CN109661481A - 使用MoOC14的CVD Mo沉积 - Google Patents

使用MoOC14的CVD Mo沉积 Download PDF

Info

Publication number
CN109661481A
CN109661481A CN201780054079.8A CN201780054079A CN109661481A CN 109661481 A CN109661481 A CN 109661481A CN 201780054079 A CN201780054079 A CN 201780054079A CN 109661481 A CN109661481 A CN 109661481A
Authority
CN
China
Prior art keywords
molybdenum
substrate
moocl
diborane
deposition
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CN201780054079.8A
Other languages
English (en)
Other versions
CN109661481B (zh
Inventor
T·H·鲍姆
P·S·H·陈
R·赖特
B·亨德里克斯
孟双
R·阿西翁
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Entegris Inc
Original Assignee
Entegris Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Entegris Inc filed Critical Entegris Inc
Publication of CN109661481A publication Critical patent/CN109661481A/zh
Application granted granted Critical
Publication of CN109661481B publication Critical patent/CN109661481B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76841—Barrier, adhesion or liner layers
    • H01L21/76871—Layers specifically deposited to enhance or enable the nucleation of further layers, i.e. seed layers
    • H01L21/76876—Layers specifically deposited to enhance or enable the nucleation of further layers, i.e. seed layers for deposition from the gas phase, e.g. CVD
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/02—Pretreatment of the material to be coated
    • C23C16/0272—Deposition of sub-layers, e.g. to promote the adhesion of the main coating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/04—Coating on selected surface areas, e.g. using masks
    • C23C16/045—Coating cavities or hollow spaces, e.g. interior of tubes; Infiltration of porous substrates
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
    • C23C16/08—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metal halides
    • C23C16/14—Deposition of only one other metal element
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45553—Atomic layer deposition [ALD] characterized by the use of precursors specially adapted for ALD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
    • H01L21/02175—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H01L21/0228—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition deposition by cyclic CVD, e.g. ALD, ALE, pulsed CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
    • H01L21/28556—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table by chemical means, e.g. CVD, LPCVD, PECVD, laser CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
    • H01L21/28568—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table the conductive layers comprising transition metals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/32051—Deposition of metallic or metal-silicide layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76841—Barrier, adhesion or liner layers
    • H01L21/76843—Barrier, adhesion or liner layers formed in openings in a dielectric
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76841—Barrier, adhesion or liner layers
    • H01L21/7685—Barrier, adhesion or liner layers the layer covering a conductive structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/30—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region
    • H10B41/35—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region with a cell select transistor, e.g. NAND
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/10—Applying interconnections to be used for carrying current between separate components within a device
    • H01L2221/1068—Formation and after-treatment of conductors
    • H01L2221/1073—Barrier, adhesion or liner layers
    • H01L2221/1084—Layers specifically deposited to enhance or enable the nucleation of further layers, i.e. seed layers
    • H01L2221/1089—Stacks of seed layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
    • H01L23/53204—Conductive materials
    • H01L23/53209—Conductive materials based on metals, e.g. alloys, metal silicides
    • H01L23/53257—Conductive materials based on metals, e.g. alloys, metal silicides the principal metal being a refractory metal

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Catalysts (AREA)

Abstract

本发明描述一种在衬底上形成含钼材料的方法，其中在气相沉积条件下将所述衬底与四氯氧化钼(MoOCl4)蒸气接触以在所述衬底上沉积所述含钼材料。在各种实施方案中，可采用所述衬底的二硼烷接触以建立用于(例如)通过例如脉冲化学气相沉积CVD的CVD技术的钼的后续块状沉积的有利成核条件。

Description

使用MoOCl4的CVD Mo沉积
技术领域
本发明涉及含钼材料的气相沉积。特定来说(但非排他性地)，本发明涉及使用四氯氧化钼(MoOCl4)作为用于此沉积的前驱体。
背景技术
由于其极高熔点、低热膨胀系数、低电阻率及高导热性的特性，钼越来越多地用于制造半导体装置，包含用于扩散屏障、电极、光掩模、电力电子衬底、低电阻率栅极及互连件中。
此利用已激发用以实现用于特性在于经沉积膜的高保形性及高沉积速率的此类应用的钼膜的沉积以适应有效高体积制造操作的努力。此又已通知用以开发可用于气相沉积操作中的经改进钼源试剂以及利用此类试剂的经改进工艺流程的努力。
五氯化钼最常用作用于含钼材料的化学气相沉积的钼源。然而，仍需要实现具有更高沉积速率的含钼材料的沉积来适应高效高体积制造操作。
发明内容
本发明涉及含钼材料的气相沉积，且更具体来说，涉及使用四氯氧化钼(MoOCl4)作为用于此气相沉积的源试剂，以及采用四氯氧化钼(MoOCl4)作为源试剂的过程及装置。
在一个方面中，本发明涉及一种在衬底上形成含钼材料的方法，其包括在气相沉积条件下将所述衬底与四氯氧化钼(MoOCl4)蒸气接触以在所述衬底上沉积所述含钼材料。
在各种实施利中，本发明涉及一种在衬底上形成含钼材料的方法，其包括：在接触条件下将所述衬底与二硼烷接触，从而在所述衬底上建立成核表面；及通过利用四氯氧化钼(MoOCl4)前驱体的气相沉积工艺而在所述成核表面上沉积钼以在所述衬底上产生所述含钼材料。
从后续描述及所附权利要求书将更完全明白本发明的其它方面、特征及实施例。
附图说明
图1是四氯氧化钼的热重量分析(TGA)的图表。
图2是包括根据本发明的实施例沉积的含钼材料的半导体装置结构的示意性横截面正视图。
图3展示说明来自实例1的结果的四氯氧化钼(MoOCl4)/氢(H2)沉积曲线。
图4是针对根据实例1的通过MoOCl4/H2过程的钼的沉积的依据厚度而变化的电阻率的图表。
图5及图6是根据实例2形成的经沉积钼膜的扫描电子显微照片(SEM)图像。
图7是针对根据实例3的通过MoOCl4/H2过程的钼的沉积的依据沉积时间而变化的钼厚度的图表。
图8是针对根据实例4的通过MoOCl4/H2过程进行的钼沉积的依据钼厚度而变化的膜电阻率的图表。
图9是针对根据实例5的钼沉积的比较依据运行数目而变化的沉积速率的图表。
图10是根据实例6比较依据钼膜厚度而变化的经沉积钼膜的膜电阻率的图表。
图11是说明来自实例7的结果的依据二硼烷浸泡时间而变化的钼膜厚度的图表。
图12及13是实例8中形成的膜沉积的SEM显微照片。
图14及15是在实例9中形成的通孔中的经沉积膜的SEM图像。
图16是针对根据实例10的沉积工艺的依据二硼烷浸泡时间而变化的钼厚度及电阻率的图表。
图17是针对根据实例11的沉积工艺的依据MoOCl4/H2曝露时间而变化的钼厚度及电阻率的图表。
图18是根据实例12沉积的钼膜的SEM图像。
图19是根据实例12沉积的钼膜的SEM横截面图像。
图20是根据实例13的依据阶段温度而变化的钼厚度及电阻率的图表，其展示针对不使用二硼烷成核的MoOCl4/H2过程的反应速率限制体系。
图21是根据实例13的依据阶段温度而变化的钼厚度及电阻率的图表，其展示针对使用二硼烷成核的MoOCl4/H2过程的反应速率限制体系。
图22是针对如不使用成核(Δ)进行及如使用成核(○)进行的MoOCl4/H2反应的活化能的阿瑞尼氏(Arrhenius)图(K＝A e-Ea/RT)。
图23及24展示通过如在实例15中进行的成核及CVD块状钼沉积MoOCl4/H2过程的通孔结构上的阶梯覆盖率。
图25、26及27展示根据实例16的使用钼沉积的相应通孔结构。
图28、29及30展示根据实例17的使用钼沉积的相应通孔结构。
图31、32及33展示根据实例18的使用钼沉积的相应通孔结构。
图34、35及36是根据实例19的使用钼沉积的通孔结构的SEM图像。
图37及38是根据实例20的使用钼沉积的通孔结构的SEM图像。
图39及40是根据实例21的使用钼沉积的通孔结构的SEM图像。
具体实施方式
本发明涉及钼的气相沉积，且涉及(例如)在其中期望具有优越保形性及性能性质的钼膜的半导体装置的制造中使用四氯氧化钼(MoOCl4)用于此沉积。
根据本发明，已发现四氯氧化钼(MoOCl4)在例如化学气相沉积的气相沉积工艺中提供具有高保形特性的低电阻率、高沉积速率膜。
一方面，本发明涉及在衬底上形成含钼材料的方法，其包括在气相沉积条件下将衬底与四氯氧化钼(MoOCl4)蒸气接触以在衬底上沉积含钼材料。
已发现，在本发明的各种实施例中，使用四氯氧化钼(MoOCl4)作为用于含钼材料在衬底上的气相沉积的前驱体可提供如由横截面扫描电子显微成像技术确定的惊人的高程度的保形性，接近100％的保形性。有利地，(MoOCl4)、四氯氧化钼(MoOCl4)的沉积可按高于五氯化钼(MoCl5)的沉积的速率进行。此外，惊人地，尽管在四氯氧化钼(MoOCl4)的结构中存在氧，但含钼材料可具有低电阻率及氧含量。
在各种实施例中，方法包括在衬底上建立成核表面且衬底与四氯氧化钼(MoOCl4)蒸气的所述接触包括将衬底的成核表面与四氯氧化钼(MoOCl4)蒸气接触以在衬底上沉积含钼材料。
成核表面可有利地促成低电阻率含钼材料在较低温度下在衬底上的沉积。
在衬底上建立成核表面可适合地包括将衬底与二硼烷蒸气且任选地分开地与四氯氧化钼(MoOCl4)蒸气接触。有利地，建立成核表面可包括将衬底与二硼烷蒸气且分开地与四氯氧化钼(MoOCl4)蒸气接触的多个循环。在各种实施例中，氮化钛层与二硼烷蒸气的接触在从300℃到450℃的范围中的温度下进行。
有利地，可脉冲化气相沉积条件。已发现，此可改进沉积的阶梯覆盖率。适合地，经脉冲沉积的“脉冲”及“清除”时间可各自独立地在从1秒到20秒的范围中。
在各种实施例中，蒸气条件经选择使得经沉积含钼材料具有最多20μΩ·cm，任选地最多15μΩ·cm的电阻率。
适合地，可在从400℃到750℃的范围中、或在从400℃到600℃的范围中或在从400℃到575℃的围中的阶段)温度下沉积含钼材料。适合地，可在从450℃到750℃的范围中、或在从450℃到600℃的范围中或在从450℃到575℃的范围中的(阶段)温度下沉积含钼材料。适合地，可在从500℃到750℃的范围中、或在从500℃到600℃的范围中或在从500℃到575℃的范围中的(阶段)温度下沉积含钼材料。
在各种实施例中，气相沉积条件包括惰性氛围，除了存在任选还原剂(例如氢)的情况之外。适合地，可在实质上它金属蒸气的情况下沉积四氯氧化钼(MoOCl4)蒸气。
方法可包括使四氯氧化钼(MoOCl4)挥发以形成用于气相沉积操作的四氯氧化钼(MoOCl4)蒸气。气相沉积条件可具有任何适合类型，且可(例如)包括还原环境，使得含钼材料包括元素钼材料。含钼材料可包括元素钼或氧化钼或其它含钼材料，或替代地由或基本上由元素钼或氧化钼或其它含钼材料组成。
本发明的方法中利用的衬底可具有任何适合类型，且可(例如)包括半导体装置衬底，例如，硅衬底、二氧化硅衬底或其它硅基衬底。在各种实施例中，衬底可包括TiN、Mo、MoC、B、SiO2、W及WCN中的一或多者。
有利地，(例如)在例如二氧化硅的氧化物衬底或替代地硅或多晶硅衬底的情况中，衬底可经处理或制造以在其上包含用于随后经沉积材料的屏障层(例如，氮化钛)。举例来说，衬底可包括氮化钛层上的成核层，其中含钼材料在附属工艺流程序列中沉积于成核层上。
此成核层或表面可(例如)通过脉冲化CVD或ALD或其它气相沉积技术形成，且此成核层的形成可通过将氮化钛层与二硼烷蒸气且分开地与四氯氧化钼(MoOCl4)蒸气接触而实行。可交替地且重复地实行相应硼烷蒸气及四氯氧化钼(MoOCl4)蒸气接触步骤达如用以形成具有所要厚度的成核层所期望的数目个循环。用于此成核层形成的工艺条件可包括任何适合所要温度、压力、流率及其它工艺条件。在各种实施例中，在从300℃到450℃的范围中的温度下进行氮化钛层与二硼烷蒸气的接触。在各种实施例中，在从400℃到575℃的范围或如上文针对(MoOCl4)气相沉积定义的另一范围中的温度下进行氮化钛层与四氯氧化钼(MoOCl4)蒸气的接触。
在通过将衬底与二硼烷蒸气且分开地与四氯氧化钼(MoOCl4)蒸气接触而形成成核层之后，可将含钼材料沉积于成核层上以形成元素钼或氧化钼或其它含钼化合物或组合物的块状沉积。
在各种实施例中，在从400℃到575℃的范围或如上文针对(MoOCl4)气相沉积定义的另一范围中的温度下将含钼材料沉积于成核层或表面上。工艺可经实行以使得气相沉积条件产生元素钼的沉积作为在衬底的成核层上的含钼材料。气相沉积条件可具有任何适合特性，且可(例如)包括存在氢或其它还原气体，以在成核层上形成元素钼的块状层。
更一般来说，根据本发明的在衬底上形成含钼材料的广泛方法可包括包含氢或其它还原气体的存在的气相沉积条件。可在存在或缺乏氢的情况下将含钼材料沉积于屏障层或成核层或表面上。举例来说，屏障层可由氮化钛构成，且氮化钛层可在存在氢的情况下与四氯氧化钼(MoOCl4)蒸气接触。
应了解，可以许多替代方式且在多种工艺条件下实行本发明的方法。可(例如)在用于在衬底上制造半导体装置的工艺中实行本发明的方法。半导体装置可具有任何适合类型，且可(例如)包括DRAM装置、3-D NAND装置或其它装置或装置前驱体结构。在各种实施例中，衬底可包括其中沉积含钼材料的通孔。通孔可(例如)具有在从20:1到30:1的范围中的深度对横向尺寸的纵横比。
根据本发明的用于沉积含钼材料的工艺化学过程可包含元素钼Mo(0)通过反应MoOCl4+3H2→Mo+4HCl+H2O的沉积。如上文描述那样通过将衬底与二硼烷及MoOCl4连续接触以形成成核层而形成的成核层或表面可涉及2MoOCl4+B2H6→2Mo+2BOCl+6HCl的形成反应。
根据本发明的方法沉积的含钼材料可以任何适当评估度量及参数表征，例如含钼材料的沉积速率、经沉积含钼材料的膜电阻率、经沉积含钼材料的膜形态、经沉积含钼材料的膜应力、材料的阶梯覆盖率及适当工艺条件的工艺窗或工艺包络。可采用任何适当评估度量及参数来表征经沉积材料且将经沉积材料与特定工艺条件相关以实现对应半导体产品的大量生产。
在各种实施例中，本发明涉及一种在衬底上形成含钼材料的方法，其包括：在接触条件下将衬底与二硼烷接触，从而在衬底上建立成核表面；及通过利用四氯氧化钼(MoOCl4)前驱体的气相沉积工艺而将钼沉积于成核表面上以在衬底上产生含钼材料。
可如本文中不同地描述那样以任何适合方式实行此方法。在特定实施例中，可使用包括化学气相沉积(例如，经脉冲化化学气相沉积)的气相沉积工艺进行此方法。可实行所述方法使得所得含钼材料基本上由元素钼构成，且在各种实施例中，可在存在氢或其它适合还原气体的情况下将钼沉积于成核表面上。可在制造半导体产品(例如DRAM装置或3-DNAND装置)时实行所述方法。
一般来说，可实行用于在衬底上形成含钼材料的本发明的方法以实现按高水平的阶梯覆盖率(例如，从90％到110％的阶梯覆盖率)沉积含钼材料。
从下文陈述的说明性实施例及说明性实例的后续描述将更完全明白本发明的方法的特征及优点。
首先参考图1，其中展示绘制为依据温度(以摄氏度为单位)而变化的重量百分比的四氯氧化钼的热重量分析(TGA)的图表，其展示四氯氧化钼的热行为的特性。显著地，四氯氧化钼(MoOCl4)的T50比五氯化钼(MoCl5)的T50低大约20℃。
参考图2，包括根据本发明的实施例沉积的含钼材料的半导体装置结构包含二氧化硅(SiO2)的基底层，氮化钛(TiN)的屏障层上覆于所述基底层，通过将衬底与四氯氧化钼(MoOCl4)及二硼烷接触而在所述屏障层上方形成成核层，其中在存在氢(H2)的情况下在来自四氯氧化钼(MoOCl4)的成核层上作为上层沉积元素钼(Mo)层。
可通过以下过程步骤序列在包括二氧化硅基底层上的氮化钛屏障层的衬底上制造图2的半导体装置。
步骤1：(例如)在从300℃到450℃的范围中的温度下，将衬底的屏障层(TiN层)与二硼烷(B2H6)脉冲接触；
步骤2：泵抽/清除沉积腔室；
步骤3：(例如)在大约500℃的温度下，在存在氢(H2)或氩(Ar)的情况下，将衬底的屏障层(TiN层)与五氯化钼(MoCl5)或四氯氧化钼(MoOCl4)蒸气脉冲接触；
步骤4：泵抽/清除沉积腔室；
步骤5：重复步骤1到4(任选)以形成具有所要特性的成核层；及
步骤6：通过(例如)在大约500℃的温度下，在存在氢(H2)的情况下，将衬底与四氯氧化钼(MoOCl4)蒸气接触而在成核层上沉积块状钼。
步骤1到5是任选的且如果不需要成核层，就可省去。
实例1-沉积速率研究
利用以下工艺条件实行使用四氯氧化钼(MoOCl4)/氢(H2)的化学气相沉积(CVD)钼沉积：其中维持衬底的700℃阶段；从其施配四氯氧化钼(MoOCl4)前驱体用于气相沉积操作的70℃安瓿；气相沉积操作中的60托压力；每分钟50标准立方厘米(sccm)氩载气流；及每分钟2000标准立方英尺(sccm)的氢(H2)。
在图3及图4中展示沉积的结果。数据展示在700℃下的化学气相沉积(CVD)四氯氧化钼(MoOCl4)/氢(H2)沉积工艺在安瓿设置为70℃的温度的情况下展现大约 的高沉积速率。
实例2-SEM研究
图5及图6是通过涉及以下工艺条件的CVD四氯氧化钼(MoOCl4)/氢(H2)沉积工艺形成的经沉积钼膜的扫描电子显微照片(SEM)图像：安瓿温度＝70℃；阶段温度＝700℃；压力＝60托；氩载气流率＝50sccm；氩清除气体流率＝0sccm；氢气流率＝2000sccm；沉积时间＝300秒；在沉积之前的在沉积之后的及经沉积钼的电阻率＝15.1μΩ·cm。图5及图6展示具有相对大晶粒大小的均匀沉积的钼膜。
实例3-温度及厚度研究
图7是依据沉积时间(以秒为单位)而变化的钼厚度(以埃为单位)的图表，其是针对如在550℃(底部曲线)、600℃(在600℃处的从底部的第二曲线)、650℃(在600℃处的从底部的第三曲线)及700℃(在600℃处的顶部曲线)的温度下的相应运行中实行的通过MoOCl4/H2过程、70℃的安瓿温度、60托的压力、50sccm的氩载气流率及2000sccm的氢气流率的钼的沉积。不使用成核层的通过MoOCl4/H2过程的钼的化学气相沉积展示550℃处的温度截止。从600℃到700℃(阶段温度)的沉积速率类似。
实例4-温度及电阻率研究
图8是依据钼厚度(以埃为单位)而变化的膜电阻率(以μΩ·cm为单位)的图表，其是针对通过MoOCl4/H2过程在70℃安瓿温度、60托压力、50sccm氩载气流率及2000sccm氢气流率的条件下进行的钼沉积，其中在600℃(顶部曲线)、650℃(中间曲线)及700℃(底部曲线)的温度下在单独运行中进行过程。数据展示相较于700℃的过程，在600℃及650℃下进行的过程展示稍微更高的电阻率。在700℃的阶段温度下，针对大约的钼膜厚度，膜电阻率下降到大约11μΩ·cm。
实例5-与MoCl5的比较-长期沉积研究
图9是依据运行数目而变化的沉积速率(以埃/分钟为单位)的图表，其是针对使用四氯氧化钼(MoOCl4)作为钼前驱体(○)的钼沉积及针对使用升华五氯化钼(MoCl5)作为钼前驱体(Δ)的钼沉积。两个情况中的工艺条件如下：安瓿温度＝70℃；压力＝60托；氩载气流率＝50sccm；氢气流率＝2000sccm。
图9中的结果展示使用四氯氧化钼(MoOCl4)作为钼前驱体的钼沉积展现稳定及高沉积速率，而升华五氯化钼(MoCl5)展示稳定及低沉积速率。
由MoOCl4形成的钼膜的二次离子质谱法(SIMS)分析验证块状钼中的氧浓度远低于1％，其使用针对块状钼的大约6.4x 1022cm-3的数密度。
实例6-与MoCl5的比较-电阻率研究
图10是依据钼膜厚度(以埃为单位)而变化的经沉积钼膜(以μΩ·cm为单位)的膜电阻率的图表，其是针对在700℃下进行的CVD沉积工艺、针对使用未纯化MoCl5前驱体(Δ)沉积的钼膜、使用升华MoCl5前驱体(□)沉积的钼膜及使用四氯氧化钼(MoOCl4)前驱体(◇)沉积的钼膜。工艺条件如下：安瓿温度＝70℃；压力＝60托；氩载气流率＝50sccm；氢气流率＝2000sccm。结果展示相较于使用未纯化MoCl5前驱体及升华MoCl5前驱体形成的膜，MoOCl4前驱体产生具有更高电阻率值的钼膜。
实例7-二硼烷浸泡研究
调查使用二硼烷预浸泡衬底的效果。图11是依据二硼烷浸泡时间(以秒为单位)而变化的钼膜厚度(以埃为单位)的图表，其是针对400℃下的二硼烷曝露及使用四氯氧化钼(MoOCl4)前驱体(○)的500℃块状钼沉积，及针对300℃下的二硼烷曝露及使用四氯氧化钼(MoOCl4)前驱体(Δ)的500℃块状钼沉积。
图11中的结果展示达30秒的300℃的二硼烷曝露条件及500℃下的四氯氧化钼(MoOCl4)前驱体曝露未导致钼沉积，且有必要增加二硼烷曝露温度或二硼烷浸泡时间以便获得实质钼生长。
实例8-SEM研究-使用二硼烷成核
图12及13是使用500℃二硼烷成核形成的膜沉积及在存在氢的情况下使用四氯氧化钼(MoOCl4)前驱体的500℃块状钼沉积的SEM显微照片。用于二硼烷浸泡的工艺条件如下：安瓿温度＝70℃；压力＝40托；二硼烷流率＝35sccm；氩载气流率＝500sccm；氢流率＝0sccm；持续时间＝30秒。用于MoOCl4/H2块状钼沉积的工艺条件如下：阶段温度＝500℃；压力＝60托；氩载气流率＝50sccm；氢流率＝2000sccm；持续时间＝300秒。结果展示500℃的二硼烷成核导致钼沉积，但在钼下方形成过量硼层。
实例9-阶梯覆盖率-3循环二硼烷成核过程
图14及15是通孔中的经沉积膜的SEM图像，其展示3循环成核及使用MoOCl4/H2的钼块状沉积的阶梯覆盖率。二硼烷浸泡中的工艺条件如下：衬底＝通孔TEG；安瓿温度＝70℃；阶段温度＝300℃；压力＝40托；二硼烷流率＝35sccm；氩载气流率＝250sccm；氢流率＝0sccm；持续时间＝60秒。MoOCl4/H2钼沉积的工艺条件如下：阶段温度＝550℃；压力＝60托；氩载气流率＝50sccm；氢流率＝2000sccm；持续时间＝60秒。SEM图像展示MoOCl4/B2H6成核过程(3个循环)展现通孔结构上的良好阶梯覆盖率。
相关联工艺化学过程包含以下反应：MoOCl4+3H2→Mo+4HCl+H2O；及2MoOCl4+B2H6→2Mo+2BCl3+2HCl+2H2O。
在根据本发明从MoOCl4沉积的代表性钼膜上进行X射线衍射测量，且XRT测量仅展示Mo金属峰值而不存在MoO2或MoO3峰值。
在根据本发明形成的代表性钼膜上的X射线反射率(XRR)测量展示在的X射线荧光(XRF)光谱测定法测量膜上的具有大约8.33g/cm3的密度的～13.4nm钼。
实例10-二硼烷浸泡时间-对厚度及电阻率的影响
图16是依据二硼烷浸泡时间(以秒为单位)而变化的钼厚度(Δ)(以埃为单位)及电阻率(条形图行标记)(以μΩ·cm为单位)的图表，其是针对包含在阶段温度＝300℃；压力＝44；二硼烷流率＝35sccm；氩载气流率＝250sccm的工艺条件下的成核及在阶段温度＝550℃；安瓿温度＝70℃；压力＝60托；氩载气流率＝50sccm；氢气流率2000sccm的工艺条件下达600秒的块状钼沉积的沉积工艺，所述图表展示二硼烷浸泡时间效果。数据展示使用60秒或更长的二硼烷预浸泡，在550℃的阶段温度下实现钼沉积。如展示，膜电阻率在较长二硼烷浸泡时间周期下增加。
实例11-厚度及电阻率研究-使用二硼烷成核
图17是依据MoOCl4/H2曝露时间(以秒为单位)而变化的钼厚度(Δ)(以埃为单位)及依据MoOCl4/H2曝露时间而变化的电阻率(○)(以μΩ·cm为单位)的图表，其是针对包含在阶段温度＝300℃；压力＝40托；二硼烷流率＝35sccm；氩载气流率＝250sccm；持续时间＝60秒的工艺条件下的成核及在阶段温度＝550℃；安瓿温度＝70℃；压力＝60托；氩载气流率＝50sccm；及氢气流率＝2000sccm的条件下的块状钼沉积的沉积工艺。如展示，使用60秒二硼烷预浸泡，钼沉积厚度在550℃下随着MoOCl4/H2曝露时间而生长。膜电阻率对于大于的厚度下降到低于20μΩ·cm。
实例12-SEM研究-使用二硼烷成核
图18是在550℃下沉积的钼膜的SEM图像，且图19是如在以下二硼烷浸泡工艺条件下沉积的此膜的SEM横截面图像：安瓿温度＝70℃；阶段温度＝300℃；压力＝40托；二硼烷流率＝35sccm；氩载气流率＝250sccm；氢气流率＝0sccm；及持续时间＝90秒，接着为通过MoOCl4/H2过程在以下工艺条件下的块状钼沉积：阶段温度＝550℃；压力＝60托；氩载气流率＝50sccm；氢气流率＝2000sccm；及持续时间＝600秒(一个循环)。膜的X RF厚度为且测得电阻率为21.6μΩ·cm。SEM图像对于在550℃下使用90秒二硼烷预浸泡沉积的钼展示大约40到70nm的晶粒大小。横截面SEM图像展示在经沉积钼下方的大约7.7nm的硼层。
实例13-阶段温度研究-使用及不使用二硼烷成核
图20是依据阶段温度(以摄氏度为单位)而变化的钼厚度(Δ)(以埃为单位)及依据阶段温度而变化的电阻率(○)(以μΩ·cm为单位)的图表，其展示针对如在阶段温度＝300℃；压力＝40托；二硼烷流率＝35sccm；氩载气流率＝250sccm；持续时间＝60秒的二硼烷成核条件下及在安瓿温度＝70℃；压力＝60托；氩载气流率＝50sccm；氢气流率＝2000sccm；持续时间＝5分钟的块状钼沉积工艺条件下进行的使用二硼烷成核的MoOCl4/H2过程的反应速率限制体系。数据展示使用二硼烷成核，随着在500℃与540℃之间的快速沉积速率下降，钼沉积截止温度下降到500℃。
图21是依据阶段温度(以摄氏度为单位)而变化的钼厚度(Δ)(以埃为单位)及依据阶段温度而变化的电阻率(○)(以μΩ·cm为单位)的图表，其展示针对如在安瓿温度＝70℃；压力＝60托；氩载气流率＝50sccm；氢气流率＝2000sccm；持续时间＝5分钟的工艺条件下进行的不使用二硼烷成核的MoOCl4/H2过程的反应速率限制体系。数据展示针对不使用二硼烷成核的CVD过程的沉积速率随着在趋近560℃下的截止温度而快速下降到低于600℃。
实例14-阿瑞尼氏图-使用及不使用二硼烷成核
图22是针对如不使用成核(Δ)进行的及如使用成核(○)进行的MoOCl4/H2反应的活化能的阿瑞尼氏图(K＝A e-Ea/RT)。数据展示针对MoOCl4/H2反应的经提取活化能针对不使用成核的块状钼过程沉积为大约233kJ/摩尔，且针对使用二硼烷成核的块状钼沉积工艺为大约251kJ/摩尔。
实例15-阶梯覆盖率
图23及24展示通过如在以下工艺条件下进行的成核及CVD块状钼沉积MoOCl4/H2过程的通孔结构上的阶梯覆盖率：衬底＝通孔TEG；安瓿温度＝70℃，其中二硼烷成核(浸泡)过程在阶段温度＝300℃；压力＝40托；二硼烷流率＝35sccm；氩载气流率＝250sccm；氢气流率＝0sccm；持续时间＝60秒的工艺条件下进行，且其中块状钼沉积CVD过程在阶段温度＝520℃；压力＝60托；氩载气流率＝50sccm；氢气流率＝2000sccm；及持续时间＝600秒的条件下实行。图像展示使用一个二硼烷成核循环的520℃MoOCl4/H2过程展示通孔结构上的大约50％的阶梯覆盖率(底部/顶部)。
实例16-阶梯覆盖率-沉积时间的影响
图25、26及27展示使用钼通过二硼烷成核(浸泡)及520℃CVD块状钼沉积MoOCl4/H2过程分别在300秒、450秒及600秒的块状沉积工艺时间下沉积的相应通孔结构。工艺条件如下：衬底＝通孔TEG；安瓿温度＝70℃，其中二硼烷成核(浸泡)过程在阶段温度＝300℃；压力＝40托；二硼烷流率＝35sccm；氩载气流率＝250sccm；氢气流率＝0sccm；持续时间＝60秒的工艺条件下进行，且其中块状钼沉积CVD过程在阶段温度＝520℃；压力＝60托；氩载气流率＝50sccm；氢气流率＝2000sccm；及持续时间＝300秒(图25)、450秒(图26)及600秒(图27)的条件下实行。图像展示归因于在结构的“颈部”处的约束，使用一个二硼烷成核循环的520℃MoOCl4/H2过程展现随着增加的沉积的通孔结构上的逐渐减少的阶梯覆盖率。
实例17-阶梯覆盖率-温度的影响
图28、29及30展示使用钼通过二硼烷成核(浸泡)及CVD块状钼沉积MoOCl4/H2过程分别在510℃、520℃及530℃的块状沉积温度下沉积的相应通孔结构。工艺条件如下：衬底＝通孔TEG；安瓿温度＝70℃，其中二硼烷成核(浸泡)过程在阶段温度＝300℃；压力＝40托；二硼烷流率＝35sccm；氩载气流率＝250sccm；氢气流率＝0sccm；持续时间＝60秒的工艺条件下进行，且其中块状钼沉积CVD过程在阶段温度＝510℃(图28)、520℃(图29)及530℃(图30)；压力＝60托；氩载气流率＝50sccm；氢气流率＝2000sccm；及持续时间＝600秒的条件下实行。图像展示归因于粗糙膜形态，510℃MoOCl4/H2过程展现差阶梯覆盖率，520℃过程展示通孔结构上的大约50％的阶梯覆盖率，且阶梯覆盖率针对530℃的过程降级到约30％。
实例18-阶梯覆盖率-二硼烷浸泡时间的影响
图31、32及33展示使用钼通过二硼烷成核(浸泡)及CVD块状钼沉积MoOCl4/H2过程分别在45秒(图31)、60秒(图32)及75秒(图33)的二硼烷剂量(浸泡)时间下沉积的相应通孔结构。工艺条件如下：衬底＝通孔TEG；安瓿温度＝70℃，其中二硼烷成核(浸泡)过程在阶段温度＝300℃；压力＝40托；二硼烷流率＝35sccm；氩载气流率＝250sccm；氢气流率＝0sccm的工艺条件下进行，且其中块状钼沉积CVD过程在阶段温度＝520℃；压力＝60托；氩载气流率＝50sccm；氢气流率＝2000sccm；及持续时间＝450秒的条件下实行。图像展示针对60秒及75秒二硼烷浸泡条件的经沉积钼下方清晰可见的硼层。
实例19-阶梯覆盖率-在60托下脉冲化
图34、35及36是使用钼通过二硼烷成核(浸泡)及CVD块状钼沉积MoOCl4/H2过程(其涉及在60托下针对120个循环进行的经脉冲CVD过程)沉积的通孔结构的SEM图像，其中图34展示具有具备的钼膜厚度的上部分及具备的钼膜厚度的下部分的通孔，图35展示在其中间部分处具有的钼膜厚度的通孔，且图36展示具有的钼膜厚度的通孔的下部分，其是在以下工艺条件下：衬底＝通孔TEG；安瓿温度＝70℃，其中二硼烷成核(浸泡)过程在阶段温度＝300℃；压力＝40托；二硼烷流率＝35sccm；氩载气流率＝250sccm；氢气流率＝0sccm；及持续时间＝45秒的工艺条件下进行，且其中经脉冲钼沉积CVD过程在阶段温度＝520℃；压力＝60托；氩载气流率＝50sccm；氢气流率＝2000sccm；脉冲持续时间＝5秒；清除持续时间＝10秒；且循环数目＝120的条件下实行。具有在每一脉冲之间的10秒清除的脉冲CVD工艺展现在结构的颈部附近的减少积累。阶梯覆盖率针对大约厚度的块状钼沉积是大约75％。
实例20-阶梯覆盖率-在40托下脉冲化
图37及38是使用钼通过二硼烷成核(浸泡)及CVD块状钼沉积MoOCl4/H2过程(其涉及在40托下针对120个循环进行的脉冲CVD过程)沉积的通孔结构的SEM图像，其中图37展示具有具备的钼膜厚度的上部分，及具备的钼膜厚度的中间部分，及具备的钼膜厚度的下部分的通孔，且图38展示在其下部分处的通孔，其中过程是在以下工艺条件下进行：衬底＝通孔TEG；安瓿温度＝70℃，其中二硼烷成核(浸泡)过程在阶段温度＝300℃；压力＝40托；二硼烷流率＝35sccm；氩载气流率＝250sccm；氢气流率＝0sccm；及持续时间＝45秒的工艺条件下进行，且其中经脉冲钼沉积CVD过程在阶段温度＝520℃；压力＝40托；氩载气流率＝50sccm；氢气流率＝2000sccm；脉冲持续时间＝5秒；清除持续时间＝10秒；且循环数目＝120的条件下实行。在40托下的脉冲CVD过程展示具有在顶部上的较薄沉积及在通孔内部的较厚沉积的极佳阶梯覆盖率。在此通孔结构上的标称阶梯覆盖率超过100％。
实例21-阶梯覆盖率-在40托下脉冲化-增加的循环数目
图39及40是使用钼通过二硼烷成核(浸泡)及CVD块状钼沉积MoOCl4/H2过程(其涉及在40托下针对240个循环进行的脉冲CVD过程)沉积的通孔结构的SEM图像，其中图39展示具有具备的钼膜厚度的中间部分，及具备的钼膜厚度的下部分的通孔，且图40展示在其下部分处的通孔，其中过程在以下工艺条件下进行：衬底＝通孔TEG；安瓿温度＝70℃，其中二硼烷成核(浸泡)过程在阶段温度＝300℃；压力＝40托；二硼烷流率＝35sccm；氩载气流率＝250sccm；氢气流率＝0sccm；及持续时间＝45秒的工艺条件下进行，且其中经脉冲钼沉积CVD过程在阶段温度＝520℃；压力＝40托；氩载气流率＝50sccm；氢气流率＝2000sccm；脉冲持续时间＝5秒；清除持续时间＝10秒；及循环数目＝240的条件下实行。归因于在通孔颈部处的夹止，将40托压力的循环数目从120增加到240未导致无空隙填充。
实例22-蚀刻速率
探索硼成核表面(CVD B)上的MoOCl4/H2过程的蚀刻速率。在阶段温度＝500℃；压力＝20托；氩载气流率＝50sccm；氢气流率＝2000sccm的条件下实行过程。在表1中展示进一步条件及所得蚀刻速率：
表1：
蚀刻速率未由曝露到空气而影响。Mo衬底上的厚硼膜的蚀刻速率远高于TiN衬底上的硼膜上的蚀刻速率。此可归因于厚硼膜的表面粗糙度。
实例23-其它衬底
在一系列衬底上实行MoOCl4/H2过程。过程在以下条件下实行：阶段温度＝500℃；压力＝60托；氩载气流率＝50sccm；氢气流率＝2000sccm。在表2中展示进一步条件及衬底：
表2：
经沉积钼展现广范围的电阻率。电阻率不随着厚度而变化，其中衬底是PVD Mo。如从先前结果提及，电阻率非常取决于无硼成核层的TiN衬底的阶段温度。
论述
下文展示，使用MoOCl4前驱体沉积的CVD钼膜展示在的厚度下的小于15μΩ·cm的良好膜电阻率，且SIMS分析展示块状钼膜中的氧浓度针对使用MoOCl4前驱体沉积的膜远低于1原子百分比。在TiN衬底上，CVD MoOCl4/H2过程展现在大约560℃下的不使用二硼烷成核的过程温度截止及在大约500℃下的使用二硼烷成核的截止。从阿瑞尼氏图提取的活化能针对不使用成核的过程为大约223kJ/摩尔，且针对使用二硼烷成核的过程为大约251kJ/摩尔。使用二硼烷成核的CVD MoOCl4/H2过程展现通孔结构上的极佳阶梯覆盖率，且证实脉冲化CVD工艺在的膜厚度下实现且甚至超过100％的阶梯覆盖率。
虽然本文中已参考特定方面、特征及说明性实施例陈述本发明，但应了解，不因此限制本发明的利用，而延伸到且涵盖数个其它变化、修改及替代实施例，如将基于本文中的描述向本发明领域的一般技术人员建议其自身。对应地，如下文主张的本发明希望被广泛理解且解译为包含在其精神及范围内的所有此类变化、修改及替代实施例。
贯穿本说明书的描述及权利要求书，词组“包括”及“含有”及词组的变化(例如，“包括(comprising及comprises)”)意味着“包含(但不限于)”且不排除其它组件、整数或步骤。此外，单数涵盖复数，除非上下文另外要求：特定来说，在使用不定冠词的情况中，将说明书理解为预期复数以及单数，除非上下文另外要求。
本发明的每一方面的任选特征可如结合任何其它方面所描述那样。在本申请案的范围内，明确希望可独立或以任何组合获取在先前段落中、且在权利要求书及图式中，且特定来说，其个别特征陈述的各种方面、实施例、实例及替代例。即，可以任何方式及/或组合来组合任何实施例的全部实施例及/或特征，除非此类特征不兼容。

Claims (18)

1.一种在衬底上形成含钼材料的方法，其包括在气相沉积条件下使所述衬底与四氯氧化钼(MoOCl4)蒸气接触，以在所述衬底上沉积所述含钼材料。
2.根据权利要求1所述的方法，其包括在所述衬底上建立成核表面，且其中所述衬底与四氯氧化钼(MoOCl4)蒸气的所述接触包括使所述衬底的所述成核表面与四氯氧化钼(MoOCl4)蒸气接触以在所述衬底上沉积所述含钼材料。
3.根据权利要求2所述的方法，其中在所述衬底上建立所述成核表面包括使所述衬底与二硼烷蒸气接触且任选地分开地与四氯氧化钼(MoOCl4)蒸气接触。
4.根据权利要求2或权利要求3所述的方法，其中建立所述成核表面包括使所述衬底与二硼烷蒸气且分开地与四氯氧化钼(MoOCl4)蒸气接触的多个循环。
5.根据权利要求3或权利要求4所述的方法，其中氮化钛与二硼烷蒸气的接触在从300℃到450℃的范围内的温度下进行。
6.根据任一前述权利要求所述的方法，其中所述气相沉积条件是脉冲气相沉积条件。
7.根据任一前述权利要求所述的方法，其中所述气相沉积条件经选择使得所述经沉积含钼材料具有最多20μΩ·cm的电阻率。
8.根据任一前述权利要求所述的方法，其中所述含钼材料在从400℃到600℃的范围内、任选地400℃到575℃的温度下沉积。
9.根据任一前述权利要求所述的方法，其包括使四氯氧化钼(MoOCl4)挥发以形成所述四氯氧化钼(MoOCl4)蒸气。
10.根据任一前述权利要求所述的方法，其中所述气相沉积条件包括还原环境，任选地存在氢，使得所述含钼材料包括元素钼材料。
11.根据任一前述权利要求所述的方法，其中所述含钼材料包括氧化钼。
12.根据任一前述权利要求所述的方法，其中所述衬底包括TiN、Mo、MoC、B、SiO2、W及WCN中的一或多者。
13.根据任一前述权利要求所述的方法，其中：所述衬底包括包含其上具有氮化钛层的二氧化硅的半导体装置衬底；所述方法包括在所述氮化钛层上形成成核表面；且所述含钼材料沉积于所述成核层上。
14.根据权利要求13所述的方法，其中所述成核表面通过包括使所述氮化钛层与二硼烷蒸气且分开地与四氯氧化钼(MoOCl4)蒸气接触的脉冲CVD或ALD沉积形成。
15.根据任一前述权利要求所述的方法，其在用于在所述衬底上制作半导体装置的工艺中实施。
16.根据权利要求15所述的方法，其中所述半导体装置包括DRAM装置及3-D NAND装置中的至少一者。
17.根据任一前述权利要求所述的方法，其中所述衬底包括其中沉积所述含钼材料的通孔，所述通孔任选地具有在从20:1到30:1的范围中的深度对横向尺寸的纵横比。
18.根据任一前述权利要求所述的方法，其中所述含钼材料以从90％到110％的阶梯覆盖率沉积于所述衬底上。
CN201780054079.8A 2016-07-14 2017-07-13 使用MoOC14的CVD Mo沉积 Active CN109661481B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201662362582P 2016-07-14 2016-07-14
US62/362,582 2016-07-14
PCT/US2017/041883 WO2018013778A1 (en) 2016-07-14 2017-07-13 Cvd mo deposition by using mooc14

Publications (2)

Publication Number Publication Date
CN109661481A true CN109661481A (zh) 2019-04-19
CN109661481B CN109661481B (zh) 2021-11-30

Family

ID=59579905

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201780054079.8A Active CN109661481B (zh) 2016-07-14 2017-07-13 使用MoOC14的CVD Mo沉积

Country Status (6)

Country Link
US (2) US20180019165A1 (zh)
JP (1) JP6793243B2 (zh)
KR (1) KR102266610B1 (zh)
CN (1) CN109661481B (zh)
TW (1) TWI648421B (zh)
WO (1) WO2018013778A1 (zh)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110731003A (zh) * 2017-04-10 2020-01-24 朗姆研究公司 含钼的低电阻率的膜
CN111514881A (zh) * 2020-05-15 2020-08-11 山西大学 一种硼氧化钼纳米多孔薄膜电催化剂及其制备方法和应用
CN113195783A (zh) * 2018-12-19 2021-07-30 恩特格里斯公司 在还原共反应剂存在下沉积钨或钼层的方法
CN114599624A (zh) * 2019-10-21 2022-06-07 万腾荣公司 具有改善的堆积密度的氯氧化钼
US11821071B2 (en) 2019-03-11 2023-11-21 Lam Research Corporation Precursors for deposition of molybdenum-containing films
US11970776B2 (en) 2019-01-28 2024-04-30 Lam Research Corporation Atomic layer deposition of metal films

Families Citing this family (289)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9394608B2 (en) 2009-04-06 2016-07-19 Asm America, Inc. Semiconductor processing reactor and components thereof
US8802201B2 (en) 2009-08-14 2014-08-12 Asm America, Inc. Systems and methods for thin-film deposition of metal oxides using excited nitrogen-oxygen species
US9312155B2 (en) 2011-06-06 2016-04-12 Asm Japan K.K. High-throughput semiconductor-processing apparatus equipped with multiple dual-chamber modules
US10854498B2 (en) 2011-07-15 2020-12-01 Asm Ip Holding B.V. Wafer-supporting device and method for producing same
US20130023129A1 (en) 2011-07-20 2013-01-24 Asm America, Inc. Pressure transmitter for a semiconductor processing environment
US9017481B1 (en) 2011-10-28 2015-04-28 Asm America, Inc. Process feed management for semiconductor substrate processing
US10714315B2 (en) 2012-10-12 2020-07-14 Asm Ip Holdings B.V. Semiconductor reaction chamber showerhead
US20160376700A1 (en) 2013-02-01 2016-12-29 Asm Ip Holding B.V. System for treatment of deposition reactor
US10683571B2 (en) 2014-02-25 2020-06-16 Asm Ip Holding B.V. Gas supply manifold and method of supplying gases to chamber using same
US10167557B2 (en) 2014-03-18 2019-01-01 Asm Ip Holding B.V. Gas distribution system, reactor including the system, and methods of using the same
US11015245B2 (en) 2014-03-19 2021-05-25 Asm Ip Holding B.V. Gas-phase reactor and system having exhaust plenum and components thereof
US10858737B2 (en) 2014-07-28 2020-12-08 Asm Ip Holding B.V. Showerhead assembly and components thereof
US9890456B2 (en) 2014-08-21 2018-02-13 Asm Ip Holding B.V. Method and system for in situ formation of gas-phase compounds
US9657845B2 (en) 2014-10-07 2017-05-23 Asm Ip Holding B.V. Variable conductance gas distribution apparatus and method
US10941490B2 (en) 2014-10-07 2021-03-09 Asm Ip Holding B.V. Multiple temperature range susceptor, assembly, reactor and system including the susceptor, and methods of using the same
US10276355B2 (en) 2015-03-12 2019-04-30 Asm Ip Holding B.V. Multi-zone reactor, system including the reactor, and method of using the same
US10458018B2 (en) 2015-06-26 2019-10-29 Asm Ip Holding B.V. Structures including metal carbide material, devices including the structures, and methods of forming same
US10600673B2 (en) 2015-07-07 2020-03-24 Asm Ip Holding B.V. Magnetic susceptor to baseplate seal
US10211308B2 (en) 2015-10-21 2019-02-19 Asm Ip Holding B.V. NbMC layers
US11139308B2 (en) 2015-12-29 2021-10-05 Asm Ip Holding B.V. Atomic layer deposition of III-V compounds to form V-NAND devices
US10529554B2 (en) 2016-02-19 2020-01-07 Asm Ip Holding B.V. Method for forming silicon nitride film selectively on sidewalls or flat surfaces of trenches
US10865475B2 (en) 2016-04-21 2020-12-15 Asm Ip Holding B.V. Deposition of metal borides and silicides
US10190213B2 (en) 2016-04-21 2019-01-29 Asm Ip Holding B.V. Deposition of metal borides
US10367080B2 (en) 2016-05-02 2019-07-30 Asm Ip Holding B.V. Method of forming a germanium oxynitride film
US10032628B2 (en) 2016-05-02 2018-07-24 Asm Ip Holding B.V. Source/drain performance through conformal solid state doping
US11453943B2 (en) 2016-05-25 2022-09-27 Asm Ip Holding B.V. Method for forming carbon-containing silicon/metal oxide or nitride film by ALD using silicon precursor and hydrocarbon precursor
US9859151B1 (en) 2016-07-08 2018-01-02 Asm Ip Holding B.V. Selective film deposition method to form air gaps
US10612137B2 (en) 2016-07-08 2020-04-07 Asm Ip Holdings B.V. Organic reactants for atomic layer deposition
US10714385B2 (en) 2016-07-19 2020-07-14 Asm Ip Holding B.V. Selective deposition of tungsten
US9887082B1 (en) 2016-07-28 2018-02-06 Asm Ip Holding B.V. Method and apparatus for filling a gap
US9812320B1 (en) 2016-07-28 2017-11-07 Asm Ip Holding B.V. Method and apparatus for filling a gap
KR102532607B1 (ko) 2016-07-28 2023-05-15 에이에스엠 아이피 홀딩 비.브이. 기판 가공 장치 및 그 동작 방법
US10573522B2 (en) 2016-08-16 2020-02-25 Lam Research Corporation Method for preventing line bending during metal fill process
US10643826B2 (en) 2016-10-26 2020-05-05 Asm Ip Holdings B.V. Methods for thermally calibrating reaction chambers
US11532757B2 (en) 2016-10-27 2022-12-20 Asm Ip Holding B.V. Deposition of charge trapping layers
US10643904B2 (en) 2016-11-01 2020-05-05 Asm Ip Holdings B.V. Methods for forming a semiconductor device and related semiconductor device structures
US10229833B2 (en) 2016-11-01 2019-03-12 Asm Ip Holding B.V. Methods for forming a transition metal nitride film on a substrate by atomic layer deposition and related semiconductor device structures
US10714350B2 (en) 2016-11-01 2020-07-14 ASM IP Holdings, B.V. Methods for forming a transition metal niobium nitride film on a substrate by atomic layer deposition and related semiconductor device structures
US10134757B2 (en) 2016-11-07 2018-11-20 Asm Ip Holding B.V. Method of processing a substrate and a device manufactured by using the method
KR102546317B1 (ko) 2016-11-15 2023-06-21 에이에스엠 아이피 홀딩 비.브이. 기체 공급 유닛 및 이를 포함하는 기판 처리 장치
US10453744B2 (en) 2016-11-23 2019-10-22 Entegris, Inc. Low temperature molybdenum film deposition utilizing boron nucleation layers
KR20180068582A (ko) 2016-12-14 2018-06-22 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치
US11581186B2 (en) 2016-12-15 2023-02-14 Asm Ip Holding B.V. Sequential infiltration synthesis apparatus
US11447861B2 (en) 2016-12-15 2022-09-20 Asm Ip Holding B.V. Sequential infiltration synthesis apparatus and a method of forming a patterned structure
KR20180070971A (ko) 2016-12-19 2018-06-27 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치
US10269558B2 (en) 2016-12-22 2019-04-23 Asm Ip Holding B.V. Method of forming a structure on a substrate
US10867788B2 (en) 2016-12-28 2020-12-15 Asm Ip Holding B.V. Method of forming a structure on a substrate
US11390950B2 (en) 2017-01-10 2022-07-19 Asm Ip Holding B.V. Reactor system and method to reduce residue buildup during a film deposition process
US10655221B2 (en) 2017-02-09 2020-05-19 Asm Ip Holding B.V. Method for depositing oxide film by thermal ALD and PEALD
US10468261B2 (en) 2017-02-15 2019-11-05 Asm Ip Holding B.V. Methods for forming a metallic film on a substrate by cyclical deposition and related semiconductor device structures
US10529563B2 (en) 2017-03-29 2020-01-07 Asm Ip Holdings B.V. Method for forming doped metal oxide films on a substrate by cyclical deposition and related semiconductor device structures
USD876504S1 (en) 2017-04-03 2020-02-25 Asm Ip Holding B.V. Exhaust flow control ring for semiconductor deposition apparatus
KR102457289B1 (ko) 2017-04-25 2022-10-21 에이에스엠 아이피 홀딩 비.브이. 박막 증착 방법 및 반도체 장치의 제조 방법
US10770286B2 (en) 2017-05-08 2020-09-08 Asm Ip Holdings B.V. Methods for selectively forming a silicon nitride film on a substrate and related semiconductor device structures
US10892156B2 (en) 2017-05-08 2021-01-12 Asm Ip Holding B.V. Methods for forming a silicon nitride film on a substrate and related semiconductor device structures
US10886123B2 (en) 2017-06-02 2021-01-05 Asm Ip Holding B.V. Methods for forming low temperature semiconductor layers and related semiconductor device structures
US11306395B2 (en) 2017-06-28 2022-04-19 Asm Ip Holding B.V. Methods for depositing a transition metal nitride film on a substrate by atomic layer deposition and related deposition apparatus
US10685834B2 (en) 2017-07-05 2020-06-16 Asm Ip Holdings B.V. Methods for forming a silicon germanium tin layer and related semiconductor device structures
KR20190009245A (ko) 2017-07-18 2019-01-28 에이에스엠 아이피 홀딩 비.브이. 반도체 소자 구조물 형성 방법 및 관련된 반도체 소자 구조물
US10541333B2 (en) 2017-07-19 2020-01-21 Asm Ip Holding B.V. Method for depositing a group IV semiconductor and related semiconductor device structures
US11374112B2 (en) 2017-07-19 2022-06-28 Asm Ip Holding B.V. Method for depositing a group IV semiconductor and related semiconductor device structures
US11018002B2 (en) 2017-07-19 2021-05-25 Asm Ip Holding B.V. Method for selectively depositing a Group IV semiconductor and related semiconductor device structures
US10590535B2 (en) 2017-07-26 2020-03-17 Asm Ip Holdings B.V. Chemical treatment, deposition and/or infiltration apparatus and method for using the same
US10770336B2 (en) 2017-08-08 2020-09-08 Asm Ip Holding B.V. Substrate lift mechanism and reactor including same
US10692741B2 (en) 2017-08-08 2020-06-23 Asm Ip Holdings B.V. Radiation shield
US11769682B2 (en) 2017-08-09 2023-09-26 Asm Ip Holding B.V. Storage apparatus for storing cassettes for substrates and processing apparatus equipped therewith
US10249524B2 (en) 2017-08-09 2019-04-02 Asm Ip Holding B.V. Cassette holder assembly for a substrate cassette and holding member for use in such assembly
US11139191B2 (en) 2017-08-09 2021-10-05 Asm Ip Holding B.V. Storage apparatus for storing cassettes for substrates and processing apparatus equipped therewith
USD900036S1 (en) 2017-08-24 2020-10-27 Asm Ip Holding B.V. Heater electrical connector and adapter
US11830730B2 (en) 2017-08-29 2023-11-28 Asm Ip Holding B.V. Layer forming method and apparatus
US20190067095A1 (en) * 2017-08-30 2019-02-28 Asm Ip Holding B.V. Layer forming method
US11295980B2 (en) 2017-08-30 2022-04-05 Asm Ip Holding B.V. Methods for depositing a molybdenum metal film over a dielectric surface of a substrate by a cyclical deposition process and related semiconductor device structures
US11056344B2 (en) 2017-08-30 2021-07-06 Asm Ip Holding B.V. Layer forming method
KR102491945B1 (ko) 2017-08-30 2023-01-26 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치
KR102401446B1 (ko) 2017-08-31 2022-05-24 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치
KR102630301B1 (ko) 2017-09-21 2024-01-29 에이에스엠 아이피 홀딩 비.브이. 침투성 재료의 순차 침투 합성 방법 처리 및 이를 이용하여 형성된 구조물 및 장치
US10844484B2 (en) 2017-09-22 2020-11-24 Asm Ip Holding B.V. Apparatus for dispensing a vapor phase reactant to a reaction chamber and related methods
US10658205B2 (en) 2017-09-28 2020-05-19 Asm Ip Holdings B.V. Chemical dispensing apparatus and methods for dispensing a chemical to a reaction chamber
US10403504B2 (en) 2017-10-05 2019-09-03 Asm Ip Holding B.V. Method for selectively depositing a metallic film on a substrate
US10319588B2 (en) 2017-10-10 2019-06-11 Asm Ip Holding B.V. Method for depositing a metal chalcogenide on a substrate by cyclical deposition
US10923344B2 (en) 2017-10-30 2021-02-16 Asm Ip Holding B.V. Methods for forming a semiconductor structure and related semiconductor structures
KR102443047B1 (ko) 2017-11-16 2022-09-14 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치 방법 및 그에 의해 제조된 장치
US10910262B2 (en) 2017-11-16 2021-02-02 Asm Ip Holding B.V. Method of selectively depositing a capping layer structure on a semiconductor device structure
US11022879B2 (en) 2017-11-24 2021-06-01 Asm Ip Holding B.V. Method of forming an enhanced unexposed photoresist layer
CN111344522B (zh) 2017-11-27 2022-04-12 阿斯莫Ip控股公司 包括洁净迷你环境的装置
KR102597978B1 (ko) 2017-11-27 2023-11-06 에이에스엠 아이피 홀딩 비.브이. 배치 퍼니스와 함께 사용하기 위한 웨이퍼 카세트를 보관하기 위한 보관 장치
US10872771B2 (en) 2018-01-16 2020-12-22 Asm Ip Holding B. V. Method for depositing a material film on a substrate within a reaction chamber by a cyclical deposition process and related device structures
TW202325889A (zh) * 2018-01-19 2023-07-01 荷蘭商Ａｓｍ 智慧財產控股公司 沈積方法
US11560625B2 (en) * 2018-01-19 2023-01-24 Entegris, Inc. Vapor deposition of molybdenum using a bis(alkyl-arene) molybdenum precursor
KR20200108016A (ko) 2018-01-19 2020-09-16 에이에스엠 아이피 홀딩 비.브이. 플라즈마 보조 증착에 의해 갭 충진 층을 증착하는 방법
USD903477S1 (en) 2018-01-24 2020-12-01 Asm Ip Holdings B.V. Metal clamp
US11018047B2 (en) 2018-01-25 2021-05-25 Asm Ip Holding B.V. Hybrid lift pin
USD880437S1 (en) 2018-02-01 2020-04-07 Asm Ip Holding B.V. Gas supply plate for semiconductor manufacturing apparatus
US11081345B2 (en) 2018-02-06 2021-08-03 Asm Ip Holding B.V. Method of post-deposition treatment for silicon oxide film
CN111699278B (zh) 2018-02-14 2023-05-16 Asm Ip私人控股有限公司 通过循环沉积工艺在衬底上沉积含钌膜的方法
US10896820B2 (en) 2018-02-14 2021-01-19 Asm Ip Holding B.V. Method for depositing a ruthenium-containing film on a substrate by a cyclical deposition process
US10731249B2 (en) 2018-02-15 2020-08-04 Asm Ip Holding B.V. Method of forming a transition metal containing film on a substrate by a cyclical deposition process, a method for supplying a transition metal halide compound to a reaction chamber, and related vapor deposition apparatus
KR102636427B1 (ko) 2018-02-20 2024-02-13 에이에스엠 아이피 홀딩 비.브이. 기판 처리 방법 및 장치
US10658181B2 (en) 2018-02-20 2020-05-19 Asm Ip Holding B.V. Method of spacer-defined direct patterning in semiconductor fabrication
US10975470B2 (en) 2018-02-23 2021-04-13 Asm Ip Holding B.V. Apparatus for detecting or monitoring for a chemical precursor in a high temperature environment
US11473195B2 (en) 2018-03-01 2022-10-18 Asm Ip Holding B.V. Semiconductor processing apparatus and a method for processing a substrate
US11629406B2 (en) 2018-03-09 2023-04-18 Asm Ip Holding B.V. Semiconductor processing apparatus comprising one or more pyrometers for measuring a temperature of a substrate during transfer of the substrate
US11114283B2 (en) 2018-03-16 2021-09-07 Asm Ip Holding B.V. Reactor, system including the reactor, and methods of manufacturing and using same
KR102646467B1 (ko) 2018-03-27 2024-03-11 에이에스엠 아이피 홀딩 비.브이. 기판 상에 전극을 형성하는 방법 및 전극을 포함하는 반도체 소자 구조
US11230766B2 (en) 2018-03-29 2022-01-25 Asm Ip Holding B.V. Substrate processing apparatus and method
US11088002B2 (en) 2018-03-29 2021-08-10 Asm Ip Holding B.V. Substrate rack and a substrate processing system and method
KR102501472B1 (ko) 2018-03-30 2023-02-20 에이에스엠 아이피 홀딩 비.브이. 기판 처리 방법
KR20200135547A (ko) * 2018-04-20 2020-12-02 엔테그리스, 아이엔씨. 붕소 핵생성 층을 이용하는 저온 몰리브데넘 막 증착
SG11202009514WA (en) * 2018-04-24 2020-11-27 Applied Materials Inc Tungsten deposition without barrier layer
WO2019209289A1 (en) * 2018-04-25 2019-10-31 Entegris, Inc. Low temperature molybdenum film depositon utilizing boron nucleation layers
KR20200140391A (ko) 2018-05-03 2020-12-15 램 리써치 코포레이션 3d nand 구조체들에 텅스텐 및 다른 금속들을 증착하는 방법
TWI811348B (zh) 2018-05-08 2023-08-11 荷蘭商Ａｓｍ 智慧財產控股公司 藉由循環沉積製程於基板上沉積氧化物膜之方法及相關裝置結構
TW202349473A (zh) 2018-05-11 2023-12-16 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 用於基板上形成摻雜金屬碳化物薄膜之方法及相關半導體元件結構
KR102596988B1 (ko) 2018-05-28 2023-10-31 에이에스엠 아이피 홀딩 비.브이. 기판 처리 방법 및 그에 의해 제조된 장치
US11718913B2 (en) 2018-06-04 2023-08-08 Asm Ip Holding B.V. Gas distribution system and reactor system including same
US11270899B2 (en) 2018-06-04 2022-03-08 Asm Ip Holding B.V. Wafer handling chamber with moisture reduction
US11286562B2 (en) 2018-06-08 2022-03-29 Asm Ip Holding B.V. Gas-phase chemical reactor and method of using same
US10797133B2 (en) 2018-06-21 2020-10-06 Asm Ip Holding B.V. Method for depositing a phosphorus doped silicon arsenide film and related semiconductor device structures
KR102568797B1 (ko) 2018-06-21 2023-08-21 에이에스엠 아이피 홀딩 비.브이. 기판 처리 시스템
TWI815915B (zh) 2018-06-27 2023-09-21 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 用於形成含金屬材料及包含含金屬材料的膜及結構之循環沉積方法
CN112292478A (zh) 2018-06-27 2021-01-29 Asm Ip私人控股有限公司 用于形成含金属的材料的循环沉积方法及包含含金属的材料的膜和结构
KR20200002519A (ko) 2018-06-29 2020-01-08 에이에스엠 아이피 홀딩 비.브이. 박막 증착 방법 및 반도체 장치의 제조 방법
US10612136B2 (en) 2018-06-29 2020-04-07 ASM IP Holding, B.V. Temperature-controlled flange and reactor system including same
US10388513B1 (en) 2018-07-03 2019-08-20 Asm Ip Holding B.V. Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition
US10755922B2 (en) 2018-07-03 2020-08-25 Asm Ip Holding B.V. Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition
US10767789B2 (en) 2018-07-16 2020-09-08 Asm Ip Holding B.V. Diaphragm valves, valve components, and methods for forming valve components
KR20210027507A (ko) * 2018-07-26 2021-03-10 램 리써치 코포레이션 순수 금속 막의 증착
US11053591B2 (en) 2018-08-06 2021-07-06 Asm Ip Holding B.V. Multi-port gas injection system and reactor system including same
US10883175B2 (en) 2018-08-09 2021-01-05 Asm Ip Holding B.V. Vertical furnace for processing substrates and a liner for use therein
US10829852B2 (en) 2018-08-16 2020-11-10 Asm Ip Holding B.V. Gas distribution device for a wafer processing apparatus
JP7422971B2 (ja) 2018-08-20 2024-01-29 エーエスエム・アイピー・ホールディング・ベー・フェー 基材および関連する半導体デバイス構造の誘電体表面上にモリブデン金属膜を堆積する方法
JP2020029618A (ja) * 2018-08-20 2020-02-27 アーエスエム・イーぺー・ホールディング・ベスローテン・フェンノートシャップ 周期的堆積プロセスによって基材の誘電体表面上にモリブデン金属膜を堆積させる方法および関連する半導体デバイス構造
US11430674B2 (en) 2018-08-22 2022-08-30 Asm Ip Holding B.V. Sensor array, apparatus for dispensing a vapor phase reactant to a reaction chamber and related methods
US11024523B2 (en) 2018-09-11 2021-06-01 Asm Ip Holding B.V. Substrate processing apparatus and method
KR20200030162A (ko) 2018-09-11 2020-03-20 에이에스엠 아이피 홀딩 비.브이. 박막 증착 방법
US11049751B2 (en) 2018-09-14 2021-06-29 Asm Ip Holding B.V. Cassette supply system to store and handle cassettes and processing apparatus equipped therewith
CN110970344A (zh) 2018-10-01 2020-04-07 Asm Ip控股有限公司 衬底保持设备、包含所述设备的系统及其使用方法
US11232963B2 (en) 2018-10-03 2022-01-25 Asm Ip Holding B.V. Substrate processing apparatus and method
KR102592699B1 (ko) 2018-10-08 2023-10-23 에이에스엠 아이피 홀딩 비.브이. 기판 지지 유닛 및 이를 포함하는 박막 증착 장치와 기판 처리 장치
US10847365B2 (en) 2018-10-11 2020-11-24 Asm Ip Holding B.V. Method of forming conformal silicon carbide film by cyclic CVD
US10811256B2 (en) 2018-10-16 2020-10-20 Asm Ip Holding B.V. Method for etching a carbon-containing feature
KR102546322B1 (ko) 2018-10-19 2023-06-21 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치 및 기판 처리 방법
KR102605121B1 (ko) 2018-10-19 2023-11-23 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치 및 기판 처리 방법
US20200131628A1 (en) * 2018-10-24 2020-04-30 Entegris, Inc. Method for forming molybdenum films on a substrate
USD948463S1 (en) 2018-10-24 2022-04-12 Asm Ip Holding B.V. Susceptor for semiconductor substrate supporting apparatus
US11087997B2 (en) 2018-10-31 2021-08-10 Asm Ip Holding B.V. Substrate processing apparatus for processing substrates
KR20200051105A (ko) 2018-11-02 2020-05-13 에이에스엠 아이피 홀딩 비.브이. 기판 지지 유닛 및 이를 포함하는 기판 처리 장치
US11572620B2 (en) 2018-11-06 2023-02-07 Asm Ip Holding B.V. Methods for selectively depositing an amorphous silicon film on a substrate
US11031242B2 (en) 2018-11-07 2021-06-08 Asm Ip Holding B.V. Methods for depositing a boron doped silicon germanium film
US10818758B2 (en) 2018-11-16 2020-10-27 Asm Ip Holding B.V. Methods for forming a metal silicate film on a substrate in a reaction chamber and related semiconductor device structures
US10847366B2 (en) 2018-11-16 2020-11-24 Asm Ip Holding B.V. Methods for depositing a transition metal chalcogenide film on a substrate by a cyclical deposition process
US10559458B1 (en) 2018-11-26 2020-02-11 Asm Ip Holding B.V. Method of forming oxynitride film
US11217444B2 (en) 2018-11-30 2022-01-04 Asm Ip Holding B.V. Method for forming an ultraviolet radiation responsive metal oxide-containing film
KR102636428B1 (ko) 2018-12-04 2024-02-13 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치를 세정하는 방법
US11158513B2 (en) 2018-12-13 2021-10-26 Asm Ip Holding B.V. Methods for forming a rhenium-containing film on a substrate by a cyclical deposition process and related semiconductor device structures
TW202037745A (zh) 2018-12-14 2020-10-16 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 形成裝置結構之方法、其所形成之結構及施行其之系統
TW202405220A (zh) 2019-01-17 2024-02-01 荷蘭商Ａｓｍ Ｉｐ 私人控股有限公司 藉由循環沈積製程於基板上形成含過渡金屬膜之方法
KR20200091543A (ko) 2019-01-22 2020-07-31 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치
CN111524788B (zh) 2019-02-01 2023-11-24 Asm Ip私人控股有限公司 氧化硅的拓扑选择性膜形成的方法
KR20200102357A (ko) 2019-02-20 2020-08-31 에이에스엠 아이피 홀딩 비.브이. 3-d nand 응용의 플러그 충진체 증착용 장치 및 방법
KR102626263B1 (ko) 2019-02-20 2024-01-16 에이에스엠 아이피 홀딩 비.브이. 처리 단계를 포함하는 주기적 증착 방법 및 이를 위한 장치
JP2020136678A (ja) 2019-02-20 2020-08-31 エーエスエム・アイピー・ホールディング・ベー・フェー 基材表面内に形成された凹部を充填するための方法および装置
CN111593319B (zh) 2019-02-20 2023-05-30 Asm Ip私人控股有限公司 用于填充在衬底表面内形成的凹部的循环沉积方法和设备
JP2020133004A (ja) 2019-02-22 2020-08-31 エーエスエム・アイピー・ホールディング・ベー・フェー 基材を処理するための基材処理装置および方法
US11742198B2 (en) 2019-03-08 2023-08-29 Asm Ip Holding B.V. Structure including SiOCN layer and method of forming same
KR20200108243A (ko) 2019-03-08 2020-09-17 에이에스엠 아이피 홀딩 비.브이. SiOC 층을 포함한 구조체 및 이의 형성 방법
KR20200108242A (ko) 2019-03-08 2020-09-17 에이에스엠 아이피 홀딩 비.브이. 실리콘 질화물 층을 선택적으로 증착하는 방법, 및 선택적으로 증착된 실리콘 질화물 층을 포함하는 구조체
JP2020167398A (ja) 2019-03-28 2020-10-08 エーエスエム・アイピー・ホールディング・ベー・フェー ドアオープナーおよびドアオープナーが提供される基材処理装置
KR20200116855A (ko) 2019-04-01 2020-10-13 에이에스엠 아이피 홀딩 비.브이. 반도체 소자를 제조하는 방법
US11447864B2 (en) 2019-04-19 2022-09-20 Asm Ip Holding B.V. Layer forming method and apparatus
KR20200125453A (ko) 2019-04-24 2020-11-04 에이에스엠 아이피 홀딩 비.브이. 기상 반응기 시스템 및 이를 사용하는 방법
KR20200130118A (ko) 2019-05-07 2020-11-18 에이에스엠 아이피 홀딩 비.브이. 비정질 탄소 중합체 막을 개질하는 방법
KR20200130121A (ko) 2019-05-07 2020-11-18 에이에스엠 아이피 홀딩 비.브이. 딥 튜브가 있는 화학물질 공급원 용기
KR20200130652A (ko) 2019-05-10 2020-11-19 에이에스엠 아이피 홀딩 비.브이. 표면 상에 재료를 증착하는 방법 및 본 방법에 따라 형성된 구조
JP2020188254A (ja) 2019-05-16 2020-11-19 エーエスエム アイピー ホールディング ビー．ブイ． ウェハボートハンドリング装置、縦型バッチ炉および方法
JP2020188255A (ja) 2019-05-16 2020-11-19 エーエスエム アイピー ホールディング ビー．ブイ． ウェハボートハンドリング装置、縦型バッチ炉および方法
USD947913S1 (en) 2019-05-17 2022-04-05 Asm Ip Holding B.V. Susceptor shaft
USD975665S1 (en) 2019-05-17 2023-01-17 Asm Ip Holding B.V. Susceptor shaft
USD935572S1 (en) 2019-05-24 2021-11-09 Asm Ip Holding B.V. Gas channel plate
USD922229S1 (en) 2019-06-05 2021-06-15 Asm Ip Holding B.V. Device for controlling a temperature of a gas supply unit
KR20200141002A (ko) 2019-06-06 2020-12-17 에이에스엠 아이피 홀딩 비.브이. 배기 가스 분석을 포함한 기상 반응기 시스템을 사용하는 방법
KR20200143254A (ko) 2019-06-11 2020-12-23 에이에스엠 아이피 홀딩 비.브이. 개질 가스를 사용하여 전자 구조를 형성하는 방법, 상기 방법을 수행하기 위한 시스템, 및 상기 방법을 사용하여 형성되는 구조
USD944946S1 (en) 2019-06-14 2022-03-01 Asm Ip Holding B.V. Shower plate
USD931978S1 (en) 2019-06-27 2021-09-28 Asm Ip Holding B.V. Showerhead vacuum transport
KR20210005515A (ko) 2019-07-03 2021-01-14 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치용 온도 제어 조립체 및 이를 사용하는 방법
JP7499079B2 (ja) 2019-07-09 2024-06-13 エーエスエム・アイピー・ホールディング・ベー・フェー 同軸導波管を用いたプラズマ装置、基板処理方法
CN112216646A (zh) 2019-07-10 2021-01-12 Asm Ip私人控股有限公司 基板支撑组件及包括其的基板处理装置
KR20210010307A (ko) 2019-07-16 2021-01-27 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치
KR20210010820A (ko) 2019-07-17 2021-01-28 에이에스엠 아이피 홀딩 비.브이. 실리콘 게르마늄 구조를 형성하는 방법
KR20210010816A (ko) 2019-07-17 2021-01-28 에이에스엠 아이피 홀딩 비.브이. 라디칼 보조 점화 플라즈마 시스템 및 방법
US11643724B2 (en) 2019-07-18 2023-05-09 Asm Ip Holding B.V. Method of forming structures using a neutral beam
CN112242296A (zh) 2019-07-19 2021-01-19 Asm Ip私人控股有限公司 形成拓扑受控的无定形碳聚合物膜的方法
TW202113936A (zh) 2019-07-29 2021-04-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 用於利用n型摻雜物及/或替代摻雜物選擇性沉積以達成高摻雜物併入之方法
CN112309900A (zh) 2019-07-30 2021-02-02 Asm Ip私人控股有限公司 基板处理设备
CN112309899A (zh) 2019-07-30 2021-02-02 Asm Ip私人控股有限公司 基板处理设备
US11587814B2 (en) 2019-07-31 2023-02-21 Asm Ip Holding B.V. Vertical batch furnace assembly
US11587815B2 (en) 2019-07-31 2023-02-21 Asm Ip Holding B.V. Vertical batch furnace assembly
US11227782B2 (en) 2019-07-31 2022-01-18 Asm Ip Holding B.V. Vertical batch furnace assembly
CN112323048B (zh) 2019-08-05 2024-02-09 Asm Ip私人控股有限公司 用于化学源容器的液位传感器
US11891690B2 (en) 2019-08-12 2024-02-06 Applied Materials, Inc. Molybdenum thin films by oxidation-reduction
USD965524S1 (en) 2019-08-19 2022-10-04 Asm Ip Holding B.V. Susceptor support
USD965044S1 (en) 2019-08-19 2022-09-27 Asm Ip Holding B.V. Susceptor shaft
JP2021031769A (ja) 2019-08-21 2021-03-01 エーエスエム アイピー ホールディング ビー．ブイ． 成膜原料混合ガス生成装置及び成膜装置
USD949319S1 (en) 2019-08-22 2022-04-19 Asm Ip Holding B.V. Exhaust duct
USD940837S1 (en) 2019-08-22 2022-01-11 Asm Ip Holding B.V. Electrode
USD930782S1 (en) 2019-08-22 2021-09-14 Asm Ip Holding B.V. Gas distributor
KR20210024423A (ko) 2019-08-22 2021-03-05 에이에스엠 아이피 홀딩 비.브이. 홀을 구비한 구조체를 형성하기 위한 방법
USD979506S1 (en) 2019-08-22 2023-02-28 Asm Ip Holding B.V. Insulator
US11286558B2 (en) 2019-08-23 2022-03-29 Asm Ip Holding B.V. Methods for depositing a molybdenum nitride film on a surface of a substrate by a cyclical deposition process and related semiconductor device structures including a molybdenum nitride film
KR20210024420A (ko) 2019-08-23 2021-03-05 에이에스엠 아이피 홀딩 비.브이. 비스(디에틸아미노)실란을 사용하여 peald에 의해 개선된 품질을 갖는 실리콘 산화물 막을 증착하기 위한 방법
KR20210029090A (ko) 2019-09-04 2021-03-15 에이에스엠 아이피 홀딩 비.브이. 희생 캡핑 층을 이용한 선택적 증착 방법
KR20210029663A (ko) 2019-09-05 2021-03-16 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치
US11562901B2 (en) 2019-09-25 2023-01-24 Asm Ip Holding B.V. Substrate processing method
CN112593212B (zh) 2019-10-02 2023-12-22 Asm Ip私人控股有限公司 通过循环等离子体增强沉积工艺形成拓扑选择性氧化硅膜的方法
CN112635282A (zh) 2019-10-08 2021-04-09 Asm Ip私人控股有限公司 具有连接板的基板处理装置、基板处理方法
KR20210042810A (ko) 2019-10-08 2021-04-20 에이에스엠 아이피 홀딩 비.브이. 활성 종을 이용하기 위한 가스 분배 어셈블리를 포함한 반응기 시스템 및 이를 사용하는 방법
KR20210043460A (ko) 2019-10-10 2021-04-21 에이에스엠 아이피 홀딩 비.브이. 포토레지스트 하부층을 형성하기 위한 방법 및 이를 포함한 구조체
US12009241B2 (en) 2019-10-14 2024-06-11 Asm Ip Holding B.V. Vertical batch furnace assembly with detector to detect cassette
TWI834919B (zh) 2019-10-16 2024-03-11 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 氧化矽之拓撲選擇性膜形成之方法
US11637014B2 (en) 2019-10-17 2023-04-25 Asm Ip Holding B.V. Methods for selective deposition of doped semiconductor material
KR20210047808A (ko) 2019-10-21 2021-04-30 에이에스엠 아이피 홀딩 비.브이. 막을 선택적으로 에칭하기 위한 장치 및 방법
KR20210050453A (ko) 2019-10-25 2021-05-07 에이에스엠 아이피 홀딩 비.브이. 기판 표면 상의 갭 피처를 충진하는 방법 및 이와 관련된 반도체 소자 구조
US11646205B2 (en) 2019-10-29 2023-05-09 Asm Ip Holding B.V. Methods of selectively forming n-type doped material on a surface, systems for selectively forming n-type doped material, and structures formed using same
KR20210054983A (ko) 2019-11-05 2021-05-14 에이에스엠 아이피 홀딩 비.브이. 도핑된 반도체 층을 갖는 구조체 및 이를 형성하기 위한 방법 및 시스템
US11501968B2 (en) 2019-11-15 2022-11-15 Asm Ip Holding B.V. Method for providing a semiconductor device with silicon filled gaps
KR20210062561A (ko) 2019-11-20 2021-05-31 에이에스엠 아이피 홀딩 비.브이. 기판의 표면 상에 탄소 함유 물질을 증착하는 방법, 상기 방법을 사용하여 형성된 구조물, 및 상기 구조물을 형성하기 위한 시스템
US11450529B2 (en) 2019-11-26 2022-09-20 Asm Ip Holding B.V. Methods for selectively forming a target film on a substrate comprising a first dielectric surface and a second metallic surface
CN112951697A (zh) 2019-11-26 2021-06-11 Asm Ip私人控股有限公司 基板处理设备
CN112885693A (zh) 2019-11-29 2021-06-01 Asm Ip私人控股有限公司 基板处理设备
CN112885692A (zh) 2019-11-29 2021-06-01 Asm Ip私人控股有限公司 基板处理设备
JP2021090042A (ja) 2019-12-02 2021-06-10 エーエスエム アイピー ホールディング ビー．ブイ． 基板処理装置、基板処理方法
KR20210070898A (ko) 2019-12-04 2021-06-15 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치
US11885013B2 (en) 2019-12-17 2024-01-30 Asm Ip Holding B.V. Method of forming vanadium nitride layer and structure including the vanadium nitride layer
KR20210080214A (ko) 2019-12-19 2021-06-30 에이에스엠 아이피 홀딩 비.브이. 기판 상의 갭 피처를 충진하는 방법 및 이와 관련된 반도체 소자 구조
TW202140135A (zh) 2020-01-06 2021-11-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 氣體供應總成以及閥板總成
US11993847B2 (en) 2020-01-08 2024-05-28 Asm Ip Holding B.V. Injector
US11624111B2 (en) 2020-01-16 2023-04-11 Entegris, Inc. Method for etching or deposition
TW202129068A (zh) 2020-01-20 2021-08-01 荷蘭商Ａｓｍ Ｉｐ控股公司 形成薄膜之方法及修飾薄膜表面之方法
JP7117336B2 (ja) 2020-01-30 2022-08-12 株式会社Kokusai Electric 半導体装置の製造方法、プログラム及び基板処理装置
TW202130846A (zh) 2020-02-03 2021-08-16 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 形成包括釩或銦層的結構之方法
TW202146882A (zh) 2020-02-04 2021-12-16 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 驗證一物品之方法、用於驗證一物品之設備、及用於驗證一反應室之系統
US11776846B2 (en) 2020-02-07 2023-10-03 Asm Ip Holding B.V. Methods for depositing gap filling fluids and related systems and devices
TW202146715A (zh) 2020-02-17 2021-12-16 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 用於生長磷摻雜矽層之方法及其系統
TW202203344A (zh) 2020-02-28 2022-01-16 荷蘭商Ａｓｍ Ｉｐ控股公司 專用於零件清潔的系統
US11821080B2 (en) 2020-03-05 2023-11-21 L'air Liquide Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude Reagents to remove oxygen from metal oxyhalide precursors in thin film deposition processes
KR20210116249A (ko) 2020-03-11 2021-09-27 에이에스엠 아이피 홀딩 비.브이. 록아웃 태그아웃 어셈블리 및 시스템 그리고 이의 사용 방법
KR20210116240A (ko) 2020-03-11 2021-09-27 에이에스엠 아이피 홀딩 비.브이. 조절성 접합부를 갖는 기판 핸들링 장치
CN113394086A (zh) 2020-03-12 2021-09-14 Asm Ip私人控股有限公司 用于制造具有目标拓扑轮廓的层结构的方法
KR20210119809A (ko) 2020-03-25 2021-10-06 삼성전자주식회사 몰리브덴 화합물과 이를 이용한 집적회로 소자의 제조 방법
JP2021167466A (ja) * 2020-03-30 2021-10-21 アプライド マテリアルズ インコーポレイテッドApplied Materials, Incorporated バリア層のないインシトゥタングステン堆積
KR20210124042A (ko) 2020-04-02 2021-10-14 에이에스엠 아이피 홀딩 비.브이. 박막 형성 방법
TW202146689A (zh) 2020-04-03 2021-12-16 荷蘭商Ａｓｍ Ｉｐ控股公司 阻障層形成方法及半導體裝置的製造方法
TW202145344A (zh) 2020-04-08 2021-12-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 用於選擇性蝕刻氧化矽膜之設備及方法
US11821078B2 (en) 2020-04-15 2023-11-21 Asm Ip Holding B.V. Method for forming precoat film and method for forming silicon-containing film
US11996289B2 (en) 2020-04-16 2024-05-28 Asm Ip Holding B.V. Methods of forming structures including silicon germanium and silicon layers, devices formed using the methods, and systems for performing the methods
TW202146831A (zh) 2020-04-24 2021-12-16 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 垂直批式熔爐總成、及用於冷卻垂直批式熔爐之方法
TW202140831A (zh) 2020-04-24 2021-11-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 形成含氮化釩層及包含該層的結構之方法
KR20210132600A (ko) 2020-04-24 2021-11-04 에이에스엠 아이피 홀딩 비.브이. 바나듐, 질소 및 추가 원소를 포함한 층을 증착하기 위한 방법 및 시스템
KR20210134226A (ko) 2020-04-29 2021-11-09 에이에스엠 아이피 홀딩 비.브이. 고체 소스 전구체 용기
KR20210134869A (ko) 2020-05-01 2021-11-11 에이에스엠 아이피 홀딩 비.브이. Foup 핸들러를 이용한 foup의 빠른 교환
KR20210141379A (ko) 2020-05-13 2021-11-23 에이에스엠 아이피 홀딩 비.브이. 반응기 시스템용 레이저 정렬 고정구
KR20210143653A (ko) 2020-05-19 2021-11-29 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치
KR20210145078A (ko) 2020-05-21 2021-12-01 에이에스엠 아이피 홀딩 비.브이. 다수의 탄소 층을 포함한 구조체 및 이를 형성하고 사용하는 방법
KR20210145080A (ko) 2020-05-22 2021-12-01 에이에스엠 아이피 홀딩 비.브이. 과산화수소를 사용하여 박막을 증착하기 위한 장치
WO2021239596A1 (en) * 2020-05-26 2021-12-02 Merck Patent Gmbh Methods of forming molybdenum-containing films deposited on elemental metal films
TW202201602A (zh) 2020-05-29 2022-01-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 基板處理方法
TW202218133A (zh) 2020-06-24 2022-05-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 形成含矽層之方法
TW202217953A (zh) 2020-06-30 2022-05-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 基板處理方法
KR20220006455A (ko) 2020-07-08 2022-01-17 에이에스엠 아이피 홀딩 비.브이. 기판 처리 방법
KR20220010438A (ko) 2020-07-17 2022-01-25 에이에스엠 아이피 홀딩 비.브이. 포토리소그래피에 사용하기 위한 구조체 및 방법
TW202204662A (zh) 2020-07-20 2022-02-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 用於沉積鉬層之方法及系統
US11725280B2 (en) 2020-08-26 2023-08-15 Asm Ip Holding B.V. Method for forming metal silicon oxide and metal silicon oxynitride layers
USD990534S1 (en) 2020-09-11 2023-06-27 Asm Ip Holding B.V. Weighted lift pin
USD1012873S1 (en) 2020-09-24 2024-01-30 Asm Ip Holding B.V. Electrode for semiconductor processing apparatus
US12009224B2 (en) 2020-09-29 2024-06-11 Asm Ip Holding B.V. Apparatus and method for etching metal nitrides
TW202229613A (zh) 2020-10-14 2022-08-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 於階梯式結構上沉積材料的方法
TW202217037A (zh) 2020-10-22 2022-05-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 沉積釩金屬的方法、結構、裝置及沉積總成
TW202223136A (zh) 2020-10-28 2022-06-16 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 用於在基板上形成層之方法、及半導體處理系統
KR20220076343A (ko) 2020-11-30 2022-06-08 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치의 반응 챔버 내에 배열되도록 구성된 인젝터
US11946137B2 (en) 2020-12-16 2024-04-02 Asm Ip Holding B.V. Runout and wobble measurement fixtures
TW202231903A (zh) 2020-12-22 2022-08-16 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 過渡金屬沉積方法、過渡金屬層、用於沉積過渡金屬於基板上的沉積總成
US11869806B2 (en) * 2021-05-07 2024-01-09 Applied Materials, Inc. Methods of forming molybdenum contacts
USD981973S1 (en) 2021-05-11 2023-03-28 Asm Ip Holding B.V. Reactor wall for substrate processing apparatus
USD1023959S1 (en) 2021-05-11 2024-04-23 Asm Ip Holding B.V. Electrode for substrate processing apparatus
USD980813S1 (en) 2021-05-11 2023-03-14 Asm Ip Holding B.V. Gas flow control plate for substrate processing apparatus
USD980814S1 (en) 2021-05-11 2023-03-14 Asm Ip Holding B.V. Gas distributor for substrate processing apparatus
US20220403505A1 (en) * 2021-06-16 2022-12-22 Applied Materials, Inc. Methods and apparatus for processing a substrate
USD990441S1 (en) 2021-09-07 2023-06-27 Asm Ip Holding B.V. Gas flow control plate
WO2023215135A1 (en) * 2022-05-05 2023-11-09 Lam Research Corporation Molybdenum halides in memory applications

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0241190A2 (en) * 1986-04-09 1987-10-14 Massachusetts Institute Of Technology Method and apparatus for photodeposition of films on surfaces
JPS62290874A (ja) * 1986-04-09 1987-12-17 マサチユ−セツツ・インステチユ−ト・オブ・テクノロジ− 表面被膜の光蒸着方法とその装置
JP2000119045A (ja) * 1998-10-13 2000-04-25 Glaverbel Sa 太陽光制御被覆ガラス
US6284366B1 (en) * 1998-06-08 2001-09-04 Widia Gmbh Cutting tool and method of making same
EP1323845A1 (fr) * 2001-12-31 2003-07-02 Memscap Structure multicouche
CN101308794B (zh) * 2007-05-15 2010-09-15 应用材料股份有限公司 钨材料的原子层沉积
US20150262828A1 (en) * 2014-03-14 2015-09-17 Applied Materials, Inc. MULTI-THRESHOLD VOLTAGE (Vt) WORKFUNCTION METAL BY SELECTIVE ATOMIC LAYER DEPOSITION (ALD)
CN105097446A (zh) * 2014-05-09 2015-11-25 朗姆研究公司 使用氯化钨前体制备钨和氮化钨薄膜的方法

Family Cites Families (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB806696A (en) 1954-12-08 1958-12-31 John Simon Nachtman Method of producing refractory fibre laminate
GB877408A (en) 1956-08-23 1961-09-13 British Aluminium Co Ltd Improvements in or relating to dies
US3437515A (en) 1965-01-11 1969-04-08 Mearl Corp Method of coating surfaces with high index oxides
US3614829A (en) 1969-12-08 1971-10-26 Gen Electric Method of forming high stability self-registered field effect transistors
US3996489A (en) 1972-09-29 1976-12-07 Owens-Illinois, Inc. Gas discharge device including transition metal element on internal dielectric layer
EP0878711A1 (en) 1997-05-15 1998-11-18 Interuniversitair Micro-Elektronica Centrum Vzw Chemically sensitive sensor comprising arylene alkenylene oligomers
FR2834387B1 (fr) * 2001-12-31 2004-02-27 Memscap Composant electronique incorporant un circuit integre et un micro-condensateur
JP2005144432A (ja) 2003-11-18 2005-06-09 Rohm & Haas Co アルカンをアルケン、およびそれらの対応する酸素化生成物に転化するための触媒系
BRPI0500615B1 (pt) 2004-03-10 2015-07-14 Rohm & Haas Catalisador modificado, e, sistema de catalisador modificado
ITMI20040554A1 (it) 2004-03-23 2004-06-23 Polimeri Europa Spa Procedimento per la idrodealchilazione catalitica selettiva di idrocarburi alchilaromatici
EP1598110A1 (en) 2004-04-22 2005-11-23 Rohm and Haas Company Structured oxidation catalysts
TWI314876B (en) 2004-11-18 2009-09-21 Rohm And Haas Compan Multi-staged catalyst systems and process for converting alkanes to alkenes and to their corresponding oxygenated products
TWI332418B (en) 2004-11-18 2010-11-01 Rohm & Haas Hybrid catalyst systems and hybrid process for converting alkanes to alkenes and to their corresponding oxygenated products
US7361622B2 (en) 2005-11-08 2008-04-22 Rohm And Haas Company Multi-staged catalyst systems and process for converting alkanes to alkenes and to their corresponding oxygenated products
US20060122055A1 (en) 2004-12-06 2006-06-08 Gaffney Anne M (Amm)oxidation catalyst and catalytic (amm)oxidation process for conversion of lower alkanes
CN101184690B (zh) 2005-04-07 2013-03-20 耶达研究与开发有限公司 制备无机富勒烯类纳米粒子的方法和装置
US20070106088A1 (en) 2005-11-08 2007-05-10 Abraham Benderly Hybrid catalyst systems and hybrid process for converting alkanes to alkenes and to their corresponding oxygenated products
ITMI20061548A1 (it) 2006-08-03 2008-02-04 Polimeri Europa Spa Composizioni catalitiche per idrodealchilazioni altamente selettive di idrocarburi alchilaromatici
US7795469B2 (en) 2006-12-21 2010-09-14 Rohm And Haas Company Process for the selective (AMM) oxidation of lower molecular weight alkanes and alkenes
WO2009042713A1 (en) 2007-09-28 2009-04-02 Applied Materials, Inc. Vapor deposition of tungsten materials
JP5730670B2 (ja) * 2011-05-27 2015-06-10 株式会社Adeka 酸化モリブデンを含有する薄膜の製造方法、及び酸化モリブデンを含有する薄膜の形成用原料
US9283551B2 (en) 2013-01-23 2016-03-15 Mississippi State University Research And Technology Corporation Catalysts for converting syngas into liquid hydrocarbons and methods thereof
TWI732846B (zh) * 2016-04-25 2021-07-11 美商應用材料股份有限公司 透過控制前驅物混合來強化金屬的空間ald
US10453744B2 (en) * 2016-11-23 2019-10-22 Entegris, Inc. Low temperature molybdenum film deposition utilizing boron nucleation layers

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0241190A2 (en) * 1986-04-09 1987-10-14 Massachusetts Institute Of Technology Method and apparatus for photodeposition of films on surfaces
JPS62290874A (ja) * 1986-04-09 1987-12-17 マサチユ−セツツ・インステチユ−ト・オブ・テクノロジ− 表面被膜の光蒸着方法とその装置
US6284366B1 (en) * 1998-06-08 2001-09-04 Widia Gmbh Cutting tool and method of making same
JP2000119045A (ja) * 1998-10-13 2000-04-25 Glaverbel Sa 太陽光制御被覆ガラス
US6416890B1 (en) * 1998-10-13 2002-07-09 Glaverbel Solar control coated glass
EP1323845A1 (fr) * 2001-12-31 2003-07-02 Memscap Structure multicouche
CN101308794B (zh) * 2007-05-15 2010-09-15 应用材料股份有限公司 钨材料的原子层沉积
US20150262828A1 (en) * 2014-03-14 2015-09-17 Applied Materials, Inc. MULTI-THRESHOLD VOLTAGE (Vt) WORKFUNCTION METAL BY SELECTIVE ATOMIC LAYER DEPOSITION (ALD)
CN105097446A (zh) * 2014-05-09 2015-11-25 朗姆研究公司 使用氯化钨前体制备钨和氮化钨薄膜的方法

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
KAPLAN L H ET AL: "The Deposition of Molybdenum and Tungsten Films", 《JOURNAL OF THE ELECTROCHEMICAL SOC》 *

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110731003A (zh) * 2017-04-10 2020-01-24 朗姆研究公司 含钼的低电阻率的膜
CN110731003B (zh) * 2017-04-10 2024-03-26 朗姆研究公司 含钼的低电阻率的膜
CN113195783A (zh) * 2018-12-19 2021-07-30 恩特格里斯公司 在还原共反应剂存在下沉积钨或钼层的方法
US11970776B2 (en) 2019-01-28 2024-04-30 Lam Research Corporation Atomic layer deposition of metal films
US11821071B2 (en) 2019-03-11 2023-11-21 Lam Research Corporation Precursors for deposition of molybdenum-containing films
CN114599624A (zh) * 2019-10-21 2022-06-07 万腾荣公司 具有改善的堆积密度的氯氧化钼
CN111514881A (zh) * 2020-05-15 2020-08-11 山西大学 一种硼氧化钼纳米多孔薄膜电催化剂及其制备方法和应用

Also Published As

Publication number Publication date
KR20190028743A (ko) 2019-03-19
KR102266610B1 (ko) 2021-06-21
WO2018013778A1 (en) 2018-01-18
US11107675B2 (en) 2021-08-31
TW201812070A (zh) 2018-04-01
US20180019165A1 (en) 2018-01-18
US20180286668A1 (en) 2018-10-04
TWI648421B (zh) 2019-01-21
WO2018013778A8 (en) 2018-08-30
CN109661481B (zh) 2021-11-30
JP2019527302A (ja) 2019-09-26
JP6793243B2 (ja) 2020-12-02

Similar Documents

Publication Publication Date Title
CN109661481A (zh) 使用MoOC14的CVD Mo沉积
JP6116849B2 (ja) 金属／金属窒化物基板上に貴金属を選択的に堆積させるための方法
JP7203111B2 (ja) ビス（アルキル－アレーン）モリブデン前駆体を使用したモリブデンの蒸着
TWI641716B (zh) 形成保形碳膜之方法、包含保形碳膜之結構與裝置及形成其之系統
CN102146553B (zh) 沉积含金属膜于具有图案化构造的基板上的方法
Choi et al. Thermal atomic layer deposition (ALD) of Ru films for Cu direct plating
TW201809333A (zh) 相對於基板的第二表面選擇性沈積在基板的第一表面上的製程與方法
US20200131628A1 (en) Method for forming molybdenum films on a substrate
CN110265295A (zh) 含氟导电膜
Caubet et al. Low-temperature low-resistivity PEALD TiN using TDMAT under hydrogen reducing ambient
JP2005064302A5 (zh)
JP2021516447A (ja) 金属カルコゲナイドピラーを形成する方法
Kim et al. Characteristics and compositional variation of TiN films deposited by remote PEALD on contact holes
Musschoot et al. Texture of atomic layer deposited ruthenium
TWI833823B (zh) 無襯墊連續非晶形金屬膜
TWI270151B (en) Method for fabricating semiconductor device having diffusion barrier layer
JP4363383B2 (ja) 有機金属化学気相成長法用原料液及び該原料液を用いたＨｆ−Ｓｉ含有複合酸化物膜の製造方法
JP2020505511A (ja) 金を含む薄膜の蒸着
EP3054031B1 (en) METHOD FOR PRODUCING NICKEL THIN FILM ON Si SUBSTRATE BY CHEMICAL VAPOR DEPOSITION METHOD, AND METHOD FOR PRODUCING Ni SILICIDE THIN FILM ON Si SUBSTRATE
CN110777351B (zh) 钨沉积方法
US6812144B2 (en) Method for forming metal wiring in a semiconductor device
JP2003017437A (ja) 銅材料充填プラグ及び銅材料充填プラグの製造方法
JP6797068B2 (ja) 原子層堆積法による炭化チタン含有薄膜の製造方法
KR20180058123A (ko) 텅스텐 박막 증착 방법
CN106605302A (zh) 碳化硅外延晶片及其制造方法

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant