JP6793243B2 - MoOCl4を使用することによるCVD Mo堆積 - Google Patents
MoOCl4を使用することによるCVD Mo堆積 Download PDFInfo
- Publication number
- JP6793243B2 JP6793243B2 JP2019501911A JP2019501911A JP6793243B2 JP 6793243 B2 JP6793243 B2 JP 6793243B2 JP 2019501911 A JP2019501911 A JP 2019501911A JP 2019501911 A JP2019501911 A JP 2019501911A JP 6793243 B2 JP6793243 B2 JP 6793243B2
- Authority
- JP
- Japan
- Prior art keywords
- molybdenum
- substrate
- moocl
- containing material
- vapor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 230000008021 deposition Effects 0.000 title claims description 81
- 229910015686 MoOCl4 Inorganic materials 0.000 title description 4
- SFPKXFFNQYDGAH-UHFFFAOYSA-N oxomolybdenum;tetrahydrochloride Chemical compound Cl.Cl.Cl.Cl.[Mo]=O SFPKXFFNQYDGAH-UHFFFAOYSA-N 0.000 title description 4
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 191
- 229910052750 molybdenum Inorganic materials 0.000 claims description 191
- 239000011733 molybdenum Substances 0.000 claims description 191
- 238000000034 method Methods 0.000 claims description 150
- 230000008569 process Effects 0.000 claims description 105
- 239000000758 substrate Substances 0.000 claims description 89
- 238000000151 deposition Methods 0.000 claims description 85
- 230000006911 nucleation Effects 0.000 claims description 76
- 238000010899 nucleation Methods 0.000 claims description 76
- 239000000463 material Substances 0.000 claims description 61
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 39
- 238000005229 chemical vapour deposition Methods 0.000 claims description 36
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 claims description 29
- ZOCHARZZJNPSEU-UHFFFAOYSA-N diboron Chemical compound B#B ZOCHARZZJNPSEU-UHFFFAOYSA-N 0.000 claims description 28
- OYMJNIHGVDEDFX-UHFFFAOYSA-J molybdenum tetrachloride Chemical compound Cl[Mo](Cl)(Cl)Cl OYMJNIHGVDEDFX-UHFFFAOYSA-J 0.000 claims description 25
- 239000002243 precursor Substances 0.000 claims description 22
- 239000001257 hydrogen Substances 0.000 claims description 20
- 229910052739 hydrogen Inorganic materials 0.000 claims description 20
- ZSSVQAGPXAAOPV-UHFFFAOYSA-K molybdenum trichloride Chemical compound Cl[Mo](Cl)Cl ZSSVQAGPXAAOPV-UHFFFAOYSA-K 0.000 claims description 20
- 238000007740 vapor deposition Methods 0.000 claims description 19
- 239000004065 semiconductor Substances 0.000 claims description 15
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 14
- 238000004519 manufacturing process Methods 0.000 claims description 9
- UYEGPKGLVUUIGD-UHFFFAOYSA-J tetrachloro(oxo)molybdenum Chemical compound Cl[Mo](Cl)(Cl)(Cl)=O UYEGPKGLVUUIGD-UHFFFAOYSA-J 0.000 claims description 9
- 235000012239 silicon dioxide Nutrition 0.000 claims description 7
- 239000000377 silicon dioxide Substances 0.000 claims description 7
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 3
- 229910000476 molybdenum oxide Inorganic materials 0.000 claims description 3
- PQQKPALAQIIWST-UHFFFAOYSA-N oxomolybdenum Chemical compound [Mo]=O PQQKPALAQIIWST-UHFFFAOYSA-N 0.000 claims description 3
- 238000001704 evaporation Methods 0.000 claims description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims 1
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 74
- 229910052786 argon Inorganic materials 0.000 description 37
- 239000012159 carrier gas Substances 0.000 description 35
- 238000006243 chemical reaction Methods 0.000 description 10
- 238000005137 deposition process Methods 0.000 description 10
- 150000002431 hydrogen Chemical class 0.000 description 9
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 8
- 230000004888 barrier function Effects 0.000 description 8
- 229910052796 boron Inorganic materials 0.000 description 8
- 239000012528 membrane Substances 0.000 description 7
- 238000001878 scanning electron micrograph Methods 0.000 description 7
- 239000003708 ampul Substances 0.000 description 6
- 238000010926 purge Methods 0.000 description 6
- 239000007789 gas Substances 0.000 description 5
- 230000004913 activation Effects 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- 239000003153 chemical reaction reagent Substances 0.000 description 4
- 238000011835 investigation Methods 0.000 description 4
- 238000012986 modification Methods 0.000 description 4
- 230000004048 modification Effects 0.000 description 4
- GICWIDZXWJGTCI-UHFFFAOYSA-I molybdenum pentachloride Chemical group Cl[Mo](Cl)(Cl)(Cl)Cl GICWIDZXWJGTCI-UHFFFAOYSA-I 0.000 description 4
- 239000001301 oxygen Substances 0.000 description 4
- 229910052760 oxygen Inorganic materials 0.000 description 4
- 238000012360 testing method Methods 0.000 description 4
- 238000002411 thermogravimetry Methods 0.000 description 4
- 238000005019 vapor deposition process Methods 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 229910015221 MoCl5 Inorganic materials 0.000 description 2
- 238000000560 X-ray reflectometry Methods 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000011156 evaluation Methods 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 238000005086 pumping Methods 0.000 description 2
- 238000001004 secondary ion mass spectrometry Methods 0.000 description 2
- 238000004876 x-ray fluorescence Methods 0.000 description 2
- KPZGRMZPZLOPBS-UHFFFAOYSA-N 1,3-dichloro-2,2-bis(chloromethyl)propane Chemical compound ClCC(CCl)(CCl)CCl KPZGRMZPZLOPBS-UHFFFAOYSA-N 0.000 description 1
- 238000002441 X-ray diffraction Methods 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000003638 chemical reducing agent Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 239000003550 marker Substances 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000004062 sedimentation Methods 0.000 description 1
- 238000002791 soaking Methods 0.000 description 1
- 238000004611 spectroscopical analysis Methods 0.000 description 1
- 238000000859 sublimation Methods 0.000 description 1
- 230000008022 sublimation Effects 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 230000001550 time effect Effects 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/02—Pretreatment of the material to be coated
- C23C16/0272—Deposition of sub-layers, e.g. to promote the adhesion of the main coating
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/04—Coating on selected surface areas, e.g. using masks
- C23C16/045—Coating cavities or hollow spaces, e.g. interior of tubes; Infiltration of porous substrates
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
- C23C16/08—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metal halides
- C23C16/14—Deposition of only one other metal element
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45553—Atomic layer deposition [ALD] characterized by the use of precursors specially adapted for ALD
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
- H01L21/02175—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
- H01L21/0228—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition deposition by cyclic CVD, e.g. ALD, ALE, pulsed CVD
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
- H01L21/28556—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table by chemical means, e.g. CVD, LPCVD, PECVD, laser CVD
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
- H01L21/28568—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table the conductive layers comprising transition metals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/32051—Deposition of metallic or metal-silicide layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76841—Barrier, adhesion or liner layers
- H01L21/76843—Barrier, adhesion or liner layers formed in openings in a dielectric
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76841—Barrier, adhesion or liner layers
- H01L21/7685—Barrier, adhesion or liner layers the layer covering a conductive structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76841—Barrier, adhesion or liner layers
- H01L21/76871—Layers specifically deposited to enhance or enable the nucleation of further layers, i.e. seed layers
- H01L21/76876—Layers specifically deposited to enhance or enable the nucleation of further layers, i.e. seed layers for deposition from the gas phase, e.g. CVD
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
- H10B41/30—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region
- H10B41/35—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region with a cell select transistor, e.g. NAND
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/10—Applying interconnections to be used for carrying current between separate components within a device
- H01L2221/1068—Formation and after-treatment of conductors
- H01L2221/1073—Barrier, adhesion or liner layers
- H01L2221/1084—Layers specifically deposited to enhance or enable the nucleation of further layers, i.e. seed layers
- H01L2221/1089—Stacks of seed layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
- H01L23/53204—Conductive materials
- H01L23/53209—Conductive materials based on metals, e.g. alloys, metal silicides
- H01L23/53257—Conductive materials based on metals, e.g. alloys, metal silicides the principal metal being a refractory metal
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystallography & Structural Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
- Electrodes Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Catalysts (AREA)
Description
四塩化酸化モリブデン(MoOCl4)/水素(H2)による化学蒸着(CVD)モリブデン堆積を、以下のプロセス条件を使用して実施した:その上に基板を保持したステージ 700℃;そこから蒸着操作のために四塩化酸化モリブデン(MoOCl4)前駆体を分配したアンプル 70℃;蒸着操作中の圧力 60torr;アルゴンキャリアガス流 50標準立方センチメートル/分(sccm)及び2000標準立方フィート/分(sccm)の水素(H2)。
図5及び図6は、以下のプロセス条件を含むCVD四塩化酸化モリブデン(MoOCl4)/水素(H2)堆積プロセスにより生成された堆積モリブデン膜の走査型電子顕微鏡(SEM)像である:基板=50Å TiN;アンプル温度=70℃;ステージ温度=700℃;圧力=60torr;アルゴンキャリアガス流量=50sccm;アルゴンパージガス流量=0sccm;水素ガス流量=2000sccm;蒸着時間=300秒;堆積前のTiN厚さ=70.9Å;堆積後のTiN厚さ=61.8Å;モリブデン厚さ=600.1Å;及び堆積モリブデンの比抵抗=15.1μΩ・cm。図5及び図6は、比較的大きな粒径を有する均一に堆積されたモリブデン膜を示す。
図7は、550℃(下の曲線)、600℃(600℃において下から二番目の曲線)、650℃(600℃において下から三番目の曲線)及び700℃(600℃において上の曲線)の温度のそれぞれの試験において実施した、MoOCl4/H2プロセス、アンプル温度70℃、圧力60torr、アルゴンキャリアガス流量50sccm及び水素ガス流量2000sccmによるモリブデンの堆積における、蒸着時間(秒)に対するモリブデン厚さ(オングストローム)のグラフである。核生成層を含まないMoOCl4/H2プロセスによるモリブデンの化学蒸着は、550℃の温度カットオフを示した。堆積速度は600℃−700℃(ステージ温度)で同等である。
図8は、アンプル温度70℃、圧力60torr、アルゴンキャリアガス流量50sccm及び水素ガス流量2000sccmの条件のMoOCl4/H2プロセスにより実施されたモリブデン堆積における、モリブデン厚さ(オングストローム)に対する膜比抵抗(μΩ・cm)のグラフであり、プロセスは、600℃(上の曲線)、650℃(中央の曲線)及び700℃(下の曲線)の温度の別々の試験において実施された。データは、600℃及び650℃で実施されたプロセスが、700℃のプロセスと比べてわずかに高い比抵抗を示したことを示す。ステージ温度700℃で、膜比抵抗は、500Å程度のモリブデン膜厚において約11μΩ・cmまで低下する。
図9は、モリブデン前駆体として四塩化酸化モリブデン(MoOCl4)を使用するモリブデン堆積(o)、及びモリブデン前駆体として昇華五塩化モリブデン(MoCl5)を使用するモリブデン堆積(Δ)における、試験番号に対する堆積速度(オングストローム/分)のグラフである。プロセス条件は何れの場合も以下の通りであった:アンプル温度=70℃;圧力=60torr;アルゴンキャリアガス流量=50sccm;水素ガス流量=2000sccm。
図10は、700℃で実施されたCVD堆積プロセスにおける、未精製MoCl5前駆体を使用して堆積されたモリブデン膜(Δ)、昇華MoCl5前駆体を使用して堆積されたモリブデン膜(□)、及び四塩化酸化モリブデン(MoOCl4)前駆体を使用して堆積されたモリブデン膜(◇)のモリブデン膜厚(オングストローム)に対する堆積モリブデン膜の膜比抵抗(μΩ・cm)のグラフである。プロセス条件は以下の通りであった:アンプル温度=70℃;圧力=60torr;アルゴンキャリアガス流量=50sccm;水素ガス流量=2000sccm。結果は、MoOCl4前駆体が、未精製MoCl5前駆体及び昇華MoCl5前駆体を使用して形成された膜と比べて、より高い比抵抗値を有するモリブデン膜を形成したことを示す。
ジボランによる基板のプレソーキングの効果を調査した。図11は、400℃のジボラン曝露、及び四塩化酸化モリブデン(MoOCl4)前駆体を使用する500℃のバルクモリブデン堆積(o)、並びに300℃のジボラン曝露、及び四塩化酸化モリブデン(MoOCl4)前駆体を使用する500℃のバルクモリブデン堆積(Δ)における、ジボランソーク時間(秒)に対するモリブデン膜厚(オングストローム)のグラフである。
図12及び図13は、500℃のジボラン核生成、及び水素の存在下で四塩化酸化モリブデン(MoOCl4)前駆体を使用する500℃のバルクモリブデン堆積を使用して生成された膜堆積物のSEM顕微鏡写真である。ジボランソークのためのプロセス条件は以下の通りであった:基板=50Å TiN;アンプル温度=70℃;圧力=40torr;ジボラン流量=35sccm;アルゴンキャリアガス流量=500sccm;水素流量=0sccm、時間=30秒。MoOCl4/H2バルクモリブデン堆積のためのプロセス条件は以下の通りであった:ステージ温度=500℃;圧力=60torr;アルゴンキャリアガス流量=50sccm;水素流量=2000sccm;時間=300秒。結果は、500℃のジボラン核生成によりモリブデンが堆積したが、モリブデンの下に過剰なホウ素層が形成されたことを示した。
モリブデン膜は、3サイクルの核生成、及びMoOCl4/H2によるモリブデンバルク堆積を用いてビア内に堆積された。ジボランソークにおけるプロセス条件は以下の通りであった:基板=ビアTEG;アンプル温度=70℃;ステージ温度=300℃;圧力=40torr;ジボラン流量=35sccm;アルゴンキャリアガス流量=250sccm;水素流量=0sccm、時間=60秒。MoOCl4/H2モリブデン堆積のためのプロセス条件は以下の通りであった:ステージ温度=550℃;圧力=60torr;アルゴンキャリアガス流量=50sccm;水素流量=2000sccm;時間=60秒。MoOCl4/B 2 H6核生成プロセス(3サイクル)が、ビア構造上の良好なステップカバレージを示した。
図14、ジボランソーク時間の効果を示す、プロセス条件:ステージ温度=300℃;圧力=44;ジボラン流量=35sccm;アルゴンキャリアガス流量=250sccmでの核生成を含む堆積プロセス、並びにプロセス条件:ステージ温度=550℃、アンプル温度=70℃;圧力=60torr;アルゴンキャリアガス流量=50sccm;水素ガス流量2000sccmでの600秒間のバルクモリブデン堆積における、ジボランソーク時間(秒)に対するモリブデン厚さ(Δ)(オングストローム)及び比抵抗(棒グラフの棒のマーカー)(μΩ・cm)のグラフである。データは、60秒以上のジボランプレソークにより、モリブデン堆積が550℃のステージ温度で可能になることを示す。示す通り、膜比抵抗は、より長いジボランソーク時間で大きくなる。
図15、プロセス条件:ステージ温度=300℃;圧力=40torr;ジボラン流量=35sccm;アルゴンキャリアガス流量=250sccm;時間=60秒での核生成を含む堆積プロセス、並びに条件:ステージ温度=550℃、アンプル温度=70℃;圧力=60torr;アルゴンキャリアガス流量=50sccm;及び水素ガス流量=2000sccmでのバルクモリブデン堆積における、MoOCl 4 /H2曝露時間(秒)に対するモリブデン厚さ(Δ)(オングストローム)及びMoOCl4/H2曝露時間に対する比抵抗(o)(μΩ・cm)のグラフである。示す通り、60秒のジボランプレソークでは、モリブデン堆積厚さは、550℃でMoOCl4/H2曝露時間と共に成長する。膜比抵抗は、400Åを超える厚さでは20μΩ・cm未満に低下する。
図16は、550℃で堆積されたモリブデン膜のSEM像であり、図17は、以下のジボランソークプロセス条件:基板=50Å TiN;アンプル温度=70℃;ステージ温度=300℃;圧力=40torr;ジボラン流量=35sccm;アルゴンキャリアガス流量=250sccm;水素ガス流量=0sccm;及び時間=90秒で堆積され、その後、以下のプロセス条件:ステージ温度=550℃;圧力=60torr;アルゴンキャリアガス流量=50sccm;水素ガス流量=2000sccm;及び時間=600秒(1サイクル)でのMoOCl4/H2プロセスによるバルクモリブデン堆積が続く、そのような膜のSEM断面像である。膜のXRF厚さは1693.6Åであり、比抵抗は21.6μΩ・cmと決定された。SEM像は、550℃、ジボランプレソーク90秒で堆積されたモリブデンにおいて、約40−70nmの粒径を示した。断面SEM像は、堆積モリブデンの下の約7.7nmのホウ素層を示す。
図18は、ジボラン核生成条件:ステージ温度=300℃;圧力=40torr;ジボラン流量=35sccm;アルゴンキャリアガス流量=250sccm;時間=60秒、及びバルクモリブデン堆積プロセス条件:アンプル温度=70℃、圧力=60torr;アルゴンキャリアガス流量=50sccm;水素ガス流量=2000sccm;時間=5分で実施された、ジボラン核生成ありのMoOCl4/H2プロセスにおける反応速度律速型を示す、ステージ温度(摂氏)に対するモリブデン厚さ(Δ)(オングストローム)及びステージ温度に対する比抵抗(o)(μΩ・cm)のグラフである。データは、ジボラン核生成ありのとき、モリブデン堆積カットオフ温度が500℃まで低下し、500℃から540℃の間の急激な堆積速度の低下を伴うことを示す。
図20は、核生成なし(Δ)及び核生成あり(o)で実施されたMoOCl4/H2反応の活性化エネルギーのアレニウスプロット(K=Ae−Ea/RT)である。データは、導かれたMoOCl4/H2反応の活性化エネルギーが、核生成なしのバルクモリブデンプロセス堆積については約233kJ/モルであり、ジボラン核生成ありのバルクモリブデン堆積プロセスについては約251kJ/モルであることを示す。
核生成及びCVDバルクモリブデン堆積MoOCl 4 /H 2 プロセスによるビア構造上にモリブデンを施すために以下の条件を用いた:基板=ビアTEG;アンプル温度=70℃、及びプロセス条件:ステージ温度=300℃;圧力=40torr;ジボラン流量=35sccm;アルゴンキャリアガス流量=250sccm;水素ガス流量=0sccm;時間=60秒で実施されたジボラン核生成(ソーク)プロセス、並びに条件:ステージ温度=520℃;圧力=60torr;アルゴンキャリアガス流量=50sccm;水素ガス流量=2000sccm;及び時間=600秒で実施されたバルクモリブデン堆積CVDプロセス。1サイクルのジボラン核生成を伴う520℃のMoOCl4/H2プロセスが、ビア構造上の約50%のステップカバレージ(下/上)を示したことを示した。
3つのビア構造に、ジボラン核生成(ソーク)及び520℃のCVDバルクモリブデン堆積MoOCl4/H2プロセスにより、それぞれ300秒、450秒及び600秒のバルク堆積プロセス時間でモリブデンが堆積された。プロセス条件は以下の通りであった:基板=ビアTEG;アンプル温度=70℃、及びプロセス条件:ステージ温度=300℃;圧力=40torr;ジボラン流量=35sccm;アルゴンキャリアガス流量=250sccm;水素ガス流量=0sccm;時間=60秒で実施されたジボラン核生成(ソーク)プロセス、並びに条件:ステージ温度=520℃;圧力=60torr;アルゴンキャリアガス流量=50sccm;水素ガス流量=2000sccm;及び時間=300秒(図25)、450秒(図26)及び600秒(図27)で実施されたバルクモリブデン堆積CVDプロセス。1サイクルのジボラン核生成を伴う520℃のMoOCl4/H2プロセスは、構造の「ネック」における制約のために、それぞれの蒸着時間の増加(すなわち、それぞれより長いプロセス時間)と共に徐々に低下するビア構造上のステップカバレージを示した。
3つのビア構造に、ジボラン核生成(ソーク)及びCVDバルクモリブデン堆積MoOCl4/H2プロセスにより、それぞれ510℃、520℃及び530℃のバルク堆積温度でモリブデンが堆積された。プロセス条件は以下の通りであった:基板=ビアTEG;アンプル温度=70℃、及びプロセス条件:ステージ温度=300℃;圧力=40torr;ジボラン流量=35sccm;アルゴンキャリアガス流量=250sccm;水素ガス流量=0sccm;時間=60秒で実施されたジボラン核生成(ソーク)プロセス、並びに条件:ステージ温度=510℃(図28)、520℃(図29)及び530℃(図30);圧力=60torr;アルゴンキャリアガス流量=50sccm;水素ガス流量=2000sccm;及び時間=600秒で実施されたバルクモリブデン堆積CVDプロセス。510℃のMoOCl 4 /H 2 プロセスは、粗い膜モルフォロジーのために不十分なステップカバレージを示した。520℃のプロセスは、ビア構造上の約50%のステップカバレージを示した。ステップカバレージが、530℃のプロセスについては約30%まで低下した。
3つのビア構造に、ジボラン核生成(ソーク)及びCVDバルクモリブデン堆積MoOCl4/H 2 プロセスにより、それぞれ45秒、60秒及び75秒のジボラン投与(ソーク)時間でモリブデンが堆積された。プロセス条件は以下の通りであった:基板=ビアTEG;アンプル温度=70℃、及びプロセス条件:ステージ温度=300℃;圧力=40torr;ジボラン流量=35sccm;アルゴンキャリアガス流量=250sccm;水素ガス流量=0sccmで実施されたジボラン核生成(ソーク)プロセス、並びに条件:ステージ温度=520℃;圧力=60torr;アルゴンキャリアガス流量=50sccm;水素ガス流量=2000sccm;及び時間=450秒で実施されたバルクモリブデン堆積CVDプロセス。60秒及び75秒のジボランソーク条件において、ホウ素層が堆積モリブデンの下にはっきり見えた。
3つのビア構造に、以下のプロセス条件:基板=ビアTEG;アンプル温度=70℃、及びプロセス条件:ステージ温度=300℃;圧力=40torr;ジボラン流量=35sccm;アルゴンキャリアガス流量=250sccm;水素ガス流量=0sccm;及び時間=45秒で実施されたジボラン核生成(ソーク)プロセス、並びに条件:ステージ温度=520℃;圧力=60torr;アルゴンキャリアガス流量=50sccm;水素ガス流量=2000sccm;パルス幅=5秒;パージ時間=10秒;及びサイクル数=120で実施されたパルスモリブデン堆積CVDプロセスでの、60torrで120サイクルの間実施されたパルスCVDプロセスを含むジボラン核生成(ソーク)及びCVDバルクモリブデン堆積MoOCl4/H2プロセスによりモリブデンが堆積され、ビアは、510Åのモリブデン膜厚を有する上部、375Åのモリブデン膜厚を有する下部及び480Åのモリブデン膜厚を有するその中間部を有する。各パルス間の10秒のパージを含むパルスCVDプロセスは、構造のネック付近の堆積の減少を示した。ステップカバレージは、厚さ約500Åのバルクモリブデン堆積において、75%程度であった。
ビア構造に、40torrで120サイクルの間実施されたパルスCVDプロセスを含むジボラン核生成(ソーク)及びCVDバルクモリブデン堆積MoOCl4/H2プロセスによりモリブデンが堆積され、ビアは、320Åのモリブデン膜厚を有する上部、520Åのモリブデン膜厚を有する中間部及び460Åのモリブデン膜厚を有する下部を有し、プロセスは、以下のプロセス条件:基板=ビアTEG;アンプル温度=70℃で、プロセス条件:ステージ温度=300℃;圧力=40torr;ジボラン流量=35sccm;アルゴンキャリアガス流量=250sccm;水素ガス流量=0sccm;及び時間=45秒で実施されたジボラン核生成(ソーク)プロセス、並びに条件:ステージ温度=520℃;圧力=40torr;アルゴンキャリアガス流量=50sccm;水素ガス流量=2000sccm;パルス幅=5秒;パージ時間=10秒;及びサイクル数=120で実施されたパルスモリブデン堆積CVDプロセスと共に実施された。40torrでのパルスCVDプロセスは、優れたステップカバレージ、並びに上部のより薄い堆積及びビア内部のより厚い堆積を示した。このビア構造上の名目上のステップカバレージは100%を超えた。
ビア構造に、40torrで240サイクルの間実施されたパルスCVDプロセスを含むジボラン核生成(ソーク)及びCVDバルクモリブデン堆積MoOCl4/H2プロセスによりモリブデンが堆積され、ビアは、720Åのモリブデン膜厚を有する中間部及び460Åのモリブデン膜厚を有する下部を有し、プロセスは、以下のプロセス条件:基板=ビアTEG;アンプル温度=70℃で、プロセス条件:ステージ温度=300℃;圧力=40torr;ジボラン流量=35sccm;アルゴンキャリアガス流量=250sccm;水素ガス流量=0sccm;及び時間=45秒で実施されたジボラン核生成(ソーク)プロセス、並びに条件:ステージ温度=520℃;圧力=40torr;アルゴンキャリアガス流量=50sccm;水素ガス流量=2000sccm;パルス幅=5秒;パージ時間=10秒;及びサイクル数=240で実施されたパルスモリブデン堆積CVDプロセスと共に実施された。圧力40torrで120回から240回にサイクル数を増加しても、ビアのネックにおけるピンチオフのために、ボイドを含まない充填は実現しなかった。
ホウ素核生成表面(CVD B)におけるMoOCl4/H2プロセスのエッチ速度を調査した。以下の条件でプロセスを実施した:ステージ温度=500℃;圧力=20torr;アルゴンキャリアガス流量=50sccm;水素ガス流量=2000sccm。別の条件及び得られたエッチ速度を表1に示す:
MoOCl4/H2プロセスを様々な基板に対して実施した。以下の条件でプロセスを実施した:ステージ温度=500℃;圧力=60torr;アルゴンキャリアガス流量=50sccm;水素ガス流量=2000sccm。別の条件及び基板を表2に示す:
上記は、MoOCl4前駆体を使用して堆積されたCVDモリブデン膜が、厚さ400Åで15μΩ・cm未満の良好な膜比抵抗を示したことを示し、SIMS分析は、MoOCl4前駆体を使用して堆積された膜において、バルクモリブデン膜中の酸素濃度が1原子パーセントをはるかに下回ることを示した。TiN基板上で、CVD MoOCl4/H2プロセスは、ジボラン核生成なしでおよそ560℃の堆積温度カットオフを示し、ジボラン核生成ありで約500℃のカットオフを示した。アレニウスプロットから導かれた活性化エネルギーは、核生成なしのプロセスについては約223kJ/モル、ジボラン核生成ありのプロセスについては約251kJ/モルである。ジボラン核生成ありのCVD MoOCl4/H2プロセスは、ビア構造上の優れたステップカバレージを示し、パルスCVDプロセスは、膜厚500Åで100%のステップカバレージを実現し、さらにはそれを超えることが示された。
Claims (20)
- 基板上にモリブデン含有材料を生成する方法であって、蒸着条件下で基板を四塩化酸化モリブデン(MoOCl4)蒸気と接触させ、基板上にモリブデン含有材料を堆積させることを含む、方法。
- 基板上に核生成表面を確立することを含み、且つ、四塩化酸化モリブデン(MoOCl4)蒸気との基板の前記接触が、基板の核生成表面を四塩化酸化モリブデン(MoOCl4)蒸気と接触させ、基板上に前記モリブデン含有材料を堆積させることを含む、請求項1に記載の方法。
- 基板上に前記核生成表面を確立することが、前記基板をジボラン蒸気と、任意選択的に別個に四塩化酸化モリブデン(MoOCl4)蒸気と接触させることを含む、請求項2に記載の方法。
- 核生成表面を確立することが、基板をジボラン蒸気と、別個に四塩化酸化モリブデン(MoOCl4)蒸気と接触させる複数のサイクルを含む、請求項3に記載の方法。
- 基板が、窒化チタン層をその上に有する二酸化シリコンを含む半導体デバイス基板を含み、かつジボラン蒸気との窒化チタン層の接触が、300℃−450℃の範囲内の温度で実施される、請求項3に記載の方法。
- 蒸着条件がパルス蒸着条件である、請求項1に記載の方法。
- 堆積モリブデン含有材料が高々20μΩ・cmの比抵抗を有するように前記蒸着条件が選択される、請求項1に記載の方法。
- モリブデン含有材料が、400℃−600℃の範囲内の温度で堆積される、請求項1に記載の方法。
- 四塩化酸化モリブデン(MoOCl4)蒸気を生成させるために、四塩化酸化モリブデン(MoOCl4)を揮発させることを含む、請求項1に記載の方法。
- モリブデン含有材料が元素状モリブデン材料を含むように、前記蒸着条件が、還元雰囲気を含む、請求項1に記載の方法。
- モリブデン含有材料が酸化モリブデンを含む、請求項1に記載の方法。
- 基板が、TiN、Mo、MoC、B、SiO2、W及びWCNのうちの一又は複数を含む、請求項1に記載の方法。
- 基板が、窒化チタン層をその上に有する二酸化シリコンを含む半導体デバイス基板を含み、モリブデン含有材料が核生成層上に堆積される、窒化チタン層上に核生成表面を形成することを含む、請求項1に記載の方法。
- 核生成表面が、ジボラン蒸気との、別個に四塩化酸化モリブデン(MoOCl4)蒸気との窒化チタン層の接触を含むパルスCVD又はALD堆積により形成される、請求項13に記載の方法。
- 基板上に半導体デバイスを製造するためのプロセスにおいて実施される、請求項1に記載の方法。
- 半導体デバイスが、DRAMデバイス及び3−D NANDデバイスのうちの少なくとも1つを含む、請求項15に記載の方法。
- 基板が、モリブデン含有材料が内部に堆積されるビアを含む、請求項1に記載の方法。
- モリブデン含有材料が、90%−110%のステップカバレージで前記基板上に堆積される、請求項1に記載の方法。
- 窒化チタン層をその上に有する二酸化シリコンを含む半導体デバイス基板上にモリブデン含有材料を生成する方法であって、窒化チタン層をジボラン蒸気と接触させることにより窒化チタン層上に核生成表面を形成すること、蒸着条件下で核生成表面を四塩化酸化モリブデン(MoOCl4)蒸気と接触させ、基板上にモリブデン含有材料を堆積させることを含み、堆積モリブデン含有材料が高々20μΩ・cmの比抵抗を有するように蒸着条件が選択される、方法。
- 基板上にモリブデン含有材料を生成する方法であって、基板上に核生成表面を確立する接触条件下で基板をジボランと接触させ、かつ水素の存在下で四塩化酸化モリブデン(MoOCl4)前駆体を使用する化学蒸着プロセスによりモリブデンを核生成表面に堆積させて、基板上にモリブデン含有材料を生成することを含む、方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201662362582P | 2016-07-14 | 2016-07-14 | |
US62/362,582 | 2016-07-14 | ||
PCT/US2017/041883 WO2018013778A1 (en) | 2016-07-14 | 2017-07-13 | Cvd mo deposition by using mooc14 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2019527302A JP2019527302A (ja) | 2019-09-26 |
JP6793243B2 true JP6793243B2 (ja) | 2020-12-02 |
Family
ID=59579905
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2019501911A Active JP6793243B2 (ja) | 2016-07-14 | 2017-07-13 | MoOCl4を使用することによるCVD Mo堆積 |
Country Status (6)
Country | Link |
---|---|
US (2) | US20180019165A1 (ja) |
JP (1) | JP6793243B2 (ja) |
KR (1) | KR102266610B1 (ja) |
CN (1) | CN109661481B (ja) |
TW (1) | TWI648421B (ja) |
WO (1) | WO2018013778A1 (ja) |
Families Citing this family (294)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9394608B2 (en) | 2009-04-06 | 2016-07-19 | Asm America, Inc. | Semiconductor processing reactor and components thereof |
US8802201B2 (en) | 2009-08-14 | 2014-08-12 | Asm America, Inc. | Systems and methods for thin-film deposition of metal oxides using excited nitrogen-oxygen species |
US9312155B2 (en) | 2011-06-06 | 2016-04-12 | Asm Japan K.K. | High-throughput semiconductor-processing apparatus equipped with multiple dual-chamber modules |
US10854498B2 (en) | 2011-07-15 | 2020-12-01 | Asm Ip Holding B.V. | Wafer-supporting device and method for producing same |
US20130023129A1 (en) | 2011-07-20 | 2013-01-24 | Asm America, Inc. | Pressure transmitter for a semiconductor processing environment |
US9017481B1 (en) | 2011-10-28 | 2015-04-28 | Asm America, Inc. | Process feed management for semiconductor substrate processing |
US10714315B2 (en) | 2012-10-12 | 2020-07-14 | Asm Ip Holdings B.V. | Semiconductor reaction chamber showerhead |
US20160376700A1 (en) | 2013-02-01 | 2016-12-29 | Asm Ip Holding B.V. | System for treatment of deposition reactor |
US10683571B2 (en) | 2014-02-25 | 2020-06-16 | Asm Ip Holding B.V. | Gas supply manifold and method of supplying gases to chamber using same |
US10167557B2 (en) | 2014-03-18 | 2019-01-01 | Asm Ip Holding B.V. | Gas distribution system, reactor including the system, and methods of using the same |
US11015245B2 (en) | 2014-03-19 | 2021-05-25 | Asm Ip Holding B.V. | Gas-phase reactor and system having exhaust plenum and components thereof |
US10858737B2 (en) | 2014-07-28 | 2020-12-08 | Asm Ip Holding B.V. | Showerhead assembly and components thereof |
US9890456B2 (en) | 2014-08-21 | 2018-02-13 | Asm Ip Holding B.V. | Method and system for in situ formation of gas-phase compounds |
US9657845B2 (en) | 2014-10-07 | 2017-05-23 | Asm Ip Holding B.V. | Variable conductance gas distribution apparatus and method |
US10941490B2 (en) | 2014-10-07 | 2021-03-09 | Asm Ip Holding B.V. | Multiple temperature range susceptor, assembly, reactor and system including the susceptor, and methods of using the same |
US10276355B2 (en) | 2015-03-12 | 2019-04-30 | Asm Ip Holding B.V. | Multi-zone reactor, system including the reactor, and method of using the same |
US10458018B2 (en) | 2015-06-26 | 2019-10-29 | Asm Ip Holding B.V. | Structures including metal carbide material, devices including the structures, and methods of forming same |
US10600673B2 (en) | 2015-07-07 | 2020-03-24 | Asm Ip Holding B.V. | Magnetic susceptor to baseplate seal |
US10211308B2 (en) | 2015-10-21 | 2019-02-19 | Asm Ip Holding B.V. | NbMC layers |
US11139308B2 (en) | 2015-12-29 | 2021-10-05 | Asm Ip Holding B.V. | Atomic layer deposition of III-V compounds to form V-NAND devices |
US10529554B2 (en) | 2016-02-19 | 2020-01-07 | Asm Ip Holding B.V. | Method for forming silicon nitride film selectively on sidewalls or flat surfaces of trenches |
US10190213B2 (en) | 2016-04-21 | 2019-01-29 | Asm Ip Holding B.V. | Deposition of metal borides |
US10865475B2 (en) | 2016-04-21 | 2020-12-15 | Asm Ip Holding B.V. | Deposition of metal borides and silicides |
US10367080B2 (en) | 2016-05-02 | 2019-07-30 | Asm Ip Holding B.V. | Method of forming a germanium oxynitride film |
US10032628B2 (en) | 2016-05-02 | 2018-07-24 | Asm Ip Holding B.V. | Source/drain performance through conformal solid state doping |
US11453943B2 (en) | 2016-05-25 | 2022-09-27 | Asm Ip Holding B.V. | Method for forming carbon-containing silicon/metal oxide or nitride film by ALD using silicon precursor and hydrocarbon precursor |
US9859151B1 (en) | 2016-07-08 | 2018-01-02 | Asm Ip Holding B.V. | Selective film deposition method to form air gaps |
US10612137B2 (en) | 2016-07-08 | 2020-04-07 | Asm Ip Holdings B.V. | Organic reactants for atomic layer deposition |
US10714385B2 (en) | 2016-07-19 | 2020-07-14 | Asm Ip Holding B.V. | Selective deposition of tungsten |
US9812320B1 (en) | 2016-07-28 | 2017-11-07 | Asm Ip Holding B.V. | Method and apparatus for filling a gap |
US9887082B1 (en) | 2016-07-28 | 2018-02-06 | Asm Ip Holding B.V. | Method and apparatus for filling a gap |
KR102532607B1 (ko) | 2016-07-28 | 2023-05-15 | 에이에스엠 아이피 홀딩 비.브이. | 기판 가공 장치 및 그 동작 방법 |
US10573522B2 (en) | 2016-08-16 | 2020-02-25 | Lam Research Corporation | Method for preventing line bending during metal fill process |
US10643826B2 (en) | 2016-10-26 | 2020-05-05 | Asm Ip Holdings B.V. | Methods for thermally calibrating reaction chambers |
US11532757B2 (en) | 2016-10-27 | 2022-12-20 | Asm Ip Holding B.V. | Deposition of charge trapping layers |
US10229833B2 (en) | 2016-11-01 | 2019-03-12 | Asm Ip Holding B.V. | Methods for forming a transition metal nitride film on a substrate by atomic layer deposition and related semiconductor device structures |
US10714350B2 (en) | 2016-11-01 | 2020-07-14 | ASM IP Holdings, B.V. | Methods for forming a transition metal niobium nitride film on a substrate by atomic layer deposition and related semiconductor device structures |
US10643904B2 (en) | 2016-11-01 | 2020-05-05 | Asm Ip Holdings B.V. | Methods for forming a semiconductor device and related semiconductor device structures |
US10134757B2 (en) | 2016-11-07 | 2018-11-20 | Asm Ip Holding B.V. | Method of processing a substrate and a device manufactured by using the method |
KR102546317B1 (ko) | 2016-11-15 | 2023-06-21 | 에이에스엠 아이피 홀딩 비.브이. | 기체 공급 유닛 및 이를 포함하는 기판 처리 장치 |
US10453744B2 (en) | 2016-11-23 | 2019-10-22 | Entegris, Inc. | Low temperature molybdenum film deposition utilizing boron nucleation layers |
KR20180068582A (ko) | 2016-12-14 | 2018-06-22 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 |
US11447861B2 (en) | 2016-12-15 | 2022-09-20 | Asm Ip Holding B.V. | Sequential infiltration synthesis apparatus and a method of forming a patterned structure |
US11581186B2 (en) | 2016-12-15 | 2023-02-14 | Asm Ip Holding B.V. | Sequential infiltration synthesis apparatus |
KR20180070971A (ko) | 2016-12-19 | 2018-06-27 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 |
US10269558B2 (en) | 2016-12-22 | 2019-04-23 | Asm Ip Holding B.V. | Method of forming a structure on a substrate |
US10867788B2 (en) | 2016-12-28 | 2020-12-15 | Asm Ip Holding B.V. | Method of forming a structure on a substrate |
US11390950B2 (en) | 2017-01-10 | 2022-07-19 | Asm Ip Holding B.V. | Reactor system and method to reduce residue buildup during a film deposition process |
US10655221B2 (en) | 2017-02-09 | 2020-05-19 | Asm Ip Holding B.V. | Method for depositing oxide film by thermal ALD and PEALD |
US10468261B2 (en) | 2017-02-15 | 2019-11-05 | Asm Ip Holding B.V. | Methods for forming a metallic film on a substrate by cyclical deposition and related semiconductor device structures |
US10529563B2 (en) | 2017-03-29 | 2020-01-07 | Asm Ip Holdings B.V. | Method for forming doped metal oxide films on a substrate by cyclical deposition and related semiconductor device structures |
USD876504S1 (en) | 2017-04-03 | 2020-02-25 | Asm Ip Holding B.V. | Exhaust flow control ring for semiconductor deposition apparatus |
KR102572271B1 (ko) * | 2017-04-10 | 2023-08-28 | 램 리써치 코포레이션 | 몰리브덴을 함유하는 저 저항률 막들 |
KR102457289B1 (ko) | 2017-04-25 | 2022-10-21 | 에이에스엠 아이피 홀딩 비.브이. | 박막 증착 방법 및 반도체 장치의 제조 방법 |
US10892156B2 (en) | 2017-05-08 | 2021-01-12 | Asm Ip Holding B.V. | Methods for forming a silicon nitride film on a substrate and related semiconductor device structures |
US10770286B2 (en) | 2017-05-08 | 2020-09-08 | Asm Ip Holdings B.V. | Methods for selectively forming a silicon nitride film on a substrate and related semiconductor device structures |
US10886123B2 (en) | 2017-06-02 | 2021-01-05 | Asm Ip Holding B.V. | Methods for forming low temperature semiconductor layers and related semiconductor device structures |
US11306395B2 (en) | 2017-06-28 | 2022-04-19 | Asm Ip Holding B.V. | Methods for depositing a transition metal nitride film on a substrate by atomic layer deposition and related deposition apparatus |
US10685834B2 (en) | 2017-07-05 | 2020-06-16 | Asm Ip Holdings B.V. | Methods for forming a silicon germanium tin layer and related semiconductor device structures |
KR20190009245A (ko) | 2017-07-18 | 2019-01-28 | 에이에스엠 아이피 홀딩 비.브이. | 반도체 소자 구조물 형성 방법 및 관련된 반도체 소자 구조물 |
US10541333B2 (en) | 2017-07-19 | 2020-01-21 | Asm Ip Holding B.V. | Method for depositing a group IV semiconductor and related semiconductor device structures |
US11374112B2 (en) | 2017-07-19 | 2022-06-28 | Asm Ip Holding B.V. | Method for depositing a group IV semiconductor and related semiconductor device structures |
US11018002B2 (en) | 2017-07-19 | 2021-05-25 | Asm Ip Holding B.V. | Method for selectively depositing a Group IV semiconductor and related semiconductor device structures |
US10590535B2 (en) | 2017-07-26 | 2020-03-17 | Asm Ip Holdings B.V. | Chemical treatment, deposition and/or infiltration apparatus and method for using the same |
US10692741B2 (en) | 2017-08-08 | 2020-06-23 | Asm Ip Holdings B.V. | Radiation shield |
US10770336B2 (en) | 2017-08-08 | 2020-09-08 | Asm Ip Holding B.V. | Substrate lift mechanism and reactor including same |
US11769682B2 (en) | 2017-08-09 | 2023-09-26 | Asm Ip Holding B.V. | Storage apparatus for storing cassettes for substrates and processing apparatus equipped therewith |
US11139191B2 (en) | 2017-08-09 | 2021-10-05 | Asm Ip Holding B.V. | Storage apparatus for storing cassettes for substrates and processing apparatus equipped therewith |
US10249524B2 (en) | 2017-08-09 | 2019-04-02 | Asm Ip Holding B.V. | Cassette holder assembly for a substrate cassette and holding member for use in such assembly |
USD900036S1 (en) | 2017-08-24 | 2020-10-27 | Asm Ip Holding B.V. | Heater electrical connector and adapter |
US11830730B2 (en) | 2017-08-29 | 2023-11-28 | Asm Ip Holding B.V. | Layer forming method and apparatus |
US11056344B2 (en) * | 2017-08-30 | 2021-07-06 | Asm Ip Holding B.V. | Layer forming method |
US11295980B2 (en) * | 2017-08-30 | 2022-04-05 | Asm Ip Holding B.V. | Methods for depositing a molybdenum metal film over a dielectric surface of a substrate by a cyclical deposition process and related semiconductor device structures |
KR102491945B1 (ko) | 2017-08-30 | 2023-01-26 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 |
US20190067095A1 (en) * | 2017-08-30 | 2019-02-28 | Asm Ip Holding B.V. | Layer forming method |
KR102401446B1 (ko) | 2017-08-31 | 2022-05-24 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 |
KR102630301B1 (ko) | 2017-09-21 | 2024-01-29 | 에이에스엠 아이피 홀딩 비.브이. | 침투성 재료의 순차 침투 합성 방법 처리 및 이를 이용하여 형성된 구조물 및 장치 |
US10844484B2 (en) | 2017-09-22 | 2020-11-24 | Asm Ip Holding B.V. | Apparatus for dispensing a vapor phase reactant to a reaction chamber and related methods |
US10658205B2 (en) | 2017-09-28 | 2020-05-19 | Asm Ip Holdings B.V. | Chemical dispensing apparatus and methods for dispensing a chemical to a reaction chamber |
US10403504B2 (en) | 2017-10-05 | 2019-09-03 | Asm Ip Holding B.V. | Method for selectively depositing a metallic film on a substrate |
US10319588B2 (en) | 2017-10-10 | 2019-06-11 | Asm Ip Holding B.V. | Method for depositing a metal chalcogenide on a substrate by cyclical deposition |
US10923344B2 (en) | 2017-10-30 | 2021-02-16 | Asm Ip Holding B.V. | Methods for forming a semiconductor structure and related semiconductor structures |
KR102443047B1 (ko) | 2017-11-16 | 2022-09-14 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 방법 및 그에 의해 제조된 장치 |
US10910262B2 (en) | 2017-11-16 | 2021-02-02 | Asm Ip Holding B.V. | Method of selectively depositing a capping layer structure on a semiconductor device structure |
US11022879B2 (en) | 2017-11-24 | 2021-06-01 | Asm Ip Holding B.V. | Method of forming an enhanced unexposed photoresist layer |
TWI779134B (zh) | 2017-11-27 | 2022-10-01 | 荷蘭商Asm智慧財產控股私人有限公司 | 用於儲存晶圓匣的儲存裝置及批爐總成 |
WO2019103610A1 (en) | 2017-11-27 | 2019-05-31 | Asm Ip Holding B.V. | Apparatus including a clean mini environment |
US10872771B2 (en) | 2018-01-16 | 2020-12-22 | Asm Ip Holding B. V. | Method for depositing a material film on a substrate within a reaction chamber by a cyclical deposition process and related device structures |
US11560625B2 (en) * | 2018-01-19 | 2023-01-24 | Entegris, Inc. | Vapor deposition of molybdenum using a bis(alkyl-arene) molybdenum precursor |
TW202325889A (zh) * | 2018-01-19 | 2023-07-01 | 荷蘭商Asm 智慧財產控股公司 | 沈積方法 |
US11482412B2 (en) | 2018-01-19 | 2022-10-25 | Asm Ip Holding B.V. | Method for depositing a gap-fill layer by plasma-assisted deposition |
USD903477S1 (en) | 2018-01-24 | 2020-12-01 | Asm Ip Holdings B.V. | Metal clamp |
US11018047B2 (en) | 2018-01-25 | 2021-05-25 | Asm Ip Holding B.V. | Hybrid lift pin |
USD880437S1 (en) | 2018-02-01 | 2020-04-07 | Asm Ip Holding B.V. | Gas supply plate for semiconductor manufacturing apparatus |
US11081345B2 (en) | 2018-02-06 | 2021-08-03 | Asm Ip Holding B.V. | Method of post-deposition treatment for silicon oxide film |
US10896820B2 (en) | 2018-02-14 | 2021-01-19 | Asm Ip Holding B.V. | Method for depositing a ruthenium-containing film on a substrate by a cyclical deposition process |
CN111699278B (zh) | 2018-02-14 | 2023-05-16 | Asm Ip私人控股有限公司 | 通过循环沉积工艺在衬底上沉积含钌膜的方法 |
US10731249B2 (en) | 2018-02-15 | 2020-08-04 | Asm Ip Holding B.V. | Method of forming a transition metal containing film on a substrate by a cyclical deposition process, a method for supplying a transition metal halide compound to a reaction chamber, and related vapor deposition apparatus |
US10658181B2 (en) | 2018-02-20 | 2020-05-19 | Asm Ip Holding B.V. | Method of spacer-defined direct patterning in semiconductor fabrication |
KR102636427B1 (ko) | 2018-02-20 | 2024-02-13 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 방법 및 장치 |
US10975470B2 (en) | 2018-02-23 | 2021-04-13 | Asm Ip Holding B.V. | Apparatus for detecting or monitoring for a chemical precursor in a high temperature environment |
US11473195B2 (en) | 2018-03-01 | 2022-10-18 | Asm Ip Holding B.V. | Semiconductor processing apparatus and a method for processing a substrate |
US11629406B2 (en) | 2018-03-09 | 2023-04-18 | Asm Ip Holding B.V. | Semiconductor processing apparatus comprising one or more pyrometers for measuring a temperature of a substrate during transfer of the substrate |
US11114283B2 (en) | 2018-03-16 | 2021-09-07 | Asm Ip Holding B.V. | Reactor, system including the reactor, and methods of manufacturing and using same |
KR102646467B1 (ko) | 2018-03-27 | 2024-03-11 | 에이에스엠 아이피 홀딩 비.브이. | 기판 상에 전극을 형성하는 방법 및 전극을 포함하는 반도체 소자 구조 |
US11230766B2 (en) | 2018-03-29 | 2022-01-25 | Asm Ip Holding B.V. | Substrate processing apparatus and method |
US11088002B2 (en) | 2018-03-29 | 2021-08-10 | Asm Ip Holding B.V. | Substrate rack and a substrate processing system and method |
KR102501472B1 (ko) | 2018-03-30 | 2023-02-20 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 방법 |
CN112041980A (zh) * | 2018-04-20 | 2020-12-04 | 恩特格里斯公司 | 利用硼成核层的低温钼膜沉积 |
SG11202009514WA (en) * | 2018-04-24 | 2020-11-27 | Applied Materials Inc | Tungsten deposition without barrier layer |
WO2019209289A1 (en) * | 2018-04-25 | 2019-10-31 | Entegris, Inc. | Low temperature molybdenum film depositon utilizing boron nucleation layers |
CN112262457A (zh) | 2018-05-03 | 2021-01-22 | 朗姆研究公司 | 在3d nand结构中沉积钨和其他金属的方法 |
KR20190128558A (ko) | 2018-05-08 | 2019-11-18 | 에이에스엠 아이피 홀딩 비.브이. | 기판 상에 산화물 막을 주기적 증착 공정에 의해 증착하기 위한 방법 및 관련 소자 구조 |
TWI816783B (zh) | 2018-05-11 | 2023-10-01 | 荷蘭商Asm 智慧財產控股公司 | 用於基板上形成摻雜金屬碳化物薄膜之方法及相關半導體元件結構 |
KR102596988B1 (ko) | 2018-05-28 | 2023-10-31 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 방법 및 그에 의해 제조된 장치 |
US11718913B2 (en) | 2018-06-04 | 2023-08-08 | Asm Ip Holding B.V. | Gas distribution system and reactor system including same |
US11270899B2 (en) | 2018-06-04 | 2022-03-08 | Asm Ip Holding B.V. | Wafer handling chamber with moisture reduction |
US11286562B2 (en) | 2018-06-08 | 2022-03-29 | Asm Ip Holding B.V. | Gas-phase chemical reactor and method of using same |
KR102568797B1 (ko) | 2018-06-21 | 2023-08-21 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 시스템 |
US10797133B2 (en) | 2018-06-21 | 2020-10-06 | Asm Ip Holding B.V. | Method for depositing a phosphorus doped silicon arsenide film and related semiconductor device structures |
US11492703B2 (en) | 2018-06-27 | 2022-11-08 | Asm Ip Holding B.V. | Cyclic deposition methods for forming metal-containing material and films and structures including the metal-containing material |
CN112292477A (zh) | 2018-06-27 | 2021-01-29 | Asm Ip私人控股有限公司 | 用于形成含金属的材料的循环沉积方法及包含含金属的材料的膜和结构 |
KR20200002519A (ko) | 2018-06-29 | 2020-01-08 | 에이에스엠 아이피 홀딩 비.브이. | 박막 증착 방법 및 반도체 장치의 제조 방법 |
US10612136B2 (en) | 2018-06-29 | 2020-04-07 | ASM IP Holding, B.V. | Temperature-controlled flange and reactor system including same |
US10388513B1 (en) | 2018-07-03 | 2019-08-20 | Asm Ip Holding B.V. | Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition |
US10755922B2 (en) | 2018-07-03 | 2020-08-25 | Asm Ip Holding B.V. | Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition |
US10767789B2 (en) | 2018-07-16 | 2020-09-08 | Asm Ip Holding B.V. | Diaphragm valves, valve components, and methods for forming valve components |
TW202020203A (zh) * | 2018-07-26 | 2020-06-01 | 美商蘭姆研究公司 | 純金屬膜的沉積 |
US11053591B2 (en) | 2018-08-06 | 2021-07-06 | Asm Ip Holding B.V. | Multi-port gas injection system and reactor system including same |
US10883175B2 (en) | 2018-08-09 | 2021-01-05 | Asm Ip Holding B.V. | Vertical furnace for processing substrates and a liner for use therein |
US10829852B2 (en) | 2018-08-16 | 2020-11-10 | Asm Ip Holding B.V. | Gas distribution device for a wafer processing apparatus |
JP7422971B2 (ja) | 2018-08-20 | 2024-01-29 | エーエスエム・アイピー・ホールディング・ベー・フェー | 基材および関連する半導体デバイス構造の誘電体表面上にモリブデン金属膜を堆積する方法 |
JP2020029618A (ja) * | 2018-08-20 | 2020-02-27 | アーエスエム・イーぺー・ホールディング・ベスローテン・フェンノートシャップ | 周期的堆積プロセスによって基材の誘電体表面上にモリブデン金属膜を堆積させる方法および関連する半導体デバイス構造 |
US11430674B2 (en) | 2018-08-22 | 2022-08-30 | Asm Ip Holding B.V. | Sensor array, apparatus for dispensing a vapor phase reactant to a reaction chamber and related methods |
US11024523B2 (en) | 2018-09-11 | 2021-06-01 | Asm Ip Holding B.V. | Substrate processing apparatus and method |
KR20200030162A (ko) | 2018-09-11 | 2020-03-20 | 에이에스엠 아이피 홀딩 비.브이. | 박막 증착 방법 |
US11049751B2 (en) | 2018-09-14 | 2021-06-29 | Asm Ip Holding B.V. | Cassette supply system to store and handle cassettes and processing apparatus equipped therewith |
CN110970344A (zh) | 2018-10-01 | 2020-04-07 | Asm Ip控股有限公司 | 衬底保持设备、包含所述设备的系统及其使用方法 |
US11232963B2 (en) | 2018-10-03 | 2022-01-25 | Asm Ip Holding B.V. | Substrate processing apparatus and method |
KR102592699B1 (ko) | 2018-10-08 | 2023-10-23 | 에이에스엠 아이피 홀딩 비.브이. | 기판 지지 유닛 및 이를 포함하는 박막 증착 장치와 기판 처리 장치 |
US10847365B2 (en) | 2018-10-11 | 2020-11-24 | Asm Ip Holding B.V. | Method of forming conformal silicon carbide film by cyclic CVD |
US10811256B2 (en) | 2018-10-16 | 2020-10-20 | Asm Ip Holding B.V. | Method for etching a carbon-containing feature |
KR102546322B1 (ko) | 2018-10-19 | 2023-06-21 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 및 기판 처리 방법 |
KR102605121B1 (ko) | 2018-10-19 | 2023-11-23 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 및 기판 처리 방법 |
US20200131628A1 (en) * | 2018-10-24 | 2020-04-30 | Entegris, Inc. | Method for forming molybdenum films on a substrate |
USD948463S1 (en) | 2018-10-24 | 2022-04-12 | Asm Ip Holding B.V. | Susceptor for semiconductor substrate supporting apparatus |
US11087997B2 (en) | 2018-10-31 | 2021-08-10 | Asm Ip Holding B.V. | Substrate processing apparatus for processing substrates |
KR20200051105A (ko) | 2018-11-02 | 2020-05-13 | 에이에스엠 아이피 홀딩 비.브이. | 기판 지지 유닛 및 이를 포함하는 기판 처리 장치 |
US11572620B2 (en) | 2018-11-06 | 2023-02-07 | Asm Ip Holding B.V. | Methods for selectively depositing an amorphous silicon film on a substrate |
US11031242B2 (en) | 2018-11-07 | 2021-06-08 | Asm Ip Holding B.V. | Methods for depositing a boron doped silicon germanium film |
US10818758B2 (en) | 2018-11-16 | 2020-10-27 | Asm Ip Holding B.V. | Methods for forming a metal silicate film on a substrate in a reaction chamber and related semiconductor device structures |
US10847366B2 (en) | 2018-11-16 | 2020-11-24 | Asm Ip Holding B.V. | Methods for depositing a transition metal chalcogenide film on a substrate by a cyclical deposition process |
US10559458B1 (en) | 2018-11-26 | 2020-02-11 | Asm Ip Holding B.V. | Method of forming oxynitride film |
US11217444B2 (en) | 2018-11-30 | 2022-01-04 | Asm Ip Holding B.V. | Method for forming an ultraviolet radiation responsive metal oxide-containing film |
KR102636428B1 (ko) | 2018-12-04 | 2024-02-13 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치를 세정하는 방법 |
US11158513B2 (en) | 2018-12-13 | 2021-10-26 | Asm Ip Holding B.V. | Methods for forming a rhenium-containing film on a substrate by a cyclical deposition process and related semiconductor device structures |
TW202037745A (zh) | 2018-12-14 | 2020-10-16 | 荷蘭商Asm Ip私人控股有限公司 | 形成裝置結構之方法、其所形成之結構及施行其之系統 |
WO2020131614A1 (en) * | 2018-12-19 | 2020-06-25 | Entegris, Inc. | Methods for depositing a tungsten or molybdenum layer in the presence of a reducing co-reactant |
TWI819180B (zh) | 2019-01-17 | 2023-10-21 | 荷蘭商Asm 智慧財產控股公司 | 藉由循環沈積製程於基板上形成含過渡金屬膜之方法 |
KR20200091543A (ko) | 2019-01-22 | 2020-07-31 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 |
CN113366144B (zh) | 2019-01-28 | 2023-07-07 | 朗姆研究公司 | 金属膜的沉积 |
CN111524788B (zh) | 2019-02-01 | 2023-11-24 | Asm Ip私人控股有限公司 | 氧化硅的拓扑选择性膜形成的方法 |
JP2020136677A (ja) | 2019-02-20 | 2020-08-31 | エーエスエム・アイピー・ホールディング・ベー・フェー | 基材表面内に形成された凹部を充填するための周期的堆積方法および装置 |
US11482533B2 (en) | 2019-02-20 | 2022-10-25 | Asm Ip Holding B.V. | Apparatus and methods for plug fill deposition in 3-D NAND applications |
JP2020136678A (ja) | 2019-02-20 | 2020-08-31 | エーエスエム・アイピー・ホールディング・ベー・フェー | 基材表面内に形成された凹部を充填するための方法および装置 |
KR102626263B1 (ko) | 2019-02-20 | 2024-01-16 | 에이에스엠 아이피 홀딩 비.브이. | 처리 단계를 포함하는 주기적 증착 방법 및 이를 위한 장치 |
JP2020133004A (ja) | 2019-02-22 | 2020-08-31 | エーエスエム・アイピー・ホールディング・ベー・フェー | 基材を処理するための基材処理装置および方法 |
US11742198B2 (en) | 2019-03-08 | 2023-08-29 | Asm Ip Holding B.V. | Structure including SiOCN layer and method of forming same |
KR20200108243A (ko) | 2019-03-08 | 2020-09-17 | 에이에스엠 아이피 홀딩 비.브이. | SiOC 층을 포함한 구조체 및 이의 형성 방법 |
KR20200108242A (ko) | 2019-03-08 | 2020-09-17 | 에이에스엠 아이피 홀딩 비.브이. | 실리콘 질화물 층을 선택적으로 증착하는 방법, 및 선택적으로 증착된 실리콘 질화물 층을 포함하는 구조체 |
JP2022524041A (ja) | 2019-03-11 | 2022-04-27 | ラム リサーチ コーポレーション | モリブデン含有皮膜の堆積のための前駆体 |
KR20200116033A (ko) | 2019-03-28 | 2020-10-08 | 에이에스엠 아이피 홀딩 비.브이. | 도어 개방기 및 이를 구비한 기판 처리 장치 |
KR20200116855A (ko) | 2019-04-01 | 2020-10-13 | 에이에스엠 아이피 홀딩 비.브이. | 반도체 소자를 제조하는 방법 |
US11447864B2 (en) | 2019-04-19 | 2022-09-20 | Asm Ip Holding B.V. | Layer forming method and apparatus |
KR20200125453A (ko) | 2019-04-24 | 2020-11-04 | 에이에스엠 아이피 홀딩 비.브이. | 기상 반응기 시스템 및 이를 사용하는 방법 |
KR20200130118A (ko) | 2019-05-07 | 2020-11-18 | 에이에스엠 아이피 홀딩 비.브이. | 비정질 탄소 중합체 막을 개질하는 방법 |
KR20200130121A (ko) | 2019-05-07 | 2020-11-18 | 에이에스엠 아이피 홀딩 비.브이. | 딥 튜브가 있는 화학물질 공급원 용기 |
KR20200130652A (ko) | 2019-05-10 | 2020-11-19 | 에이에스엠 아이피 홀딩 비.브이. | 표면 상에 재료를 증착하는 방법 및 본 방법에 따라 형성된 구조 |
JP2020188254A (ja) | 2019-05-16 | 2020-11-19 | エーエスエム アイピー ホールディング ビー.ブイ. | ウェハボートハンドリング装置、縦型バッチ炉および方法 |
JP2020188255A (ja) | 2019-05-16 | 2020-11-19 | エーエスエム アイピー ホールディング ビー.ブイ. | ウェハボートハンドリング装置、縦型バッチ炉および方法 |
USD975665S1 (en) | 2019-05-17 | 2023-01-17 | Asm Ip Holding B.V. | Susceptor shaft |
USD947913S1 (en) | 2019-05-17 | 2022-04-05 | Asm Ip Holding B.V. | Susceptor shaft |
USD935572S1 (en) | 2019-05-24 | 2021-11-09 | Asm Ip Holding B.V. | Gas channel plate |
USD922229S1 (en) | 2019-06-05 | 2021-06-15 | Asm Ip Holding B.V. | Device for controlling a temperature of a gas supply unit |
KR20200141003A (ko) | 2019-06-06 | 2020-12-17 | 에이에스엠 아이피 홀딩 비.브이. | 가스 감지기를 포함하는 기상 반응기 시스템 |
KR20200143254A (ko) | 2019-06-11 | 2020-12-23 | 에이에스엠 아이피 홀딩 비.브이. | 개질 가스를 사용하여 전자 구조를 형성하는 방법, 상기 방법을 수행하기 위한 시스템, 및 상기 방법을 사용하여 형성되는 구조 |
USD944946S1 (en) | 2019-06-14 | 2022-03-01 | Asm Ip Holding B.V. | Shower plate |
USD931978S1 (en) | 2019-06-27 | 2021-09-28 | Asm Ip Holding B.V. | Showerhead vacuum transport |
KR20210005515A (ko) | 2019-07-03 | 2021-01-14 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치용 온도 제어 조립체 및 이를 사용하는 방법 |
JP7499079B2 (ja) | 2019-07-09 | 2024-06-13 | エーエスエム・アイピー・ホールディング・ベー・フェー | 同軸導波管を用いたプラズマ装置、基板処理方法 |
CN112216646A (zh) | 2019-07-10 | 2021-01-12 | Asm Ip私人控股有限公司 | 基板支撑组件及包括其的基板处理装置 |
KR20210010307A (ko) | 2019-07-16 | 2021-01-27 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 |
KR20210010816A (ko) | 2019-07-17 | 2021-01-28 | 에이에스엠 아이피 홀딩 비.브이. | 라디칼 보조 점화 플라즈마 시스템 및 방법 |
KR20210010820A (ko) | 2019-07-17 | 2021-01-28 | 에이에스엠 아이피 홀딩 비.브이. | 실리콘 게르마늄 구조를 형성하는 방법 |
US11643724B2 (en) | 2019-07-18 | 2023-05-09 | Asm Ip Holding B.V. | Method of forming structures using a neutral beam |
CN112242296A (zh) | 2019-07-19 | 2021-01-19 | Asm Ip私人控股有限公司 | 形成拓扑受控的无定形碳聚合物膜的方法 |
CN112309843A (zh) | 2019-07-29 | 2021-02-02 | Asm Ip私人控股有限公司 | 实现高掺杂剂掺入的选择性沉积方法 |
CN112309900A (zh) | 2019-07-30 | 2021-02-02 | Asm Ip私人控股有限公司 | 基板处理设备 |
CN112309899A (zh) | 2019-07-30 | 2021-02-02 | Asm Ip私人控股有限公司 | 基板处理设备 |
US11227782B2 (en) | 2019-07-31 | 2022-01-18 | Asm Ip Holding B.V. | Vertical batch furnace assembly |
US11587815B2 (en) | 2019-07-31 | 2023-02-21 | Asm Ip Holding B.V. | Vertical batch furnace assembly |
US11587814B2 (en) | 2019-07-31 | 2023-02-21 | Asm Ip Holding B.V. | Vertical batch furnace assembly |
CN112323048B (zh) | 2019-08-05 | 2024-02-09 | Asm Ip私人控股有限公司 | 用于化学源容器的液位传感器 |
WO2021030327A1 (en) * | 2019-08-12 | 2021-02-18 | Applied Materials, Inc. | Molybdenum thin films by oxidation-reduction |
USD965524S1 (en) | 2019-08-19 | 2022-10-04 | Asm Ip Holding B.V. | Susceptor support |
USD965044S1 (en) | 2019-08-19 | 2022-09-27 | Asm Ip Holding B.V. | Susceptor shaft |
JP2021031769A (ja) | 2019-08-21 | 2021-03-01 | エーエスエム アイピー ホールディング ビー.ブイ. | 成膜原料混合ガス生成装置及び成膜装置 |
USD979506S1 (en) | 2019-08-22 | 2023-02-28 | Asm Ip Holding B.V. | Insulator |
USD940837S1 (en) | 2019-08-22 | 2022-01-11 | Asm Ip Holding B.V. | Electrode |
USD949319S1 (en) | 2019-08-22 | 2022-04-19 | Asm Ip Holding B.V. | Exhaust duct |
KR20210024423A (ko) | 2019-08-22 | 2021-03-05 | 에이에스엠 아이피 홀딩 비.브이. | 홀을 구비한 구조체를 형성하기 위한 방법 |
USD930782S1 (en) | 2019-08-22 | 2021-09-14 | Asm Ip Holding B.V. | Gas distributor |
US11286558B2 (en) | 2019-08-23 | 2022-03-29 | Asm Ip Holding B.V. | Methods for depositing a molybdenum nitride film on a surface of a substrate by a cyclical deposition process and related semiconductor device structures including a molybdenum nitride film |
KR20210024420A (ko) | 2019-08-23 | 2021-03-05 | 에이에스엠 아이피 홀딩 비.브이. | 비스(디에틸아미노)실란을 사용하여 peald에 의해 개선된 품질을 갖는 실리콘 산화물 막을 증착하기 위한 방법 |
KR20210029090A (ko) | 2019-09-04 | 2021-03-15 | 에이에스엠 아이피 홀딩 비.브이. | 희생 캡핑 층을 이용한 선택적 증착 방법 |
KR20210029663A (ko) | 2019-09-05 | 2021-03-16 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 |
US11562901B2 (en) | 2019-09-25 | 2023-01-24 | Asm Ip Holding B.V. | Substrate processing method |
CN112593212B (zh) | 2019-10-02 | 2023-12-22 | Asm Ip私人控股有限公司 | 通过循环等离子体增强沉积工艺形成拓扑选择性氧化硅膜的方法 |
KR20210042810A (ko) | 2019-10-08 | 2021-04-20 | 에이에스엠 아이피 홀딩 비.브이. | 활성 종을 이용하기 위한 가스 분배 어셈블리를 포함한 반응기 시스템 및 이를 사용하는 방법 |
CN112635282A (zh) | 2019-10-08 | 2021-04-09 | Asm Ip私人控股有限公司 | 具有连接板的基板处理装置、基板处理方法 |
KR20210043460A (ko) | 2019-10-10 | 2021-04-21 | 에이에스엠 아이피 홀딩 비.브이. | 포토레지스트 하부층을 형성하기 위한 방법 및 이를 포함한 구조체 |
US12009241B2 (en) | 2019-10-14 | 2024-06-11 | Asm Ip Holding B.V. | Vertical batch furnace assembly with detector to detect cassette |
TWI834919B (zh) | 2019-10-16 | 2024-03-11 | 荷蘭商Asm Ip私人控股有限公司 | 氧化矽之拓撲選擇性膜形成之方法 |
US11637014B2 (en) | 2019-10-17 | 2023-04-25 | Asm Ip Holding B.V. | Methods for selective deposition of doped semiconductor material |
KR20210047808A (ko) | 2019-10-21 | 2021-04-30 | 에이에스엠 아이피 홀딩 비.브이. | 막을 선택적으로 에칭하기 위한 장치 및 방법 |
WO2021080945A1 (en) * | 2019-10-21 | 2021-04-29 | Materion Corporation | Molybdenum oxychloride with improved bulk density |
KR20210050453A (ko) | 2019-10-25 | 2021-05-07 | 에이에스엠 아이피 홀딩 비.브이. | 기판 표면 상의 갭 피처를 충진하는 방법 및 이와 관련된 반도체 소자 구조 |
US11646205B2 (en) | 2019-10-29 | 2023-05-09 | Asm Ip Holding B.V. | Methods of selectively forming n-type doped material on a surface, systems for selectively forming n-type doped material, and structures formed using same |
KR20210054983A (ko) | 2019-11-05 | 2021-05-14 | 에이에스엠 아이피 홀딩 비.브이. | 도핑된 반도체 층을 갖는 구조체 및 이를 형성하기 위한 방법 및 시스템 |
US11501968B2 (en) | 2019-11-15 | 2022-11-15 | Asm Ip Holding B.V. | Method for providing a semiconductor device with silicon filled gaps |
KR20210062561A (ko) | 2019-11-20 | 2021-05-31 | 에이에스엠 아이피 홀딩 비.브이. | 기판의 표면 상에 탄소 함유 물질을 증착하는 방법, 상기 방법을 사용하여 형성된 구조물, 및 상기 구조물을 형성하기 위한 시스템 |
CN112951697A (zh) | 2019-11-26 | 2021-06-11 | Asm Ip私人控股有限公司 | 基板处理设备 |
KR20210065848A (ko) | 2019-11-26 | 2021-06-04 | 에이에스엠 아이피 홀딩 비.브이. | 제1 유전체 표면과 제2 금속성 표면을 포함한 기판 상에 타겟 막을 선택적으로 형성하기 위한 방법 |
CN112885693A (zh) | 2019-11-29 | 2021-06-01 | Asm Ip私人控股有限公司 | 基板处理设备 |
CN112885692A (zh) | 2019-11-29 | 2021-06-01 | Asm Ip私人控股有限公司 | 基板处理设备 |
JP2021090042A (ja) | 2019-12-02 | 2021-06-10 | エーエスエム アイピー ホールディング ビー.ブイ. | 基板処理装置、基板処理方法 |
KR20210070898A (ko) | 2019-12-04 | 2021-06-15 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 |
KR20210078405A (ko) | 2019-12-17 | 2021-06-28 | 에이에스엠 아이피 홀딩 비.브이. | 바나듐 나이트라이드 층을 형성하는 방법 및 바나듐 나이트라이드 층을 포함하는 구조 |
US11527403B2 (en) | 2019-12-19 | 2022-12-13 | Asm Ip Holding B.V. | Methods for filling a gap feature on a substrate surface and related semiconductor structures |
JP2021109175A (ja) | 2020-01-06 | 2021-08-02 | エーエスエム・アイピー・ホールディング・ベー・フェー | ガス供給アセンブリ、その構成要素、およびこれを含む反応器システム |
US11993847B2 (en) | 2020-01-08 | 2024-05-28 | Asm Ip Holding B.V. | Injector |
WO2021146623A1 (en) | 2020-01-16 | 2021-07-22 | Entegris, Inc. | Method for etching or deposition |
TW202129068A (zh) | 2020-01-20 | 2021-08-01 | 荷蘭商Asm Ip控股公司 | 形成薄膜之方法及修飾薄膜表面之方法 |
JP7117336B2 (ja) | 2020-01-30 | 2022-08-12 | 株式会社Kokusai Electric | 半導体装置の製造方法、プログラム及び基板処理装置 |
TW202130846A (zh) | 2020-02-03 | 2021-08-16 | 荷蘭商Asm Ip私人控股有限公司 | 形成包括釩或銦層的結構之方法 |
KR20210100010A (ko) | 2020-02-04 | 2021-08-13 | 에이에스엠 아이피 홀딩 비.브이. | 대형 물품의 투과율 측정을 위한 방법 및 장치 |
US11776846B2 (en) | 2020-02-07 | 2023-10-03 | Asm Ip Holding B.V. | Methods for depositing gap filling fluids and related systems and devices |
TW202146715A (zh) | 2020-02-17 | 2021-12-16 | 荷蘭商Asm Ip私人控股有限公司 | 用於生長磷摻雜矽層之方法及其系統 |
TW202203344A (zh) | 2020-02-28 | 2022-01-16 | 荷蘭商Asm Ip控股公司 | 專用於零件清潔的系統 |
US11821080B2 (en) | 2020-03-05 | 2023-11-21 | L'air Liquide Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude | Reagents to remove oxygen from metal oxyhalide precursors in thin film deposition processes |
KR20210116249A (ko) | 2020-03-11 | 2021-09-27 | 에이에스엠 아이피 홀딩 비.브이. | 록아웃 태그아웃 어셈블리 및 시스템 그리고 이의 사용 방법 |
KR20210116240A (ko) | 2020-03-11 | 2021-09-27 | 에이에스엠 아이피 홀딩 비.브이. | 조절성 접합부를 갖는 기판 핸들링 장치 |
CN113394086A (zh) | 2020-03-12 | 2021-09-14 | Asm Ip私人控股有限公司 | 用于制造具有目标拓扑轮廓的层结构的方法 |
KR20210119809A (ko) | 2020-03-25 | 2021-10-06 | 삼성전자주식회사 | 몰리브덴 화합물과 이를 이용한 집적회로 소자의 제조 방법 |
JP2021167466A (ja) * | 2020-03-30 | 2021-10-21 | アプライド マテリアルズ インコーポレイテッドApplied Materials, Incorporated | バリア層のないインシトゥタングステン堆積 |
KR20210124042A (ko) | 2020-04-02 | 2021-10-14 | 에이에스엠 아이피 홀딩 비.브이. | 박막 형성 방법 |
TW202146689A (zh) | 2020-04-03 | 2021-12-16 | 荷蘭商Asm Ip控股公司 | 阻障層形成方法及半導體裝置的製造方法 |
TW202145344A (zh) | 2020-04-08 | 2021-12-01 | 荷蘭商Asm Ip私人控股有限公司 | 用於選擇性蝕刻氧化矽膜之設備及方法 |
US11821078B2 (en) | 2020-04-15 | 2023-11-21 | Asm Ip Holding B.V. | Method for forming precoat film and method for forming silicon-containing film |
US11996289B2 (en) | 2020-04-16 | 2024-05-28 | Asm Ip Holding B.V. | Methods of forming structures including silicon germanium and silicon layers, devices formed using the methods, and systems for performing the methods |
KR20210132576A (ko) | 2020-04-24 | 2021-11-04 | 에이에스엠 아이피 홀딩 비.브이. | 바나듐 나이트라이드 함유 층을 형성하는 방법 및 이를 포함하는 구조 |
TW202146831A (zh) | 2020-04-24 | 2021-12-16 | 荷蘭商Asm Ip私人控股有限公司 | 垂直批式熔爐總成、及用於冷卻垂直批式熔爐之方法 |
KR20210132600A (ko) | 2020-04-24 | 2021-11-04 | 에이에스엠 아이피 홀딩 비.브이. | 바나듐, 질소 및 추가 원소를 포함한 층을 증착하기 위한 방법 및 시스템 |
KR20210134226A (ko) | 2020-04-29 | 2021-11-09 | 에이에스엠 아이피 홀딩 비.브이. | 고체 소스 전구체 용기 |
KR20210134869A (ko) | 2020-05-01 | 2021-11-11 | 에이에스엠 아이피 홀딩 비.브이. | Foup 핸들러를 이용한 foup의 빠른 교환 |
KR20210141379A (ko) | 2020-05-13 | 2021-11-23 | 에이에스엠 아이피 홀딩 비.브이. | 반응기 시스템용 레이저 정렬 고정구 |
CN111514881A (zh) * | 2020-05-15 | 2020-08-11 | 山西大学 | 一种硼氧化钼纳米多孔薄膜电催化剂及其制备方法和应用 |
TW202147383A (zh) | 2020-05-19 | 2021-12-16 | 荷蘭商Asm Ip私人控股有限公司 | 基材處理設備 |
KR20210145078A (ko) | 2020-05-21 | 2021-12-01 | 에이에스엠 아이피 홀딩 비.브이. | 다수의 탄소 층을 포함한 구조체 및 이를 형성하고 사용하는 방법 |
TW202200837A (zh) | 2020-05-22 | 2022-01-01 | 荷蘭商Asm Ip私人控股有限公司 | 用於在基材上形成薄膜之反應系統 |
US20230203645A1 (en) * | 2020-05-26 | 2023-06-29 | Merck Patent Gmbh | Methods Of Forming Molybdenum-Containing Films Deposited On Elemental Metal Films |
TW202201602A (zh) | 2020-05-29 | 2022-01-01 | 荷蘭商Asm Ip私人控股有限公司 | 基板處理方法 |
TW202218133A (zh) | 2020-06-24 | 2022-05-01 | 荷蘭商Asm Ip私人控股有限公司 | 形成含矽層之方法 |
TW202217953A (zh) | 2020-06-30 | 2022-05-01 | 荷蘭商Asm Ip私人控股有限公司 | 基板處理方法 |
TW202219628A (zh) | 2020-07-17 | 2022-05-16 | 荷蘭商Asm Ip私人控股有限公司 | 用於光微影之結構與方法 |
TW202204662A (zh) | 2020-07-20 | 2022-02-01 | 荷蘭商Asm Ip私人控股有限公司 | 用於沉積鉬層之方法及系統 |
KR20220027026A (ko) | 2020-08-26 | 2022-03-07 | 에이에스엠 아이피 홀딩 비.브이. | 금속 실리콘 산화물 및 금속 실리콘 산질화물 층을 형성하기 위한 방법 및 시스템 |
USD990534S1 (en) | 2020-09-11 | 2023-06-27 | Asm Ip Holding B.V. | Weighted lift pin |
USD1012873S1 (en) | 2020-09-24 | 2024-01-30 | Asm Ip Holding B.V. | Electrode for semiconductor processing apparatus |
US12009224B2 (en) | 2020-09-29 | 2024-06-11 | Asm Ip Holding B.V. | Apparatus and method for etching metal nitrides |
TW202229613A (zh) | 2020-10-14 | 2022-08-01 | 荷蘭商Asm Ip私人控股有限公司 | 於階梯式結構上沉積材料的方法 |
TW202217037A (zh) | 2020-10-22 | 2022-05-01 | 荷蘭商Asm Ip私人控股有限公司 | 沉積釩金屬的方法、結構、裝置及沉積總成 |
TW202223136A (zh) | 2020-10-28 | 2022-06-16 | 荷蘭商Asm Ip私人控股有限公司 | 用於在基板上形成層之方法、及半導體處理系統 |
TW202235675A (zh) | 2020-11-30 | 2022-09-16 | 荷蘭商Asm Ip私人控股有限公司 | 注入器、及基板處理設備 |
US11946137B2 (en) | 2020-12-16 | 2024-04-02 | Asm Ip Holding B.V. | Runout and wobble measurement fixtures |
TW202231903A (zh) | 2020-12-22 | 2022-08-16 | 荷蘭商Asm Ip私人控股有限公司 | 過渡金屬沉積方法、過渡金屬層、用於沉積過渡金屬於基板上的沉積總成 |
US11869806B2 (en) * | 2021-05-07 | 2024-01-09 | Applied Materials, Inc. | Methods of forming molybdenum contacts |
USD980814S1 (en) | 2021-05-11 | 2023-03-14 | Asm Ip Holding B.V. | Gas distributor for substrate processing apparatus |
USD981973S1 (en) | 2021-05-11 | 2023-03-28 | Asm Ip Holding B.V. | Reactor wall for substrate processing apparatus |
USD1023959S1 (en) | 2021-05-11 | 2024-04-23 | Asm Ip Holding B.V. | Electrode for substrate processing apparatus |
USD980813S1 (en) | 2021-05-11 | 2023-03-14 | Asm Ip Holding B.V. | Gas flow control plate for substrate processing apparatus |
US20220403505A1 (en) * | 2021-06-16 | 2022-12-22 | Applied Materials, Inc. | Methods and apparatus for processing a substrate |
USD990441S1 (en) | 2021-09-07 | 2023-06-27 | Asm Ip Holding B.V. | Gas flow control plate |
WO2023215135A1 (en) * | 2022-05-05 | 2023-11-09 | Lam Research Corporation | Molybdenum halides in memory applications |
Family Cites Families (32)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB806696A (en) | 1954-12-08 | 1958-12-31 | John Simon Nachtman | Method of producing refractory fibre laminate |
GB877408A (en) | 1956-08-23 | 1961-09-13 | British Aluminium Co Ltd | Improvements in or relating to dies |
US3437515A (en) | 1965-01-11 | 1969-04-08 | Mearl Corp | Method of coating surfaces with high index oxides |
US3614829A (en) | 1969-12-08 | 1971-10-26 | Gen Electric | Method of forming high stability self-registered field effect transistors |
US3996489A (en) | 1972-09-29 | 1976-12-07 | Owens-Illinois, Inc. | Gas discharge device including transition metal element on internal dielectric layer |
US4668528A (en) * | 1986-04-09 | 1987-05-26 | Massachusetts Institute Of Technology | Method and apparatus for photodeposition of films on surfaces |
US4748045A (en) * | 1986-04-09 | 1988-05-31 | Massachusetts Institute Of Technology | Method and apparatus for photodeposition of films on surfaces |
EP0878711A1 (en) | 1997-05-15 | 1998-11-18 | Interuniversitair Micro-Elektronica Centrum Vzw | Chemically sensitive sensor comprising arylene alkenylene oligomers |
DE19825572A1 (de) * | 1998-06-08 | 1999-12-09 | Widia Gmbh | Werkzeug aus einem Grundkörper und mindestens einer hierauf abgeschiedenen Schicht sowie Verfahren zur Herstellung einer Molybdänsulfidschicht auf einem Substratkörper |
GB9822338D0 (en) * | 1998-10-13 | 1998-12-09 | Glaverbel | Solar control coated glass |
FR2834387B1 (fr) * | 2001-12-31 | 2004-02-27 | Memscap | Composant electronique incorporant un circuit integre et un micro-condensateur |
US6713199B2 (en) * | 2001-12-31 | 2004-03-30 | Memscap | Multilayer structure used especially as a material of high relative permittivity |
JP2005144432A (ja) | 2003-11-18 | 2005-06-09 | Rohm & Haas Co | アルカンをアルケン、およびそれらの対応する酸素化生成物に転化するための触媒系 |
BRPI0500615B1 (pt) | 2004-03-10 | 2015-07-14 | Rohm & Haas | Catalisador modificado, e, sistema de catalisador modificado |
ITMI20040554A1 (it) | 2004-03-23 | 2004-06-23 | Polimeri Europa Spa | Procedimento per la idrodealchilazione catalitica selettiva di idrocarburi alchilaromatici |
EP1598110A1 (en) | 2004-04-22 | 2005-11-23 | Rohm and Haas Company | Structured oxidation catalysts |
TWI314876B (en) | 2004-11-18 | 2009-09-21 | Rohm And Haas Compan | Multi-staged catalyst systems and process for converting alkanes to alkenes and to their corresponding oxygenated products |
TWI332418B (en) | 2004-11-18 | 2010-11-01 | Rohm & Haas | Hybrid catalyst systems and hybrid process for converting alkanes to alkenes and to their corresponding oxygenated products |
US7361622B2 (en) | 2005-11-08 | 2008-04-22 | Rohm And Haas Company | Multi-staged catalyst systems and process for converting alkanes to alkenes and to their corresponding oxygenated products |
US20060122055A1 (en) | 2004-12-06 | 2006-06-08 | Gaffney Anne M | (Amm)oxidation catalyst and catalytic (amm)oxidation process for conversion of lower alkanes |
EP1874686B8 (en) | 2005-04-07 | 2018-04-25 | Yeda Research And Development Co., Ltd. | Process and apparatus for producing inorganic fullerene-like nanoparticles |
US20070106088A1 (en) | 2005-11-08 | 2007-05-10 | Abraham Benderly | Hybrid catalyst systems and hybrid process for converting alkanes to alkenes and to their corresponding oxygenated products |
ITMI20061548A1 (it) | 2006-08-03 | 2008-02-04 | Polimeri Europa Spa | Composizioni catalitiche per idrodealchilazioni altamente selettive di idrocarburi alchilaromatici |
US7795469B2 (en) | 2006-12-21 | 2010-09-14 | Rohm And Haas Company | Process for the selective (AMM) oxidation of lower molecular weight alkanes and alkenes |
TWI493058B (zh) * | 2007-05-15 | 2015-07-21 | Applied Materials Inc | 鎢材料的原子層沈積法 |
WO2009042713A1 (en) | 2007-09-28 | 2009-04-02 | Applied Materials, Inc. | Vapor deposition of tungsten materials |
JP5730670B2 (ja) * | 2011-05-27 | 2015-06-10 | 株式会社Adeka | 酸化モリブデンを含有する薄膜の製造方法、及び酸化モリブデンを含有する薄膜の形成用原料 |
US9283551B2 (en) | 2013-01-23 | 2016-03-15 | Mississippi State University Research And Technology Corporation | Catalysts for converting syngas into liquid hydrocarbons and methods thereof |
US10109534B2 (en) * | 2014-03-14 | 2018-10-23 | Applied Materials, Inc. | Multi-threshold voltage (Vt) workfunction metal by selective atomic layer deposition (ALD) |
US9595470B2 (en) * | 2014-05-09 | 2017-03-14 | Lam Research Corporation | Methods of preparing tungsten and tungsten nitride thin films using tungsten chloride precursor |
TWI732846B (zh) * | 2016-04-25 | 2021-07-11 | 美商應用材料股份有限公司 | 透過控制前驅物混合來強化金屬的空間ald |
US10453744B2 (en) * | 2016-11-23 | 2019-10-22 | Entegris, Inc. | Low temperature molybdenum film deposition utilizing boron nucleation layers |
-
2017
- 2017-07-13 JP JP2019501911A patent/JP6793243B2/ja active Active
- 2017-07-13 US US15/649,248 patent/US20180019165A1/en not_active Abandoned
- 2017-07-13 CN CN201780054079.8A patent/CN109661481B/zh active Active
- 2017-07-13 WO PCT/US2017/041883 patent/WO2018013778A1/en active Application Filing
- 2017-07-13 KR KR1020197003968A patent/KR102266610B1/ko active IP Right Grant
- 2017-07-14 TW TW106123706A patent/TWI648421B/zh active
-
2018
- 2018-04-26 US US15/963,656 patent/US11107675B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
CN109661481A (zh) | 2019-04-19 |
US20180019165A1 (en) | 2018-01-18 |
TW201812070A (zh) | 2018-04-01 |
US11107675B2 (en) | 2021-08-31 |
KR20190028743A (ko) | 2019-03-19 |
WO2018013778A8 (en) | 2018-08-30 |
US20180286668A1 (en) | 2018-10-04 |
CN109661481B (zh) | 2021-11-30 |
JP2019527302A (ja) | 2019-09-26 |
WO2018013778A1 (en) | 2018-01-18 |
TWI648421B (zh) | 2019-01-21 |
KR102266610B1 (ko) | 2021-06-21 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP6793243B2 (ja) | MoOCl4を使用することによるCVD Mo堆積 | |
TWI731074B (zh) | 相對於基板的第二表面選擇性沈積在基板的第一表面上的製程與方法 | |
JP7449928B2 (ja) | 基板上にモリブデン膜を形成するための方法 | |
TWI780050B (zh) | 鎢之選擇性沉積 | |
TWI721896B (zh) | 選擇性地沈積金屬氧化物膜的方法 | |
JP6116849B2 (ja) | 金属/金属窒化物基板上に貴金属を選択的に堆積させるための方法 | |
TWI647333B (zh) | 利用硼成核層之低溫鉬膜沉積 | |
TWI638060B (zh) | 原子層沉積製程及形成金屬氮化物膜的方法 | |
TWI798582B (zh) | 第六族金屬沈積方法 | |
WO2011156705A2 (en) | Selective formation of metallic films on metallic surfaces | |
JP6989623B2 (ja) | 金属シリサイドの選択的堆積 | |
TWI555870B (zh) | 利用化學氣相沉積法在矽基板上製備鎳薄膜以及在矽基板上製備矽化鎳薄膜的方法 | |
JP7425744B2 (ja) | ホウ素核形成層を利用した低温モリブデン膜堆積 | |
JP6797068B2 (ja) | 原子層堆積法による炭化チタン含有薄膜の製造方法 | |
Baum et al. | CVD Mo deposition by using MoOCl 4 | |
Stevens | From Novel Processes to Industry-Relevant Applications: Atomic Layer Deposition of Metal, Metal Oxide, and Metal Carbide Thin-Films. | |
JP2023532983A (ja) | Vi族前駆体化合物 | |
CN108475638A (zh) | Cu膜的形成方法 | |
Park | ALD2023 Session AF-MoP: ALD Fundamentals Poster Session |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20190408 |
|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20190408 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20200318 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20200331 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20200629 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20201020 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20201109 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 6793243 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |