-09-29 | 薄膜の形成方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP24233388A JPH0293071A (ja) | 1988-09-29 | 1988-09-29 | 薄膜の形成方法 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0293071A true JPH0293071A (ja) | 1990-04-03 |
Family
ID=17087636
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP24233388A Pending JPH0293071A (ja) | 1988-09-29 | 1988-09-29 | 薄膜の形成方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0293071A (ja) |
Cited By (308)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5118642A (en) * | 1991-01-24 | 1992-06-02 | Daidousanso Co., Ltd. | Method for producing semiconductors |
| JPH05198744A (ja) * | 1992-01-20 | 1993-08-06 | Nec Corp | 半導体装置の製造方法 |
| JPH05251707A (ja) * | 1992-03-04 | 1993-09-28 | Koudo Eizou Gijutsu Kenkyusho:Kk | 薄膜トランジスタおよびその製造方法 |
| JPH0684888A (ja) * | 1992-02-27 | 1994-03-25 | G T C:Kk | 絶縁膜の形成方法 |
| US6165916A (en) * | 1997-09-12 | 2000-12-26 | Kabushiki Kaisha Toshiba | Film-forming method and film-forming apparatus |
| JP2002060947A (ja) * | 2000-07-07 | 2002-02-28 | Asm Internatl Nv | 原子層のｃｖｄ |
| WO2003021650A1 (fr) * | 2001-09-03 | 2003-03-13 | Tokyo Electron Limited | Procede de formation d'un film |
| WO2004105115A1 (ja) * | 2003-05-26 | 2004-12-02 | Tokyo Electron Limited | シリコン窒化膜を形成するｃｖｄ方法 |
| JP2008057048A (ja) * | 2007-11-02 | 2008-03-13 | Ulvac Japan Ltd | バリア膜形成方法 |
| JP2008060455A (ja) * | 2006-09-01 | 2008-03-13 | Tokyo Electron Ltd | 成膜方法、成膜装置及び記憶媒体 |
| US7351668B2 (en) | 2005-03-09 | 2008-04-01 | Tokyo Electron Limited | Film formation method and apparatus for semiconductor process |
| JP2008306093A (ja) * | 2007-06-11 | 2008-12-18 | Tokyo Electron Ltd | 成膜方法及び成膜装置 |
| JP2009004786A (ja) * | 2007-06-21 | 2009-01-08 | Asm Internatl Nv | パルスｃｖｄとａｌｄの併用による薄膜の堆積方法 |
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