TWI507561B - 結合進氣和排氣的噴灑頭 - Google Patents
結合進氣和排氣的噴灑頭 Download PDFInfo
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- TWI507561B TWI507561B TW100127734A TW100127734A TWI507561B TW I507561 B TWI507561 B TW I507561B TW 100127734 A TW100127734 A TW 100127734A TW 100127734 A TW100127734 A TW 100127734A TW I507561 B TWI507561 B TW I507561B
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- sprinkler head
- intake
- exhaust
- exhaust port
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45565—Shower nozzles
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
Description
本發明是有關於一種噴灑頭(showerhead)的設計,且特別是有關於一種結合進氣(intake)和排氣(exhaust)的噴灑頭。
有機金屬化學氣相沉積法(metal organic chemical vapor deposition,MOCVD)是目前在晶圓上進行磊晶製程的一種方法,目前MOCVD的進氣設備主要是以噴灑頭模式為主。噴灑頭的設計卻常有中央氣體濃度滯流現象發生,造成此區域不能使用之外,還會影響到晶圓邊緣波長均勻度(wavelength uniformity)分佈。由於上述現象為小尺寸腔體現象,將來要朝大尺寸發展時,均勻度的控制更為不易,不止會有中間滯流區的問題,還會因為氣體流動的路徑變長,造成越靠近抽氣的位置會有明顯濃度較低情況。
因此,近來有針對改善氣流場的均勻度之專利,如美國專利US 7,138,336 B2或是美國專利US 7,641,939 B2。前述專利都是採取噴灑頭進氣及腔體側邊抽氣的方式控制氣體進出。
本發明提供一種結合進氣和排氣的噴灑頭,可以解決氣體滯流在噴灑頭的問題之外,還可平衡基板表面的濃度分佈並能先將反應過程中的副產物排掉。
本發明提出一種結合進氣和排氣的噴灑頭,適於進行氣體的噴灑。這樣的噴灑頭至少包括一噴灑頭主體,其具有氣體作用表面、多數個進氣孔以及一中央排氣口。其中數個進氣孔位於氣體作用表面且中央排氣口位於氣體作用表面的中央。
在本發明之一實施例中,上述中央排氣口之面積與進氣孔之面積的比率為0.03~0.04。
在本發明之一實施例中,上述中央排氣口例如是由數個排氣孔所構成。
在本發明之一實施例中,上述中央排氣口之抽氣端向噴灑頭主體內凹。
在本發明之一實施例中,上述中央排氣口的排氣方向與進氣孔的進氣方向相互平行。
在本發明之一實施例中,上述中央排氣口之面積與該些進氣孔之面積的比率小於0.03。
在本發明之一實施例中,上述噴灑頭主體更包括至少一環狀排氣口,且環狀排氣口是以中央排氣口為中心呈同心圓狀地配置。
在本發明之一實施例中,上述環狀排氣口例如是由多數個排氣孔所構成。
在本發明之一實施例中,上述環狀排氣口之抽氣端向噴灑頭主體內凹。
在本發明之一實施例中,上述環狀排氣口的排氣方向與進氣孔的進氣方向相互平行。
在本發明之一實施例中,上述結合進氣和排氣的噴灑頭還可包括至少一流量計,用以控制中央排氣口以及/或是環狀排氣口的排氣量。
在本發明之一實施例中,上述噴灑頭是用於將氣體噴灑至多數個基板上。
在本發明之一實施例中,上述中央排氣口與基板的位置錯開配置。
在本發明之一實施例中,上述環狀排氣口與基板的位置錯開配置。
在本發明之一實施例中,上述結合進氣和排氣的噴灑頭還可包括一升降機構,用以調整基板與噴灑頭主體的距離。
在本發明之一實施例中,上述噴灑頭主體的面積大於所有基板的總面積。
基於上述,本發明將進氣與排氣同時設計在噴灑頭上,以區域性的進氣與排氣之噴灑技術抽離腔體中間高濃度的氣體,達到腔體中央與旁邊的濃度一致,同時可將反應產生的副產物先行抽離,以免在腔體滯留時間過久而影響反應結果,譬如成長出較差品質的磊晶。
為讓本發明之上述特徵能更明顯易懂,下文特舉實施例,並配合所附圖式作詳細說明如下。
圖1是依照一實施例所繪示的一種結合進氣和排氣的噴灑頭的3D視圖。
請參照圖1,本實施例之結合進氣和排氣的噴灑頭100至少包括一噴灑頭主體102,其具有氣體作用表面102a。數個進氣孔104配置在氣體作用表面102a上。在本實施例中,噴灑頭主體102包括一中央排氣口106,配置於氣體作用表面102a的中央,其中中央排氣口106例如是由數個排氣孔108所構成。這種噴灑頭100可以在如真空鍍膜或與其類似的製程中噴灑氣體。
圖2A是依照另一實施例所繪示的一種結合進氣和排氣的噴灑頭的正視圖。圖2B是圖2A之B-B線段的剖面示意圖。
請參照圖2A,本實施例的結合進氣和排氣的噴灑頭200至少包括一噴灑頭主體202。圖2A繪示了噴灑頭主體202的氣體作用表面。噴灑頭主體202具有多數個進氣孔204以及一配置於氣體作用表面中央的中央排氣口206。中央排氣口206例如是由數個排氣孔208所構成。
請參照圖2A與2B,噴灑頭主體202可將氣體噴灑至多數個基板210上,且適用於真空鍍膜或與其類似的製程。中央排氣口206例如與基板210錯開配置。此外,圖2A與圖2B中的箭頭代表氣體流的方向。亦即,中央排氣口206的排氣方向例如與多數個進氣孔204的進氣方向相互平行。
在本實施例中,中央排氣口206之面積與進氣孔204之面積的比率譬如0.03~0.04。此外,中央排氣口206之抽氣端206a可設計成向噴灑頭主體202內凹,以避免抽氣時的氣體與進氣孔204通入的氣體混流。換句話說,中央排氣口206之抽氣端206a的位置如果比進氣孔204的出口更接近基板210,則有可能影響中央排氣口206的效能。
在本實施例中,還可設置至少一流量計212,用以控制中央排氣口206的排氣量。中央排氣口206的排氣量應小於進氣孔204通入的氣體流量。同時,反應腔體216的內壓應保持一致。另外,噴灑頭200還可包括一升降機構214,用以調整基板210與噴灑頭主體202的距離。而且,上述噴灑頭主體202的面積譬如大於所有基板210的總面積,以利鍍膜之類的製程。
此外,設置在反應腔體216內的噴灑頭200除了使用中央排氣口206來使反應腔體216中間與旁邊的氣體濃度一致,同時還會在反應腔體216內設計側抽氣口218之類的抽氣口,來進行主要的抽氣動作。
圖3A是噴灑頭的中央排氣口的面積與進氣孔的面積比率小於0.03的平面示意圖。
請參照圖3A,本實施例之結合進氣和排氣的噴灑頭300與上一實施例的噴灑頭200大致相似。噴灑頭300包括噴灑頭主體302,其具有多數個進氣孔304以及由多數個排氣孔308構成的中央排氣口306,均配置於噴灑頭300的氣體作用表面上。然而,本實施例的中央排氣口306之面積與進氣孔304之面積的比率小於0.03,中央排氣口306的排氣量可能不足以即時排除氣體副產物。因此,如圖3B所示,另外提出一種結合進氣與排氣的噴灑頭的實施例。
圖3B是依照又一實施例之一種結合進氣和排氣的噴灑頭的正視圖。圖4是圖3B之B’-B’線段的剖面示意圖。
請參照圖3B與圖4,本實施例的結合進氣與排氣的噴灑頭300與圖3A中的噴灑頭300相似。圖3A與圖3B的差異在於,圖3B中,結合進氣與排氣的噴灑頭30額外具有至少一環狀排氣口310,位於噴灑頭主體302中。環狀排氣口310是以中央排氣口306為中心,呈同心圓狀地配置。其中,環狀排氣口310例如是由多數個第二排氣孔312所構成。第一排氣孔308與第二排氣孔312的分布與大小均可依所需作變化。在一實施例中,中央排氣口306與環狀排氣口310均與基板400的位置錯開配置,如圖4所示。這種噴灑頭300適於對多個基板400進行大面積的氣體噴灑,尤其適合大面積真空鍍膜及與其相似的製程。圖4中的箭頭代表氣體流動的方向,亦即,中央排氣口306的排氣方向例如與進氣孔304的進氣方向相互平行,且環狀排氣口310的排氣方向例如與進氣孔304的進氣方向相互平行。
請參照圖4,在本實施例中,中央排氣口306之抽氣端306a與環狀排氣口310之抽氣端310a都設計成向噴灑頭主體302內凹,以避免抽氣時的氣體與進氣孔304通入的氣體混流。另外,噴灑頭300還可另設置流量計402與404,以分別控制中央排氣口306以及環狀排氣口310的排氣量。
在本實施例中,噴灑頭300更包括一升降機構406,用以調整基板400與噴灑頭主體302的距離。而且,上述噴灑頭主體302的面積譬如大於所有基板400的總面積,以利鍍膜之類的製程。另外,反應腔體408內還包括側抽氣口410之類的抽氣裝置。
綜上所述,本發明在噴灑頭上同時具有進氣與排氣之功能,所以能藉由區域性的進氣與排氣之噴灑技術,達到腔體中央與旁邊的濃度一致之效果。本發明還可將反應產生的副產物先行抽離,以免副產物在腔體滯留時間過久而影響反應結果,譬如真空鍍膜時成長出較差品質的磊晶。此外,本發明之噴灑頭還有構造簡單、加工成本低以及易於維修等優點。
雖然本發明已以實施例揭露如上,然其並非用以限定本發明,任何所屬技術領域中具有通常知識者,在不脫離本發明之精神和範圍內,當可作些許之更動與潤飾,故本發明之保護範圍當視後附之申請專利範圍所界定者為準。
100、200、300...噴灑頭
102、202、302...噴灑頭主體
102a...氣體作用表面
104、204、304...進氣孔
106、206、306...中央排氣口
206a、306a、310a...抽氣端
108、208...排氣孔
210、400...基板
212、402、404...流量計
214、406...升降機構
216、408...反應腔體
218、410...側抽氣口
308...第一排氣孔
310...環狀排氣口
312...第二排氣孔
圖1是依照一實施例之一種結合進氣和排氣的噴灑頭的3D視圖。
圖2A是依照另一實施例之一種結合進氣和排氣的噴灑頭的正視圖。
圖2B是圖2A之B-B線段的剖面示意圖。
圖3A是噴灑頭的中央排氣口的面積與進氣孔的面積比率小於0.03的平面示意圖。
圖3B是依照又一實施例之一種結合進氣和排氣的噴灑頭的正視圖。
圖4是圖3B之B’-B’線段的剖面示意圖。
100...噴灑頭
102...噴灑頭主體
102a...氣體作用表面
104...進氣孔
106...中央排氣口
108...排氣孔
Claims (17)
- 一種結合進氣和排氣的噴灑頭,適於進行氣體的噴灑,該噴灑頭至少包括一噴灑頭主體,其特徵在於:該噴灑頭主體具有一氣體作用表面、位於該氣體作用表面上的多數個進氣孔以及位於該氣體作用表面的中心位置的一中央排氣口,其中該中央排氣口之抽氣端向該噴灑頭主體內凹。
- 如申請專利範圍第1項所述之結合進氣和排氣的噴灑頭,其中該中央排氣口之面積與該些進氣孔之面積的比率為0.03~0.04。
- 如申請專利範圍第1項所述之結合進氣和排氣的噴灑頭,其中該中央排氣口包括由多數個排氣孔所構成。
- 如申請專利範圍第1項所述之結合進氣和排氣的噴灑頭,其中該中央排氣口的排氣方向與該些進氣孔的進氣方向相互平行。
- 如申請專利範圍第1項所述之結合進氣和排氣的噴灑頭,其中該中央排氣口之面積與該些進氣孔之面積的比率小於0.03。
- 如申請專利範圍第5項所述之結合進氣和排氣的噴灑頭,其中該噴灑頭主體更包括至少一環狀排氣口,該環狀排氣口是以該中央排氣口為中心呈同心圓狀地配置。
- 如申請專利範圍第6項所述之結合進氣和排氣的噴灑頭,其中該環狀排氣口包括由多數個排氣孔所構成。
- 如申請專利範圍第6項所述之結合進氣和排氣的噴 灑頭,其中該環狀排氣口之抽氣端向該噴灑頭主體內凹。
- 如申請專利範圍第6項所述之結合進氣與排氣的噴灑頭,其中該環狀排氣口的排氣方向與該些進氣孔的進氣方向相互平行。
- 如申請專利範圍第6項所述之結合進氣和排氣的噴灑頭,更包括至少一流量計,用以控制該中央排氣口或該環狀排氣口的排氣量。
- 如申請專利範圍第6項所述之結合進氣和排氣的噴灑頭,其中該噴灑頭是用於將氣體噴灑至多數個基板上。
- 如申請專利範圍第11項所述之結合進氣和排氣的噴灑頭,其中該環狀排氣口與該些基板的位置錯開配置。
- 如申請專利範圍第1項所述之結合進氣和排氣的噴灑頭,更包括至少一流量計,用以控制中央排氣口的排氣量。
- 如申請專利範圍第1項所述之結合進氣和排氣的噴灑頭,其中該噴灑頭是用於將氣體噴灑至多數個基板上。
- 如申請專利範圍第14項所述之結合進氣和排氣的噴灑頭,其中該中央排氣口與該些基板的位置錯開配置。
- 如申請專利範圍第11或14項所述之結合進氣和排氣的噴灑頭,更包括一升降機構,用以調整該些基板與該噴灑頭主體的距離。
- 如申請專利範圍第11或14項所述之結合進氣和排氣的噴灑頭,其中該噴灑頭主體的面積大於該些基板的總面積。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
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TW100127734A TWI507561B (zh) | 2010-12-10 | 2011-08-04 | 結合進氣和排氣的噴灑頭 |
US13/211,309 US20120145078A1 (en) | 2010-12-10 | 2011-08-17 | Showerhead integrating intake and exhaust |
CN2011103056128A CN102534557A (zh) | 2010-12-10 | 2011-10-11 | 结合进气和排气的喷头 |
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TW99143375 | 2010-12-10 | ||
TW100127734A TWI507561B (zh) | 2010-12-10 | 2011-08-04 | 結合進氣和排氣的噴灑頭 |
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US20120145078A1 (en) | 2012-06-14 |
TW201224195A (en) | 2012-06-16 |
CN102534557A (zh) | 2012-07-04 |
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