KR100938534B1 - 반도체 장치의 제조 방법 및 기판 처리 장치 - Google Patents
반도체 장치의 제조 방법 및 기판 처리 장치 Download PDFInfo
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- KR100938534B1 KR100938534B1 KR1020077017727A KR20077017727A KR100938534B1 KR 100938534 B1 KR100938534 B1 KR 100938534B1 KR 1020077017727 A KR1020077017727 A KR 1020077017727A KR 20077017727 A KR20077017727 A KR 20077017727A KR 100938534 B1 KR100938534 B1 KR 100938534B1
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- H—ELECTRICITY
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
- C23C16/463—Cooling of the substrate
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- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
- C23C16/4408—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber by purging residual gases from the reaction chamber or gas lines
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4411—Cooling of the reaction chamber walls
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y10S414/00—Material or article handling
- Y10S414/135—Associated with semiconductor wafer handling
- Y10S414/137—Associated with semiconductor wafer handling including means for charging or discharging wafer cassette
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S414/00—Material or article handling
- Y10S414/135—Associated with semiconductor wafer handling
- Y10S414/139—Associated with semiconductor wafer handling including wafer charging or discharging means for vacuum chamber
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/905—Cleaning of reaction chamber
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Abstract
Description
Claims (30)
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- 기판을 반응로 내에 로드하는 공정과,상기 반응로 내에서 상기 기판에 성막을 행하는 공정과,성막 후의 상기 기판을 상기 반응로로부터 언로드하는 공정과,상기 기판을 언로드한 후, 상기 반응로 내에 상기 기판이 없는 상태에서, 상기 반응로를 덮어서 설치된 단열 커버와 상기 반응로 사이의 공간에 냉각매체를 흘려서 상기 반응로 내를 강제 냉각하는 공정을 갖는 것을 특징으로 하는 반도체 장치의 제조 방법.
- 기판을 반응로 내에 로드하는 공정과,상기 반응로 내에서 상기 기판에 성막을 행하는 공정과,성막 후의 상기 기판을 상기 반응로로부터 언로드하는 공정과,상기 기판을 언로드한 후, 상기 반응로 내에 상기 기판이 없는 상태에서, 상기 반응로를 덮어서 설치된 단열 커버와 상기 반응로 사이의 공간에 냉각매체를 흘려서 상기 반응로 내를 강제 냉각하면서, 상기 반응로 내부에 퍼지 가스를 흘려서 상기 반응로 내를 가스 퍼지하는 공정을 갖는 것을 특징으로 하는 반도체 장치의 제조 방법.
- 기판을 반응로 내에 로드하는 공정과,상기 반응로 내에서 상기 기판에 성막을 행하는 공정과,성막 후의 상기 기판을 상기 반응로로부터 언로드하는 공정과,상기 기판을 언로드한 후, 상기 반응로 내에 상기 기판이 없는 상태에서, 상기 반응로를 덮어서 설치된 단열 커버와 상기 반응로 사이의 공간에 냉각매체를 흘려서 상기 반응로 내를 강제 냉각하면서, 상기 반응로 내부에 퍼지 가스를 흘려서 상기 반응로 내를 대기압 상태에서 가스 퍼지하는 공정을 갖는 것을 특징으로 하는 반도체 장치의 제조 방법.
- 기판을 반응로 내에 로드하는 공정과,상기 반응로 내에서 상기 기판에 성막을 행하는 공정과,성막 후의 상기 기판을 상기 반응로로부터 언로드하는 공정과,상기 기판을 언로드한 후, 상기 반응로 내에 상기 기판이 없는 상태에서, 상기 반응로 내의 온도를 일단 성막 온도보다도 높은 온도까지 상승시키고 나서, 상기 반응로를 덮어서 설치된 단열 커버와 상기 반응로 사이의 공간에 냉각매체를 흘려서 상기 반응로 내를 강제 냉각하면서, 상기 반응로 내부에 퍼지 가스를 흘려서 상기 반응로 내를 가스 퍼지하는 공정을 갖는 것을 특징으로 하는 반도체 장치의 제조 방법.
- 기판에 대하여 성막을 행하는 반응로와,상기 반응로 내에 성막 가스를 공급하는 성막 가스 공급 라인과,상기 반응로 내에 퍼지 가스를 공급하는 퍼지 가스 공급 라인과,상기 반응로 내를 배기하는 배기 라인과,상기 반응로 내에 대해 상기 기판을 로드/언로드하는 반송 수단과,상기 반응로를 덮어서 설치된 단열 커버와 상기 반응로 사이의 공간에 냉각매체를 흘려서 상기 반응로 내를 강제 냉각하는 강제 냉각 기구와,상기 반응로로부터 상기 기판을 언로드시킨 후, 상기 반응로 내에 상기 기판이 없는 상태에서, 상기 단열 커버와 상기 반응로 사이의 공간에 냉각매체를 흘려서 상기 반응로 내를 강제 냉각하도록 상기 강제 냉각 기구를 제어하는 제어 수단을 갖는 것을 특징으로 하는 기판 처리 장치.
- 기판에 대하여 성막을 행하는 반응로와,상기 반응로 내에 성막 가스를 공급하는 성막 가스 공급 라인과,상기 반응로 내에 퍼지 가스를 공급하는 퍼지 가스 공급 라인과,상기 반응로 내를 배기하는 배기 라인과,상기 반응로 내에 대해 상기 기판을 로드/언로드하는 반송 수단과,상기 반응로를 덮어서 설치된 단열 커버와 상기 반응로 사이의 공간에 냉각매체를 흘려서 상기 반응로 내를 강제 냉각하는 강제 냉각 기구와,상기 반응로로부터 상기 기판을 언로드시킨 후, 상기 반응로 내에 상기 기판이 없는 상태에서, 상기 단열 커버와 상기 반응로 사이의 공간에 냉각매체를 흘려서 상기 반응로 내를 강제 냉각시키면서, 상기 반응로 내부에 퍼지 가스를 흘려서 상기 반응로 내를 가스 퍼지하도록 상기 각 부의 동작을 제어하는 제어 수단을 갖는 것을 특징으로 하는 기판 처리 장치.
- 기판에 대하여 성막을 행하는 반응로와,상기 반응로 내에 성막 가스를 공급하는 성막 가스 공급 라인과,상기 반응로 내에 퍼지 가스를 공급하는 퍼지 가스 공급 라인과,상기 반응로 내를 배기하는 배기 라인과,상기 반응로 내에 대해 상기 기판을 로드/언로드하는 반송 수단과,상기 반응로를 덮어서 설치된 단열 커버와 상기 반응로 사이의 공간에 냉각매체를 흘려서 상기 반응로 내를 강제 냉각하는 강제 냉각 기구와,상기 반응로로부터 상기 기판을 언로드시킨 후, 상기 반응로 내에 상기 기판이 없는 상태에서, 상기 단열 커버와 상기 반응로 사이의 공간에 냉각매체를 흘려서 상기 반응로 내를 강제 냉각하면서, 상기 반응로 내부에 퍼지 가스를 흘려서 상기 반응로 내를 대기압 상태에서 가스 퍼지하도록 상기 각 부의 동작을 제어하는 제어 수단을 갖는 것을 특징으로 하는 기판 처리 장치.
- 기판에 대하여 성막을 행하는 반응로와,상기 반응로 내에 성막 가스를 공급하는 성막 가스 공급 라인과,상기 반응로 내에 퍼지 가스를 공급하는 퍼지 가스 공급 라인과,상기 반응로 내를 배기하는 배기 라인과,상기 반응로 내에 대해 상기 기판을 로드/언로드하는 반송 수단과,상기 반응로를 덮어서 설치된 단열 커버와 상기 반응로 사이의 공간에 냉각매체를 흘려서 상기 반응로 내를 강제 냉각하는 강제 냉각 기구와,상기 반응로로부터 상기 기판을 언로드시킨 후, 상기 반응로 내에 상기 기판이 없는 상태에서, 상기 반응로 내의 온도를 일단 성막 온도보다도 높은 온도까지 상승시키고 나서, 상기 단열 커버와 상기 반응로 사이의 공간에 냉각매체를 흘려서 상기 반응로 내를 강제 냉각하면서, 상기 반응로 내부에 퍼지 가스를 흘려서 상기 반응로 내를 가스 퍼지하도록 상기 각 부의 동작을 제어하는 제어 수단을 갖는 것을 특징으로 하는 기판 처리 장치.
- 청구항 17 내지 20 중 어느 한 항에 있어서,상기 반응로 내를 강제 냉각하는 공정에서는, 상기 단열 커버와 상기 반응로 사이의 공간의 고온의 분위기 가스를 배기하면서, 상기 단열 커버와 상기 반응로 사이의 공간에 냉각매체를 흘리는 것을 특징으로 하는 반도체 장치의 제조 방법.
- 청구항 17 내지 20 중 어느 한 항에 있어서,상기 반응로 내를 강제 냉각하는 공정에서는, 상기 단열 커버와 상기 반응로 사이의 공간에 냉각 매체로서 공기 또는 N2를 흘리는 것을 특징으로 하는 반도체 장치의 제조 방법.
- 청구항 17 내지 20 중 어느 한 항에 있어서,상기 반응로 내를 강제 냉각하는 공정에서는, 상기 단열 커버와 상기 반응로 사이의 공간에 냉각 매체를 흘려서 상기 반응로 내를 강제 냉각함으로써 상기 반응로 내에 형성된 퇴적막에 강제적으로 균열을 발생시키고, 그 때, 상기 반응로 내부를 가스 퍼지하여 상기 균열 발생 시에 생기는 파티클을 상기 반응로 밖으로 배출하는 것을 특징으로 하는 반도체 장치의 제조 방법.
- 청구항 21 내지 24 중 어느 한 항에 있어서,상기 강제 냉각 기구는, 상기 단열 커버와 상기 반응로 사이의 공간에 연통하고, 이 공간에 냉각 매체를 공급하는 공급 라인과, 이 공간을 배기하는 배기 라인을 갖는 것을 특징으로 하는 기판 처리 장치.
- 청구항 21 내지 24 중 어느 한 항에 있어서,상기 공급 라인에는 도입 블로어가 설치되어 있고, 상기 배기 라인에는 배기 블로어가 설치되어 있는 것을 특징으로 하는 기판 처리 장치.
- 기판을 반응로 내에 로드하는 공정과,상기 반응로 내에서 상기 기판에 성막을 행하는 공정과,성막 후의 상기 기판을 상기 반응로로부터 언로드하는 공정과,상기 기판을 언로드한 후, 상기 반응로 내에 상기 기판이 없는 상태에서, 상기 반응로를 덮어서 설치된 단열 커버와 상기 반응로 사이의 공간에 냉각매체를 흘려서 상기 반응로 내를 강제 냉각하면서, 상기 반응로 내부에 퍼지 가스를 흘려서 상기 반응로 내를 가스 퍼지하는 공정과,상기 각 공정을 반복하여 행한 뒤, 상기 반응로 내를 가스 세정하는 공정을 갖는 것을 특징으로 하는 반도체 장치의 제조 방법.
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JP5452043B2 (ja) | 2014-03-26 |
US8636882B2 (en) | 2014-01-28 |
KR20070091229A (ko) | 2007-09-07 |
TW201145390A (en) | 2011-12-16 |
TW200514162A (en) | 2005-04-16 |
CN1823404B (zh) | 2012-08-29 |
TWI360179B (en) | 2012-03-11 |
JP2010109387A (ja) | 2010-05-13 |
US20070259532A1 (en) | 2007-11-08 |
CN101914760B (zh) | 2012-08-29 |
TWI449104B (zh) | 2014-08-11 |
JPWO2005029566A1 (ja) | 2007-11-15 |
CN101429649B (zh) | 2012-06-13 |
KR20090055650A (ko) | 2009-06-02 |
CN1823404A (zh) | 2006-08-23 |
CN101429649A (zh) | 2009-05-13 |
TW201310530A (zh) | 2013-03-01 |
JP5190077B2 (ja) | 2013-04-24 |
KR100943588B1 (ko) | 2010-02-23 |
US8231731B2 (en) | 2012-07-31 |
KR20060066168A (ko) | 2006-06-15 |
US7955991B2 (en) | 2011-06-07 |
US20110239936A1 (en) | 2011-10-06 |
TWI389204B (zh) | 2013-03-11 |
JP5199286B2 (ja) | 2013-05-15 |
CN101914760A (zh) | 2010-12-15 |
JP2010098331A (ja) | 2010-04-30 |
KR100765681B1 (ko) | 2007-10-12 |
WO2005029566A1 (ja) | 2005-03-31 |
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